A method for identifying ice making state of a semiconductor ice maker

Abstract

The application discloses a semiconductor ice maker ice making state recognition method, comprising the following steps: setting an environment temperature sensor on the semiconductor ice maker to collect real-time ice making environment temperature, and setting an ice making temperature sensor at an ice making position of the semiconductor ice maker to collect real-time ice making temperature; acquiring real-time critical temperature by using the real-time environment temperature, and acquiring solid temperature threshold by using the real-time environment temperature and the real-time critical temperature; comparing the real-time ice making temperature with the solid temperature threshold, and then recognizing the ice making state. By setting the temperature sensor to collect the real-time environment temperature, the real-time critical temperature under different implementation environment temperatures is confirmed by experiment, the solid temperature threshold is confirmed, and then the intelligent and accurate recognition of the ice making state is realized.

Description

Technical Field

[0001] This invention relates to the field of ice-making status recognition technology, and in particular to a semiconductor ice-making status recognition method. Background Technology

[0002] Because ice-making requires low-temperature freezing, necessitating large cooling capacities and low temperatures, most ice makers currently employ mechanical compression refrigeration. Its advantages include fast ice-making speed and large ice production capacity, but its disadvantages include large size and high cost. In today's society, with the continuous improvement of people's living standards and the emergence of personalized demands, ice makers are also facing special requirements such as miniaturization, smaller ice production, smaller size, ease of use, and lower cost. Semiconductor refrigeration technology utilizes the Peltier effect of semiconductor materials to achieve temperature difference cooling. Its core refrigeration component—the cooling element—is small in size, with convenient cooling capacity adjustment and a compact refrigeration system structure, making it ideal for producing small quantities of ice.

[0003] The entire process of making ice using a semiconductor ice maker consists of three parts: ice making, ice completion identification, and ice removal. The process is as follows: liquid water is cooled (initial temperature T0) → liquid water temperature decreases → cooling to the critical phase transition temperature T1 → latent heat of liquid-to-solid phase transition is released → the temperature of the liquid-solid mixture (liquid is water; solid is ice) rises to T2 → the temperature of the liquid-solid mixture continues to decrease, and the liquid water gradually condenses into solid ice. When the solid ice temperature drops to T3, the entire solid ice block is complete, typically T3 ≥ T1. Unlike mechanical compression refrigeration, semiconductor refrigeration has a much lower cooling capacity and coefficient of performance (COP), and its cooling effect is highly dependent on ambient temperature. Therefore, unlike mechanical compression refrigeration, the completion of ice making cannot be controlled by timing or evaporator temperature. Thus, the technology for identifying the completion of ice making is one of the key technologies for semiconductor refrigeration ice makers. Summary of the Invention

[0004] The purpose of this application is to provide a method for identifying the ice-making state of a semiconductor ice-making process. This method involves installing an ambient temperature sensor in the semiconductor ice maker to collect the real-time ambient temperature during ice making, and installing an ice-making temperature sensor at the ice-making location of the semiconductor ice maker to collect the real-time ice-making temperature. Based on the collected real-time ambient temperature, the real-time critical temperature at different ambient temperatures is accurately obtained experimentally. A solid-state temperature threshold is set based on the real-time critical temperature. By comparing the real-time ice-making temperature with the solid-state temperature threshold, the ice-making state can be accurately identified.

[0005] A method for identifying the ice state of a semiconductor ice maker includes:

[0006] Step 100: Install an ambient temperature sensor on the semiconductor ice maker to collect the real-time ambient temperature during ice making, and install an ice making temperature sensor at the ice making position of the semiconductor ice maker to collect the real-time ice making temperature.

[0007] Step 200: Obtain the real-time critical temperature using the real-time ambient temperature, and obtain the solid-state temperature threshold using the real-time ambient temperature and the real-time critical temperature.

[0008] Step 300: Compare the real-time ice-making temperature with the solid temperature threshold:

[0009] If the real-time ice-making temperature passes the real-time critical temperature and is less than or equal to the solid temperature threshold, then ice-making is considered complete.

[0010] In conjunction with the semiconductor ice-making mechanism ice state identification method described in this invention, in a first possible embodiment, step 100 includes:

[0011] Step 110: Set up a corresponding ice-making temperature sensor at each ice-making location;

[0012] Step 120: Use the ice-making temperature sensor to collect the ice-making temperature corresponding to each ice-making position;

[0013] Step 130: Obtain the maximum value from the collected ice-making temperatures as the real-time ice-making temperature.

