Single event transient pulse simulation model construction method, simulation method and simulation model

Abstract

The application provides a single-particle transient pulse simulation model construction method, a simulation method and a simulation model, and relates to the technical field of computer simulation. 2 The method comprises the following steps: obtaining an initial linear energy transfer of a single particle; converting the initial linear energy transfer to obtain a target linear energy transfer, wherein the initial linear energy transfer is in units of MeV·cm / mg, and the target linear energy transfer is in units of electron-hole pairs per unit length; obtaining a radial attenuation length and an incident depth of the single particle when the single particle is incident on a component with a sensitive junction; obtaining a distribution of electron-hole pairs generated by the single particle on an incident path according to the target linear energy transfer, the radial attenuation length and the incident depth of the single particle; and constructing a single-particle transient pulse simulation model according to the distribution. Compared with the prior art, the application solves the problem of how to construct an accurate single-particle transient pulse simulation model, improves research reliability, shortens the research period and reduces research costs.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of computer simulation, in particular to a single event transient pulse simulation model construction method, a simulation method and a simulation model. BACKGROUND

[0002] In recent years, the amount of spacecraft development tasks in China has been increasing, and the development cycle of spacecraft has developed from one satellite per year to more than ten satellites per year or even dozens of satellites per year. As the core of the spacecraft, the performance and function of electronic devices in the space environment are the main factors affecting whether the spacecraft mission can be completed. The electronic devices on the spacecraft will be subjected to the space radiation of charged particles such as the Earth's radiation belt, solar cosmic rays, and galactic cosmic rays in the space environment, thereby causing abnormalities such as reset, shutdown, and "large current" working state. Space radiation effects include total dose effects, displacement damage effects, and single event effects, among which single event effects are one of the most common space radiation effects.

[0003] In the prior art, the single event effect research methods of space microelectronic devices mainly include experimental research and computer numerical simulation research. The experimental research is divided into flight tests and ground tests, and the computer simulation research is divided into device-level simulation, circuit-level simulation, and hybrid simulation research. Flight tests can best reflect the single event effect characteristics of devices in the space radiation environment, but this method has a long research period, high cost, many limitations, and randomness of particle effect occurrence, and there is a possibility of no test results. Therefore, computer simulation is an ideal research method. How to construct an accurate single event transient pulse simulation model is the key to computer simulation of single event transients. SUMMARY

[0004] The problem solved by the present application is how to construct an accurate single event transient pulse simulation model to improve research reliability, shorten research period, and reduce research cost.

[0005] To solve the above problems, the present application provides a single event transient pulse simulation model construction method, which includes the following steps:

[0006] Obtain the initial linear energy transfer of a single particle;

[0007] Convert the initial linear energy transfer to obtain a target linear energy transfer, wherein the initial linear energy is in units of MeV·cm / mg, and the target linear energy transfer is in units of electron-hole pairs per unit length; 2

[0008] When the single particle is incident on a device with a sensitive junction, obtain the radial attenuation length and incident depth of the single particle;

[0009] ​According to the target linear energy transfer, the radial attenuation length of the single particle and the incident depth, a distribution of electron-hole pairs generated by the single particle on an incident path is obtained.

[0010] A single particle transient pulse simulation model is constructed according to the distribution.

[0011] Optionally, the converting the initial linear energy transfer to obtain a target linear energy transfer comprises:

[0012] The initial linear energy transfer is converted to obtain a target linear energy transfer by formula one, the formula one being:

[0013] LET1 = LET0 x ε i x ρ. i

[0014] Wherein, LET0 represents the initial linear energy transfer, LET1 represents the target linear energy transfer, εi represents the energy required to generate one electron-hole pair in the material, and ρ represents the density of the component material.

[0015] Optionally, the obtaining the distribution of electron-hole pairs generated by the single particle on the incident path according to the target linear energy transfer, the radial attenuation length of the single particle and the incident depth comprises:

[0016] A peak density is obtained according to the target linear energy transfer and the radial attenuation length of the single particle.

