Perovskite assembly with a composite passivation layer and method of preparation thereof

Abstract

The present application relates to a kind of perovskite components with composite passivation layer, perovskite component includes transparent electrode layer, functional layer and metal back electrode layer, a plurality of P3 cutting groove is arranged on perovskite component, the metal back electrode layer and functional layer in each P3 cutting groove are removed respectively, the bottom exposes transparent electrode layer, the surface of metal back electrode layer and the inner surface of P3 cutting groove are covered with composite passivation layer respectively, composite passivation layer includes at least one pair of passivation optical layer, the refractive index of first passivation optical layer located in the surface of lower layer and metal electrode layer contact is greater than the refractive index of second passivation optical layer located on its surface, while also greater than the refractive index of functional layer, the thickness of each passivation optical layer satisfies L=kλ / n.The preparation method of the present application is disclosed.The present application not only passivates P3 cutting area of perovskite component, but also forms reflection-increasing structure in P3 cutting area, and the utilization of light of perovskite component is enhanced.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of perovskite solar cell preparation, and particularly relates to a perovskite module with a composite passivation layer and a preparation method thereof. BACKGROUND

[0002] When a perovskite solar thin film module is subjected to P3 cutting, due to the different laser absorption coefficients of different functional layer materials at a single wavelength, the ablation degree of different functional layer materials is different after irradiation of the same laser beam. In the structure of the perovskite solar thin film module, the top is a metal back electrode, and below the metal back electrode, there are organic, inorganic or polymer functional layer materials. After laser irradiation, the area of the organic and inorganic functional layer ablated is larger, and the area of the metal back electrode ablated is smaller. The ablated components of the organic and inorganic functional layer are in the form of gas, which breaks through the metal back electrode and causes local delamination. At the same time, due to the thermal diffusion effect, there is a temperature difference between the film layers near the cutting area and the film layers far from the cutting area, and the topmost metal back electrode is deformed. Under the combined action of the two factors, the metal back electrode in the P3 cutting area is upturned. In the subsequent module packaging process, the upturned metal back electrode in the P3 cutting area is in direct contact with the transparent conductive electrode below under the action of pressure, causing short circuit of the perovskite module.

[0003] Generally, a passivation layer, usually a metal oxide and a metal nitride, with a thickness of 10 1 nm~10 2 nm, such as aluminum oxide, silicon oxide, silicon nitride, silicon oxynitride, etc., is introduced to passivate the P3 cutting area to avoid short circuit problems.

[0004] The use of a passivation layer to passivate the P3 cutting area of the perovskite module only solves the problem of easy short circuit of the perovskite module, but the P3 cutting area (usually 10 µm~1 mm) is relatively large, and since there is no back electrode with high reflectivity at this position, it is impossible to reflect the incident light. This part is referred to as the "dead zone" of the perovskite module, and the reason is that this part cannot generate electricity, which has a not small impact on the overall power loss of the perovskite module. If the "dead zone" can be utilized to further improve the light utilization rate of the perovskite module, the power generation of the perovskite module will be further improved. SUMMARY

[0005] The technical problem to be solved by the present application is to provide a perovskite module with a composite passivation layer and a preparation method thereof, in which a multilayer composite passivation layer structure of insulating optical thin film is formed on the surface of the metal back electrode layer of the perovskite module. This structure not only realizes the passivation of the P3 cutting groove area of the perovskite module, but also forms an anti-reflection structure in the P3 cutting groove area, thereby enhancing the light utilization rate of the perovskite module.

[0006] The present application is implemented by providing a perovskite assembly with a composite passivation layer, the internal structure of the perovskite assembly sequentially includes a transparent electrode layer, a functional layer and a metal back electrode layer from bottom to top, a plurality of P3 cutting grooves are arranged on the perovskite assembly, the P3 cutting grooves divide the perovskite assembly into a plurality of sub-cells, the metal back electrode layer and the functional layer in each P3 cutting groove are removed respectively, the bottom of which exposes the transparent electrode layer, the surface of the metal back electrode layer and the inner surface of the P3 cutting groove (including the sidewall and the bottom surface) are respectively covered with a composite passivation layer, the composite passivation layer includes at least one pair of passivation optical layers, the refractive index of the first passivation optical layer in contact with the surface of the metal electrode layer in the lower layer is greater than the refractive index of the second passivation optical layer on its surface, and also greater than the refractive index of the functional layer, and the thickness of each passivation optical layer satisfies the following conditions:

[0007] L=kλ / n,

[0008] In the formula, L is the film thickness of the passivation optical layer, k is a constant, λ is the wavelength of incident light, and n is the refractive index of the passivation optical layer.

