A single-feed high-frequency ratio three-frequency common-aperture antenna

Abstract

The present invention discloses a single-fed, large-frequency-ratio, three-band, common-aperture antenna, which relates to 5G communication technology. This solution is proposed to solve the problem of low common aperture of three-band antennas in the prior art. The microwave patch antenna unit is mainly placed above the dual-millimeter-wave band antenna unit, so that the dual-millimeter-wave band antenna unit is used as the radiation floor of the microwave patch antenna unit to achieve structural reuse of common aperture. The large rectangular SIW cavity of the dual-millimeter-wave band antenna unit is cleverly divided into four small cavities and four L-shaped radiation slots, which can greatly improve the antenna gain of the dual-millimeter-wave band. The energy is introduced through the cross-slots and metal columns through microstrip single-input feeding, and the CMRC and SIW characteristics are added to the microstrip, so that the high and low frequency isolation is high, and the adjustability of the two antenna units is more flexible. Finally, a common-aperture 5G antenna with single feed, dual radiation units and three-band operation is realized.

Description

Technical Field

[0001] The present invention relates to a triple-band antenna for 5G communication, and in particular to a microwave and dual millimeter wave triple-band antenna. Background Art

[0002] In recent years, technicians have conducted extensive research on millimeter wave technology for 5G communication systems, which can basically meet the goals of high data rate, low latency, compactness, and high capacity and user density for efficient communication. In order to achieve the required ultra-high broadband services, international technical organizations have recommended the use of millimeter wave spectrum, namely 24, 28, 37–39 and 60 GHz. At present, 28 GHz and 38 GHz of the millimeter wave band are the mainstream bands in 5G communication. At the same time, in order to make full use of spectrum resources and realize multi-band radiation of antennas in limited space, the integration of microwave sub-6 GHz band and millimeter wave band antenna units has become a research hotspot for future 5G communications. In particular, the three-band design that integrates sub-6 GHz and dual millimeter wave bands (28 / 38 GHz) is of great value in modern mobile communication systems.

[0003] If antennas working in different frequency bands are separated and placed side by side, this will not only increase the interference between antennas, but also increase the area occupied by the antennas. Generally speaking, antennas with different functions and working in different frequency bands are placed in the same physical aperture plane through some methods to realize their respective applications in different backgrounds. This kind of antenna is called a shared aperture antenna, which has the effect of reducing the antenna footprint.

[0004] Most of the traditional three-band common aperture antennas are three-band antenna designs in the microwave band, or three-band antenna designs in the millimeter wave band, or three-band antenna designs in the microwave dual-band and millimeter wave bands. A small number of them are three-band antennas in the microwave and dual millimeter waves. The existing microwave and dual millimeter wave three-band antennas all use multi-port feeding input, and the feeding structure is complex. In addition, when designing a dual millimeter wave band antenna, they first independently design two millimeter wave antenna units and then piece them together, and finally place them horizontally adjacent to the microwave antenna unit. This results in a low aperture utilization rate of almost zero and a large footprint. For example, in reference Y.Liu, YJLi, L.Ge, et al. "A Compact Hepta-Band Mode-Composite Antenna for Sub (6, 28, and 38) GHz Applications". IEEE Transactions on Antennas and Propagation, 2020, 68 (4): 2593-2602., dual millimeter wave band (28 GHz / 38 GHz) antenna units are first designed independently, and then the dual millimeter wave band antenna units are separated and placed, and then placed adjacently with the microwave band antenna units for combination. The aperture utilization rate is almost zero, the footprint is large, and a multi-port feeding form is adopted. The feeding structure is complex, the high and low frequency gains are low, and the isolation is poor.

[0005] In addition, the isolation measures for microwave and dual millimeter wave bands of existing tri-band antennas mainly use the distance between high and low frequency antenna units to adjust the isolation, but the isolation in this case is poor. It also limits the antenna structure design, the frequency cannot be adjusted, and the flexibility is poor. That is, when the radiation structure of the low-frequency or high-frequency band antenna changes, it will inevitably affect the radiation performance of the antenna in another frequency band. The frequency ratio of microwave and dual millimeter wave is relatively small and limited. When the frequency ratio increases to a certain extent, the interference between antennas increases.

