Polishing pad and method of fabricating semiconductor devices using the same

Abstract

Provided are a polishing pad having a structural characteristic capable of maximizing a water leakage prevention effect and a method of manufacturing a semiconductor device using the same, including: a polishing layer including a first surface as a polishing surface and a second surface as a back surface thereof, and including a first through-hole penetrating from the first surface to the second surface, a window disposed in the first through-hole, and a support layer disposed on the second surface side of the polishing layer, including a third surface on the polishing layer side and a fourth surface as a back surface thereof, and including a second through-hole penetrating from the third surface to the fourth surface and connected to the first through-hole; the second through-hole is smaller than the first through-hole, a lowermost end surface of the window is supported by the third surface, a first adhesive layer is included between the lowermost end surface of the window and the third surface; a second adhesive layer is included between the second surface and the third surface and between the lowermost end surface of the window and the third surface; and the support layer includes a compression portion in a region corresponding to the lowermost end surface of the window.

Description

Technical Field

[0001] This invention relates to a polishing pad used as part of a chemical mechanical planarization process for a semiconductor substrate, and a method for fabricating a semiconductor device using the polishing pad. Background Technology

[0002] Chemical mechanical planarization (CMP) or chemical mechanical polishing (CMP) processes can be used for various purposes in a variety of fields. CMP processes are performed on a specified surface of the object to be polished and can be used to planarize the surface, remove aggregated materials, resolve lattice damage, and remove scratches and contaminants, among other things.

[0003] CMP (Chemical Motion Processing) technology in semiconductor manufacturing can be classified according to the material of the polished film or the shape of the polished surface. For example, it can be classified by the material of the polished film as single-crystal silicon or polysilicon, or by the type of impurities as various oxide films or metal films such as tungsten (W), copper (Cu), aluminum (Al), ruthenium (Ru), and tantalum (Ta). Furthermore, it can be classified according to the shape of the polished surface as processes for improving substrate surface roughness, processes for planarizing height differences caused by multilayer circuit wiring, and device separation processes for selectively forming circuit wiring after polishing.

[0004] CMP (Chemical Motion Processing) can be applied multiple times during the fabrication of semiconductor devices. Semiconductor devices consist of multiple layers, each containing complex and intricate circuit patterns. Furthermore, in recent semiconductor devices, the size of individual chips has decreased, and the patterns of each layer have evolved towards greater complexity and finer detail. Therefore, the purpose of CMP in semiconductor device fabrication has expanded beyond just planarizing circuit traces to include separating circuit traces and improving trace surfaces, resulting in demands for more precise and reliable CMP performance.

[0005] The polishing pad used in CMP processes is a component used to process the surface to be polished to the desired level through friction. It can be considered one of the most important factors in terms of the uniformity of the thickness of the polished object, the flatness of the polished surface, and the polishing quality. Summary of the Invention

[0006] Technical problems to be solved

[0007] In one embodiment, a polishing pad is provided that minimizes a leak that is a path of permeation through an interface between a window for end point detection and the polishing pad, and that enables excellent long-term durability without water leakage even if it is applied to a polishing process for a substantially long time, as a polishing pad using a window.

[0008] In another embodiment, a method of manufacturing a semiconductor device is provided that further improves process efficiency by combining a specific structure of a window of the polishing pad with optimal process conditions related to a polishing process and that ensures excellent quality in terms of polishing rate, polishing flatness, and defect prevention, as a method of manufacturing a semiconductor device using the polishing pad.

[0009] Means for solving the problem

[0010] In one embodiment, a polishing pad is provided that includes a polishing layer including a first face as a polishing surface and a second face as a back surface thereof, and including a first through-hole penetrating from the first face to the second face, a window disposed within the first through-hole, and a support layer disposed on the second face side of the polishing layer, including a third face on the polishing layer side and a fourth face as a back surface thereof, and including a second through-hole penetrating from the third face to the fourth face and connected to the first through-hole; the second through-hole is smaller than the first through-hole, a lowermost end face of the window is supported by the third face, a first adhesive layer is included between the lowermost end face of the window and the third face; a second adhesive layer is included between the second face and the third face and between the lowermost end face of the window and the third face; the support layer includes a compression portion in a region corresponding to the lowermost end face of the window.

[0011] The first adhesive layer can include a moisture-cured resin, and the second adhesive layer can include a thermoplastic resin.

[0012] The first adhesive layer can not be disposed between a side surface of the first through-hole and a side surface of the window.

[0013] The first adhesive layer can be further disposed between a side surface of the first through-hole and a side surface of the window.

[0014] The support layer can include a non-compression portion in a region other than the compression portion, and a percentage of a thickness of the compression portion with respect to a thickness of the non-compression portion can be 0.01% to 80%.

[0015] The first face can include at least one groove, and a depth of the groove can be 100 μm to 1500 μm, and a width can be 0.1 mm to 20 mm.

[0016] The first face can include a plurality of grooves, which can include concentric circular grooves, a spacing between two adjacent grooves of the concentric circular grooves being 2 mm to 70 mm.

[0017] The lowermost end face of the window can include a recess.

[0018] The depth of the recess can be 0.1 mm to 2.5 mm.

[0019] The window can include a non-foamed cured product of a window composition including a first urethane-based prepolymer, and the polishing layer can include a foamed cured product of a polishing layer composition including a second urethane-based prepolymer.

[0020] The Shore D hardness of the first face measured in a dry state at room temperature can be less than the Shore D hardness of the uppermost end face of the window measured in a dry state at room temperature.

[0021] In another embodiment, a method of manufacturing a semiconductor device includes the steps of: providing a polishing pad having a polishing layer including a first face as a polishing face and a second face as a back face thereof, a first through-hole penetrating from the first face to the second face, and a window provided in the first through-hole; and polishing a polishing target having a polished face to be polished while rotating the polishing pad and the polishing target relative to each other under a pressurized condition after the polished face of the polishing target is brought into contact with the first face; the polishing target including a semiconductor substrate, the polishing pad further including a support layer provided on the second face side of the polishing layer, the support layer including a third face on the polishing layer side and a fourth face as a back face thereof, and including a second through-hole penetrating from the third face to the fourth face and connected to the first through-hole, the second through-hole being smaller than the first through-hole, a lowermost end face of the window being supported by the third face, a first adhesive layer being included between the lowermost end face of the window and the third face, a second adhesive layer being included between the second face and the third face and between the lowermost end face of the window and the third face, and the support layer including a compression portion in a region corresponding to the lowermost end face of the window.

[0022] The method of manufacturing a semiconductor device can further include the step of: supplying a polishing slurry to the first face; the polishing slurry being ejected onto the first face through a supply nozzle, a flow rate of the polishing slurry ejected through the supply nozzle being 10 ml / min to 1000 ml / min.

[0023] The polishing target and the polishing pad can be rotated at a speed of 10 rpm to 500 rpm, respectively.

[0024] In yet another embodiment, there is provided a polishing pad including: a polishing layer including a first surface as a polishing surface and a second surface as a back surface thereof, and including a first through-hole penetrating from the first surface to the second surface, a window provided in the first through-hole, and a support layer provided on the second surface side of the polishing layer, including a third surface on the polishing layer side and a fourth surface as a back surface thereof, and including a second through-hole penetrating from the third surface to the fourth surface and connected to the first through-hole; the second through-hole being smaller than the first through-hole, a lowermost end surface of the window being supported by the third surface, a first adhesive layer being included between the lowermost end surface of the window and the third surface; a second adhesive layer being included between the second surface and the third surface and between the lowermost end surface of the window and the third surface; the support layer including a compression portion in a region corresponding to the lowermost end surface of the window, the compression portion being a continuously compressed region formed integrally so as to include all portions corresponding to the lowermost end surface of the window.

[0025] In yet another embodiment, there is provided a method of manufacturing a semiconductor device, including: providing a polishing pad having a polishing layer including a first surface as a polishing surface and a second surface as a back surface thereof, including a first through-hole penetrating from the first surface to the second surface, and including a window provided in the first through-hole, and polishing a polishing target having a surface to be polished in contact with the first surface, while rotating the polishing pad and the polishing target relative to each other under a pressurized condition; the polishing target including a semiconductor substrate, the polishing pad further including a support layer provided on the second surface side of the polishing layer, the support layer including a third surface on the polishing layer side and a fourth surface as a back surface thereof, and including a second through-hole penetrating from the third surface to the fourth surface and connected to the first through-hole, the second through-hole being smaller than the first through-hole, a lowermost end surface of the window being supported by the third surface, a first adhesive layer being included between the lowermost end surface of the window and the third surface, a second adhesive layer being included between the second surface and the third surface and between the lowermost end surface of the window and the third surface, the support layer including a compression portion in a region corresponding to the lowermost end surface of the window, the compression portion being a continuously compressed region formed integrally so as to include all portions corresponding to the lowermost end surface of the window.

[0026] In still another embodiment, there is provided a polishing pad including: a polishing layer including a first surface as a polishing surface and a second surface as a back surface thereof, and including a first through-hole penetrating from the first surface to the second surface, a window provided in the first through-hole, and a support layer provided on the second surface side of the polishing layer, including a third surface on the polishing layer side and a fourth surface as a back surface thereof, and including a second through-hole penetrating from the third surface to the fourth surface and connected to the first through-hole; the second through-hole being smaller than the first through-hole, a lowermost end surface of the window being supported by the third surface, a first adhesive layer being included between the lowermost end surface of the window and the third surface; a second adhesive layer being included between the second surface and the third surface and between the lowermost end surface of the window and the third surface; the first adhesive layer and the second adhesive layer being sequentially provided in a direction from the lowermost end surface of the window toward the third surface, the first adhesive layer including a moisture-cured resin, the support layer including a compressed portion in a region corresponding to the lowermost end surface of the window, the compressed portion being a continuous compressed region integrally formed by pressing from the fourth surface side so as to include all portions corresponding to the lowermost end surface of the window, the compressed portion not including two or more compressed regions having different pressing directions during formation.

[0027] In still another embodiment, there is provided a method of manufacturing a semiconductor device, including: providing a polishing pad having a polishing layer including a first surface as a polishing surface and a second surface as a back surface thereof, including a first through-hole penetrating from the first surface to the second surface, and including a window provided in the first through-hole, and polishing a polishing target having a surface to be polished in contact with the first surface while rotating the polishing pad and the polishing target relative to each other under a pressing condition; the polishing target including a semiconductor substrate, the polishing pad further including a support layer provided on the second surface side of the polishing layer, the support layer including a third surface on the polishing layer side and a fourth surface as a back surface thereof, and including a second through-hole penetrating from the third surface to the fourth surface and connected to the first through-hole, the second through-hole being smaller than the first through-hole, a lowermost end surface of the window being supported by the third surface, a first adhesive layer being included between the lowermost end surface of the window and the third surface, a second adhesive layer being included between the second surface and the third surface and between the lowermost end surface of the window and the third surface, the first adhesive layer and the second adhesive layer being sequentially provided in a direction from the lowermost end surface of the window toward the third surface, the first adhesive layer including a moisture-cured resin, the support layer including a compressed portion in a region corresponding to the lowermost end surface of the window, the compressed portion being a continuous compressed region integrally formed by pressing from the fourth surface side so as to include all portions corresponding to the lowermost end surface of the window, the compressed portion not including two or more compressed regions having different pressing directions during formation.

[0028] Inventive Effects

[0029] The polishing pad minimizes leakage of a liquid component into the interface between the window and the polishing pad through the combination of the multi-stage adhesive layer structure and the compression portion structure, and can achieve excellent long-term durability without water leakage even if it is substantially long time applied to a polishing process.

[0030] In the semiconductor device manufacturing method, the specific structure of the window of the polishing pad is used in combination with optimal process conditions related to a polishing process to further improve process efficiency, and excellent quality is ensured in terms of polishing rate, polishing flatness, and defect prevention, etc. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1 is a plan view of a polishing pad of an embodiment.

[0032] Figure 2 is a sectional view of a polishing pad of an embodiment, schematically showing a cross section taken along X-X'. Figure 1

[0033] Figure 3 is a sectional view of a polishing pad of another embodiment, schematically showing a cross section.

[0034] Figure 4 is a schematic view showing a B portion of the Figure 2

[0035] Figure 5 is a schematic view showing an A portion of the Figure 2

[0036] Figure 6 is a cross section of yet another embodiment of a polishing pad, schematically showing a cross section.

[0037] Figure 7 is a schematic view of a gas leakage measurement process of the polishing pad.

[0038] Figure 8 is a schematic view of a semiconductor device manufacturing method of an embodiment, schematically showing a cross section.

[0039] Figures 9A to 9D is a sectional view of a polishing pad of each of Comparative Examples 1 to 4, schematically showing a cross section.

[0040] REFERENCE NUMERALS

[0041] 100, 100', 200: Polishing pad

[0042] 10: Polishing layer

[0043] 11: First surface, polishing surface

[0044] 12: Second surface​​​

[0045] 101: first through-hole

[0046] 102: window

[0047] 20: support layer

[0048] 21: third face

[0049] 22: fourth face

[0050] 201: second through-hole

[0051] 30: first adhesive layer

[0052] 40: second adhesive layer

[0053] 111: groove

[0054] 112: air hole

[0055] 113: fine concave portion

[0056] 103: recess

[0057] 300: holder

[0058] 120: platform

[0059] 130: semiconductor substrate

[0060] 140: supply nozzle

[0061] 150: polishing slurry

[0062] 160: polishing head

[0063] 170: dresser

[0064] 180: light source

[0065] CR: width of compression portion

[0066] NCR: non-compression portion

[0067] D1: thickness of polishing layer

[0068] D2: thickness of window

[0069] d1: depth of groove

[0070] d2: depth of recess

[0071] d3: first face-window uppermost end face height difference

[0072] L1: length of first adhesive layer

[0073] W2: width of portion of lowermost end face of window supported by third face

[0074] W3: width of the first adhesive layer

[0075] H1: thickness of the non-compressed portion

[0076] H2: thickness of the compressed portion

[0077] w1: width of the groove

[0078] p1: pitch of the groove DETAILED DESCRIPTION

[0079] The advantages, features and implementation methods of the present application will be more clearly understood from the following examples. However, the present application is not limited to the following exemplary embodiments, but can be implemented in various different forms, and these exemplary embodiments are provided only to make the present application more complete and to fully provide the scope of the present application to those skilled in the art to which the present application pertains, and the present application will be defined by the appended claims.

