A through-hole vertical structure LED chip and its fabrication method

Abstract

This invention provides a through-hole vertical structure LED chip and its fabrication method. The method involves: setting a second metal reflector and a current blocking layer on the light-emitting mesa; stacking an integrated metal layer on the side of the second metal reflector and current blocking layer facing away from the epitaxial stack; and covering the integrated metal layer, the second metal reflector, and the current blocking layer with a dielectric DBR reflector. Thus, the dielectric DBR reflector acts as a reflective structure for the second metal reflector and the current blocking layer, achieving supplementary reflection of the LED chip's light-emitting mesa. Furthermore, the dielectric DBR reflector, embedded in the through-hole sidewall, serves as an insulating layer between the first metal reflector and the epitaxial stack. The combination of the DBR reflector and the first metal reflector significantly improves the luminous efficiency of the LED chip.

Description

Technical Field

[0001] This invention relates to the field of light-emitting diodes, and more particularly to a through-hole vertical structure LED chip and its fabrication method. Background Technology

[0002] With the development of LED chip technology, significant progress has been made in vertical structure chips and flip-chip chips, especially with the adoption of through-hole design, which can greatly improve the luminous efficiency of vertical and flip-chip chips.

[0003] In current through-hole thin-film LED chip fabrication methods, Ag or Ni / Ag ohmic reflective materials are typically used as the P-type ohmic contact metal. However, Ag is prone to oxidation and migration, affecting the ohmic contact effect. Furthermore, metal migration can cause leakage or even electrode detachment, severely impacting the reliability of the LED chip. Secondly, the applicant has also found that the opening reduces the effective light-emitting area of ​​the LED chip, resulting in low luminous efficiency. Additionally, the contact metal inside the through-hole is prone to burn-in, affecting chip stability and making it unsuitable for high current applications, severely limiting the product's application.

[0004] In view of this, the inventor has specifically designed a through-hole vertical structure LED chip and its manufacturing method, which leads to this invention. Summary of the Invention

[0005] The purpose of this invention is to provide a through-hole vertical structure LED chip and its manufacturing method, so as to solve the technical problems of poor reliability and current tolerance of existing through-hole thin film LED chips.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0007] A through-hole vertical structure LED chip, comprising:

[0008] The substrate and a bonding layer, a first metal mirror, a dielectric DBR mirror, a second metal mirror, a current blocking layer, and an epitaxial stack disposed on the substrate; the epitaxial stack includes at least a second type semiconductor layer, an active region, and a first type semiconductor layer stacked sequentially along a first direction, and the epitaxial stack is etched along a portion of the surface of the second type semiconductor layer to a portion of the surface of the first type semiconductor layer to form a via and a light-emitting mesa; the first direction is perpendicular to the substrate and extends from the substrate to the epitaxial stack.

[0009] The second metal reflector and the current blocking layer are respectively disposed on the light-emitting platform;

[0010] The integrated metal layer is stacked on the side surface of the second metal reflector and the current blocking layer opposite to the epitaxial stack, and the integrated metal layer has an exposed surface for electrical connection;

[0011] The dielectric DBR reflector covers the integrated metal layer, the second metal reflector, and the current blocking layer, and extends to the sidewall of the via.

[0012] The first metal mirror is formed on the surface of the dielectric DBR mirror by embedding the through hole;

[0013] The substrate and the first metal mirror are integrally formed through the bonding layer.

[0014] Preferably, the first metal reflector corresponding to the light-emitting platform has a patterned structure, and the bonding layer is embedded in the patterned structure to increase the contact area between the first metal reflector and the bonding layer.

[0015] Preferably, the second metal reflector is disposed at the edge of the through hole.

[0016] Preferably, the first metal reflector extends from the through hole to the light-emitting platform to form a ring structure, and the projected area of ​​the ring structure on the substrate surface is greater than the projected area of ​​the second metal reflector corresponding to the edge of the through hole on the substrate surface.

[0017] Preferably, a second metal reflector is provided at the edge of the light-emitting platform, so that the second metal reflector surrounds the current blocking layer in the horizontal direction.

