Electronic device

Abstract

The application discloses an electronic device, comprising: a first shell and a second shell, the first shell and the second shell are rotationally connected; a touch screen, the touch screen comprises: an ITO film layer, a first dielectric layer and a second dielectric layer; the ITO film layer is connected on an end surface of the first shell and an end surface of the second shell, the ITO film layer has a first area and a second area, the first area is provided with the first dielectric layer on two opposite sides, and the second area is provided with the second dielectric layer on two opposite sides; the dielectric constant of the first dielectric layer is less than the dielectric constant of the ITO film layer, and the dielectric constant of the second dielectric layer is greater than the dielectric constant of the ITO film layer; an antenna is arranged on the first shell and / or the second shell, under the action of the first dielectric layer and the second dielectric layer, when the first shell and the second shell are rotated to form a cavity, the resonant frequency of the cavity is different from the working frequency of the antenna.

Description

Technical Field

[0001] This application belongs to the field of electronic product technology, and specifically relates to an electronic device. Background Technology

[0002] With the development of 5G, the Internet of Things (IoT) is no longer an abstract concept. In the second half of the IoT era, the screen form of electronic devices is constantly changing. From traditional flip screens to smart flat screens, curved screens, waterfall screens, and then to foldable and rollable screens, engineers are using their imagination to continuously outline the future form of electronic devices. Among them, foldable screen electronic devices, through mechanical hinges, connect multiple electronic screens together, achieving a larger display area and bringing users a more immersive experience.

[0003] The evolution of electronic devices from flat screens to foldable screens has not only changed the appearance of electronic devices but also affected antenna layout and performance. However, in existing foldable screen electronic devices, the two screens fold together to form a cavity, whose resonant frequency falls within the operating frequency band of the electronic device. The metal resonance formed by the ITO screens cannot radiate energy, resulting in energy loss in the terminal's useful frequency band. The clutter generated by the unradiated energy will directly affect antenna performance. Summary of the Invention

[0004] This application aims to provide an electronic device that at least solves the problem that the metal resonance formed by the ITO screen of existing foldable electronic devices cannot radiate energy, and the resulting clutter directly affects the antenna performance.

[0005] To solve the above-mentioned technical problems, this application is implemented as follows:

[0006] This application also proposes an electronic device, which includes:

[0007] A first housing and a second housing, wherein the first housing and the second housing are rotatably connected;

[0008] A touchscreen includes an ITO thin film layer, a first dielectric layer, and a second dielectric layer. The ITO thin film layer is connected to one end face of the first housing and one end face of the second housing. The ITO thin film layer has a first region and a second region. The first dielectric layer is disposed on both sides opposite to the first region, and the second dielectric layer is disposed on both sides opposite to the second region. The dielectric constant of the first dielectric layer is less than the dielectric constant of the ITO thin film layer, and the dielectric constant of the second dielectric layer is greater than the dielectric constant of the ITO thin film layer.

[0009] An antenna is disposed on the first housing and / or the second housing; when the first housing and the second housing rotate to form a cavity under the action of the first dielectric layer and the second dielectric layer, the resonant frequency of the cavity is different from the operating frequency of the antenna.

[0010] In the embodiments of this application, an ITO thin film layer in the touch screen is connected to one end face of the first housing and one end face of the second housing. The ITO thin film layer has a first region and a second region. A first dielectric layer with a dielectric constant lower than that of the ITO thin film layer is provided on both sides opposite to the first region, and a second dielectric layer with a dielectric constant greater than that of the ITO thin film layer is provided on both sides opposite to the second region. By providing different first and second dielectric layers on the ITO thin film layer, the frequency at which the antenna is excited during transmission is changed. Under the action of the first and second dielectric layers, when the first and second housings rotate to form a cavity, the resonant frequency of the cavity is different from the operating frequency of the antenna, thereby enabling the radiation of other signals different from the operating frequency, reducing the influence of clutter after the first and second housings are folded, and improving the antenna performance.

