Multi-zone semiconductor substrate support

Abstract

An example support assembly can include a top puck characterized by a first surface and a second surface opposite the first surface. The top puck can define a recessed flange at an outer edge of the first surface of the top puck. The assembly can include a cooling plate coupled with the top puck adjacent the second surface of the top puck. The assembly can include a back plate coupled with the top puck around an exterior of the top puck. The back plate can at least partially define a volume with the top puck. The cooling plate can be contained within the volume. The assembly can include a heater disposed on the recessed flange of the top puck. The assembly can include an edge ring positioned on the heater and extending around the top puck. The edge ring can be maintained out of contact with the top puck.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Nonprovisional Application No. 17 / 200,080, filed March 12, 2021, entitled “MULTI-ZONE SEMICONDUCTORSUBSTRATE SUPPORTS,” the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] This technology relates to components and equipment used in semiconductor manufacturing. More specifically, this technology relates to substrate support assemblies and other semiconductor processing equipment. Background Technology

[0004] Integrated circuits are produced by creating complex patterned material layers on a substrate surface. Creating patterned material on a substrate requires controlled methods for forming and removing the material. The temperatures occurring during these processes can directly affect the final product. During processing, substrate temperature is typically controlled and maintained using components that support the substrate. Temperature fluctuations that may occur across the surface of the support components or deep within them can create temperature bands or regions across the entire substrate. These temperature variations can affect processes performed on or on the substrate, often reducing the uniformity of films deposited along the substrate or structures etched. Depending on the degree of variation along the substrate surface, inconsistencies arising from the application can lead to component failures.

[0005] Furthermore, numerous substrate supports may expose edge regions of the substrate, or may include recesses or edge rings extending around the substrate. Etching agents and deposited materials generated within the chambers may have different effects on different areas of the substrate, and may have a significant impact on edge regions. As semiconductor processing continues to seek to increase the usable area on semiconductor wafers, maintaining the uniformity of substrate edge regions can affect how many wafers can be used in manufacturing.

[0006] Therefore, there is a need for improved systems and methods for producing high-quality components and structures. This technology addresses these and other needs. Summary of the Invention

[0007] An example support assembly can include a top puck characterized by a first surface and a second surface opposite the first surface. The top puck can define a recessed flange at an outer edge of the first surface of the top puck. The assembly can include a cooling plate coupled with the top puck adjacent the second surface of the top puck. The assembly can include a back plate coupled with the top puck about an exterior of the top puck. The back plate can at least partially define a volume with the top puck. The cooling plate can be contained within the volume. The assembly can include a heater disposed on the recessed flange of the top puck. The assembly can include an edge ring positioned on the heater and extending about the top puck. The edge ring can be maintained out of contact with the top puck.

[0008] In some embodiments, the top puck can define a thermal break between an inner region and an outer region of the top puck. The thermal break can include a groove defined about an inner radius of the top puck. The thermal break can include a first groove defined about an inner radius of the top puck at a first surface of the top puck and a second groove defined about a second inner radius of the top puck at a second surface of the top puck opposite the first surface. The edge ring can extend perpendicularly over the first surface of the top puck at an outer radius of the edge ring. The edge ring can be recessed below the first surface of the top puck at an inner radius of the edge ring. The edge ring can be characterized by an outer diameter equal to an outer diameter of the top puck. The edge ring can include a skirt extending past an outer edge of the heater. The heater can define an inner volume within which a heating element extends. The heating element can extend through the top puck into the heater. The heater can contact the top puck at two or more standoffs from the heater. One of the two or more standoffs can define an access port through which the heating element extends into the heater. One of the two or more standoffs can define a channel about the access port. The heater can include a gasket positioned within the channel about the access port. The top puck can be or include aluminum or ceramic. The edge ring can be or include nickel plated at least partially on the edge ring.

[0009] Some embodiments of the present technology can include a substrate support assembly. The assembly can include a top puck characterized by a first surface and a second surface opposite the first surface. The top puck can define a recessed flange at an outer edge of the first surface of the top puck. The assembly can include a heater disposed on the recessed flange of the top puck. The assembly can include an edge ring positioned on the heater and extending about the top puck. The edge ring can be maintained out of contact with the top puck.

[0010] In some embodiments, the top puck can define a plurality of recessed ledges at an outer edge of the first surface of the top puck. The heater can be located on an outermost recessed ledge of the plurality of recessed ledges. The heater can extend vertically beyond inner recessed ledges of the plurality of recessed ledges. The heater can define a recessed ledge at an inner edge of the heater. A channel can be formed between the recessed ledge of the heater and an inner recessed ledge of the plurality of recessed ledges of the top puck. An edge ring can extend within the channel. An inner edge of the edge ring can be disposed vertically recessed from the first surface of the top puck. The heater can define an interior volume within which the heating element extends. The heater can include a body defining an interior volume within which the heating element extends. The heater can include a cover coupled to the body. The heating element can be in direct contact with the cover around the heater.

[0011] Some embodiments of the present technology can include a substrate support assembly. The assembly can include a top puck characterized by a first surface and a second surface opposite the first surface. The top puck can define a recessed ledge at an outer edge of the first surface of the top puck. The assembly can include a heater disposed on the recessed ledge of the top puck. The heater can include a body defining an interior volume within which a heating element extends. The heater can include a cover coupled to the body. The heating element can be in direct contact with the cover around the heater. The assembly can include an edge ring located on the heater and extending around the top puck. The edge ring can be maintained out of contact with the top puck. In some embodiments, the heater can contact the top puck at two or more standoffs from the heater. One of the two or more standoffs can define an access port for the heating element to extend into the heater. One of the two or more standoffs can define a channel around the access port. The heater can include a gasket located within the channel around the access port.