[0080] In order to clearly express each layer and region in the drawings, the thickness is exaggerated and shown. Also, in the drawings, the thickness of some layers and regions is exaggerated for convenience of explanation. Throughout the specification, the same reference numerals denote the same constituent elements.

[0081] Also, in the present specification, when a part of a layer, film, region, plate, or the like is referred to as being "on", "above", or "over" another part, this includes not only a case where the part is directly on, above, or over the other part, but also a case where another part is interposed therebetween. In contrast, when a part is referred to as being directly on, above, or over another part, it means that no other part is interposed therebetween. Meanwhile, when a part of a layer, film, region, plate, or the like is referred to as being "under" or "below" another part, this includes not only a case where the part is directly under or below the other part, but also a case where another part is interposed therebetween. In contrast, when a part is referred to as being directly under or below another part, it means that no other part is interposed therebetween.

[0082] In the present specification, the modifier "first" or "second" and the like is used to distinguish the case where the constituent is different from each other, and these modifiers do not mean that the constituents are specifically different types from each other.

[0083] Hereinafter, implementation examples according to the present application will be described in detail.

[0084] In one embodiment of the present application, a polishing pad is provided, including: a polishing layer including a first surface as a polishing surface and a second surface as a back surface thereof, and including a first through-hole passing through from the first surface to the second surface, a window provided in the first through-hole, and a support layer provided on the second surface side of the polishing layer, including a third surface on the polishing layer side and a fourth surface as a back surface thereof, and including a second through-hole passing through from the third surface to the fourth surface and connected to the first through-hole; the second through-hole is smaller than the first through-hole, a lowermost end surface of the window is supported by the third surface, a first adhesive layer is included between the lowermost end surface of the window and the third surface; a second adhesive layer is included between the second surface and the third surface and between the lowermost end surface of the window and the third surface; the support layer includes a compression portion in a region corresponding to the lowermost end surface of the window.

[0085] The polishing pad is one of raw materials and auxiliary materials necessary in a polishing process which requires planarization of a surface or the like, and is one of important process components in a semiconductor device manufacturing process. The polishing pad aims to planarize an uneven structure, and facilitates convenience of subsequent processing such as removal of surface defects. Although the polishing process is used in technical fields other than the semiconductor technical field, the precision of the polishing process required in the semiconductor manufacturing process is the highest compared to other technical fields. Recently, in view of the trend toward high integration and miniaturization of semiconductor devices and the like, the quality of the entire semiconductor device can be greatly deteriorated due to a slight error in the polishing process in the process of manufacturing the same. Therefore, for fine control of the polishing process, a polishing endpoint detection technique is introduced so that polishing is stopped when a semiconductor substrate is polished to a desired degree.

[0086] Figure 1 A plan view of a polishing pad 100 of one embodiment is schematically shown. Referring to Figure 1 , the polishing pad 100 can include a window 102. Specifically, the polishing pad 100 as a whole has light impermeability, or a window 102 having partial light permeability can be introduced to detect a change in film quality by an optical signal such as laser light, thereby determining an endpoint of polishing. Such a window 102 for endpoint detection is a component realized by a material and physical properties different from those of a basic material constituting the polishing layer of the polishing pad 100, and with its introduction, a portion having partial heterogeneity is generated on the polishing surface of the polishing layer. Since polishing of a semiconductor substrate is performed as a whole using the polishing surface of the polishing pad including the uppermost end surface of the window, minimizing the negative influence of the partial heterogeneity of the portion in which the window is introduced on the polishing of the semiconductor substrate is an important factor in determining the quality of the semiconductor device.

[0087] From this perspective, the polishing pad 100 according to one embodiment can be used as a process component capable of fabricating excellent semiconductor devices by ensuring the process advantages of the window 102 while minimizing negative factors caused by the local heterogeneity of the portion in which the window 102 is introduced, by applying specific structural features when the window 102 is introduced.

[0088] Figure 2 A cross-sectional view of the polishing pad 100 of one implementation example is schematically shown; more specifically, a cross-sectional view of the polishing pad 100 is schematically shown. Figure 1 The X-X' section. (Refer to...) Figure 2 The polishing pad 100 includes a polishing layer 10, which includes a first surface 11 as the polishing surface and a second surface 12 as its back surface. Additionally, the polishing layer 10 includes a first through-hole 101 extending from the first surface 11 to the second surface 12, and a window 102 is disposed within the first through-hole 101.

[0089] Additionally, the polishing pad 100 further includes a support layer 20 disposed on the second surface 12 side of the polishing layer 10. The support layer 20 includes a third surface 21 on the polishing layer 10 side and a fourth surface 22 serving as its back surface, and includes a second through-hole 201 extending from the third surface 21 to the fourth surface 22 and connected to the first through-hole 101. Since the second through-hole 201 is formed to connect with the first through-hole 101, the polishing pad 100 includes a light-pass extending through the entire thickness from the uppermost end surface to the lowermost end surface, thus allowing for the effective application of optical endpoint detection methods through the window 102.

[0090] In the polishing pad 100, the second through-hole 201 is smaller than the first through-hole 101, and the lowermost end surface of the window 102 can be supported by the third face 21. Since the second through-hole 201 is formed to be smaller than the first through-hole 101, a support surface capable of supporting the window 102 is formed on the third face 21. At this time, the first adhesive layer 30 is included between the lowermost end surface of the window and the third face 21. In addition, the second adhesive layer 40 is included between the second face 12 and the third face 21 and between the lowermost end surface of the window and the third face 21. Thus, the lowermost end surface of the window and the third face 21 include a multi-stage adhesive layer including the first adhesive layer 30 and the second adhesive layer 40, and the water leakage prevention effect can be greatly improved by such a multi-stage adhesive structure. Specifically, the polishing process using the polishing pad 100 is performed while supplying a fluid such as a liquid slurry to the polishing face 11, and at this time, components from such a fluid flow into the interface between the side surface of the window 102 and the side surface of the first through-hole 101. When the fluid components thus permeated flow into the polishing device at the lower end of the polishing pad 100 through the second through-hole 201, it can cause a failure of the polishing device or hinder the accurate end point detection of the window 102. From this perspective, the polishing pad 100 ensures the support surface of the window 102 on the third face 21 by forming the second through-hole 201 to be smaller than the first through-hole 101, and at the same time, by forming a multi-stage adhesive layer including the first adhesive layer 30 and the second adhesive layer 40 on the support surface, the water leakage prevention effect can be greatly improved.

[0091] In addition, in order to maximize the water leakage prevention effect, the polishing pad 100 includes a compressed region CR in the support layer 20. Specifically, referring to Figure 2 , the compressed region CR is formed in a region of the support layer 20 corresponding to the lowermost end surface of the window 102. At this time, the region corresponding to the lowermost end surface of the window 102 means a predetermined region including a portion corresponding to the lowermost end surface of the window 102 in the support layer 20, and the extension line of the side surface of the window 102 does not necessarily coincide with the inner end of the compressed region CR. That is, the compressed region CR is formed on a predetermined region to include all portions corresponding to the lowermost end surface of the window 102 from the side surface of the second through-hole 201 toward the inside of the support layer 20.

[0092] In an embodiment, the compression portion CR can have a continuous structure to include all portions corresponding to the lowermost end surface of the window 102 in a direction from the side surface of the second through-hole 201 toward the inside of the support layer. In another aspect, the compression portion CR is a continuous compression region including all portions corresponding to the lowermost end surface of the window 102, and can not include two or more compression regions divided by a non-compression portion NCR. In another aspect, the compression portion CR can be a continuously formed compression region so as to include all portions corresponding to the lowermost end surface of the window 102. That is, the compression portion CR is a continuously formed compression region from the fourth surface 22 side which is the lower surface of the support layer 20, and does not include two or more compression regions having different compression directions in a forming process. Thereby, not only process efficiency can be maximized, but also a high density region formed by a compression process can more favorably improve a water leakage prevention effect.

[0093] Thus, by forming the compression portion CR in a region of the support layer 20 corresponding to the lowermost end surface of the window 102, the compression portion CR can constitute a high density region with respect to a non-compression portion NCR, and thereby, an effect of effectively preventing a fluid component that can flow together with the multi-stage adhesive layer into an interface between the side surface of the window 102 and the side surface of the first through-hole 101 can be performed. As a result, the polishing pad 100 according to an embodiment can achieve a significantly improved water leakage prevention effect due to the multi-stage adhesive layer structure between the lowermost end surface of the window 102 and the third surface 21 and the compression portion CR structure of the support layer 20 being organically combined with each other, as compared with the conventional.

[0094] In an embodiment, the first adhesive layer 30 can include a moisture-curing resin, and the second adhesive layer 40 can include a thermoplastic resin. In an embodiment, the first adhesive layer 30 and the second adhesive layer 40 can be sequentially disposed in a direction from the lowermost end surface of the window 102 toward the third surface 21. The first adhesive layer 30 is an adhesive layer with which a fluid component that leaks water between the side surface of the window 102 and the side surface of the first through-hole 101 mainly contacts, and the first adhesive layer 30 greatly improves a water leakage prevention effect by including a moisture-curing resin. The second adhesive layer 40 is a structure of the multi-stage adhesive layer between the lowermost end surface of the window 102 and the third surface 21, and is a layer disposed between the second surface 12 and the third surface 21 to adhere the polishing layer 10 and the support layer 20, and the second adhesive layer 40 improves a water leakage prevention effect together with the first adhesive layer 30 by being laminated by including a thermoplastic resin, and can secure excellent interface durability of the polishing layer 10 and the support layer 20.

[0095] The first adhesive layer 30 can include a moisture-cured product of a moisture-curable adhesive composition including a urethane-based prepolymer polymerized from a monomer component including an aromatic diisocyanate and a polyol. Here, "moisture-curing" refers to a property in which moisture acts as a curing initiator, and the moisture-curable adhesive composition refers to an adhesive composition in which moisture in the air acts as a curing initiator. In the present specification, "prepolymer" refers to a high molecule having a relatively low molecular weight in which the degree of polymerization is interrupted in an intermediate stage in order to facilitate molding when a cured product is prepared. The prepolymer itself can be finally molded into a cured product by an additional curing process such as heating and / or pressurization, or mixed with and reacted with an additional compound such as a different kind of monomer or a different kind of prepolymer to be finally molded into a cured product.

[0096] The first adhesive layer 30 is derived from a moisture-curable adhesive composition including a urethane-based prepolymer polymerized from the monomer component, thereby greatly improving the interfacial adhesion between the window 102 and the first adhesive layer 30, while based on the excellent compatibility of the first adhesive layer 30 and the second adhesive layer 40, the water leakage prevention effect can be greatly improved.

[0097] More specifically, the first adhesive layer 30 can include: an aromatic diisocyanate of the following Chemical Formula 1; a urethane-based prepolymer polymerized from a monomer component including a diol having a carbon atom number of 2 to 10; and a moisture-cured product of a moisture-curable adhesive composition including an unreacted aromatic diisocyanate of the following Chemical Formula 1.

[0098] [Chemical Formula 1]

[0099]

[0100] For example, the monomer component can include a diol having a carbon atom number of 2 to 10, for example, a carbon atom number of 3 to 10, for example, a carbon atom number of 4 to 10, for example, a carbon atom number of 5 to 10.

[0101] More specifically, the first adhesive layer 30 can include: the aromatic diisocyanate of the Chemical Formula 1; a diol of the following Chemical Formula 2; a urethane-based prepolymer polymerized from a monomer component including a diol of the following Chemical Formula 3; and a moisture-cured product of a moisture-curable adhesive composition including an unreacted aromatic diisocyanate of the Chemical Formula 1.

[0102] [Chemical Formula 2]

[0103]

[0104] [Chemical Formula 3]

[0105]

[0106] The adhesive composition can include about 90 wt% to about 99 wt% of the urethane-based prepolymer, and can include about 1 wt% to about 10 wt% of the unreacted aromatic diisocyanate. For example, about 91 wt% to about 99 wt%, for example, about 93 wt% to about 99 wt%, for example, about 95 wt% to about 99 wt% of the urethane-based prepolymer can be included, and about 1 wt% to about 9 wt%, for example, about 1 wt% to about 7 wt%, for example, about 1 wt% to about 5 wt% of the unreacted aromatic diisocyanate can be included. The unreacted aromatic diisocyanate refers to a diisocyanate in which both terminal isocyanate groups (-NCO) exist in a state in which urethane reaction has not occurred.

[0107] In an embodiment, the moisture-cured product of the moisture-curable adhesive composition can be a result of pressure and ultrasonic welding, pressure and heat welding, or pressure, ultrasonic welding, and heat welding treatment of the moisture-curable adhesive composition.

[0108] The adhesive composition for the first adhesive layer 30 can have a viscosity of about 5,000 mPa.s to about 10,000 mPa.s at room temperature, for example, about 6,000 mPa.s to about 9,000 mPa.s. Here, room temperature can refer to a temperature in the range of about 20°C to about 30°C. When the viscosity of the adhesive composition satisfies this range, excellent process efficiency can be ensured during the formation of the first adhesive layer 30, and at the same time, the density of the first adhesive layer 30 formed by curing the adhesive composition can be more advantageous in terms of water leakage prevention effect.

[0109] Specifically, the second adhesive layer 40 can include one selected from the group consisting of a thermoplastic urethane-based adhesive, a thermoplastic acrylic-based adhesive, a thermoplastic silicone-based adhesive, a combination thereof, and a combination thereof. Since the second adhesive layer 40 includes a thermoplastic resin, a technical advantage in terms of process efficiency improvement can be obtained compared to the case in which a thermosetting resin is included. Specifically, when a thermosetting adhesive is used as the second adhesive layer 40, since it is difficult to apply a roll-to-roll process, the efficiency of mass production is reduced, and since it is necessary to apply a spray method or the like instead of roll-to-roll, there is a possibility that pad contamination increases due to scattering. That is, the second adhesive layer 40 is a large-area layer formed between the second surface and the third surface, and by applying a thermoplastic adhesive, process efficiency is improved, and by preventing polishing pad contamination, the defect rate is significantly reduced, and in terms of ensuring the water leakage prevention effect of the first adhesive layer 30 derived from the moisture-cured adhesive, it can be more advantageous to ensure excellent compatibility.