[0011] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0012] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0013] Figure 1 This is a schematic diagram of an electronic device in an unfolded state according to an embodiment of this application;

[0014] Figure 2 This is a schematic diagram of an electronic device in a folded state according to an embodiment of this application;

[0015] Figure 3 This is a schematic diagram of the ITO thin film layer corresponding to the first region according to an embodiment of this application;

[0016] Figure 4 This is a schematic diagram of the second region corresponding to the ITO thin film layer according to an embodiment of this application;

[0017] Figure 5 This is a current distribution curve of 1.0 GHz clutter on an ITO thin film layer according to an embodiment of this application;

[0018] Figure 6 This is a current distribution curve of 0.7 GHz clutter on an ITO thin film layer according to an embodiment of this application;

[0019] Figure 7 This is a schematic diagram of an electronic device in a folded state according to another embodiment of this application;

[0020] Figure 8 This is a schematic diagram of the ITO thin film layer corresponding to the first region according to another embodiment of this application;

[0021] Figure 9 This is a schematic diagram of the second region corresponding to the ITO thin film layer according to another embodiment of this application;

[0022] Figure 10 This is a schematic diagram of an inductor circuit provided according to an embodiment of this application;

[0023] Figure label:

[0024] 10. First housing; 20. Second housing; 30. Touch screen; 300. ITO thin film layer; 301. First dielectric layer; 302. Second dielectric layer; 303. First region; 304. Second region; 305. Third dielectric layer; 40. Antenna; 50. Current curve; 51. Zero point; 60. Metal step portion; 70. Inductor element; 80. Adjustment circuit. Detailed Implementation

[0025] The embodiments of this application will now be described in detail. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0026] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0027] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0028] The following is combined with Figures 1 to 4The electronic device described according to embodiments of this application can be a smartphone, game console, tablet computer, e-book reader, or wearable device. Of course, the electronic device can also be other devices, and this embodiment of the invention does not limit the scope of the invention.

[0029] Taking a mobile phone as an example, the electronic device includes: a first housing 10, a second housing 20, a touch screen 30, and an antenna 40. The first housing 10 is rotatably connected to the second housing 20 via a hinge. During the rotation of the first housing 10 and the second housing 20, the electronic device can switch between a folded state and an unfolded state.

[0030] The touchscreen 30 is connected to both one end face of the first housing 10 and one end face of the second housing 20. The touchscreen 30 includes a display screen, which can be disposed on both the first housing 10 and the second housing 20. The display screen is used to display information for electronic devices and can be a flexible screen. The touchscreen 30 includes an ITO thin film layer 300, a first dielectric layer 301, and a second dielectric layer 302. The indium tin oxide (ITO) thin film layer 300, as the main structure of the touchscreen 30, is an n-type semiconductor material with high conductivity, high visible light transmittance, high mechanical hardness, and good chemical stability. The ITO thin film layer 300 is connected to both one end face of the first housing 10 and one end face of the second housing 20, and has a first region 303 and a second region 304. Antenna 40 is disposed on the first housing 10 or the second housing 20, or both. Antenna 40 is generally located on the edge of the first housing 10 and the second housing 20, with the edge of the ITO thin film layer 300 forming a surrounding structure for the display screen. Antenna 40 is used to transmit signals at its operating frequency. When the first housing 10 and the second housing 20 rotate to form a cavity under the action of the first dielectric layer 301 and the second dielectric layer 302, the resonant frequency of the cavity differs from the operating frequency of antenna 40, thus enabling the radiation of signals with frequencies different from the operating frequency.

