HMDS spraying device and method for spraying HMDS on wafer

Abstract

This invention provides an HMDS spraying apparatus and a method for spraying HMDS onto wafers. The apparatus includes a cover with an air inlet channel and an air outlet channel inside the cover, an air guide located on the upper surface of the cover, one end of which is connected to the air inlet channel and the other end of which is connected to the air outlet channel, and a chassis connected to the cover. The chassis and cover are fitted together to form a chamber, which is connected to both the air inlet and outlet channels. A nozzle is located within the chamber and connected to the air inlet channel. This invention forms a sealed chamber through the fitted connection of the cover and chassis, and the nozzle is located within the sealed chamber. The nozzle enables uniform spraying of HMDS onto the wafer, improving the adhesion between the photoresist and the wafer surface and ensuring better pattern transfer of the photoresist during wafer processing.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to an HMDS spraying apparatus and a method for spraying HMDS onto wafers. Background Technology

[0002] To ensure better pattern transfer of photoresist during wafer processing, an HMDS coating process is required on the wafer to replace the hydrophilic OH on the wafer surface with the hydrophobic OSi(CH3)3, so that the contact angle of the wafer surface reaches more than 60° and ensures high consistency of the contact angle, thereby ensuring better adhesion between the photoresist and the wafer surface.

[0003] However, due to inherent problems with the equipment used for HMDS spraying, uneven HMDS spraying occurs, which affects the adhesion between the photoresist and the wafer surface. Summary of the Invention

[0004] The purpose of this invention is to provide an HMDS spraying apparatus and a method for spraying HMDS onto wafers, so as to make the HMDS spraying on the wafer surface more uniform.

[0005] To achieve the above objectives, in a first aspect, the present invention provides an HMDS spraying apparatus, the apparatus comprising:

[0006] The cover has an air inlet channel and an air outlet channel. An air guide is located on the upper surface of the cover, with one end of the air guide communicating with the air inlet channel and the other end communicating with the air outlet channel. The chassis is connected to the cover, and the chassis and the cover are connected to form a chamber. The chamber is connected to the air inlet channel and the air outlet channel respectively. A nozzle is located in the chamber and is connected to the air inlet channel.

[0007] The beneficial effects of the HMDS spraying device provided by the present invention are as follows: a sealed chamber is formed by the cooperation of the cover and the chassis, and a nozzle is set in the chamber. The nozzle can achieve uniform spraying of HMDS on the wafer, which improves the adhesion between the photoresist and the wafer surface and ensures that the photoresist can better complete the pattern transfer during the wafer processing.

[0008] In one possible implementation, a conversion block is also included, which is disposed within the cover body. An air inlet channel is provided on one side of the conversion block, and an air outlet channel is provided on the other side. The air inlet and outlet channels are independently configured. The advantage of this is that by providing independent air inlet and outlet channels on the conversion block, mutual interference between air intake and exhaust is avoided, thus improving the reliability of the device.

[0009] In one possible implementation, the conversion block has a mounting groove on one side near the chassis. The mounting groove includes an opening, a bottom, and a body. The radial dimension from the opening to the body gradually increases, and the radial dimension from the body to the bottom gradually decreases. The bottom communicates with the air intake channel. The nozzle is fitted into the mounting groove and embedded within it. The advantages are: by providing this mounting groove, the nozzle is easily installed and fixed, and the embedded nozzle makes the overall structure of the device more compact.

[0010] In one possible implementation, the air intake channel has a buffer section, which is a conical structure. When air enters the air intake channel, the gas first passes through the top of the conical structure. The beneficial effect is that by setting the conical buffer section, a buffering effect on the gas is achieved, further ensuring the uniformity and integrity of the coated wafer surface.

[0011] In one possible implementation, a plurality of through holes are provided at one end of the nozzle, and the through holes are evenly arranged circumferentially around the nozzle axis. The advantage is that by evenly arranging the through holes circumferentially around the nozzle axis and facing the cavity, uniform HMDS coating is ensured.

[0012] In one possible implementation, a heating device is mounted on the chassis to control the temperature within the cavity. The advantage is that by mounting the heating device on the chassis, uniform temperature control within the cavity can be achieved, improving the effectiveness of the HMDS process and ensuring a more complete reaction between the wafer and HMDS.