[0006] It can be seen that based on the above background, the existing microwave and dual millimeter wave tri-band antennas use an antenna aperture utilization rate of almost zero working in three different frequency bands, which increases the antenna's footprint; at the same time, the feeding structure adopts a multi-port feeding method, which is complex in structure; the microwave and dual millimeter wave tri-band antennas have low gain, especially the easily affected millimeter wave bands, which are not suitable for long-distance transmission; the isolation between high and low frequency antennas is poor, the frequency design of microwave and dual millimeter wave tri-band antennas is limited, the frequency cannot be adjusted, and the flexibility is poor. The design of one band antenna will inevitably affect the radiation performance of another band antenna, the antenna units have a large impact on each other, and the frequency ratio of microwave and dual millimeter wave bands is relatively small. Summary of the invention

[0007] The object of the present invention is to provide a single-fed large frequency ratio three-frequency common aperture antenna to solve the problems existing in the above-mentioned prior art.

[0008] The single-fed high-frequency-ratio three-frequency common-aperture antenna described in the present invention comprises a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, a third dielectric layer and a third metal layer stacked in sequence; and each layer structure is bilaterally symmetrical along the central axis;

[0009] A feeding microstrip line is laid at the bottom of the first dielectric layer; the feeding microstrip line extends along the central axis, the input end extends to the bottom edge of the first dielectric layer, and the output end extends to a position close to the top edge of the first dielectric layer; the first dielectric layer is also provided with a metal column perpendicular to the radiation plane; one end of the metal column is electrically connected to the output end of the feeding microstrip line, and the other end passes through the first dielectric layer, the first metal layer, the second dielectric layer, the second metal layer, the third dielectric layer and the third metal layer, and is electrically connected to the first metal layer and the third metal layer; a low-pass filter is also provided at a position of the feeding microstrip line close to the metal column;

[0010] The first metal layer is provided with a cross coupling gap between the metal column penetration point and the bottom edge of the layer, the intersection of the cross coupling gap coincides with the central axis, and the gap extension direction of the cross coupling gap forms an angle of 45° with the central axis;

[0011] The second dielectric layer is provided with a substrate integrated waveguide cavity between the metal column penetration point and the bottom edge of the layer, and the substrate integrated waveguide cavity is surrounded by a plurality of metal vias arranged regularly; the center position of the substrate integrated waveguide cavity is a coupling zone, and the coupling zone matches the cross coupling gap in a vertical position; the substrate integrated waveguide cavity is evenly divided into four 1 / 4 waveguide cavities by four rows of millimeter wave separation metal vias; the arrangement direction of the left and right rows of millimeter wave separation metal vias is perpendicular to the central axis, and the arrangement direction of the upper and lower rows of millimeter wave separation metal vias coincides with the central axis; each 1 / 4 waveguide cavity is provided with a millimeter wave matching metal via; all metal vias in the second dielectric layer are electrically connected to the second metal layer above and the first metal layer below;

[0012] The second metal layer is in a convex shape, the rectangle near the top edge of this layer is a microwave module, and the rectangle near the bottom edge of this layer is a millimeter wave module; the millimeter wave module is provided with openings that match the metal vias of the second dielectric layer one by one; the millimeter wave module, the second dielectric layer and the first metal layer are stacked to form a rectangular substrate integrated waveguide; the second metal layer is provided with an L-shaped radiation slot at the corresponding position of each of the four 1 / 4 waveguide cavities; a circular slot is provided in the middle of the microwave module, and the circular slot is coaxial with the metal column and maintains a certain distance from the metal column;

[0013] The third dielectric layer is provided with two rows of microwave adjustment metal vias at positions corresponding to the microwave module, and the arrangement direction of the two rows of microwave adjustment metal vias is parallel and symmetrical to the central axis; the microwave adjustment metal vias are electrically connected to the third metal layer above and the second metal layer below; the microwave module is also provided with matching openings at positions below each microwave adjustment metal via;

[0014] The third metal layer is in a concave shape, and the horizontally extending signal transmission section is arranged above the microwave module and extends to both sides perpendicular to the central axis to the outside of the millimeter wave module, and the two ends of the signal transmission section respectively extend radiation sections parallel to the millimeter wave module; the signal transmission section is provided with openings on both sides of the central axis that match each microwave adjustment metal via; two microwave adjustment gaps are also provided between the openings of this layer and the connection points of the metal columns; the two microwave adjustment gaps are symmetrical with respect to the central axis and extend in parallel, and the end close to the bottom edge of this layer is an open structure.

[0015] The slots of the cross-coupling slots extend below the corresponding 1 / 4 waveguide cavities respectively.