[0017] The distribution of electron-hole pairs generated by the single particle on the incident path is obtained according to the peak density, the radial attenuation length of the single particle and the incident depth,

[0018] The peak density is the peak density of the electron-hole pairs.

[0019] Optionally, the obtaining the peak density according to the target linear energy transfer and the radial attenuation length of the single particle comprises:

[0020] The peak density is calculated according to the target linear energy transfer and the radial attenuation length of the single particle by formula two, the formula two being:

[0021]

[0022] Wherein, N PK is the peak density, σ is the radial attenuation length, and q is the elementary charge.

[0023] Optionally, the obtaining the distribution of electron-hole pairs generated by the single particle on the incident path according to the peak density, the radial attenuation length of the single particle and the incident depth comprises:​

[0024] According to the peak density, the radial attenuation length of the single particle and the incident depth, the distribution of the electron-hole pairs generated by the single particle on the incident path is calculated by formula three, the formula three is:

[0025]

[0026] Wherein, r is the incident depth of the single particle, r0 is the incident center of the single particle, N ions (r) is the distribution of the electron-hole pairs generated by the single particle on the incident path.

[0027] Optionally, the electron-hole pairs generated by the single particle on the incident path are in a cylindrical Gaussian distribution. 2 The single particle transient pulse simulation model construction method provided by the application is more easily realized, the process is simple, the construction period is short and the cost is low compared with the prior art using experimental research.

[0028] To solve the above technical problems, the application further provides a single particle transient pulse simulation model, which is obtained by using the single particle transient pulse simulation model construction method.

[0029] The single particle transient pulse simulation model and the single particle transient pulse simulation model construction method have the same advantages as the prior art, and will not be described here.

[0030] To solve the above technical problems, the application further provides a single particle transient pulse simulation method based on the single particle transient pulse simulation model, which comprises the following steps:

[0031] The initial linear energy transfer, the radial attenuation length and the incident depth of the target single particle are obtained.

[0032] The transient pulse of the target single particle is simulated according to the initial linear energy transfer, the radial attenuation length, the incident depth of the target single particle and the single particle transient pulse simulation model.

[0033] The single event transient pulse simulation method has the advantages that: the single event transient pulse simulation method is based on the single event transient pulse simulation model, and the transient pulse of the target single particle is simulated by the initial linear energy transfer, the radial attenuation length, the incident depth of the target single particle and the single event transient pulse simulation model, compared with the single event effect in the prior art, the single event effect is random, which causes no result in the research, and the single event transient pulse simulation model is used to make the single event transient pulse simulation result reliable and the simulation process simple.

[0034] To solve the above technical problems, the application further provides a single event transient pulse simulation device, comprising:

[0035] An acquisition unit is configured to acquire the initial linear energy transfer, the radial attenuation length and the incident depth of a target single particle.

[0036] A processing unit is configured to simulate the transient pulse of the target single particle according to the initial linear energy transfer, the radial attenuation length, the incident depth of the target single particle and the single event transient pulse simulation model.

[0037] The single event transient pulse simulation device and the single event transient pulse simulation method have the same advantages as the prior art, and details are not repeated here.

[0038] To solve the above technical problems, the application further provides a computer device, comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor executes the computer program to realize the steps of the single event transient pulse simulation method.

[0039] The computer device and the single event transient pulse simulation method have the same advantages as the prior art, and details are not repeated here. BRIEF DESCRIPTION OF DRAWINGS

[0040] Figure 1 The application environment diagram of the single event transient pulse simulation model construction method in the embodiment of the application;

[0041] Figure 2 The flowchart of the single event transient pulse simulation model construction method in the embodiment of the application;

[0042] Figure 3 The flowchart of the single event transient pulse simulation method in the embodiment of the application;

[0043] Figure 4It is a schematic diagram of electron-hole pair distribution generated by heavy ion vertical incidence on PN junction in the embodiment of the present application;

[0044] Figure 5 It is a schematic diagram of transient current generated by heavy ion incidence on PN junction in the embodiment of the present application;

[0045] Figure 6 It is a structure diagram of a single event transient pulse simulation device in the embodiment of the present application;

[0046] Figure 7 It is an internal structure diagram of a computer device in the embodiment of the present application. DETAILED DESCRIPTION

[0047] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings.