[0031] like Figure 2As shown, the ITO thin film layer 300, the first housing 10, and the second housing 20 constitute a cavity with a single-sided short circuit and three-sided open circuit. Specifically, after the first housing 10 and the second housing 20 are rotated and folded, the ITO thin film layer 300 folds under the drive of the first housing 10 and the second housing 20, forming a cavity with one end closed and the other three ends open. At this time, the antenna acts as a signal source, and the electromagnetic waves it emits are coupled to the ITO thin film layer 300 through the medium, exciting the cavity mode, which will most likely fall into the operating frequency band and affect the antenna radiation efficiency. Specifically, a careful analysis of the current distribution of the ITO clutter reveals that it is similar to a resonant cavity mode. The electromagnetic field distribution of the 0.7GHz clutter can be equivalently regarded as the basic mode TE101, and the 1.0GHz clutter can be equivalently regarded as the TE102 mode. In addition, the principle of ITO cavity mode clutter generation in the folding machine can be referenced with electromagnetic interference, simplifying the entire clutter formation process into three parts: interference source, propagation path, and the object being interfered with. Correspondingly, electromagnetic energy is emitted by the target antenna, which can be regarded as an interference source. In one cycle, electromagnetic waves reach the cavity formed by ITO through media such as air and glass, exciting it to resonate, confining the energy in the cavity, gradually decreasing until it is completely consumed.

[0032] Therefore, such as Figure 3 As shown, a first dielectric layer 301 is provided on both opposite sides of the first region 303. That is, the bottom of the first region 303 of the ITO thin film layer 300 is disposed on the first housing 10 or the second housing 20 through the first dielectric layer 301, and the first dielectric layer 301 is provided on the top of the first region 303 of the ITO thin film layer 300. Figure 4 As shown, a second dielectric layer 302 is provided on both opposite sides of the second region 304. That is, the bottom of the second region 304 of the ITO thin film layer 300 is disposed on the first housing 10 or the second housing 20 via the second dielectric layer 302, and the second dielectric layer 302 is provided on the top of the second region 304 of the ITO thin film layer 300. The dielectric constant of the first dielectric layer 301 is less than that of the ITO thin film layer 300, used to shift the first frequency signal to a higher frequency. The dielectric constant of the second dielectric layer 302 is greater than that of the ITO thin film layer 300, used to shift the second frequency signal to a lower frequency. By loading the first dielectric layer 301 and the second dielectric layer 302, the equivalent coupling capacitance is affected, thereby changing the excitation frequency. The purpose is to shift clutter out of the band and reduce its impact on the target antenna.

[0033] Specifically, when the electronic device is in its unfolded state, such as Figure 1 As shown, clutter does not directly and significantly affect the target antenna. However, when the electronic device is in a folded state, such as Figure 2As shown, clutter has a significant impact on the target antenna. For 1 GHz clutter (signal frequency 1), which is higher than the operating frequency, a first dielectric layer 301 with a lower dielectric constant than the ITO thin film layer 300 is applied. According to the planar capacitor formula, to shift the 1 GHz clutter to higher frequencies, the smaller the relative dielectric constant εr of the first dielectric layer 301, the smaller its equivalent capacitance C, and the higher the corresponding resonant frequency f. Conversely, for 0.7 GHz clutter (signal frequency 2), which is lower than the operating frequency, a second dielectric layer 302 with a higher dielectric constant than the ITO thin film layer 300 is applied. According to the planar capacitor formula, to shift the 0.7 GHz clutter to lower frequencies, the larger the relative dielectric constant εr of the second dielectric layer 302, the larger its equivalent capacitance C, and the lower the corresponding resonant frequency f. According to the planar capacitor formula, since the dielectric layer is applied to affect the equivalent capacitance C, the modulation effect is better in the electric field strength regions corresponding to different resonant modes of the ITO cavity than in other regions, thus achieving clutter control.

[0034] In the embodiments of this application, an ITO thin film layer in the touch screen is connected to one end face of the first housing and one end face of the second housing. The ITO thin film layer has a first region and a second region. A first dielectric layer with a dielectric constant lower than that of the ITO thin film layer is provided on both sides opposite to the first region, and a second dielectric layer with a dielectric constant greater than that of the ITO thin film layer is provided on both sides opposite to the second region. By providing different first and second dielectric layers on the ITO thin film layer, the frequency at which the antenna is excited during transmission is changed. Under the action of the first and second dielectric layers, when the first and second housings rotate to form a cavity, the resonant frequency of the cavity is different from the operating frequency of the antenna, thereby enabling the radiation of other signals different from the operating frequency, reducing the influence of clutter after the first and second housings are folded, and improving the antenna performance.

