A method and application for quantum dot pattern deposition on rough surfaces based on microfluidics technology

By forming roughened regions on the surface of the Micro-LED substrate and combining them with microfluidic technology, the problem of low light extraction efficiency in quantum dot patterned deposition was solved, achieving efficient full-color display and reduced costs.

CN115663094BActive Publication Date: 2025-12-02XIAMEN UNIV
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Patent Information

Application Number
CN202211258999.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-10-14
Publication Date
2025-12-02
Estimated Expiration
2042-10-14

AI Technical Summary

Technical Problem

Existing quantum dot patterning deposition technology excites light sources on smooth surfaces with single propagation and refraction, resulting in low light extraction efficiency and reduced absorption conversion rate of quantum dot solutions, which affects the light quality and cost of Micro-LED full-color displays.

Method used

Microfluidic technology is used to grind, polish and photoresist the substrate surface to form a roughened area. The microfluidic cover plate is then pressed with the substrate to form a microchannel. After injecting quantum dot solution, ultraviolet light is used for curing to form a color conversion layer pattern embedded in the substrate. A light-shielding layer and a protective layer are formed in the smooth area.

Benefits of technology

It enhances the light extraction efficiency of the excitation light source, improves the absorption conversion rate of the quantum dot solution, simplifies the preparation process, reduces costs, and achieves high-quality full-color display.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention discloses a method for depositing quantum dot patterns on a rough surface based on microfluidic technology. The method involves grinding and polishing the surface of a color conversion layer substrate, then roughening the area where a quantum dot solution is pre-deposited using a photoresist mask to increase the roughness of the pre-deposited area. Next, quantum dot solution is deposited onto the patterned roughened area using microfluidic technology, and excess solution is purged. This forms a light-shielding layer between the color conversion layer patterns and a surface-deposited protective layer. This invention reduces total internal reflection of excitation light on surfaces of two materials with different refractive indices, enhances the absorption of the excitation light source by the quantum dot solution in the color conversion layer, improves the light extraction efficiency of the excitation light source, and reduces energy consumption. Furthermore, it can improve the quantum dot light conversion efficiency, enhance light quality, and result in better brightness for full-color displays, making it suitable for larger-scale full-color display applications.
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Description

Technical Field

[0001] This invention belongs to the technical field of quantum dot color conversion layer display, specifically relating to a method and application of quantum dot pattern deposition on rough surfaces based on microfluidic technology. Background Technology

[0002] Micro-LEDs are small, high-performance LEDs based on inorganic GaN. In display applications, they are an emerging technology characterized by high contrast, low power consumption, long lifespan, wide color gamut, high dynamic range, and fast response. Compared to display technologies such as LCD and OLED, Micro-LEDs have broad applications in displays, visible light communication, and biomedicine, attracting increasing numbers of researchers to both fundamental and applied research in this field.

[0003] There are three main technical solutions for achieving full-color Micro-LED: ① Monolithic epitaxial growth technology, which involves selectively growing regions emitting red, green, and blue light on the same wafer. However, this method faces difficulties in material control and the integration of LED arrays and drivers, resulting in poor display quality. ② Pixel RGB arrangement method: This method grows RGB LEDs on different wafers and arranges them in a parallel or perpendicular manner. By changing the pulse current period and duty cycle, color mixing is adjusted to achieve full-color Micro-LED display. This technology faces the technical barrier of mass transfer, resulting in high difficulty, low yield, high cost, and expensive finished products. ③ Quantum dot color conversion method: This method achieves full-color display by exciting quantum dot patterns or phosphors in the color conversion layer with monochromatic light. Compared with monolithic epitaxial growth technology and RGB arrangement method, it has outstanding advantages such as low cost, high resolution, and short processing time, and is currently receiving widespread attention. In quantum dot color conversion, a color conversion layer needs to be prepared on the device surface or substrate. The light extraction efficiency of quantum dots to array excitation light source, the color conversion efficiency of quantum dots, and the light emission mixing between sub-pixels in the color conversion layer have an important impact on the overall performance of Micro-LED full-color display devices. At present, quantum dot color conversion is mainly based on photolithography, inkjet printing and microfluidics.

