Plasma processing device and adjustment method thereof

Abstract

The present invention discloses a plasma processing apparatus comprising: a vacuum reaction chamber containing a lower electrode assembly; an RF power supply for providing RF power to the lower electrode assembly; an RF transmission element through which the RF power supply provides RF power to the lower electrode assembly; and an electrically grounded shielding sleeve disposed around the periphery of the RF transmission element. The RF transmission element and the shielding sleeve comprise at least two dielectric layers, each of which is capable of relative displacement, the displacement being used to change the facing area between the dielectric layers. Advantageously, the apparatus adjusts the equivalent capacitance at the facing area between the dielectric layers by changing the facing area between the dielectric layers, thereby adjusting the impedance of the frequency-doubled harmonics. This, in turn, influences the spatial distribution of the plasma within the vacuum reaction chamber, allowing for more precise control of the etching rate distribution.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to a plasma processing device and an adjustment method thereof. Background Art

[0002] Plasma processing devices are typically used to process semiconductor substrates and / or plasma flat panel substrates using the operating principle of a vacuum reaction chamber. The vacuum reaction chamber operates by introducing a reaction gas containing an appropriate etchant or deposition source gas into the vacuum reaction chamber, then inputting radio frequency energy into the vacuum reaction chamber to activate the reaction gas, thereby igniting and maintaining a plasma. This allows the material layer on the substrate surface to be etched or deposited on the substrate surface, respectively, thereby processing the semiconductor substrate and plasma flat panel. For example, capacitive plasma reactors have been widely used to process semiconductor substrates and display flat panels. In a capacitive plasma reactor, when radio frequency power is applied to one or both of two electrodes, a capacitive discharge is formed between a pair of parallel electrodes.

[0003] In the plasma treatment process, applying different RF powers can achieve the regulation of different plasma states. Under normal circumstances, in order to ignite and maintain the plasma concentration, the RF power supply needs to input high-frequency RF power, and in order to control the energy of the ions incident on the upper surface of the substrate, the RF power supply also needs to input low-frequency RF power. Both high-frequency and low-frequency RF powers pass through the RF transmission body and eventually flow into the vacuum reaction chamber. In the prior art, the RF frequency output by the RF power supply is mostly 60MHz. The 60MHz RF power actively fed into the cavity will produce 2nd and 3rd harmonics, or even higher harmonics through the nonlinear effect of the plasma, of which the 2nd and 3rd harmonics are: 120MHz and 180MHz higher harmonics. The power of the above-mentioned harmonics will directly affect the spatial distribution of the plasma in the cavity, and is an important contributing factor to the central peak in the W-shaped etching rate distribution in plasma etching.

[0004] Currently, impedance adjustment of frequency-doubled harmonics in the RF circuit is limited to adjusting the impedance of the 60MHz circuit in the RF matching to achieve passive adjustment of the frequency-doubled harmonic impedance. However, this method not only fails to achieve targeted decoupling adjustment, but also causes unexpected problems when changing the 60MHz main frequency impedance, and cannot guarantee sufficient repeatability. Therefore, the industry urgently needs a plasma processing device that can achieve high-frequency harmonic adjustment to obtain an ideal plasma distribution. Summary of the Invention

[0005] The present invention aims to provide a plasma processing device and an adjustment method thereof. The device is provided with an electrically grounded shielding sleeve and at least two dielectric layers around the periphery of a radio frequency transmission body. The dielectric layers can be displaced relative to each other to change the facing area between the dielectric layers, thereby adjusting the equivalent capacitance therein, thereby achieving adjustment of the frequency-doubled high-harmonic impedance, thereby affecting the spatial distribution of the plasma in the vacuum reaction chamber and more accurately controlling the etching rate distribution.