[0016] The long arm of the L-shaped radiation slot is perpendicular to the central axis, and the short arm is parallel to the central axis.

[0017] The short arm is connected to an end of the long arm away from the central axis.

[0018] The long arm is wider than the short arm.

[0019] The distance between the feeding microstrip line and the top edge of the first dielectric layer is greater than the distance between the microwave adjustment slot and the top edge of the third metal layer.

[0020] The single-fed high-frequency-ratio three-band common-aperture antenna described in the present invention has the advantage that the antenna gain of the dual millimeter-wave frequency band can be greatly improved by cleverly dividing the large rectangular SIW cavity of the dual millimeter-wave frequency band antenna unit into four small cavities and four L-shaped radiation slots. The cross-coupling slot combined with four rectangular cavities, L-shaped radiation slots and millimeter-wave matching metal vias can simultaneously realize the radiation of dual millimeter waves without the need to design antenna units for the two radiation frequency bands separately.

[0021] To achieve structural reuse, the microwave patch antenna unit is placed above the dual millimeter-wave band antenna unit, so that the dual millimeter-wave band antenna unit serves as the radiation floor of the microwave patch antenna unit. This not only does not increase the antenna's footprint, but also improves the antenna's aperture utilization.

[0022] By adopting the microstrip single-port feeding method, microwave and dual millimeter wave signals are introduced and coupled from the metal column and the cross-coupling slot respectively, which simplifies the complexity of the antenna feeding design and simplifies the feeding structure. A low-pass filter structure CMRC located between the metal column and the cross-coupling slot is added to the feeding microstrip line to suppress the interference of dual millimeter waves on low frequencies. At the same time, the dual millimeter wave frequency band antenna unit utilizes the high pass property of SIW to naturally prevent low-frequency signals from entering it, thereby suppressing the interference of low-frequency signals. In addition, the antenna of the present invention is more flexible in adjustability. When the radiation structure of the dual millimeter wave frequency band antenna unit is changed, the radiation performance of the microwave patch antenna unit will not be affected, and vice versa.

[0023] Ultimately, a co-aperture 5G antenna with a single feed, dual radiation units and three-band operation is realized, so that the three-band antenna has better isolation in the microwave and dual millimeter wave bands. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a front view of a single-fed, large-frequency-ratio, three-frequency, common-aperture antenna described in the present invention.

[0025] Figure 2 It is a rear view of a single-feed large frequency ratio three-frequency common aperture antenna described in the present invention.

[0026] Figure 3 It is an exploded diagram of a single-feed large frequency ratio three-frequency common aperture antenna described in the present invention.

[0027] Figure 4 It is a schematic diagram of stacking the various layers of the single-fed large frequency ratio three-frequency common aperture antenna described in the present invention in a vertical space.

[0028] Figure 5 It is a schematic structural diagram of the first dielectric layer in the present invention.

[0029] Figure 6 It is a schematic structural diagram of the first metal layer in the present invention.

[0030] Figure 7 It is a schematic structural diagram of the second dielectric layer in the present invention.

[0031] Figure 8 It is a schematic structural diagram of the second metal layer in the present invention.

[0032] Fig. 9 It is a schematic structural diagram of the third dielectric layer in the present invention.

[0033] Fig.10 It is a schematic structural diagram of the third metal layer in the present invention.

[0034] Fig.11It is a schematic diagram of the coordination between the metal vias and the connecting rings in the present invention.

[0035] Fig.12 It is a reflection coefficient simulation curve of a single-fed large frequency ratio three-frequency common aperture antenna in the microwave frequency band described in the present invention.

[0036] Fig.13 It is a reflection coefficient simulation curve of a single-fed large frequency ratio three-frequency common aperture antenna in the dual millimeter wave frequency band described in the present invention.

[0037] Fig.14 It is a gain simulation curve of a single-fed large frequency ratio three-frequency common aperture antenna described in the present invention in the microwave frequency band.

[0038] Fig.15 It is a gain simulation curve of a single-fed large frequency ratio three-frequency common aperture antenna described in the present invention in a dual millimeter wave frequency band.

[0039] Fig.16 It is the simulation result of the E-plane radiation pattern of the single-fed large frequency ratio three-frequency common aperture antenna described in the present invention at 5.2GHz.

[0040] Fig.17 It is the simulation result of the H-plane radiation pattern of the single-fed large frequency ratio three-frequency common aperture antenna described in the present invention at 5.2GHz.