[0004] In the color conversion layer, the absorption of the excitation light source by the quantum dot solution in the deposition region determines the light absorption and conversion efficiency of the quantum dot solution, as well as the excitation light utilization rate and energy consumption. The independent patterned sub-pixels of the quantum dots determine the excellent light quality. Currently, the need for color conversion layers can be met by photolithography to prepare patterned quantum dot deposition, inkjet printing technology to deposit quantum dot solutions on various pre-deposited patterned regions, and microfluidic methods.

[0005] Existing quantum dot patterning deposition technology, when quantum dots are deposited on the surface or in grooves of conventional smooth materials, suffers from several drawbacks. Because the refractive indices of both materials are fixed, the propagation and refraction direction of the excitation light source is unidirectional, leading to a decrease in the extraction efficiency of the excitation light by the quantum dot solution. This results in a loss of the excitation light source and a reduction in the absorption and conversion rate of the quantum dot solution, causing low brightness. These problems inevitably impact the light quality and cost of the excitation light source for achieving full-color displays in the excitation microfluidic color conversion layer of Micro-LEDs. Summary of the Invention

[0006] This invention addresses the shortcomings of existing technologies by providing a method and application for depositing quantum dot patterns on rough surfaces based on microfluidic technology.

[0007] To achieve the above objectives, the technical solution of the present invention is as follows:

[0008] A method for depositing quantum dot patterns on rough surfaces based on microfluidic technology includes the following steps:

[0009] 1) Grinding and polishing the surface of the substrate;

[0010] 2) Coat the surface with photoresist, and form a patterned area and a masking area outside the patterned area by exposure and development. Roughen the substrate surface located in the patterned area to form a patterned rough area, and then remove the photoresist.

[0011] 3) Prepare a microfluidic cover plate, the microfluidic cover plate including several through grooves, the through grooves having liquid inlets and liquid outlets, press the microfluidic cover plate onto the surface of the substrate, and after pressing, the through grooves cooperate with multiple patterned rough areas to form microchannels;

[0012] 4) Inject the quantum dot solution into the microchannel until the quantum dot solution fills the patterned rough area of ​​the microchannel, and blow out the excess quantum dot solution from the microchannel.

[0013] 5) Peel off the microfluidic cover plate and cure it with ultraviolet light to obtain the color conversion layer pattern embedded in the substrate;

[0014] 6) A light-shielding layer is formed on the surface between the color conversion layer patterns on the substrate;

[0015] 7) Deposit a protective layer on the surface of the structure formed in step 6).

[0016] Optionally, in step 2), the patterned area is a visible window, on which gold nanoparticles are randomly deposited, and then etched using reactive ion etching technology to form a rough surface, and then the photoresist and gold nanoparticles are removed in sequence.

[0017] Optionally, the irregular deposition of gold nanoparticles involves immersing the substrate with the photoresist mask in a gold nanoparticle solution for 5 to 15 minutes. The size distribution of the gold nanoparticles is irregular, with a size range of 20-100 nm.

[0018] Optionally, the reactive ion etching time is 30s to 90s.

[0019] Optionally, the gold nanoparticles can be removed by soaking in aqua regia for 2 to 5 minutes.

[0020] Optionally, the height difference of the undulations on the rough surface does not exceed 3 micrometers.

[0021] Optionally, in step 2), the patterned area is a partially exposed window, which is retained on several discrete photoresist pillars; the substrate surface is formed by retaining several discrete columnar protrusions after inductively coupled plasma etching, reactive ion etching or wet etching to form a rough surface.

[0022] Optionally, the height difference between the rough surface and the untreated smooth surface of the substrate does not exceed 3 μm, and the size of the columnar protrusions is 3-6 μm, with a spacing of 3-6 μm.