[0009] The present application is implemented by providing a preparation method of the perovskite assembly with a composite passivation layer as described above, including a method for preparing a composite passivation layer, the method for preparing a composite passivation layer includes the following steps:

[0010] Step one, using the ICPECVD (inductively coupled plasma enhanced chemical vapor deposition system) method to deposit and prepare the first passivation optical layer on the surface of the metal back electrode layer of the perovskite assembly which has completed P3 cutting, so that the first passivation optical layer not only covers the surface of the metal back electrode layer but also covers the inner surface of the P3 cutting groove;

[0011] Step two, using the PEALD (plasma enhanced atomic layer deposition system) method to deposit and prepare the second passivation optical layer on the surface of the first passivation optical layer;

[0012] Step three, repeating step one and step two, sequentially depositing and preparing the remaining pairs of passivation optical layers on the surface of the second passivation optical layer until the composite passivation layer is completed.

[0013] Compared with the prior art, the perovskite assembly with a composite passivation layer and the preparation method thereof have the following characteristics:

[0014] 1. The P3 cutting area of the perovskite thin film assembly is passivated to prevent the metal back electrode layer from contacting the bottom transparent electrode layer and causing short circuit;

[0015] 2. The reflective structure formed by the composite passivation layer can reflect the incident light multiple times, increasing its optical path within the perovskite module, improving the light utilization rate of the perovskite module, and further enhancing the power generation of the perovskite module. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the internal structure of a perovskite component with a composite passivation layer according to Embodiment 1 of the present invention;

[0017] Figure 2 This is a schematic diagram of the internal structure of a perovskite component with a composite passivation layer according to Embodiment 2 of the present invention;

[0018] Figure 3 This is a schematic diagram of the internal structure of a perovskite component with a composite passivation layer according to Embodiment 3 of the present invention;

[0019] Figure 4 The test curves show the performance comparison between the perovskite module with and without the composite passivation layer in Example 4. Detailed Implementation

[0020] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0021] Example 1

[0022] Please refer to Figure 1 As shown, this invention provides a first embodiment of a perovskite module with a composite passivation layer. The internal structure of the perovskite module A, from bottom to top, includes a transparent electrode layer 1, a functional layer 2, and a metal back electrode layer 3. Multiple P3 dicing grooves 4 are formed on the perovskite module, dividing it into multiple sub-cells. The metal back electrode layer 3 and functional layer 2 are removed from each P3 dicing groove 4, exposing the transparent electrode layer 1 at their bottom. A composite passivation layer 5 is applied to the surface of the metal back electrode layer 3 and the inner surfaces (including sidewalls and bottom) of the P3 dicing grooves 4.

[0023] The composite passivation layer 5 includes at least one pair of passivation refractive layers. The refractive index n1 of the first passivation refractive layer 6, which is in contact with the surface of the metal electrode layer, is greater than the refractive index n2 of the second passivation refractive layer 7, which is located on its upper surface, and is also greater than the refractive index n0 of the functional layer 2, i.e., n0 <n1>n2. Moreover, the thickness of each passivation layer satisfies the following condition:

[0024] L = kλ / n,

[0025] wherein L is the film thickness of the passivation layer, k is a constant, λ is the wavelength of incident light, and n is the refractive index of the passivation layer.

[0026] In the present application, k is 0.25, and the unit of L is nm.

[0027] The thickness of the first passivation layer 6 is in the order of 10 nm, and is prepared using the ICPECVD method. 2 The thickness of the second passivation layer 7 is in the order of 10 nm, and is prepared using the PEALD method. 1

[0028] Because the refractive index of the composite passivation layer 5 is different from that of the functional layer 2, the incident light, as shown by the arrow line, is reflected multiple times at the composite passivation layer 5 in the P3 cutting groove 4 region after passing through the functional layer 2, thereby increasing the optical path in the perovskite component A and improving the light utilization rate of the perovskite component, and further improving the power generation of the perovskite component. At the same time, the passivation problem of the P3 cutting groove is solved, and the erosion of water and oxygen to the functional layer is prevented.

