A high voltage drive half bridge circuit with fast turn on

Abstract

The application discloses a high-voltage driving half-bridge circuit with quick conduction, which comprises an NMOS tube driving circuit, a PMOS tube driving circuit and a power half-bridge driving circuit. IN The input is connected to the gate of the NMOS tube T3, the source is grounded, the drain is connected to the source of the J-type field effect tube T4, the drain is connected to V2, and the gate is connected to the gates of the NMOS tube T5 and the PMOS tube T6 respectively, and is connected to V2 through the diode Z1; the source of the NMOS tube T5 and the source of the PMOS tube T6 are connected to the gate of the PMOS tube T7, the drain of the NMOS tube T5 and the source of the PMOS tube T7 are connected to V2, the drain of the PMOS tube T6 and the source of the NMOS tube T8 are grounded; the drain of the PMOS tube T7 is connected to the drain of the NMOS tube T8, and the drain of the PMOS tube T7 is the output. The PMOS tube is driven through conventional components, the resistance value does not need to be changed for calculating the power consumption, the special gate driving with a charge pump bootstrap is omitted, and the circuit structure is simplified.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor hybrid integrated circuits, and relates to a high-voltage drive half-bridge circuit with fast conduction. BACKGROUND

[0002] The half-bridge drive circuit is widely applied to various power switches and is used as a power output stage to realize certain power amplification. The half-bridge drive circuit is usually composed of two NMOS or one NMOS and one PMOS. The drive circuit composed of two NMOS adopts bootstrap drive or isolated drive to realize the drive of the upper tube. The drive of the PMOS in the half-bridge drive circuit composed of a PMOS and an NMOS is a difficult problem.

[0003] The drive circuit specially used for the PMOS is rarely seen. In recent years, with the upgrading of the MOSFET process, the parameters of the PMOS have been greatly improved, and the PMOS is applied as the upper tube of the half-bridge more and more. Therefore, the drive circuit design of the PMOS needs to be carried out.

[0004] At present, the PMOS drive circuit mostly adopts the method of resistance voltage division when the transistor is turned on to drive. This method has the problems that the power voltage is high, the resistance power consumption needs to be recalculated and the resistance value needs to be changed, in addition, the driving current is small and the switching speed is slow. SUMMARY

[0005] The application aims at solving the problems in the prior art that the PMOS drive circuit adopts the method of resistance voltage division when the transistor is turned on, the power voltage is high, the resistance power consumption needs to be recalculated and the resistance value needs to be changed, and provides a high-voltage drive half-bridge circuit with fast conduction.

[0006] To achieve the above-mentioned purpose, the application adopts the following technical scheme:

[0007] A high-voltage drive half-bridge circuit with fast conduction comprises an NMOS drive circuit, a PMOS drive circuit and a power half-bridge drive circuit.

[0008] The NMOS drive circuit comprises a PMOS T1, an NMOS T2 and a resistor R1; the PMOS drive circuit comprises an NMOS T3, an NMOS T5, an NMOS T8, a PMOS T6, a PMOS T7, a J-type field effect tube T4, a diode Z1 and a resistor R2; and the power half-bridge circuit comprises the PMOS T7 and the NMOS T8.

[0009] V INThe gate of PMOS transistor T1, NMOS transistor T2 and NMOS transistor T3 is input respectively, the drain of PMOS transistor T1 is connected with the drain of NMOS transistor T2 through resistor R1, the source of PMOS transistor T1 is connected with power supply V1, the source of NMOS transistor T3 is connected with ground through resistor R2, the drain of NMOS transistor T3 is connected with the source of J-type field effect transistor T4, the source of J-type field effect transistor T4 is connected with the gate of J-type field effect transistor T4, the drain of J-type field effect transistor T4 is connected with power supply V2, the gate of J-type field effect transistor T4 is connected with the gate of NMOS transistor T5 and PMOS transistor T6 respectively, and is connected with power supply V2 through the anode of diode Z1; the source of NMOS transistor T5 is connected with the source of PMOS transistor T6, and then is connected with the gate of PMOS transistor T7, the drain of NMOS transistor T5 and the source of PMOS transistor T7 are connected with V2, the drain of PMOS transistor T1 is input to NMOS transistor T8, the source of NMOS transistor T2, the drain of PMOS transistor T6 and the source of NMOS transistor T8 are all connected with ground; the drain of PMOS transistor T7 is connected with the drain of NMOS transistor T8, and the drain of T7 is the output V O .

