Photosensitive detector and method of manufacture

Abstract

The application discloses a photosensitive detector and a preparation method thereof. The photosensitive detector comprises: a light-absorbing layer, the light-absorbing layer comprises a photosensitive material, and a plurality of grooves are distributed on one side surface of the light-absorbing layer; a first electrode, the first electrode is arranged on the other side of the light-absorbing layer, and the first electrode is a light-transmitting electrode; and a second electrode, the second electrode is arranged on one side of the light-absorbing layer. In the photosensitive detector, the light-absorbing layer comprises the photosensitive material, the plurality of grooves are distributed on one side surface of the light-absorbing layer, the first electrode is arranged on the other side of the light-absorbing layer, the first electrode is the light-transmitting electrode, and the second electrode is arranged on one side of the light-absorbing layer. By arranging the plurality of grooves on the surface of the light-absorbing layer, the reflection of the light-absorbing layer to light can be reduced, multiple light scattering is beneficial to improving the light absorption capacity, and the detection accuracy and sensitivity of the photoelectric detector are improved. The detector has a simple structure and high detection reliability.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of photosensitive detectors, and particularly relates to a photosensitive detector and a preparation method. BACKGROUND

[0002] At present, photoelectric detectors for converting incident light signals into electrical signals play an important role in optical communication, photography, astronomy, environmental sensing, medical analysis and safety equipment. Important characteristics required by photoelectric detectors in practical applications include spectral selectivity, signal-to-noise ratio, sensitivity, stability and manufacturing simplicity. The application materials of traditional photoelectric detectors, such as germanium (Ge), lead sulfide (PbS) and various two-dimensional (2D) materials, are also subject to different degrees of constraints in practical applications. The light-sensitive material layer on the existing photoelectric detector has a high light reflection and a weak light absorption capacity, which is not conducive to improving the detection accuracy and sensitivity of the photoelectric detector. SUMMARY

[0003] The purpose of the embodiments of the present application is to provide a photosensitive detector and a preparation method to solve the problem of weak light absorption capacity of the light-sensitive material layer on the photoelectric detector.

[0004] In a first aspect, the embodiments of the present application provide a photosensitive detector, comprising:

[0005] a light absorption layer, the light absorption layer comprising a light-sensitive material, and a plurality of grooves being distributed on one side surface of the light absorption layer;

[0006] a first electrode, the first electrode being arranged on the other side of the light absorption layer, and the first electrode being a light-transmitting electrode;

[0007] a second electrode, the second electrode being arranged on one side of the light absorption layer.

[0008] wherein the bottom of at least part of the grooves penetrates along the thickness direction of the light absorption layer.

[0009] wherein the inner side wall of the grooves is an arc surface.

[0010] wherein the radius of the sphere on which the arc surface is located is 0.5-2 microns.

[0011] wherein the plurality of grooves are uniformly and spacedly distributed.

[0012] wherein the spacing distance between adjacent grooves is 0.5-2 microns.

[0013] wherein the light-sensitive material comprises:

[0014] at least one of perovskite material, a-Si, Ge, InGnAs, PbS, Zn2GeO4 and graphene.

[0015] The second electrode covers a partial area of the light-absorbing layer.

[0016] The thickness of the light-absorbing layer is 400-2000 nm; and / or

[0017] The thickness of the second electrode is 80-200 nm; and / or

[0018] The photosensitive detector further comprises a substrate made of a light-transmitting material, which is arranged on the side of the first electrode away from the light-absorbing layer.

[0019] In a second aspect, an embodiment of the present application provides a preparation method of a photosensitive detector, comprising:

[0020] providing a substrate with a first electrode, both the substrate and the first electrode being made of a light-transmitting material;

[0021] forming a light-absorbing layer on the side of the first electrode away from the substrate, wherein the light-absorbing layer comprises a photosensitive material, and a plurality of grooves are distributed on the surface of the side of the light-absorbing layer away from the substrate;

[0022] forming a second electrode on the side of the light-absorbing layer away from the substrate.

[0023] The step of forming a light-absorbing layer on the side of the first electrode away from the substrate comprises:

[0024] forming a template on the side of the first electrode away from the substrate, the template comprising a plurality of microspheres;

[0025] depositing a perovskite film;

[0026] immersing the substrate with the deposited perovskite film into a solvent to dissolve the microspheres and form a light-absorbing layer.

