Gas delivery arrangement and vapour deposition apparatus

Abstract

The application provides a gas delivery structure and a vapor deposition apparatus. The gas delivery structure comprises: a gas distribution block comprising a plurality of gas inlets and a plurality of independent gas paths, wherein a first inlet is connected to an inner zone baffle of a shower plate via a first gas path, a second inlet is connected to an outer zone baffle of the shower plate via a second gas path, and a third inlet is connected to a purge gas distribution plate of the shower plate via a third gas path; and the shower plate comprises the inner zone baffle, the outer zone baffle, and the purge gas distribution plate, wherein inner zone reaction gas is sprayed to a center region of a wafer to be processed via the first inlet, the first gas path, and the inner zone baffle, outer zone reaction gas is sprayed to an edge region of the wafer to be processed via the second inlet, the second gas path, and the outer zone baffle, and purge gas is sprayed to the center region and the edge region of the wafer tray via the third inlet, the third gas path, and the purge gas distribution plate.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing, and in particular to a gas delivery structure and a vapor deposition apparatus. BACKGROUND

[0002] In a semiconductor thin film deposition apparatus, a gas pipeline structure is usually configured to transport cleaning gas to achieve the cleaning function of the inside of a reaction cavity, a gas delivery pipeline, a shower plate and other facilities. However, the conventional method in the prior art is to introduce gas in the middle, and the gas concentrated in the central area is dispersed to the periphery by the suction force of the cavity. This often leads to the phenomenon of thick center and thin edge of the wafer. Moreover, the prior art in the art cannot deliver cleaning gas to different areas to achieve cleaning of different areas.

[0003] In order to overcome the above-mentioned defects existing in the prior art, the technical field urgently needs a gas delivery structure for adjusting the gas flow of different areas to achieve the adjustment of the gas concentration of different areas above the wafer, thereby achieving the adjustment of the different thicknesses of the deposited film, and being capable of delivering cleaning gas to different areas to clean different areas. SUMMARY

[0004] The following gives a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an extensive overview of all contemplated aspects, and is neither intended to identify key or critical elements of all aspects nor to delineate the scope of any or all aspects. Its only purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description given later.

[0005] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a gas delivery structure and a vapor deposition apparatus, which can adjust the gas flow of different areas to achieve the adjustment of the gas concentration of different areas above the wafer, thereby achieving the adjustment of the different thicknesses of the deposited film, and being capable of delivering cleaning gas to different areas to clean different areas.

[0006] Specifically, the gas delivery structure according to the first aspect of the present application comprises: a gas distribution block comprising a plurality of gas inlets and a plurality of independent gas paths, wherein a first inlet is connected to an inner zone baffle of a shower plate via a first gas path, a second inlet is connected to an outer zone baffle of the shower plate via a second gas path, and a third inlet is connected to a purge gas distribution plate of the shower plate via a third gas path; and the shower plate comprising the inner zone baffle, the outer zone baffle and the purge gas distribution plate, wherein inner zone reaction gas is sprayed to a center region of a wafer to be processed via the first inlet, the first gas path and the inner zone baffle, outer zone reaction gas is sprayed to an edge region of the wafer to be processed via the second inlet, the second gas path and the outer zone baffle, and purge gas is sprayed to a center region and an edge region of a wafer tray via the third inlet, the third gas path and the purge gas distribution plate.

[0007] Further, in some embodiments of the present application, the gas delivery structure further comprises: a mixing ring installed in the interior of the gas distribution block and provided with a longitudinally extending gas inlet pipe, wherein a gap is provided between the outer wall of the gas inlet pipe and the inner wall of the gas distribution block, the upper portion of the gas inlet pipe is provided with a first gas passing hole, and the lower portion of the gas inlet pipe is connected to the inner zone baffle of the shower plate, the first gas path is connected to the lower portion of the gap, the inner zone reaction gas reaches the lower portion of the gap via the first inlet and the first gas path, reaches the first gas passing hole upward along the gap, enters the gas inlet pipe via the first gas passing hole, and reaches the inner zone baffle downward along the gas inlet pipe.

[0008] Further, in some embodiments of the present application, the gas delivery structure further comprises: an RPS block, the first end of which is connected to the gas source of the purge gas, and the second end of which is connected to the third inlet, for ionizing the purge gas and inputting the ionized purge gas into the third inlet.