[0018] Preferably, the first metal reflector comprises an Ag-based reflective material.

[0019] Preferably, the second metal reflector comprises one or more of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.

[0020] Preferably, an anti-diffusion layer is further provided on the surface of the second metal mirror facing away from the epitaxial stack, and the anti-diffusion layer includes one or more of Ti, Ni, Pt, TiW, and Au.

[0021] Preferably, the integrated metal layer includes at least one of Cr, Ti, Ni, and Au.

[0022] Preferably, the current blocking layer comprises one or more of SiO2, Al2O3, MgF, HfO2 and Si3N4.

[0023] Preferably, the dielectric DBR mirror comprises alternating stacks of SiO2 and TiO2.

[0024] This invention also provides a method for manufacturing a through-hole vertical structure LED chip, comprising the following steps:

[0025] S01, Provide a growth substrate;

[0026] S02. An epitaxial stack is stacked on the surface of the growth substrate, the epitaxial stack comprising a first type semiconductor layer, an active region and a second type semiconductor layer stacked sequentially along the growth direction;

[0027] S03. Through-holes and light-emitting mesa are formed on the epitaxial stack by etching process, and the through-holes expose part of the surface of the first type semiconductor layer;

[0028] S04. A second metal reflector and a current blocking layer are formed on the light-emitting platform, respectively;

[0029] S05. Fabricate an integrated metal layer, wherein the integrated metal layer is stacked on the side surface of the second metal reflector and the current blocking layer that is away from the epitaxial stack.

[0030] S06. Fabricate a dielectric DBR reflector, wherein the dielectric DBR reflector covers the integrated metal layer, the second metal reflector and the current blocking layer, and extends to the sidewall of the through hole;

[0031] S07. Deposit a first metal mirror, wherein the first metal mirror is formed on the surface of the dielectric DBR mirror by embedding the through hole;

[0032] S08. A substrate is provided, and the substrate is integrally formed with the first metal mirror through a bonding layer;

[0033] S09. Peel off the growth substrate;

[0034] S10. Etch a portion of the epitaxial stack to the integrated metal layer, so that the integrated metal layer has an exposed surface for electrical connection.

[0035] Preferably, the first metal reflector corresponding to the light-emitting platform has a patterned structure, and the bonding layer is embedded in the patterned structure to increase the contact area between the first metal reflector and the bonding layer.

[0036] Preferably, the first metal reflector extends from the through hole to the light-emitting platform to form a ring structure, and the projected area of ​​the ring structure on the substrate surface is greater than the projected area of ​​the second metal reflector corresponding to the edge of the through hole on the substrate surface.

[0037] Preferably, an anti-diffusion layer is further provided on the surface of the second metal mirror facing away from the epitaxial stack, and the anti-diffusion layer includes one or more of Ti, Ni, Pt, TiW, and Au.

[0038] As can be seen from the above technical solution, the through-hole vertical structure LED chip provided by the present invention achieves supplementary reflection of the LED chip's light-emitting mesa by: setting a second metal reflector and a current blocking layer on the light-emitting mesa; stacking the integrated metal layer on the side surface of the second metal reflector and the current blocking layer facing away from the epitaxial stack; and covering the integrated metal layer, the second metal reflector, and the current blocking layer with a dielectric DBR reflector; thereby, the dielectric DBR reflector acts as a reflective structure for the second metal reflector and the current blocking layer. Furthermore, while the dielectric DBR reflector is embedded in the through-hole sidewall as an insulating layer between the first metal reflector and the epitaxial stack, the combination of the DBR reflector and the first metal reflector significantly improves the luminous efficiency of the LED chip.

[0039] Then, by setting the first metal reflector corresponding to the light-emitting platform to have a patterned structure, and embedding the bonding layer into the patterned structure to increase the contact area between the first metal reflector and the bonding layer, the heat of the light-emitting platform can be conducted to the substrate for heat dissipation more quickly, thereby improving the reliability of the LED chip under high current.

