Substrate processing method

Abstract

A substrate processing method is disclosed. The substrate processing method of the present invention is characterized by comprising the steps of: placing a wafer section on a chuck table; loading the wafer section on the chuck table; spraying a first processing liquid to the wafer section by a spray arm module to process the wafer section; spraying a second processing liquid to the wafer section by the spray arm module to process the wafer section; drying the wafer section on the chuck table; and unloading the wafer section from the chuck table.

Description

Technical Field

[0001] This invention relates to a substrate processing method, and more specifically, to a substrate processing method that can reduce the processing time of the wafer portion and improve the processing and cleaning performance of the wafer portion. Background Technology

[0002] Typically, semiconductor processes include etching processes for etching wafer portions, separation processes for cutting wafer portions into multiple dies, and cleaning processes for cleaning wafer portions. Substrate processing equipment is used for etching or cleaning processes on wafer portions.

[0003] The substrate processing apparatus is rotatable and consists of a rotating stage on which a wafer portion is placed, a sealing ring annularly attached to the edge region of the rotating stage, etc. While the rotating stage is rotating, processing fluid is supplied to the wafer portion placed on the rotating stage.

[0004] The background technology of this invention is disclosed in Korean Patent Publication No. 10-2016-0122067 (published on October 21, 2016, entitled: Wafer Processing Apparatus and Sealing Ring for Wafer Processing Apparatus). Summary of the Invention

[0005] The present invention is proposed to solve the above-mentioned problems. The purpose of the present invention is to provide a substrate processing method that can reduce the processing time of the wafer section and improve the processing and cleaning performance of the wafer section.

[0006] The substrate processing method of the present invention is characterized by comprising the following steps: placing a wafer portion on a chuck stage; loading the wafer portion onto the chuck stage; spraying a first processing liquid onto the wafer portion by a spray arm module to process the wafer portion; spraying a second processing liquid onto the wafer portion by the spray arm module to process the wafer portion; drying the wafer portion on the chuck stage; and unloading the wafer portion from the chuck stage.

[0007] The step of placing the wafer portion on the chuck stage may include the following steps: the transfer device holds the wafer portion transferred from the second transfer module; and as the transfer device descends, the wafer portion is placed on the chuck stage.

[0008] The step of loading the wafer portion onto the chuck stage may include the following steps: as the chuck module of the chuck stage is driven, the wafer limiting part restricts the retaining ring of the wafer portion; and as the moving module moves the vacuum chuck part of the chuck stage, the wafer portion is pulled in the radial direction to increase the spacing between the plurality of dies of the wafer portion.

[0009] The step of unloading the wafer portion from the chuck stage may include the following steps: as the moving module returns the vacuum chuck portion of the chuck stage to its original position, the wafer portion returns to its original state; and as the chuck module of the chuck stage is driven, the wafer restraint portion releases the restraint on the retaining ring portion of the wafer portion.

[0010] The step of processing the wafer by spraying a first processing liquid onto the wafer by the spray arm module may include the following steps: the spray arm module moves upward toward the wafer; and the spray arm module swings within a predetermined angle range and sprays the first processing liquid onto the wafer.

[0011] The first treatment solution can be deionized water (DI water).

[0012] In the step of processing the wafer by spraying a second processing liquid onto the wafer by the spray arm module, the spray arm module can swing within a predetermined angle range and spray the second processing liquid onto the wafer.

[0013] The second cleaning solution can be a mixture of deionized water and nitrogen (N2).

[0014] The step of drying the wafer portion in the chuck stage may include the following steps: the jet arm module moves outward from the chuck stage; and the wafer portion is dried as the chuck stage rotates.

[0015] According to the present invention, even in a confined space, the transfer device can receive the wafer portion from the second transfer module and place it on the chuck stage, and can discharge the processed wafer portion from the chuck stage.

[0016] Furthermore, according to the present invention, as the tilting device rotates, the annular cover can be easily secured to and released from the chuck stage device. Moreover, the chuck module of the chuck stage device can quickly secure and release the annular cover. Therefore, the processing and cleaning time of the wafer section can be reduced.

[0017] Furthermore, according to the present invention, the jet arm module and the jet suction arm module process the wafer portion, thus allowing the wafer portion to be processed using various types of processing or cleaning solutions. Therefore, the wafer portion processing steps can be performed in multiple ways.

[0018] Furthermore, according to the present invention, the chuck stage apparatus includes: a wafer limiting section for limiting a retaining ring section of the wafer portion; a cover limiting section for limiting an annular cover section; and a moving module for moving the vacuum chuck section to pull the wafer portion radially. Therefore, a wafer expansion process can be performed whereby the wafer portion is processed while the wafer limiting section limits the retaining ring section of the wafer portion to the chuck stage and the moving module moves the vacuum chuck section to expand the spacing between the dies in the wafer portion. Furthermore, a stripping and cleaning process can be performed whereby the wafer portion is processed while the cover limiting section limits the annular cover section to the upper side of the vacuum chuck section.

[0019] Furthermore, according to the present invention, the moving module moves the vacuum chuck section to widen the spacing between the dies in the wafer section. Therefore, foreign matter adhering to the surface of the dies and foreign matter located in the gaps between multiple dies can be easily removed by the cleaning fluid. Thus, the cleaning performance of the wafer section can be significantly improved, and the defect rate of the wafer section can be significantly reduced. Attached Figure Description

[0020] Figure 1 A top view of a wafer portion according to an embodiment of the present invention is shown for illustrative purposes.

[0021] Figure 2 A block diagram of a substrate processing apparatus according to an embodiment of the present invention is provided for illustrative purposes.

[0022] Figure 3 A top view of a vision corrector in a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0023] Figure 4 A top view is shown for brevity in a substrate processing apparatus according to an embodiment of the present invention, showing a first processing chamber and a second processing chamber.

