Thickness measurement of conductive structure elements surrounded by photoresist layers
CN115585744BActive Publication Date: 2026-07-21CAMTEK LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CAMTEK LTD
- Filing Date
- 2019-05-13
- Publication Date
- 2026-07-21
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Figure CN115585744B_ABST
Abstract
A thickness measurement of electrically conductive structure elements surrounded by a photoresist layer is disclosed. A method for estimating a thickness related to a plurality of electrically conductive structure elements of an object, the method comprising estimating a plurality of height differences between an upper surface of an electrically conductive structure element and an upper surface of a photoresist layer portion surrounding the electrically conductive structure element, providing a plurality of height differences; estimating a thickness of a plurality of photoresist layer portions based on at least a second portion of the emitted radiation; and calculating a thickness value related to the plurality of electrically conductive structure elements, wherein the calculation is based on at least the plurality of height differences and on the estimated thickness of the plurality of photoresist layer portions.
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