Etching apparatus and control method thereof
By designing the gas circulation pipe and air pump, the problems of corrosion damage to the etching solution pump bellows and difficulty in discharging the etching solution were solved, thus achieving smooth discharge of the etching solution and improving the safety of the equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZEUS
- Filing Date
- 2022-07-07
- Publication Date
- 2026-07-10
Smart Images
Figure CN115602575B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to an etching apparatus and a control method thereof, and more specifically, to an etching apparatus and a control method thereof, wherein, under pressure in the etching section of the etching apparatus, the etching solution can be smoothly and naturally discharged from the etching chamber to the etching solution supply section. Background Technology
[0002] Typically, the entire semiconductor process includes an etching process, which includes both dry etching and wet etching.
[0003] Dry etching is primarily performed under vacuum conditions using fluorine and inert gases. However, the expensive equipment used for this process limits its commercial application. Therefore, wet etching, which utilizes phosphoric acid, is widely used in contrast to dry etching.
[0004] The wet etching selectively etches the target layer in the target body (substrate, etc.) through the chemical reaction of the etching solution. The etching process is performed by mixing an etching solution with a composition ratio that meets the required characteristics or etching degree.
[0005] Compared to dry etching, wet etching offers further improved job compatibility, with the advantages of being able to process large numbers of objects at once and having a low cost of equipment.
[0006] However, during wet etching, a portion of the etching solution will vaporize, potentially lowering the temperature of the object due to the heat of vaporization. Furthermore, the vaporization of the etching solution makes it difficult to control its concentration, leading to potential losses. Therefore, a method is needed to prevent vaporization of the etching solution within the etching section (e.g., comprising an etching chamber and an etching solution supply section) by applying pressure (i.e., a pressurization system that applies pressure to the etching section at a predetermined pressure) to maintain a constant concentration of the etching solution.
[0007] However, as mentioned above, when pressure is applied to the etching section (i.e., when the etching section is composed of a pressurized system), when the etching liquid pump is driven under high pressure, the pump bellows deforms (e.g., expands) due to the pressure difference and temperature between the inside and outside of the pump, resulting in contact with the inner wall of the pump (e.g., the internal guide). As the pump bellows continues to rub against the inner wall, the components will be damaged (e.g., wear occurs at the friction points of the bellows), thus shortening the lifespan and reducing the pump performance. Ultimately, when the bellows breaks under high temperature and pressure, there is a potential safety hazard.
[0008] Furthermore, as described above, when pressure is applied to the etching section, the pressure in the etching chamber and the etching solution supply section within the etching section will become the same. As a result, there is a problem that the etching solution in the etching chamber is difficult to drain naturally (i.e., even without utilizing the force of the etching solution movement within the etching chamber (e.g., a pump that forces the etching solution to be discharged from the etching chamber to the etching solution supply section), the etching solution can be discharged naturally to the etching solution supply section located at the bottom of the etching chamber by gravity).
[0009] As mentioned above, when the etching chamber is flooded by etching solution due to poor drainage, the process cannot proceed. The etching solution penetrates into the components connected to the etching chamber and causes corrosion or deformation, resulting in damage to the etched part.
[0010] Therefore, there is a need for a technology that can prevent damage to the bellows inside the etching solution pump that transfers etching solution from the etching solution supply section to the etching chamber within the etching section, and that allows the etching solution to flow smoothly and naturally from the etching chamber to the supply section even under pressure in the etching section.
[0011] The background technology of this invention is disclosed in Korean Patent No. 10-0691479 (granted on February 28, 2007, Etching apparatus for large-area substrates). Summary of the Invention
[0012] According to one embodiment of the present invention, the present invention is proposed to solve the problems described above. The object of the present invention is to provide an etching apparatus and a control method thereof, wherein, under pressure in the etching section of the etching apparatus, the etching solution can be smoothly and naturally discharged from the etching chamber to the etching solution supply section.