[0024] Figure 5 A side view of the transmission device in a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0025] Figure 6 A top view of the transmission device in a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0026] Figure 7 A side view of the clamping portion in the transfer device of a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0027] Figure 8 A side view is shown to briefly illustrate the state in which the clamping section is extended in the transfer device of a substrate processing apparatus according to an embodiment of the present invention.

[0028] Figure 9 A side view of the tilting device in a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0029] Figure 10 A side view is provided to briefly show the state of the holding unit in the tilting device of a substrate processing apparatus according to an embodiment of the present invention in a lowered state.

[0030] Figure 11 A top view of the holding unit of the tilting device in a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0031] Figure 12 A rear view of the holding unit of the tilting device in a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0032] Figure 13 An enlarged view of the holding unit of the tilting device in a substrate processing apparatus according to an embodiment of the present invention is shown for illustrative purposes.

[0033] Figure 14 A cross-sectional view of the chuck stage assembly in a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0034] Figure 15 This is a cross-sectional view showing the state in which the vacuum chuck section is moved by the moving module in the chuck stage device of a substrate processing apparatus according to an embodiment of the present invention.

[0035] Figure 16 A cross-sectional view is shown for brevity in the chuck stage of a substrate processing apparatus according to an embodiment of the present invention.

[0036] Figure 17 This diagram is intended to briefly illustrate the state in which the wafer portion is stretched in the radial direction in the chuck stage apparatus of a substrate processing apparatus according to an embodiment of the present invention.

[0037] Figure 18 An enlarged view of the chuck module of the chuck stage device in a substrate processing apparatus according to an embodiment of the present invention is shown for illustrative purposes.

[0038] Figure 19 This is a cross-sectional view showing the state in which the wafer limiting portion of the chuck module restricts the wafer portion in the chuck stage apparatus of a substrate processing apparatus according to an embodiment of the present invention.

[0039] Figure 20 A perspective view of the wafer restraint portion of the chuck module in the chuck stage apparatus of a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0040] Figure 21 A top view of the processing liquid spraying device of a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0041] Figure 22A perspective view is provided for illustrating the spray arm module in the processing liquid spraying device of a substrate processing apparatus according to an embodiment of the present invention.

[0042] Figure 23 An enlarged view of the first spray nozzle portion of the spray arm module in the processing liquid spraying device of a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0043] Figure 24 An enlarged view is shown for the purpose of briefly illustrating the second jet nozzle portion and the second suction nozzle portion of the jet suction arm module in the processing liquid jetting device of the substrate processing apparatus according to an embodiment of the present invention.

[0044] Figure 25 The diagram illustrates, for brevity, the suction tank portion connected to the second suction nozzle portion of the jet suction arm module in the processing liquid jetting device of a substrate processing apparatus according to an embodiment of the present invention.

[0045] Figure 26 The figure illustrates a substrate processing method according to an embodiment of the present invention.

[0046] Figure 27 The flowchart below briefly illustrates a substrate processing method according to an embodiment of the present invention.

[0047] Explanation of reference numerals in the attached figures

[0048] 10: Wafer section; 11: Wafer; 12: Bonding sheet; 13: Clamping ring section; 20: Wafer box; 30: Buffer unit; 40: Vision corrector; 41: Corrector stage; 50: First transfer module; 60: Second transfer module; 70: First processing chamber; 80: Second processing chamber; 102: Ion generator; 100: Transfer device; 120: Lifting unit; 130: Transfer unit; 140: Clamping unit; 141: Clamping drive unit; 142: Pinion gear unit; 145: First rack unit; 146: Second rack unit; 147: Finger part; 200: Tilting device; 201: Annular cover unit; 202: Fixing hole unit; 203: Restricting hole unit; 210: Tilting motor unit; 220: Tilting unit; 230: Lifting unit; 240: Holding unit Unit; 241: Central component; 243: Floating plate; 251: Cam linkage; 255: Linkage drive; 256: Locking part; 300: Chuck stage device; 310: Chuck drive; 320: Rotary chuck; 325: Moving module; 326: Medium flow path; 327: Moving rod; 330: Vacuum chuck; 331: First vacuum chuck; 333: Second vacuum chuck; 335: Vacuum chamber; 350: Chuck module; 360: First chuck linkage; 370: Wafer limiting part; 380: Second chuck linkage; 390: Cover limiting part; 400: Processing liquid injection device; 402: Arm drive; 410: Injection arm module; 420: Injection suction arm module; 440: Suction tank; 450: Injector part. Detailed Implementation

[0049] An embodiment of the substrate processing method of the present invention will be described below with reference to the accompanying drawings. During the description of the substrate processing method, for clarity and convenience, the thickness of lines or the dimensions of structural elements shown in the drawings may be enlarged. Furthermore, the terminology used below is defined in consideration of its function in the present invention, and may vary depending on the intent or convention of the user or application personnel. Therefore, the definition of such terminology should be based on the entire contents of this specification.

[0050] Figure 1 For the purpose of briefly showing a top view of the wafer portion according to an embodiment of the present invention, Figure 2 To briefly illustrate a block diagram of a substrate processing apparatus according to an embodiment of the present invention, Figure 3 A top view is shown for brevity of a vision aligner in a substrate processing apparatus according to an embodiment of the present invention.

[0051] Reference Figures 1 to 3In one embodiment of the present invention, a substrate processing apparatus 1 processes a wafer portion 10. The wafer portion 10 of the annular frame, etched in the etching process, is cut into a matrix shape in the separation process. The annular frame wafer portion 10 includes: a wafer 11 comprising a plurality of dies arranged in a matrix shape; an adhesive sheet 12 for attaching the wafer 11; and a retaining ring 13 connected to the periphery of the adhesive sheet 12 to support the adhesive sheet 12 in a taut state. The adhesive sheet 12 is formed of a material that is stretchable along the horizontal direction. As the adhesive sheet 12 is tightened by the retaining ring 13, the plurality of dies are positioned, and the dies of the thin plate maintain a flat state. Hereinafter, the annular frame wafer portion 10 will be referred to as the wafer portion 10.