[0006] In order to achieve the above object, the present invention is implemented through the following technical solutions:

[0007] A plasma processing device comprising:

[0008] A vacuum reaction chamber, wherein the vacuum reaction chamber has a lower electrode assembly;

[0009] A radio frequency power supply, used for providing radio frequency power to the lower electrode assembly;

[0010] A radio frequency transmission body, wherein the radio frequency power supply provides radio frequency power to the lower electrode assembly through the radio frequency transmission body;

[0011] An electrically grounded shielding sleeve is arranged around the outer periphery of the radio frequency transmission body. At least two dielectric layers are included between the radio frequency transmission body and the shielding sleeve. The dielectric layers can be displaced relative to each other, and the displacement is used to change the facing area between the dielectric layers.

[0012] Optionally, the dielectric layer is discontinuous in the circumferential direction.

[0013] Optionally, the dielectric layer can move circumferentially or up and down along the shielding sleeve.

[0014] Optionally, the at least two dielectric layers include a plurality of first dielectric layers and second dielectric layers.

[0015] Optionally, the first dielectric layer is a stator, and the first dielectric layer is arranged on a side close to the shielding sleeve;

[0016] The second medium layer is a rotor, which is arranged inside the stator and can rotate relative to the stator.

[0017] Optionally, the first dielectric layer is a rotor, and the first dielectric layer is arranged on a side close to the shielding sleeve;

[0018] The second medium layer is a stator, which is arranged inside the rotor. The rotor can rotate relative to the stator.

[0019] Optionally, the first dielectric layer is a rotor, and the first dielectric layer is arranged on a side close to the shielding sleeve;

[0020] The second medium layer is a rotor, the first medium layer is arranged inside the second medium layer, and the rotors can rotate relative to each other.

[0021] Optionally, the first dielectric layer and the second dielectric layer are made of the same or different materials.

[0022] Optionally, the dielectric layer is made of insulating material and / or conductive material.

[0023] Optionally, the insulating material comprises one or more of polyetheretherketone, tungsten carbon, polyetherimide, quartz, polytetrafluoroethylene or ceramics;

[0024] The conductor material includes one or more of aluminum, stainless steel, copper, aluminum alloy, and copper alloy.

[0025] Optionally, also include:

[0026] A plurality of adjustment members are arranged around the outside of the radio frequency transmission body, and the adjustment members include a plurality of variable irises. The variable irises are arranged around the outside of the radio frequency transmission body, and the extension area of ​​the variable irises is adjusted to change the distance from the variable irises to the radio frequency transmission body.

[0027] Optionally, the adjusting member further comprises:

[0028] An insulating component is arranged in an electrically grounded mounting plate. The insulating component contains a plurality of groove spaces, and each variable iris is respectively arranged in each groove space. The extension and contraction of the variable iris is adjusted to adjust the distance between the variable iris and the radio frequency transmission body.

[0029] Optionally, the variable aperture is in contact with the mounting plate.

[0030] Optionally, the variable aperture is made of a conductive material.

[0031] Optionally, the RF transmission body includes a first RF sub-cable and a second RF sub-cable, wherein the first RF sub-cable is connected to the lower electrode assembly, one end of the second RF sub-cable is connected to the first RF sub-cable, and the other end is connected to an RF power supply, and an angle is formed between the first RF sub-cable and the second RF sub-cable;

[0032] The radio frequency power supply is arranged on a mounting plate, and the second radio frequency sub-cable passes through the mounting plate and is connected to the radio frequency power supply.

[0033] Optionally, the shielding sleeve is arranged on the outside of the first RF sub-cable, the at least two dielectric layers are arranged between the shielding sleeve and the first RF sub-cable, and a plurality of adjustment members are arranged on the outside of the second RF sub-cable.

[0034] Optionally, a radio frequency adjustment method for a plasma processing device includes:

[0035] Adjust each dielectric layer to change the facing area between each dielectric layer.

[0036] Optionally, adjusting each dielectric layer includes:

[0037] The medium layer is rotated in the circumferential direction and / or moved up and down.

[0038] Optionally, the method further comprises:

[0039] Adjust the expansion and contraction area of ​​the variable aperture.

[0040] Optionally, first adjusting the facing areas of the dielectric layers to adjust the equivalent capacitance at the first radio frequency sub-cable;

[0041] The telescopic area of ​​the variable iris is then adjusted to adjust the equivalent capacitance at the second radio frequency sub-cable.