[0009] Further, in some embodiments of the present application, a narrow section is provided on the gas path between the first end and the second end of the RPS block, the caliber of the narrow section is smaller than the first caliber of the first end and the second caliber of the second end, so as to form a local high gas pressure in the narrow section.

[0010] Further, in some embodiments of the present application, a bending part is provided on the gas path between the first end and the second end of the RPS block, for changing the delivery direction of the purge gas, so as to weaken the impulse of the purge gas in the input direction.

[0011] Further, in some embodiments of the present application, the purge gas distribution plate is arranged between the inner zone baffle and the outer zone baffle.

[0012] Further, in some embodiments of the present application, the cleaning gas distribution plate is provided with a plurality of inner zone gas holes and a plurality of outer zone gas holes, wherein the number of the outer zone gas holes is greater than the number of the inner zone gas holes, and / or the diameter of the outer zone gas holes is greater than the diameter of the inner zone gas holes, so as to improve the uniformity of the local pressure of the cleaning gas in the center region and the edge region of the wafer tray.

[0013] Further, in some embodiments of the present application, the gas delivery structure further comprises an inner-outer zone separation ring, which is arranged between the plurality of inner zone gas holes and the plurality of outer zone gas holes, for separating the center region and the edge region of the wafer tray, so as to facilitate independent adjustment of the local pressure of the cleaning gas in the center region and the edge region of the wafer tray.

[0014] In addition, according to the second aspect of the present application, a vapor deposition apparatus is provided, which comprises a reaction chamber, wherein a wafer tray is arranged for carrying wafers to be processed; and the gas delivery structure, which is connected to the reaction chamber for providing reaction gas and cleaning gas to the reaction chamber. BRIEF DESCRIPTION OF DRAWINGS

[0015] The above features and advantages of the present application will be better understood through reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which: in the drawings, components are not necessarily drawn to scale, and components having similar or related properties or features can have the same or similar reference numerals.

[0016] Figure 1 A schematic diagram of a processing apparatus for a semiconductor device according to some embodiments of the present application is shown.

[0017] Figure 2 A structural schematic diagram of a shower baffle according to some embodiments of the present application is shown.

[0018] Figure 3 A schematic diagram of a gas delivery structure and a gas flow direction for a process gas according to some embodiments of the present application is shown.

[0019] Figure 4 A schematic diagram of a cleaning gas delivery structure and a cleaning gas flow direction according to some embodiments of the present application is shown.

[0020] Figure 5 A structural schematic diagram of a gas mixing ring according to some embodiments of the present application is shown.

[0021] Figure 6 A cross-sectional schematic diagram of a shower baffle according to some embodiments of the present application is shown.

[0022] Figure 7A top view of a remote plasma module provided according to some embodiments of the present invention is shown.

[0023] Figure 8 A schematic diagram of the structure of a remote plasma module provided according to some embodiments of the present invention is shown. Detailed Implementation

[0024] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0025] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0026] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0027] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0028] As mentioned above, in a semiconductor thin film deposition apparatus, it is usually necessary to configure a gas pipeline structure to transport cleaning gas to achieve the cleaning function of the inside of a reaction chamber, gas delivery pipeline, shower plate and other facilities. However, the conventional practice in the art is to introduce the gas in the middle, and rely on the suction of the chamber to disperse the gas concentrated in the central area to the periphery, which often leads to the phenomenon of thick center and thin edge of the wafer. Moreover, the prior art in the art cannot achieve the delivery of cleaning gas to different areas to achieve cleaning of different areas.

[0029] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a gas delivery structure and a vapor deposition apparatus, which adjusts the gas flow of different areas to achieve the adjustment of the gas concentration of different areas above the wafer, thereby achieving the adjustment of the different thicknesses of the deposited film, and can deliver cleaning gas to different areas to clean different areas.

[0030] In some non-limiting embodiments, the gas delivery structure provided by the first aspect of the present application can be configured in the above-mentioned vapor deposition apparatus provided by the second aspect of the present application.

[0031] First of all, please refer to Figure 1 , Figure 1 shows a schematic diagram of a vapor deposition apparatus provided according to some embodiments of the present application.