[0052] The wafer pod 20 is a front-opening unified pod (FOUP) that houses multiple wafer units 10 within a sealed internal space and allows the wafer units 10 to move between unit process equipment. The wafer pod 20, being transported to the unit process equipment, is placed on the upper surface of a loading port module (not shown) located on one side of the unit process equipment, sealing the internal space of the wafer pod 20 from the outside while keeping the wafer unit pod door (not shown) open. This prevents contamination of the wafer units 10 from the external environment and facilitates movement between unit process equipment.

[0053] The wafer portion 10 loaded in the wafer cassette 20 is adsorbed by the first transfer module 50 and loaded into the buffer unit 30. The buffer unit 30 includes two front slots (not shown) and two rear slots (not shown). The first transfer module 50 may employ a vacuum adsorption robot that adsorbs the wafer portion 10 by vacuum pressure.

[0054] The wafer portion 10, loaded in the buffer unit 30, is carried by the vision corrector 40 via the first transfer module 50. The vision corrector 40 includes: a corrector stage 41 for placing the wafer portion 10; and a vision unit (not shown) that illuminates the corrector stage 41 to read the wafer portion 10. The vision corrector 40 is capable of rotating approximately 4° about the center of the corrector stage 41 and moving approximately 7 mm to the left or right about the center of the corrector stage 41. The position of the wafer portion 10 and the center of the wafer 11 can be read in the vision unit to align the position of the wafer portion 10. In this case, the vision unit reads whether the center of the wafer 11 coincides with the center of the retaining ring 13 and aligns the wafer portion 10 so that the center of the wafer 11 is aligned in the accurate position.

[0055] The wafer portion 10, aligned in the vision corrector 40, is transferred to the first processing chamber 70 and the second processing chamber 80 via the second transfer module 60. In the first processing chamber 70, a processing liquid is sprayed onto the wafer portion 10 to process it. Multiple second processing chambers 80 are provided. In the second processing chambers 80, a processing liquid is sprayed onto the wafer portion 10, and foreign matter floating above the processing liquid is simultaneously drawn in, thus processing the wafer portion 10.

[0056] Figure 4 A top view is shown for brevity in a substrate processing apparatus according to an embodiment of the present invention, showing a first processing chamber and a second processing chamber.

[0057] Reference Figure 4 The first processing chamber 70 is equipped with an ion generator 102, a transmission device 100, a tilting device 200, a chuck table device 300, a jetting device 400, and a suction device 500. The second processing chamber 80 is equipped with an ion generator 102, a transmission device 100, a tilting device 200, a chuck table device 300, and a jetting device 400.

[0058] Ion generators 102 are respectively disposed on the upper side of the first processing chamber 70 and the second processing chamber 80. Ion generators 102 remove static electricity generated during processing and non-processing steps of the wafer section 10. Ion generators 102 prevent static electricity from generating inside the wafer section 10, the first processing chamber 70 and the second processing chamber 80, and therefore prevent foreign matter from re-attaching to the wafer section 10 due to static electricity.

[0059] If air is supplied as the supply gas to the ion generator 102 and deionized water (DI water) is supplied as the cleaning solution, the cations and anions ionized by the ion generator 102 can be sprayed together with the cleaning solution onto the upper part of the wafer section 10.

[0060] Before spraying deionized water containing both cations and anions onto the upper part of the wafer section 10, the measured electrostatic potential of the wafer section 10 was approximately 3.6 kV. Conversely, after spraying deionized water containing both cations and anions onto the upper part of the wafer section, the measured electrostatic potential was approximately -0.10 kV to -0.17 kV. For this negative voltage, the electrostatic potential of the wafer section 10 can be controlled to an ideal value close to "0" by increasing the (+) ion generation of the ion generator 102.

[0061] Figure 5 For the purpose of briefly showing a side view of the transmission device in a substrate processing apparatus according to an embodiment of the present invention, Figure 6 For the purpose of briefly showing a top view of the transmission device in a substrate processing apparatus according to an embodiment of the present invention, Figure 7To briefly show a side view of the clamping portion in the transfer device of a substrate processing apparatus according to an embodiment of the present invention, Figure 8 A side view is shown to briefly illustrate the state in which the clamping section is extended in the transfer device of a substrate processing apparatus according to an embodiment of the present invention.

[0062] Reference Figures 5 to 8 The transfer device 100 is disposed on both sides of the chuck stage device 300. The transfer device 100 places the wafer portion 10 transferred by the second transfer module 60 on the upper side of the chuck stage device 300.

[0063] The transmission device 100 includes a lifting part 120, a transmission part 130, and a clamping part 140.

[0064] The lifting unit 120 is located on the outer side of the chuck tables 320 and 330. A pair of lifting units 120 are provided on both sides of the chuck tables 320 and 330 in the diametrical direction. The lifting unit 120 is located on the lower side of the base portion 110. The lifting unit 120 can be constructed using various methods, such as ball screw, linear motor, or belt drive.

[0065] The transmission unit 130 is connected to the lifting unit 120 for lifting via the lifting unit 120, and is disposed on the outside of the chuck tables 320 and 330. The transmission unit 130 is respectively provided on the lifting unit 120. The transmission unit 130 is disposed on the upper side of the base unit 110.