[0110] In one embodiment, the second adhesive layer 40 can have a thickness of about 15 μm to about 40 μm, for example, about 15 μm to about 35 μm, for example, about 20 μm to about 35 μm, for example, about 22 μm to about 32 μm. By having the thickness of the second adhesive layer 40 satisfy the range, sufficient adhesion between the second surface 12 and the third surface 21 is ensured while contributing to the water leakage prevention effect as a configuration of the multi-stage adhesive layer on the lowermost end surface of the window 102, and thus can be more advantageous.

[0111] Referring to Figure 2 In the polishing pad 100 according to one embodiment, the first adhesive layer 30 can not be disposed between the side surface of the window 102 and the side surface of the first through-hole 101. In another aspect, the first adhesive layer 30 can contact the window 102 only through the lowermost end surface of the window 102. That is, the length of the first adhesive layer 30 disposed between the side surface of the window 102 and the side surface of the first through-hole 101 can be 0 μm. By such a configuration, the gap between the side surface of the window 102 and the side surface of the first through-hole 101 can be minimized, and as a result, technical advantages can be obtained in terms of preventing the introduction of liquid components themselves or the accumulation of process debris or the like in the gap.

[0112] Figure 3 A cross-sectional view of the polishing pad 100' of one embodiment is schematically shown. Referring to Figure 3 , the first adhesive layer 30 can also be disposed between the side surface of the window 102 and the side surface of the first through-hole 101. In another aspect, the first adhesive layer 30 can contact the window 102 through the lowermost end surface of the window 102 and the side surface of the window 102. The length L1 of the first adhesive layer 30 disposed between the side surface of the window 102 and the side surface of the first through-hole 101 can be, for example, about 0.1 μm to about 20 μm, for example, about 0.1 μm to about 10 μm, for example, 0.1 μm to about 5 μm. By such a configuration, technical advantages can be obtained in terms of minimizing the path through which liquid components can move from the uppermost end surface of the window and the polishing surface, and preventing the accumulation of debris.

[0113] Referring to Figure 2 or Figure 3 The width W3 of the first adhesive layer 30 disposed on the lowermost end surface of the window 102 can be equal to or greater than the width W2 of the portion of the lowermost end surface of the window 102 supported by the third surface 21. By such a configuration, the end portion of the interface between the side surface of the window 102 and the side surface of the first through-hole 101 can be effectively sealed by the first adhesive layer 30, and thus can be more advantageous in terms of improving the water leakage prevention effect.

[0114] The width W3 of the first adhesive layer 30 provided on the lowermost end surface of the window 102 can be about 2 mm to about 15 mm, for example, about 2 mm to about 12 mm, for example, about 2 mm to about 10 mm, for example, about 2.5 mm to about 9.5 mm, for example, about 3.5 mm to about 9.5 mm. The width W3 of the first adhesive layer 30 satisfies the range and the correlation with the width W2 of the portion of the lowermost end surface of the window 102 supported by the third face 21 satisfies the above condition, ensuring the light transmission area of the window as large as possible while improving efficiency in ensuring the durability of the structure supported by the support layer. In addition, it can be advantageous in ensuring a sufficiently long path to block liquid components that can leak through the interface between the side surface of the window 102 and the side surface of the first through-hole 101.

[0115] Referring to Figure 2 As described above, the support layer 20 includes the compressed portion CR in the region corresponding to the lowermost end surface of the window 102, and at the same time, can include the non-compressed portion NCR in the region other than the compressed portion CR. The non-compressed portion NCR has a predetermined porosity, functions as a buffer so that an external force applied to the polishing pad 100 is not transmitted to a polishing object through the polishing face 11, and can perform a function of supporting the polishing layer 10.

[0116] Referring to Figure 2 The percentage of the thickness H2 of the compressed portion CR with respect to the thickness H1 of the non-compressed portion NCR can be about 0.01% to about 80%, for example, about 0.01% to about 60%, for example, about 0.01% to about 50%, for example, about 0.1% to about 50%, for example, about 1% to about 50%, for example, about 1% to about 45%, for example, about 2% to about 45%, for example, about 5% to about 45%, for example, about 10% to about 45%, for example, about 15% to about 45%, for example, about 20% to about 45%. That is, the value of H2 / H1*100 can satisfy the range. By compressing the compressed portion CR to a percentage of the thickness with respect to the thickness of the non-compressed portion NCR satisfying the range, it can be more advantageous to improve the water leakage prevention effect together with the multi-stage adhesive layer structure of the lowermost end surface of the window 102. In addition, it can be possible to constitute a high-density region effective for water leakage prevention while the compressed portion CR does not impair the buffering function and the supporting function of the non-compressed portion NCR.

[0117] Referring to Figure 2The thickness H2 of the compression section CR can be approximately 0.01% to approximately 30% of its width, for example, approximately 0.01% to approximately 20%, for example, approximately 0.1% to approximately 20%, for example, approximately 1% to approximately 20%, for example, approximately 1% to approximately 15%, for example, approximately 2% to approximately 15%, for example, approximately 2% to approximately 10%, for example, approximately 3% to approximately 9%. Because the thickness of the compression section CR satisfies this ratio to its width, the compression section CR region can facilitate optimal leakage prevention without compromising the overall support capacity of the support layer 20.

[0118] Figure 4 This is an enlarged view of the above. Figure 2 A schematic diagram of Part B. (Refer to...) Figure 4 The height of the uppermost surface 102 of the window can be lower than the height of the first surface 11. Specifically, the height difference d3 between the uppermost surface 102 and the first surface 11 can be approximately 0 μm to approximately 300 μm, for example, approximately 0 μm to approximately 250 μm, for example, approximately 50 μm to approximately 250 μm, for example, approximately 50 μm to approximately 150 μm. Since the height difference between the uppermost surface 102 and the first surface 11 has the relationship described above, it is advantageous in minimizing the possibility of liquid components leaking out to the interface between the side of the window 102 and the side of the first through-hole 101. More specifically, since the surface hardness of the uppermost surface 102 and the first surface 11 satisfies the relationship described later, and the height difference between the uppermost surface 102 and the first surface 11 satisfies the above conditions, the polishing interface can move smoothly during the overall polishing process of the uppermost surface 102 and the first surface 11, thus maximizing the leakage prevention effect.

[0119] Figure 5 This is an enlarged view of the above. Figure 2 A schematic diagram of Part A. (Refer to...) Figure 5 The first surface 11 may include at least one groove 111. The groove 111 is a groove structure machined to a depth d1 less than the thickness D1 of the polishing layer 10. During the polishing process, it can perform the function of ensuring the flowability of liquid components such as polishing slurry and cleaning fluid applied to the first surface 11. The flowability of the polishing slurry, etc., applied to the first surface 11 is closely related to water leakage through the interface between the side of the window 102 and the side of the first through-hole 101. Appropriate structural design of the groove 111 can help maximize the water leakage prevention effect of the polishing pad 100.

[0120] In an embodiment, the planar structure of the polishing pad 100 can be actually circular, and the at least one groove 111 can be a concentric circular structure disposed at a predetermined interval from the center of the polishing layer 10 on the first surface 11 to the end. In another embodiment, the at least one groove 111 can be a radial structure continuously formed from the center of the polishing layer 10 on the first surface 11 to the end. In still another embodiment, the at least one groove 111 can include both the concentric circular structure and the radial structure.

[0121] In an embodiment, the thickness D1 of the polishing layer can be about 0.8 mm to about 5.0 mm, for example, about 1.0 mm to about 4.0 mm, for example, about 1.0 mm to 3.0 mm, for example, about 1.5 mm to about 3.0 mm, for example, about 1.7 mm to about 2.7 mm, for example, about 2.0 mm to about 3.5 mm.

[0122] In an embodiment, the width w1 of the groove 111 can be about 0.1 mm to about 20 mm, for example, about 0.1 mm to about 15 mm, for example, about 0.1 mm to about 10 mm, for example, about 0.1 mm to about 5 mm, for example, about 0.1 mm to about 1.5 mm.

[0123] In an embodiment, the depth d1 of the groove 111 can be about 100 μm to about 1500 μm, for example, about 200 μm to about 1400 μm, for example, about 300 μm to about 1300 μm, for example, about 400 μm to about 1200 μm, for example, about 400 μm to about 1000 μm, for example, about 400 μm to about 800 μm.

[0124] In an embodiment, the first surface 11 includes a plurality of grooves 111, and when the plurality of grooves 111 include concentric circular grooves, the pitch p1 between two adjacent grooves 111 among the concentric circular grooves can be about 2 mm to about 70 mm, for example, about 2 mm to about 60 mm, for example, about 2 mm to about 50 mm, for example, about 2 mm to about 35 mm, for example, about 2 mm to about 10 mm, for example, about 2 mm to about 8 mm.

[0125] Since each or all of the depth dl, the width wl, and the pitch pl of the at least one groove 111 satisfy the above-described ranges, the fluidity of the polishing slurry thereby achieved can be appropriately ensured to maximize the prevention effect of water leakage through the interface between the side surface of the window 102 and the side surface of the first through-hole 101. In another aspect, when the depth dl, the width wl, and the pitch pl of the at least one groove 111 deviate from the above-described ranges, the fluidity of the polishing slurry thereby achieved is too fast or the flow rate per unit time is too much, the polishing slurry components can not function as originally intended and be discharged outside the first face 11, and conversely, when the fluidity of the polishing slurry is too slow or the flow rate per unit time is too little, the slurry components that are to perform the physical and chemical polishing functions on the polishing face can not function as originally intended and the amount of leakage through the interface between the side surface of the window 102 and the side surface of the first through-hole 101 suddenly increases, and thus the long-term durability of the multi-stage adhesion structure of the first adhesive layer 30 and the second adhesive layer 40 and the water leakage prevention effect through the compression portion of the support layer can be reduced. That is, since each or all of the depth dl, the width wl, and the pitch pl of the at least one groove 111 satisfy the above-described ranges, it can be advantageous to maximize the water leakage prevention effect through the multi-stage adhesion structure and the compression portion.

[0126] Referring to Figure 5 , the polishing layer 10 can be a porous structure including a plurality of air pores 112. The plurality of air pores 112 are dispersed throughout the polishing layer 10, and even if the polishing face 11 is ground in the polishing process by a conditioner or the like, it can function to continuously generate a predetermined roughness on the surface. A portion of the plurality of air pores 112 can be exposed to the outside on the first face 11 of the polishing layer 10, and appear as a fine concave portion 113 different from the groove 111. The fine concave portion 113 can perform the functions of determining the fluidity and mooring space of the polishing liquid or the polishing slurry together with the groove 111 during use of the polishing pad 100, and can perform the function of providing physical friction for polishing of the polished face.

[0127] The average air pore size of the plurality of air pores 112 is about 10 μm to about 30 μm, for example, about 10 μm to about 25 μm, for example, about 15 μm to about 25 μm, for example, about 18 μm to about 23 μm. The average air pore size is measured by using image analysis software to measure the diameter of the entire air pore from the image obtained after observing the cross section by using a scanning electron microscope (SEM) to magnify the image of the polishing pad cut into a square of 1 mm x 1 mm (thickness: 2 mm) of the polishing face 1 mm 2 2 ​The average value of the sum of diameters of the plurality of air holes divided by the number of the plurality of air holes. Since the polishing layer 10 has a porous structure composed of a plurality of air holes satisfying the average air hole size, it can have appropriate mechanical properties, which have excellent compatibility with the mechanical and physical properties of the window 102, and by minimizing the occurrence of leakage of the liquid component leaking out between the polishing layer 10 and the window 102, it can be more advantageous in terms of water leakage prevention.

[0128] The first surface 11 can have a predetermined surface roughness by the fine recessed portion 113. In an embodiment, the surface roughness (Ra) of the first surface 11 can be about 1 μm to about 20 μm, for example, about 2 μm to about 18 μm, for example, about 3 μm to about 16 μm, for example, about 4 μm to about 14 μm, for example, about 4 μm to about 10 μm. Since the surface roughness (Ra) of the first surface 11 satisfies the range, the flowability of the polishing slurry through the fine recessed portion 113 is associated with the water leakage prevention effect of the multi-stage adhesive structure and the compression portion and is appropriately ensured.

[0129] Figure 6 A cross section of the polishing pad 200 of still another embodiment is schematically shown. Referring to Figure 6 The polishing pad 200 can further include a recessed portion 103 at the lowermost end surface of the window 102. The recessed portion 103 is a recessed portion machined to have a predetermined depth d2 from the lowermost end surface to the uppermost end surface of the window 102, and in order to end point detection, more accurate end point detection can be achieved by shortening the light transmission path through the window 102.

[0130] The recessed portion 103 can have a depth d2 smaller than the thickness D2 of the window 102. The thickness D2 of the window 102 can be about 1.5 mm to about 3.0 mm, for example, about 1.5 mm to about 2.5 mm, for example, about 2.0 mm to 2.2 mm. The depth d2 of the recessed portion 103 can be, for example, about 0.1 mm to about 2.5 mm, for example, about 0.1 mm to about 2.0 mm, for example, about 0.1 mm to about 1.5 mm, for example, about 0.6 mm to about 1.0 mm. Since the thickness D2 of the window 102 and the depth d2 of the recessed portion 103 satisfy the ranges, respectively or simultaneously, excellent end point detection function can be achieved. In addition, at the same time, the length of the path in which water leakage can occur is expressed as a path having the same length as the depth of the window 102, and thus an effective structure can also be ensured in terms of water leakage prevention.

[0131] In an implementation, the Shore D hardness of the first face 11 measured in a room temperature dry state can be less than the Shore D hardness of the uppermost end face of the window 102 measured in a room temperature dry state. Here, the room temperature dry state refers to a dry state under a temperature condition ranging from about 20 °C to about 30 °C without a wet condition treatment described later. For example, the difference between the Shore D hardness of the first face 11 measured in a room temperature dry state and the Shore D hardness of the uppermost end face of the window 102 measured in a room temperature dry state can be about 5 to about 10, for example, about 5 to about 7, for example, about 5.5 to about 6.5.

[0132] In an implementation, the Shore D hardness of the uppermost end face of the window 102 measured in a room temperature dry state can be about 60 to about 70, for example, about 60 to 68, for example, about 60 to about 65. In an implementation, the Shore D hardness of the first face 11 measured in a room temperature dry state can be about 50 to about 65, for example, about 53 to 65.

[0133] In an implementation, the difference between the Shore D wet hardness of the uppermost end face of the window 102 measured at 30 °C and the Shore D wet hardness of the uppermost end face of the window 102 measured in a room temperature dry state can be about 0 to about 1.0, for example, about 0 to about 0.8.