[0027] In the photosensitive detector of the embodiment of the present application, the light-absorbing layer comprises a photosensitive material, a plurality of grooves are distributed on the surface of the side of the light-absorbing layer, the first electrode is arranged on the other side of the light-absorbing layer, the first electrode is a light-transmitting electrode, and the second electrode is arranged on the side of the light-absorbing layer. By arranging a plurality of grooves on the surface of the light-absorbing layer, the reflection of light by the light-absorbing layer can be reduced, and multiple light scattering is conducive to improving the light absorption capacity and the detection accuracy and sensitivity of the photodetector. The photodetector has a simple structure and high detection reliability. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 FIG. 1 is a structural schematic diagram of a photosensitive detector in an embodiment of the present application;

[0029] Figure 2 FIG. 2 is another structural schematic diagram of a photosensitive detector in an embodiment of the present application.

[0030] Figure 3a An illustration of placing the microsphere template on the substrate;

[0031] Figure 3b An illustration of depositing the photosensitive material on the substrate;

[0032] Figure 3c An illustration of removing the microspheres;

[0033] Figure 4a Another illustration of placing the microsphere template on the substrate;

[0034] Figure 4b Another illustration of depositing the photosensitive material on the substrate;

[0035] Figure 4c Another illustration of removing the microspheres;

[0036] Figure 5 A flow chart of preparing the photosensitive detector;

[0037] Figure 6 A partial electron microscope image of the microspheres on the substrate;

[0038] Figure 7 A partial electron microscope image of the light-absorbing layer.

[0039] Reference numerals

[0040] Light-absorbing layer 10; groove 11; via 12;

[0041] First electrode 21; second electrode 22;

[0042] Substrate 30;

[0043] Microspheres 40. DETAILED DESCRIPTION

[0044] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0045] The terms "first", "second", and the like in the description and claims of the application are used for distinguishing between similar objects and are not necessarily used to describe a particular sequential or chronological order. It is to be understood that the use of such terms in the specification is not to be construed as placing limitations on the scope of the application. For example, a first object can be termed a second object, and, similarly, a second object can be termed a first object, without departing from the scope of the application. Furthermore, the words "comprise", "comprising", "include", "including", and the like, when used in the specification and in the claims, specify the presence of stated features, integers, steps, or components, but do not preclude the presence or addition of one or more other features, integers, steps, components, or groups thereof. In the description and claims of the application, the term "and / or" is used to indicate one or both stated conditions can be fulfilled. The term "and / or" covers the instances where: at least one of the stated conditions is satisfied; both stated conditions are satisfied; and the double negative - neither stated condition is satisfied - is satisfied. The term "and / or" is used in the description and in the claims to indicate one or both stated conditions can be fulfilled. The term "and / or" covers the instances where: at least one of the stated conditions is satisfied; both stated conditions are satisfied; and the double negative - neither stated condition is satisfied - is satisfied.

[0046] The application will be described in greater detail with reference to the accompanying drawings, in which Figures 1 to 7 The application will be described in greater detail with reference to the accompanying drawings, in which

[0047] As shown in the drawings, the photosensitive detector provided by the embodiments of the application is described in detail through specific embodiments and application scenarios. Figures 1 to 7 As shown in the drawings, the photosensitive detector provided by the embodiments of the application is described in detail through specific embodiments and application scenarios.

[0048] In the photosensitive detector provided by the embodiments of the application, the light-absorbing layer 10 comprises a photosensitive material, the one side surface of the light-absorbing layer 10 is provided with a plurality of grooves 11, the first electrode 21 is arranged on the other side of the light-absorbing layer 10, the first electrode 11 is a light-transmitting electrode, and the second electrode 12 is arranged on the one side of the light-absorbing layer 10. By arranging a plurality of grooves on the surface of the light-absorbing layer 10, the reflection of light by the light-absorbing layer can be reduced, and multiple light scattering is conducive to improving the light absorption capacity and the detection accuracy and sensitivity of the photodetector. The detector has a simple structure and high detection reliability.