[0023] A Micro-LED full-color display device includes a blue LED chip array, wherein the substrate of the blue LED chip array serves as the substrate described above, and a quantum dot color conversion layer is formed by the method described above, wherein the pattern of the color conversion layer corresponds one-to-one with a single chip of the blue LED chip array.

[0024] A Micro-LED full-color display device includes a quantum dot color conversion substrate formed by the above method and a blue LED chip array, wherein the quantum dot color conversion substrate is bonded to the blue LED chip array, and the color conversion layer pattern corresponds one-to-one with a single chip of the blue LED chip array.

[0025] The beneficial effects of this invention are as follows:

[0026] 1) The color conversion layer substrate (traditional transparent substrate or epitaxial wafer substrate) is ground and polished, and the patterned areas are roughened (the roughened areas can include regular and irregular patterns, and the roughened structure can be regularly or irregularly arranged). The roughened patterned areas of quantum dot deposition can effectively avoid Fresnel light reflection effect, reduce total internal reflection of excitation light on the surfaces of two materials with different refractive indices, and the roughening treatment can enhance light scattering, change the propagation path of incident light, increase the transmission distance of the excitation light source, and thus enhance the absorption of the excitation light source by the quantum dot solution, which is beneficial to improving the light extraction efficiency of the excitation light source and reducing energy consumption. At the same time, the quantum dot solution can absorb more photons, which can further improve the quantum dot light conversion efficiency, improve the light quality, and make the full-color display brighter, suitable for larger-scale full-color display applications;

[0027] 2) By smoothing and roughening the pre-formed quantum dot patterned deposition area, a clear contrast can be formed inside and outside. This allows for a one-to-one correspondence between the red and green quantum dot microchannels and the red and green quantum dot pre-deposited rough patterned areas without the need for traditional alignment mark bonding methods. This reduces a series of cumbersome process steps in alignment mark preparation, simplifies the preparation process, lowers costs, and facilitates the preparation of large-scale quantum dot patterns, thereby promoting the industrialization of full-color Micro-LED.

[0028] 3) Polishing is performed outside the quantum dot solution pre-deposition area. A smooth surface can reduce the retention of quantum dot solution on the surface. Roughening the quantum dot pre-deposition area can improve the retention of quantum dot solution with the substrate. This makes the quantum dot color conversion layer pattern regular and neat, which can achieve high color quality light output and makes it less likely for light mixing to occur between sub-pixels. Attached Figure Description

[0029] Figure 1 A schematic diagram of the Micro-LED chip structure in step 1 of the rough surface quantum dot pattern deposition method for fabricating a Micro-LED full-color display device in Example 1;

[0030] Figure 2 A schematic diagram of step 2 of the process for fabricating a Micro-LED full-color display device using the rough surface quantum dot pattern deposition method of Example 1;

[0031] Figure 3 A schematic diagram of the structure obtained in step 3 of the fabrication of a Micro-LED full-color display device using the rough surface quantum dot pattern deposition method of Example 1;

[0032] Figure 4 and Figure 5 A planar and side view of the structure obtained in step 4 of the rough surface quantum dot pattern deposition method for fabricating a Micro-LED full-color display device in Example 1;

[0033] Figure 6 A planar schematic diagram of the microchannels in step 5 of the rough surface quantum dot pattern deposition method for fabricating a Micro-LED full-color display device in Example 1;

[0034] Figure 7 A schematic diagram of the structure obtained in step 6 of the rough surface quantum dot pattern deposition method for fabricating a Micro-LED full-color display device in Example 1;

[0035] Figure 8 A schematic diagram of the structure obtained in step 7 of the rough surface quantum dot pattern deposition method for fabricating a Micro-LED full-color display device in Example 1;

[0036] Figure 9 A schematic diagram of step 8 in the fabrication of a Micro-LED full-color display device using the rough surface quantum dot pattern deposition method of Example 1;

[0037] Figure 10 A schematic diagram of the structure obtained in step 9 of the rough surface quantum dot pattern deposition method for fabricating a Micro-LED full-color display device in Example 1;