[0035] It should be noted that the specific arrangement of the antenna 40 can be adjusted according to requirements. In this embodiment, the antenna 40 extends along the edge of the first housing 10 or the second housing 20, or the antenna 40 extends along the edge of the first housing 10 and the second housing 20. Simultaneously, the antenna 40 is disposed on the first housing 10 or the second housing 20, or simultaneously on both the first housing 10 and the second housing 20, and the antenna 40 is located on at least one side of the ITO thin film layer 300. By providing different first dielectric layers 301 and second dielectric layers 302 on the ITO thin film layer 300, the clutter effect after the first housing 10 and the second housing 20 are folded is reduced, thereby improving the performance of the antenna 40.

[0036] To further reduce the impact of clutter on the antenna, in one example, such as Figures 1 to 4As shown, at least one corner of the ITO thin film layer 300 is a first region 303, and a first dielectric layer 301 is provided on both sides of the ITO thin film layer 300 corresponding to the first region 303. At least one side of the ITO thin film layer is a second region 304, and a second dielectric layer 302 is provided on both sides of the ITO thin film layer 300 corresponding to the second region 304.

[0037] For 1GHz (first frequency signal) noise, such as Figure 5 As shown, the zero point 51 of the current curve 50 is located at the corner of the ITO thin film layer 300. In order to shift the 1GHz clutter to higher frequencies as much as possible, it is necessary to reduce the coupling capacitance C of the ITO thin film layer 300. According to the planar capacitor formula, the equivalent capacitance C can be reduced by setting the dielectric constant of the first dielectric layer 301 and the coupling area. For this purpose, a first region 303 is provided at at least one corner of the ITO thin film layer 300, and a first dielectric layer 301 is provided on both sides of the ITO thin film layer 300 corresponding to the first region 303. The first dielectric layer 301 at the corner reduces the influence of 1GHz clutter on the antenna 40.

[0038] For 0.7GHz (second frequency signal) noise, such as Figure 6 As shown, the zero point 51 of the current curve 50 is located on one side of the ITO thin film layer 300. In order to shift the 0.7GHz clutter to a lower frequency as much as possible, the coupling capacitance C of the ITO thin film layer 300 needs to be increased. According to the planar capacitor formula, the equivalent capacitance C can be increased by setting the dielectric constant of the second dielectric layer 302 and the coupling area. For this purpose, a second region 304 is provided on at least one side of the ITO thin film layer 300, and a second dielectric layer 302 is provided on both sides of the ITO thin film layer 300 corresponding to the second region 304. The second dielectric layer 302 on the side is used to reduce the influence of 0.7GHz clutter on the antenna 40.

[0039] Furthermore, each of the four corners of the ITO thin film layer 300 is a first region 303, and a first dielectric layer 301 is provided on both sides of the ITO thin film layer 300 corresponding to the first region 303. That is, four first dielectric layers 301 are sequentially provided on the four corners of the ITO thin film layer 300. Each side of the ITO thin film layer 300 corresponding to the first housing 10 or the second housing 20 is a second region 304. The second region 304 is located between the two first regions 303 corresponding to the first housing 10 or between the two first regions 303 corresponding to the second housing 20. A second dielectric layer 302 is provided on both sides of the ITO thin film layer 300 corresponding to the second region 304. In this embodiment, a total of two second dielectric layers 302 are provided on both sides of the ITO thin film layer 300.

[0040] In this embodiment, by combining the electromagnetic field distribution of 1GHz (the first frequency signal) clutter and providing first dielectric layers 301 at each of the four corners of the ITO thin film layer 300, the 1GHz clutter can be shifted to a higher frequency. Simultaneously, by combining the electromagnetic field distribution of 0.7GHz (the second frequency signal) clutter and providing second dielectric layers 302 on both sides of the ITO thin film layer 300, the 0.7GHz clutter can be shifted to a lower frequency.