[0049] In some embodiments, the bottom of at least part of the grooves 11 penetrates in the thickness direction of the light-absorbing layer 10. For example, the bottom of each groove 11 can penetrate in the thickness direction of the light-absorbing layer 10, so that the entire light-absorbing layer 10 has a mesh shape. For example, the bottom of part of the grooves 11 penetrates in the thickness direction of the light-absorbing layer 10 and has a through hole 12, and the radial dimension of the through hole 12 is smaller than the dimension of the opening of the groove 11. The through hole 12 at the bottom of the groove 11 can be circular, elliptical, polygonal, or the like, and the dimension of the opening of the groove 11 can be circular, elliptical, polygonal, or the like. The specific shape can be selected according to actual conditions.

[0050] Optionally, as shown in Figure 1 , Figure 2 , Figure 3c , Figure 4c , the inner side wall of the groove 11 can be an arc surface, for example, the groove 11 can be hemispherical, which is beneficial to the absorption of light and reduces light reflection through the arc surface.

[0051] Optionally, the radius of the sphere where the arc surface is located can be 0.5-2 μm, for example, the radius of the sphere where the arc surface is located can be 0.5 μm or 2 μm, and the specific radius can be selected according to the actual situation.

[0052] Optionally, the plurality of grooves 11 are uniformly spaced, and the plurality of grooves 11 can be arranged in an array on one side surface of the light-absorbing layer 10, so as to more evenly absorb light.

[0053] Optionally, the spacing distance between adjacent grooves 11 can be 0.5-2 μm, for example, the spacing distance between adjacent grooves 11 can be 1 μm or 2 μm, and the specific spacing distance between adjacent grooves 11 can be selected according to the actual situation.

[0054] In some embodiments, the photosensitive material can include at least one of perovskite material, a-Si, Ge, InGnAs, PbS, Zn2GeO4 and graphene. For example, the photosensitive material can include perovskite material, the photosensitive material can include InGnAs, and one or more of the existing photosensitive materials can be selected according to the actual situation. The perovskite material can be represented as AB03, wherein the A ion can be a cation, and can be a rare earth or alkaline earth metal element with a larger radius, such as Ca, Sr or Ba, etc.; the B ion can be a cation, and can be a transition metal element with a smaller radius, such as Ti, Mn, Pb, Fe or Sn, etc.; the O ion can be an anion, and can be a halogen, such as F (fluorine), Cl (chlorine), Br (bromine), I (iodine), etc., and the specific perovskite material can be selected according to the actual situation. The photosensitive material can be other two-dimensional (2D) photosensitive material, such as graphene, which can be selected from the existing materials according to the actual situation.

[0055] Optionally, as shown in Figure 1 , Figure 2 and Figure 5 , the second electrode 22 covers part of the area of the light-absorbing layer 10, and the number of the second electrode 22 can be one or more, for example, the number of the second electrode 22 can be two, and the two second electrodes 22 can be spaced apart, and the two second electrodes 22 can cover part of the area of the light-absorbing layer 10. The second electrode 22 can be a gold material electrode, and the second electrode 22 can be a sheet electrode, for example, the second electrode 22 can be a long sheet electrode, and the two second electrodes 22 can be coplanar.

[0056] Optionally, the thickness of the light-absorbing layer 10 can be 400-2000 nm, for example, the thickness of the light-absorbing layer 10 can be 400 nm or 1000 nm, and the specific thickness of the light-absorbing layer 10 can be selected according to actual needs.

[0057] Optionally, the thickness of the second electrode 22 can be 80-200 nm, for example, the thickness of the second electrode 22 can be 80 nm or 100 nm, and the specific thickness of the second electrode 22 can be selected according to actual needs.

[0058] In some embodiments, the inner side wall of the groove 11 can be an arc surface, the radius of the spherical surface where the arc surface is located can be 0.5-2 μm, and the spacing distance between adjacent grooves 11 can be 0.5-2 μm. The light-absorbing layer 10 can include a first region and a second region, and the radial size of the groove 11 in the first region can be different from the radial size of the groove 11 in the second region, for example, the radial size of the groove 11 in the first region can be smaller than the radial size of the groove 11 in the second region, so that different regions of the light-absorbing layer 10 can have different detection capabilities, and different regions can be selected for detection according to needs.

