Multifunctional anode structure of micro display and preparation process thereof

Abstract

The application discloses a multifunctional anode structure of a micro display, and the anode comprises an R-pixel anode, a G-pixel anode and a B-pixel anode, wherein the R-pixel anode, the G-pixel anode and the B-pixel anode each comprise a bonding layer, a reflection layer, a diffusion barrier layer and a work function adjusting layer 4, the bonding layer, the reflection layer, the diffusion barrier layer and the work function adjusting layer are sequentially arranged from bottom to top, the thicknesses of the reflection layers in the three pixel anodes are different, the materials used in the three pixel anodes are different, the thicknesses of the work function adjusting layers in the three pixel anodes are different, and the materials used in the three pixel anodes are different. The independent control of driving voltage, reflectivity and micro-cavity effect of RGB three pixels can be realized, the different spectral requirements of RGB pixels are matched, and then the efficiency is improved, the color gamut is improved, and the problems of the current RGB pixel light emission that cannot be adjusted, low efficiency and low color gamut are solved. The application discloses a preparation process of the multifunctional anode structure of the micro display.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of micro display, and particularly relates to a multifunctional anode structure of a micro display and a preparation process thereof. BACKGROUND

[0002] With the development of the near-eye display market such as virtual reality (VR), augmented reality (AR) and mixed reality (MR), micro display technology is also developing, including Micro OLED, Micro LED, high-resolution LCD, liquid crystal on silicon (LCOS) and digital light processing (DLP). Compared with other micro display technologies, the silicon-based organic light-emitting diode micro display (Micro OLED) has great competitiveness in the near-eye display field due to its high resolution, high color gamut, high contrast, high refresh rate, low power consumption, low heat generation, simple structure, small size, good portability and other advantages. At present, Micro OLED mainly uses open mask evaporation white OLED, and then uses a color filter (CF) colorization scheme due to the limitation of evaporation mask and process.

[0003] The white light + CF scheme, if the anode uses the same material or structure, the emission spectrum of the RGB three pixels is the same, as shown in FIG. 1, the microcavity effect of the three pixels is also the same, the spectra of the three pixels cannot be independently adjusted, and the light of two other colors has to be filtered out, the light utilization efficiency is poor, and the color gamut is low. The WOLED RGB three pixels use the same material, and cannot distinguish RGB, and cannot realize independent control of RGB. Figure 3 SUMMARY

[0004] In view of the deficiencies in the prior art, the purpose of the present application is to provide a multifunctional anode structure of a micro display and a preparation process thereof. The anode reflective layer and the work function layer of the RGB pixels use different materials and thicknesses to adjust the reflectivity, work function and microcavity effect of different pixels, prepare an anode with the functions of independent adjustment of driving voltage, reflectivity and microcavity effect, realize independent control of the driving voltage, reflectivity and microcavity effect of the RGB three pixels, match the different spectral requirements of the RGB pixels, enhance red light for R pixels, reduce blue light and green light; enhance green light for G pixels, reduce blue light and red light; enhance blue light for B pixels, reduce red light and green light; and further improve the efficiency and improve the color gamut.

[0005] ​In order to achieve the above object, the technical scheme of the present application is as follows: a multifunctional anode structure of a micro display, the anode comprising an R-pixel anode, a G-pixel anode and a B-pixel anode, each of the R-pixel anode, the G-pixel anode and the B-pixel anode comprising a bonding layer, a reflection layer, a diffusion barrier layer and a work function adjusting layer, the bonding layer, the reflection layer, the diffusion barrier layer and the work function adjusting layer being arranged in sequence from bottom to top, the thickness and the material of the reflection layer being different in the three pixel anodes, the thickness and the material of the work function adjusting layer being different in the three pixel anodes.

[0006] Further, the thickness of the reflection layer in the R-pixel anode is 500-5000A, the thickness of the reflection layer in the G-pixel anode is 500-2000A, and the thickness of the reflection layer in the B-pixel anode is 500-2000A.

[0007] Further, the material of the reflection layer in the R-pixel anode is Au, the material of the reflection layer in the G-pixel anode is Al or Ag, and the material of the reflection layer in the B-pixel anode is Al or Ag.