[0048] In the description of the embodiments of the present application, the description of the term "some embodiments" means that the specific features, structures, materials or characteristics described in combination with the embodiments or examples are contained in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above-mentioned terms does not necessarily refer to the same implementation or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0049] Figure 1 It is an application environment diagram of a single event transient pulse simulation model construction method in the embodiment of the present application. Refer to Figure 1 The single event transient pulse simulation model construction method is applied to a single event transient pulse simulation model construction system. The single event transient pulse simulation model construction system includes a terminal 110 and a server 120. The terminal 110 and the server 120 are connected through a network. The terminal 110 can be a desktop terminal or a mobile terminal, and the mobile terminal can be at least one of a mobile phone, a tablet computer, a notebook computer and the like. The server 120 can be realized by an independent server or a server cluster composed of multiple servers.

[0050] The embodiment of the present application provides a single event transient pulse simulation model construction method. The present embodiment mainly takes the terminal 110 (or the server 120) in the above Figure 1 as an example for illustration. Refer to Figure 2 The single event transient pulse simulation model construction method specifically includes the following steps:

[0051] Step S1, obtaining an initial linear energy transfer of a single particle;

[0052] Step S2, converting the initial linear energy transfer to obtain a target linear energy transfer, wherein the initial linear energy is MeV·cm2 / mg, the target linear energy transfer is in units of electron-hole pairs per unit length;

[0053] Step S3, when the single particle is incident to the component with a sensitive junction, the radial attenuation length and the incident depth of the single particle are obtained;

[0054] Step S4, according to the target linear energy transfer, the radial attenuation length and the incident depth of the single particle, the distribution of the electron-hole pairs generated by the single particle on the incident path is obtained;

[0055] Step S5, the single particle transient pulse simulation model is constructed according to the distribution.

[0056] In the embodiment, the single event effect (SEE) refers to that when a single high-energy particle passes through a device sensitive junction (generally a reverse-biased PN junction), a high-density charge is ionized on the track by Coulomb interaction, the ionized charge forms a local node disturbance effect by drift and diffusion mechanism, the disturbance causes transmission, amplification or induces other parasitic effects, and thus causes the device to have phenomena such as abnormal working current, internal logic state error, output abnormality, function disorder or device burnout.

[0057] In some preferred embodiments, the single particle transient pulse generates a large number of additional electron-hole pairs on the incident path by simulating the single particle transient pulse in the sensitive junction (PN junction) based on the single particle transient pulse simulation model, and the electron-hole pairs are the cause of the transient current generated in the PN junction.

[0058] The embodiment provides a single particle transient pulse simulation model construction method, which converts the initial linear energy transfer of the single particle in units of MeV·cm 2 / mg into a target linear energy transfer in units of electron-hole pairs per unit length, and when the single particle is incident to the component with a sensitive junction, the radial attenuation length and the incident depth of the single particle can be obtained, the distribution of the electron-hole pairs generated by the single particle on the incident path is obtained through the target linear energy transfer in units of electron-hole pairs per unit length, the radial attenuation length and the incident depth of the single particle, and finally the single particle transient pulse simulation model is constructed through the distribution of the electron-hole pairs generated by the single particle on the incident path. Compared with the prior art using experimental research, the single particle transient pulse simulation model construction method of the present application is easier to implement, and the single particle transient pulse simulation model constructed by the method can accurately simulate the single particle transient pulse, the process is simple, the construction period is short, and the cost is low.