[0013] An etching apparatus according to one embodiment of the present invention includes: an etching chamber for etching an object with an etching solution; an etching solution supply unit for recovering the etching solution in the etching chamber and supplying the etching solution to the etching chamber by an etching solution pump; a gas circulation pipe formed from a predetermined upper position of the etching solution supply unit to a predetermined upper position of the etching chamber for gas circulation; and an air pump formed on one side of the gas circulation pipe for forced gas circulation.
[0014] The present invention is characterized in that the predetermined position for forming the gas circulation pipe is a predetermined position above the position of the etching solution and above the position where the gas is located.
[0015] The present invention is characterized in that the etching apparatus further includes a control unit for controlling the air pump, wherein when the etching apparatus starts to drive and begins to supply etching solution to the etching chamber through the etching solution pump, the control unit drives the air pump at a predetermined speed.
[0016] The present invention is characterized in that when the supply of etching solution to the etching chamber stops due to the etch device stopping or the etching solution pump stopping, the control unit directly stops the drive of the air pump.
[0017] The invention is characterized in that the etching solution supply unit recovers the etching solution in the etching chamber by gravity-based natural discharge.
[0018] The invention is characterized in that the etching apparatus further includes a valve that operates interactively for the suction operation of a first bellows and a second bellows symmetrically formed inside the etching liquid pump, allowing gas to flow into one of the gas chambers of the first bellows and the second bellows and to discharge gas from the remaining gas chamber.
[0019] The present invention is characterized in that when gas flows into the gas chamber of the first bellows through the valve, the first bellows is activated and the etching solution is discharged to the etching section, and the gas in the gas chamber of the second bellows is discharged through the valve.
[0020] The invention is characterized in that the etching apparatus further includes a back pressure regulating unit connected to the etching solution pump via at least one piping, and the control unit adjusts the pressure applied to the back pressure regulating unit to be the same as the pressure applied to the etching unit, so as to maintain the external pressure and internal pressure of the etching solution pump being the same.
[0021] According to another embodiment of the present invention, the present invention is a control method for an etching apparatus, the etching apparatus comprising: an etching chamber; an etching solution supply unit for supplying etching solution to the etching chamber; a gas circulation pipe configured to connect from a predetermined upper position of the etching solution supply unit to a predetermined upper position of the etching chamber for gas circulation; an air pump formed on one side of the gas circulation pipe for forced gas circulation; and a control unit, the control method comprising the following steps: when the etching apparatus starts to drive and begins to supply etching solution to the etching chamber via the etching solution pump, the control unit drives the air pump at a predetermined speed.
[0022] The present invention is characterized in that the control method of the etching apparatus further includes the following step: when the supply of etching liquid to the etching chamber is stopped due to the stopping of the etching apparatus or the stopping of the etching liquid pump, the control unit directly stops the driving of the air pump.
[0023] The invention is characterized in that the etching solution supply unit recovers the etching solution in the etching chamber by gravity-based natural drainage and supplies the etching solution to the etching chamber by the etching solution pump.
[0024] According to one embodiment of the present invention, under pressurized conditions in the etching section of the etching apparatus, the etching solution can also be smoothly and naturally discharged from the etching chamber to the etching solution supply section. Attached Figure Description
[0025] Figure 1 An illustrative diagram showing a simplified structure of the etching apparatus according to a first embodiment of the present invention.
[0026] Figure 2 An illustrative diagram showing a simplified structure of the etching apparatus according to a second embodiment of the present invention.
[0027] Figure 3 For the purpose of illustrating the control of the Figure 2 A flowchart illustrating the operation of the etching apparatus.
[0028] Figure 4 To illustrate the above Figure 1 An example diagram illustrating the operation of the etching solution pump.
[0029] Figure 5 To illustrate the above Figure 1 An example diagram illustrating the specific structure of the etched section.