[0040] Furthermore, by setting the first metal reflector to extend from the through-hole to form a ring structure on the light-emitting platform, and the projected area of ​​the ring structure on the substrate surface being larger than the projected area of ​​the second metal reflector corresponding to the edge of the through-hole on the substrate surface, the through-hole is cleverly utilized to increase the reflective area of ​​the LED and improve the luminous efficiency of the LED chip. Simultaneously, heat from the first metal reflector corresponding to the through-hole is better dissipated to the light-emitting platform, further accelerating the heat dissipation of the through-hole.

[0041] Finally, the first metal mirror includes an Ag-based reflective material with high thermal conductivity, which fully utilizes the high thermal conductivity of Ag (Ag has a thermal conductivity of 427 W / (m·K)) to accelerate the conduction of heat from the epitaxial stack to the substrate.

[0042] The method for manufacturing a through-hole vertical structure LED chip provided by the present invention achieves the beneficial effects of the above-mentioned through-hole filled LED chip, while its process is simple, convenient, and easy to mass-produce. Attached Figure Description

[0043] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0044] Figure 1 This is a schematic diagram of the through-hole vertical structure LED chip provided in an embodiment of the present invention;

[0045] Figures 2.1 to 2.10 As described in the embodiments of the present invention Figure 1 A schematic diagram of the structure corresponding to the steps of the fabrication method of the through-hole filled LED chip;

[0046] Symbols in the figure: 1. Substrate, 2. Growth substrate, 3. Epitaxial stack, 31. Type I semiconductor layer, 32. Active region, 33. Type II semiconductor layer, 34. Through-hole, 35. Light-emitting mesa, 4. Current blocking layer, 5. Second metal mirror, 6. Integrated metal layer, 7. Dielectric DBR mirror, 8. First metal mirror, 9. Bonding layer. Detailed Implementation

[0047] To make the content of this invention clearer, the following description, in conjunction with the accompanying drawings, further illustrates the invention. This invention is not limited to this specific embodiment. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0048] like Figure 1 As shown, a through-hole 34-type vertical structure LED chip includes:

[0049] The substrate 1 and the bonding layer 9, the first metal mirror 8, the dielectric DBR mirror 7, the second metal mirror 5, the current blocking layer 4, and the epitaxial stack 3 disposed on the substrate 1; the epitaxial stack 3 includes at least a second type semiconductor layer 33, an active region 32, and a first type semiconductor layer 31 stacked sequentially along a first direction, and the epitaxial stack 3 forms a through hole 34 and a light-emitting mesa 35 by etching a portion of the surface of the second type semiconductor layer 33 to a portion of the surface of the first type semiconductor layer 31; the first direction is perpendicular to the substrate 1 and points from the substrate 1 to the epitaxial stack 3;

[0050] The second metal reflector 5 and the current blocking layer 4 are respectively disposed on the light-emitting platform 35;

[0051] An integrated metal layer 6 is stacked on the side surface of the second metal reflector 5 and the current blocking layer 4 away from the epitaxial stack 3, and the integrated metal layer 6 has an exposed surface for electrical connection.

[0052] The dielectric DBR reflector 7 covers the integrated metal layer 6, the second metal reflector 5, and the current blocking layer 4, and extends to the sidewall of the through hole 34.

[0053] The first metal mirror 8 is formed on the surface of the dielectric DBR mirror 7 by embedding through the through hole 34;

[0054] The substrate 1 and the first metal reflector 8 are integrally formed by the bonding layer 9.

[0055] It is worth mentioning that the types of the first type semiconductor layer 31, the active region 32 and the second type semiconductor layer 33 of the epitaxial stack 3 are not limited in this embodiment. For example, the first type semiconductor layer 31 may be, but is not limited to, an N-type doped gallium nitride layer, and correspondingly, the second type semiconductor layer 33 may be, but is not limited to, a P-type doped gallium nitride layer.

[0056] In this embodiment, the first metal reflector 8 corresponding to the light-emitting platform 35 has a patterned structure, and the bonding layer 9 is embedded in the patterned structure to increase the contact area between the first metal reflector 8 and the bonding layer 9.