[0008] Further, the thickness of the work function adjusting layer in the R-pixel anode is 500-5000A, the thickness of the work function adjusting layer in the G-pixel anode is 200-3000A, and the thickness of the work function adjusting layer in the B-pixel anode is 100-2000A.

[0009] Further, the material of the work function adjusting layer in the R-pixel anode is ITO or IGZO or IZO, the material of the work function adjusting layer in the G-pixel anode is ITO or IGZO or IZO, and the material of the work function adjusting layer in the B-pixel anode is AZO or GZO or GaInSnO.

[0010] Further, the thickness of the bonding layer in the R-pixel anode, the G-pixel anode and the B-pixel anode is 10-1000A, and the material of the bonding layer in the three pixel anodes is Ti or Ta or TiN or TaN; the thickness of the diffusion barrier layer in the R-pixel anode, the G-pixel anode and the B-pixel anode is 10-200A, and the material of the diffusion barrier layer in the three pixel anodes is Ti or Ta or TiN or TaN.

[0011] Based on the above-mentioned multifunctional anode structure of micro display, the application further relates to a preparation process of the multifunctional anode structure of micro display, which comprises the following steps: step a: preparing a driving circuit wafer; step b: preparing an R-pixel anode; step c: preparing a G-pixel anode; and step d: preparing a B-pixel anode; the R-pixel anode, the G-pixel anode and the B-pixel anode are independently prepared, and the reflectivity, the work function and the microcavity effect of the R-pixel anode, the G-pixel anode and the B-pixel anode are adjusted respectively, so that the anode with the functions of driving voltage, reflectivity and microcavity effect is prepared.

[0012] Further, the step b of preparing the R-pixel anode specifically comprises:

[0013] 1) R-pixel anode deposition, from bottom to top, the adhesion layer, the reflection layer, the diffusion barrier layer and the work function adjusting layer, the thickness of the adhesion layer is 10-1000A, the material used is Ti or Ta or TiN or TaN; the thickness of the reflection layer is 500-5000A, the material used is Au; the thickness of the diffusion barrier layer is 10-200A, the material used is Ti or Ta or TiN or TaN; the thickness of the work function adjusting layer is 500-5000A, the material used is ITO or IGZO or IZO;

[0014] 2) etching barrier layer deposition, the barrier layer material is silicon oxide or silicon nitride or silicon oxynitride, so as to prevent the prepared pixel from being damaged when other pixels are prepared;

[0015] 3) covering a mask on the area where the R-pixel anode is located, and performing R-pixel photolithography;

[0016] 4) R-pixel etching / peeling, etching the etching barrier layer and the anode in sequence to form the R-pixel anode, and then removing the photoresist by dry or wet peeling.

[0017] Further, the step c of preparing the G-pixel anode specifically comprises:

[0018] 1) G-pixel anode deposition, from bottom to top, the adhesion layer, the reflection layer, the diffusion barrier layer and the work function adjusting layer, the thickness of the adhesion layer is 10-1000A, the material used is Ti or Ta or TiN or TaN; the thickness of the reflection layer is 500-2000A, the material used is Al or Ag; the thickness of the diffusion barrier layer is 10-200A, the material used is Ti or Ta or TiN or TaN; the thickness of the work function adjusting layer is 200-3000A, the material used is ITO or IGZO or IZO;

[0019] 2) etching barrier layer deposition, the barrier layer material is silicon oxide or silicon nitride or silicon oxynitride, so as to prevent the prepared pixel from being damaged when other pixels are prepared;

[0020] 3) Cover the mask above the area where the G-pixel anode is located, and perform G-pixel photolithography;

[0021] 4) G-pixel etching / peeling, etching the etching stop layer and the anode in sequence to form the G-pixel anode, and then removing the photoresist by dry or wet peeling.