[0012] Such technology can provide significant advantages over conventional systems and techniques. For example, by incorporating additional heating elements, a support according to some embodiments of the present technology can have the ability to provide temperature control to the far edge of a substrate. Further, by having the heater as a separate component from the top puck, an increased temperature differential can be provided between the edge and inner regions of a substrate support. These and other embodiments, along with many of their advantages, are described in more detail in conjunction with the drawing figures and the following description. BRIEF DESCRIPTION OF DRAWINGS

[0013] A further understanding of the nature and advantages of the disclosed technology can be realized by reference to the remaining portions of the specification and the drawings.

[0014] Figure 1 A top plan view of an exemplary processing system according to some embodiments of the present technology is shown.

[0015] Figure 2AA schematic cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology is shown.

[0016] Figure 2B A detailed view of an exemplary showerhead according to some embodiments of the present technology is shown.

[0017] Figure 3 A bottom plan view of an exemplary showerhead according to some embodiments of the present technology is shown.

[0018] Figure 4 A schematic partial cross-sectional view of an exemplary substrate support assembly according to some embodiments of the present technology is shown.

[0019] Figure 5A A schematic top isometric view of an exemplary edge ring heater according to some embodiments of the present technology is shown.

[0020] Figure 5B A schematic bottom isometric view of an exemplary edge ring heater according to some embodiments of the present technology is shown.

[0021] Figure 6 A schematic partial cross-sectional view of an exemplary substrate support assembly according to some embodiments of the present technology is shown.

[0022] Figures 7A to 7C A schematic partial cross-sectional view of an exemplary edge ring according to some embodiments of the present technology is shown.

[0023] Several of the figures in the drawings are included as schematic representations of embodiments of the present technology. It should be understood that the figures are presented for illustrative purposes and do not represent a limiting aspect of the present technology, unless explicitly stated as such. Additionally, the figures can not be to scale and can be simplified for the sake of visualization unless otherwise specifically stated. Further, as schematics, the figures are provided to aid in the understanding of concepts and can not include all aspects or information for the sake of brevity, as compared to a true representation, and can include exaggeration in order to emphasize certain aspects.

[0024] In the drawings, like reference numerals can be used to denote similar components throughout the several views. Additionally, various components of the same type can be distinguished from each other by a letter attached to the reference numeral, e.g., 102a, 102b, etc. Where only the first reference numeral is used, unless otherwise indicated, the description can be assumed to apply to any of the like referenced components having the same first reference number, irrespective of the letter. DETAILED DESCRIPTION

[0025] The present technology includes improved susceptor designs for heating and cooling profiles during semiconductor processing operations. While conventional susceptors can control the overall temperature of a substrate during operation, the technology described herein allows for improved control of temperature characteristics across the entire surface and exterior of the susceptor. The present technology allows for control of the susceptor in multiple independent zones within a limited temperature range. As this can perform improved operations because a substrate located on the susceptor can maintain a more uniform temperature profile across the entire surface. Further, by incorporating specific edge ring heaters as described below, temperature control of the far edge can be controlled more independently to limit far edge effects during semiconductor processing. These and other benefits will be explained in detail below.

[0026] While the remaining disclosure will routinely identify specific etching processes that utilize the disclosed technology, it should be readily understood that the systems and methods can equally apply to deposition and cleaning processes that can occur in the described chambers. Accordingly, the present technology should not be considered limited to use only for etching processes. Prior to describing additional variations and adjustments to this system according to embodiments of the present technology, the present disclosure will discuss one possible system and chamber that can be used in the present technology to perform certain removal operations.

[0027] Figure 1 A top view of one embodiment of a processing system 100 of deposition, etch, bake, and cure chambers according to embodiments is shown. In the figure, a pair of front opening unified pods 102 supply substrates of various sizes that are received by a robotic arm 104 and placed into a low pressure holding area 106, which is subsequently placed into one of the substrate processing chambers 108a-f located in tandem sections 109a-c. A second robotic arm 110 can be used to transfer substrate wafers from the holding area 106 to and from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f can be equipped to perform several substrate processing operations, including the dry etching processes described herein, as well as cyclic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and other substrate processes.

[0028] The substrate processing chambers 108a-f can include one or more system components for depositing, annealing, curing, and / or etching dielectric films on a substrate wafer. In one configuration, two pairs of processing chambers (e.g., 108c-d and 108e-f) can be used to deposit dielectric material on a substrate, while a third pair of processing chambers (e.g., 108a-b) can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a-f) can be configured to etch dielectric films on a substrate. Any one or more of the described processes can be performed in chamber(s) separate from the manufacturing system shown in different embodiments. It should be understood that the system 100 contemplates additional configurations of deposition, etching, annealing, and curing chambers for dielectric films.

[0029] Figure 2A A cross-sectional view of an exemplary processing chamber system 200 is shown having a divided plasma generation region within the processing chamber. During film etching, such as titanium nitride, tantalum nitride, tungsten, silicon, polysilicon, silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbide, etc., process gas can flow into the first plasma region 215 through the gas inlet assembly 205. A remote plasma system unit 201 can optionally be included in the system and can process the first gas which then travels through the gas inlet assembly 205. The inlet assembly 205 can include two or more different gas supply passages, where the second passage can bypass the RPS 201, if included.

[0030] The cooling plate 203, faceplate 217, ion suppressor 223, showerhead 225, and substrate support 265 (with a substrate 255 disposed thereon) are shown and can include each of the above according to embodiments. The susceptor 265 can have heat exchange passages through which a heat exchange fluid flows to control the temperature of the substrate, which can be operated to heat and / or cool the substrate or wafer during processing operations. The wafer support disk of the susceptor 265, which can include aluminum, ceramic, or combinations thereof, can also be resistively heated in order to achieve relatively high temperatures, such as from up to or about 100 °C to greater than or about 1100 °C, using embedded resistive heater elements.

[0031] The faceplate 217 can be pyramidal, conical, or another similar structure in which a narrow top portion extends to a wide bottom portion. The faceplate 217 can additionally be flat as shown and include a plurality of through passages for distributing process gas. Depending on the use of the RPS 201, plasma generating gas and / or plasma excited species can pass through the plurality of holes in the faceplate 217, as Figure 2B shown, for more uniform delivery into the first plasma region 215.