[0057] In this embodiment, the second metal reflector 5 is disposed at the edge of the through hole 34.

[0058] In this embodiment, the first metal reflector 8 extends from the through hole 34 to the light-emitting platform 35 to form a ring structure, and the projected area of ​​the ring structure on the surface of the substrate 1 is greater than the projected area of ​​the second metal reflector 5 corresponding to the edge of the through hole 34 on the substrate surface.

[0059] In this embodiment, a second metal reflector 5 is provided at the edge of the light-emitting platform 35, so that the second metal reflector 5 surrounds the current blocking layer 4 in the horizontal direction.

[0060] In this embodiment, the first metal reflector 8 includes an Ag-based reflective material.

[0061] In this embodiment, the second metal reflector 5 includes one or more of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.

[0062] In this embodiment, an anti-diffusion layer is also provided on the surface of the second metal mirror 5 away from the epitaxial stack 3. The anti-diffusion layer includes one or more of Ti, Ni, Pt, TiW, and Au.

[0063] In this embodiment, the integrated metal layer 6 includes at least one of Cr, Ti, Ni, and Au.

[0064] In this embodiment, the current blocking layer 4 includes one or more of SiO2, Al2O3, MgF, HfO2 and Si3N4.

[0065] In this embodiment, the dielectric DBR mirror 7 comprises alternating stacks of SiO2 and TiO2.

[0066] In this embodiment, substrate 1 includes a conductive substrate.

[0067] This invention also provides a method for manufacturing a through-hole 34-type vertical structure LED chip, comprising the following steps:

[0068] S01, such as Figure 2.1 As shown, a growth substrate 2 is provided;

[0069] S02, such as Figure 2.2 As shown, an epitaxial stack 3 is stacked on the surface of the growth substrate 2. The epitaxial stack 3 includes a first type semiconductor layer 31, an active region 32 and a second type semiconductor layer 33 stacked sequentially along the growth direction.

[0070] S03, such as Figure 2.3 As shown, a via 34 and a light-emitting mesa 35 are formed on the epitaxial stack 3 by an etching process, and the via 34 exposes part of the surface of the first type semiconductor layer 31.

[0071] S04, such as Figure 2.4 As shown, a second metal reflector 5 and a current blocking layer 4 are formed on the light-emitting platform 35, respectively;

[0072] S05, such as Figure 2.5 As shown, an integrated metal layer 6 is fabricated and stacked on the surface of the second metal mirror 5 and the current blocking layer 4 away from the epitaxial stack 3.

[0073] S06, such as Figure 2.6 As shown, a dielectric DBR reflector 7 is fabricated. The dielectric DBR reflector 7 covers the integrated metal layer 6, the second metal reflector 5, and the current blocking layer 4, and extends to the sidewall of the through hole 34.

[0074] S07, such as Figure 2.7 As shown, a first metal mirror 8 is deposited on the surface of the dielectric DBR mirror 7 by means of embedding through-hole 34;

[0075] S08, such as Figure 2.8 As shown, a substrate 1 is provided, and the substrate 1 is integrally formed with a first metal reflector 8 through a bonding layer 9;

[0076] S09, such as Figure 2.9 As shown, the growth substrate 2 is peeled off;

[0077] S10, such as Figure 2.10 As shown, the etched portion of the epitaxial stack 3 extends to the integrated metal layer 6, giving the integrated metal layer 6 an exposed surface for electrical connection.

[0078] In this embodiment, the first metal reflector 8 corresponding to the light-emitting platform 35 has a patterned structure, and the bonding layer 9 is embedded in the patterned structure to increase the contact area between the first metal reflector 8 and the bonding layer 9.

[0079] In this embodiment, the first metal reflector 8 extends from the through hole 34 to the light-emitting platform 35 to form a ring structure, and the projected area of ​​the ring structure on the surface of the substrate 1 is greater than the projected area of ​​the second metal reflector 5 corresponding to the edge of the through hole 34 on the substrate surface.