[0134] In an implementation, the Shore D wet hardness of the uppermost end face of the window 102 measured at 50 °C can be less than the Shore D wet hardness of the uppermost end face of the window 102 measured in a room temperature dry state. For example, the difference between the Shore D wet hardness of the uppermost end face of the window 102 measured at 50 °C and the Shore D wet hardness of the uppermost end face of the window 102 measured in a room temperature dry state can be about 1 to about 7, for example, about 1 to about 6, for example, about 1 to 5.5.

[0135] In an implementation, the Shore D wet hardness of the uppermost end face of the window 102 measured at 70 °C can be less than the Shore D wet hardness of the uppermost end face of the window 102 measured in a room temperature dry state. For example, the difference between the Shore D wet hardness of the uppermost end face of the window 102 measured at 70 °C and the Shore D wet hardness of the uppermost end face of the window 102 measured in a room temperature dry state can be about 5 to about 10, for example, about 6 to about 10, for example, about 7 to 10.

[0136] In an embodiment, the Shore D wet hardness of the first surface 11 of the polishing layer 10 measured at 30°C can be less than the Shore D wet hardness of the uppermost surface of the window 102 measured at 30°C. For example, the difference between the Shore D wet hardness of the first surface 11 of the polishing layer and the Shore D wet hardness of the uppermost surface of the window 102 measured at 30°C can be more than about 0 and less than about 15, for example, can be about 1 to about 15, for example, can be about 2 to about 15.

[0137] In an embodiment, the Shore D wet hardness of the first surface 11 of the polishing layer 10 measured at 50°C can be less than the Shore D wet hardness of the uppermost surface of the window 102 measured at 50°C. For example, the difference between the Shore D wet hardness of the first surface 11 of the polishing layer and the Shore D wet hardness of the uppermost surface of the window 102 measured at 50°C can be more than about 0 and less than about 25, for example, can be about 1 to about 25, for example, can be about 5 to about 25, for example, can be about 5 to 15.

[0138] In an embodiment, the Shore D wet hardness of the first surface 11 of the polishing layer 10 measured at 70°C can be less than the Shore D wet hardness of the uppermost surface of the window 102 measured at 70°C. For example, the difference between the Shore D wet hardness of the first surface 11 of the polishing layer and the Shore D wet hardness of the uppermost surface of the window 102 measured at 70°C can be more than about 0 and less than about 25, for example, can be about 1 to about 25, for example, can be about 5 to about 25, for example, can be about 8 to 16.

[0139] Here, the Shore D wet hardness refers to the surface hardness value measured after the window 102 or the polishing layer 10 is immersed in water for 30 minutes at the temperature.

[0140] The polishing process using the polishing pad 100 is a polishing process in which a liquid slurry is mainly applied to the first surface 11. In addition, the temperature of the polishing process can vary mainly in the range of about 30°C to about 70°C. That is, the hardness variation of the uppermost surface of the window 102 based on the Shore D hardness measured under the temperature conditions and the wet environment similar to the actual process satisfies the above-described tendency, and at the same time, the hardness relationship of the first surface 11 and the uppermost surface of the window 102 in the normal temperature dry state satisfies the above-described range, so that the polishing operation is smoothly performed during the polishing process by the entire uppermost surface of the window 102 and the first surface 11, and thus it is possible to advantageously minimize the leakage of the liquid component through the interface between the side surface of the first through-hole 101 and the side surface of the window 102.

[0141] In an embodiment, the window 102 can include a non-foamed cured product of a window composition including a first urethane-based prepolymer. Since the window 102 includes a non-foamed cured product, it can be more advantageous to ensure the light transmittance and proper surface hardness required for end point detection than in the case of including a foamed cured product. The "prepolymer" refers to a polymer having a relatively low molecular weight in which the degree of polymerization is interrupted in an intermediate stage for the purpose of facilitating molding when a cured product is prepared. The prepolymer itself can be finally molded into a cured product by an additional curing process such as heating and / or pressurization, or mixed with and reacted with an additional compound such as a different kind of monomer or a different kind of prepolymer to be finally molded into a cured product.

[0142] The first urethane-based prepolymer can be prepared by reacting a first isocyanate compound with a first polyol compound. The first isocyanate compound can include one selected from the group consisting of an aromatic diisocyanate, an aliphatic diisocyanate, a cycloaliphatic diisocyanate, and combinations thereof. In an embodiment, the first isocyanate compound can include an aromatic diisocyanate and a cycloaliphatic diisocyanate.

[0143] The first isocyanate compound, for example, can include one selected from the group consisting of 2,4-toluenediisocyanate (2,4-TDI), 2,6-toluenediisocyanate (2,6-TDI), naphthalene-1,5-diisocyanate, p-phenylenediisocyanate, tolylene diisocyanate, 4,4'-diphenylmethanediisocyanate, hexamethylenediisocyanate, dicyclohexylmethanediisocyanate, 4,4'-dicyclohexylmethanediisocyanate (H 12 MDI), isophoronediisocyanate, and combinations thereof.

[0144] The first polyol compound may, for example, include one selected from the group consisting of a polyether polyol, a polyester polyol, a polycarbonate polyol, an acryl polyol, and combinations thereof. The "polyol" refers to a compound containing two or more hydroxyl groups (-OH) per molecule. In an embodiment, the first polyol compound can include a diol compound containing 2 hydroxyl groups, i.e., a diol or a glycol. In an implementation, the first polyol compound can include a polyether polyol.

[0145] The first polyol compound may, for example, include one selected from the group consisting of polytetramethylene ether glycol (PTMG), polypropylene ether glycol, ethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol (DEG), dipropylene glycol (DPG), tripropylene glycol, polypropylene glycol (PPG), and combinations thereof.

[0146] In an implementation, the first polyol compound can have a weight average molecular weight (Mw) of about 100 g / mol to about 3000 g / mol, for example, about 100 g / mol to about 2000 g / mol, for example, about 100 g / mol to about 1800 g / mol, for example, about 500 g / mol to about 1500 g / mol, for example, about 800 g / mol to about 1200 g / mol.

[0147] In an embodiment, the first polyol compound can include a low molecular weight polyol having a weight average molecular weight (Mw) of about 100 g / mol or more and less than about 300 g / mol, and a high molecular weight polyol having a weight average molecular weight (Mw) of about 300 g / mol or more and about 1800 g / mol or less. By appropriately mixing the low molecular weight polyol and the high molecular weight polyol having the weight average molecular weight in the range as the first polyol compound, a non-foamed cured product having an appropriate crosslinked structure can be formed from the first urethane-based prepolymer, and the window 102 can be more advantageous in terms of ensuring required physical properties such as hardness and optical properties such as light transmittance.

[0148] The weight average molecular weight (Mw) of the first urethane-based prepolymer can be about 500 g / mol to about 2000 g / mol, for example, can be about 800 g / mol to about 1500 g / mol, for example, can be about 900 g / mol to about 1200 g / mol, for example, can be about 950 g / mol to about 1100 g / mol. The first urethane-based prepolymer has a degree of polymerization corresponding to the above range of weight average molecular weight (Mw), so that the window composition is non-foam cured under predetermined process conditions, can be more advantageous to form a window 102 having a proper mutual surface hardness relationship with the polishing surface of the polishing layer 10, whereby polishing is smoothly performed by the polishing surface and the uppermost end surface of the window 102 as a whole, and therefore can be advantageous in terms of water leakage prevention.

[0149] In an embodiment, the first isocyanate compound can include an aromatic diisocyanate and a cycloaliphatic diisocyanate. The aromatic diisocyanate can include, for example, 2,4-toluene diisocyanate (2,4-TDI) and 2,6-toluene diisocyanate (2,6-TDI), and the cycloaliphatic diisocyanate can include dicyclohexylmethane diisocyanate (H 12 MDI). In addition, the first polyol compound can include, for example, polytetramethylene ether glycol (PTMG), diethylene glycol (DEG), and polypropylene glycol (PPG).

[0150] In the window composition, the total amount of the first polyol compound can be about 100 parts by weight to about 250 parts by weight, for example, can be about 120 parts by weight to about 250 parts by weight, for example, can be about 120 parts by weight to about 240 parts by weight, for example, can be about 150 parts by weight to about 240 parts by weight, for example, can be about 150 parts by weight to about 200 parts by weight, with respect to 100 parts by weight of the total amount of the first isocyanate compound in the entire components for preparing the first urethane-based prepolymer.

[0151] In the window composition, the first isocyanate compound includes the aromatic diisocyanate, and the aromatic diisocyanate includes 2,4-TDI and 2,6-TDI, and the content of the 2,6-TDI can be about 1 part by weight to about 40 parts by weight, for example, can be about 1 part by weight to about 30 parts by weight, for example, can be about 10 parts by weight to about 30 parts by weight, for example, can be about 15 parts by weight to about 30 parts by weight, with respect to 100 parts by weight of the 2,4-TDI.

[0152] In the window composition, the first isocyanate compound includes the aromatic diisocyanate and the alicyclic diisocyanate, and the total content of the alicyclic diisocyanate can be about 5 parts by weight to about 30 parts by weight, for example, can be about 10 parts by weight to about 30 parts by weight, for example, can be about 15 parts by weight to about 30 parts by weight, with respect to 100 parts by weight of the total content of the aromatic diisocyanate.

[0153] Since the relative content ratio of each component of the window composition satisfies the above ranges respectively or simultaneously, the window 102 thus prepared ensures the light transmittance required for the end point detection function, while its uppermost end surface can have an appropriate surface hardness. Therefore, the uppermost end surface of the window 102 can form an appropriate mutual surface hardness relationship with the polishing surface of the polishing layer 10 prepared from a polishing layer composition whose relative content ratio of each component satisfies the ranges described later, and by smoothing the polishing repeatedly performed through the polishing surface and the uppermost end surface of the window, water leakage between the side surface of the window 102 and the side surface of the first through-hole 101 can be more effectively prevented.

[0154] The content of isocyanate groups (NCO%) of the window composition can be about 6% by weight to about 10% by weight, for example, can be about 7% by weight to about 9% by weight, for example, can be about 7.5% by weight to about 8.5% by weight. The isocyanate group content refers to the percentage of the weight of the isocyanate group (-NCO) that does not undergo urethane reaction and exists as a free reactive group in the total weight of the window composition. The isocyanate group content can be adjusted and designed by comprehensively adjusting the kinds and contents of each of the first isocyanate compound and the first polyol compound used to prepare the first urethane-based prepolymer, the conditions of temperature, pressure, time, etc. of the process of preparing the first urethane-based prepolymer, and the kinds and contents of additives used for the preparation of the first urethane-based prepolymer, etc. Since the isocyanate group content of the window composition satisfies the range, the window composition is non-foamed and cured and can ensure an appropriate surface hardness, and in terms of maximizing the water leakage prevention effect, it can be advantageous to ensure an appropriate hardness interrelationship with the polishing layer.

[0155] The window composition can further include a curing agent. The curing agent is a compound for chemically reacting with the first urethane-based prepolymer to form a final cured structure within the window, and for example, can include an amine compound or an alcohol compound. Specifically, the curing agent can include one selected from the group consisting of an aromatic amine, an aliphatic amine, an aromatic alcohol, an aliphatic alcohol, and combinations thereof.

[0156] For example, the curing agent can include one selected from the group consisting of 4,4'-methylenebis(2-chloroaniline) (MOCA), diethyltoluenediamine (DETDA), diaminodiphenylmethane, dimethylthio-toluene diamine (DMTDA), propanediol bis p-aminobenzoate, Methylene bis-methylanthranilate, diaminodiphenylsulfone, m-xylylenediamine, isophoronediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, polypropylenediamine, polypropylenetriamine, bis(4-amino-3-chlorophenyl)methane, and combinations thereof.

[0157] The content of the curing agent can be about 18 parts by weight to about 28 parts by weight, for example, can be about 19 parts by weight to about 27 parts by weight, for example, can be about 20 parts by weight to about 26 parts by weight, based on 100 parts by weight of the window composition.

[0158] In an embodiment, the curing agent can include an amine compound, and a molar ratio of isocyanate groups (-NCO) in the window composition to amine groups (-NH2) in the curing agent can be about 1 :0.60 to about 1 :0.99, for example, can be about 1 :0.60 to about 1 :0.95.

[0159] As described above, the window can include a non-foamed cured product of the window composition. Accordingly, the window composition can not include a foaming agent. Since the window composition is subjected to a curing process without a foaming agent, it is possible to secure light transmittance required for end point detection.

[0160] The window composition can further include an additive according to necessity. The kind of the additive can include one selected from the group consisting of a surfactant, a pH adjuster, a binder, an antioxidant, a heat stabilizer, a dispersion stabilizer, and a combination thereof. The names of "surfactant", "antioxidant", and the like are arbitrary names based on the main role of the substance, and each of the respective substances does not necessarily perform only the function of the role limited by the respective names.

[0161] In an embodiment, the window 102 having a thickness of 2 mm can have a light transmittance of about 1% to about 50%, for example, about 30% to about 85%, for example, about 30% to about 70%, for example, about 30% to about 60%, for example, about 1% to about 20%, for example, about 2% to about 20%, for example, about 4% to about 15% with respect to one light having a wavelength in a range of about 500 nm to about 700 nm. The light transmittance of the window can be adjusted according to whether or not the surface of the window surface is surface-treated, the composition of the window, and the like. While the window 102 has the light transmittance as described above, the uppermost end surface of the window 102 has the hardness relationship with the polishing surface of the polishing layer 10 as described above, so that an excellent water leakage prevention effect can be ensured.

[0162] In an embodiment, the polishing layer 10 can include a foamed cured product of a polishing layer composition including a second urethane-based prepolymer. The polishing layer 10 can have a pore structure by including the foamed cured product, and such a pore structure forms surface roughness on the polishing surface that cannot be formed with a non-foamed cured product, and thus can perform a function of appropriately ensuring the fluidity of the polishing slurry applied to the polishing surface and the physical friction with the polished surface of the polishing object. The "prepolymer" refers to a polymer having a relatively low molecular weight in which the degree of polymerization is interrupted in an intermediate stage in order to facilitate molding at the time of preparing a cured product. The prepolymer itself can be finally molded into a cured product by an additional curing process such as heating and / or pressurization, or mixed with and reacted with an additional compound such as a different kind of monomer or a different kind of prepolymer, and finally molded into a cured product.