[0042] Compared with the prior art, the present invention has the following advantages:

[0043] In a plasma processing device and its adjustment method of the present invention, the device is provided with an electrically grounded shielding sleeve and at least two dielectric layers on the periphery of a radio frequency transmission body. The dielectric layers can be displaced relative to each other to change the facing area between the dielectric layers, thereby adjusting the equivalent capacitance therein, achieving adjustment of the frequency-doubled high-order harmonic impedance, affecting the spatial distribution of the plasma in the vacuum reaction chamber, and so as to more accurately control the distribution of the (W-shaped) etching rate in plasma etching.

[0044] Furthermore, the device is provided with an adjustment part including a variable iris on the periphery of the RF transmission body. By adjusting the extension and contraction of the variable iris, the equivalent capacitance therein is controlled to realize active adjustment of the RF impedance in the frequency harmonic band, thereby directly affecting the RF power corresponding to the frequency harmonic in the cavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0046] Figure 1 A plasma processing device according to the present invention;

[0047] Figures 2a-2e It is a structural schematic diagram of the first radio frequency sub-cable of the present invention;

[0048] Figure 3 It is a structural schematic diagram of the second radio frequency sub-cable of the present invention;

[0049] Figure 4 This is a structural diagram of the first radio frequency sub-cable in the second embodiment of the present invention. DETAILED DESCRIPTION

[0050] To facilitate understanding of the features, contents, advantages, and effects that can be achieved by the present invention, the present invention is described in detail below in conjunction with the accompanying drawings and in the form of embodiments. The drawings used therein are for illustration and auxiliary description purposes only and may not represent the actual proportions and precise configurations after the implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted to limit the scope of rights of the present invention in actual implementation.

[0051] It should be noted that the drawings are all in very simplified form and use non-precise ratios, and are only used to conveniently and clearly assist in illustrating the embodiments of the present invention.

[0052] Example 1

[0053] like Figure 1 FIG. 1 shows a plasma processing apparatus according to the present invention, which is a capacitively coupled plasma processing apparatus (CCP). The plasma processing apparatus comprises a vacuum reaction chamber 100, which is formed by a generally cylindrical reaction chamber body 101 made of metal material and surrounded by a chamber end cover 102. The reaction chamber body 101 is provided with a substrate transfer port 103, which is used to transfer substrates W between the inside and outside of the vacuum reaction chamber 100. The outside of the substrate transfer port 103 can be connected to the transfer chamber and an airlock chamber (not shown in the figure). The airlock chamber can convert pressure between vacuum and atmospheric pressure to keep the vacuum reaction chamber 100 in a stable state.

[0054] The vacuum reaction chamber 100 includes a base having a supporting surface for supporting the substrate W. The base also serves as a lower electrode assembly 110, which is disposed at the bottom of the vacuum reaction chamber 100. The vacuum reaction chamber 100 also includes an upper electrode assembly 120 disposed opposite the lower electrode assembly 110. The space between the upper electrode assembly 120 and the lower electrode assembly 110 constitutes a processing region where etching is performed on the surface of the substrate W. An ionizable gas or a mixture of process gases is introduced via a gas distribution system 130. For a given process gas flow, a vacuum pumping system 140 is used to adjust the process pressure.

[0055] Optionally, the plasma processing apparatus is connected to one or more RF power supplies 150 to provide RF power to the lower electrode assembly 110 or the upper electrode assembly 120. In embodiments where multiple RF power supplies 150 are connected, each RF power supply 150 can provide a different RF frequency and power than the other RF power supplies 150 to accommodate different processing techniques. For example, in some embodiments, the upper electrode assembly 120 is connected to one RF power supply 150, and the lower electrode assembly 110 is connected to another RF power supply 150, and these two RF power supplies 150 can provide different RF frequencies and powers.