[0080] In this embodiment, an anti-diffusion layer is also provided on the surface of the second metal mirror 5 away from the epitaxial stack 3. The anti-diffusion layer includes one or more of Ti, Ni, Pt, TiW, and Au.

[0081] As can be seen from the above technical solution, the through-hole 34 type vertical structure LED chip provided by the present invention achieves supplementary reflection of the LED chip's light-emitting mesa 35 by: setting a second metal reflector 5 and a current blocking layer 4 on the light-emitting mesa 35; stacking an integrated metal layer 6 on the side surface of the second metal reflector 5 and the current blocking layer 4 facing away from the epitaxial stack 3; and covering the integrated metal layer 6, the second metal reflector 5, and the current blocking layer 4 with a dielectric DBR reflector 7; thereby, the dielectric DBR reflector 7 serves as a reflective structure for the second metal reflector 5 and the current blocking layer 4. Furthermore, while the dielectric DBR reflector 7 is embedded in the sidewall of the through-hole 34 as an insulating layer between the first metal reflector 8 and the epitaxial stack 3, the combination of the DBR reflector and the first metal reflector 8 significantly improves the luminous efficiency of the LED chip.

[0082] Then, by setting the first metal reflector 8 corresponding to the light-emitting platform 35 to have a patterned structure, and embedding the bonding layer 9 into the patterned structure to increase the contact area between the first metal reflector 8 and the bonding layer 9, the heat of the light-emitting platform 35 can be conducted to the substrate 1 for heat dissipation more quickly, thereby improving the reliability of the LED chip under high current.

[0083] Furthermore, by setting the first metal reflector 8 to extend from the through-hole 34 to the light-emitting mesa 35 to form a ring structure, and the projected area of ​​the ring structure on the substrate 1 surface is larger than the projected area of ​​the second metal reflector 5 corresponding to the edge of the through-hole 34 on the substrate surface, the through-hole 34 is cleverly utilized to increase the reflective area of ​​the LED and improve the luminous efficiency of the LED chip; at the same time, the heat from the first metal reflector 8 corresponding to the through-hole 34 is better dissipated to the light-emitting mesa 35, thereby further accelerating the heat dissipation of the through-hole 34.

[0084] Finally, the first metal mirror 8 includes an Ag-based reflective material with high thermal conductivity, which fully utilizes the high thermal conductivity of Ag (Ag has a thermal conductivity of 427 W / (m·K)) to accelerate the conduction of heat from the epitaxial stack 3 to the substrate 1.

[0085] The method for manufacturing a vertical structure LED chip with 34 through holes provided by the present invention achieves the beneficial effects of the aforementioned LED chip with 34 through holes, while being simple, convenient, and easy to mass-produce.

[0086] The apparatus provided in this embodiment of the invention operates on the same principle and produces the same technical effects as the aforementioned method embodiments. For the sake of brevity, any parts not mentioned in the apparatus embodiments can be referred to the corresponding content in the aforementioned method embodiments. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, apparatuses, and units described above can all be referred to the corresponding processes in the aforementioned method embodiments, and will not be repeated here.

[0087] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0088] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0089] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A through-hole vertical structure LED chip, characterized in that, include: The substrate and a bonding layer, a first metal mirror, a dielectric DBR mirror, a second metal mirror, a current blocking layer, and an epitaxial stack disposed on the substrate; the epitaxial stack includes at least a second type semiconductor layer, an active region, and a first type semiconductor layer stacked sequentially along a first direction, and the epitaxial stack is etched along a portion of the surface of the second type semiconductor layer to a portion of the surface of the first type semiconductor layer to form a via and a light-emitting mesa; the first direction is perpendicular to the substrate and extends from the substrate to the epitaxial stack. The second metal reflector and the current blocking layer are respectively disposed on the light-emitting platform; An integrated metal layer is stacked on the side surface of the second metal reflector and the current blocking layer that is away from the epitaxial stack, and the integrated metal layer has an exposed surface for electrical connection; The dielectric DBR reflector covers the integrated metal layer, the second metal reflector, and the current blocking layer, and extends to the sidewall of the via. The first metal mirror is formed on the surface of the dielectric DBR mirror by embedding the through hole; The substrate and the first metal mirror are integrally formed through the bonding layer.