[0041] Fig.18 It is the simulation result of the E-plane radiation pattern of the single-fed large frequency ratio three-frequency common aperture antenna described in the present invention at 28GHz.

[0042] Fig.19 It is the simulation result of the H-plane radiation pattern of the single-fed large frequency ratio three-frequency common aperture antenna described in the present invention at 28GHz.

[0043] Fig. 20 It is the simulation result of the E-plane radiation pattern of the single-fed large frequency ratio three-frequency common aperture antenna at 38GHz described in the present invention.

[0044] Fig.21 It is the simulation result of the H-plane radiation pattern of the single-fed large frequency ratio three-frequency common aperture antenna at 38GHz described in the present invention.

[0045] Fig. 22 It is a schematic diagram of the principle of a dual millimeter wave band antenna unit of a single-fed large frequency ratio three-frequency common aperture antenna described in the present invention.

[0046] Reference numerals:

[0047] 10-first dielectric layer: 11-feeding microstrip line, 12-low-pass filter, 13-metal column;

[0048] 20-first metal layer: 21-cross coupling gap;

[0049] 30-second dielectric layer: 31-substrate integrated waveguide cavity, 32-millimeter wave separation metal via, 33-millimeter wave matching metal via, 34-coupling region;

[0050] 40-second metal layer: 42-long arm, 43-short arm, 44-circular slot, 45-coupling part, 46-L-shaped radiation slot, 48-microwave module, 49-millimeter wave module;

[0051] 50-third dielectric layer: 52-microwave regulating metal via;

[0052] 60 - third metal layer: 61 - signal transmission section, 62 - radiation section, 64 - microwave adjustment gap. DETAILED DESCRIPTION

[0053] like Figures 1 to 11 As shown, the single-fed high frequency ratio three-frequency common aperture antenna described in the present invention comprises a first dielectric layer 10, a first metal layer 20, a second dielectric layer 30, a second metal layer 40, a third dielectric layer 50 and a third metal layer 60 which are stacked in sequence. Each layer structure is bilaterally symmetrical along the central axis.

[0054] A feeding microstrip line 11 is laid at the bottom of the first dielectric layer 10. The feeding microstrip line 11 extends along the central axis, with the input end extending to the bottom edge of the first dielectric layer 10 and the output end extending to a position close to the top edge of the first dielectric layer 10. The first dielectric layer 10 is also provided with a metal column 13 perpendicular to the radiation plane. One end of the metal column 13 is electrically connected to the output end of the feeding microstrip line 11, and the other end passes through the first dielectric layer 10, the first metal layer 20, the second dielectric layer 30, the second metal layer 40, the third dielectric layer 50 and the third metal layer 60, and is electrically connected to the first metal layer 20 and the third metal layer 60. A low-pass filter 12 is also provided near the metal column 13 of the feeding microstrip line 11.

[0055] The first metal layer 20 is provided with a cross coupling slot 21 between the point where the metal column 13 penetrates and the bottom edge of the layer, the intersection of the cross coupling slot 21 coincides with the central axis, and the slot extension direction of the cross coupling slot 21 forms an angle of 45° with the central axis. The slots of the cross coupling slot 21 extend below the corresponding 1 / 4 waveguide cavity.

[0056] The second dielectric layer 30 is provided with a substrate integrated waveguide cavity 31 between the penetration point of the metal column 13 and the bottom edge of this layer, and the substrate integrated waveguide cavity 31 is surrounded by a plurality of metal vias arranged regularly. The center position of the substrate integrated waveguide cavity 31 is a coupling area 34, and the coupling area 34 matches the cross coupling gap 21 in a vertical position. The substrate integrated waveguide cavity 31 is evenly divided into four 1 / 4 waveguide cavities by four rows of millimeter wave separation metal vias 32. The arrangement direction of the left and right rows of millimeter wave separation metal vias 32 is perpendicular to the central axis, and the arrangement direction of the upper and lower rows of millimeter wave separation metal vias 32 coincides with the central axis. A millimeter wave matching metal via 33 is provided in each 1 / 4 waveguide cavity. All metal vias in the second dielectric layer 30 are electrically connected to the second metal layer 40 above and the first metal layer 20 below.