[0032] An exemplary configuration can include gas inlet assembly 205 opening to a gas supply region 258 separated from first plasma region 215 by faceplate 217 to allow gas / species to flow into first plasma region 215 through holes in faceplate 217. The structural and operational features can be selected to prevent significant backflow of plasma from first plasma region 215 into supply region 258, gas inlet assembly 205, and fluid supply system 210. Faceplate 217 or the conductive top portion of the chamber and showerhead 225 are shown with insulating rings 220 between the features that allow an AC potential to be applied to faceplate 217 relative to showerhead 225 and / or ion suppressor 223. Insulating rings 220 can be located between faceplate 217 and showerhead 225 and / or ion suppressor 223 to enable a capacitively coupled plasma (CCP) to be formed in the first plasma region. A baffle (not shown) can additionally be located in first plasma region 215 or otherwise coupled with gas inlet assembly 205 to influence the flow of fluid through gas inlet assembly 205 into the region.

[0033] Ion suppressor 223 can include a plate or other geometry that defines a plurality of holes throughout the structure that are configured to suppress the migration of ionically charged species out of first plasma region 215 while allowing uncharged neutral or radical species to pass through ion suppressor 223 into an activation gas delivery region between the suppressor and the showerhead. In embodiments, ion suppressor 223 can include a perforated plate with various aperture configurations. These uncharged species can include highly reactive species that are transported through the holes along with a low reactivity carrier gas. As noted above, the migration of ion species through the holes can be reduced and in some cases completely suppressed. Controlling the amount of ion species that pass through ion suppressor 223 can advantageously provide enhanced control over the gas mixture in contact with the underlying wafer substrate, which in turn can enhance control over the deposition and / or etch characteristics of the gas mixture. For example, adjusting the ion concentration of the gas mixture can significantly alter its etch selectivity, such as SiNx:SiOx etch ratio, Si:SiOx etch ratio, etc. In alternative embodiments where deposition is performed, the balance of conformal and flowable type deposition of dielectric materials can also be altered.

[0034] The plurality of holes in the ion suppressor 223 can be configured to control the passage of activated gases (i.e., ion species, radical species, and / or neutral species) through the ion suppressor 223. For example, the aspect ratio of the holes, or the ratio of the diameter to the length of the holes, and / or the geometry of the holes can be controlled such that the flux of ionically charged species in the activated gases passing through the ion suppressor 223 is reduced. The holes in the ion suppressor 223 can include a conical portion facing the plasma excitation region 215 and a cylindrical portion facing the showerhead 225. The shape and size of the cylindrical portion can be designed to control the flux of ion species to the showerhead 225. An adjustable electrical bias can also be applied to the ion suppressor 223 as an additional means of controlling the flow of ion species through the suppressor.

[0035] The ion suppressor 223 can be used to reduce or eliminate the amount of ionically charged species traveling from the plasma generation region to the substrate. The uncharged neutral and radical species can still pass through the openings in the ion suppressor and react with the substrate. It should be noted that in embodiments, the ionically charged species in the reaction region around the substrate can not be completely eliminated. In some cases, it is desirable for ion species to reach the substrate to perform etching and / or deposition processes. In these cases, the ion suppressor can help control the ion species concentration in the reaction region to a level that is conducive to the processes.

[0036] The showerhead 225 in combination with the ion suppressor 223 can allow the plasma present in the first plasma region 215 to avoid directly exciting the gas in the substrate processing region 233 while still allowing excited species to travel from the chamber plasma region 215 into the substrate processing region 233. In this manner, the chamber can be configured to prevent the plasma from contacting the substrate 255 being etched. This can advantageously protect various complex structures and films patterned on the substrate that can be damaged, misaligned, or distorted if directly contacted by the generated plasma. In addition, the rate of oxide species etching can increase when the plasma is allowed to contact or approach the substrate level. Thus, if the exposed region of material is an oxide, the material can be further protected by maintaining the plasma away from the substrate.

[0037] The processing system may further include a power supply 240 electrically coupled to the processing chamber to provide power to the panel 217, ion suppressor 223, nozzle 225, and / or base 265, thereby generating plasma in the first plasma region 215 or processing region 233. The power supply may be configured to deliver an adjustable amount of power to the chamber depending on the process being performed. This configuration allows for the use of tunable plasma in the process being performed. Unlike remote plasma units that typically have an on / off function, tunable plasma can be configured to deliver a specific amount of power to plasma region 215. This, in turn, allows for the formation of specific plasma characteristics, enabling precursors to dissociate in a specific manner to enhance the etch profile produced by these precursors.

[0038] Plasma can be ignited in the chamber plasma region 215 above nozzle 225 or in the substrate processing region 233 below nozzle 225. In an embodiment, the plasma formed in the substrate processing region 233 can be a DC-biased plasma, which is formed using a base acting as an electrode. Plasma can be present in the chamber plasma region 215 to generate radical precursors from inflows such as fluorine-containing precursors or other precursors. An AC voltage, typically in the radio frequency range, can be applied between a conductive top portion of the processing chamber (such as panel 217) and nozzle 225 and / or ion suppressor 223 to ignite the plasma in the chamber plasma region 215 during deposition. An RF power supply can generate a high radio frequency of 13.56 MHz, but other frequencies can also be generated alone or in combination with a 13.56 MHz frequency.

[0039] Figure 2B A detailed view 253 shows characteristics affecting the distribution of process gases through panel 217. (See diagram 253.) Figure 2A and Figure 2B As shown, panel 217, cooling plate 203, and gas inlet assembly 205 intersect to define gas supply region 258, into which process gas can be delivered from gas inlet 205. Gas can fill gas supply region 258 and flow through orifice 259 in panel 217 to first plasma region 215. Orifice 259 can be configured to guide flow in a substantially unidirectional manner, allowing process gas to flow into processing region 233, but partially or completely preventing backflow into gas supply region 258 after crossing panel 217.