[0014] In conjunction with the semiconductor ice-making mechanism ice state identification method described in this invention, in a second possible embodiment, step 100 further includes:

[0015] Step 140: Install an ice-making temperature sensor at the center of the ice-making location;

[0016] Step 150: Use the ice-making temperature sensor to collect the ice-making temperature in real time as the real-time ice-making temperature.

[0017] In conjunction with the semiconductor ice-making mechanism ice state identification method described in this invention, in either the first or second possible implementation, step 200 includes:

[0018] Step 201: If the difference between the real-time ambient temperature and the real-time critical temperature is a fixed value, then the solid-state temperature threshold is determined by the real-time ambient temperature and the fixed value.

[0019] If the difference between the real-time ambient temperature and the real-time critical temperature is a non-fixed value, then the maximum value is determined from the multiple non-fixed values, and the solid-state temperature threshold is determined by the real-time ambient temperature and the maximum value.

[0020] The ice-making state identification method of the semiconductor ice maker described in this invention involves installing an ambient temperature sensor in the semiconductor ice maker to collect the real-time ambient temperature during ice making, and installing an ice-making temperature sensor at the ice-making location of the semiconductor ice maker to collect the real-time ice-making temperature. Based on the collected real-time ambient temperature, the real-time critical temperature at different real-time ambient temperatures is accurately obtained through experiments. A solid-state temperature threshold is set based on the real-time critical temperature. By comparing the real-time ice-making temperature with the solid-state temperature threshold, the ice-making state can be accurately identified. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of Embodiment 1 of a semiconductor ice-making mechanism ice state identification method according to the present invention;

[0023] Figure 2 This is a schematic diagram of Embodiment 2 of a semiconductor ice-making mechanism ice state identification method in this invention;

[0024] Figure 3 This is a schematic diagram of Embodiment 3 of a semiconductor ice-making mechanism ice state identification method in this invention; Detailed Implementation

[0025] The technical solutions of this invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are all within the scope of protection of this invention.

[0026] The purpose of this application is to provide a method for identifying the ice-making state during the ice-making process of a semiconductor ice maker.

[0027] The semiconductor ice-making process, from cooling water to the final formation of ice, involves the following temperature changes: liquid water cooling (initial temperature T0) → liquid water temperature decreases → cooling to the critical phase transition temperature T1 → releasing the latent heat of the liquid-to-solid phase transition → the temperature of the liquid-solid mixture (liquid is water; solid is ice) rises to T2 → the temperature of the liquid-solid mixture continues to decrease, and the liquid water gradually condenses into solid ice. When the solid ice temperature drops to T3, the entire solid ice block is formed, typically T3 ≥ T1. Based on the above principle, this patent proposes an ice-making completion state recognition and control technology.

[0028] Example 1

[0029] A method for identifying the ice state of a semiconductor ice maker, such as Figure 1 , Figure 1 This is a schematic diagram of Embodiment 1 of a semiconductor ice maker ice state identification method according to the present invention; it includes: Step 100, setting an ambient temperature sensor on the semiconductor ice maker to collect the real-time ambient temperature during ice making, and setting an ice making temperature sensor at the ice making position of the semiconductor ice maker to collect the real-time ice making temperature; Step 200, obtaining a real-time critical temperature using the real-time ambient temperature, and obtaining a solid-state temperature threshold using the real-time ambient temperature and the real-time critical temperature; Step 300, comparing the real-time ice making temperature with the solid-state temperature threshold: if the real-time ice making temperature has passed the real-time critical temperature and is less than or equal to the solid-state temperature threshold, then ice making is identified as complete.

[0030] An ambient temperature sensor is installed on the ice maker to sense the real-time ambient temperature. Experiments can be conducted to obtain the real-time critical temperature corresponding to different ambient temperatures. Once the real-time critical temperature is obtained, the solid-state temperature threshold can be determined. During the refrigeration process, the temperature continuously decreases until the real-time critical temperature is reached, meaning the rate of temperature change is less than zero. After reaching the real-time critical temperature, latent heat is released, causing a temperature rise phase where the rate of temperature change is greater than zero. As the ice-making process continues, the temperature continues to decrease until a fixed temperature threshold is reached, at which point freezing is complete.

[0031] Generally, the ice-making process is complete when the real-time ice-making temperature is below the solid-state temperature threshold. After obtaining the ice-making status, users can end the ice-making process, remove the ice cubes, and use them to save ice-making time.