[0059] Optionally, the light-absorbing layer 10 can include a first region and a second region, and the distribution density of the groove 11 in the first region can be different from the distribution density of the groove 11 in the second region, for example, the distribution density of the groove 11 in the first region can be smaller than the distribution density of the groove 11 in the second region, and a larger distribution density of the groove 11 in the second region can be beneficial to the absorption of light. The distribution density of the groove 11 in different regions can be different, so that different regions of the light-absorbing layer 10 can have different detection capabilities, and different regions can be selected for detection according to needs.

[0060] Optionally, the light-absorbing layer 10 can include a first region and a second region, and the material of the light-absorbing layer 10 in the first region can be the same as or different from the material of the light-absorbing layer 10 in the second region. The material of the light-absorbing layer 10 in the first region can be different from the material of the light-absorbing layer 10 in the second region, for example, the material of the light-absorbing layer 10 in the first region can be a-Si, and the material of the light-absorbing layer 10 in the second region can be PbS, so that different regions of the light-absorbing layer 10 can have different detection capabilities, and different regions can be selected for detection according to needs.

[0061] In some embodiments, as shown in Figure 2 , Figure 3c , Figure 4c The photosensitive detector can further include a substrate 30, the substrate 30 being a light-transmitting material piece, for example, the substrate 10 can be a light-transmitting glass substrate. The substrate 30 can be arranged on the side of the first electrode 21 away from the light-absorbing layer 10, the first electrode 21 being located between the light-absorbing layer 10 and the substrate 30, and the substrate 30 can have a supporting and protecting effect.

[0062] The method for manufacturing the photosensitive detector according to the embodiment of the present application comprises:

[0063] A substrate 30 with a first electrode 21 is provided, and the substrate 30 and the first electrode 21 are both light-transmitting materials;

[0064] A light-absorbing layer 10 is formed on the side of the first electrode 21 away from the substrate 30, wherein the light-absorbing layer 10 comprises a photosensitive material, and a plurality of grooves 11 are distributed on the surface of the side of the light-absorbing layer 10 away from the substrate 30;

[0065] A second electrode 22 is formed on the side of the light-absorbing layer 10 away from the substrate 30.

[0066] The substrate 10 can be a light-transmitting glass substrate, and the first electrode 11 can be a layer of indium tin oxide (ITO) material. The plurality of grooves 11 can be distributed in an array on the surface of the side of the light-absorbing layer 10, so as to more evenly absorb light. The area of the first electrode 21 can be equal to the area of the light-absorbing layer 10, so as to facilitate full contact between the first electrode 21 and the light-absorbing layer 10.

[0067] The photosensitive detector manufactured by the method according to the embodiment of the present application has a plurality of grooves 11 distributed on the surface of the side of the light-absorbing layer 10, the first electrode 21 is arranged on the other side of the light-absorbing layer 10, the first electrode 11 is a light-transmitting electrode, and the second electrode 12 is arranged on the side of the light-absorbing layer 10. By arranging a plurality of grooves 11 on the surface of the light-absorbing layer 10, the reflection of light by the light-absorbing layer can be reduced, and multiple light scattering is conducive to improving the light absorption capacity and the detection accuracy and sensitivity of the photodetector. The detector has a simple structure and high detection reliability.

[0068] In the embodiment of the present application, the step of forming the light-absorbing layer on the side of the first electrode 21 away from the substrate 30 can comprise:

[0069] A template is formed on the side of the first electrode 21 away from the substrate 30, and the template comprises a plurality of microspheres 40;

[0070] A perovskite film is deposited;

[0071] The substrate with the deposited perovskite film is immersed in a solvent to dissolve the microspheres 40 and form the light-absorbing layer 10.

[0072] In the preparation process, the plurality of microspheres 40 can be in contact with each other or spaced apart by a certain distance. Due to the presence of the microspheres 40, during the deposition of the perovskite film, the perovskite material will be deposited in the gap between the microspheres 40, and the perovskite material will be deposited in the gap between the microspheres and the substrate 30; when the deposited perovskite film reaches the required thickness, the substrate on which the perovskite film is deposited can be immersed in a solvent to dissolve the microspheres 40 to form the light-absorbing layer 10. The solvent can dissolve the microspheres 40, and the grooves 11 are formed at the positions of the microspheres, thereby forming the light-absorbing layer 10.