[0010] Further improvement of the application is that:

[0011] The voltage range of the power supply V1 is 9V-15V, and the voltage range of the power supply V2 is 15V-100V.

[0012] The PMOS transistor T1 and NMOS transistor T2 are all MOSFETs with drain-source voltage resistance voltage ≥2V1.

[0013] The NMOS transistor T3, NMOS transistor T5 and NMOS transistor T8 and PMOS transistor T6, PMOS transistor T7 are all MOSFETs with drain-source voltage resistance voltage ≥2V2.

[0014] The J-type field effect transistor T4 is a field effect transistor with drain-source voltage resistance voltage ≥V1.

[0015] T1-T8 all adopt ionizing total dose ≥3×10 3 Gy (Si) devices.

[0016] The resistance value range of the resistor R1 and the resistor R2 is all 100Ω-500Ω.

[0017] The diode Z1 is a voltage stabilizing diode, and the voltage stabilizing value range is 10V-18V.

[0018] The NMOS transistor T5 is replaced by NPN triode, and the PMOS transistor T6 is replaced by PNP triode.

[0019] Compared with the prior art, the application has the following beneficial effects:

[0020] The application provides a high-voltage drive half-bridge circuit with fast conduction, comprising an NMOS tube drive circuit, a PMOS tube drive circuit and a power half-bridge drive circuit, wherein the PMOS tube drive circuit is driven by selecting conventional components, without the need to calculate the power consumption of the resistor and change the resistance value, and the special gate drive with a charge pump bootstrap is omitted, so that the circuit structure is simplified and easy to realize.

[0021] Further, by using the anti-total dose chip for the components in the circuit, the anti-total dose, anti-neutron irradiation and anti-instantaneous dose rate irradiation of the whole circuit can be realized, and the irradiation applicability of the high-voltage drive half-bridge circuit is effectively enhanced. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some of the embodiments of the application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0023] Figure 1 The figure is a structure diagram of the high-voltage drive half-bridge circuit with fast conduction in the application. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solutions and advantages of the embodiments of the application more clear, the following will combine the drawings in the embodiments of the application to clearly and completely describe the technical solutions in the embodiments of the application. Obviously, the described embodiments are some of the embodiments of the application, not all the embodiments. The components of the embodiments of the application described and shown in the drawings here can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the application provided in the drawings is not intended to limit the scope of the claimed application, but only represents selected embodiments of the application. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the application.

[0026] It should be noted that: similar labels and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0027] In the description of the embodiments of the present application, it should be noted that if the terms "upper", "lower", "horizontal", "inner" and the like indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, or the orientation or position relationship of the product of the present application when it is usually placed, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second" and the like are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0028] In addition, if the term "horizontal" appears, it does not mean that the component must be absolutely horizontal, but can be slightly inclined. For example, "horizontal" only means that its direction is relatively more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0029] In the description of the embodiments of the present application, it should be noted that unless otherwise explicitly specified and limited, if the terms "arrangement", "installation", "connection", "connection" appear, they should be understood in a broad sense, for example, they can be fixedly connected, or can be detachably connected, or integrally connected; can be mechanically connected, or can be electrically connected; can be directly connected, or can be indirectly connected through an intermediate medium; can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0030] The present application will be described in further detail below with reference to the accompanying drawings:

[0031] Reference Figure 1 is a high-voltage drive half-bridge circuit structure for quick conduction in the present application, which comprises an NMOS tube drive circuit, a PMOS tube drive circuit and a power half-bridge drive circuit; the NMOS tube drive circuit comprises a PMOS tube T1, an NMOS tube T2 and a resistor R1; the PMOS tube drive circuit comprises an NMOS tube T3, an NMOS tube T5, an NMOS tube T8, a PMOS tube T6, a PMOS tube T7, a J-type field effect tube T4, a diode Z1 and a resistor R2; the power half-bridge circuit comprises a PMOS tube T7 and an NMOS tube T8; V INThe gate of PMOS transistor T1, NMOS transistor T2 and NMOS transistor T3 is input respectively, the drain of PMOS transistor T1 is connected with the drain of NMOS transistor T2 through resistor R1, the source of PMOS transistor T1 is connected with power supply V1, the source of NMOS transistor T3 is connected with ground through resistor R2, the drain of NMOS transistor T3 is connected with the source of J-type field effect transistor T4, the source of J-type field effect transistor T4 is connected with the gate of J-type field effect transistor T4, the drain of J-type field effect transistor T4 is connected with power supply V2, the gate of J-type field effect transistor T4 is connected with the gate of NMOS transistor T5 and PMOS transistor T6 respectively, and is connected with power supply V2 through the anode of diode Z1; the source of NMOS transistor T5 is connected with the source of PMOS transistor T6, and then is connected with the gate of PMOS transistor T7, the drain of NMOS transistor T5 and the source of PMOS transistor T7 are connected with V2, the drain of PMOS transistor T1 is input to NMOS transistor T8, the source of NMOS transistor T2, the drain of PMOS transistor T6 and the source of NMOS transistor T8 are all connected with ground; the drain of PMOS transistor T7 is connected with the drain of NMOS transistor T8, and the drain of T7 is the output V O .

[0032] The voltage range of power supply V1 is 9V-15V, and the voltage range of power supply V2 is 15V-100V. The MOSFET of PMOS transistor T1 and NMOS transistor T2 can be selected with the voltage of drain-source voltage resistance≥2V1. The MOSFET of NMOS transistor T3, NMOS transistor T5 and NMOS transistor T8 and the MOSFET of PMOS transistor T6 and PMOS transistor T7 can be selected with the voltage of drain-source voltage resistance≥2V2. The field effect transistor of J-type field effect transistor T4 can be selected with the voltage of drain-source voltage resistance≥V1. T1-T8 all adopt the device with ionizing total dose resistance≥3×10 3 Gy(Si), and the whole circuit can realize the resistance to total dose, neutron irradiation and instantaneous dose rate irradiation. The resistance value of resistor R1-R2 is 100Ω-500Ω. The voltage stabilizing value of diode Z1 is 10V-18V. The NPN triode can be used to replace NMOS transistor T5, and the PNP triode can be used to replace PMOS transistor T6.

[0033] Embodiment

[0034] The power supply voltage V1 is set as 12V, the power supply voltage V2 is set as 28V, the internal current limiting resistor R1-R2 of the circuit is set as 300Ω, the voltage stabilizing value of diode Z1 is set as 15V, the field effect transistor T4 is 3DJ6F, the current I DSS is 1.0-3.5mA, and is set as 2mA in the circuit.

[0035] If V INFor high level, PMOS T1 cut-off, NMOS T2 conduction, NMOS T2 drain voltage is low level, NMOS T8 cut-off. At the same time, NMOS T3 conduction, J type field effect transistor T4 gate source short circuit, then it is approximately a constant current source, the voltage on resistance R2 is 2mA*300Ω=0.6V, then the voltage on T3 drain-source is (V2-0.6V-15V)=12.4V. Diode Z1 is in steady state, the gate voltage of NMOS T5 is V2-Vz for ground, that is 13V, through the current expansion circuit composed of NMOS T5 and PMOS T6, drive PMOS T7 to conduct, the output V O of the circuit is high level.

[0036] If V IN is low level, PMOS T1 conduction, NMOS T2 cut-off, NMOS T2 drain voltage is high level, NMOS T8 conduction. At the same time, NMOS T3 cut-off, the gate voltage of NMOS T5 is V2 for ground, PMOS T7 cut-off, the output V O of the circuit is low level.

[0037] The components in the circuit are replaced by anti-ionizing total dose ≥3×10 3 Gy(Si) devices, so that the entire circuit can resist total dose irradiation; since the MOSFET used in the circuit is a multi-sub-conducting device, it has good anti-neutron radiation performance, and can resist neutrons. Through irradiation test verification, the circuit can work normally in total dose, instantaneous ionizing dose rate and neutron radiation environment, and can resist ionizing total dose ≥3×10 3 Gy(Si), resist instantaneous ionizing radiation dose rate ≥1×10 9 Gy(Si) / s, resist neutron ≥1×10 14 n / cm 2 .