[0032] Example 2

[0033] In this embodiment, the grooves in the ice-making containers are all different. For example... Figure 2 , Figure 2 This is a schematic diagram of Embodiment 2 of a semiconductor ice maker ice state identification method according to the present invention; preferably, step 110: set a corresponding ice-making temperature sensor at each ice-making position; step 120: use the ice-making temperature sensor to collect the ice-making temperature corresponding to each ice-making position; step 130: obtain the maximum value from the collected ice-making temperatures as the real-time ice-making temperature.

[0034] In this embodiment, the shapes of the ice-making grooves can be different. For example, if five ice cubes are to be made, since their shapes are different and their temperatures are uneven, in order to accurately identify each ice-making state, a corresponding ice-making temperature sensor needs to be installed in each groove used for making ice cubes, and the temperature of each of the five ice cubes needs to be collected and set to T. t1 Tt2 T t3 T t4 T t5 Temperature points correspond to the real-time ice-making temperatures collected at each ice-making location.

[0035] In this embodiment, the highest value T of all real-time ice-making temperatures is used. max =Max(T) t1 T t2 T t3 T t4 T t5 ) to make judgments and controls, because T max The highest real-time ice-making temperature represents all ice cubes, corresponding to the ice cube with the slowest production speed. If this value meets the criteria of passing the critical temperature value and being less than the solid temperature threshold, it means that all ice cubes have been formed.

[0036] Example 3

[0037] Unlike Embodiment 2, in this embodiment, the grooves of the ice-making container are symmetrical, such as... Figure 3 , Figure 3 This is a schematic diagram of Embodiment 3 of a semiconductor ice maker ice state identification method in this invention; specifically, step 140, setting an ice-making temperature sensor at the center of the ice-making position; step 150, using the ice-making temperature sensor to collect the ice-making temperature in real time as the real-time ice-making temperature.

[0038] In this embodiment, the ice-making grooves are symmetrical in shape. Because the ice distribution structure of the refrigeration box is symmetrical, the temperature distribution of each ice block is relatively uniform, and the real-time ice-making temperature difference between different ice blocks is small. Therefore, an ice-making temperature sensor can be placed at the center of the ice-making box mechanism in the ice maker to determine the real-time ice-making temperature T, thus saving costs.

[0039] It is worth noting that, for Embodiment 3, except for the symmetrical arrangement of the structure, other situations, such as the connection between the cooler and the cold conductor, are in an ideal state. However, for the case of uneven contact, the uneven connection between the cooler and the cold conductor will cause differences in the distribution of cold energy and the cooling speed of each ice block. The temperature of each ice block will also be different. In this case, the method of Embodiment 2 can also be used, setting ice-making temperature sensors separately, collecting real-time ice-making temperatures, and comparing the maximum real-time ice-making temperature with the first solid temperature threshold to determine the ice-making completion status.

[0040] For the real-time ice-making temperature T or T collected above max The ice-making determination scheme is as follows: using a solid temperature threshold T 00 As the criterion, when T or T maxBelow the solid-state temperature threshold T 00 This indicates that the ice-making process is complete. Based on the aforementioned actual ice-making process, the entire temperature change process is as follows: the initial liquid state T0 cools down to T1 (critical temperature), then heats up to T2 (latent heat is released as the liquid transitions to solid, resulting in a liquid-solid mixture), and then continues cooling down to T3, which is the temperature corresponding to a completely solid state. Typically, T3 ≥ T1. Because the cooling state of a semiconductor ice-making mechanism is greatly affected by ambient temperature, the critical temperature T1 is not a fixed value under different ambient temperatures; that is, T1 varies with the ambient temperature. This forms the solid-state temperature threshold T. 00 This introduces uncertainty, if T 00 The selection is too high; once T appears... 00 The condition ≥T1 only corresponds to a cryogenic liquid state and does not actually reach a solid ice state, leading to a misjudgment. If T 00 The selection is too low, T 00 ≤T1, and finally enter the aforementioned T2→T3→T 00 Typically, T3 ≥ T1. While solid ice making is complete in this state, the end time of ice making is significantly delayed compared to the actual completion time, and this delay is uncertain. In summary, determining the end of ice making based on a threshold temperature will result in two outcomes: either the ice is not fully made before it is considered complete, or the ice is made, but the corresponding time is longer than the actual ice making time. This patent provides a solution to this problem: adding an ambient temperature sensor to detect the ambient temperature. Assume the sensed ambient temperature is T. a The results were obtained by experimentally measuring different ambient temperatures T. a Calculate the temperature difference ΔT = T at the corresponding critical temperature T1. a -T1. Depending on the ice tank structure of the ice maker, the following two situations may occur: ① ΔT remains basically constant, meaning the critical temperature changes linearly with the ambient temperature. A higher ambient temperature results in a higher critical temperature, while a lower ambient temperature results in a lower critical temperature, with the difference remaining relatively constant. In this case, the critical temperature can be determined based on the ambient temperature T. a The corresponding critical temperature T1 is determined by T. 00 Value. To ensure reliable icing, the final solid-state temperature threshold can be taken as T1-ΔT1, where ΔT1 ranges from 0.5 to 2℃. The larger the value of ΔT1, the longer the actual icing end control time. ② ΔT variation, i.e., the asynchronous change between the critical temperature and the ambient temperature, means that the difference between the ambient temperature and the icing temperature is not fixed under different ambient temperatures. For this condition, the maximum difference ΔT between the ambient temperature and the critical temperature under different ambient temperatures is taken. max =(T a -T1)max, also based on ambient temperature T a The corresponding temperature value T1 and (T1-ΔT) max Determine T 00 =T1-ΔT maxValue. To ensure reliable icing, the final T value can be taken. 00 -ΔT1, where ΔT1 ranges from 0.5 to 2℃. The larger the value of ΔT1, the longer the actual ice-making end control time.