[0163] The second urethane-based prepolymer can be prepared by reacting a second isocyanate compound and a second polyol compound. The second isocyanate compound can include one selected from the group consisting of an aromatic diisocyanate, an aliphatic diisocyanate, a cycloaliphatic diisocyanate, and a combination thereof. In an embodiment, the second isocyanate compound can include an aromatic diisocyanate. For example, the second isocyanate compound can include an aromatic diisocyanate and a cycloaliphatic diisocyanate.

[0164] The second isocyanate compound can include one selected from the group consisting of, for example, 2,4-toluenediisocyanate (2,4-TDI), 2,6-toluenediisocyanate (2,6-TDI), naphthalene-1,5-diisocyanate, p-phenylenediisocyanate, tolidine diisocyanate, 4,4'-diphenylmethanediisocyanate, hexamethylenediisocyanate, dicyclohexylmethanediisocyanate, 4,4'-dicyclohexylmethanediisocyanate (H 12 MDI), isoporonediisocyanate, and combinations thereof.

[0165] The second polyol compound can include one selected from the group consisting of, for example, a polyether polyol, a polyester polyol, a polycarbonate polyol, an acryl polyol, and combinations thereof. The "polyol" refers to a compound containing two or more hydroxyl groups (-OH) per molecule. In an embodiment, the second polyol compound can include a diol compound containing two hydroxyl groups, i.e., a diol or a glycol. In an embodiment, the second polyol compound can include a polyether polyol.

[0166] The second polyol compound, for example, can include one selected from the group consisting of polytetramethylene ether glycol (PTMG), polypropylene ether glycol, ethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol (DEG), dipropylene glycol (DPG), tripropylene glycol, polypropylene glycol (PPG), and combinations thereof.

[0167] In one embodiment, the second polyol compound can include a low molecular weight polyol having a weight average molecular weight (Mw) of about 100 g / mol or more and less than about 300 g / mol and a high molecular weight polyol having a weight average molecular weight (Mw) of about 300 g / mol or more and about 1800 g / mol or less. By appropriately mixing the low molecular weight polyol and the high molecular weight polyol having the weight average molecular weight in the above ranges as the second polyol compound, a foamed cured product having an appropriate crosslinked structure can be formed from the second urethane-based prepolymer, and thus a foamed structure having physical properties such as hardness required for the polishing layer 10 and pores having an appropriate size can be more favorably formed.

[0168] The weight average molecular weight (Mw) of the second urethane-based prepolymer can be about 500 g / mol to about 3000 g / mol, for example, can be about 600 g / mol to about 2000 g / mol, for example, can be about 800 g / mol to about 1000 g / mol. The second urethane-based prepolymer has a degree of polymerization corresponding to the above range of weight average molecular weight (Mw), and thus the polishing layer composition, when foamed and cured under predetermined process conditions, can be more favorably formed into a polishing layer 10 having a polished surface having an appropriate mutual surface hardness relationship with the uppermost end surface of the window 102, whereby polishing is smoothly performed as a whole by the polished surface and the uppermost end surface of the window 102, and thus can also be advantageous in terms of preventing water leakage through the interface between the window 102 and the polishing layer 10.

[0169] In one implementation, the second isocyanate compound can include an aromatic diisocyanate and an alicyclic diisocyanate. The aromatic diisocyanate can include, for example, 2,4-toluene diisocyanate (2,4-TDI) and 2,6-toluene diisocyanate (2,6-TDI), and the alicyclic diisocyanate can include dicyclohexylmethane diisocyanate (H 12 MDI). In addition, the second polyol compound can include, for example, polytetramethylene ether glycol (PTMG) and diethylene glycol (DEG).

[0170] In the polishing layer composition, the total amount of the second polyol compound can be about 100 parts by weight to about 250 parts by weight, for example, can be about 110 parts by weight to about 250 parts by weight, for example, can be about 110 parts by weight to about 240 parts by weight, for example, can be about 110 parts by weight to about 200 parts by weight, for example, can be about 110 parts by weight to about 180 parts by weight, for example, can be about 110 parts by weight or more and less than about 150 parts by weight, with respect to 100 parts by weight of the second isocyanate compound in the entire components for preparing the second urethane-based prepolymer.

[0171] In the polishing layer composition, the second isocyanate compound includes the aromatic diisocyanate, and the aromatic diisocyanate includes 2,4-TDI and 2,6-TDI, and the content of the 2,6-TDI can be about 1 part by weight to about 40 parts by weight, for example, can be about 1 part by weight to about 30 parts by weight, for example, can be about 10 parts by weight to about 30 parts by weight, for example, can be about 15 parts by weight to about 30 parts by weight, with respect to 100 parts by weight of the 2,4-TDI.

[0172] In the polishing layer composition, the second isocyanate compound includes the aromatic diisocyanate and the alicyclic diisocyanate, and the total content of the alicyclic diisocyanate can be about 5 parts by weight to about 30 parts by weight, for example, can be about 5 parts by weight to about 25 parts by weight, for example, can be about 5 parts by weight to about 20 parts by weight, for example, can be more than about 5 parts by weight and less than about 15 parts by weight, with respect to the total content of 100 parts by weight of the aromatic diisocyanate.

[0173] Since the relative content ratio of each component of the polishing layer composition satisfies the above ranges respectively or simultaneously, the polishing surface of the polishing layer 10 prepared thereby can have an appropriate pore structure and surface hardness. Therefore, the polishing surface of the polishing layer 10 can form an appropriate mutual surface hardness relationship with the uppermost end surface of the window 102, each component of which satisfies the above conditions respectively or simultaneously, as a result, since polishing is smoothly performed by the polishing surface and the uppermost end surface of the window 102 as a whole, it can also be advantageous in terms of preventing water leakage through the interface between the window 102 and the polishing layer 10.

[0174] The isocyanate group content (NCO%) of the polishing layer composition can be about 6% by weight to about 12% by weight, for example, can be about 6% by weight to about 10% by weight, for example, can be about 6% by weight to about 9% by weight. The isocyanate group content refers to the percentage of the weight of the isocyanate group (-NCO) that does not undergo urethane reaction and exists as a free reactive group in the total weight of the preliminary composition. The isocyanate group content can be adjusted and designed by comprehensively adjusting the kinds and contents of the second isocyanate compound and the second polyol compound used to prepare the second urethane-based prepolymer, the conditions of temperature, pressure, time, etc. of the process of preparing the second urethane-based prepolymer, and the kinds and contents of additives used for the preparation of the second urethane-based prepolymer, etc. Since the isocyanate group content of the polishing layer composition satisfies the range, the polishing layer composition is foamed and cured under predetermined process conditions, and thus it can be more advantageous to form the polishing layer 10 having a polishing surface having an appropriate mutual surface hardness relationship with the uppermost end surface of the window 102, whereby since polishing is smoothly performed by the polishing surface and the uppermost end surface of the window 102 as a whole, it is also advantageous in preventing water leakage through the interface between the window 102 and the polishing layer 10.

[0175] The polishing layer composition can further include a curing agent. The curing agent is a compound for chemically reacting with the second urethane-based prepolymer to form a final cured structure within the polishing layer, for example, can include an amine compound or an alcohol compound. Specifically, the curing agent can include one selected from the group consisting of an aromatic amine, an aliphatic amine, an aromatic alcohol, an aliphatic alcohol, and combinations thereof.

[0176] For example, the curing agent can include one selected from the group consisting of 4,4'-methylenebis(2-chloroaniline) (MOCA), diethyltoluenediamine (DETDA), diaminodiphenylmethane, dimethylthio-toluene diamine (DMTDA), propanediol bis p-aminobenzoate, Methylene bis-methylanthranilate, diaminodiphenylsulfone, m-xylylenediamine, isophoronediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, polypropylenediamine, polypropylenetriamine, bis(4-amino-3-chlorophenyl)methane, and combinations thereof.

[0177] The content of the curing agent can be about 18 parts by weight to about 28 parts by weight, for example, can be about 19 parts by weight to about 27 parts by weight, for example, can be about 20 parts by weight to about 26 parts by weight, based on 100 parts by weight of the polishing layer composition.

[0178] In an implementation, the curing agent can include an amine compound, and a molar ratio of isocyanate groups (-NCO) in the polishing layer composition to amine groups (-NH2) in the curing agent can be about 1 :0.60 to about 1 :0.99, for example, can be about 1 :0.60 to about 1 :0.95.

[0179] The polishing layer composition can further include a blowing agent. The blowing agent is a component for forming a pore structure in the polishing layer, and can include one selected from the group consisting of a solid blowing agent, a gas blowing agent, a liquid blowing agent, and combinations thereof. In an embodiment, the blowing agent can include a solid blowing agent, a gas blowing agent, or can include a combination thereof.

[0180] The average particle diameter of the solid foaming agent can be about 5 μm to about 200 μm, for example, about 20 μm to about 50 μm, for example, about 21 μm to about 50 μm, for example, about 21 μm to about 40 μm. The average particle diameter of the solid foaming agent refers to the average particle diameter of the expanded particles themselves when the solid foaming agent is the expanded particles described below, and refers to the average particle diameter of the particles after expansion by heat or pressure when the solid foaming agent is the unexpanded particles described later.

[0181] The solid foaming agent can include expandable particles. The expandable particles are particles having a property that can be expanded by heat or pressure, and the final size in the polishing layer depends on the heat or pressure applied during the process of preparing the polishing layer, etc. The expandable particles can include expanded particles, unexpanded particles, or a combination thereof. The expanded particles, as particles that are pre-expanded by heat, refer to particles that have little or no change in size due to the heat or pressure applied during the process of preparing the polishing layer. The unexpanded particles, as particles that are not pre-expanded, refer to particles that are expanded by the heat or pressure applied during the process of preparing the polishing layer and have a final size determined.

[0182] The expandable particles can include: a resin material skin; and an expansion-inducing component present in the inside surrounded by the skin.

[0183] For example, the skin can include a thermoplastic resin, which can be one or more selected from the group consisting of a vinylidene chloride-based copolymer, an acrylonitrile-based copolymer, a methacrylonitrile-based copolymer, and an acrylic acid-based copolymer.

[0184] The expansion-inducing component can include one selected from the group consisting of a hydrocarbon compound, a fluorochlorine compound, a tetraalkylsilane compound, and a combination thereof.

[0185] Specifically, the hydrocarbon compound can include one selected from the group consisting of ethane, ethylene, propane, propene, n-butane, isobutene, n-butene, isobutene, n-pentane, isopentane, neopentane, n-hexane, heptane, petroleum ether, and a combination thereof.

[0186] The fluorochlorinated compound can include one selected from the group consisting of trichlorofluoromethane (CC13F), dichlorodifluoromethane (CC12F2), chlorotrifluoromethane (CCIF3), dichlorotetrafluoroethane (CCIF2-CCIF2), and combinations thereof.

[0187] The tetraalkylsilane compound can include one selected from the group consisting of tetramethylsilane, trimethylethylsilane, trimethylisopropylsilane, trimethyl-n-propylsilane, and combinations thereof.

[0188] The solid foaming agent can optionally include inorganic component-treated particles. For example, the solid foaming agent can include expandable particles treated with an inorganic component. In an embodiment, the solid foaming agent can include expandable particles treated with silicon dioxide (Si02) particles. The inorganic component treatment of the solid foaming agent can prevent agglomeration between the particles. The chemical, electrical, and / or physical properties of the foaming agent surface of the inorganic component-treated solid foaming agent can be different from those of the non-inorganic component-treated solid foaming agent.

[0189] The content of the solid foaming agent can be about 0.5 parts by weight to about 10 parts by weight, for example, about 1 part by weight to about 3 parts by weight, for example, about 1.3 parts by weight to about 2.7 parts by weight, for example, about 1.3 parts by weight to about 2.6 parts by weight, based on 100 parts by weight of the urethane-based prepolymer.

[0190] The kind and content of the solid foaming agent can be designed according to the desired pore structure and physical properties of the polishing layer.

[0191] The gas foaming agent can include an inert gas. The gas foaming agent can be added during the reaction of the second urethane-based prepolymer and the curing agent to serve as a pore-forming element.

[0192] The kind of the inert gas is not particularly limited as long as it is a gas that does not participate in the reaction between the second urethane-based prepolymer and the curing agent. For example, the inert gas can include one selected from the group consisting of nitrogen (N2), argon (Ar), helium (He), and combinations thereof. Specifically, the inert gas can include nitrogen (N2) or argon (Ar).

[0193] The kind and content of the gas foaming agent can be designed according to the desired pore structure and physical properties of the polishing layer.

[0194] In an embodiment, the foaming agent can include a solid foaming agent. For example, the foaming agent can be formed only of a solid foaming agent.

[0195] The solid foaming agent can include expandable particles, which can include heat-expandable particles. For example, the solid foaming agent can consist only of heat-expandable particles. In the case of consisting only of heat-expandable particles without including the unexpanded particles, although the variability of the pore structure can decrease, the predictability can increase, thus being advantageous in achieving uniform pore properties in all regions of the polishing layer.

[0196] In an embodiment, the heat-expandable particles can be particles having an average particle diameter of about 5 μm to about 200 μm. The average particle diameter of the heat-expandable particles can be about 5 μm to about 100 μm, for example, about 10 μm to about 80 μm, for example, about 20 μm to about 70 μm, for example, about 20 μm to about 50 μm, for example, about 30 μm to about 70 μm, for example, about 25 μm to 45 μm, for example, about 40 μm to about 70 μm, for example, about 40 μm to about 60 μm. The average particle diameter is defined as D50 of the heat-expandable particles.

[0197] In an embodiment, the density of the heat-expandable particles can be about 30 kg / m3to about 80 kg / m3 3 , for example, about 35 kg / m3 3 to about 80 kg / m3 3 , for example, about 35 kg / m3 3 to about 75 kg / m3 3 , for example, about 38 kg / m3 3 to about 72 kg / m3 3 , for example, about 40 kg / m3 3 to about 75 kg / m3 3 , for example, about 40 kg / m3 3 to about 72 kg / m3 3 .

[0198] In one embodiment, the blowing agent can include a gas blowing agent. For example, the blowing agent can include a solid blowing agent and a gas blowing agent. Matters related to the solid blowing agent are as described above.