[0038] Figure 11 A schematic diagram of the structure obtained in step 10 of the rough surface quantum dot pattern deposition method of Example 1 for fabricating a Micro-LED full-color display device;

[0039] Figure 12 A schematic diagram of the structure obtained in step 11 of the rough surface quantum dot pattern deposition method for fabricating a Micro-LED full-color display device in Example 1;

[0040] Figure 13 A schematic diagram of steps 3 to 4 of the rough surface quantum dot pattern deposition method for fabricating a Micro-LED full-color display device in Example 2;

[0041] Figure 14 A schematic diagram of step 6 in the fabrication of a MicroL-ED full-color display device using the rough surface quantum dot pattern deposition method of Example 2;

[0042] Figure 15 A schematic diagram of the structure obtained in step 7 of the rough surface quantum dot pattern deposition method for fabricating a MicroL-ED full-color display device in Example 2;

[0043] Figure 16 A schematic diagram of the structure obtained in step 8 of the rough surface quantum dot pattern deposition method for fabricating a MicroL-ED full-color display device in Example 2;

[0044] Figure 17 This is a schematic diagram of the structure obtained in step 9 of the rough surface quantum dot pattern deposition method for fabricating a Micro-LED full-color display device in Example 2. Detailed Implementation

[0045] The present invention will be further explained below with reference to the accompanying drawings and specific embodiments. The accompanying drawings are merely illustrative to facilitate understanding of the invention, and their specific proportions can be adjusted according to design requirements. The vertical relationships of relative elements and the definitions of front / back in the graphics described herein should be understood by those skilled in the art to refer to the relative positions of the components; therefore, they can all be flipped to present the same component, and all of this should fall within the scope disclosed in this specification.

[0046] Example 1

[0047] refer to Figures 1 to 12 The steps of the rough surface quantum dot pattern deposition method in Example 1 are as follows:

[0048] 1. Fabrication of Blue Micro-LED Chip Array 1. Taking a blue epitaxial wafer as an example, various epitaxial thin films, including U-GaN buffer layer, N-GaN layer, MQW layer and P-GaN layer, are successively fabricated on the front side of substrate 11 by MOCVD. A blue micro-LED chip array is then fabricated through cleaning, photolithography, resist coating, development, etching, sputtering, evaporation, and bonding. The peak wavelength of a single chip 1a in this array is 450nm blue light. The structure of Micro-LED chip array 1 is as follows: Figure 1 As shown, it is flip-chip mounted on a CMOS sensor. The substrate 11 can be made of sapphire (Al2O3).

[0049] 2. Substrate Grinding and Polishing. Substrate 1 is thinned and polished using a combination of chemical pressure mechanical polishing and mechanical thinning and grinding methods, resulting in a smooth, lens-like surface. This mitigates the poor adhesion of quantum dot solutions dropped onto a smooth surface. The substrate polishing process is as follows: Figure 2 As shown, the thickness of substrate 11 after thinning and polishing is 200 micrometers.

[0050] 3. Photoresist Mask. Photoresist 2 is used as a mask for spin-coating the back side of substrate 11. Through pre-baking, exposure, reverse baking, general exposure, and development, the patterned area 21 to be roughened is formed, including the window and the surrounding photoresist mask area. The patterned area 21 corresponds one-to-one with a single chip 1a, such as... Figure 3 As shown.

[0051] 4. Roughening of the patterned area. The substrate with the photoresist mask is placed in a solution containing gold nanoparticles (the gold nanoparticles are irregularly distributed and have irregular sizes and shapes, ranging from 20-100 nm). After deposition for 10 minutes, it is etched using RIE (Reactive Ion Etching) for 1 minute. The photoresist is then removed by ultrasonication with ethanol, followed by immersion in aqua regia for 3 minutes to remove the gold nanoparticles. Finally, it is cleaned with ethanol, rinsed with deionized water for 10 minutes, and dried. A roughened patterned area 11a corresponding to the patterned area 21 is formed on the surface of substrate 11. Outside of 11a, the substrate surface remains smooth. A schematic diagram of its planar and side views is shown below. Figure 4 and Figure 5 As shown, the irregular roughened region 11a, i.e., the surface forms irregular bumps and depressions, with a height difference of no more than 3 micrometers from the smooth plane.