[0022] Further, the preparation of the B-pixel anode in step d specifically comprises:

[0023] 1) B-pixel anode deposition, from bottom to top in sequence: adhesive layer, reflective layer, diffusion barrier layer and work function adjustment layer, the thickness of the adhesive layer is 10-1000 A, and the material used is Ti or Ta or TiN or TaN; the thickness of the reflective layer is 500-2000 A, and the material used is Al or Ag; the thickness of the diffusion barrier layer is 10-200 A, and the material used is Ti or Ta or TiN or TaN; the thickness of the work function adjustment layer is 100-2000 A, and the material used is AZO or GZO or GaInSnO;

[0024] 2) Etching stop layer deposition, the stop layer material is silicon oxide or silicon nitride or silicon oxynitride, to prevent damage to the prepared pixels when preparing other pixels;

[0025] 3) Cover the mask above the area where the B-pixel anode is located, and perform B-pixel photolithography;

[0026] 4) B-pixel etching / peeling, etching the etching stop layer and the anode in sequence to form the B-pixel anode, and then removing the photoresist by dry or wet peeling.

[0027] The advantages of the technical scheme of the present application are:

[0028] The present application develops an independent preparation process for RGB three-pixel anodes, and the reflective layer and the work function layer of the RGB pixels use different materials and thicknesses to adjust the reflectivity, work function and microcavity effect of different pixels, prepare an anode with independent adjustment functions of driving voltage, reflectivity and microcavity effect, realize independent control of the driving voltage, reflectivity and microcavity effect of the RGB three pixels, match the different spectral requirements of the RGB pixels, enhance the red light of the R-pixel, reduce the blue light and green light; enhance the green light of the G-pixel, reduce the blue light and red light; enhance the blue light of the B-pixel, reduce the red light and green light; and further improve the efficiency and improve the color gamut. The present application solves the problems of the traditional Micro OLED white light+CF scheme, such as the unadjustable RGB pixel light, low efficiency and low color gamut. BRIEF DESCRIPTION OF DRAWINGS

[0029] The present application will be further described in detail below in combination with the drawings and specific embodiments:

[0030] Figure 1 It is a process flow chart for the multifunctional anode structure of the present application.

[0031] Figure 2 A schematic diagram of a multifunctional anode structure of the present application;

[0032] Figure 3 A normal Micro OLED RGB spectrum diagram;

[0033] Figure 4 A different metal thin film reflection spectrum diagram;

[0034] Figure 5 A different material work function table. DETAILED DESCRIPTION

[0035] In the present application, it is understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "planar direction", "circumferential direction", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation; be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0036] The OLED anode includes a high work function layer to improve hole injection efficiency, and a high reflectivity layer to improve the efficiency of the top emitting device, and generally uses a stacked metal structure. The high work function layer requires 1. Good electrical conductivity; 2. Higher work function, matching the energy level of the HOMO of the hole injection material; 3. Good chemical stability and morphological stability; 4. Good light transmission performance in the visible light region. Common high work function materials include ITO (indium tin oxide), IZO (indium zinc oxide), and other metal oxides. The high reflectivity layer generally uses silver or aluminum and other metal materials.

[0037] However, in the prior art, the WOLED RGB three pixels made by the open mask use the same material, which cannot distinguish RGB and cannot achieve independent control of RGB; if the materials and thicknesses of the RGB anode reflection layer and the work function layer can be adjusted respectively, and then the reflectivity and work function are adjusted respectively, the independent control of the driving voltage, reflectivity and microcavity effect of the RGB three pixels can be achieved, and then the spectrum of RGB can be adjusted respectively, and the device performance can be improved.

[0038] The application develops an RGB three-pixel anode independent preparation process, the anode reflection layer and the work function layer of the RGB pixel use different materials and thicknesses, the reflectivity, the work function and the microcavity effect of different pixels are adjusted, the anode with the independent adjustment function of the driving voltage, the reflectivity and the microcavity effect is prepared, the independent control of the driving voltage, the reflectivity and the microcavity effect of the RGB three pixels is realized, the different spectral requirements of the RGB pixels are matched, the R pixel enhances the red light and reduces the blue light and the green light; the G pixel enhances the green light and reduces the blue light and the red light; the B pixel enhances the blue light and reduces the red light and the green light; and then the efficiency is improved and the color gamut is improved. Figure 3 a normal Micro OLED RGB spectrum diagram, Figure 4 different metal thin film reflection spectrum diagrams and Figure 5 different material work function tables, the requirements of the RGB three anodes are screened, for example, the reflection layer of the R pixel can select gold, under the premise of ensuring the red light reflectivity, the blue light and the green light reflection are reduced, and the color gamut can be improved by about 10%. According to the different microcavity effects of different wavelengths, the transparent work function layers of the RGB three pixels select different thicknesses, for example, the work function layer of the R pixel is 1800A, the work function layer of the G pixel is 1200A, and the work function layer of the B pixel is 500A.