[0029] In Figure 1 , the metal back electrode layer 3 on both sides of the P3 cutting groove 4 is deformed by warping when laser cutting, and part of it is warped from the functional layer 2 and separated from the functional layer 2 to form a gap. When the composite passivation layer 5 is prepared, the composite passivation layer 5 also covers and fills the gap, preventing the warped metal back electrode 3 at the P3 cutting groove 4 region from directly contacting the lower transparent conductive electrode layer 1 under the action of pressure in the subsequent component packaging process, causing short-circuit defects of the perovskite component.

[0030] Example 2

[0031] Please refer to Figure 2 ​As shown, the second embodiment of the perovskite module with a composite passivation layer of the present application. The difference between this embodiment and embodiment 1 is that the composite passivation layer 5 comprises two pairs of passivation refractive layers stacked together. The first pair of passivation refractive layers comprises a first passivation refractive layer 6 in contact with the surface of the metal electrode layer 3 and a second passivation refractive layer 7 on the surface of the first passivation refractive layer 6, and the second pair of passivation refractive layers comprises a third passivation refractive layer 8 on the surface of the second passivation refractive layer 7 and a fourth passivation refractive layer 9 on the surface of the third passivation refractive layer 8. Among them, the refractive index n1 of the first passivation refractive layer 6 is not only greater than the refractive index n2 of the second passivation refractive layer 7, but also greater than the refractive index n0 of the functional layer 2; the refractive index n3 of the third passivation refractive layer 8 is not only greater than the refractive index n2 of the second passivation refractive layer 7, but also greater than the refractive index n4 of the fourth passivation refractive layer 9. That is: n0 <n1>n2, n2 <n3>n4.

[0032] Other structures are similar to those in Example 1, and will not be described in detail here.

[0033] Example 3

[0034] Please refer to Figure 3 As shown, this is a third embodiment of the perovskite component with a composite passivation layer of the present invention. The difference between this embodiment and Embodiment 1 is that the composite passivation layer 5 comprises three pairs of passivation refractive layers stacked together. The first pair of passivation refractive layers includes a first passivation refractive layer 6 in contact with the surface of the metal electrode layer 3 and a second passivation refractive layer 7 located on its upper surface. The second pair of passivation refractive layers includes a third passivation refractive layer 8 located on the surface of the second passivation refractive layer 7 and a fourth passivation refractive layer 9 located on its upper surface. The third pair of passivation refractive layers includes a fifth passivation refractive layer 10 located on the surface of the fourth passivation refractive layer 9 and a sixth passivation refractive layer 11 located on its upper surface. Among them, the refractive index n1 of the first passivation refractive layer 6 is not only greater than the refractive index n2 of the second passivation refractive layer 7, but also greater than the refractive index n0 of the functional layer 2; the refractive index n3 of the third passivation refractive layer 8 is not only greater than the refractive index n2 of the second passivation refractive layer, but also greater than the refractive index n4 of the fourth passivation refractive layer 9; the refractive index n5 of the fifth passivation refractive layer 10 is not only greater than the refractive index n4 of the fourth passivation refractive layer 9, but also greater than the refractive index n6 of the sixth passivation refractive layer 11. That is: n0 <n1>n2, n2 <n3>n4, n4 <n5>n6.

[0035] Other structures are similar to those of Embodiment 1, and will not be described again.

[0036] The application also discloses a preparation method of the perovskite component with the composite passivation layer as described above, comprising a preparation method of the composite passivation layer 5, which comprises the following steps:

[0037] Step one, using the ICPECVD method to deposit and prepare the first passivation refractive layer 6 on the surface of the metal back electrode layer 3 of the perovskite component A which has completed the P3 cutting, so that the first passivation refractive layer 6 not only covers the surface of the metal back electrode layer 3 but also covers the inner surface of the P3 cutting groove 4.

[0038] Step two, using the PEALD method to deposit and prepare the second passivation refractive layer 7 on the surface of the first passivation refractive layer 6.

[0039] Step three, repeating step one and step two, and sequentially depositing and preparing the remaining pairs of passivation refractive layers on the surface of the second passivation refractive layer 7 until the composite passivation layer 5 is completed.

[0040] In the application, the preparation material of the composite passivation layer 5 is SiN x or SiO x N y .