2. The through-hole vertical structure LED chip according to claim 1, characterized in that, The first metal reflector corresponding to the light-emitting platform has a patterned structure, and the bonding layer is embedded in the patterned structure to increase the contact area between the first metal reflector and the bonding layer.

3. The through-hole vertical structure LED chip according to claim 1, characterized in that, The second metal reflector is disposed at the edge of the through hole.

4. The through-hole vertical structure LED chip according to claim 1, characterized in that, The first metal reflector extends from the through hole to the light-emitting platform to form a ring structure, and the projected area of ​​the ring structure on the substrate surface is greater than the projected area of ​​the second metal reflector corresponding to the edge of the through hole on the substrate surface.

5. The through-hole vertical structure LED chip according to claim 3, characterized in that, A second metal reflector is also provided at the edge of the light-emitting platform, so that the second metal reflector surrounds the current blocking layer in the horizontal direction.

6. The through-hole vertical structure LED chip according to claim 1, characterized in that, The first metal mirror comprises an Ag-based reflective material.

7. The through-hole vertical structure LED chip according to claim 1, characterized in that, The second metal reflector includes one or more of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.

8. The through-hole vertical structure LED chip according to claim 1, characterized in that, An anti-diffusion layer is also provided on the surface of the second metal mirror on the side opposite to the epitaxial stack. The anti-diffusion layer includes one or more of Ti, Ni, Pt, TiW, and Au.

9. The through-hole vertical structure LED chip according to claim 1, characterized in that, The integrated metal layer includes at least one of Cr, Ti, Ni, and Au.

10. A method for fabricating a through-hole vertical structure LED chip, characterized in that, Includes the following steps: S01, Provide a growth substrate; S02. An epitaxial stack is stacked on the surface of the growth substrate, the epitaxial stack comprising a first type semiconductor layer, an active region and a second type semiconductor layer stacked sequentially along the growth direction; S03. Through-holes and light-emitting mesa are formed on the epitaxial stack by etching process, and the through-holes expose part of the surface of the first type semiconductor layer; S04. A second metal reflector and a current blocking layer are formed on the light-emitting platform, respectively; S05. Fabricate an integrated metal layer, wherein the integrated metal layer is stacked on the side surface of the second metal reflector and the current blocking layer that is away from the epitaxial stack. S06. Fabricate a dielectric DBR reflector, wherein the dielectric DBR reflector covers the integrated metal layer, the second metal reflector and the current blocking layer, and extends to the sidewall of the through hole; S07. Deposit a first metal mirror, wherein the first metal mirror is formed on the surface of the dielectric DBR mirror by embedding the through hole; S08. A substrate is provided, and the substrate is integrally formed with the first metal mirror through a bonding layer; S09. Peel off the growth substrate; S10. Etch a portion of the epitaxial stack to the integrated metal layer, so that the integrated metal layer has an exposed surface for electrical connection.

11. The method for manufacturing a through-hole vertical structure LED chip according to claim 10, characterized in that, The first metal reflector corresponding to the light-emitting platform has a patterned structure, and the bonding layer is embedded in the patterned structure to increase the contact area between the first metal reflector and the bonding layer.

12. The method for manufacturing a through-hole vertical structure LED chip according to claim 10, characterized in that, The first metal reflector extends from the through hole to the light-emitting platform to form a ring structure, and the projected area of ​​the ring structure on the substrate surface is greater than the projected area of ​​the second metal reflector corresponding to the edge of the through hole on the substrate surface.

13. The method for manufacturing a through-hole vertical structure LED chip according to claim 10, characterized in that, An anti-diffusion layer is also provided on the surface of the second metal mirror away from the epitaxial stack. The anti-diffusion layer includes one or more of Ti, Ni, Pt, TiW, and Au.

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