[0040] Gas distribution components (such as nozzle 225) used in the processing chamber section 200 may be referred to as dual-channel nozzles, and Figure 3The embodiments are otherwise described in additional detail. The dual channel showerhead can provide an etching process that allows for separation of etchant outside of the processing region 233 to provide limited interaction with chamber components and with each other prior to delivery into the processing region.

[0041] The showerhead 225 can include an upper plate 214 and a lower plate 216. The plates can be coupled to each other to define a volume 218 between the plates. The coupling of the plates can be used to provide a first fluid passage 219 through the upper and lower plates, and a second fluid passage 221 through the lower plate 216. The resulting passages can be configured to provide fluid access from the volume 218 through the lower plate 216 via the second fluid passage 221 alone, and the first fluid passage 219 can be fluidically isolated from the volume 218 between the plates and the second fluid passage 221. Fluid access to and from the volume 218 can be through one side of the gas distribution assembly 225.

[0042] Figure 3 A bottom view of a showerhead 325 for a processing chamber according to embodiments. The showerhead 325 can correspond to the showerhead 225 shown. Figure 2A The through-holes 365 showing the view of the first fluid passage 219 can have a variety of shapes and configurations in order to control and influence the flow of precursors through the showerhead 225. The small holes 375 showing the view of the second fluid passage 221 can be substantially uniformly distributed over the surface of the showerhead, even between the through-holes 365, and can help to provide a more uniform mixture of precursors as they exit the showerhead than other configurations.

[0043] Figure 4 A schematic partial cross-sectional view of an exemplary substrate support assembly 400 according to some embodiments of the present technology is shown. The substrate support assembly 400 can be similar to the substrate support or susceptor 265 discussed above, and can include some or all of the features of this structure discussed above. The illustration can show an edge region of the structure. As shown, the substrate support assembly 400 can include a top puck 405, a cooling plate 420, and a back plate 430. The back plate 430 can extend from a susceptor stem as described above, and can provide additional passages to deliver fluids and / or electrical connections to various components of the substrate support assembly. For example, the back plate 430 can be coupled with the top puck 405 at an outer region of the top puck 405, and can create a volume between the top puck 405 and the back plate 430, and the cooling plate can be housed within this volume. This internal volume can be maintained at a higher pressure, such as up to atmospheric conditions, and thus the back plate 430 can define passages 432 in which O-rings can be located for sealing the components relative to the external vacuum environment.

[0044] The top puck 405 can be characterized by a first surface 406 and a second surface 407 opposite the first surface, and a recess can be defined from the first and second surfaces to accommodate a cooling plate 420, as shown. Thus, when coupled together, the cooling plate can be coupled proximate the second surface of the top puck. In some embodiments, gaps as shown can be incorporated between components, which can facilitate temperature control and provide thermal isolation between components. The top puck 405 can define one or more thermal isolations 408, 409 within the top puck 405, which can at least partially define one or more channels that can provide a plurality of temperature zones on the top puck and a substrate supported thereon. The top puck 405 can define any number of thermal isolations within the top puck 405, and in embodiments can include at least or about 2, at least or about 3, at least or about 4, at least or about 5, at least or about 6, at least or about 7, at least or about 8, at least or about 9, at least or about 10 or more. In some embodiments, such as shown in the substrate support assembly 400, the top puck 405 can define one or two thermal isolations. The first thermal isolation 408 can be defined within the first surface 406 of the top puck 405, and can be characterized by a depth through the top puck 405.

[0045] The first thermal isolation 408 can be defined radially about the top puck 405, and in embodiments can be configured to at least partially divide the top puck 405 into an inner region and an outer region. The first thermal isolation 408 can be or include a groove defined about the top puck 405 along an inner radius of the top puck. In embodiments, the depth of the first thermal isolation 408 can be greater than half the thickness of the top puck 405, and can be greater than or about 60% of the thickness of the top puck 405, greater than or about 70%, greater than or about 80%, greater than or about 90%, or equal to or about 100%. In the case that the groove completely bisects the top puck 405, the inner and outer regions can be two separate components that are individually coupled with the back plate 430. In embodiments, the first thermal isolation 408 can be configured to thermally isolate the inner region and the outer region. Such isolation can allow the inner region and the outer region to be individually heated or cooled during operation.

[0046] The thermal break can include multiple breaks, including a second thermal break 409, which can be defined in a second surface 407 of the top puck 405, or in a surface opposite the top surface or first surface 406. The second thermal break 409 can be defined at a second inner radius of the top puck 405, which can be radially inward as shown or radially outward from the first thermal break 408. The second thermal break 409 can be characterized by a second depth through the top puck 405, which can be greater than, equal to, or less than the first depth of the first thermal break 408. For example, as shown, the second thermal break 409 can be characterized by a depth that is greater than the depth of the first thermal break 408. Either or both of the first thermal break 408 and the second thermal break 409 can extend continuously or discontinuously around the top puck 405. For example, the first thermal break 408 can extend substantially continuously around the top puck 405, but can have one or more connections, such as an extension across a minimum thickness of a bottom region of the first thermal break 408, to couple an inner region of the top puck 405 to an outer region, which can allow for a unitary design of the top puck 405. The second thermal break 490 can also be a continuous channel around the top puck, or can have portions around the groove radius where the groove is not formed through the top puck 405.

[0047] An advantage of multiple thermal breaks is that a thermal break defined from the top surface and a thermal break defined from the bottom surface can help to reduce cross-talk between the two regions, which can allow for more fine-tuned temperature regulation between the regions. The top puck 405 can be composed of any number of materials, and in embodiments, can be or include an aluminum material. The top puck 405 can be any type of aluminum, including coated aluminum or anodized aluminum. For example, in embodiments, the top puck 405 can be aluminum coated with nickel or titanium, which can protect the top puck 405 from being etched.