[0041] Specifically, the preparation method of the composite passivation layer 5 comprises the following steps:

[0042] Step 1, respectively introducing the first reaction gas-silane (SiH4) and the second reaction gas-nitrous oxide (N2O) or ammonia (NH3) into the deposition cavity of the ICPECVD control system, or introducing the carrier gas, which is at least one of hydrogen (H2), nitrogen (N2) or argon (Ar).

[0043] Moreover, the gas flow ratio of the first reaction gas to the carrier gas is 0.75, the gas flow ratio of the first reaction gas to the second reaction gas is 0.2-1.1, the plasma radio frequency power ranges from 20 mW / cm 2 to 200 mW / cm 2 , the temperature of the perovskite component is 40-200℃, and the reaction gas pressure is 200-1000 mTorr.

[0044] Step 2, the deposition cavity of the PEALD control system is respectively connected with a reaction precursor source, a plasma source and a carrier gas source, wherein the reaction precursor source is at least one of trichloroethylsilane (Si2H3Cl3), hexachloroethylsilane (Si2Cl6), silane (SiH4) or pentachlorodisilane (Si2HCl5), the plasma source is any one of a mixed gas of ammonia (NH3) and nitrogen (N2), a mixed gas of ammonia (NH3) and argon (Ar) or a mixed gas of nitrous oxide (N2O) and nitrogen (N2), and the carrier gas source is at least one of hydrogen (H2), nitrogen (N2) or argon (Ar).

[0045] Moreover, the gas flow ratio of the plasma source to the carrier gas source is 1:3, the plasma radio frequency power ranges from 10 mW / cm 2 to 100 mW / cm 2 , the temperature of the perovskite component is 40℃-200℃, and the reaction gas pressure is 100 mTorr-2000 mTorr.

[0046] The preparation method of the composite passivation layer of the present application will be further illustrated by specific examples.

[0047] Example 4

[0048] Please refer to Figure 2 , the first embodiment of the preparation method of the composite passivation layer of the present application comprises the following steps:

[0049] Step 11, the perovskite component A after P3 cutting is put into the deposition cavity of the ICPECVD control system, and the first reaction gas-silane (SiH4) and the second reaction gas-ammonia (NH3) are respectively introduced, so as to deposit and prepare the first passivation refractive layer 6 on the surface of the metal back electrode layer 3, so that the first passivation refractive layer 6 not only covers the surface of the metal back electrode layer 3 but also covers the inner surface of the P3 cutting groove 4.

[0050] Wherein, the metal back electrode layer 3 is a gold electrode, the refractive index n0 of the functional layer 2 is generally <1.5, the radio frequency power is 60 mW / cm 2 , the flow rate of the first reaction gas is 300 sccm, the flow rate of the second reaction gas is 400 sccm, the reaction time is 200 s, the substrate temperature of the perovskite component is 100℃, and finally a 100 nm SiN film is deposited and prepared as the first passivation refractive layer 6, and the refractive index n1 of the SiN film is 1.83.

[0051] Step 12, a second passivation and light-refraction layer 7 is prepared by depositing on the surface of the SiN thin film using a PEALD method. The reaction precursor source is trichlorosilane (Si2H3Cl3), the plasma source is a mixture of NH3 / N2 (30 / 90 sccm, 99.9999%), and the carrier gas source is Ar gas. The plasma power is 20 mW / cm 2 .

[0052] The PEALD deposition cycle is as follows: a 0.1-second injection of the reaction precursor source is performed, followed by a 120-second flushing of the reaction precursor source, and then the plasma source is injected; after 5 seconds, when the gas pressure is stable, the radio frequency matcher is turned on, the radio frequency power is 20 mW / cm 2 , the minimum reflected power is less than 2 watts, the process is maintained for 10 seconds, the plasma source is turned off, and a 30-second flushing is performed to complete one cycle. During the process, the substrate of the perovskite assembly is kept at a heating state of 40℃, and the cycle is repeated until a Si2N thin film with a thickness of 10 nm and a refractive index n2 of 1.53 is obtained as the second passivation and light-refraction layer 7.

[0053] Step 13, repeat step 11 to deposit and prepare a third passivation and light-refraction layer 8 on the surface of the second passivation and light-refraction layer 7.

[0054] Step 14, repeat step 12 to deposit and prepare a fourth passivation and light-refraction layer 9 on the surface of the third passivation and light-refraction layer 8.