[0056] In this embodiment, the lower electrode assembly 110 is connected to an RF power supply 150. The RF power supply 150 provides RF power to the lower electrode assembly 110 via an RF transmission element 160 to dissociate the process gas into plasma, thereby creating a plasma environment in the processing region between the upper electrode assembly 120 and the lower electrode assembly 110. This plasma environment contains a large number of active species, such as electrons, ions, excited atoms, molecules, and free radicals. These active species can undergo various physical and / or chemical reactions with the surface of the substrate W to be processed, thereby changing the morphology of the substrate W to be processed, thereby completing the processing of the substrate W to be processed.

[0057] In the present invention, the plasma processing device further includes an electrically grounded shielding sleeve 170 (which may be a hollow cylinder). The shielding sleeve 170 is disposed around the outer periphery of the RF transmission body 160. At least two dielectric layers 180 are included between the RF transmission body 160 and the shielding sleeve 170. The dielectric layers 180 can be displaced relative to each other, and the displacement is used to change the facing area between the dielectric layers 180. Figure 1In the plasma processing device shown, there is a first equivalent capacitance C1 between the upper electrode assembly 120 and the lower electrode assembly 110. At the same time, the RF transmission body 160 itself has parasitic inductance, and there is also capacitance between the RF transmission body 160 and the shielding sleeve 170. The RF transmission body 160 and the shielding sleeve 170 are equivalent to the two electrodes of the capacitor, so there is also a second equivalent capacitance C2 here. The parameters of these capacitances and inductances jointly determine the electric field distribution from the output end of the RF power supply 150 to each electrode in the vacuum reaction chamber 100 and each side wall of the reaction chamber body 101, as well as the frequency characteristics of the entire vacuum reaction chamber 100. The present invention simulates the impedance of the chamber and experiments to find that the 120MHz high harmonics are mainly sensitive to the second equivalent capacitance C2, so the 120MHz impedance can be adjusted by adjusting the second equivalent capacitance C2. At the same time, the second equivalent capacitance C2 also affects the high harmonics 180MHz. Therefore, the dielectric layers 180 between the RF transmission body 160 and the shielding sleeve 170 are displaced, changing the dielectric constant between the RF transmission body 160 and the shielding sleeve 170 , thereby changing the second equivalent capacitance C2 , which is beneficial for further adjusting the RF distribution state in the vacuum reaction chamber 100 .

[0058] Furthermore, the RF transmission body 160 includes a plurality of sub-RF transmission bodies, the RF power supply 150 is disposed on an electrically grounded mounting plate 194 , and the sub-RF transmission bodies pass through the mounting plate 194 and are connected to the RF power supply 150 .

[0059] In this embodiment, the RF transmission body 160 is an RF cable, which includes two sub-RF transmission bodies, namely RF sub-cables. Specifically, the two sub-RF transmission bodies are a first RF sub-cable 161 and a second RF sub-cable 162. The first RF sub-cable 161 extends downward from the lower electrode assembly 110, one end of the second RF sub-cable 162 is connected to the bottom of the first RF sub-cable 161, and the other end of the second RF sub-cable 162 is connected to the RF power supply 150. Optionally, there is an angle between the first RF sub-cable 161 and the second RF sub-cable 162. In this embodiment, the angle between the two is a right angle.

[0060] Furthermore, a shielding sleeve 170 is provided around the outside of the first RF sub-cable 161. Several dielectric layers 180 are provided between the first RF sub-cable 161 and the shielding sleeve 170. Each dielectric layer 180 is evenly distributed along the circumference, and each dielectric layer 180 can be displaced relative to each other to change the facing area, i.e., the overlapping area, between each dielectric layer 180. The first RF sub-cable 161 and the shielding sleeve 170 are equivalent to the two electrodes of a capacitor. The dielectric layers 180 and the air contained therein are equivalent to the dielectric between the two electrodes. Changing the overlapping area between the dielectric layers 180 is equivalent to changing the dielectric constant of the dielectric, thereby changing the capacitance of the second equivalent capacitor C2. Therefore, by adjusting the size of the second equivalent capacitor C2, the 120 MHz RF distribution within the vacuum reaction chamber 100 can be primarily affected, while also affecting the 180 MHz RF distribution.