[0066] The clamping section 140 is reciprocally movable in the transfer section 130 so as to hold or place the wafer section 10. The clamping sections 140 are respectively provided in a pair of transfer sections 130. The pair of clamping sections 140 support both sides of the annular frame section 15 of the wafer section 10. The clamping section 140 receives the wafer section 10 transferred by the second transfer module 60, and as it descends through the lifting section 120, the clamping section 140 is placed on the chuck stages 320, 330.

[0067] The lifting unit 120 and the transfer unit 130 are disposed on the outside of the chuck stages 320 and 330. The clamping unit 140 is disposed side by side with the lifting unit 120 and the transfer unit 130 in the vertical direction. Therefore, the installation space of the clamping unit 140 and the movement trajectory of the clamping unit 140 can be significantly reduced. Thus, even in a confined space, the wafer portion 10 can be received from the second transfer module 60 and placed on the chuck stages 320 and 330, and the processed wafer portion 10 can be discharged from the chuck stages 320 and 330.

[0068] The lifting unit 120 includes: a lifting arm drive unit 402 disposed below the transmission unit 130; a power transmission unit 123 connected to the lifting arm drive unit 402; and a linear guide unit 124 connected to the power transmission unit 123 to cause the transmission unit 130 to move up and down. The lifting arm drive unit 402 may be disposed outside the housing unit 121, while the power transmission unit 123 and the linear guide unit 124 are disposed inside the housing unit 121. When the lifting arm drive unit 402 transmits power to the power transmission unit 123, the transmission unit 130 can move in the vertical direction as the linear guide unit 124 moves up and down within the housing unit 121.

[0069] The lifting arm drive unit 402 can be a motor unit. The power transmission unit 123 can be a ball screw that rotates through the lifting arm drive unit 402.

[0070] The linear guide 124 includes: a fixed guide 125 arranged side-by-side in the vertical direction on the lifting arm drive 402; a movable guide 126 connected to the fixed guide 125 in a liftable manner and connected to the power transmission unit 123 for movement via the power transmission unit 123; and a lifting rod 127 connected to the movable guide and the transmission unit 130. The fixed guide 125 can be a fixed track arranged side-by-side in the vertical direction inside the housing 121. The movable guide 126 is slidably connected to the fixed guide 125. The lifting rod 127 is provided in the housing 121 for movement in the vertical direction. When the lifting arm drive 402 is driven, the movable guide 126 moves along the fixed guide 125, and the lifting rod 127 moves via the movable guide 126. Therefore, the vertical stroke of the transmission unit 130 can be accurately controlled.

[0071] The clamping part 140 includes a clamping drive part 141, one or more pinion parts 142, multiple rack parts 145, 146 and finger parts 147.

[0072] The clamp drive unit 141 is provided in the transmission unit 130. The clamp drive unit 141 can be a hydraulic cylinder, a ball screw, or a motor with a drive mechanism, etc.

[0073] At least one pinion gear 142 is provided and connected to the clamp drive 141 for movement via the clamp drive 141.

[0074] Multiple rack portions 145 and 146 are provided to mesh with a pinion portion 142 and are moved by the rotation of the pinion portion 142. The rack portions 145 and 146 are movably provided on both sides of the pinion portion 142. When there is one pinion portion 142, two rack portions 145 and 146 can be provided to mesh with both sides of the pinion portion 142. When there are two pinion portions 142, three rack portions 145 and 146 can be provided to mesh with both pinion portions 142.

[0075] The finger-shaped portion 147 extends from a rack portion 146 to hold the wafer portion 10. In this case, the finger-shaped portion 147 is located at the rack portion 146 furthest from the transmission portion 130 when the jig drive portion 141 is driven.

[0076] The clamping part 140, which is provided with a small gear part 142 and two rack parts 145 and 146, will be described below.

[0077] A pinion serration (not shown) is formed on the outer surface of the pinion portion 142. In this case, the plurality of rack portions 145, 146 include: a first rack portion 145, which is provided to mesh with the pinion portion 142; and a second rack portion 146, which is provided to mesh with the pinion portion 142, and reciprocates by rotating the pinion portion 142, and a finger portion 147 extends from the second rack portion 146. In this case, the pinion portion 142 is disposed between the first rack portion 145 and the second rack portion 146. Furthermore, the pinion serration of the pinion portion 142 is provided to mesh with the upper side of the first rack portion 145 and the lower side of the second rack portion 146.

[0078] The first rack portion 145 is fixed to the outer cover portion 131 of the transmission portion 130, and the second rack portion 146 moves by the translation and rotation of the pinion portion 142. If the clamp drive portion 141 is driven, the pinion portion 142 simultaneously performs translational and rotational movements along the first rack portion 145. Therefore, the second rack portion 146 moves a certain distance through the translational distance and rotational movement of the pinion portion 142. Thus, the clamp drive portion 141 can move the second rack portion 146 approximately twice the distance that the pinion portion 142 moves. Therefore, compared with the stroke of the clamp drive portion 141, the stroke of the finger portion 147 can be significantly increased.

[0079] The pinion section 142 includes: a slider section 143 connected to the clamp drive section 141, configured to reciprocate between the first rack section 145 and the second rack section 146; and a pinion gear 144 rotatably engaged with the slider section 143, moving together with the slider section 143 to move the second rack section 146. The slider section 143 is arranged side by side with the first rack section 145 and the second rack section 146. When the clamp drive section 141 is driven, the pinion gear 144 and the slider section 143 translate together along a linear direction, meshing with the first rack section 145 to perform a rotational motion.

[0080] The clamp drive unit 141 includes: a cylinder unit 141a disposed in the transmission unit 130; a moving rod unit 141b movably disposed in the cylinder unit 141a; and a connecting rod unit 141c connected to the moving rod unit 141b and the slider unit 143. The connecting rod unit 141c extends upward from the moving rod unit 141b of the cylinder unit 141a and connects to the slider unit 143. The connecting rod unit 141c moves in a linear direction via the moving rod unit 141b of the cylinder unit 141a. As the moving rod unit 141b moves, the slider unit 143 moves.