[0032] As Figure 1 shown, in some embodiments of the present application, the vapor deposition apparatus provided by the second aspect of the present application includes a remote plasma system (RPS) module 11, a gas distribution block 12, a shower head upper cover 13, a shower plate 18, a reaction chamber (not shown) and a wafer tray (not shown). The present application can pass the process gas which reacts separately through the gas distribution block 12. After the process gas passes through the gas distribution block 12, the process gas is delivered to the inner and outer areas of the shower plate 18 through the shower head upper cover 13, and then the process gas enters the reaction chamber (not shown) located below the shower plate, by adjusting the gas concentration of the inner and outer areas, to achieve the adjustment of the gas concentration of different areas above the wafer (not shown) located on the wafer tray, thereby achieving the adjustment of the different thicknesses of the deposited film.

[0033] In addition, please refer to Figure 2 , Figure 3 and Figure 4 , Figure 2 shows a structural schematic diagram of a shower baffle provided according to some embodiments of the present application, Figure 3 shows a schematic diagram of the delivery structure and the flow direction of the process gas provided according to some embodiments of the present application, Figure 4A schematic diagram of a cleaning gas delivery structure and a cleaning gas flow direction according to some embodiments of the present application is shown.

[0034] As shown in Figure 1 , Figure 2 , Figure 3 and Figure 4 , the gas delivery structure can include a gas distribution block 11 and a shower plate 18. Here, the gas distribution block 11 includes three gas inlets 14, 15, 45 and three independent gas paths 16, 17, 46. The gas inlet 14 is an inner zone passage inlet for process gas. The gas inlet 15 is an outer zone passage inlet for process gas. The gas inlet 45 is a passage inlet for cleaning gas. The independent gas path 16 is an inner zone independent gas path. The independent gas path 17 is an outer zone independent gas path. The independent gas path 46 is a cleaning gas independent gas path. The shower plate 18 can include an inner zone baffle 21, an outer zone baffle 22, a cleaning gas distribution plate 23 and an inner-outer zone separation ring 24.

[0035] The present application can pass process gas that will react through the inner zone gas inlet 14 and the outer zone gas inlet 15, respectively, and pass the gas through the inner zone gas inlet 14 to the inner zone baffle 21 of the shower plate 18 via the inner zone independent gas path 16, and then spray the gas to the center region of the wafer via the shower plate 18, as shown by 31 in Figure 3 . Similarly, the present application can pass the gas through the outer zone gas inlet 15 to the outer zone baffle 22 of the shower plate via the outer zone independent gas path 17, and then spray the gas to the edge region of the wafer via the shower plate, as shown by 32 in Figure 3 . In this way, the present application can adjust the gas flow in different regions to adjust the gas concentration in different regions above the wafer, thereby adjusting the thickness of the deposited film.

[0036] The present application can also pass cleaning gas through the passage inlet 45 for cleaning gas. The cleaning gas is then passed through the passage inlet 45 for cleaning gas, to the cleaning gas distribution plate 23 via the cleaning gas independent gas path 46, and sprayed to the center region and the edge region of the wafer tray via the shower plate 18. In this way, the present application can effectively prevent the process gas that will react from meeting in the cleaning gas delivery passage in extreme cases, causing a reaction and causing particle problems.

[0037] Please further refer to Figure 1 , Figure 2 , Figure 3 and Figure 5 , Figure 5 A schematic diagram of the structure of a mixing ring according to some embodiments of the present application is shown.

[0038] As shown in Figure 5As shown, in some embodiments of the present invention, the gas delivery structure may further include a mixing ring. This mixing ring is installed inside the gas distribution block 12 and has a longitudinally extending inlet pipe 34. A gap 33 is provided between the outer wall of the inlet pipe 34 and the inner wall of the gas distribution block 12. The upper part of the inlet pipe 34 has a first air passage 51, while its lower part leads to the inner zone baffle 21 of the spray plate 18. The first air passage 16 leads to the lower part of the gap 33. The internal reaction gas reaches the lower part of the gap 33 via the first inlet 14 and the first air passage 16, ascends along the gap 33 to the first air passage 51, enters the inlet pipe 34 via the first air passage 51, and then descends along the inlet pipe 34 to the inner zone baffle 21. In this way, the internal gas can enter the spray plate 18 vertically, thereby reducing the lateral impulse of the internal gas and improving the uniformity of the internal gas.

[0039] Please refer to further details. Figure 4 and Figure 6 . Figure 6 A cross-sectional schematic diagram of a spray plate provided according to some embodiments of the present invention is shown.