[0061] like Figure 1 、 Figure 2a to Figure 2e As shown in the figure, in this embodiment, the dielectric layers 180 exist in pairs, and the dielectric layers 180 are either the first dielectric layer 181 or the second dielectric layer 182. Optionally, the first dielectric layers 181 and the second dielectric layers 182 are discontinuous in the circumferential direction, that is, there is a certain interval between each of the first dielectric layers 181 in the circumferential direction, and similarly, there is a certain interval between each of the second dielectric layers 182 in the circumferential direction. Three pairs of first dielectric layers 181 and second dielectric layers 182 are included between the first RF sub-cable 161 and the shielding sleeve 170, and each pair of dielectric layers 180 is evenly arranged along the circumferential direction.

[0062] Furthermore, the first dielectric layer 181 is a stator, and the first dielectric layer 181 is arranged on a side close to the shielding sleeve 170. The second dielectric layer 182 is a rotor, and the rotor is arranged inside the stator, and the rotor can rotate relative to the stator. Optionally, the first dielectric layer 181 is a rotor and the second dielectric layer 182 is a stator, or the first dielectric layer and the second dielectric layer are both rotors, the first dielectric layer is arranged inside the second dielectric layer, and the rotors can rotate relative to each other. In this embodiment, the rotor is driven to rotate and move in the circumferential direction by a mechanical drive structure, so that the second equivalent capacitance C2 can be continuously changed. The size of the second equivalent capacitance C2 is adjusted, and then the frequency characteristics of the equivalent circuit are adjusted. Specifically, the second equivalent capacitance C2 can be used to change the impedance of 120MHz and 180MHz in the vacuum reaction chamber 100, where the sensitivity of 120MHz is higher.

[0063] Depending on actual process requirements, the first dielectric layer 181 or the second dielectric layer 182 can optionally move up and down along the shielding sleeve 170. In this embodiment, the second dielectric layer 182, i.e., the rotor, can move up and down relative to the first dielectric layer 181, i.e., the stator. The overlapping area between the first dielectric layer 181 and the second dielectric layer 182 changes accordingly, thereby changing the dielectric constant in the space between the first RF sub-cable 161 and the shielding sleeve 170 to adjust the second equivalent capacitance C2.

[0064] Optionally, the first dielectric layer 181 and the second dielectric layer 182 may be made of the same or different materials; the dielectric layer 180 may be made of an insulating material and / or a conductive material. Optionally, the insulating material may include one or more of polyetheretherketone, tungsten carbon, polyetherimide, quartz, polytetrafluoroethylene, or ceramic; and the conductive material may include one or more of aluminum, stainless steel, copper, an aluminum alloy, or a copper alloy.

[0065] Further, such as Figure 1 and Figure 3 As shown, a third equivalent capacitor C3 exists between the second RF sub-cable 162 and the mounting plate 194. Simulations and experiments on the impedance of the chamber have also revealed that 120 MHz higher harmonics are also sensitive to the third equivalent capacitor C3, but the third equivalent capacitor C3 has no effect on the 180 MHz higher harmonics. Therefore, the 120 MHz impedance can also be adjusted by adjusting the third equivalent capacitor C3. To this end, an adjustment member 190 is disposed around the outside of the second RF sub-cable 162 and is disposed within the electrically grounded mounting plate 194. The adjustment member 190 includes a plurality of variable irises 191 disposed around the outside of the second RF sub-cable 162. The extended area of ​​the variable irises 191 is adjusted to change the distance from the variable irises 191 to the second RF sub-cable 162.

[0066] The structure of the variable iris 191 is similar to the aperture in a camera or the pinhole diaphragm used in an optical system. It is a circular ring with an outer diameter and an inner diameter, and the inner diameter of the circular ring can be continuously scaled.

[0067] In this embodiment, the adjustment member 190 further includes an insulating assembly 192, which is used to securely support the second RF sub-cable 162 and electrically insulate the second RF sub-cable 162 from the mounting plate. The mounting plate has a mounting hole defined along its thickness. The insulating assembly 192 is positioned within the mounting hole of an electrically grounded mounting plate 194. The insulating assembly 192 also has a through-hole defined along its thickness, through which the second RF sub-cable 162 passes and is secured. Optionally, the mounting hole is circular, and the insulating assembly 192 is cylindrical, so that the insulating assembly 192 fits snugly within the mounting hole.