[0039] Specific embodiments are as follows:

[0040] As shown in Figures 1 to 5 a multifunctional anode structure of a micro display, characterized in that: the anode comprises an R-pixel anode 1, a G-pixel anode 2 and a B-pixel anode 3, the R-pixel anode, the G-pixel anode and the B-pixel anode each comprise a bonding layer, a reflection layer, a diffusion barrier layer and a work function adjusting layer 4, the bonding layer, the reflection layer, the diffusion barrier layer and the work function adjusting layer are sequentially arranged from bottom to top, the thicknesses of the reflection layers in the R-pixel anode, the G-pixel anode and the B-pixel anode are different, the materials used in the reflection layers are different, the thicknesses of the work function adjusting layers in the R-pixel anode, the G-pixel anode and the B-pixel anode are different, and the materials used in the work function adjusting layers are different. The independent control of the driving voltage, the reflectivity and the microcavity effect of the RGB three pixels can be realized, the different spectral requirements of the RGB pixels are matched, the R pixel enhances the red light, reduces the blue light and the green light; the G pixel enhances the green light, reduces the blue light and the red light; the B pixel enhances the blue light, reduces the red light and the green light; and then the efficiency is improved, the color gamut is improved, and the problems of the RGB pixel light output of the traditional Micro OLED white light+CF scheme being unable to be adjusted, the efficiency being low and the color gamut being low are solved.

[0041] Preferably, the thickness of the reflection layer in the R-pixel anode is 500-5000A, the thickness of the reflection layer in the G-pixel anode is 500-2000A, the thickness of the reflection layer in the B-pixel anode is 500-2000A, the material of the reflection layer in the R-pixel anode is Au, the material of the reflection layer in the G-pixel anode is Al or Ag, and the material of the reflection layer in the B-pixel anode is Al or Ag.

[0042] Preferably, the thickness of the work function adjusting layer in the R-pixel anode is 500-5000A, the thickness of the work function adjusting layer in the G-pixel anode is 200-3000A, and the thickness of the work function adjusting layer in the B-pixel anode is 100-2000A; the material of the work function adjusting layer in the R-pixel anode is ITO or IGZO or IZO, the material of the work function adjusting layer in the G-pixel anode is ITO or IGZO or IZO, and the material of the work function adjusting layer in the B-pixel anode is AZO or GZO or GaInSnO.

[0043] The thickness of the adhesive layer in the three pixel anodes R-pixel anode, G-pixel anode and B-pixel anode is 10-1000A, and the material of the adhesive layer in the three pixel anodes R-pixel anode, G-pixel anode and B-pixel anode is Ti or Ta or TiN or TaN, etc.; the thickness of the diffusion barrier layer in the three pixel anodes R-pixel anode, G-pixel anode and B-pixel anode is 10-200A, and the material of the diffusion barrier layer in the three pixel anodes R-pixel anode, G-pixel anode and B-pixel anode is Ti or Ta or TiN or TaN, etc.

[0044] Based on the above-mentioned multifunctional anode structure of micro display, the application also relates to a preparation process of the multifunctional anode structure of micro display, which comprises the following steps: step a: preparing a driving circuit wafer; step b: preparing an R-pixel anode; step c: preparing a G-pixel anode; step d: preparing a B-pixel anode; the R-pixel anode, the G-pixel anode and the B-pixel anode are prepared independently, the reflectivity, the work function and the microcavity effect of the R-pixel anode, the G-pixel anode and the B-pixel anode are adjusted respectively, the anode with the functions of driving voltage, reflectivity and microcavity effect is prepared, the independent control of the driving voltage, the reflectivity and the microcavity effect of the RGB pixel is realized, and the different spectra of the RGB pixel are matched.

[0045] According to the requirements of the OLED device, two or three different anode structures can be selected, two different anode structures are selected according to the requirements of the OLED device, one structure is shared by RB, RG or GB, and another structure is used for one pixel; three different anode structures are selected, and different anode structures are used for RGB respectively. The preparation sequence is not limited, and RGB, RBG, GBR, GRB, BGR and BRG can be used. The application is described in detail taking the three different anode structures and the R-G-B sequence as an example.