[0030] Figure 6 For the purpose of illustrating the control of the Figure 5 A flowchart illustrating the operation of the etching apparatus. Detailed Implementation
[0031] Hereinafter, with reference to the accompanying drawings, an embodiment of the etching apparatus and its control method of the present invention will be described.
[0032] In this process, for clarity and convenience of explanation, the thickness of lines or the size of structural elements shown in the figures may be enlarged. Furthermore, the terminology used below is defined with reference to its function in this invention, and may be changed according to the intentions or conventions of the user, operator, or practitioners. Therefore, the definition of such terminology should be based on the entire contents of this specification.
[0033] Figure 1 An illustrative diagram showing a simplified structure of the etching apparatus according to a first embodiment of the present invention.
[0034] like Figure 1 As shown, the etching apparatus of the first embodiment of the present invention includes an etching unit 110, an etching liquid pump 120, a valve 130, a back pressure regulating unit 140, a first pressure regulating unit 150, a second pressure regulating unit 160, and a control unit 210.
[0035] The etching section 110 includes an etching chamber ( Figure 5 111) and etching solution supply unit ( Figure 5112), by applying the same prescribed pressure to the etching chamber ( Figure 5 111) and the etching solution supply unit ( Figure 5 (112) A pressurization system that applies pressure is formed (refer to) Figure 5 ).
[0036] Figure 5 To illustrate the above Figure 1 A more specific structural illustration of the etched portion is shown in the diagram, which will be specifically referred to when explaining the method for improving the problem of the etched portion 110. Figure 5 Let me explain.
[0037] Refer again Figure 1 The second pressure regulating unit 160 applies pressure to the etching unit 110 by a specified pressure to form and maintain a pressurized environment when etching the object.
[0038] For example, in the second pressure regulating unit 160, pressure is applied to the etching unit 110 via a pipe 161 connected to the etching unit 110, and a new pipe 162 branching from the pipe 161 is connected to the back pressure regulating unit 140. Thus, the same pressure applied to the etching unit 110 is also applied to the back pressure regulating unit 140.
[0039] In the pressurized etching system of this embodiment, the etching solution pump 120 supplies (or circulates) etching solution (or reagent) to the etching section 110 (see reference). Figure 4 ).
[0040] Figure 4 To illustrate the above Figure 1 An example diagram illustrating the operation of the etching solution pump.
[0041] Reference Figure 4 The valve 130 (e.g., a check valve) operates alternately (i.e., alternately) to allow gas (i.e., gas applied by the first pressure regulating section) to flow into (inject) into the gas chamber or to discharge gas that has flowed into (injected) into the gas chamber for the suction operation of the first and second bellows symmetrically formed inside the etching liquid pump 120.
[0042] In this case, the gas may include clean air, such as N2, CO2, Ar, etc., but is not limited to these.
[0043] For example, when gas flows into the gas chamber of the first bellows through the valve 130 (i.e., when gas flows into the gas chamber of the first bellows from the first pressure regulating unit 150 through pipes 125 and 121), the first bellows is activated (suctioned) and the etching solution is discharged to the etching unit 110. In this case, the gas in the gas chamber of the second bellows is discharged through the valve 130 (i.e., the gas in the gas chamber of the second bellows is discharged through pipes 122 and 124 and the back pressure regulating unit 142).
[0044] Conversely, when gas flows into the gas chamber of the second bellows through the valve 130 (i.e., when gas flows into the gas chamber of the second bellows from the first pressure regulating unit 150 through pipes 125 and 122), the second bellows is activated (suctioned) and the etching solution is discharged. In this case, the gas in the gas chamber of the first bellows is discharged through the valve 130 (i.e., the gas in the gas chamber of the first bellows is discharged through pipes 121 and 123 and the back pressure regulating unit 141).