[0052] 5. Fabrication of Microfluidic Microchannels. Microfluidic channel cover plates 3 are fabricated using methods such as hot pressing, molding, and injection molding. This technical solution uses a transparent microchannel cover plate as an example for illustration. Figure 6 As shown, the microchannel cover plate 3 includes a strip-shaped microchannel 31 that matches the width of the rough patterned region 11a after the fourth step. The strip-shaped microchannel has inlet / outlet holes at both ends, which are mainly used to inject the quantum dot solution into the rough deposition region.

[0053] 6. Bonding. The RG quantum dot microchannel cover plate 3 is bonded to the patterned rough substrate 11. Since the rough region is clearly distinguishable from the smooth region, direct alignment bonding is possible without alignment marks. After bonding, the edges of each microchannel 31 are tightly bonded to the edges of the rough patterned region 11a. A pressure controller is used to press the two together to prevent swelling. Figure 7 As shown.

[0054] 7. Quantum Solution Injection. A pressure injector is used to inject R and G quantum dot solutions into two independent microchannels 31, causing the rough patterned regions 11a within the channels to be filled with quantum dots, such as... Figure 8 As shown.

[0055] 8. Gas purging. An inert gas (such as nitrogen or argon) at an appropriate pressure is introduced into the microchannel 31 containing the quantum dot solution to purge the solution. Under this pressure, the quantum dot solution remaining on the smooth surface area is discharged from the outlet, while the quantum dots in the rough area are uniformly deposited. Figure 9 As shown.

[0056] 9. Microchannel cover plate 3 peeling. After drying the quantum dot solution deposited in the roughened patterned region 11a, the microchannel cover plate 3 is peeled off and then cured with ultraviolet light to form a regular quantum dot patterned region, such as... Figure 10 As shown.

[0057] 10. Black Matrix Photoresist Patterning. Black matrix opaque photoresist 4 (the photoresist and developing solution will not affect the cured quantum dot solution) is deposited on the smooth area outside the quantum dot deposition area through processes such as photolithography, pre-baking, exposure, reverse baking, overexposure, and development. Then, it undergoes high-temperature hard baking to form a black opaque area and a rough substrate quantum dot patterned area on the smooth substrate. For example... Figure 11 As shown.

[0058] 11. Deposition of protective layer 5. A protective isolation layer 5 of a certain thickness, such as SiO2 or Si3N4, is deposited on the substrate 11 by PECVD (plasma-enhanced chemical vapor deposition). Figure 12 As shown in the figure. This technical solution uses 600nm SiO2 as an example.

[0059] 12. Light-excited full-color display. The bottom blue Micro-LED chip excites the red and green quantum dot patterns to emit red and green light, while the areas without deposited quantum dots emit blue light. The three colors of light can form a full-color display.

[0060] Example 2

[0061] The difference between Example 2 and Example 1 lies in that the quantum dot solution is deposited on a patterned color conversion layer substrate 6 of a roughened transparent glass. The patterned roughened region 61 mainly consists of regularly arranged regular patterns (in this example, regular square pillars are used as an example, but other patterns and arrangements are also possible). The color conversion layer substrate 6 ensures the fabrication of the quantum dot pattern, and its location on the chip improves the reusability of the color conversion layer. The specific implementation process is as follows:

[0062] 1. Substrate Cleaning. The glass substrate 6 was cleaned and soaked in a piranha solution (H₂SO₄:H₂O₂:H₂O = 5:1:1) for 15 minutes, then rinsed with deionized water for 5 minutes. The substrate was then ultrasonically cleaned again in acetone and alcohol solutions for 5 minutes, rinsed with deionized water for 5 minutes, and dried with nitrogen.