[0040] like Figure 4 and Figure 6 As shown, in some embodiments of the present invention, the gas delivery structure may further include a nozzle cover 42. This nozzle cover 42 is used to construct and seal the upper space of the spray plate 18 and is provided with a plurality of second air passages 61. Here, the second gas path 17 leads to the upper space of the outer zone baffle 22 via the plurality of second air passages 61. After the outer zone reaction gas undergoes initial homogenization treatment via the plurality of second air passages 61, it radiates and diffuses outward from the upper space of the outer zone baffle 22, and then undergoes secondary homogenization treatment via the outer zone baffle 22 to reach the edge region of the wafer to be processed. Thus, the present invention improves the uniformity of the outer zone gas through the aforementioned secondary homogenization treatment.

[0041] Please refer to further details. Figure 4 , Figure 7 and Figure 8 , Figure 7 A top view of a remote plasma module provided according to some embodiments of the present invention is shown. Figure 8 A schematic diagram of the structure of a remote plasma module provided according to some embodiments of the present invention is shown.

[0042] like Figure 4 , Figure 7 and Figure 8As shown, further, in some embodiments of the present invention, the remote plasma module 41 has its first end 44 connected to the gas source of the cleaning gas, and its second end connected to the third inlet 45, for ionizing the cleaning gas and inputting the ionized cleaning gas into the third inlet 45. The remote plasma module may include five downward channels 71 for the cleaning gas to flow downward into the spray plate 18. The remote plasma module 41 may also include an inner ring cleaning gas channel 81 and an outer zone cleaning channel 82. Here, the inner ring cleaning gas channel 81 has small and few pores, while the outer zone cleaning channel 82 has large and many pores.

[0043] Furthermore, a narrow section 43 is provided in the gas path between the first and second ends of the remote plasma module 41. The diameter of the narrow section 43 is smaller than the first diameter of the first end 44 and the second diameter of the second end, so as to form a local high pressure in the narrow section. In this way, the present invention can provide a local high pressure through the convergence structure, i.e., the bend 43, which first becomes smaller and then larger, to prevent the process gas from flowing back along the RPS block, thereby preventing the backflowing process gas from meeting and reacting in the cleaning gas delivery channel, thus avoiding particle size problems.

[0044] Furthermore, a bend 47 is provided in the gas path between the first end 44 and the second end of the remote plasma module 41 to change the delivery direction of the cleaning gas, thereby reducing the impulse of the cleaning gas along the input direction and improving the uniformity of the cleaning gas. Preferably, the bend can be provided in the narrow section 43 to further improve the uniformity of the cleaning gas through local high pressure.

[0045] Furthermore, such as Figure 4 As shown, in some embodiments of the present invention, the cleaning gas distribution plate 23 is disposed between the inner zone baffle 21 and the outer zone baffle 22. Thus, the present invention can position the process gas flow channel at the center of the entire intake system, distributing the cleaning gas around the periphery, which is more beneficial for the uniformity and centering of the process gas distribution.

[0046] Furthermore, such as Figure 4 As shown, because some of the cleaning gas first reaches the central region of the wafer tray through the inner vent 232 and then diffuses towards the edge region, it is blocked by another portion of the gas reaching the edge region of the wafer tray through the outer vent 231. This can easily lead to a situation where the internal gas pressure is high and the external gas pressure is low. Therefore, the cleaning gas distribution plate 23 is provided with multiple inner vent 232s and multiple outer vent 231s. Here, the number of outer vent 231s is greater than the number of inner vent 232s, and the diameter of the outer vent 231s is larger than the diameter of the inner vent 232s, in order to improve the uniformity of the local partial pressure of the cleaning gas in the central and edge regions of the wafer tray.

[0047] Further, in some embodiments of the present application, the inner-outer zone isolation ring 24 is disposed between the plurality of inner zone gas holes 232 and the plurality of outer zone gas holes 231 for isolating the center region and the edge region of the wafer tray to facilitate independent adjustment of the local partial pressure of the cleaning gas in the center region and the edge region of the wafer tray, thereby supporting independent cleaning and differential cleaning of the center region or the edge region.

[0048] Although the above-described methods are illustrated and described as a series of acts, it will be appreciated that the methods are not limited by the order of acts, as some acts can, in accordance with one or more embodiments, occur simultaneously or in different order than shown and described herein, or can be omitted entirely, depending on the circumstances. For example, it is possible for two acts to occur simultaneously.