[0041] For example, in the first operating condition, assuming an ice maker operates at different ambient temperatures of 20℃, 25℃, and 30℃, the corresponding critical temperatures are -12℃, -7℃, and -2℃ respectively, with a corresponding ΔT = 32 and a solid-state temperature threshold T. 00 It can take the value T. a -32, to ensure the water freezes completely, then T 00 It can take the value T a -32.5~T a -34. Correspondingly, in the second operating condition, the critical temperatures of this ice maker at ambient temperatures of 20℃, 25℃, and 30℃ are -12℃, -6℃, and -0.5℃, respectively, with corresponding temperature differences of 32℃, 31℃, and 30.5℃. Therefore, ΔT max =32, solid-state temperature threshold T 00 It can take the value T. a -ΔT max =T a -32, to ensure water freezes completely, the solid-state temperature threshold T 00 It can take the value T. a -32.5~T a -34.

[0042] The ice-making state identification method of the semiconductor ice maker of the present invention involves installing an ambient temperature sensor in the semiconductor ice maker to collect the real-time ambient temperature during ice making, and installing an ice-making temperature sensor at the ice-making position of the semiconductor ice maker to collect the real-time ice-making temperature. Based on the collected real-time ambient temperature, the real-time critical temperature at different real-time ambient temperatures is accurately obtained through experiments. A solid-state temperature threshold is set based on the real-time critical temperature. By comparing the real-time ice-making temperature with the solid-state temperature threshold, the ice-making state can be accurately identified.

[0043] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for identifying the ice state of a semiconductor ice maker, characterized in that, include: Step 100: Install an ambient temperature sensor on the semiconductor ice maker to collect the real-time ambient temperature during ice making, and install an ice making temperature sensor at the ice making position of the semiconductor ice maker to collect the real-time ice making temperature. Step 200: Obtain the real-time critical temperature using the real-time ambient temperature, and obtain the solid-state temperature threshold using the real-time ambient temperature and the real-time critical temperature. If the difference between the real-time ambient temperature and the real-time critical temperature is a fixed value, then the solid-state temperature threshold is determined by the real-time ambient temperature and the fixed value. If the difference between the real-time ambient temperature and the real-time critical temperature is a non-fixed value, then the maximum value is determined from the multiple non-fixed values ​​obtained, and the solid-state temperature threshold is determined by the real-time ambient temperature and the maximum value. Step 300: Compare the real-time ice-making temperature with the solid temperature threshold: If the real-time ice-making temperature passes the real-time critical temperature and is less than or equal to the solid temperature threshold, then ice-making is considered complete.

2. The method for identifying the ice state of a semiconductor ice maker according to claim 1, characterized in that, Step 100 includes: Step 110: Set up a corresponding ice-making temperature sensor at each ice-making location; Step 120: Use the ice-making temperature sensor to collect the ice-making temperature corresponding to each ice-making position; Step 130: Obtain the maximum value from the collected ice-making temperatures as the real-time ice-making temperature.

3. The method for identifying the ice state of a semiconductor ice maker according to claim 1, characterized in that, Step 100 further includes: Step 140: Install an ice-making temperature sensor at the center of the ice-making location; Step 150: Use the ice-making temperature sensor to collect the ice-making temperature in real time as the real-time ice-making temperature.

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