[0199] The gas blowing agent can be injected using a prescribed injection line during mixing of the second urethane-based prepolymer, the solid blowing agent, and the curing agent. The injection rate of the gas blowing agent can be about 0.8 L / min to about 2.0 L / min, for example, about 0.8 L / min to about 1.8 L / min, for example, about 0.8 L / min to about 1.7 L / min, for example, about 1.0 L / min to about 2.0 L / min, for example, about 1.0 L / min to about 1.8 L / min, for example, about 1.0 L / min to about 1.7 L / min.

[0200] The polishing layer composition can further include an additive as necessary. The kind of the additive can include one selected from the group consisting of a surfactant, a pH adjuster, a binder, an antioxidant, a heat stabilizer, a dispersion stabilizer, and combinations thereof. The names of the "surfactant", "antioxidant", and the like are arbitrary names based on the main role of the substance, and each of the respective substances does not necessarily perform only the function of the role limited by the respective names.

[0201] The surfactant is not particularly limited as long as it is a substance that plays a role in preventing the aggregation or overlapping of pores, and the like. For example, the surfactant can include a silicon-based surfactant.

[0202] The surfactant can be used in a content of about 0.2 parts by weight to about 2 parts by weight, based on 100 parts by weight of the second urethane-based prepolymer. Specifically, the content of the surfactant can be about 0.2 parts by weight to about 1.9 parts by weight, for example, about 0.2 parts by weight to about 1.8 parts by weight, for example, about 0.2 parts by weight to about 1.7 parts by weight, for example, about 0.2 parts by weight to about 1.6 parts by weight, for example, about 0.2 parts by weight to about 1.5 parts by weight, for example, about 0.5 parts by weight to 1.5 parts by weight, with respect to 100 parts by weight of the second urethane-based prepolymer. In the case where the content of the surfactant is in the range, pores caused by the gas blowing agent can be stably formed and maintained in the mold.

[0203] The reaction rate adjusting agent, which plays a role in promoting or delaying the reaction, can use a reaction promoter, a reaction retardant, or both, as necessary. The reaction rate adjusting agent can include a reaction promoter. For example, the reaction promoter can be one or more reaction promoters selected from the group consisting of a tertiary amine compound and an organic metal compound.

[0204] Specifically, the reaction rate adjusting agent can include one or more selected from the group consisting of triethylenediamine, dimethyl ethanolamine, tetramethylbutanediamine, 2-methyl-triethylenediamine, dimethylcyclohexylamine, triethylamine, triisopropanolamine, 1,4-diazabicyclo(2,2,2)octane, bis(2-methylaminoethyl)ether, trimethylaminoethanolamine, N,N,N,N,N"-pentamethyldiethylenetriamine, dimethylaminoethylamine, dimethylaminopropylamine, benzyldimethylamine, N-ethylmorpholine, N,N-dimethylaminoethylmorpholine, N,N-dimethylcyclohexylamine, 2-methyl-2-azanorbornane, dibutyl tin dilaurate, stannous octoate, dibutyl tin diacetate, dioctyl tin diacetate, dibutyl tin maleate, dibutyl tin diisooctoate, and dibutyl tin dithiol. Specifically, the reaction rate adjusting agent can include one or more selected from the group consisting of benzyldimethylamine, N,N-dimethylcyclohexylamine, and triethylamine.

[0205] The reaction rate adjusting agent can be used in an amount of about 0.05 parts by weight to about 2 parts by weight, for example, about 0.05 parts by weight to about 1.8 parts by weight, for example, about 0.05 parts by weight to about 1.7 parts by weight, for example, about 0.05 parts by weight to about 1.6 parts by weight, for example, about 0.1 parts by weight to about 1.5 parts by weight, for example, about 0.1 parts by weight to about 0.3 parts by weight, for example, about 0.2 parts by weight to about 1.8 parts by weight, for example, about 0.2 parts by weight to about 1.7 parts by weight, for example, about 0.2 parts by weight to about 1.6 parts by weight, for example, about 0.2 parts by weight to about 1.5 parts by weight, for example, about 0.5 parts by weight to about 1 part by weight, based on 100 parts by weight of the second urethane-based prepolymer 100. When the reaction rate adjusting agent is used in the above content range, the curing reaction rate of the preliminary composition can be appropriately adjusted, and thus a polishing layer having a desired size of pores and hardness can be formed.

[0206] In an embodiment, the polishing layer 10 can have a density of about 0.50 g / cm3to about 1.20 g / cm3, for example, about 0.50 g / cm3to about 1.10 g / cm3, for example, about 0.50 g / cm3to about 1.00 g / cm3, for example, about 0.60 g / cm3to about 0.90 g / cm3, for example, about 0.70 g / cm3to about 0.80 g / cm3. 3 , for example, about 0.50 g / cm 3 to about 1.10 g / cm 3 , for example, about 0.50 g / cm 3 to about 1.00 g / cm 3 , for example, about 0.60 g / cm 3 to about 0.90 g / cm 3 , for example, about 0.70 g / cm 3about 0.90 g / cm3. The polishing layer 10 having the density within the range can provide a polishing surface having appropriate mechanical properties to a polishing object through its polishing surface, as a result of which, while achieving excellent polishing flatness of a polished surface, it can be advantageous to effectively prevent defects such as scratches. In addition, the polishing layer 10 has excellent compatibility of physical properties with mechanical and physical properties of the window 102, minimizing leakage between the polishing layer 10 and the window 102, so that it can be more advantageous in terms of water leakage prevention.

[0207] In an embodiment, the tensile strength of the polishing layer 10 can be about 15 N / mm 2 to about 30 N / mm 2 , for example, about 15 N / mm 2 to about 28 N / mm 2 , for example, about 15 N / mm 2 to about 27 N / mm 2 , for example, about 17 N / mm 2 to about 27 N / mm 2 , for example, about 20 N / mm 2 to about 27 N / mm 2 . The tensile strength is obtained by preparing a sample by processing the polishing layer to a thickness of 2 mm, cutting the width and length to a size of 4 cm x 1 cm, and then measuring the maximum strength value before breaking at a speed of 50 mm / min using a universal testing system (UTM). The polishing layer 10 having the tensile strength within the range can provide a polishing surface having appropriate mechanical properties to a polishing object through its polishing surface, as a result of which, while achieving excellent polishing flatness of a polished surface, it can be advantageous to effectively prevent defects such as scratches. In addition, the polishing layer 10 has excellent compatibility of physical properties with mechanical and physical properties of the window 102, minimizing leakage between the polishing layer 10 and the window 102, so that it can be more advantageous in terms of water leakage prevention.

[0208] In an embodiment, the polishing layer 10 can have an elongation of about 100% or more, for example, about 100% to about 200%, for example, about 110% to about 160%. The elongation is obtained by cutting a sample to a size of 4 cm x 1 cm in width and length after processing the polishing layer to a thickness of 2 mm, and then measuring the maximum deformation length before breaking at a speed of 50 mm / min using a universal testing system (UTM), and expressing the ratio of the maximum deformation length to the original length as a percentage (%). The polishing layer 10 satisfying the range of elongation can provide a polishing surface having appropriate mechanical properties by its polishing surface toward a polishing object, as a result of which, while achieving excellent polishing flatness of a polished surface, it can be advantageous to effectively prevent defects such as scratches. In addition, the polishing layer 10 has excellent compatibility with mechanical and physical properties of the window 102, minimizing leakage between the polishing layer 10 and the window 102, so that it can be more advantageous in terms of water leakage prevention.

[0209] As described above, since the support layer 20 includes the compression portion CR, the polishing pad 100 is provided with improved water leakage prevention function while, at the same time, a buffering effect can be performed to alleviate external pressure and external impact transmitted to a polished surface in a polishing process through the non-compression portion NCR.

[0210] The support layer 20 can include a nonwoven fabric or suede, but is not limited thereto. In an embodiment, the support layer 20 can include a nonwoven fabric. The "nonwoven fabric" refers to a three-dimensional network structure of un-woven fibers. Specifically, the support layer 20 can include a nonwoven fabric and a resin impregnated in the nonwoven fabric.

[0211] The nonwoven fabric, for example, can be a nonwoven fabric including fibers selected from the group consisting of polyester fibers, polyamide fibers, polypropylene fibers, polyethylene fibers, and combinations thereof.

[0212] The resin impregnated in the nonwoven fabric, for example, can include one selected from the group consisting of polyurethane resin, polybutadiene resin, styrene-butadiene copolymer resin, styrene-butadiene-styrene copolymer resin, acrylonitrile-butadiene copolymer resin, styrene-ethylene-butadiene-styrene copolymer resin, silicone rubber resin, polyester-based elastomer resin, polyamide-based elastomer resin, and combinations thereof.

[0213] In an embodiment, the support layer 20 can include a nonwoven fabric including fibers of polyester fibers, in which a resin containing polyurethane resin is impregnated in the polyester fibers. In this case, in a region close to where the window 102 is disposed, an excellent support performance of the support layer 20 for the window 102 can be achieved, and in achieving a residue accumulation function through the aperture, it can be advantageous to safely accumulate the residue accumulated on the uppermost end surface of the support layer 20 without leakage.

[0214] The thickness of the support layer 20 can be, for example, about 0.5 mm to about 2.5 mm, for example, about 0.8 mm to about 2.5 mm, for example, about 1.0 mm to about 2.5 mm, for example, about 1.0 mm to about 2.0 mm, for example, about 1.2 mm to about 1.8 mm. With reference to Figure 2 The thickness of the support layer 20 can be the thickness H1 of the non-compression portion NCR.

[0215] The surface hardness of the support layer 20, for example, the Asker C hardness of the third face 21 can be about 60 to about 80, for example, about 65 to about 80. When the surface hardness on the third face 21 satisfies the range as the Asker C hardness, the polishing layer 10 can sufficiently ensure support rigidity for support, and can exhibit excellent interfacial adhesion with the second face 12 through the second adhesive layer 40.

[0216] The density of the support layer 20 can be about 0.10 g / cm3to about 1.00 g / cm3, for example, about 0.10 g / cm3to about 0.80 g / cm3, for example, about 0.10 g / cm3to about 0.70 g / cm3, for example, about 0.10 g / cm3to about 0.60 g / cm3, for example, about 0.10 g / cm3to about 0.50 g / cm3, for example, about 0.20 g / cm3to about 0.40 g / cm3. The support layer 20 whose density satisfies the range can have an excellent cushioning effect based on the high elastic force of the non-compression portion NCR, and the compression portion CR is compressed at a predetermined compression rate compared to the non-compression portion NCR, and thus can be more advantageous in forming a high-density region. 3 3 3 3 3 3 3 3 The support layer 20 whose density satisfies the range can have an excellent cushioning effect based on the high elastic force of the non-compression portion NCR, and the compression portion CR is compressed at a predetermined compression rate compared to the non-compression portion NCR, and thus can be more advantageous in forming a high-density region.

[0217] ​​​​​​​The compression rate of the support layer 20 can be about 1% to about 20%, for example, about 3% to about 15%, for example, about 5% to about 15%, for example, about 6% to about 14%. The compression rate is calculated according to the formula (T1-T2) / T1*100 by cutting the support layer into 5cm x 5cm (thickness: 2mm) and measuring the thickness of the cushion layer when a stress load of 85g is maintained for 30 seconds from the unloaded state, referred to as T1 (mm), measuring the thickness of the support layer when a stress load of 800g is added and maintained for 3 minutes from the T1 state, referred to as T2 (mm), and calculating the compression rate. Since the compression rate of the support layer 20 measured under the above conditions satisfies the above range, the compression part CR can more advantageously form a high-density region effective for preventing water leakage.

[0218] The compression modulus of the support layer 20 can be about 60% to about 95%, for example, about 70% to about 95%, for example, about 70% to about 92%. For the compression modulus, the support layer is cut into 5cm x 5cm (thickness: 2mm) and the thickness of the cushion layer when a stress load of 85g is maintained for 30 seconds from the unloaded state is measured, referred to as T1 (mm), the thickness of the support layer when a stress load of 800g is added and maintained for 3 minutes from the T1 state is measured, referred to as T2 (mm), the thickness of the support layer when the stress load of 800g is removed from the T2 state and the stress load of 85g is maintained for 1 minute is measured, referred to as T3, and the compression modulus is calculated according to the formula (T3-T2) / (T1-T2)*100. Since the compression modulus of the support layer 20 measured under the above conditions satisfies the above range, the compression part CR can more advantageously form a high-density region effective for preventing water leakage, and at the same time, the elasticity of the support layer 20 can be more advantageous in terms of preventing defects on the polished surface and improving polishing flatness.

[0219] The air leak value of the polishing pad 100, 100', 200 according to an implementation example can be less than about 1 x 10 -2 cc / min (0.001 = 1 mbar), for example, can be less than about 1 x 10 -3 cc / min (0.001 = 1 mbar). Figure 7 is a schematic view illustrating the air leak measurement process of the polishing pad. Referring to Figure 7 , the air leak value is obtained by positioning the holder 300 with respect to the polishing pad at the window peripheral corresponding region on the lower surface of the support layer and sealing, performing a 5-second pressure reduction under -1 bar conditions, maintaining a 10-second pressure reduction state to stabilize, and then measuring the pressure change amount.

[0220] In another embodiment of the present application, there is provided a method for manufacturing a semiconductor device, including the steps of: providing a polishing pad having a polishing layer including a first surface as a polishing surface and a second surface as a back surface thereof, a first through-hole penetrating from the first surface to the second surface, and a window provided in the first through-hole, and polishing a polishing target having a surface to be polished in contact with the first surface while rotating the polishing pad and the polishing target relative to each other under a pressurized condition; the polishing target including a semiconductor substrate, the polishing pad further including a support layer provided on the second surface side of the polishing layer, the support layer including a third surface on the polishing layer side and a fourth surface as a back surface thereof, and including a second through-hole penetrating from the third surface to the fourth surface and connected to the first through-hole, the second through-hole being smaller than the first through-hole, a lowermost end surface of the window being supported by the third surface, a first adhesive layer being included between the lowermost end surface of the window and the third surface, a second adhesive layer being included between the second surface and the third surface and between the lowermost end surface of the window and the third surface, and the support layer including a compression portion in a region corresponding to the lowermost end surface of the window.

[0221] In the method for manufacturing a semiconductor device, all matters related to the polishing pad, not only in the case of being described later, but also even if not described repeatedly, all matters and technical advantages described for the explanation of the above embodiment can be applied identically below. By applying the polishing pad having the above-described characteristics to the method for manufacturing a semiconductor device, a semiconductor device manufactured thereby can ensure high quality based on excellent polishing results of the semiconductor substrate.