[0048] Further, within the second surface of the top puck 405, one or more channels or grooves can be formed to house the first heater 410. Any type of heater can be incorporated into embodiments of the present technology. For example, a coil heater can be located in a channel defined around the top puck in a spiral or other pattern, which can provide more uniform heating of the top puck, and can be maintained within the channel with a cover plate as shown. A second heater 412 can also be incorporated in the outer region of the top puck, and relative to the inner region controlled by the first heater 410, the second heater 412 can provide additional temperature control in the outer region of the substrate, and be separated by a thermal break as discussed above.

[0049] In embodiments, the heater 410 and / or the heater 412 can include any type of resistive or fluidic heater. The first heater 410 and the second heater 412 can be independently operable from one another and can be capable of adjusting the temperature of the entire top platen 405 and a substrate positioned on the top platen 405. Each heater can have an operating temperature range of more than or about 25 °C, and each heater can be configured to heat more than or about 50 °C, more than or about 60 °C, more than or about 70 °C, more than or about 80 °C, more than or about 90 °C, more than or about 100 °C, more than or about 125 °C, more than or about 150 °C, more than or about 175 °C, more than or about 200 °C, more than or about 250 °C, more than or about 300 °C, more than or about 350 °C, more than or about 400 °C, more than or about 500 °C, more than or about 600 °C, more than or about 700 °C, or higher. The heaters can also be configured to operate within any range encompassing any two of these recited values, or within a smaller range encompassing any of these ranges.

[0050] The first heater 410 and the second heater 412 can also be configured to operate within a temperature range of one another and configured to maintain a particular temperature across the surface of the top platen 405 or a substrate positioned on the top platen 405. For example, the first heater 410 can be configured to operate to maintain the inner region at a first temperature, and the second heater 412 can be configured to operate to maintain the outer region at a second temperature similar to or different from the first temperature. Each temperature of a heater or region can be any temperature recited or encompassed above, which can allow the two heaters to operate with a difference of tens or hundreds of degrees. Further, in embodiments, the difference between the operating temperatures of the two heaters, or the difference between the maintained temperatures of the inner and outer regions, can be less than 10 °C. In embodiments, the temperature difference between the two heaters or maintained by the two regions can also be less than or about 5 °C, less than or about 4 °C, less than or about 3 °C, less than or about 2 °C, less than or about 1 °C, less than or about 0.9 °C, less than or about 0.8 °C, less than or about 0.7 °C, less than or about 0.6 °C, less than or about 0.5 °C, less than or about 0.4 °C, less than or about 0.3 °C, less than or about 0.2 °C, less than or about 0.1 °C, or less. By allowing such a small temperature difference between the two regions, temperature fluctuations due to precursor flow across a substrate, interference from other chamber components, reactions or operations that occur in one region but not another based on the manufacturing step, and other sources of fluctuation can be controlled or overcome during operation. This can allow for improved uniformity across all regions and all processed substrates compared to conventional techniques.

[0051] The cooling plate 420 can define one or more channels 425 within the cooling plate 420. The channels 425 can be configured to distribute one or more temperature controlled fluids around the cooling plate 420. The channels 425 can be accessed from a central port of the center or interior region of the cooling plate, which can be accessed from the stem of the substrate support assembly. Cooling fluid can be delivered up the stem and into the central port, which can then allow the fluid to flow around the channels 425. The channels 425 can be any number of geometric patterns, such as a spiral or coil, as well as substantially concentric circles around the cooling plate 420. The patterns can extend to the outside of the cooling plate, then back to an exit port, which can also be located in the central region of the cooling plate, and can provide access to additional channels or couplings within the stem of the pedestal to allow the fluid to return to a heat exchanger or other means for cooling and recirculation. As shown, the cooling plate 420 can not extend completely to the recessed portion of the top disk 405, and can maintain a gap or volume between the components, which can limit or prevent excessive thermal communication between the cooling plate 420 and the top disk 405.

[0052] The top disk 405 can define one or more recessed flanges 415 around the outer diameter of the top disk 405. The recessed flanges 415 can extend or drop down toward the edge of the top disk 405, which can be characterized by an outer diameter similar to or equal to the outer diameter of the back plate 430. In some embodiments of the technology, the recessed flanges 415 can be defined by a recessed portion of the top disk 405 that extends down to the edge of the top disk 405, which can be characterized by an outer diameter similar to or equal to the outer diameter of the back plate 430. Figure 4 Two recessed flanges 415 are shown in the middle, but the top disk 405 can define any number of recessed flanges in embodiments of the technology. As shown, a first recessed flange 415a and a second recessed flange 415b are defined in the top disk 405, and the second recessed flange 415b can extend to the outer edge of the top disk 405 as a separate recess extending from the first recessed flange 415a. The recessed flanges can extend from any radius along the top disk, and in some embodiments as shown, the first recessed flange 415a can extend less than the radius of a substrate positioned on the top disk. As shown, a substrate 435 can be positioned on the first surface 406 of the top disk, and can extend a radial distance along the top disk that extends past the recessed edge of the recessed flange 415a. As will be further explained below, in some embodiments of the technology, this can allow an edge ring to extend under the substrate.

[0053] One or more components can be located on the recessed flange 415. For example, in some embodiments, an edge ring heater 440 can be located on one of the recessed flanges, such as the recessed flange 415b shown. The edge ring heater 440 can be annular and can extend around the top puck. In some embodiments, the edge ring heater 440 can be characterized by an annular thickness that is less than or about equal to the lateral length of the recessed flange on which it is located. Thus, in some embodiments, the edge ring heater 440 can be maintained radially offset from the inner wall 416 of the top puck, which bounds the recessed flange 415b, which can reduce or limit heat conduction from the heater to the top puck. As described below, the edge ring heater 440 can also include or bound one or more standoffs, further limiting contact between the edge ring heater and the top puck. The heater 440 can include a body 442 that bounds an interior volume or channel 444 extending around the heater, and can house a heating element 446 that can extend around the heater to provide uniform heating from the heater. The heating element 446 can be a coil as shown, which can extend any number of turns around the heater, including one turn, two turns, three turns, or more, but can include any other type of heating element according to embodiments of the present technology.