[0057] The second metal layer 40 is in a convex shape, the rectangle near the top edge of this layer is a microwave module 48, and the rectangle near the bottom edge of this layer is a millimeter wave module 49. The millimeter wave module 49 is provided with openings that match the metal vias of the second dielectric layer 30 one by one. The millimeter wave module 49, the second dielectric layer 30 and the first metal layer 20 are stacked to form a rectangular substrate integrated waveguide. The second metal layer 40 is provided with an L-shaped radiation slot 46 at the corresponding position of each of the four 1 / 4 waveguide cavities. A circular slot 44 is provided in the middle of the microwave module 48, and the circular slot 44 is coaxial with the metal column 13 and maintains a certain distance from the metal column 13. The long arm 42 of the L-shaped radiation slot 46 is perpendicular to the central axis, and the short arm 43 is parallel to the central axis. The short arm 43 connects the end of the long arm 42 away from the central axis. The width of the long arm 42 is larger than that of the short arm 43.

[0058] The third dielectric layer 50 is provided with two rows of microwave adjustment metal vias 52 at positions corresponding to the microwave modules 48. The arrangement direction of the two rows of microwave adjustment metal vias 52 is parallel to and symmetrical with the central axis. The microwave adjustment metal vias 52 are electrically connected to the third metal layer 60 above and the second metal layer 40 below. The microwave module 48 is also provided with matching openings at positions below each microwave adjustment metal via 52.

[0059] The third metal layer 60 is in a concave shape, and the horizontally extending signal transmission section 61 is arranged above the microwave module 48 and extends perpendicularly to the central axis to the sides to the outside of the millimeter wave module 49. The two ends of the signal transmission section 61 extend radiation sections 62 in parallel to the millimeter wave module 49. The signal transmission section 61 is provided with openings on both sides of the central axis that match the microwave adjustment metal vias 52. Two microwave adjustment gaps 64 are also provided between the openings of this layer and the connection points of the metal pillars 13. The two microwave adjustment gaps 64 are symmetrical and extend in parallel with respect to the central axis, and one end close to the bottom edge of this layer is an open structure. The distance between the feed microstrip line 11 and the top edge of the first dielectric layer 10 is greater than the distance between the microwave adjustment gap 64 and the top edge of the third metal layer 60.

[0060] The central axis described in this embodiment is along Figure 3 The x-axis extends in the middle, and the z-axis is perpendicular to the radiation surface. The main operating frequencies are the sub-6GHz band (5.25GHz-5.85GHz) and dual millimeter wave band (35.6-37.6GHz) / (37.9-38.4GHz) in wireless communications.

[0061] The working principle of a single-fed large frequency ratio three-frequency common aperture antenna described in the present invention is as follows: the first metal layer 20, the second dielectric layer 30 and the millimeter wave module 49 constitute a dual millimeter wave frequency band antenna unit based on a rectangular SIW, the cross-coupling slot 21 receives the dual millimeter wave frequency band signal coupled and introduced from the feeding microstrip line 11, and the L-shaped radiation slot 46 radiates the dual millimeter wave frequency band signal to the outside. The first metal layer 20, the second dielectric layer 30, the second metal layer 40, the third dielectric layer 50 and the third metal layer 60 constitute a microwave frequency band antenna unit, the signal transmission section 61 receives the microwave frequency band signal introduced from the metal column 13, and the radiation section 62 radiates the microwave frequency band signal to the outside. It can be seen that the first metal layer 20, as a common component of the two antenna units, plays a key role in the common aperture design. The specific principle of the low-pass filter 12 is equivalent to the 1 / 2λ cross section in the invention disclosure CN115000692A.