[0013] In one possible implementation, the conversion block is further equipped with a first control valve and a second control valve. The first control valve is used to open or close the intake passage, and the second control valve is used to open or close the exhaust passage. The advantage is that by setting the first and second control valves, the opening or closing of the intake and exhaust passages can be easily and quickly achieved.

[0014] In a second aspect, embodiments of the present invention provide a method for spraying HMDS onto wafers, employing the above-described spraying apparatus, the method comprising:

[0015] The wafer is placed inside the chamber, with the wafer positioned directly below the nozzle;

[0016] The first control valve and heating device are turned on to allow the wafer to complete HMDS spraying in the cavity.

[0017] The beneficial effects of the method for spraying HMDS onto wafers provided by the present invention are as follows: by placing the wafer in the cavity and directly below the nozzle, uniform spraying of the wafer is achieved, and by controlling the heating device, the adhesion between the photoresist and the wafer surface is improved, ensuring that the photoresist can better complete the pattern transfer during the wafer processing.

[0018] In one possible implementation, the first control valve and heating device are opened to allow the wafer to complete the HMDS process within the chamber. This includes: after the wafer completes the HMDS process within the chamber, the first control valve and heating device are closed, and the wafer is left to stand for 5-200 seconds. The beneficial effect is that by placing the wafer in the chamber for 5-200 seconds after HMDS coating, depending on the production yield, the uniformity of the contact angle formation on the wafer surface is improved.

[0019] In one possible implementation, after a settling period of 5-200 seconds, the process includes: opening the second control valve to discharge the reactant gas from the chamber through the outlet channel. The advantage of this is that by discharging the reactant gas from the chamber through the outlet channel, potential interference with the inlet channel is avoided. Attached Figure Description

[0020] Figure 1 This is a cross-sectional view of an HMDS spraying apparatus according to an embodiment of the present invention;

[0021] Figure 2 This is a front view of an embodiment of the HMDS spraying apparatus of the present invention;

[0022] Figure 3 This is a flowchart illustrating a method for coating HMDS onto a wafer according to an embodiment of the present invention.

[0023] Figure 4 This is a schematic diagram of the structure for forming contact angles on the wafer surface in this invention.

[0024] Cover 100, conversion block 110, air intake channel 111, exhaust channel 112, buffer part 113, mounting groove 114, groove opening 115, groove bottom 116, groove body 117;

[0025] Air guide 200; chassis 300; nozzle 400, through hole 401; chamber 500. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0027] To address the existing problems, embodiments of the present invention provide an HMDS spraying apparatus, with reference to... Figure 1 and Figure 2 As shown, the device includes: a cover 100, an air guide 200, a chassis 300, and a nozzle 400. The cover 100 has an air inlet channel 111 and an air outlet channel. The air guide 200 is located on the upper surface of the cover 100, with one end connected to the air inlet channel 111 and the other end connected to the air outlet channel. The chassis 300 and the cover 100 are fitted together to form a sealed chamber 500. Both the air inlet channel 111 and the air outlet channel on the cover 100 extend into the chamber 500. The nozzle 400 is connected to the air inlet channel 111 and is located within the chamber 500.

[0028] It should be noted that, in this embodiment, the other ends of the air inlet channel 111 and the air outlet channel are connected to the upper end face of the cover 100. The side of the air guide 200 that is in contact with the upper end face has an air inlet connection hole (not shown in the figure) and an exhaust connection hole (not shown in the figure). The air inlet connection hole is connected to one end of the air guide 200 and is connected to the air inlet channel 111. The exhaust connection hole is connected to the other end of the air guide 200 and is connected to the exhaust channel 112. Thus, after air is received at one end of the air guide 200, the gas is input into the air inlet channel 111 through the air inlet connection hole and finally introduced into the chamber 500. During exhaust, the reacted gas is transmitted to the exhaust connection hole through the exhaust channel 112 and then discharged through the other end of the air guide 200.

[0029] In this embodiment, a sealed chamber 500 is formed by the cooperation of the cover 100 and the chassis 300, and a nozzle 400 is provided in the chamber 500. The nozzle 400 can achieve uniform spraying of HMDS on the wafer, which improves the adhesion between the photoresist and the wafer surface and ensures that the photoresist can better complete the pattern transfer during the wafer processing.