[0038] The high-voltage drive half-bridge circuit with fast conduction in the application does not need charge pump and bootstrap drive, has simple structure, the device selection is a conventional component, does not need a special gate drive chip, and is easy to realize. Moreover, anti-total dose chips can be used, so that the entire circuit can resist total dose, resist neutron irradiation, and resist instantaneous dose rate irradiation, and the irradiation applicability of the circuit is strong. The power half-bridge circuit is realized by using VDMOS pipe with small conduction resistance, fast switching speed and large output current, and has the characteristics of high-speed turn-off and large-current drive.

[0039] The above is only the preferred embodiment of the application, and is not used to limit the application. For those skilled in the art, the application can have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. A high-voltage drive half-bridge circuit with fast turn-on, characterized in that, This includes NMOS transistor drive circuits, PMOS transistor drive circuits, and power half-bridge drive circuits; The NMOS transistor driving circuit includes a PMOS transistor T1, an NMOS transistor T2, and a resistor R1; the PMOS transistor driving circuit includes an NMOS transistor T3, an NMOS transistor T5, a PMOS transistor T6, a J-type field-effect transistor T4, a diode Z1, and a resistor R2; the power half-bridge circuit includes a PMOS transistor T7 and an NMOS transistor T8. V IN The inputs are respectively connected to the gates of PMOS transistor T1, NMOS transistor T2, and NMOS transistor T3. The drain of PMOS transistor T1 is connected to the drain of NMOS transistor T2 through resistor R1. The source of PMOS transistor T1 is connected to power supply V1. The source of NMOS transistor T3 is grounded through resistor R2. The drain of NMOS transistor T3 is connected to the source of J-type field-effect transistor T4. The source and gate of J-type field-effect transistor T4 are connected together. The drain of J-type field-effect transistor T4 is connected to power supply V2. The gate of J-type field-effect transistor T4 is connected to the gates of NMOS transistor T5 and PMOS transistor T6 respectively. The gates of the transistors are connected and then connected to power supply V2 via the anode of diode Z1. The source of NMOS transistor T5 is connected to the source of PMOS transistor T6, and then connected to the gate of PMOS transistor T7. The drain of NMOS transistor T5 and the source of PMOS transistor T7 are connected to V2. The drain of PMOS transistor T1 is connected to the gate of NMOS transistor T8. The source of NMOS transistor T2, the drain of PMOS transistor T6, and the source of NMOS transistor T8 are all connected to ground. The drain of PMOS transistor T7 is connected to the drain of NMOS transistor T8. The drain of T7 is the output V of the high-voltage drive half-bridge circuit. O .

2. The high-voltage drive half-bridge circuit with fast turn-on as described in claim 1, characterized in that, The voltage range of power supply V1 is 9V~15V, and the voltage range of power supply V2 is 15V~100V.

3. The high-voltage drive half-bridge circuit with fast turn-on as described in claim 1, characterized in that, Both PMOS transistor T1 and NMOS transistor T2 are MOSFETs with a drain-source withstand voltage ≥2V1.

4. The high-voltage drive half-bridge circuit with fast turn-on as described in claim 1, characterized in that, The NMOS transistors T3, T5, and T8, as well as the PMOS transistors T6 and T7, are all MOSFETs with a drain-source withstand voltage ≥2V2.

5. The high-voltage drive half-bridge circuit with fast turn-on as described in claim 1, characterized in that, The J-type field-effect transistor T4 is a field-effect transistor with a drain-source withstand voltage ≥ V1.

6. The high-voltage drive half-bridge circuit with fast turn-on as described in claim 1, characterized in that, All of T1 to T8 use a total anti-ionization dose ≥3×10⁻⁶. 3 GySi devices.

7. The high-voltage drive half-bridge circuit with fast turn-on as described in claim 1, characterized in that, The resistance values ​​of resistors R1 and R2 are both in the range of 100Ω to 500Ω.

8. The high-voltage drive half-bridge circuit with fast turn-on as described in claim 1, characterized in that, The diode Z1 is a Zener diode with a Zener voltage range of 10V to 18V.

9. The high-voltage drive half-bridge circuit with fast turn-on as described in claim 1, characterized in that, The NMOS transistor T5 is replaced by an NPN transistor, and the PMOS transistor T6 is replaced by a PNP transistor.

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