[0041] Based on the above embodiments, in one embodiment, such as Figure 7 and Figure 8 As shown, both the first housing 10 and the second housing 20 are constructed with metal step portions 60. The metal step portions 60 can be made of stainless steel. The ITO thin film layer 300 in the first region 303 is disposed on the metal step portion 60 via a first dielectric layer 301. The ITO thin film layer 300 in the second region 304 is disposed on the metal step portion 60 via a second dielectric layer 302. The ITO thin film layers 300 outside the first and second regions 303 are disposed on the metal step portion 60 via an adhesive layer, which is made of transparent photoresist. That is, except for the first and second regions 303 and 304, other positions on the ITO thin film layer 300 are connected to the metal step portion 60 via an adhesive layer. The first housing 10 and the second housing 20 support and fix the ITO thin film layer 300 through the metal step portions 60.

[0042] In this embodiment, for 1GHz (first frequency signal) clutter, a first dielectric layer 301 with a smaller dielectric constant than that of the ITO thin film layer 300 is loaded. According to the planar capacitance formula, in order to shift the 1GHz clutter to higher frequencies as much as possible, the smaller the relative dielectric constant εr of the first dielectric layer 301, the smaller its equivalent capacitance C, and the higher the corresponding resonant frequency f. Conversely, for 0.7GHz (second frequency signal) clutter, a second dielectric layer 302 with a larger dielectric constant than that of the ITO thin film layer 300 is loaded. According to the planar capacitance formula, in order to shift the 0.7GHz clutter to lower frequencies as much as possible, the larger the relative dielectric constant εr of the second dielectric layer 302, the larger its equivalent capacitance C, and the lower the corresponding resonant frequency f. According to the planar capacitance formula, since the loading of the dielectric is to affect the equivalent capacitance C, the loading has a better modulation effect in the electric field strength regions corresponding to different resonant modes of the cavity formed by ITO than in other regions, thus achieving the modulation of clutter.

[0043] While foldable screens can effectively increase the display area of ​​devices, they also increase the overall weight, almost doubling that of a regular candybar phone. This excessive weight is one of the main reasons for decreased consumer willingness to purchase foldable devices. To address this issue and mitigate the impact of ITO noise, this embodiment provides a first hollow area in the metal step portion 60 corresponding to the first region 303, filled with a first dielectric layer 301. That is, a first hollow area is provided on the stainless steel metal bracket, and due to the presence of the first dielectric layer 301, for 1GHz noise, directly below the projection of its current zero point, the stainless steel bracket of the screen is partially hollowed out and filled with a low-dielectric-constant first dielectric layer 301, reducing the equivalent coupling capacitance C and allowing higher-frequency energy to pass through. This shifts the noise frequency to higher frequencies, away from the target frequency band. Furthermore, while eliminating noise and improving the overall antenna performance, the weight of the stainless steel bracket is effectively reduced, improving the user experience.

[0044] Specifically, referencing the electromagnetic field distribution of 1GHz (first frequency signal) clutter, the four corners of the ITO thin film layer 300 are designated as zero-current points (electric field strength points). A first region 303 is provided at each of the four corners of the ITO thin film layer 300. Correspondingly, the metal step portion 60 of each first region 303 has a first hollowed-out area filled with the first dielectric layer 301. The second dielectric layer 302 in the second region 304 remains unchanged. The first dielectric layer 301 can shift the 1GHz clutter to higher frequencies as much as possible, reducing the coupling capacitance C of the ITO. According to the planar capacitor formula, setting the first dielectric layer 301 can reduce the equivalent capacitance C. When the area S and dielectric constant ε decrease, the equivalent capacitance C decreases simultaneously, allowing higher frequency energy to pass through, shifting the 1GHz clutter frequency to higher frequencies, and achieving clutter control.