[0068] In this embodiment, a plurality of groove structures 193 are provided in the insulating component 192. The groove structures 193 extend along a direction perpendicular to the thickness of the insulating component 192. Each variable iris 191 is respectively disposed in each groove structure 193 (the variable iris 191 can be configured to be clamped in each groove structure 193). The outer diameter of the variable iris 191 contacts the mounting plate 194 and does not contact the second RF sub-cable 162. The inner diameter of the variable iris 191 is adjusted to expand or contract to adjust the distance between the variable iris 191 and the second RF sub-cable 162.

[0069] In the present invention, the material of the variable aperture 191 is not limited, and it can be made of a conductive material. Optionally, the conductive material includes one or more of aluminum, stainless steel, copper, aluminum alloy, and copper alloy.

[0070] The variable aperture 191 is made of a conductive material. The second RF sub-cable 162 inherently has parasitic inductance. The mounting plate 194 is electrically connected to the variable aperture 191. Therefore, the capacitance between the variable aperture 191 and the second RF sub-cable 162 is the third equivalent capacitance C3. The second RF sub-cable 162 and the variable aperture 191 are equivalent to the two electrodes of a capacitor. Adjusting the distance between the inner diameter of the variable aperture 191 and the second RF sub-cable 162 adjusts the distance between the two electrodes, thereby varying the capacitance of the third equivalent capacitance C3. Therefore, by adjusting the capacitance of the third equivalent capacitance C3, the 120 MHz impedance can be continuously and controllably adjusted, thereby adjusting the 120 MHz RF power within the vacuum reaction chamber 100.

[0071] Optionally, the structure of the variable aperture 191 is not limited to the aforementioned aperture or iris; it may also be other structures that can achieve a desired distance between the variable aperture 191 and the second RF sub-cable 162. In actual use, the extended area of ​​the variable aperture 191 is adjusted according to process requirements to change the size of the third equivalent capacitor C3, thereby affecting the 120 MHz RF frequency and adjusting the RF distribution within the vacuum reaction chamber 100 to achieve optimal process results.

[0072] It should be noted that the outer side of the first RF sub-cable 161 in the present invention is not limited to being provided with a plurality of dielectric layers 180. It can also be provided with a plurality of adjustment members 190 (variable aperture 191) according to actual spatial arrangement requirements. The outer side of the second RF sub-cable 162 is not limited to being provided with a plurality of adjustment members 190. It can also be provided with a shielding sleeve 170 and a plurality of dielectric layers 180 according to actual requirements. As long as the capacitance adjustment of the first RF sub-cable 161 and the second RF sub-cable 162 can be achieved to affect the RF environment in the vacuum reaction chamber 100, no limitation or elaboration will be given here.

[0073] Based on the same inventive concept, the present invention also provides a radio frequency adjustment method for a plasma processing device, which includes: using the above-mentioned plasma processing device; adjusting each dielectric layer 180 to change the facing area between each dielectric layer 180.

[0074] The adjusting of each dielectric layer 180 includes: rotating the dielectric layer 180 in a circumferential direction and / or moving the dielectric layer 180 up and down.

[0075] Furthermore, the method further includes: adjusting the telescopic area of ​​the variable iris 191 .

[0076] Specifically, based on actual process requirements, when adjusting capacitance, the facing area of ​​each dielectric layer 180 is first adjusted to adjust the equivalent capacitance at the first RF sub-cable 161. That is, the second equivalent capacitance C2 is first adjusted to achieve adjustment of the 180 MHz RF frequency within the vacuum reaction chamber 100, while simultaneously achieving coarse adjustment of the 120 MHz RF frequency. Furthermore, the telescopic area of ​​the variable aperture 191 is adjusted to adjust the equivalent capacitance at the second RF sub-cable 162. That is, the third equivalent capacitance C3 is adjusted to achieve adjustment of the 120 MHz RF frequency within the vacuum reaction chamber 100, thereby achieving targeted adjustment of the 120 MHz impedance.