[0059] In some embodiments, in step S2, the initial LET is converted to obtain the target LET, including:

[0060] In step S21, the initial LET is converted by a formula one to obtain the target LET, the formula one is:

[0061] LET1 = LET0 x ε i x p;

[0062] wherein LET0 represents the initial LET, LET1 represents the target LET, ε i represents the energy required to generate one electron-hole pair in the material, p represents the density of the device material, wherein the unit of LET1 is ε i the unit of LET0 is the unit of p is

[0063] In some preferred embodiments, the linear energy transfer (LET) is a function of particle mass, energy, and the material through which the particle passes. In single-particle simulation, LET is often used to describe the ionization absorbed dose of particle source deposition in the material.

[0064] In some embodiments, in step S4, the distribution of electron-hole pairs generated by the single particle on the incident path is obtained according to the target LET, the radial attenuation length of the single particle, and the incident depth, including:

[0065] In step S41, the peak density is obtained according to the target LET and the radial attenuation length of the single particle.

[0066] In step S42, the distribution of electron-hole pairs generated by the single particle on the incident path is obtained according to the peak density, the radial attenuation length of the single particle, and the incident depth, the peak density being the peak density of the electron-hole pairs.

[0067] In some preferred embodiments, the electron-hole pair refers to when the photon energy used is equal to or greater than the band gap E} of the semiconductor, the photon is absorbed and the electron in the valence band is excited to the conduction band, forming a hole in the valence band, i.e. generating excess carriers or balancing carriers. High-energy single-particle injection will generate electron-hole pairs.

[0068] In some embodiments, in step S41, the peak density is obtained according to the target LET and the radial attenuation length of the single particle, including:

[0069] Step S411, according to the target line energy transfer and the radial attenuation length of the single particle, the peak density is calculated by formula two, the formula two is:

[0070]

[0071] Wherein, N PK The peak density is σ, the radial attenuation length is q, and the meta-charge charge amount is q.

[0072] In some embodiments, in step S42, according to the peak density, the radial attenuation length of the single particle and the incident depth, the distribution of the electron-hole pairs generated by the single particle on the incident path is obtained, including:

[0073] Step S421, according to the peak density, the radial attenuation length of the single particle and the incident depth, the distribution of the electron-hole pairs generated by the single particle on the incident path is calculated by formula three, the formula three is:

[0074]

[0075] Wherein, r is the incident depth of the single particle, r0 is the incident center of the single particle, N ions (r) is the distribution of the electron-hole pairs generated by the single particle on the incident path.

[0076] In some preferred embodiments, the incident depth r of the single particle is the radial distance from r0.

[0077] In some embodiments, the electron-hole pairs generated by the single particle on the incident path are in a cylindrical Gaussian distribution.

[0078] In some preferred embodiments, Gaussian distribution generally refers to normal distribution, which is a very important probability distribution in the fields of mathematics, physics and engineering, and has a great influence in many aspects of statistics.

[0079] The single particle transient pulse simulation model construction method provided by the embodiments of the present application can simulate the single particle transient pulse by taking MeV·cm 2The initial linear energy transfer of a single particle is converted into a target linear energy transfer in units of electron-hole pairs per unit length, and the radial attenuation length and the depth of incidence of the single particle are obtained when the single particle is incident on a device with a sensitive junction, the distribution of electron-hole pairs generated by the single particle on the incident path is obtained by the target linear energy transfer in units of electron-hole pairs per unit length, the radial attenuation length and the depth of incidence of the single particle, and finally, the single particle transient pulse simulation model is constructed by the distribution of electron-hole pairs generated by the single particle on the incident path. Compared with the prior art using experimental research, the single particle transient pulse simulation model construction method of the present application is easier to implement, and the single particle transient pulse simulation model constructed by the method can accurately simulate the single particle transient pulse, the process is simple, the construction period is short, and the cost is low.

[0080] Another embodiment of the present application provides a single particle transient pulse simulation model obtained by the single particle transient pulse simulation model construction method.

[0081] The single particle transient pulse simulation model and the single particle transient pulse simulation model construction method of the embodiments of the present application have the same advantages as the prior art, and will not be described here.