[0045] Furthermore, in order to further reduce the overall weight, such as Figure 9 As shown, the metal step portion 60 corresponding to the second region 304 has a second hollowed-out area, which is filled with a second dielectric layer 302. That is, a second hollowed-out area is provided on the stainless steel metal bracket, and due to the presence of the second dielectric layer 302, for 0.7GHz clutter, directly below the projection of its current zero point, the stainless steel bracket of the screen is partially hollowed out and filled with a high-dielectric-constant second dielectric layer 302, increasing the equivalent coupling capacitance C and allowing lower-frequency energy to pass through. This shifts the clutter frequency to lower frequencies, away from the target frequency band. Furthermore, while eliminating clutter effects and improving the overall antenna performance, the weight of the stainless steel bracket can be effectively reduced, improving the user experience.

[0046] Specifically, referencing the electromagnetic field distribution of 0.7 GHz (the second frequency signal), the two sides of the ITO thin film layer 300 are zero-current points (electric field strength points). A second region 304 is provided on both sides of the ITO thin film layer 300, and correspondingly, the metal step portion 60 of each second region 304 has a second hollowed-out region filled with a second dielectric layer 302. The first dielectric layer 301 in the first region 303 remains unchanged. The second dielectric layer 302 can shift the 0.7 GHz clutter to lower frequencies as much as possible, increasing the coupling capacitance C of the ITO, thereby achieving clutter control.

[0047] Because part of the metal step 60 was hollowed out, in order to increase the equivalent coupling capacitance C, such as Figure 8 As shown, the electronic device further includes a third dielectric layer 305. The third dielectric layer 305 is movably disposed in the second hollow area along a direction approaching or moving away from the ITO thin film layer. In one embodiment, the third dielectric layer 305 is brought closer to or moved away from the ITO thin film layer using electromagnetic levitation technology; in another embodiment, the two ends of the third dielectric layer 305 are respectively connected to metal step portions 60, and a gap is left between the middle portion and the second dielectric layer approaching the ITO thin film layer 300. During folding, the third dielectric layer 305 is bent, thereby bringing it closer to or away from the ITO thin film layer 300. The dielectric constant of the third dielectric layer 305 is greater than the dielectric constant of the ITO thin film layer 300.

[0048] The third dielectric layer 305 can be made of copper foil, which is electromagnetically suspended and not connected to the surrounding metal step portion 60. During clutter resonance, the electric field distribution is not limited to the ITO thin film layers 300. According to the formula for a parallel plate capacitor, the suspended copper foil can couple out a capacitor C, which acts as a load. The position of the suspended copper foil in the second hollow area can be controlled as needed to adjust the coupling capacitance of the suspended copper foil.

[0049] In another embodiment, such as Figure 9 and Figure 10As shown, to facilitate control of the dielectric constant, the electronic device also includes a third dielectric layer 305, an inductor 70, and an adjustment circuit 80. The third dielectric layer 305 is disposed in the second cutout area. The inductor 70 is electrically connected to the third dielectric layer 305, and the adjustment circuit 80 is electrically connected to the inductor 70. The adjustment circuit 80 is used to adjust the inductance value of the inductor. The inductance value can be easily controlled by the adjustment circuit 80, thereby adjusting the resonant frequency of the third dielectric layer 305. According to the formula for a parallel plate capacitor, a coupling capacitance C will be generated between this suspended third dielectric layer 305 and the ITO thin film layer 300. The capacitance value can be adjusted by adjusting the dielectric constants of the third dielectric layer 305 and the second dielectric layer 302. At the same time, the third dielectric layer 305 can be connected to a matching topology using a flexible circuit board. By switching different values, the influence of noise can be reduced, allowing the third dielectric layer 305 and the second dielectric layer 302 to act as a filter at 0.7 GHz, destroying noise generation and flexibly controlling the operating frequency of ITO noise.