[0077] Example 2

[0078] Based on the structural characteristics of the plasma processing apparatus of the first embodiment, this embodiment makes some changes to the structure of the second equivalent capacitor C2 between the first RF sub-cable 261 and the shielding sleeve 270, mainly to the dielectric layer 280 at the second equivalent capacitor C2.

[0079] like Figure 4As shown, in this embodiment, each dielectric layer 280 exists in pairs, and the dielectric layer 280 is a first dielectric layer 281 or a second dielectric layer 282. Specifically, three pairs of first dielectric layers 281 and second dielectric layers 282 are included between the first RF sub-cable 261 and the shielding sleeve 270, and each pair of dielectric layers 280 is evenly arranged along the circumferential direction.

[0080] Furthermore, the first dielectric layer 281 is a rotor, positioned near the shielding sleeve 270. The second dielectric layer 282 is a stator, positioned within the rotor. The rotor is movable relative to the stator (circumferentially or vertically), driven to rotate or move by a drive device. This structure can further facilitate the placement of other components, depending on the spatial layout requirements of the plasma processing device, to effectively utilize limited space.

[0081] In addition, other structures and functions of various components of this embodiment, such as the upper electrode assembly and the third equivalent capacitor C3, are the same as those in the first embodiment and will not be described in detail here.

[0082] In summary, in the plasma processing device and the adjustment method thereof of the present invention, the plasma processing device is provided with an electrically grounded shielding sleeve 170 and at least two dielectric layers 180 on the periphery of the RF transmission body 160. The dielectric layers 180 can be displaced relative to each other to change the facing area between the dielectric layers 180, thereby adjusting the equivalent capacitance thereat, and realizing impedance adjustment for the frequency harmonic band of the RF power supply 150, so that the plasma processing device can more accurately control the frequency domain distribution of the RF in the vacuum reaction chamber 100, thereby helping to adjust the spatial distribution of the RF plasma in the chamber.

[0083] Furthermore, in the plasma processing device of the present invention, an adjustment member 190 including a variable aperture 191 is provided on the periphery of the RF transmission body 160. By adjusting the expansion and contraction of the variable aperture 191, the equivalent capacitance therein is controlled, thereby affecting the RF impedance of the cavity in the harmonic band (120 MHz).

[0084] Furthermore, in the adjustment method for the plasma processing apparatus of the present invention, the equivalent capacitance at the first RF sub-cable 161 is first adjusted to influence the 180 MHz RF frequency distribution within the cavity, while also achieving coarse adjustment of the 120 MHz RF frequency within the cavity. The telescopic area of ​​the variable aperture 191 at the second RF sub-cable 162 is then adjusted to achieve targeted adjustment of the 120 MHz RF frequency within the cavity, while simultaneously correcting the impedance issues caused by adjusting the equivalent capacitance at the first RF sub-cable 161. This method enables active adjustment of the impedance at 120 MHz and 180 MHz, thereby directly affecting the 120 MHz and 180 MHz RF powers within the cavity.

[0085] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description is not intended to limit the present invention. After reading the above description, various modifications and substitutions of the present invention will become apparent to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A plasma processing device, characterized in that Include: A vacuum reaction chamber, wherein the vacuum reaction chamber has a lower electrode assembly; A radio frequency power supply, used for providing radio frequency power to the lower electrode assembly; A radio frequency transmission body, wherein the radio frequency power supply provides radio frequency power to the lower electrode assembly through the radio frequency transmission body; An electrically grounded shielding sleeve is arranged around the outer periphery of the radio frequency transmission body. At least two dielectric layers are included between the radio frequency transmission body and the shielding sleeve. The dielectric layers can be displaced relative to each other, and the displacement is used to change the facing area between the dielectric layers.

2. The plasma processing apparatus according to claim 1, wherein The dielectric layer is discontinuous in the circumferential direction.