[0081] The finger-shaped portion 147 includes a vacuum adsorption portion 148 that holds the wafer portion 10 by vacuum adsorption. The finger-shaped portion 147 may have two or more vacuum adsorption portions 148. The vacuum adsorption portion 148 vacuum adsorbs the annular frame portion 15 of the wafer portion 10. A vacuum flow path portion (not shown) may be formed inside the finger-shaped portion 147 to create a vacuum in the vacuum adsorption portion 148.

[0082] Figure 9 For the purpose of briefly showing a side view of the tilting device in a substrate processing apparatus according to an embodiment of the present invention, Figure 10 To briefly illustrate the lowered state of the holding unit in the tilting device of a substrate processing apparatus according to an embodiment of the present invention, a side view is provided. Figure 11 To briefly illustrate a top view of the holding unit of the tilting device in a substrate processing apparatus according to an embodiment of the present invention, Figure 12 To briefly illustrate the rear view of the holding unit of the tilting device in a substrate processing apparatus according to an embodiment of the present invention, Figure 13 An enlarged view of the holding unit of the tilting device in a substrate processing apparatus according to an embodiment of the present invention is shown for illustrative purposes.

[0083] Reference Figures 9 to 13 The tilting device 200 includes a tilting motor 210, a tilting unit 220, a lifting unit 230, and a holding unit 240.

[0084] A chuck table assembly 300 is provided on the lower side of the tilting device 200. The chuck table assembly 300 is configured to be rotatable by the chuck drive unit 310. The chuck drive unit 310 may be a motor unit with a drive mechanism, gear drive mechanism, or the like.

[0085] The chuck stage assembly 300 is disposed on the upper side of the rotating shaft portion 311, and is rotated via the rotating shaft portion 311. The wafer portion 10 and other wafer portions 10 are placed in the vacuum chuck portion 330. A plurality of chuck pin portions 303 are provided protruding around the vacuum chuck portion 330 to fix the annular cover portion 201.

[0086] The tilting device 200 holds the annular cover 201 and engages it with the chuck table assembly 300. Multiple fixing holes 202 are formed on the lower periphery of the annular cover 201 to insert multiple chuck pins 303 when the annular cover 201 is placed on the chuck table assembly 300. Furthermore, multiple limiting grooves 203 are formed on the outer periphery of the annular cover 201 (see reference). Figure 17 The wafer portion 10 is held by the holding unit 240. Multiple limiting grooves 203 are formed opposite to the locking pins 259 of the holding unit 240. An annular cover 201 is sealed around the wafer portion 10 of the vacuum chuck portion 330 to prevent the processing liquid from penetrating into the periphery of the wafer portion 10 and the interior of the annular cover 201 when the wafer portion 10 is being processed.

[0087] The tilting unit 220 is rotatably connected to the tilting shaft 212 of the tilting motor 210. A tilting arm 222 is formed in the tilting unit 220 to connect with the tilting shaft 212 of the tilting motor 210. The tilting unit 220 remains upright in a waiting state. When the annular cover 201 engages with the periphery of the vacuum chuck 330, the tilting motor 210 rotates the tilting unit 220 horizontally upwards towards the vacuum chuck 330. A setting module (not shown) is provided in the tilting unit 220 to set the initial horizontal position of the holding unit 240, so that it is horizontally positioned at the engagement position of the annular cover 201 of the holding unit 240.

[0088] A lifting unit 230 is disposed in the tilting unit 220. The lifting unit 230 is disposed at the center of the tilting unit 220. The lifting rod portion 233 of the lifting unit 230 is disposed such that it moves through the center of the tilting unit 220. A plurality of lifting guide portions 235 are provided in the tilting unit 220 to guide the lifting of the lifting unit 230.

[0089] The holding unit 240 is connected to the lifting unit 230 for lifting and lowering via the lifting unit 230, and is used to hold the annular cover portion 201. Before the wafer portion 10 is placed in the vacuum chuck portion 330, the holding unit 240 is in a waiting state with the annular cover portion 201 held vertically.

[0090] If the wafer 10 is placed in the vacuum chuck section 330, the tilting unit 220 and the holding unit 240 rotate horizontally as driven by the tilting motor section 210. When the tilting unit 220 and the holding unit 240 stop rotating, the holding unit 240 moves downwards from the tilting unit 220 as driven by the lifting unit 230. In this case, the tilting unit 220 does not descend with the lifting unit 230, but remains horizontal.

[0091] As the holding unit 240 descends, the annular cover 201 is placed on the vacuum chuck section 330. The holding unit 240 maintains its descending state via the lifting unit 230 to keep the annular cover 201 engaged with the vacuum chuck section 330 until the annular cover 201 is fully chucking into the chuck module 350 of the vacuum chuck section 330 (see reference). Figure 15 ).

[0092] If the engagement of the annular cover 201 is completed in the vacuum chuck section 330, the holding unit 240 moves upward and contacts or slightly separates from the lower side of the tilting unit 220 as the lifting unit 230 is driven. If the holding unit 240 moves completely upward, the tilting unit 220 and the holding unit 240 rotate in a vertical or nearly vertical waiting state as the tilting motor section 210 is driven.

[0093] The position correction unit 260 is provided in a way that allows for play (floating) between the lifting unit 230 and the holding unit 240, so as to correct the engagement deviation of the holding unit 240 when the annular cover portion 201 is engaged with the vacuum chuck portion 330. The engagement deviation is the deviation between the locking pin portion 259 of the holding unit 240 and the limiting groove portion 203 of the annular cover portion 201 when the annular cover portion 201 of the holding unit 240 is engaged.