[0055] The perovskite assembly with the composite passivation layer obtained in this embodiment (i.e., the P3 emission layer assembly) and the perovskite assembly without the composite passivation layer (i.e., the control assembly) are compared and tested for performance, and the JV curve comparison is shown in Figure 4 From the performance comparison curve, it can be clearly seen that the perovskite assembly with the composite passivation layer of this embodiment has a higher photocurrent and a higher photoelectric efficiency than the perovskite assembly without the composite passivation layer.

[0056] Example 5

[0057] Referring again to Figure 3 , a second embodiment of the preparation method of the composite passivation layer of the present application includes the following steps:

[0058] Step 21, the perovskite assembly A after P3 cutting is placed into the deposition cavity of the ICPECVD control system, and a first reaction gas, i.e., silane (SiH4), a second reaction gas, i.e., nitrous oxide (N2O), and a carrier gas, i.e., hydrogen (H2), are introduced respectively to deposit and prepare a first passivation and light-refraction layer 6 on the surface of the metal back electrode layer 3, so that the first passivation and light-refraction layer 6 not only covers the surface of the metal back electrode layer 3 but also covers the inner surface of the P3 cutting groove 4.

[0059] The metal back electrode layer 3 is a silver electrode, the refractive index n0 of the functional layer 2 is generally less than 1.5, 20 mW / cm 2 of radio frequency power is used, the flow rate of the first reaction gas is 20 sccm, the flow rate of the second reaction gas is 100 sccm, the flow rate of the carrier gas is 30 sccm, the reaction time is 400 s, the substrate temperature of the perovskite component is 150°C, and finally, a 100 nm SiO x N y thin film is prepared as the first passivation refractive layer 6, and the refractive index n1 of the SiO x N y thin film is 2.6.

[0060] Step 22: a second passivation refractive layer 7 is prepared by using a PEALD method to deposit on the surface of the SiN thin film. The reaction precursor source is silane (SiH4), the plasma source is N2O / N2 mixed gas (30 / 90 sccm, 99.9999%), and the carrier gas source is N2 gas. The plasma power is 20 mW / cm 2 .

[0061] The PEALD deposition cycle is as follows: the reaction precursor source injection is performed for 0.1 s, the reaction precursor source is flushed for 120 s, and then the plasma source is injected; after 5 s, when the gas pressure is stable, the plasma generator is turned on, the radio frequency power is 20 mW / cm 2 , the minimum reflection power is less than 2 W, the process is maintained for 10 s, the plasma source is turned off, and the flushing is performed for 30 s to complete one cycle. During the process, the substrate of the perovskite component is kept at 80°C in a heated state, and the cycle is repeated until a 10 nm SiO x N y thin film with a refractive index of 1.94 is obtained as the second passivation refractive layer 7.

[0062] Step 23: the step 21 is repeated to deposit and prepare a third passivation refractive layer 8 on the surface of the second passivation refractive layer 7.

[0063] Step 24: the step 22 is repeated to deposit and prepare a fourth passivation refractive layer 9 on the surface of the third passivation refractive layer 8.

[0064] Step 25: the step 23 is repeated to deposit and prepare a fifth passivation refractive layer 10 on the surface of the fourth passivation refractive layer 9.

[0065] Step 26: the step 22 is repeated to deposit and prepare a sixth passivation refractive layer 11 on the surface of the fifth passivation refractive layer 10.

[0066] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A perovskite assembly with a composite passivation layer, the internal structure of the perovskite assembly comprises a transparent electrode layer, a functional layer and a metal back electrode layer from bottom to top, a plurality of P3 cutting grooves are arranged on the perovskite assembly, the P3 cutting grooves divide the perovskite assembly into a plurality of sub-cells, the metal back electrode layer and the functional layer in each P3 cutting groove are removed respectively, and the bottom exposes the transparent electrode layer, characterized in that, The surface of the metal back electrode layer and the inner surface of the P3 cutting groove are covered with a composite passivation layer, which includes at least one pair of passivation optical layers, the refractive index of the first passivation optical layer in contact with the surface of the metal electrode layer is greater than the refractive index of the second passivation optical layer on its surface, and is also greater than the refractive index of the functional layer, and the thickness of each passivation optical layer satisfies the following condition: L=kλ / n, wherein L is the film thickness of the passivation optical layer, k is a constant, λ is the wavelength of incident light, and n is the refractive index of the passivation optical layer; The thickness of the first passivation refractive layer is 10 2 nm order of magnitude, and the thickness of the second passivation refractive layer is 10 1 nm order of magnitude.