[0054] A cover 448 can be sealed, brazed, welded, or otherwise coupled with the body 442, and can seal the heater volume in some embodiments. In some embodiments, the heating element 446 can be in contact with the cover 448 around the heater, which can help direct heat upward to the edge ring. Further, in some embodiments, the heating element 446 can not contact the body 442 to further limit heat transfer to the top puck. The heating element 446 can extend through a hole defined through the top puck 405 as shown, and can extend to a volume bounded by the back plate 430, where the element can extend to the base stem, from which electrical connections can extend from the chamber. Additionally, a connector can extend through the base stem, back plate, and top puck, where the connector can be electrically coupled with the heating element 446. Embodiments of the present technology can encompass any other type of coupling. As described above, the edge ring heater 440 can include one or more standoffs that can contact the recessed flange 415b to limit contact with the top puck. One such standoff can be coupled with or bound at the location where the heating element 446 or connector can extend through the heater and top puck. As shown, an annular protrusion can extend around the access or hole through the top puck 405. The protrusion or standoff can bound a channel 449 in which an O-ring, gasket, or elastomeric element can be located, and which can seal the connection from the vacuum environment in the process chamber.

[0055] As shown, the edge ring heater 440 can be located on the outermost recessed flange, such as recessed flange 415b, and can extend vertically beyond the inner recessed flange, such as recessed flange 415a. As shown, in some embodiments, the heater can not extend vertically beyond the first surface 406 of the top puck. Along the inner edge, such as the inner annular edge, the edge ring heater 440 can define a recessed flange 447, which can be aligned with the first recessed flange 415a of the top puck. This can define a channel between the recessed flange of the heater and the inner recessed flange of the top puck, and the channel can extend around the substrate support.

[0056] In some embodiments, the substrate support assembly can also include an edge ring 450. As shown, the edge ring 450 can be located on the edge ring heater 440. The edge ring can extend around the top puck 405, but in some embodiments, the edge ring can remain out of contact with the top puck, and can not contact the top puck at any location of the edge ring. The edge ring 450 can be a similar material to the top puck 405 or a different material, and in embodiments, the edge ring 450 can include nickel plated aluminum or aluminum plated or coated with other materials, which can limit corrosion of the edge ring 520 during etch operations with, for example, halogen containing precursors. The coating can include a metal or alloy, such as including nickel, platinum, or any other metal or transition metal. Further, the coating can include any number of oxide or nitride materials, such as yttrium oxide, aluminum oxide, or any other material that can limit the impact on the underlying aluminum, or can affect the processing conditions to control etching, plasma generation, or chamber component degradation. Further, the edge ring 450 can be only partially nickel plated, as will be further explained below, such as the inner surface of the edge ring, including the shoulder as described below, can be aluminum exposed from beneath the nickel plated layer. Because nickel can affect etching, and since etching materials can stop at locations proximate to nickel due to the affinity of the etching material for nickel, by exposing aluminum along areas proximate to the substrate, edge etching or processing can be performed.

[0057] The edge ring 450 can extend around the top puck along the recessed flange 415 and in embodiments can extend vertically above the top puck 405 so as to extend vertically above the top surface or first surface 406 of the top puck 405, such as at an outer radius of the edge ring. The edge ring 450 can feature an inner edge that can be angled from an outer edge below the first surface 406 of the top puck 405 at a shoulder 452 of the edge ring. As shown, the shoulder 452 can extend within a channel formed between the inner recessed flange of the edge ring heater and the recessed flange 415a of the top puck. The shoulder 452 extending to an inner edge, such as an inner annular wall of the edge ring, can extend to a position that is vertically recessed from the first surface 406 of the top puck 405. Further, the inner annular wall of the edge ring can extend to an inner radius that is beyond an outer radial edge of a substrate, such as the substrate 435 as shown.

[0058] Accordingly, the edge ring 450 can extend just below a substrate being processed without contacting the substrate. Because the edge ring can be independently heated by the edge ring heater 440, temperature tuning of the edge of the substrate can be performed. Accordingly, the effect or impact of the edge ring on plasma processing at the edge of the substrate can be reduced or eliminated and more uniform processing can be performed. Accordingly, substrate support according to some embodiments of the present technology can provide three independently temperature controlled regions. Further, because the edge ring heater can have minimal contact with the top puck and because the edge ring can not contact the top puck, an increased temperature differential can be created between the edge region of the substrate and other regions, which can allow for additional control to improve uniformity of processing on the substrate.

[0059] The edge ring 450 can be characterized by an outer diameter that is equal to or similar to the outer diameter of the top puck 405, such that in some embodiments the edge ring 450 can not extend beyond the outer radius of the top puck 405. Further, in some embodiments the edge ring 450 can include an optional skirt 454, as contoured, which can be part of a one-piece edge ring, and which can extend perpendicularly from the edge ring. The skirt can extend partially away from the heater 440, and can not contact the heater as it extends past the outer edge of the heater. The skirt can extend perpendicularly past the heater and the recessed ledge 415b, which can protect the gap between the components from plasma or other process effluents flowing between the components. As noted above, the edge ring 450 can not contact the top puck 405, which can ensure a continuous spacing between each surface of the top puck 405, including the recessed ledge 415, and the edge ring 450. Purge gas can flow through the holes through the top puck 405 and extending through the recessed ledge 415, which can allow for continuous purging from around the edge ring 450 and edge ring heater 440. In some embodiments, the edge ring 450 can allow for an amount of precursor flow from the outside edge of the chamber to be blocked, to prevent or limit additional etching, deposition, or processing of the edge region of the substrate.