[0063] 2. Substrate grinding and polishing. The clean glass substrate 6 is polished on both sides by the method in step (step 2) of Example 1 to reduce the retention force of the quantum dot solution on the smooth substrate.

[0064] 3. Rough patterning treatment of photoresist mask. Photoresist 7 is coated on glass substrate 6, and after steps such as pre-baking, exposure, reverse baking, general exposure, and development, a rough pattern is formed. Figure 13 The photoresist mask pattern shown includes a patterned region 71 to be roughened and an outer photoresist mask area. After development, the patterned region 71 forms a number of discrete photoresist pillars arranged in a regular pattern, such as a photoresist pillar matrix.

[0065] 4. Substrate Etching: A patterned rough region 61 is formed on the substrate 6 by inductively coupled plasma etching (ICP), reactive ion etching (RIE), or wet etching (BOE solution) to create a regularly arranged rough pattern. The patterned rough region 61 corresponds to the etched portion of the patterned region 71. This portion has a height difference of less than 3 micrometers from the substrate surface and has several discretely arranged columnar protrusions. These, together with the etched depressions, form a rough surface. For example, the columnar protrusions are cylinders with a diameter of 3-6 micrometers and a spacing of 3-6 micrometers. Figure 13 As shown.

[0066] 5. Microfluidic microchannel fabrication. The microfluidic chip cover plate 3 is fabricated by compression molding, injection molding and other methods. Referring to Example 1, the width of the microchannel 31 in the cover plate 3 matches the width of the patterned rough area 61 on the glass substrate 6, and the R and G color quantum dot solution microchannels are isolated from each other to reduce mutual contamination. The consistent width of both ensures that the quantum dot solution will not swell.

[0067] 6. Bonding and Quantum Dot Implantation. The bonding process is the same as step (step 6) in Example 1. Microchannels 31 are bonded to patterned rough regions 61 based on the contrast between the roughness and smoothness of the glass substrate surface. Then, quantum dot solution is injected into the patterned rough regions 61 through the microchannel cover plate 3. Figure 14 As shown.

[0068] 7. Quantum dot deposition, purging, and drying / curing in rough areas. The quantum dot solution is injected and deposited into the rough areas using the same method as in steps 8 and 9 of Example 1. Excess quantum dot solution is purged out, and the cover plate 3 is peeled off, followed by drying and curing of the quantum dot pattern. Figure 15 As shown.

[0069] 8. Black photoresist 4 spin-coating and protective layer 5 deposition. The specific process is the same as the steps (steps 10 and 11) in Example 1, and will not be repeated here. Figure 16 As shown.

[0070] 9. The color conversion layer substrate 6 and Micro-LED 8 are bonded together. The patterned rough area 61 quantum dot pattern is vertically aligned with the chip sub-pixels 8a, achieving full-color display under blue light excitation, such as... Figure 17 As shown.

[0071] This invention utilizes a photoresist mask to roughen the area of ​​the pre-deposited quantum dot solution, thereby increasing the roughness of the pre-deposited quantum dot region (the roughened surface includes regular and irregular patterns). The technology mainly consists of three parts:

[0072] 1. Using a smooth substrate after chemical mechanical polishing (or a transparent substrate after mechanical polishing) as the substrate, a photoresist mask is used to roughen the surface, forming a smooth area and a rough area with patterned quantum dot solution pre-deposited. The rough area corresponds one-to-one with the sub-pixels of the Micro-LED chip below the substrate, ensuring that the quantum dot pattern can absorb more light emitted by the sub-pixels of the Micro-LED chip directly below.

[0073] 2. To ensure that the red and green quantum dot solutions are injected into the roughened quantum dot pre-deposition area through the microchannels, the size of the microchannels must correspond one-to-one with the width of the roughened area. The microchannels are bonded to the designated roughened area. Under the action of a pressure controller, this ensures that the quantum dot solution can be injected without overflowing or swelling. The quantum dot solution is then injected through the microchannels and deposited into the roughened area. Once each pixel has been uniformly deposited with quantum dot solution, nitrogen gas is used to purge the solution from the smooth surface, the microchannels are removed, and ultraviolet light is used for curing to form a quantum dot pattern.