[0094] The position correction unit 260 includes a thrust portion 261 and an elastic component 268.

[0095] Multiple thrust portions 261 are connected to the lifting component 135 and the floating plate 243 so that when the annular cover 201 is locked, the floating plate 243 has a clearance corresponding to the engagement deviation. An elastic component 268 is provided in the central component 241 to apply a spring force to the floating plate 243 so that when the annular cover 201 is unlocked, the floating plate 243 returns to its original position.

[0096] When the holding unit 240 lowers via the lifting unit 230 to engage the annular cover portion 201 with the vacuum chuck portion 330, a slight misalignment may occur as the fixing hole portion 202 of the annular cover portion 201 slightly deviates from the chuck pin portion 303 of the vacuum chuck portion 330. In this case, the position correction unit 260 allows the holding unit 240 to have play in the horizontal direction within the engagement misalignment range.

[0097] As described above, the tilting unit 220 and the gripping unit 240 can be rotated by the tilting motor 210. Therefore, the height (level) of the gripping unit 240 and the engagement position of the sealing ring can be precisely set by precisely controlling the rotation angle of the tilting motor 210. Furthermore, the gripping unit 240 and the tilting unit 220 are initially set at the engagement position of the annular cover 201. Therefore, the time required to set the gripping position of the gripping unit 240 can be significantly reduced.

[0098] The tilting unit 220 is rotatably mounted on the tilting motor unit 210, so that the tilting motor unit 210 remains in its current state when a malfunction or static electricity occurs. Therefore, in the event of a malfunction or static electricity, the tilting unit 220 and the holding unit 240 can be prevented from falling and colliding with the vacuum chuck unit 330.

[0099] Furthermore, the holding unit 240 is disposed in the lifting unit 230 in a manner that allows for clearance via the position correction unit 260. Therefore, even when the holding unit 240 is slightly deviated, the position correction unit 260 can correct the engagement deviation of the holding unit 240 when engaging the annular cover portion 201 with the vacuum chuck portion 330. This prevents wear caused by engagement deviation between the annular cover portion 201 and the chuck pin portion 303 of the vacuum chuck portion 330, thereby preventing the generation of foreign matter in the chuck pin portion 303 and the annular cover portion 201. Furthermore, it prevents foreign matter from flowing into the wafer portion 10 processed below the holding unit 240 and the annular cover portion 201, thus minimizing contamination or defects in the wafer portion 10.

[0100] Furthermore, the tilting motor 210 tilts and rotates the tilting unit 220 and the gripping unit 240, thus reducing the number of drive elements required. Consequently, the manufacturing cost of the processing apparatus for the wafer section 10 can be reduced.

[0101] The lifting unit 230 includes a lifting drive unit 231 and a lifting component 235.

[0102] A lifting drive unit 231 is provided in the tilting unit 220. The lifting drive unit 231 includes a lifting cylinder part 232 and a lifting rod part 233 that is provided in a lifting manner in the lifting cylinder part 232. A lifting component 235 is fixed to the lower side of the lifting rod part 233. If fluid flows into the lifting cylinder part 232, the lifting rod part 233 moves downward; if fluid is discharged from the lifting cylinder part 232, the lifting rod part 233 moves upward.

[0103] The lifting component 235 is connected to the lifting drive unit 231 and the holding unit 240 to lift and lower via the lifting drive unit 231, and the position correction unit 260 is provided in such a way that the holding unit 240 has play. The lifting component 235 includes a lifting plate portion 236 that is spaced apart from the holding unit 240. A connecting groove portion 237 is formed in the center of the lifting plate portion 236 to engage the lifting rod portion 233 of the lifting drive unit 231.

[0104] The holding unit 240 includes a central component 241, a floating plate 243, multiple cam linkages 251, a linkage drive unit 255, and a locking unit 256.

[0105] The central component 241 is disposed on the lower side of the lifting component 235. The central component 241 is spaced apart from the lower side of the lifting component 235 and is disposed at the center of the lifting component 235. Multiple central ribs (not shown) are radially protruding around the central component 241. The central component 241 is arranged in a manner that allows it to rotate by a predetermined angle along the circumference of the floating plate 243.

[0106] A floating plate 243 is attached to the lower side of the central component 241 and connected to the position correction unit 260. The floating plate 243 is disc-shaped and faces the vacuum chuck portion 330. The floating plate 243 is positioned to contact the lower side of the lifting component 235. A guide hole 246 is formed through the periphery of the floating plate 243 so that when the cam connecting rod portion 251 rotates, the locking portion 256 moves linearly in the radial direction of the floating plate 243.

[0107] Multiple cam link portions 251 are radially connected to the central component 241. Each cam link portion 251 is connected to the central component 241. The cam link portions 251 are fixed to the central component 241 by multiple fastening bolts (not shown). The cam link portions 251 are in the shape of a straight plate.

[0108] The connecting rod drive unit 255 is connected to the cam connecting rod portion 251 and the floating plate 243 to move the plurality of cam connecting rod portions 251. One side of the connecting rod drive unit 255 is fixed to the floating plate 243, and the other side of the connecting rod drive unit 255 is connected to one cam connecting rod portion 251. The connecting rod drive unit 255 includes a connecting rod cylinder portion 255a and a connecting rod portion 255b movably disposed in the connecting rod cylinder portion 255a. As fluid flows into the connecting rod cylinder portion 255a, the connecting rod portion 255b is drawn out from the connecting rod cylinder portion 255a; as fluid is discharged from the connecting rod cylinder portion 255a, the connecting rod portion 255b is introduced into the connecting rod cylinder portion 255a.

[0109] Locking parts 256 are respectively provided on multiple cam link parts 251, and lock and unlock the annular cover part 201 when the multiple cam link parts 251 move. Around the floating plate 243, a locking part 256 is connected to each cam link part 251.