[0062] The substrate integrated waveguide cavity 31 is divided into four 1 / 4 waveguide cavities, and four L-shaped radiation slots 46 symmetrical about the center of the substrate integrated waveguide cavity 31 are etched thereon, which can be used to improve the antenna gain of the dual millimeter wave frequency band. The cross-coupling slot 21 excites the two high-order modes in each 1 / 4 waveguide cavity, causing the high-order modes to resonate. Then the L-shaped radiation slot 46 above the cavity can effectively cut off the surface current of the excited high-order mode, thereby generating dual millimeter wave radiation and achieving high gain. The dual millimeter wave 28 / 38GHz radiation shares the L-shaped radiation slot 46, and there is no need to design antenna units for these two radiation frequency bands separately. The function of the millimeter wave matching metal via 33 is to adjust the frequency and matching of the dual millimeter wave radiation. The dual millimeter wave frequency band antenna unit needs to use a cross-coupling slot 21 to couple the signal from the feeding microstrip line 11. Here, the cross-coupling slot 21 is cleverly used to excite the four cavity modes. As shown specifically Fig. 22 As shown, due to the inclination angle of the feeding slot and the antenna transmitting slot, the antenna working effect is affected. Two mutually orthogonal transmitting slots are designed to ensure that the two high-frequency antennas can work independently without interfering with each other. In addition, in order to ensure that the antenna is in the largest possible excitation state, the slot is fed at an angle of 45° to the horizontal plane. In this way, the cross-coupling slot 21 used for coupling is equivalent to dividing four rectangular slots from its center to four small cavities for coupling and feeding. In this way, the four small cavities are combined to maximize the utilization of the antenna aperture, while also compensating for the insufficiency of the gain not being able to achieve maximum excitation, thereby increasing the antenna gain. Among them, the relatively short and thin short arm 43 is used to adjust the higher center frequency in the dual millimeter wave frequency band, and the relatively long and thick long arm 42 is used to adjust the lower center frequency in the dual millimeter wave frequency band. In this embodiment, the dual millimeter wave frequency band covers at least 26-40GHz, wherein the higher center frequency is 38GHz, and relatively, the lower center frequency is 28GHz.

[0063] The microwave signal is input from the feeding microstrip line 11, and then introduced into the signal transmission section 61 of the microwave frequency band antenna unit through the metal column 13. The function of the two rows of microwave adjustment metal vias 52 is to reduce the cross-polarization of the antenna radiation. Based on the technical concept of structural multiplexing, the dual millimeter wave frequency band antenna unit serves as the floor of the microwave frequency band antenna unit, thereby greatly reducing the footprint of the antenna and improving the aperture utilization. The function of the microwave adjustment gap 64 is to send the microwave energy to the radiation section 62 together with the microwave adjustment metal via 52, and also has the effect of reducing the cross-polarization of the directional pattern.

[0064] In this embodiment, the thickness of the first dielectric layer 10 is selected to be 0.254 mm, and the relative dielectric constant is 2.2. The thickness of the second dielectric layer 30 is selected to be 0.787 mm, and the dielectric constant is 2.2. The thickness of the third dielectric layer 50 is selected to be 0.254 mm, and the dielectric constant is 2.2. The overall cross-sectional height is about 1.295 mm (~0.02λ0@5.2GHz), and the plane size is 40 mm*41 mm (~0.69*0.71λ0 2 @5.2GHz), and simulation is performed based on this parameter. Fig.12 and 13 As shown, the reflection coefficient |S 11 | The bandwidth is less than -10dB. The dual millimeter wave band antenna unit can cover 27.85-28.28GHz and 37.91-38.41GHz, achieving a large frequency ratio f h0 / f L ≥4 and f h1 / f L ≥6; where f h0 It is the higher center frequency of the dual millimeter wave band, 38GHz, f h1 is the lower center frequency of the dual millimeter wave band, 28 GHz, f L The center frequency of the microwave band is 5.2GHz. Fig.14 and 15 They are the simulated gain curves for three center frequencies. It can be seen that the maximum simulated gains of the dual millimeter-wave band antenna unit within the matching frequency band are 10.38dBi and 12.40dBi respectively, and the microwave band gain can reach 6.97dBi. Figures 16 to 21 The radiation patterns of the three center frequencies are shown respectively. It can be seen that the radiation of the three center frequencies has lower cross-polarization and lower radiation sidelobes, and the radiation performance is good.

[0065] For those skilled in the art, various other corresponding changes and deformations can be made according to the technical solutions and concepts described above, and all of these changes and deformations should fall within the protection scope of the claims of the present invention.