[0049] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas delivery structure, characterized by, The utility model relates to a shower head, which comprises: a gas distribution block comprising a plurality of gas inlets and a plurality of independent gas paths, wherein a first inlet is connected to an inner zone baffle of a shower plate via a first gas path, a second inlet is connected to an outer zone baffle of the shower plate via a second gas path, and a third inlet is connected to a cleaning gas distribution plate of the shower plate via a third gas path; the shower plate comprising the inner zone baffle, the outer zone baffle, and the cleaning gas distribution plate, wherein the inner zone baffle is provided with a plurality of first reaction gas holes, the outer zone baffle is provided with a plurality of second reaction gas holes, and the cleaning gas distribution plate is provided with a plurality of cleaning gas holes, inner zone reaction gas is sprayed to a center region of a wafer to be processed via the first inlet, the first gas path, and the plurality of first reaction gas holes on the inner zone baffle, outer zone reaction gas is sprayed to an edge region of the wafer to be processed via the second inlet, the second gas path, and the plurality of second reaction gas holes on the outer zone baffle, and cleaning gas is sprayed to a center region and an edge region of a wafer tray via the third inlet, the third gas path, and the plurality of cleaning gas holes on the cleaning gas distribution plate; a gas mixing ring installed in the interior of the gas distribution block and provided with a longitudinally extending gas inlet pipe, wherein a gap is formed between the outer wall of the gas inlet pipe and the inner wall of the gas distribution block, the upper portion of the gas inlet pipe is provided with a first gas passing hole, and the lower portion of the gas inlet pipe is connected to the inner zone baffle of the shower plate, the first gas path is connected to the lower portion of the gap, the inner zone reaction gas reaches the lower portion of the gap via the first inlet and the first gas path, reaches the first gas passing hole upward along the gap, enters the gas inlet pipe via the first gas passing hole, and reaches the inner zone baffle downward along the gas inlet pipe; and an RPS block having a first end connected to a gas source of the cleaning gas and a second end connected to the third inlet, for ionizing the cleaning gas and inputting the ionized cleaning gas into the third inlet, wherein a narrow section is arranged in the gas path between the first end and the second end of the RPS block, and the diameter of the narrow section is smaller than the first diameter of the first end and the second diameter of the second end.

2. The gas delivery arrangement of claim 1, wherein, Further comprising: a shower head upper cover for building and sealing the upper space of the shower plate and provided with a plurality of second gas passing holes, wherein the second gas path is connected to the upper space of the outer zone baffle via the plurality of second gas passing holes, and the outer zone reaction gas is diffused outward in the upper space of the outer zone baffle after the first uniform gas treatment via the plurality of second gas passing holes, and then is subjected to the second uniform gas treatment via the outer zone baffle to reach the edge region of the wafer to be processed.

3. The gas delivery arrangement of claim 1, wherein, A bending part is arranged in the gas path between the first end and the second end of the RPS block, for changing the conveying direction of the cleaning gas to weaken the impulse of the cleaning gas in the input direction.

4. The gas delivery arrangement of claim 1, wherein, The cleaning gas distribution plate is arranged between the inner zone baffle and the outer zone baffle.

5. The gas delivery arrangement of claim 1 or 4, wherein, The cleaning gas holes include a plurality of inner zone gas holes and a plurality of outer zone gas holes, wherein the number of the outer zone gas holes is greater than the number of the inner zone gas holes, and / or the diameter of the outer zone gas holes is greater than the diameter of the inner zone gas holes, so as to improve the uniformity of the local pressure of the cleaning gas in the central region and the edge region of the wafer tray.

6. The gas delivery arrangement of claim 5, wherein, Also included are: An inner-outer zone isolation ring arranged between the plurality of inner zone gas holes and the plurality of outer zone gas holes, for isolating the central region and the edge region of the wafer tray, so as to facilitate independent adjustment of the local pressure of the cleaning gas in the central region and the edge region of the wafer tray.

7. A vapor deposition apparatus characterized by comprising: Including: A reaction cavity, wherein a wafer tray is arranged for carrying wafers to be processed; And The gas delivery structure according to any one of claims 1-6, connected to the reaction cavity to provide reaction gas and cleaning gas to the reaction cavity.

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