[0110] When the linkage drive unit 255 is driven, the central member 241 rotates together with the plurality of cam link units 251. That is, as the linkage drive unit 255 is driven, one cam link unit 251 connected to the linkage drive unit 255 rotates by a predetermined angle around the center of the floating plate 243. As one cam link unit 251 rotates by a predetermined angle, the central member 241 rotates in the circumferential direction of the floating plate 243, therefore, the plurality of cam link units 251 simultaneously rotate in the circumferential direction by a predetermined angle. As the plurality of cam link units 251 rotate, the plurality of locking units 256 simultaneously lock and unlock the annular cover 201 to hold the annular cover 201. In this case, the floating plate 243 does not rotate.

[0111] The cam link portion 251 includes: a cam rod portion 252, radially connected to the central member 241; and a cam portion 253, connected to the cam rod portion 252, forming an elongated hole portion 254 to allow the locking portion 256 to move. In this case, the cam portion 253 is plate-shaped, and the elongated hole portion 254 is inclined relative to the rotation radius of the cam portion 253. The cam rod portion 252 is connected to the link portion 255b of the link drive portion 255. As the link drive portion 255 is driven, the cam rod portion 252 and the cam portion 253 rotate by a predetermined angle. As the cam portion 253 rotates, the locking portion 256 can move along the elongated hole portion 254 and move linearly in the radial direction of the floating plate 243. Therefore, the locking portion 256 locks and unlocks the annular cover portion 201 by performing linear movement.

[0112] The locking part 256 includes: a sliding part 257 movably engaged with the elongated hole 254; a locking guide part 258 connected to the sliding part 257 for linear movement when the sliding part 257 moves; and a locking pin part 259 disposed on the locking guide part 258 for locking and unlocking the annular cover 201 when the locking guide part 258 moves. The sliding part 257 is a sliding roller that rolls into contact with the elongated hole 254. The locking guide part 258 is linearly movably disposed in a guide hole 246 formed around the floating plate 243. The locking pin part 259 extends protruding from the inside of the locking guide part 258. The end of the locking pin part 259 is in various shapes, such as a conical shape, to be inserted into the limiting groove 203 of the annular cover 201.

[0113] The locking guide portion 258 includes: a guide shaft portion 258a connected to a sliding portion 257 and movably disposed in a guide hole portion 246 of the floating plate 243; a guide member 258b connected to the guide shaft portion 258a and provided with a locking pin portion 259; and a plurality of guide roller portions 258c disposed to support both sides of the guide member 258b. The guide shaft portion 258a is axially coupled to the sliding portion 257, the guide member 258b is rectangular, and two or more guide roller portions 258c are disposed on both sides of the guide member 258b. An insertion groove (not shown) is formed around the guide roller portion 258c for insertion into the side portion of the guide member 258b. As the connecting rod drive portion 255 moves the cam connecting rod portion 251, the sliding portion 257 and the guide shaft portion 258a move linearly in the radial direction, and as the guide shaft portion 258a moves, the guide member 258b moves along the guide hole portion 246. In this case, when the guide member 258b moves, a plurality of guide rollers 258c rotate and support the guide member 258b.

[0114] The elongated hole 254 of the locking part 256 is formed obliquely in the circumferential direction of the floating plate 243. The sliding part 257 is inserted into the elongated hole 254, and the guide shaft part 258a is inserted into the straight guide hole 246. Therefore, as the cam connecting rod part 251 rotates to one side, the sliding part 257 and the guide shaft part 258a move towards one end of the elongated hole 254. As the guide member 258b moves towards the center of the floating plate 243, the locking pin part 259 is inserted into the limiting groove 203 of the annular cover part 201 and locks (holds) the annular cover part 201. Furthermore, as the cam link 251 rotates to the other side, the sliding part 257 and the guide shaft part 258a move toward the other end of the elongated hole 254. As the guide member 258b moves toward the outside of the floating plate 243, the locking pin part 259 separates from the limiting groove part 203 of the annular cover part 201 and releases the annular cover part 201 from its locking (restriction).

[0115] The tilting device 200 also includes a docking portion 270 movably disposed on one side of the chuck stages 320 and 330 to prevent the tilting device 200 from tilting when the wafer portion 10 is engaged and fixed to the chuck stages 320 and 330. The docking portion 270 is disposed on the docking frame portion 271. The tilting device 200 includes an extension arm portion 224 extending from the tilting device 200 and a pressing portion 225 disposed at the end of the extension arm portion 224. The pressing portion 225 includes a pressing rib protruding downward toward the docking portion 270.

[0116] Therefore, the docking portion 270 restricts the pressed portion 225 of the tilting device 200 to prevent the tilting device 200 from tilting. Thus, when the holding unit 240 descends via the lifting unit 130 and engages the wafer portion 10 with the chuck stages 320 and 330, the position of the wafer portion 10 can be prevented from changing. Furthermore, the generation of foreign objects can be prevented by preventing wear on the fixing hole portion 202 and the chuck pin portion 303 of the wafer portion 10.

[0117] The docking section 270 includes a docking drive section 173 disposed on the docking frame section 271 and a docking pressure section 175 that moves via the docking drive section 173 to restrict the tilting device 200. The docking drive section 173 is disposed in a manner movable in the forward, backward, and up / down directions to apply downward pressure to the pressed portion 225 of the tilting device after the tilting device 200 has been completely lowered by the lifting unit 130. The docking drive section 173 can employ various methods to restrict the tilting device 200 by moving the docking pressure section 175.