[0045] The back pressure regulating units 141 and 142 are used to regulate the external pressure of the etching solution pump 120. When gas is discharged from the etching solution pump 120, the gas is discharged when the external pressure of the pump (e.g., the pressure surrounding the bellows) is greater than the pressure applied to the back pressure regulating units 141 and 142, thereby maintaining the internal pressure of the etching solution pump 120 (e.g., the pressure at which the bellows is pushed by the pressurized etching solution).
[0046] In this case, such as Figure 4 As shown in part (a), the gas discharged from the etching solution pump 120 can be discharged to different paths through multiple back pressure regulating units 141, 142, in order to save costs, such as Figure 4 As shown in part (b), the gas exhaust pipes 123 and 124 can also be combined into one unit, which includes only one back pressure regulating unit 141.
[0047] As described above, when the gas exhaust pipes 123 and 124 are combined into one and only include a back pressure regulating section 141, it has the effect of saving the regulating section and piping used to apply pressure to the back pressure regulating section 141.
[0048] The first pressure regulating unit 150 injects gas into the first bellows and the second bellows for starting the etching solution pump 120.
[0049] The gas injected through the first pressure regulating unit 150 is injected through the valve 130 into the gas chamber of the first or second bellows of the etching solution pump 120.
[0050] The control unit 210 controls the overall operation of the etching apparatus in this embodiment. Specifically, the control unit 210 controls the first pressure regulating unit 150, the second pressure regulating unit 160, and the third pressure regulating unit (…). Figure 2 (170), etching section 110, etching solution pump 120, and valve 130.
[0051] In particular, the control unit 210 controls the first pressure regulating unit 150 to apply a greater pressure (e.g., 3 bar + 2 bar) than the pressure (e.g., 3 bar) applied by the second pressure regulating unit 160 to the etching unit 110 and the back pressure regulating unit 140.
[0052] Therefore, the control unit 210 can adjust the pressure applied to the back pressure regulating units 140, 141, and 142 (i.e., adjust the pressure of the back pressure regulating units so that the pressure reaches the same pressure applied to the etching unit) to prevent damage to the bellows inside the etching solution pump 120. That is, the external pressure of the etching solution pump 120 (e.g., the pressure surrounding the bellows) and the internal pressure (e.g., the pressure at which the bellows is pushed by the pressurized etching solution) can be kept the same, thereby preventing damage to the bellows by preventing deformation of the bellows or friction of the inner wall.
[0053] Figure 2 This is an illustrative diagram showing a simplified structure of the etching apparatus according to a second embodiment of the present invention. Figure 3 For the purpose of illustrating the control of the Figure 2 A flowchart illustrating the operation of the etching apparatus.
[0054] The Figure 2 The second embodiment shown is the same as the one described. Figure 1 The difference in the first embodiment shown is that an additional third pressure regulating unit 170 is required to apply pressure to the back pressure regulating unit 140.
[0055] That is, refer to Figure 2 The second pressure regulating unit 160 applies pressure only to the etching unit 110 via a pipe 161 connected to apply pressure to the etching unit 110, without the need for a new pipe 162. Instead, the third pressure regulating unit 170 applies pressure to the back pressure regulating unit 140 via a new pipe 171 connected to the back pressure regulating unit 140, and applies the same pressure to the back pressure regulating unit 140 as applied to the etching unit 110.
[0056] The control unit 210 controls the third pressure regulating unit 170 to apply the same pressure (e.g., 3 bar) to the back pressure regulating unit 140 as the pressure applied to the etching unit 110 by the second pressure regulating unit 160.
[0057] Furthermore, the control unit 210 controls the first pressure regulating unit 150 to apply a higher pressure than that applied by the second pressure regulating unit 160 or the third pressure regulating unit 170.
[0058] Reference Figure 3 The control unit 210 detects the pressure information of the second pressure regulating unit 160 (step S101). For this purpose, although not specifically shown in the figure, a pressure detection sensor (not shown) may also be included. Alternatively, preset pressure information may be read from an internal memory (not shown) according to the etching process.