[0046] Step a: preparing a driving circuit wafer 5, preparing the circuit required for driving the OLED on a silicon wafer;

[0047] Step b: preparing an R-pixel anode

[0048] 1) R pixel anode deposition, generally using four layers of structure, from bottom to top in turn: 1. Adhesion layer, the thickness is 10-1000A, the material used can be selected from Ti, Ta, TiN or TaN, etc.; 2. Reflective layer, the thickness is 500-5000A, according to Figure 4 Metal thin film reflectance spectrum, the material used for the reflective layer is preferably gold (Au), which ensures high reflectivity of red light under the premise of reducing blue and green light reflection. Aluminum or silver can also be selected, but both do not have the function of reducing blue and green light reflection, so they can be selected according to actual needs; 3. Diffusion barrier layer, the thickness is 10-200A, the material used can be selected from Ti, Ta, TiN or TaN, etc.; 4. Work function adjustment layer, the thickness is 500-5000A, the longest wavelength of red light, so the thickness is selected to be 500-5000A, according to Figure 5 Different material work function table and OLED device requirements, select the work function layer suitable for R pixel, preferentially select ITO, IGZO, IZO and other materials with suitable work function; R pixel anode can be selected but not limited to Ti / Au / Ti / ITO, Ti / Au / Ti / IGZO, Ti / Au / Ti / IZO, etc.

[0049] 2) Etching barrier layer deposition, the barrier layer material can be selected from silicon oxide, silicon nitride or silicon oxynitride, etc., to prevent damage to the prepared pixel when preparing other pixels;

[0050] 3) Cover the mask on the area above the R pixel anode and perform R pixel lithography;

[0051] 4) R pixel etching / stripping, etch the etching barrier layer and anode in turn to form the R pixel anode, and then remove the photoresist by dry or wet stripping.

[0052] Step c: preparation of G pixel anode

[0053] 1) G pixel anode deposition, generally using four layers of structure, from bottom to top in turn: 1. Adhesion layer, the thickness is 10-1000A, the material used can be selected from Ti, Ta, TiN or TaN, etc.; 2. Reflective layer, the thickness is 500-2000A, according to Figure 4 Metal thin film reflectance spectrum, the material used for the reflective layer can be selected from aluminum or silver, which has a larger green light reflectivity; 3. Diffusion barrier layer, the thickness is 10-200A, the material used can be selected from Ti, Ta, TiN or TaN, etc.; 4. Work function adjustment layer, the thickness is 200-3000A, the green light wavelength is smaller than red light but larger than blue light, so the thickness is selected to be 300-3000A, according to Figure 5According to the work function table of different materials and the requirement of the OLED device, a work function layer suitable for the G pixel is selected, and ITO, IGZO, IZO and other materials with moderate work function are preferentially selected; the anode of the G pixel can be selected but is not limited to Ti / Al / Ti / ITO, Ti / Al / Ti / IGZO, Ti / Al / Ti / IZO, Ti / Ag / Ti / ITO, Ti / Ag / Ti / IZO and the like.

[0054] 2) Deposition of etching barrier layer, the barrier layer material is silicon oxide or silicon nitride or silicon oxynitride, to prevent damage to the prepared pixel when preparing other pixels;

[0055] 3) Covering a mask on the area where the anode of the G pixel is located, and performing photolithography on the G pixel;

[0056] 4) G pixel etching / peeling, etching the etching barrier layer and the anode in sequence, controlling the thickness of photolithography, and the thickness of the G pixel anode is the thickness of the G pixel anode plus the thickness of the etching barrier layer, so that the R pixel anode is also protected and will not damage the R pixel anode, and then the photoresist is removed by dry or wet peeling.