[0073] In the embodiment of the present application, at least part of the bottom of the groove 11 can penetrate along the thickness direction of the light-absorbing layer 10.

[0074] Optionally, the inner side wall of the groove 11 can be an arc surface, and the radius of the spherical surface where the arc surface is located can be 0.5-2 pm, such as 0.5 pm or 2 pm. The groove 11 can be hemispherical, and the arc surface is beneficial to the absorption of light and reduces light reflection.

[0075] Optionally, the plurality of grooves 11 are uniformly and spacedly distributed, and the plurality of grooves 11 can be arrayed on one side surface of the light-absorbing layer 10, so as to more uniformly absorb light. The spacing distance between adjacent grooves 11 can be 0.5-2 pm, such as 1 pm or 2 pm.

[0076] Optionally, the photosensitive material can include at least one of perovskite material, a-Si, Ge, InGnAs, PbS, Zn2GeO4 and graphene. For example, the photosensitive material can include perovskite material, the photosensitive material can include InGnAs, and one or more of the existing photosensitive materials can be selected according to actual needs.

[0077] Optionally, the second electrode 22 covers part of the area of the light-absorbing layer 10, and the number of the second electrode 22 can be one or more, such as two. The two second electrodes 22 can be spaced apart, and the two second electrodes 22 can cover part of the area of the light-absorbing layer 10. The second electrode 22 can be a gold material electrode, and the second electrode 22 can be a sheet electrode, such as a long sheet electrode. The two second electrodes 22 can be coplanarly arranged.

[0078] Optionally, the thickness of the light-absorbing layer 10 can be 400-2000 nm, such as 400 nm or 1000 nm. The thickness of the second electrode 22 can be 80-200 nm, such as 80 nm or 100 nm. The specific thickness of the light-absorbing layer 10 and the second electrode 22 can be selected according to actual needs.

[0079] In the preparation process, such as Figures 3a to 3c and as Figures 4a to 4c , Figure 5 indicated, the ITO glass substrate can be cleaned and dried first, the microspheres 40 are transferred to the substrate 30, and then a photosensitive material is deposited on the substrate 30, such as a perovskite material, the deposition is stopped when a certain thickness is reached, and then the microspheres 40 are removed to form the light-absorbing layer 10 with the grooves 11 on the substrate 30. Different diameters and arrangements of grooves can be obtained according to the arrangement pitch and arrangement of the microspheres. The surface of the substrate 30 on which the microspheres are placed can be a smooth plane or a rough plane, such as a surface with micro-protrusions to facilitate the placement of the microspheres.

[0080] In the specific preparation process, the following steps can be included:

[0081] cleaning and drying the ITO glass substrate;

[0082] transferring a monolayer film template composed of self-assembly of microspheres on the water surface to the substrate; the microspheres can be polystyrene (PS) spheres, which are convenient for subsequent removal by solvent;

[0083] Subsequently, the substrate with the template is annealed at 90°C for 3 minutes to enhance its contact with the substrate, and a scanning electron microscope diagram of the microspheres on the substrate can be as shown in Figure 6 ;

[0084] Taking CH3NH3PbI3 photosensitive material as an example, the deposition film is prepared as follows:

[0085] The deposition film can be prepared by evaporation or spin coating process, wherein (1) the spin coating process can include: in an inert gas glove box, configure perovskite precursor solution, MAI (methylammonium iodide) and PbI2 are mixed in a molar ratio of 1:1 in a mixed solvent of DMF (N,N-dimethylformamide) / DMSO (dimethyl sulfoxide) (v:v=9:1), stirred for 0.5h, and filtered before use; adjust the rotation speed to 2000-5000rpm / min, the spin coating time is 20-60s, drop 200μL of anti-solvent chlorobenzene (CB) within 2-15s after the start of spin coating to facilitate crystallization and form perovskite film; then place the substrate on the hot plate for annealing at 100°C for 30min for standby; (2) the evaporation process can include: transferring the substrate to the vacuum evaporation equipment, pre-evaporating MAI to form an MAI atmosphere, then controlling the speed to deposit PbI2 at a thickness of 1A (angstrom) / s to form a perovskite film;

[0086] removing the template from the substrate on which the perovskite film is deposited: immersing the substrate in toluene solvent to dissolve the PS microspheres, and then annealing the substrate again at 100°C for 30min for standby; asFigure 7 As shown, the light-absorbing layer 10 formed by perovskite can present hexagonal grooves with circular openings. The periodic spacing of the grooves can be 1 μm, and the diameter of the PS microspheres used can be 1 μm. The periodicity of the grooves is consistent with the periodicity of the template composed of microspheres with a diameter of 1 μm.