[0030] In one possible implementation, the HMDS spraying device further includes a conversion block 110, which is disposed inside the cover 100, and an air inlet channel 111 is disposed on one side of the conversion block 110, and an air outlet channel is disposed on the other side of the conversion block 110, with the air inlet channel 111 and the air outlet channel being separately and independently disposed from each other.

[0031] By setting independent air intake channels 111 and air outlet channels on the conversion block 110, mutual interference between air intake and air outlet is avoided, and the reliability of the device is improved.

[0032] Furthermore, the conversion block 110 has a mounting groove 114 on one side near the base, corresponding to the chamber 500. The mounting groove 114 includes an opening 115, a bottom 116, and a body 117. The radial dimension gradually increases from the opening 115 to the body 117, and gradually decreases from the body 117 to the bottom 116. The bottom 116 is connected to the air intake channel 111. The nozzle 400 is fitted into the mounting groove 114 and embedded within it. By providing this mounting groove 114, the installation and fixation of the nozzle 400 is facilitated, and the embedding of the nozzle 400 within the mounting groove 114 makes the overall structure of the device more compact.

[0033] It should be noted that in some embodiments, in order to make the nozzle 400 more securely set in the mounting groove 114, an additional fixing connection structure can be added, such as setting the nozzle 400 and the mounting groove 114 to a mutually cooperating snap-fit ​​structure, or a threaded connection structure, etc., which will not be described in detail here.

[0034] In another embodiment of the present invention, based on the above embodiment, a buffer section 113 is provided in the air intake channel 111. The buffer section 113 has a conical structure. When the air intake channel 111 is ventilated, the gas will first pass through the top of the conical structure.

[0035] In this embodiment, the top of the conical structure refers to the end with the largest radial dimension in the conical structure. The top of the conical structure is positioned near the other end of the air guide 200. When air is introduced to the other end of the air guide 200, the gas will first pass through the top of the conical structure and then through the bottom end. It should be noted that since the radial dimension of the top is larger than that of the bottom, the gas will be buffered at the top when passing through the buffer section 113, and then output through the bottom end. This ensures that the gas input into the chamber 500 is uniform and stable when the device is ventilated, further ensuring the uniformity of the spraying process.

[0036] In other embodiments, one end of the nozzle 400 is provided with a plurality of through holes 401, which are evenly arranged around the axis of the nozzle 400. It can be understood that since the wafer is circular, the through holes 401 on the nozzle 400 are evenly arranged around the axis of the nozzle 400 to ensure uniform coating of HMDS on the wafer surface.

[0037] Specifically, a heating device (not shown in the figure) is also provided on the chassis 300, which is used to control the temperature inside the chamber 500. It should be noted that this heating device can achieve uniform temperature rise inside the chamber 500, improve the effect of HMDS process, and enable the wafer and HMDS to react fully.

[0038] Furthermore, to facilitate the opening and closing of the intake and exhaust passages 112, the switching block 110 is equipped with a first control valve and a second control valve. The first control valve is used to open or close the intake passage 111, and the second control valve is used to open or close the exhaust passage 112. This ensures the airtightness of the chamber 500 while facilitating the input and output of gas.

[0039] In another embodiment of the present invention, a method for spraying HMDS onto a wafer is provided, employing the spraying apparatus described in the above embodiment, with reference to... Figure 3 As shown, the method includes:

[0040] S301: Place the wafer in the chamber, with the wafer positioned directly below the nozzle.

[0041] In this step, the wafer is placed inside the chamber, directly below the nozzle, so that the wafer can be uniformly coated with HMDS.

[0042] S302: Open the first control valve and heating device to allow the wafer to complete HMDS spraying in the chamber.

[0043] In this step, after the wafer completes HMDS spraying in the cavity, the first control valve and heating device are turned off, and then it is left to stand for 5-200 seconds. This period is called the stabilization reaction stage. (Refer to...) Figure 4 As shown in the figure, 1-9 represent the positions of the contact angles on the wafer surface. Experimental data is used for comparison.

[0044] Table 1 shows the contact angle status information before the steady-state reaction phase was used.