[0059] Furthermore, the control unit 210 adjusts the pressure of the third pressure regulating unit 170 to be the same as the pressure of the second pressure regulating unit 160 (step S102).
[0060] Furthermore, the control unit 210 applies the pressure of the third pressure regulating unit 170 to the back pressure regulating unit 140 (step S103).
[0061] Therefore, the control unit 210 can prevent damage to the bellows inside the etching solution pump 120 by adjusting the pressure applied to the back pressure regulating unit 140 to be the same as the pressure applied to the etching unit 110. That is, the external pressure of the etching solution pump 120 (e.g., the pressure surrounding the bellows) and the internal pressure (e.g., the pressure at which the bellows is pushed by the pressurized etching solution) can be maintained at the same level, thereby preventing damage to the bellows by preventing deformation of the bellows or friction of the inner wall.
[0062] On the other hand, refer to Figure 5 In the etching section 110, which is composed of a pressurized system, an etching solution supply section 112 is arranged at the lower part of the etching chamber 111, so that the etching solution used for etching in the etching chamber 111 is naturally discharged to the etching solution supply section 112 by gravity through the etching solution drain pipe.
[0063] However, because the etching solution drain pipe is thin (narrow), the etching chamber 111 and the etching solution supply section 112 have the same pressure, making it difficult for the etching solution to drain naturally.
[0064] Therefore, in this embodiment, a gas circulation pipe 191 is formed connecting the upper part of the etching solution supply unit 112 (e.g., a predetermined position above the position of the etching solution and the upper part of the gas) to the upper part of the etching chamber 111 (e.g., a predetermined position above the position of the etching solution and the upper part of the gas), and an air pump 190 is formed in the middle of the gas circulation pipe 191.
[0065] The gas may include air, thereby the air pump 190 can force the air, gas, or gas or fuel gas including air to move through the gas circulation pipe 191.
[0066] The air pump 190 forces the gas in the etching solution supply section 112 to move towards the etching chamber 111 (i.e., creating a pressure difference between the two ends of the etching solution supply section 112 and the etching chamber 111), thereby forming a gas circulation path different from the etching solution circulation path. As described above, by using the air pump 190 to force the gas to move, in order to maintain pressure balance (i.e., to eliminate the pressure difference), the etching solution and gas in the etching chamber 111 are discharged to (outflowed to) the etching solution supply section 112 through the etching solution drain pipe.
[0067] Figure 6 For the purpose of illustrating the control of the Figure 5 The flowchart of the operation method of the etching apparatus shown shows that when the etching apparatus starts to drive and the etching liquid is supplied to the etching chamber 111 by the etching liquid pump 120 (example of step S201), the control unit 210 drives the air pump 190 at a predetermined speed (step S202).
[0068] Therefore, as the gas in the etching solution supply section 112 is forced to move into the etching chamber 111, in order to maintain pressure balance, the etching solution and gas in the etching chamber 111 are discharged to the etching solution supply section 112 through the etching solution drain pipe. That is, under the pressurized state of the etching section 110, the etching solution can also be smoothly discharged from the etching chamber 111 to the etching solution supply section 112.
[0069] On the other hand, when the supply of etching solution to the etching chamber 111 stops due to the etch device stopping or the etch solution pump 120 stopping (No in step S201), the control unit 210 directly stops the drive of the air pump 190 (step S203).
[0070] Therefore, the gas in the etching solution supply section 112 will not move to the etching chamber 111, and thus the etching solution and gas in the etching chamber 111 will naturally not be discharged to (out of) the etching solution supply section 112 through the etching solution drain pipe.
[0071] As described above, this embodiment has the following effect: even without using a drain pump (not shown) that forces the etching solution from the etching chamber 111 to the etching solution supply section 112 (i.e., when a drain pump is used, it is difficult to synchronize with the etching solution pump, which causes problems in the etching environment), the etching solution can be smoothly and naturally discharged to the etching solution supply section 112 located at the bottom of the etching chamber 111 by gravity.