[0087] like Figure 5 As shown, a second electrode 22 can be deposited on the light-absorbing layer 10. The second electrode 22 can be made of gold, forming a perovskite photodetector with a lateral structure. The thickness of the perovskite light-absorbing layer can be 400-2000 nm, and the thickness of the metal electrode can be controlled within the range of 80-200 nm. The specific thickness can be selected according to actual needs.

[0088] Under otherwise identical conditions, by using PS microspheres of different diameters as templates, the pore size and periodic arrangement of the grooves on the light-absorbing layer can be adjusted. For example, grooves with a periodic spacing of about 2 μm can be prepared using PS microspheres with a diameter of 2 μm.

[0089] During the preparation process, the presence of template microspheres restricts the crystallization space of the perovskite crystals, causing solvent evaporation to be delayed and the crystallization process to be slowed down. This leads to the preferential growth of larger grains and enhanced crystallinity. The light-absorbing layer prepared by the method in this invention reduces the space required for the crystallization process and decreases the crystallization kinetics. Due to the reduced light reflection and increased multiple light scattering within the grooves, the light-absorbing layer's ability to absorb light is enhanced.

[0090] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A photosensitive detector, characterized by, The photosensitive detector comprises: a light-absorbing layer comprising a photosensitive material, one side surface of the light-absorbing layer being distributed with a plurality of grooves; a first electrode provided on the other side of the light-absorbing layer, the first electrode being a light-transmitting electrode; a second electrode provided on one side of the light-absorbing layer; the grooves are semispherical, the second electrode is provided on the edge of the opening of the grooves, and the orthographic projection of the second electrode on the first electrode covers the orthographic projection of the grooves on the first electrode.

2. The photosensitive detector of claim 1, wherein, The bottom of at least part of the grooves penetrates in the thickness direction of the light-absorbing layer.

3. The photosensitive detector of claim 1, wherein, The inner side wall of the grooves is an arc surface.

4. The photosensitive detector of claim 3, wherein, The radius of the sphere on which the arc surface is located is 0.5-2 μm.

5. The photosensitive detector of claim 1, wherein, The plurality of grooves are uniformly spaced.

6. The photosensitive detector of claim 5, wherein, The spacing distance between adjacent grooves is 0.5-2 μm.

7. The photosensitive detector of claim 1, wherein, The photosensitive material comprises: at least one of perovskite material, a-Si, Ge, InGnAs, PbS, Zn2GeO4 and graphene.

8. The photosensitive detector of claim 1, wherein, The second electrode covers part of the area of the light-absorbing layer.

9. The photosensitive detector of claim 1, wherein, The thickness of the light-absorbing layer is 400-2000 nm; and / or The thickness of the second electrode is 80-200 nm; and / or The photosensitive detector further comprises a substrate, the substrate being a light-transmitting material piece, the substrate being provided on the side of the first electrode away from the light-absorbing layer.

10. A method of manufacturing a photosensitive detector, applied to the photosensitive detector according to any one of claims 1 to 9, characterized by, The photosensitive detector comprises: providing a substrate with a first electrode, the substrate and the first electrode both being light-transmitting material pieces; forming a light-absorbing layer on the side of the first electrode away from the substrate, wherein the light-absorbing layer comprises a photosensitive material, and one side surface of the light-absorbing layer away from the substrate is distributed with a plurality of grooves; forming a second electrode on the side of the light-absorbing layer away from the substrate.

11. The method of claim 10, wherein, The step of forming a light-absorbing layer on the side of the first electrode away from the substrate comprises: forming a template on the side of the first electrode away from the substrate, the template comprising a plurality of microspheres; depositing a perovskite film; immersing the substrate with the deposited perovskite film in a solvent to dissolve the microspheres and form the light-absorbing layer.

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