[0222] Figure 8 is a schematic view schematically showing the method for manufacturing a semiconductor device of an embodiment. Referring to Figure 8 , the polishing pad 100 can be provided on the platform 120. Referring to Figure 2 and Figure 8 , the polishing pad 100 can be provided on the platform 120 so that the second surface 12 side of the polishing layer 10 faces the platform 120. In another aspect, the polishing pad 100 can be provided on the platform 120 so that the uppermost end surface of the window 102 and the first surface 11 as a polishing surface are exposed as outermost surfaces.

[0223] The polishing object includes a semiconductor substrate 130. The semiconductor substrate 130 can be disposed such that a surface to be polished thereof is in contact with the first surface 11 and the uppermost end surface of the window 102. The surface to be polished of the semiconductor substrate 130 can be in direct contact with the first surface 11 and the uppermost end surface of the window 102, or can be in indirect contact through a slurry or the like having fluidity. In the present specification, "contact" means all cases including direct or indirect contact.

[0224] The semiconductor substrate 130 is polished while being in contact with the first surface 11 and the uppermost end surface of the window 102 and being rotated, with a predetermined load being applied, in a state where it is mounted to a polishing head 160 so that the surface to be polished thereof faces the polishing pad 100. The load with which the surface to be polished of the semiconductor substrate 130 is pressed against the first surface 11 can be selected in a range of, for example, about 0.01 psi to about 20 psi according to the purpose, for example, can be about 0.1 psi to about 15 psi, but is not limited thereto. Since the surface to be polished of the semiconductor substrate 130 is polished while being in contact with the first surface 11 and the uppermost end surface of the window 102 with a load in the above range, it is more advantageous in terms of ensuring the effect of preventing water leakage through the interface therebetween in repeating the process of going back and forth between the first surface 11 and the uppermost end surface of the window 102.

[0225] The semiconductor substrate 130 and the polishing pad 100 can be relatively rotated in a state where the respective polished surfaces and polishing surfaces are in contact with each other. At this time, the rotation direction of the semiconductor substrate 130 and the rotation direction of the polishing pad 100 can be the same or can be opposite. In the present specification, "relative rotation" is explained to include rotation in the same direction as each other or rotation in opposite directions. The polishing pad 100 is rotated along with the rotation of the platen 120 in a state of being mounted on the platen 120, and the semiconductor substrate 130 is rotated along with the rotation of the polishing head 160 in a state of being mounted on the polishing head 160. The rotation speed of the polishing pad 100 can be selected in the range of about 10 rpm to about 500 rpm according to the purpose, for example, can be about 30 rpm to about 200 rpm, but is not limited thereto. The rotation speed of the semiconductor substrate 130 can be about 10 rpm to about 500 rpm, for example, about 30 rpm to about 200 rpm, for example, about 50 rpm to about 150 rpm, for example, about 50 rpm to about 100 rpm, for example, about 50 rpm to about 90 rpm, but is not limited thereto. Since the rotation speeds of the semiconductor substrate 130 and the polishing pad 100 satisfy the range, the flowability of the slurry by the centrifugal force thereof can be associated with the effect of preventing water leakage through the interface between the uppermost end surface of the window 102 and the first surface 11 and is appropriately ensured. That is, since the polishing slurry moves on the first surface 11 and the uppermost end surface of the window 102 with an appropriate flow rate, the amount of polishing slurry leaked through the interface between the uppermost end surface of the window 102 and the first surface 11 is more advantageous in terms of maximizing the water leakage prevention effect of the polishing pad 100 having the multi-level adhesive layer structure of the first adhesive layer 30 and the second adhesive layer 40 and the compression portion structure of the support layer 20.

[0226] The method of manufacturing the semiconductor device can further include a step of supplying a polishing slurry 150 onto the first surface 11. For example, the polishing slurry 150 can be sprayed onto the first surface 11 through a supply nozzle 140. The flow rate of the polishing slurry 150 sprayed through the supply nozzle 140 can be, for example, about 10 ml / min to about 1000 ml / min, for example, can be about 10 ml / min to about 800 ml / min, for example, can be about 50 ml / min to about 500 ml / min, but is not limited thereto. Since the polishing slurry 150 spray flow rate satisfies the range, the polishing slurry moves on the first surface 11 and the uppermost end surface of the window 102 with an appropriate flow rate, the amount of polishing slurry leaked through the interface between the uppermost end surface of the window 102 and the first surface 11 is more advantageous in terms of maximizing the water leakage prevention effect of the polishing pad 100 having the multi-level adhesive layer structure of the first adhesive layer 30 and the second adhesive layer 40 and the compression portion structure of the support layer 20.

[0227] The polishing slurry 150 can include polishing particles, and can include, for example, silica particles or ceria particles as the polishing particles, but is not limited thereto.

[0228] The method of manufacturing the semiconductor device can further include a step of processing the first surface 11 by the dresser 170. The step of processing the first surface 11 by the dresser 170 can be performed simultaneously with the step of polishing the semiconductor substrate 130.

[0229] The dresser 170 can process the first surface 11 while rotating. The rotation speed of the dresser 170 can be, for example, about 50 rpm to about 150 rpm, for example, about 50 rpm to about 120 rpm, for example, about 90 rpm to about 120 rpm.

[0230] The dresser 170 can process the first surface 11 while pressing the first surface 11. The pressing load of the dresser 170 to the first surface 11 can be, for example, about 1 lb to about 10 lb, for example, about 3 lb to about 9 lb.

[0231] The dresser 170 can process the first surface 11 while performing a vibration motion in a path reciprocating from the center of the polishing pad 100 to the end of the polishing pad 100. When the vibration motion of the dresser 170 reciprocating from the center of the polishing pad 100 to the end of the polishing pad 100 is calculated as one time, the vibration motion speed of the dresser 170 can be about 10 times / minute (min) to about 30 times / minute, for example, about 10 times / minute to about 25 times / minute, for example, about 15 times / minute to about 25 times / minute.

[0232] In the process of performing polishing, the semiconductor substrate 130 is polished under a condition of pressing the polishing surface, and thus the pore structure or the like exposed as a surface of the first surface 11 as a polishing surface is pressed, and gradually becomes a state in which the surface roughness is low or the like, which is not suitable for polishing. In order to prevent this, the first surface 11 is cut by the dresser 170 having a surface that can be roughened, while the surface state suitable for polishing can be maintained. At this time, when the cut portion of the first surface 11 is not quickly discharged and becomes a residue remaining on the polishing surface, it can become a cause of defects such as scratches on the polished surface of the semiconductor substrate 130. In this regard, by the dresser 170 driving conditions, i.e., the rotation speed and the pressing condition or the like, satisfying the range, the surface structure of the first surface 11 can be maintained to excellently maintain the water leakage prevention effect of the polishing pad 100, while it can be advantageous in securing the defect prevention effect of the polished surface of the semiconductor substrate 130.

[0233] The method of manufacturing the semiconductor device can further include a step of detecting a polishing endpoint of the polished surface of the semiconductor substrate 130 by transmitting light emitted from the light source 180 to and from the window 102. Referring to Figure 2 and Figure 8 Since the second through-hole 201 is connected to the first through-hole 101, light emitted from the light source 180 can ensure a light path through the entire thickness from the uppermost surface to the lowermost surface of the polishing pad 100, and an optical endpoint detection method through the window 102 can be applied.

[0234] As described above, the polishing process applying the polishing pad 100 can be performed while supplying a fluid such as a liquid slurry on the first surface 11, and at this time, components from such a fluid can flow into the interface of the window 102 and the first surface 11. When the fluid components thus flowing pass through the second through-hole 201 to flow into the lower end of the polishing pad 100 and the stage 120, it can cause fixation of the light source 180 or moisture can fill the lowermost surface of the window 102, thus hindering accurate endpoint detection. In this regard, the polishing pad 100 ensures a support surface of the window 102 on the third surface 21 by forming the second through-hole 201 to be smaller than the first through-hole 101, and at the same time, forms a multi-stage adhesive layer including the first adhesive layer 30 and the second adhesive layer 40 on the support surface, and provides a compression portion CR in a region of the support layer 20 corresponding to the lowermost surface of the window 102, thus effectively preventing the phenomenon that fluid components from the polishing slurry 150 or the like flow into the lower end of the stage 120 or moisture fills the lowermost surface of the window 102.

[0235] Hereinafter, specific embodiments of the present application will be presented. However, the embodiments described below are merely for specific examples or illustration of the present application, and the scope of the rights of the present application is not limited by the interpretation thereof, and the scope of the rights of the present application is determined by the claims.

[0236] Preparation Example

[0237] Preparation Example 1: Preparation of a polishing layer composition

[0238] With respect to a total of 100 parts by weight of a diisocyanate component, 72 parts by weight of 2,4-TDI, 18 parts by weight of 2,6-TDI, and 10 parts by weight of H 12MDI. 90 parts by weight of PTMG and 10 parts by weight of DEG were mixed with respect to total 100 parts by weight of the polyol component. The mixed raw material was prepared by mixing 148 parts by weight of the polyol component with respect to total 100 parts by weight of the diisocyanate component. After the mixed raw material was charged into a four-necked flask, a polishing layer composition including urethane-based prepolymer and having an isocyanate group content (NCO%) of 9.3% by weight was prepared by conducting a reaction at 80°C.

[0239] Preparation Example 2: Preparation of window composition

[0240] With respect to total 100 parts by weight of the diisocyanate component, 64 parts by weight of 2,4-TDI, 16 parts by weight of 2,6-TDI, and 20 parts by weight of H 12 MDI. 47 parts by weight of PTMG, 47 parts by weight of PPG, and 6 parts by weight of DEG were mixed with respect to total 100 parts by weight of the polyol component. The mixed raw material was prepared by mixing 180 parts by weight of the polyol component with respect to total 100 parts by weight of the diisocyanate component. After the mixed raw material was charged into a four-necked flask, a window composition including urethane-based prepolymer and having an isocyanate group content (NCO%) of 8% by weight was prepared by conducting a reaction at 80°C.

[0241] Examples and Comparative Examples

[0242] Example 1

[0243] With respect to 100 parts by weight of the polishing layer composition of Preparation Example 1, 1.0 parts by weight of a solid blowing agent (Nouryon Co.) was mixed, 4,4'-methylenebis(2-chloroaniline) (MOCA) was mixed as a curing agent, and the molar ratio of amine group (-NH2) of the MOCA was mixed so as to be 0.95 with respect to isocyanate group (-NCO) 1.0 in the polishing layer composition. The polishing layer composition was injected into a mold of 1000 mm in width, 1000 mm in length, and 3 mm in height preheated to 90°C at a discharge rate of 10 kg / min, while nitrogen (N2) was injected as a gas blowing agent at an injection rate of 1.0 L / min. Then, the polishing layer was prepared by conducting a post-curing reaction on the prepared composition at a temperature condition of 110°C. The polishing layer was finish-machined to have a thickness of 2.03 mm, and a groove of a concentric circular structure having a depth of 460 µm, a width of 0.85 mm, and a pitch of 3.0 mm was machined on a polishing surface.

[0244] With respect to 100 parts by weight of the window composition of Production Example 2, 4,4'-methylenebis(2-chloroaniline) (MOCA) was mixed as a curing agent, mixed so that the molar ratio of amine groups (-NH2) of the MOCA was 0.95 with respect to isocyanate groups (-NCO) 1.0 in the polishing layer composition. The window composition was injected into a mold of 1000 mm in width, 1000 mm in length, and 3 mm in height preheated to 90°C, injected at a discharge rate of 10 kg / min, and a window was produced by performing a post-curing reaction under temperature conditions of 110°C. The window was produced so that each thickness satisfied Table 1, and was produced so that the width and the length were 60 mm and 20 mm, respectively.

[0245] A support layer was prepared, having a structure in which a urethane-based resin was impregnated in a nonwoven fabric including polyester resin fibers, and having a thickness of 1.4 mm.

[0246] A first through-hole was formed that penetrated from a first face that was a polishing face of the polishing layer to a second face that was a back face thereof, was formed in a cuboid shape so that the width (width) and the length (length) of the first through-hole were 20 mm and 60 mm, respectively.

[0247] Then, after a bonding film including a thermoplastic urethane-based adhesive was provided on one face (third face) of the support layer, the support layer and the polishing layer were laminated to each other in contact with the second face of the polishing layer, and then hot fusion-bonded at 140°C using a pressure roller, thereby forming a second bonding layer having a thickness of about 27 (±5) μm. Then, by cutting processing from the lowermost end face of the support layer, a second through-hole that penetrated the support layer in the thickness direction was formed, and was produced so that it was formed in a cuboid shape so that the width (width) and the length (length) of the second through-hole were 14 mm and 52 mm, respectively, in a region corresponding to the first through-hole.

[0248] Reference Figure 2Since the second through-hole 201 is formed to be smaller than the first through-hole 101, the width W2 of the upper portion of the second adhesive layer 40 exposed to the outside, the portion corresponding to the width of the window, is 3 mm, and the portion corresponding to the length of the window is 4 mm. Here, after applying a moisture-curable adhesive composition including about 97.75 (±1.25) wt% of urethane-based prepolymer polymerized from monomer components including aromatic diisocyanate of Chemical Formula 1 and polyol and about 2.25 (±1.25) wt% of unreacted aromatic diisocyanate of Chemical Formula 1, it is aged for 2 hours. At this time, the moisture-curable adhesive composition is applied by using a dispenser provided with a supply nozzle having a diameter of 100 μm. Then, the window 102 is disposed in the first through-hole 101 so that the face of the window 102 to which the moisture-curable adhesive composition is applied is supported, and after being pressed at a load of 100 N for 1 second, it is further pressed at a load of 900 N for 10 seconds. Accordingly, the first adhesive layer 30 having a width of 3 mm corresponding to the width of the window and a width of 4 mm corresponding to the length of the window is prepared so that the height difference between the uppermost end face of the window and the first face satisfies the following Table 1.

[0249] At this time, it is prepared so that the first adhesive layer is not disposed between the side face of the window 102 and the side face of the first through-hole 101.

[0250] Then, by pressing the lowermost end face (fourth face) of the support layer 20 in the direction from the side face of the second through-hole 201 toward the inside of the support layer 20, a compression portion CR is formed in a predetermined region. The compression portion CR is pressed to have a thickness of 0.48 mm, and the compression portion CR is formed to have a width of 7.5 mm.