[0082] In one embodiment, as Figure 3 The embodiments of the present application provide a single particle transient pulse simulation method based on the single particle transient pulse simulation model, including the following steps:

[0083] Step T1, obtaining the initial linear energy transfer, radial attenuation length and depth of incidence of a target single particle;

[0084] Step T2, simulating the transient pulse of the target single particle according to the initial linear energy transfer of the target single particle, the radial attenuation length, the depth of incidence and the single particle transient pulse simulation model.

[0085] The single particle transient pulse simulation method of the present application has the following advantages over the prior art: the single particle transient pulse simulation method is based on the single particle transient pulse simulation model, and the transient pulse of the target single particle is simulated by the initial linear energy transfer, radial attenuation length, depth of incidence of the target single particle and the single particle transient pulse simulation model. Compared with the prior art using experimental research, the single particle effect occurs randomly, which may result in no results in the research. The present application uses a single particle transient pulse simulation model to make the single particle transient pulse simulation result reliable, the simulation process is simple, the period is short, and the cost is low.

[0086] As Figure 6As shown, another embodiment of the present invention provides a single-particle transient pulse simulation device, comprising:

[0087] The acquisition unit is used to acquire the initial linear energy transfer, radial decay length, and incident depth of the target single particle;

[0088] The processing unit is used to simulate the transient pulse of the target single particle based on the initial linear energy transfer, radial decay length, incident depth, and the single-particle transient pulse simulation model of the target single particle.

[0089] The single-particle transient pulse simulation device and the single-particle transient pulse simulation method described in this embodiment of the invention have the same advantages over the prior art, and will not be repeated here.

[0090] Another embodiment of the present invention provides a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the above-described single-particle transient pulse simulation method.

[0091] Figure 7 An internal structural diagram of a computer device in one embodiment is shown. Specifically, this computer device may be... Figure 1 Terminal 110 (or server 120) in the middle. For example... Figure 7 As shown, the computer device includes a processor, memory, network interface, input device, and display screen connected via a system bus. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores an operating system and may also store a computer program. When executed by the processor, this computer program enables the processor to implement a single-event transient pulse simulation method. The internal memory may also store a computer program, which, when executed by the processor, enables the processor to perform a single-event transient pulse simulation method. The display screen can be a liquid crystal display (LCD) or an e-ink display. The input device can be a touch layer covering the display screen, buttons, a trackball, or a touchpad mounted on the computer device's casing, or an external keyboard, touchpad, or mouse.

[0092] Another embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the above-described single-particle transient pulse simulation method.

[0093] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and RAMbus dynamic RAM (RDRAM), etc.

[0094] Application Examples

[0095] This embodiment simulates a single-particle transient pulse in a PN junction, such as... Figure 4 As shown, the initial linear energy transfer (LET) of the target single particle is 20 MeV·cm⁻¹. 2 The simulation results show the distribution of electron-hole pairs generated at the incident trajectory after a heavy ion of / mg is incident on the PN junction. Where LET0 = 20MeV·cm 2 The electron-hole pair distribution exhibits a distinct columnar Gaussian distribution, with a density of / mg, a radial attenuation length σ of 0.05, and an incident depth of 20μm. The figure shows a uniform density of / mg, a radial attenuation length σ of 0.05, and an incident depth of 20μm.

[0096] In some preferred embodiments, such as Figure 5 The figure shows a simulation of a single-event transient pulse with a PN junction subjected to a 5V reverse bias voltage. As can be seen from the figure, the reverse bias current is almost zero when there is no single-event incident voltage, but increases significantly in the 0-10V range after a single-event incident voltage. -6 A significant transient current peak appears within a time range of s, indicating that the simulation method using a single-event transient pulse simulation model can effectively simulate single-event transient processes.

[0097] Although the present disclosure discloses as above, the protection scope of the present disclosure is not limited to this. The person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure, and these changes and modifications will fall within the protection scope of the present disclosure.