[0050] In this embodiment, the stainless steel bracket directly below the zero-point projection of the 0.7GHz clutter current is replaced with a lighter third dielectric layer 305 and a second dielectric layer 302. A coupling capacitance C is generated between the third dielectric layer 305 and the ITO thin film layer 300, and an LC resonant circuit is constructed by selecting appropriate components. By selecting a suitable reactance value and adjusting the LC resonant frequency, the clutter effect is further reduced. Furthermore, while eliminating clutter and improving the overall antenna performance, the weight of the stainless steel bracket can be further reduced, improving the user experience.

[0051] It should be noted that the first dielectric layer 301 includes a gas dielectric layer. The gas dielectric layer can use a transparent gas such as air as the dielectric, thereby shifting the noise to higher frequencies as much as possible. The second dielectric layer 302 includes a polymer dielectric layer. The polymer dielectric layer can use a transparent plastic or other dielectric, thereby shifting the noise to lower frequencies as much as possible. The third dielectric layer 305 includes a metal dielectric layer. The metal dielectric layer uses a conductive metal material and is used to adjust the capacitance at corresponding locations, flexibly controlling the operating frequency of the ITO noise.

[0052] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0053] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. An electronic device, characterized in that, include: A first housing and a second housing, wherein the first housing and the second housing are rotatably connected; A touchscreen includes an ITO thin film layer, a first dielectric layer, and a second dielectric layer. The ITO thin film layer is connected to one end face of the first housing and one end face of the second housing. The ITO thin film layer has a first region and a second region. The first dielectric layer is disposed on both sides opposite to the first region, and the second dielectric layer is disposed on both sides opposite to the second region. The dielectric constant of the first dielectric layer is less than the dielectric constant of the ITO thin film layer, and the dielectric constant of the second dielectric layer is greater than the dielectric constant of the ITO thin film layer. An antenna is disposed on the first housing and / or the second housing; when the first housing and the second housing rotate to form a cavity under the action of the first dielectric layer and the second dielectric layer, the resonant frequency of the cavity is different from the operating frequency of the antenna.

2. The electronic device according to claim 1, characterized in that, The ITO thin film layer has at least one corner that is the first region and at least one side that is the second region.

3. The electronic device according to claim 2, characterized in that, The four corners of the ITO thin film layer are the first region, and the two sides of the ITO thin film layer corresponding to the first shell or the second shell are the second region. The second region is located between the two first regions corresponding to the first shell or the second shell.

4. The electronic device according to any one of claims 1-3, characterized in that, Both the first housing and the second housing are provided with metal step portions. The ITO film layer in the first region is disposed on the metal step portion through the first dielectric layer. The ITO film layer in the second region is disposed on the metal step portion through the second dielectric layer. The ITO film layer outside the first region and the second region is disposed on the metal step portion through an adhesive layer.

5. The electronic device according to claim 4, characterized in that, The metal step portion corresponding to the first region is provided with a first hollow area, and the first hollow area is filled with the first medium layer.

6. The electronic device according to claim 4, characterized in that, The metal step portion corresponding to the second region is provided with a second hollow area, and the second hollow area is filled with the second medium layer.

7. The electronic device according to claim 6, characterized in that, The electronic device also includes: A third dielectric layer is movably disposed in the second cutout region along a direction close to or away from the ITO thin film layer; wherein the dielectric constant of the third dielectric layer is greater than the dielectric constant of the ITO thin film layer.

8. The electronic device according to claim 6, characterized in that, The electronic device also includes: A third dielectric layer is disposed in the second cutout area of ​​the inductor element, and the inductor element is electrically connected to the third dielectric layer; An adjustment circuit, which is electrically connected to the inductor, is used to adjust the inductance value of the inductor.

9. The electronic device according to claim 8, characterized in that, The first dielectric layer includes a gas dielectric layer; the second dielectric layer includes a polymer dielectric layer; and the third dielectric layer includes a metallic dielectric layer.

10. The electronic device according to any one of claims 1-3, characterized in that, The antenna extends along the edge of the first housing and / or the second housing.

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