[0060] Figure 5A A schematic top isometric view of an exemplary edge ring heater is shown, in accordance with some embodiments of the present technology, and can show additional aspects of the edge ring heater 440. As shown, the edge ring heater 440 can include a main body 442 and a lid 448, which extends around the heater to seal an interior volume in which the heating elements can be disposed, but the heating elements 446 can extend from the heater main body at standoff locations as described above. The heater main body 442 can also include a number of protrusions 502, which can allow the heater to be bolted to the top puck while limiting contact with the top puck, as will be described further below. Figure 5B A schematic bottom isometric view of an exemplary edge ring heater is shown, in accordance with some embodiments of the present technology, and can also show additional aspects of the edge ring heater 440. As described above, the heating elements 446 or connectors can extend through the heater main body at standoffs 505 of the heater main body. The heater main body can include or define one, two, three, or more standoffs 505, but increasing the number of standoffs can increase the contact with the top puck, which can increase the heat transfer between the components.

[0061] The standoffs 505a can be part of the body 442 and can be grommet defined channels to seal the inlets and outlets of the heating elements described above. As shown, the standoffs 505b can be positioned at regular or irregular intervals, which can provide two, three, or more points of contact with the standoffs 505a. The standoffs 505b can be an insulating material such as PEEK or some other material that can withstand the chamber environment. In some embodiments, all of the standoffs 505 can be the same material to increase thermal transfer uniformity and can be coupled with the body such as the standoffs 505b or can be defined by the edge ring heater body 442 such as the standoffs 505a.

[0062] Figure 6 A schematic partial cross-sectional view of an exemplary substrate support assembly is shown in accordance with some embodiments of the present technology and can show additional views of the substrate support assembly 400 described above and can show an exemplary coupling between the edge ring and the top puck. As shown, the top puck 405 can define one or more grooves to accommodate the protrusions 502 of the heater 440. As shown, the protrusions can define grooves to accommodate bolts or other coupling material that can extend through the top puck 405 to engage components. As shown, the bolts or couplings can be sized to maintain a gap 602 between the protrusions 502 and the top puck 405. For example, in addition to standoffs as described previously, the grooves can define a lock or stop in the heater that can ensure the heater is maintained away from the top puck. By incorporating an edge ring and an edge ring heater, substrate edge temperature regulation can be performed in accordance with some embodiments of the present technology, which can improve process uniformity across the substrate. For example, in operation, the edge ring heater can be set or can maintain the edge ring at any of the temperatures described above, which can be similar to or different than either or both of the heaters in the top puck, which can allow for three temperature control zones. Because the edge ring can be maintained out of contact with the top puck, the temperature differential between the edge of the substrate and the interior and / or exterior regions of the substrate can be maintained at greater than or about 5°C and can be maintained at greater than or about 10°C, greater than or about 20°C, greater than or about 30°C, greater than or about 40°C, greater than or about 50°C, or higher. Thus, any edge effects resulting from processing can be mitigated or prevented.

[0063] As described previously, in some embodiments, the edge ring can be plated, such as nickel-based aluminum or other plating material, including any of the plating materials mentioned previously. The plating can be a material that is characterized by a higher affinity with halogen radical materials and / or any material that can protect the underlying material. Figures 7A to 7C An exemplary partial cross-section of an edge ring is shown, which can include any of the materials or aspects described previously. The edge ring can show plating examples encompassed by the present technology and can be included on any edge ring and within any of the assemblies or systems described previously. By adjusting the amount of plating, improved edge profiles can be obtained in accordance with some embodiments.

[0064] For example, Figure 7A A full-coated edge ring 705 according to some embodiments of the present technology can be shown. The coating 707 can be nickel or any other metal, including transition metals as well as alloys. By including a coating, tuning of the plasma process can be provided. For example, fluorine or other halogens are characterized by a higher affinity for nickel than for other materials, including aluminum. Thus, during processing, nickel can draw fluorine or other halogen radical species from the edge of the substrate being processed toward the edge ring. For processes where an increase in edge etching can occur, such a coating can reduce edge effects, improving uniformity.

[0065] However, in some embodiments, depending on the proximity of the nickel to the substrate, the nickel can substantially eliminate edge etching. Thus, in some embodiments, a portion of the nickel can be removed or not formed, which can expose the underlying aluminum or other material. Figure 7B An example edge ring 710 is shown, which can have a partial coating 712. Some or all of the shoulder of the edge ring that can be closest to the substrate can be removed or not plated. The exposed aluminum can allow more etchant material to interact with the substrate, and can allow edge etching to occur.

[0066] Figure 7C An example edge ring 715 is shown, which can have a partial coating 717, which can be a reduced coating compared to the coating shown. Figure 7B It should be understood that any amount of coating can be included, which can expose any amount of the edge ring. As shown, the coating can be limited to the outer edge region of the edge ring, as shown, which can limit any interaction with the substrate while achieving protection of the outer edge of the edge ring. Further, in some embodiments, no coating can be included along the backside of the edge ring, which can be in contact with the heater. Because the heater housing can also be aluminum, removing the coating can ensure similar expansion of the materials during heating, which can ensure that the edge ring maintains constant contact with the heater and does not move position. By including an amount of plating, the edge ring can be better protected from plasma effluents, but by exposing at least a portion of the underlying aluminum, edge etching can be maintained on the substrate.

[0067] In the foregoing description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various embodiments of the present technology. It can be apparent, however, to one skilled in the art that certain embodiments can be practiced without some or all of these specific details, or with additional details.

[0068] Having disclosed several embodiments, those skilled in the art will recognize, in light of the disclosure herein, that many changes can be made within the spirit and scope of the embodiments and will have the benefit of the technology. In addition, although the technology has been described herein with reference to specific embodiments, the description is not intended to be construed in a limiting sense. Rather, numerous other variations and modifications will become apparent to those skilled in the art upon review of the disclosure. Accordingly, the technology should be understood to include all alternatives, modifications and equivalents falling within the scope of the claims together with their full scope of equivalents.