Claims

1. A method for constructing a single-particle transient pulse simulation model, characterized in that, Includes the following steps: Obtain the initial linear energy transfer of a single particle; The initial linear energy transfer is transformed to obtain the target linear energy transfer, wherein the initial linear energy is expressed in MeV·cm⁻¹. 2 The target linear energy transfer is measured in units of / mg, with electron-hole pairs per unit length as the unit. When the single particle is incident on a component with a sensitive junction, the radial attenuation length and incident depth of the single particle are obtained. Based on the target linear energy transfer, the radial decay length of the single particle, and the incident depth, the distribution of electron-hole pairs generated by the single particle along the incident path is obtained. A single-particle transient pulse simulation model is constructed based on the aforementioned distribution. The step of obtaining the distribution of electron-hole pairs generated by the single particle along the incident path based on the target linear energy transfer, the radial decay length of the single particle, and the incident depth includes: The peak density is obtained based on the target linear energy transfer and the radial decay length of the single particle; Based on the peak density, the radial attenuation length of the single particle, and the incident depth, the distribution of electron-hole pairs generated by the single particle along the incident path is calculated using Equation 3, which is: ； in, r The incident depth of the single particle. r 0 is the incident center of the single particle. Radial attenuation length, N represents the distribution of electron-hole pairs generated by the single particle along its incident path. PK The peak density is the peak density of the electron-hole pairs.

2. The method for constructing a single-particle transient pulse simulation model according to claim 1, characterized in that, The step of converting the initial linear energy transfer to obtain the target linear energy transfer includes: The initial linear energy transfer is transformed using Equation 1 to obtain the target linear energy transfer, where Equation 1 is: ； Wherein, LET0 represents the initial linear energy transfer, and LET1 represents the target linear energy transfer. This represents the energy required to create an electron-hole pair in a material. This indicates the density of the component material.

3. The method for constructing a single-particle transient pulse simulation model according to claim 2, characterized in that, The process of obtaining the peak density based on the target linear energy transfer and the radial decay length of the single particle includes: The peak density is calculated using Equation 2 based on the target linear energy transfer and the radial decay length of the single particle. Equation 2 is: ； Where q is the elementary charge.

4. The method for constructing a single-particle transient pulse simulation model according to claim 1, characterized in that, The electron-hole pairs generated by the single particle along the incident path exhibit a columnar Gaussian distribution.

5. A single-particle transient pulse simulation model, characterized in that, The single-particle transient pulse simulation model was obtained using the method described in any one of claims 1 to 4.

6. A single-event transient pulse simulation method, based on the single-event transient pulse simulation model as described in claim 5, characterized in that, Includes the following steps: Obtain the initial linear energy transfer, radial decay length, and incident depth of the target single particle; The transient pulse of the target single particle is simulated based on the initial linear energy transfer, radial decay length, incident depth, and the single-particle transient pulse simulation model.

7. A single-particle transient pulse simulation device, characterized in that, include: The acquisition unit is used to acquire the initial linear energy transfer, radial decay length, and incident depth of the target single particle; The processing unit is used to simulate the transient pulse of the target single particle based on the initial linear energy transfer, radial decay length, incident depth, and the single-particle transient pulse simulation model. The processing unit is further configured to obtain the distribution of electron-hole pairs generated by the single particle along the incident path based on the target linear energy transfer, the radial decay length of the single particle, and the incident depth, including: The peak density is obtained based on the target linear energy transfer and the radial decay length of the single particle; Based on the peak density, the radial attenuation length of the single particle, and the incident depth, the distribution of electron-hole pairs generated by the single particle along the incident path is calculated using Equation 3, which is: ； Where r is the incident depth of the single particle, and r0 is the incident center of the single particle. N represents the distribution of electron-hole pairs generated by the single particle along its incident path. PK The peak density is the peak density of the electron-hole pairs.

8. A computer device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the single-particle transient pulse simulation method as described in claim 6.

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