[0057] Step d: preparation of the B pixel anode

[0058] 1) B pixel anode deposition, generally using a four-layer structure, from bottom to top in sequence: 1. adhesive layer, thickness 10-1000A, the material can be selected from Ti, Ta, TiN or TaN and the like; 2. reflection layer, thickness 500-2000A, according to the Figure 4 metal thin film reflection spectrum, the material of the reflection layer can be selected from aluminum or silver, and the reflectivity of blue light is larger, and gold cannot be used, because the reflectivity of gold to blue light is too small; 3. diffusion barrier layer, thickness 10-200A, the material can be selected from Ti, Ta, TiN or TaN and the like; 4. work function adjustment layer, thickness 100-2000A, the shortest wavelength of blue light, and the smallest cavity length is required for the microcavity effect, so the thickness is selected to be 100-2000A, according to the Figure 5 According to the work function table of different materials and the requirement of the OLED device, a work function layer suitable for the G pixel is selected, and ITO, IGZO, IZO and other materials with moderate work function are preferentially selected; the anode of the G pixel can be selected but is not limited to Ti / Al / Ti / ITO, Ti / Al / Ti / IGZO, Ti / Al / Ti / IZO, Ti / Ag / Ti / ITO, Ti / Ag / Ti / IZO and the like.

[0059] 2) Deposition of etching barrier layer, the barrier layer material is silicon oxide or silicon nitride or silicon oxynitride, to prevent damage to the prepared pixel when preparing other pixels;

[0060] 3) Cover the mask plate above the area where the B pixel anode is located, and perform B pixel lithography;

[0061] 4) B pixel etching / peeling, etching the etching stop layer and the anode in sequence, controlling the thickness of lithography, and the lithography is the thickness of the B pixel anode plus the thickness of the etching stop layer, forming the B pixel anode, so that the R pixel anode and the G pixel anode are also protected, and the R pixel anode and the G pixel anode are not damaged, and then the photoresist is removed by dry or wet stripping to obtain the prepared R pixel anode, G pixel anode and B pixel anode.

[0062] The RGB three-pixel anode independent preparation process is developed, the anode reflective layer and the work function layer of the RGB pixel use different materials and thicknesses, the reflectivity, work function and microcavity effect of different pixels are adjusted, the anode with the functions of separately adjusting the driving voltage, reflectivity and microcavity effect is prepared, the independent control of the driving voltage, reflectivity and microcavity effect of the RGB three pixels is realized, the different spectral requirements of the RGB pixels are matched, the R pixel enhances red light and reduces blue light and green light; the G pixel enhances green light and reduces blue light and red light; the B pixel enhances blue light and reduces red light and green light; and then the efficiency is improved and the color gamut is improved. The problems of the traditional Micro OLED white light+CF scheme that the RGB pixel light output cannot be adjusted, the efficiency is low, and the color gamut is low are solved.

[0063] The above describes the application with reference to the drawings, and it is obvious that the specific implementation of the application is not limited to the above manner, and various non-essential improvements or direct application of the concept and technical scheme of the application to other occasions without improvement are within the protection scope of the application.

Claims

1. A microdisplay multifunction anode structure, characterized by: The anode comprises an R-pixel anode, a G-pixel anode and a B-pixel anode, each of which comprises a bonding layer, a reflecting layer, a diffusion barrier layer and a work function adjusting layer, which are sequentially arranged from bottom to top, the thicknesses and materials of the reflecting layers in the three pixel anodes are different, and the thicknesses and materials of the work function adjusting layers in the three pixel anodes are different; the thickness of the reflecting layer in the R-pixel anode is 500-5000 angstroms, the thickness of the reflecting layer in the G-pixel anode is 500-2000 angstroms, and the thickness of the reflecting layer in the B-pixel anode is 500-2000 angstroms; the material of the reflecting layer in the R-pixel anode is Au, the material of the reflecting layer in the G-pixel anode is Al or Ag, and the material of the reflecting layer in the B-pixel anode is Al or Ag; the thickness of the work function adjusting layer in the R-pixel anode is 500-5000 angstroms, the thickness of the work function adjusting layer in the G-pixel anode is 200-3000 angstroms, and the thickness of the work function adjusting layer in the B-pixel anode is 100-2000 angstroms; the material of the work function adjusting layer in the R-pixel anode is ITO or IGZO or IZO, the material of the work function adjusting layer in the G-pixel anode is ITO or IGZO or IZO, and the material of the work function adjusting layer in the B-pixel anode is AZO or GZO or GaInSnO.