[0069] Where a range of values is provided, it is understood that each intervening value, to the minimum resolvable between the upper and lower limits, is also specifically disclosed. Any narrower range or value is expressly included within the scope of the technology. All specified numerical values can contain certain amounts of uncertainty necessarily resulting from the standard deviation found in their respective testing measurements. When certain ranges or values from the specified ranges are of interest, then either the higher or lower limit of the range will be specifically referenced in the disclosure. It is specifically stated that any number in the list of values ranging from the lower toward the upper limit are expressly disclosed. Any numbered list of values when expressed to the nearest whole number contains all values between and including that number and the number immediately following it. Any numerical range is intended to include all corresponding numerical sub-ranges. At the very least, each minimum value will also be explicitly disclosed, and each maximum value will also be explicitly disclosed, so that a stated range of, for example, A-Z will comply with the example using a minimum A specifically disclosed, and a maximum Z specifically disclosed.

[0070] As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural reference unless the context clearly dictates otherwise. Thus, for example, reference to "a layer" includes a plurality of such layers, and reference to "the precursor" includes reference to one or more precursors known to one of ordinary skill in the art, and equivalents thereof, and so forth.

[0071] Further, the words "comprise(s)," "comprising," "contain(s)," "containing," "include(s)," and "including," when used in this specification and in the following claims, are intended to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.

Claims

1. A substrate support assembly, comprising: A top disk, characterized by a first surface and a second surface opposite to the first surface, wherein the top disk defines a recessed flange at the outer edge of the first surface of the top disk; A cooling plate, the cooling plate being adjacent to the second surface of the top disk and coupled to the top disk; A back plate, the back plate being coupled to the top disk around the outside of the top disk, wherein the back plate at least partially defines a volume together with the top disk, and wherein the cooling plate is housed within the volume; A heater, wherein the heater is disposed on the recessed flange of the top disk, wherein: The heater defines an internal volume, and the heating element extends within the internal volume; and The heating element extends through the top disk into the heater; and An edge ring is located on the heater and extends around the top disk, wherein the edge ring remains not in contact with the top disk.

2. The substrate support assembly of claim 1, wherein the top disk defines a thermal barrier between an inner region and an outer region of the top disk, and wherein the thermal barrier includes a groove defined around an inner radius of the top disk.

3. The substrate support assembly of claim 2, wherein the thermal barrier includes a first groove defined around an inner radius of the top disk at the first surface of the top disk, and a second groove defined around a second inner radius of the top disk at the second surface of the top disk opposite to the first surface.

4. The substrate support assembly of claim 1, wherein the edge ring extends vertically at its outer radius above the first surface of the top disk.

5. The substrate support assembly of claim 4, wherein the edge ring is recessed at its inner radius below the first surface of the top disk.

6. The substrate support assembly of claim 1, wherein the edge ring is characterized in that its outer diameter is equal to the outer diameter of the top disk.

7. The substrate support assembly of claim 1, wherein the edge ring includes a skirt extending beyond the outer edge of the heater.

8. The substrate support assembly of claim 1, wherein the heater contacts the top disk at two or more supports, wherein one of the two or more supports defines an inlet / outlet for the heating element to extend into the heater, and wherein the one of the two or more supports defines a channel around the inlet / outlet, the heater further comprising: A gasket, the gasket being located within the channel surrounding the inlet / outlet.

9. The substrate support assembly of claim 1, wherein the top disk comprises aluminum or ceramic, and wherein the edge ring comprises nickel plated at least partially on the edge ring.

10. A substrate support assembly, comprising: A top disk, characterized by a first surface and a second surface opposite to the first surface, wherein the top disk defines a recessed flange at the outer edge of the first surface of the top disk; A heater, the heater being disposed on the recessed flange of the top disk; Multiple heat-insulating supports are located between the heater and the top disk, and separate the heater and the top disk. as well as An edge ring is located on the heater and extends around the top disk, wherein the edge ring remains not in contact with the top disk.

11. The substrate support assembly of claim 10, wherein the top disk defines a plurality of recessed flanges at the outer edge of the first surface of the top disk.

12. The substrate support assembly of claim 11, wherein the heater is located on the outermost recessed flange of the plurality of recessed flanges, and wherein the heater extends vertically beyond the inner recessed flange of the plurality of recessed flanges.

13. The substrate support assembly of claim 12, wherein the heater defines a recessed flange at the inner edge of the heater, and wherein a channel is formed between the recessed flange of the heater and the inner recessed flange of the plurality of recessed flanges of the top disk.

14. The substrate support assembly of claim 13, wherein the edge ring extends within the channel, and wherein the inner edge of the edge ring is configured to be perpendicularly recessed from the first surface of the top disk.

15. The substrate support assembly of claim 10, wherein the heater defines an internal volume and the heating element extends within the internal volume.

16. The substrate support assembly of claim 15, wherein the heater comprises: The main body, which defines an internal volume, and the heating element extending within the internal volume, and A cover, which is coupled to the body, wherein the heating element is in direct contact with the cover around the heater.

17. A substrate support assembly, comprising: A top disk, characterized by a first surface and a second surface opposite to the first surface, wherein the top disk defines a recessed flange at the outer edge of the first surface of the top disk; A heater, wherein the heater is disposed on the recessed flange of the top disk, wherein the heater comprises: The main body defines an internal volume, and the heating element extends within the internal volume. A cover, coupled to the body, wherein the heating element is in direct contact with the cover around the heater; as well as An edge ring is located on the heater and extends around the top disk, wherein the edge ring remains not in contact with the top disk.

18. The substrate support assembly of claim 17, wherein the heater contacts the top disk at a distance of two or more supports from the heater, wherein one of the two or more supports defines an inlet / outlet for the heating element to extend into the heater, and wherein the one of the two or more supports defines a channel around the inlet / outlet, the heater further comprising: A gasket, the gasket being located within the channel surrounding the inlet / outlet.

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