2. The perovskite assembly of claim 1, wherein the composite passivation layer comprises a first layer of a first material and a second layer of a second material, the first material and the second material being different. The composite passivation layer includes two pairs of passivation optical layers stacked together, the first pair of passivation optical layers includes a first passivation optical layer in contact with the surface of the metal electrode layer and a second passivation optical layer on the surface of the first passivation optical layer, and the second pair of passivation optical layers includes a third passivation optical layer on the surface of the second passivation optical layer and a fourth passivation optical layer on the surface of the third passivation optical layer, wherein the refractive index of the first passivation optical layer is greater than that of the second passivation optical layer, and is also greater than that of the functional layer, and the refractive index of the third passivation optical layer is greater than that of the second passivation optical layer, and is also greater than that of the fourth passivation optical layer.

3. The perovskite assembly with a composite passivation layer of claim 1, wherein, The composite passivation layer includes three pairs of passivation optical layers stacked together, the first pair of passivation optical layers includes a first passivation optical layer in contact with the surface of the metal electrode layer and a second passivation optical layer on the surface of the first passivation optical layer, the second pair of passivation optical layers includes a third passivation optical layer on the surface of the second passivation optical layer and a fourth passivation optical layer on the surface of the third passivation optical layer, and the third pair of passivation optical layers includes a fifth passivation optical layer on the surface of the fourth passivation optical layer and a sixth passivation optical layer on the surface of the fifth passivation optical layer, wherein the refractive index of the first passivation optical layer is greater than that of the second passivation optical layer, and is also greater than that of the functional layer, the refractive index of the third passivation optical layer is greater than that of the second passivation optical layer, and is also greater than that of the fourth passivation optical layer, and the refractive index of the fifth passivation optical layer is greater than that of the fourth passivation optical layer, and is also greater than that of the sixth passivation optical layer.

4. A method for producing a perovskite assembly having a composite passivation layer as claimed in any one of claims 1 to 3, characterized in that The method for preparing the composite passivation layer includes the following steps: Step one, using the ICPECVD method to deposit and prepare the first passivation optical layer on the surface of the metal back electrode layer of the perovskite component which has completed P3 cutting; Step two, using the PEALD method to deposit and prepare the second passivation optical layer on the surface of the first passivation optical layer; Step three, repeating step one and step two to sequentially deposit and prepare the remaining pairs of passivation optical layers on the surface of the second passivation optical layer until the composite passivation layer is completed.

5. The method for preparing a perovskite component with a composite passivation layer as described in claim 4, characterized in that, The preparation material of the composite passivation layer is SiN x or SiO x N y .

6. The method for preparing a perovskite component with a composite passivation layer as described in claim 5, characterized in that, The method includes the following steps: Step 1, introducing the first reaction gas-silane and the second reaction gas-nitrogen monoxide or ammonia, or introducing the carrier gas, which is at least one of hydrogen, nitrogen or argon, into the deposition cavity of the ICPECVD control system.

7. The method for preparing a perovskite component with a composite passivation layer as described in claim 6, characterized in that, The gas flow ratio of the first reaction gas to the carrier gas is 0.75, the gas flow ratio of the first reaction gas to the second reaction gas is 0.2-1.1, the plasma radio frequency power ranges from 20mW / cm 2 to 200mW / cm 2 , and the reaction gas pressure is 200mTorr-1000mTorr.

8. The method for preparing a perovskite component with a composite passivation layer as described in claim 5, characterized in that, The method includes the following steps: Step 2, respectively introducing a reaction precursor source, a plasma source and a carrier gas source into a deposition cavity of the PEALD control system, wherein the reaction precursor source is at least one of trichloroethylsilane, hexachloroethylsilane, silane or pentachlorodisilane, the plasma source is any one of a mixture of ammonia and nitrogen, a mixture of ammonia and argon or a mixture of nitrous oxide and nitrogen, and the carrier gas source is at least one of hydrogen, nitrogen or argon.

9. The method for preparing a perovskite component with a composite passivation layer as described in claim 8, characterized in that, The gas flow ratio of the plasma source to the carrier gas source is 1:3, the plasma radio frequency power ranges from 10 mW / cm 2 ~100 mW / cm 2 , and the reaction gas pressure is 100 mTorr~2000 mTorr.

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