[0251] As a result, a multi-stage adhesive layer including the first adhesive layer 30 and the second adhesive layer on the side of the lowermost end face of the window is prepared, and a polishing pad having a total thickness of the support layer of 3.4 mm including the compression portion CR is prepared.

[0252] Examples 2 to 6

[0253] The thickness of the window is prepared as in the following Table 1, and the recess is prepared in such a manner that the depth d2 from the lowermost end face of the window satisfies the following Table 1, respectively, and the area of the plane of the window, i.e., the width and the length satisfy 13 mm and 30 mm, respectively. When the window is disposed on the first through-hole, it is disposed so that the height difference between the uppermost end face of the window and the first face satisfies the following Table 1 by changing the press load, with reference to Figure 3, except that a polishing pad was prepared in the same manner as in the Example 1, except that, instead of being prepared so that the length LI of the first adhesive layer between the window side and the first through-hole side satisfies the following Table 1, respectively, a wet-curable adhesive composition was not applied when the window was disposed on the first through-hole, and the second through-hole 201 was formed to be smaller than the first through-hole 101, so that the window 102 was directly disposed on the upper portion of the second adhesive layer 40 exposed to the outside, and then pressurized, so that the height difference of the uppermost end surface of the window 102 and the polishing surface 11 satisfies the following Table 1, the window 102 was disposed in the first through-hole 101.

[0254] Comparative Example 1

[0255] The thickness of the window was prepared as in the following Table 1, a wet-curable adhesive composition was not applied when the window was disposed on the first through-hole, and the second through-hole 201 was formed to be smaller than the first through-hole 101, so that the window 102 was directly disposed on the upper portion of the second adhesive layer 40 exposed to the outside, and then pressurized, so that the height difference of the uppermost end surface of the window 102 and the polishing surface 11 satisfies the following Table 1, the window 102 was disposed in the first through-hole 101.

[0256] In addition, as the second adhesive layer 40, an adhesive film including a pressure sensitive adhesive (PSA) was applied instead of an adhesive film including a thermoplastic urethane-based adhesive, and a process of heat-fusing at 140°C by using a pressure roller was excluded.

[0257] In addition, a compression portion CR was not prepared on the lower surface of the support layer 20.

[0258] In addition, a polishing pad was prepared in the same manner as in the Example 1, except that, instead of being prepared so that the length LI of the first adhesive layer between the window side and the first through-hole side satisfies the following Table 1, respectively, a wet-curable adhesive composition was not applied when the window was disposed on the first through-hole, and the second through-hole 201 was formed to be smaller than the first through-hole 101, so that the window 102 was directly disposed on the upper portion of the second adhesive layer 40 exposed to the outside, and then pressurized, so that the height difference of the uppermost end surface of the window 102 and the polishing surface 11 satisfies the following Table 1, the window 102 was disposed in the first through-hole 101. Figure 9A As shown in the following Table 1, a polishing pad was prepared excluding the first adhesive layer 30 and the compression portion CR.

[0259] Comparative Example 2

[0260] The thickness of the window was prepared as in the following Table 1, a wet-curable adhesive composition was not applied when the window was disposed on the first through-hole, and the second through-hole 201 was formed to be smaller than the first through-hole 101, so that the window 102 was directly disposed on the upper portion of the second adhesive layer 40 exposed to the outside, and then pressurized, so that the height difference of the uppermost end surface of the window 102 and the polishing surface 11 satisfies the following Table 1, the window 102 was disposed in the first through-hole 101.

[0261] A compression portion CR was prepared on the lower surface of the support layer 20, the width and thickness H2 of the compression portion CR of the lowermost end surface of the window 102 were prepared as in the following Table 1, an additional compression portion CR' was formed on the area of the lower surface of the support layer 20 corresponding to the periphery of the window 102 to be distinguished therefrom, and was prepared to have the same width and thickness as the compression portion CR. The compression portion CR and the additional compression portion CR' were prepared to be separated by a non-compression portion NCR.

[0262] In addition, a polishing pad was prepared in the same manner as in the above-described Embodiment 1, except that the polishing pad was prepared as shown in FIG. 10, excluding the first adhesive layer 30. Figure 9B In addition, a polishing pad was prepared in the same manner as in the above-described Embodiment 1, except that the polishing pad was prepared as shown in FIG. 10, excluding the first adhesive layer 30.

[0263] Comparative Example 3

[0264] The thickness of the window was prepared as in Table 1 below, and the window was disposed such that the height difference between the polishing surface and the uppermost surface of the window was substantially 0, and a compression portion CR was not prepared on the lower surface of the support layer 20, in the process of disposing the window, excluding the process of applying an additional load of 900 N for 10 seconds after applying a load of 100 N for 1 second.

[0265] In addition, a polishing pad was prepared in the same manner as in the above-described Embodiment 1, except that the polishing pad was prepared as shown in FIG. 10, excluding the first adhesive layer 30. Figure 9C In addition, a polishing pad was prepared in the same manner as in the above-described Embodiment 1, except that the polishing pad was prepared as shown in FIG. 10, excluding the first adhesive layer 30.

[0266] Comparative Example 4

[0267] The thickness of the window was prepared as in Table 1 below, and the window was disposed such that the height difference between the polishing surface and the uppermost surface of the window was substantially 0, and a compression portion CR was not prepared on the lower surface of the support layer 20, in the process of disposing the window, excluding the process of applying an additional load of 900 N for 10 seconds after applying a load of 100 N for 1 second.

[0268] In addition, a polishing pad was prepared in the same manner as in the above-described Embodiment 1, except that the polishing pad was prepared as shown in FIG. 10, excluding the first adhesive layer 30. Figure 9D In addition, a polishing pad was prepared in the same manner as in the above-described Embodiment 1, except that the polishing pad was prepared as shown in FIG. 10, excluding the first adhesive layer 30.

[0269] Evaluation and Measurement

[0270] Measurement Example 1: Evaluation of Polishing Layer and Window Surface Hardness

[0271] A sample was prepared by cutting each of the polishing layer of the Examples and Comparative Examples to a size of 3 cm x 3 cm in width and length. A sample was prepared by cutting each of the window of the Examples and Comparative Examples to a size of 3 cm x 3 cm in width and length. After the sample was stored for 12 hours at a temperature of 25°C, the Shore D hardness was measured using a durometer as the surface hardness in a dry state at normal temperature (S1, S2). In addition, after the window sample was immersed in water at a temperature of 30°C, water at a temperature of 50°C, and water at a temperature of 70°C for 30 minutes, the Shore D hardness was measured using a durometer as the wet hardness at 30°C (S3), the wet hardness at 50°C (S4), and the wet hardness at 70°C (S5), respectively. The results are described in Table 1 below, respectively.

[0272] Measurement Example 2: Water Leakage Test

[0273] The polishing pads of the Examples and Comparative Examples were mounted on a platen of a polishing apparatus (CTS AP300), respectively, and a silicon wafer (TEOS wafer) was mounted on a polishing head, the rotation speed of which was 87 rpm, the pressurized load of which with respect to the polishing pad was 3.5 psi, the rotation speed of the platen was 93 rpm, the injection flow rate of distilled water (DI water) was 200 mL / min, the rotation speed of a conditioner (CI 45) was 101 rpm, and the conditioner vibration motion speed was 19 times / min, and polishing was performed until the groove of the polishing pad was worn, and water leakage was confirmed once every one hour. Then, when condensation occurred at the lowermost end surface of the window or the phenomenon of moisture filling the platen occurred, it was evaluated as “leakage” by visual confirmation, and when this did not occur at all, it was evaluated as “good”. The water leakage test is described in Table 1 below.

[0274] Measurement Example 3: Air Leak Test

[0275] Figure 7 The air leak measurement process of the polishing pad is schematically shown. Referring to Figure 7 , the air leak value was obtained by the following method, with respect to each of the polishing pads of the Examples and Comparative Examples, a jig was disposed on the window peripheral corresponding region of the lower surface of the support layer and sealed, and after 5 seconds of decompression at -1 bar, the pressure change amount was measured after maintaining the decompression condition for 10 seconds to stabilize. The results are described in Table 1 below.

[0276] [Table 1]

[0277]

[0278]

[0279] Referring to the results of Table 1, in the case of the polishing pads of Examples 1 to 6, the lowermost end surface of the window is supported by the third surface of the support layer, and a multi-stage adhesive layer of the first adhesive layer and the second adhesive layer is provided between the lowermost end surface of the window and the third surface of the support layer, and at the same time, the support layer has a compression portion on the region corresponding to the lowermost end surface of the window, thereby showing an air leakage value of less than 10 -2 cc / min, and more particularly, less than 10 -3 cc / min, and can confirm an excellent water leakage test result. In contrast, the polishing pad of Comparative Example 1, which is a polishing pad having no multi-stage adhesive layer structure on the lowermost end surface of the window and having no compression portion of the support layer, shows a serious water leakage in the water leakage test, and in the air leakage measurement, it can be confirmed that the air flow is excessively large to set a reduced pressure condition, and thus shows a very poor water leakage prevention effect. In addition, the polishing pad of Comparative Example 2, which has no multi-stage adhesive layer structure on the lowermost end surface of the window, although there is a compression portion of the support layer, is formed in a region corresponding to the periphery of the window rather than a region corresponding to the lowermost end surface of the window, and thus shows a water leakage in the water leakage test, and in the air leakage measurement result, shows a pressure change amount of about 100 times or more compared to the polishing pads of Examples 1 to 6, and thus can confirm a relatively poor sealing performance.

[0280] As described above, the polishing pad according to an embodiment is a polishing pad capable of detecting an end point by applying a window, and a multi-stage adhesive layer structure is applied to the lowermost end surface of the window, and at the same time, a compression portion is provided in a specific region of the support layer, thereby substantially eliminating a negative factor caused by local heterogeneity of a portion into which the window is introduced, i.e., a water leakage occurrence possibility, maximizing the life of the polishing pad that needs to be replaced after a predetermined period of use, and maximizing the water leakage prevention effect in use of the polishing pad, and thus can be used as a process member capable of manufacturing an excellent semiconductor device.

Claims

1. A polishing pad, wherein, comprises a first face as a polishing face and a second face as a back thereof, and comprises a first through-hole from the first face to the second face, a window disposed in the first through-hole, and a support layer disposed on the second face side of the polishing layer, comprising a third face on the polishing layer side and a fourth face as a back thereof, and comprising a second through-hole from the third face to the fourth face and connected to the first through-hole; the second through-hole is smaller than the first through-hole, a lowermost end face of the window is supported by the third face, a first adhesive layer is included between the lowermost end face of the window and the third face; a second adhesive layer is included between the second face and the third face and between the lowermost end face of the window and the third face; the first adhesive layer and the second adhesive layer are sequentially disposed from the direction of the lowermost end face of the window toward the third face, the first adhesive layer comprises a moisture-cured resin, the support layer comprises a compressed portion in a region corresponding to the lowermost end face of the window, the compressed portion is a continuous compressed region integrally formed by pressing from the fourth face side so as to include all portions corresponding to the lowermost end face of the window, the compressed portion does not include two or more compressed regions having different pressing directions during formation.

2. The polishing pad according to claim 1, wherein the second adhesive layer comprises a thermoplastic resin.

3. The polishing pad according to claim 1, wherein the first adhesive layer is not disposed between the side of the first through-hole and the side of the window.

4. The polishing pad according to claim 1, wherein the first adhesive layer is further disposed between the side of the first through-hole and the side of the window.

5. The polishing pad according to claim 1, wherein the support layer comprises a non-compressed portion in a region other than the compressed portion, a percentage of the thickness of the compressed portion with respect to the thickness of the non-compressed portion is 0.01% to 80%.

6. The polishing pad according to claim 1, wherein the first face comprises at least one groove, a depth of the groove is 100 pm to 1500 pm and a width is 0.1 mm to 20 mm.

7. The polishing pad according to claim 6, wherein the first face comprises a plurality of grooves, the plurality of grooves comprise concentric circular grooves, a spacing between two adjacent grooves among the concentric circular grooves is 2 mm to 70 mm.

8. The polishing pad according to claim 1, wherein the lowermost end face of the window comprises a recess.

9. The polishing pad according to claim 8, wherein a depth of the recess is 0.1 mm to 2.5 mm.

10. The polishing pad according to claim 1, wherein the window comprises a non-foamed cured product of a window composition comprising a first urethane-based prepolymer, the polishing layer comprises a foamed cured product of a polishing layer composition comprising a second urethane-based prepolymer.

11. The polishing pad according to claim 1, wherein a Shore D hardness of the first face measured in a normal temperature dry state is less than a Shore D hardness of an uppermost end face of the window measured in a normal temperature dry state. comprises the steps of:

12. A method of fabricating a semiconductor device, wherein, ​ A polishing pad having a polishing layer including a first face as a polishing surface and a second face as a back surface thereof, a first through-hole penetrating from the first face to the second face, and a window provided in the first through-hole, and A polished surface of a polishing object is brought into contact with the first face, and the polishing object is polished while the polishing pad and the polishing object are rotated relative to each other under a pressurized condition. The polishing object includes a semiconductor substrate, The polishing pad further includes a support layer provided on the second face side of the polishing layer, The support layer includes a third face on the polishing layer side and a fourth face as a back surface thereof, and includes a second through-hole penetrating from the third face to the fourth face and connected to the first through-hole, The second through-hole is smaller than the first through-hole, A lowermost end face of the window is supported by the third face, A first adhesive layer is included between the lowermost end face of the window and the third face, A second adhesive layer is included between the second face and the third face and between the lowermost end face of the window and the third face, The first adhesive layer and the second adhesive layer are sequentially provided from the lowermost end face of the window toward the third face, The first adhesive layer includes a moisture-cured resin, The support layer includes a compression portion in a region corresponding to the lowermost end face of the window, The compression portion is a continuous compression region integrally formed by pressurization from the fourth face side so as to include all portions corresponding to the lowermost end face of the window, The compression portion does not include two or more compression regions having different pressurization directions during formation.

13. The method of producing a semiconductor device according to Claim 12, wherein Further comprising the steps of: A polishing slurry is supplied to the first face; The polishing slurry is ejected onto the first face by a supply nozzle, The flow rate of the polishing slurry ejected by the supply nozzle is 10 to 1000 ml / min.

14. The semiconductor device production method according to claim 12, wherein The rotation speeds of the polishing object and the polishing pad are respectively 10 to 500 rpm.

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