2. A microdisplay multi-functional anode structure as claimed in claim 1, characterized in that: The thicknesses of the bonding layers in the three pixel anodes are all 10-1000 angstroms, and the materials of the bonding layers in the three pixel anodes are Ti or Ta or TiN or TaN; the thicknesses of the diffusion barrier layers in the three pixel anodes are all 10-200 angstroms, and the materials of the diffusion barrier layers in the three pixel anodes are Ti or Ta or TiN or TaN.

3. A process for fabricating a microdisplay multifunction anode structure, characterized by: Based on the multifunctional anode structure of the micro display according to claim 1 or 2, the preparation process comprises the following steps: step a: preparing a driving circuit wafer; step b: preparing an R-pixel anode; step c: preparing a G-pixel anode; and step d: preparing a B-pixel anode. The R-pixel anode, the G-pixel anode and the B-pixel anode are independently prepared, and the reflectivity, the work function and the microcavity effect of the R-pixel anode, the G-pixel anode and the B-pixel anode are independently adjusted, so that the anode with the functions of independently adjusting the driving voltage, the reflectivity and the microcavity effect is prepared.

4. The process for fabricating a microdisplay multifunction anode structure of claim 3, wherein: The step b of preparing the R-pixel anode specifically comprises the following steps: 1) R-pixel anode deposition, sequentially from bottom to top: bonding layer, reflecting layer, diffusion barrier layer and work function adjusting layer, the thickness of the bonding layer is 10-1000 angstroms, and the material is Ti or Ta or TiN or TaN; the thickness of the reflecting layer is 500-5000 angstroms, and the material is Au; the thickness of the diffusion barrier layer is 10-200 angstroms, and the material is Ti or Ta or TiN or TaN; the thickness of the work function adjusting layer is 500-5000 angstroms, and the material is ITO or IGZO or IZO; 2) etching stop layer deposition, the stop layer material is silicon oxide or silicon nitride or silicon oxynitride, preventing the prepared pixel from being damaged when other pixels are prepared; 3) covering a mask on the area where the R pixel anode is located, performing R pixel lithography; 4) R pixel etching / peeling, etching the etching stop layer and the anode in sequence to form the R pixel anode, and then removing the photoresist by dry or wet peeling.

5. The process for fabricating a microdisplay multi-functional anode structure of claim 3, wherein: The preparation of the G pixel anode in step c specifically comprises: 1) G pixel anode deposition, from bottom to top in sequence: adhesive layer, reflective layer, diffusion barrier layer and work function adjustment layer, the adhesive layer has a thickness of 10-1000 A, and the material used is Ti or Ta or TiN or TaN; the reflective layer has a thickness of 500-2000 A, and the material used is Al or Ag; the diffusion barrier layer has a thickness of 10-200 A, and the material used is Ti or Ta or TiN or TaN; the work function adjustment layer has a thickness of 200-3000 A, and the material used is ITO or IGZO or IZO; 2) etching stop layer deposition, the stop layer material is silicon oxide or silicon nitride or silicon oxynitride, preventing the prepared pixel from being damaged when other pixels are prepared; 3) covering a mask on the area where the G pixel anode is located, performing G pixel lithography; 4) G pixel etching / peeling, etching the etching stop layer and the anode in sequence to form the G pixel anode, and then removing the photoresist by dry or wet peeling.

6. The process for fabricating a microdisplay multi-functional anode structure of claim 3, wherein: The preparation of the B pixel anode in step d specifically comprises: 1) B pixel anode deposition, from bottom to top in sequence: adhesive layer, reflective layer, diffusion barrier layer and work function adjustment layer, the adhesive layer has a thickness of 10-1000 A, and the material used is Ti or Ta or TiN or TaN; the reflective layer has a thickness of 500-2000 A, and the material used is Al or Ag; the diffusion barrier layer has a thickness of 10-200 A, and the material used is Ti or Ta or TiN or TaN; the work function adjustment layer has a thickness of 100-2000 A, and the material used is AZO or GZO or GaInSnO; 2) etching stop layer deposition, the stop layer material is silicon oxide or silicon nitride or silicon oxynitride, preventing the prepared pixel from being damaged when other pixels are prepared; 3) covering a mask on the area where the B pixel anode is located, performing B pixel lithography; 4) B pixel etching / peeling, etching the etching stop layer and the anode in sequence to form the B pixel anode, and then removing the photoresist by dry or wet peeling.

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