[0074] 3. To prevent optical crosstalk, a layer of black matrix photoresist is filled into the smooth areas outside the deposited quantum dot patterns. This photoresist is opaque, ensuring that each quantum dot pattern can emit light independently after absorbing excitation light, thus avoiding optical crosstalk. Finally, a transparent protective layer (such as SiO2 or Si3N4) is deposited on the surface of the quantum dot patterns to prevent the quantum dot solution from being affected by moisture, gases, dust, etc. in the air, thus ensuring good light quality.

[0075] The above embodiments are only used to further illustrate the present invention's method for depositing quantum dot patterns on rough surfaces based on microfluidic technology. However, the present invention is not limited to the embodiments. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention shall fall within the protection scope of the present invention.

Claims

1. A method for depositing quantum dot patterns on rough surfaces based on microfluidic technology, characterized in that, Includes the following steps: 1) Grinding and polishing the surface of the substrate; 2) Coat the surface with photoresist, and form a patterned area and a masking area outside the patterned area by exposure and development. Roughen the substrate surface located in the patterned area to form a patterned rough area, and then remove the photoresist. 3) Prepare a microfluidic cover plate, the microfluidic cover plate including several through grooves, the through grooves having liquid inlet and liquid outlet, press the microfluidic cover plate to the surface of the substrate, after pressing, the through grooves cooperate with multiple patterned rough areas to form microchannels; 4) Inject the quantum dot solution into the microchannel until the quantum dot solution fills the patterned rough area of ​​the microchannel, and blow out the excess quantum dot solution from the microchannel; 5) Peel off the microfluidic cover plate and cure it with ultraviolet light to obtain the color conversion layer pattern embedded in the substrate; 6) A light-shielding layer is formed on the surface between the color conversion layer patterns on the substrate; 7) Deposit a protective layer on the surface of the structure formed in step 6); In step 2), the patterned area is a visible window. Gold nanoparticles are randomly deposited on the surface within the visible window, and then etched using reactive ion etching to form a rough surface. The photoresist and gold nanoparticles are then removed sequentially. The random deposition of gold nanoparticles involves immersing the substrate with the photoresist mask in a gold nanoparticle solution for 5-15 minutes. The size distribution of the gold nanoparticles is irregular, ranging from 20-100 nm. The height difference of the rough surface does not exceed 3 micrometers. In step 2), the patterned area is a partially exposed window, which is retained on several discrete photoresist pillars; after inductively coupled plasma etching, reactive ion etching or wet etching, several discrete columnar protrusions are retained on the substrate surface to form a rough surface: the height difference between the rough surface and the untreated surface of the substrate does not exceed 3μm, the size of the columnar protrusions is 3-6μm, and the spacing is 3-6μm.

2. The method for depositing quantum dot patterns on rough surfaces based on microfluidic technology according to claim 1, characterized in that: The reactive ion etching time is 30s~90s.

3. The method for depositing quantum dot patterns on rough surfaces based on microfluidic technology according to claim 1, characterized in that: The gold nanoparticles were removed by soaking in aqua regia for 2-5 minutes.

4. A Micro-LED full-color display device, characterized in that: The invention includes a blue LED chip array, wherein the substrate of the blue LED chip array serves as the substrate described in claim 1, and a quantum dot color conversion layer is formed by the method described in claim 1, wherein the pattern of the color conversion layer corresponds one-to-one with a single chip of the blue LED chip array.

5. A Micro-LED full-color display device, characterized in that: The invention includes a quantum dot color conversion substrate formed by the method of claim 1 and a blue LED chip array, wherein the quantum dot color conversion substrate is bonded to the blue LED chip array, and wherein the color conversion layer pattern corresponds one-to-one with a single chip of the blue LED chip array.

Citation Information

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