3. The plasma processing apparatus according to claim 1, wherein The dielectric layer can move circumferentially or up and down along the shielding sleeve.

4. The plasma processing apparatus according to claim 1, wherein The at least two dielectric layers include a plurality of first dielectric layers and a second dielectric layer.

5. The plasma processing apparatus according to claim 4, wherein: The first dielectric layer is a stator, and the first dielectric layer is arranged on a side close to the shielding sleeve; The second medium layer is a rotor, which is arranged inside the stator and can rotate relative to the stator.

6. The plasma processing apparatus according to claim 4, wherein: The first dielectric layer is a rotor, and the first dielectric layer is arranged on a side close to the shielding sleeve; The second medium layer is a stator, which is arranged inside the rotor. The rotor can rotate relative to the stator.

7. The plasma processing apparatus according to claim 4, wherein: The first dielectric layer is a rotor, and the first dielectric layer is arranged on a side close to the shielding sleeve; The second medium layer is a rotor, the first medium layer is arranged inside the second medium layer, and the rotors can rotate relative to each other.

8. The plasma processing apparatus according to claim 4, wherein: The first dielectric layer and the second dielectric layer are made of the same or different materials.

9. The plasma processing apparatus according to claim 1 or 7, wherein: The dielectric layer is made of insulating material and / or conductive material.

10. The plasma processing apparatus according to claim 9, wherein The insulating material comprises one or more of polyetheretherketone, tungsten carbon, polyetherimide, quartz, polytetrafluoroethylene or ceramic; The conductor material includes one or more of aluminum, stainless steel, copper, aluminum alloy, and copper alloy.

11. The plasma processing apparatus according to claim 1, wherein Also includes: A plurality of adjustment members are arranged around the outside of the radio frequency transmission body, and the adjustment members include a plurality of variable irises. The variable irises are arranged around the outside of the radio frequency transmission body, and the extension area of ​​the variable irises is adjusted to change the distance from the variable irises to the radio frequency transmission body.

12. The plasma processing apparatus according to claim 11, wherein The adjusting member further comprises: An insulating component is arranged in an electrically grounded mounting plate. The insulating component contains a plurality of groove spaces, and each variable iris is respectively arranged in each groove space. The extension and contraction of the variable iris is adjusted to adjust the distance between the variable iris and the radio frequency transmission body.

13. The plasma processing apparatus according to claim 12, wherein: The variable aperture is in contact with the mounting plate.

14. The plasma processing apparatus according to claim 11, wherein The variable aperture is made of a conductive material.

15. The plasma processing apparatus according to claim 11, wherein The RF transmission body includes a first RF sub-cable and a second RF sub-cable, wherein the first RF sub-cable is connected to the lower electrode assembly, one end of the second RF sub-cable is connected to the first RF sub-cable, and the other end is connected to the RF power supply, and an angle is formed between the first RF sub-cable and the second RF sub-cable; The radio frequency power supply is arranged on a mounting plate, and the second radio frequency sub-cable passes through the mounting plate and is connected to the radio frequency power supply.

16. The plasma processing apparatus according to claim 15, wherein: The shielding sleeve is arranged on the outside of the first radio frequency sub-cable, the at least two dielectric layers are arranged between the shielding sleeve and the first radio frequency sub-cable, and a plurality of adjustment members are arranged on the outside of the second radio frequency sub-cable.

17. A radio frequency adjustment method for a plasma processing device according to any one of claims 1 to 16, characterized in that: The method comprises: Adjust each dielectric layer to change the facing area between each dielectric layer.

18. The radio frequency adjustment method of a plasma processing device according to claim 17, wherein: The adjusting of each dielectric layer comprises: The medium layer is rotated in a circumferential direction and / or moved in an up-down direction.

19. The radio frequency adjustment method of a plasma processing device according to claim 17, wherein: The method further comprises: Adjust the expansion and contraction area of ​​the variable aperture.

20. The radio frequency adjustment method of a plasma processing device according to claim 17, wherein: First adjust the facing area of ​​each dielectric layer; Then adjust the telescopic area of ​​the variable aperture.

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