[0045] POS Spec(°) Left(°) Right (°) 1 ＞60 72.5 72.1 2 ＞60 72.6 72.3 3 ＞60 71 70.3 4 ＞60 73.2 72.5 5 ＞60 72.2 71.9 6 ＞60 70 70.4 7 ＞60 72.5 72.1 8 ＞60 71.9 71.5 9 ＞60 73.1 72.5 Mean ＞60 72.11 71.73 MAX 73.2 72.5 MIN 70 70.3 Range ＜5 3.2 2.2

[0046] Table 2 shows the contact angle status information after the stable reaction phase.

[0047]

[0048]

[0049] When the wafer surface contact angle reaches 60° or more and the range of the wafer surface contact angle is less than 5°, the uniformity of the wafer surface contact angle after the stabilization reaction stage is better than that without the stabilization reaction stage.

[0050] After standing for 5-200 seconds, open the second control valve to discharge the reaction gas from the chamber through the outlet channel. It should be noted that the commonly used standing time during the stable reaction phase is currently 10-20 seconds. Of course, in actual production applications, depending on process requirements, the standing time can be 5 seconds, 200 seconds, or any time point between 5 and 200 seconds.

[0051] In this embodiment, the wafer is placed inside the cavity and directly below the nozzle to achieve uniform coating of the wafer. Combined with a heating device, this improves the adhesion between the photoresist and the wafer surface, ensuring better pattern transfer during wafer processing. Furthermore, the wafer is placed in the cavity and allowed to stand during the stabilization reaction stage, further improving the uniformity of the contact angle formation on the wafer surface.

[0052] The above description is merely a specific implementation of the embodiments of this application, but the protection scope of the embodiments of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the embodiments of this application should be covered within the protection scope of the embodiments of this application. Therefore, the protection scope of the embodiments of this application should be determined by the protection scope of the claims.

Claims

1. An HMDS spraying device, characterized in that, include: The cover body has an air inlet channel and an air outlet channel inside the cover body; An air guide is provided on the upper end face of the cover, one end of the air guide is connected to the air inlet channel, and the other end of the air guide is connected to the air outlet channel; A chassis is connected to the cover, and the chassis and the cover cooperate to form a chamber, which is respectively connected to the air inlet channel and the air outlet channel; A nozzle is disposed within the chamber and connected to the air intake channel; A conversion block is disposed within the cover body, and an air inlet channel is provided on one side of the conversion block, and an air outlet channel is provided on the other side of the conversion block. The air inlet channel and the air outlet channel are independently configured. The conversion block has a mounting groove on one side near the chassis. The mounting groove includes a groove opening, a groove bottom, and a groove body. The radial dimension from the groove opening to the groove body gradually increases, and the radial dimension from the groove body to the groove bottom gradually decreases. The groove bottom is connected to the air intake channel. The nozzle is adapted to the mounting groove, and the nozzle is embedded in the mounting groove.

2. The HMDS spraying apparatus according to claim 1, characterized in that, The air intake channel has a buffer section, which is a conical structure; When the air intake channel is open, the gas will first pass through the top of the conical structure.

3. The HMDS spraying apparatus according to claim 2, characterized in that, The nozzle has several through holes at one end, and the through holes are evenly arranged around the axis of the nozzle.

4. The HMDS spraying apparatus according to claim 3, characterized in that, The chassis is equipped with a heating device, which is used to control the temperature inside the cavity.

5. The HMDS spraying apparatus according to claim 4, characterized in that, The conversion block is also provided with a first control valve and a second control valve. The first control valve is used to open or close the air intake channel, and the second control valve is used to open or close the air outlet channel.

6. A method for spraying HMDS onto a wafer, characterized in that, The method, implemented using the HMDS spraying apparatus of claim 5, comprises: The wafer is placed inside the chamber, with the wafer positioned directly below the nozzle; The first control valve and the heating device are turned on, so that the wafer can complete the HMDS spraying in the cavity.

7. The method according to claim 6, characterized in that, The step of opening the first control valve and the heating device to allow the wafer to complete the HMDS process in the chamber includes: After the wafer has completed HMDS spraying in the cavity, the first control valve and the heating device are turned off, and the wafer is left to stand for 5-200 seconds.

8. The method according to claim 7, characterized in that, After standing for 5-200 seconds, the process includes: opening the second control valve to discharge the reaction gas from the chamber through the gas outlet channel.

Images