Claims

1. A single-feed large frequency ratio three-frequency common aperture antenna, characterized in that: It comprises a first dielectric layer (10), a first metal layer (20), a second dielectric layer (30), a second metal layer (40), a third dielectric layer (50) and a third metal layer (60) which are stacked in sequence; and each layer structure is bilaterally symmetrical along a central axis; A feeding microstrip line (11) is laid at the bottom of the first dielectric layer (10); the feeding microstrip line (11) extends along the central axis, with the input end extending to the bottom edge of the first dielectric layer (10) and the output end extending to a position close to the top edge of the first dielectric layer (10); the first dielectric layer (10) is also provided with a metal column (13) perpendicular to the radiation plane; one end of the metal column (13) is electrically connected to the output end of the feeding microstrip line (11), and the other end passes through the first dielectric layer (10), the first metal layer (20), the second dielectric layer (30), the second metal layer (40), the third dielectric layer (50) and the third metal layer (60), and is electrically connected to the first metal layer (20) and the third metal layer (60); a low-pass filter (12) is also provided at a position close to the metal column (13) of the feeding microstrip line (11); The first metal layer (20) is provided with a cross coupling slit (21) between the penetration point of the metal column (13) and the bottom edge of the layer, the intersection point of the cross coupling slit (21) coincides with the central axis, and the slit extension direction of the cross coupling slit (21) forms an angle of 45° with the central axis; The second dielectric layer (30) is provided with a substrate integrated waveguide cavity (31) between the penetration point of the metal column (13) and the bottom edge of the layer, and the substrate integrated waveguide cavity (31) is formed by a plurality of metal vias arranged regularly and surrounded; the center of the substrate integrated waveguide cavity (31) is a coupling region (34), and the coupling region (34) matches the cross coupling gap (21) in a vertical position; the substrate integrated waveguide cavity (31) is evenly divided into four 1 / 4 waveguide cavities by four rows of millimeter wave separation metal vias (32); The arrangement direction of the left and right rows of millimeter wave separation metal vias (32) is perpendicular to the central axis, and the arrangement direction of the upper and lower rows of millimeter wave separation metal vias (32) coincides with the central axis; a millimeter wave matching metal via (33) is provided in each 1 / 4 waveguide cavity; all metal vias in the second dielectric layer (30) are electrically connected to the upper second metal layer (40) and the lower first metal layer (20); The second metal layer (40) is in a convex shape, the rectangle near the top edge of the layer is a microwave module (48), and the rectangle near the bottom edge of the layer is a millimeter wave module (49); the millimeter wave module (49) is provided with openings that match the metal vias of the second dielectric layer (30) one by one; the millimeter wave module (49), the second dielectric layer (30) and the first metal layer (20) are stacked to form a rectangular substrate integrated waveguide; the second metal layer (40) is provided with an L-shaped radiation slot (46) at the corresponding position of the four 1 / 4 waveguide cavities; a circular slot (44) is provided in the middle of the microwave module (48), and the circular slot (44) is coaxial with the metal column (13) and maintains a certain distance from the metal column (13); The third dielectric layer (50) is provided with two rows of microwave adjustment metal vias (52) at positions corresponding to the microwave modules (48), and the arrangement direction of the two rows of microwave adjustment metal vias (52) is parallel to and symmetrical with the central axis; the microwave adjustment metal vias (52) are electrically connected to the third metal layer (60) above and the second metal layer (40) below; and the microwave module (48) is also provided with matching openings at positions below each microwave adjustment metal via (52); The third metal layer (60) is in a concave shape, and a horizontally extending signal transmission section (61) is arranged above the microwave module (48) and extends perpendicularly to the central axis to both sides to the outside of the millimeter wave module (49), and radiation sections (62) are extended parallel to the millimeter wave module (49) at both ends of the signal transmission section (61); the signal transmission section (61) is provided with openings on both sides of the central axis that match each microwave adjustment metal via (52); two microwave adjustment gaps (64) are also provided between the openings of this layer and the connection point of the metal column (13); the two microwave adjustment gaps (64) are symmetrical with respect to the central axis and extend in parallel, and the end close to the bottom edge of this layer is an open structure.

2. According to claim 1, a single-feed large frequency ratio three-frequency common aperture antenna, characterized in that: The slots of the cross-coupling slots (21) respectively extend below the corresponding 1 / 4 waveguide cavities.

3. According to claim 1, a single-feed large frequency ratio three-frequency common aperture antenna is characterized in that: The long arm (42) of the L-shaped radiation slot (46) is perpendicular to the central axis, and the short arm (43) is parallel to the central axis.

4. According to claim 3, a single-feed large frequency ratio three-frequency common aperture antenna is characterized in that: The short arm (43) is connected to an end of the long arm (42) away from the central axis.

5. According to claim 3, a single-feed large frequency ratio three-frequency common aperture antenna, characterized in that: The width of the long arm (42) is greater than that of the short arm (43).

6. The single-fed high frequency ratio three-frequency common aperture antenna according to claim 1, characterized in that: The distance between the feeding microstrip line (11) and the top edge of the first dielectric layer (10) is greater than the distance between the microwave adjustment slot (64) and the top edge of the third metal layer (60).

Images