[0072] The present invention has been described above with reference to the embodiments shown in the figures. However, these are merely illustrative examples, and those skilled in the art will recognize that various modifications and equivalent embodiments are possible. Therefore, the scope of protection of the present invention should be defined by the claims. Furthermore, for example, the embodiments described in this specification may be embodied as methods or processes, apparatuses, software programs, data streams, or signals. Even when discussed in the context of a single embodiment (e.g., discussed only as a method), the embodiments of the discussed features may be embodied as other forms (e.g., apparatuses or programs). Apparatuses may be embodied as suitable hardware, software, and firmware. For example, a method may be embodied in an apparatus such as a computer, microprocessor, integrated circuit, or processor including a processing device such as a programmable logic device. Processors include communication devices such as computers, mobile phones, portable / personal digital assistants ("PDAs"), and other devices that facilitate information communication between end users.
Claims
1. An etching apparatus, characterized in that, include: Etching chamber, through which the object is etched using etching solution; The etching solution supply unit recovers the etching solution in the etching chamber and supplies the etching solution to the etching chamber via an etching solution pump; A gas circulation pipe is formed to connect from a predetermined upper position above the position of the etching solution supply section to a predetermined upper position above the position of the etching chamber, so as to provide gas circulation; as well as An air pump, formed on one side of the gas circulation pipe, forces the gas to circulate. The etching apparatus further includes: The back pressure regulating unit of the etching solution pump is connected via at least one piping. as well as A control unit that controls the pressure applied to the etching section and the pressure applied to the back pressure regulating section. The control unit adjusts the pressure applied to the back pressure regulating unit to be the same as the pressure applied to the etching unit, so as to maintain the external pressure of the etching solution pump and the internal pressure of the etching solution pump caused by the pressurized etching solution, thereby preventing deformation and damage to the first bellows and the second bellows included in the etching solution pump.
2. The etching apparatus according to claim 1, characterized in that, When the etching apparatus starts to operate and begins to supply etching solution to the etching chamber via the etching solution pump, the control unit drives the air pump at a predetermined speed.
3. The etching apparatus according to claim 2, characterized in that, When the supply of etching solution to the etching chamber stops due to the etch device stopping or the etching solution pump stopping, the control unit directly stops the operation of the air pump.
4. The etching apparatus according to claim 1, characterized in that, The etching solution supply unit recovers the etching solution in the etching chamber through a gravity-based natural drainage method.
5. The etching apparatus according to claim 1, characterized in that, The etching apparatus also includes a valve. The valve operates interactively to facilitate the suction of the first and second bellows symmetrically formed inside the etching pump, allowing gas to flow into one of the gas chambers of the first and second bellows and discharge gas from the remaining gas chamber.
6. The etching apparatus according to claim 5, characterized in that, When gas flows into the gas chamber of the first bellows through the valve, the first bellows is activated and the etching solution is discharged into the etching section, and the gas in the gas chamber of the second bellows is discharged through the valve.
7. A method for controlling an etching apparatus, characterized in that, This refers to the control method of the etching apparatus as described in claim 1. The control method of the etching apparatus includes the following steps: when the etching apparatus starts to drive and begins to supply etching liquid to the etching chamber through the etching liquid pump, the control unit drives the air pump at a predetermined speed.
8. The control method for the etching apparatus according to claim 7, characterized in that, The control method of the etching apparatus further includes the following steps: when the supply of etching liquid to the etching chamber stops due to the stopping of the etching apparatus or the stopping of the etching liquid pump, the control unit directly stops the driving of the air pump.
9. The control method for the etching apparatus according to claim 7, characterized in that, The etching solution supply unit recovers the etching solution in the etching chamber through gravity-based natural drainage and supplies the etching solution to the etching chamber through the etching solution pump.