[0118] Figure 14 For the purpose of briefly showing a cross-sectional view of the chuck stage assembly in a substrate processing apparatus according to an embodiment of the present invention, Figure 15 To briefly illustrate the state in which the vacuum chuck section is moved by the moving module in the chuck stage assembly of a substrate processing apparatus according to an embodiment of the present invention, a cross-sectional view is provided. Figure 16 To briefly illustrate a cross-sectional view of the moving module in the chuck stage of a substrate processing apparatus according to an embodiment of the present invention, Figure 17 The diagram is intended to briefly illustrate the state in which the wafer portion is stretched in the radial direction within the chuck stage apparatus of a substrate processing apparatus according to an embodiment of the present invention. Figure 18 For the purpose of briefly showing an enlarged view of the chuck module of the chuck stage assembly of a substrate processing apparatus according to an embodiment of the present invention, Figure 19 This is a cross-sectional view showing the state in which the wafer restraint portion of the chuck module restricts the wafer portion in the chuck stage apparatus of a substrate processing apparatus according to an embodiment of the present invention. Figure 20 A perspective view of the wafer restraint portion of the chuck module in the chuck stage apparatus of a substrate processing apparatus according to an embodiment of the present invention is shown for brevity.

[0119] Reference Figures 14 to 20The chuck stage device 300 includes a rotary chuck section 320, a vacuum chuck section 330, a chuck module 350, and a moving module 325.

[0120] The chuck drive unit 310 includes a rotating shaft 311 connected to the rotation center of the chuck tables 320 and 330, and a chuck motor unit 313 disposed on the rotating shaft 311. The chuck motor unit 313 includes a stator (not shown) disposed inside an outer casing (not shown), and a rotor (not shown) disposed inside the stator, surrounding the rotating shaft 311. Furthermore, the chuck drive unit 310 can also employ a belt drive method to rotate the rotating shaft 311 via a belt, or a chain drive method to rotate the rotating shaft 311 via a chain.

[0121] A vacuum flow path 315 for creating a vacuum in the vacuum chuck portion 330 is formed on the rotating shaft 311. The vacuum flow path 315 is formed along the length direction of the rotating shaft 311. A vacuum chamber 335 connected to the vacuum flow path 315 is formed in the vacuum chuck portion 330.

[0122] The chuck stages 320 and 330 include a rotary chuck section 320 and a vacuum chuck section 330.

[0123] The rotary chuck section 320 is rotatably mounted on the chuck drive section 310. The rotary chuck section 320 can be generally disc-shaped.

[0124] The vacuum chuck section 330 is placed on the rotary chuck section 320. The wafer section 10 is carried in the vacuum chuck section 330. The vacuum chuck section 330 is generally disk-shaped and is placed on top of the rotary chuck section 320. When the chuck drive section 310 is driven, the vacuum chuck section 330 and the rotary chuck section 320 rotate together.

[0125] In this case, during the etching process, multiple wafer portions 10 with uncut dies 11 are placed in the vacuum chuck section 330. During the cleaning process, multiple wafer portions 10 with cut dies 11 are placed in the vacuum chuck section 330. When the dies 11 are cut from the wafer portions 10, foreign matter may remain on the surface of the dies 11 and in the gaps between the dies 11.

[0126] The moving module 325 is configured to move either the vacuum chuck section 330 or the chuck module 350 to increase the spacing between the dies 11 in the wafer section 10. When the moving module 325 moves while the chuck module 350 has the retaining ring 13 of the wafer section 10 fixed to the periphery of the vacuum chuck section 330, the wafer section 10 is pressurized by the movement of the moving module 325. In this case, as the bonding pad 12 of the wafer section 10 is pulled radially, the bonding pad 12 is stretched radially, and the spacing G2 between the dies 11 increases. If cleaning fluid is sprayed onto the dies 11 while the spacing G2 between the dies 11 is increased, foreign matter adhering to the surface of the dies 11, and even foreign matter located in the gaps between the dies 11, can be easily removed by the cleaning fluid. Therefore, the cleaning performance of foreign matter in the wafer section 10 can be significantly improved. Furthermore, as the cleaning performance of the wafer section 10 is significantly improved, the defect rate of the wafer section 10 can be significantly reduced.

[0127] The moving module 325 includes a medium flow path 326 and a moving lever 327. The medium flow path 326 is formed to supply a moving medium to the chuck drive unit 310. The medium flow path 326 can be arranged inside the rotation shaft 311 along the length direction of the rotation shaft 311. The moving medium can be air or gas. The moving lever 327 is raised and lowered by the pressure of the moving medium and is arranged to contact the lower part of the vacuum chuck unit 330. A return spring can be provided in the moving lever 327 to return the moving medium to its original position when the pressure of the moving medium is released. Multiple moving levers 327 and medium flow path 326 can be arranged along the circumference of the rotation shaft 311. When multiple moving levers 327 raise and lower the vacuum chuck unit 330, the vacuum chuck unit 330 can be raised and lowered while maintaining a horizontal state.

[0128] Of course, in addition to the moving rod part 327, the moving module 325 can also be a cylinder part or a solenoid part, etc.

[0129] The vacuum chuck section 330 includes a first vacuum chuck 331 and a second vacuum chuck 333. The first vacuum chuck 331 is disposed in the rotary chuck section 320 such that it rotates together with the rotary chuck section 320, and a vacuum chamber 335 is formed therein. The first vacuum chuck 331 generates a vacuum pressure to adsorb the wafer section 10. The second vacuum chuck 333 is supported on the first vacuum chuck 331 and is provided with an annular cover 201, and is disposed such that it can be moved by a moving module (not shown).

[0130] The second vacuum chuck 333 has a plurality of adsorption holes (not shown) that communicate with the medium flow path 315 of the first vacuum chuck 331 to adsorb the wafer portion 10. The plurality of adsorption holes can be arranged in a concentric circle shape along the circumference of the second vacuum chuck 333. If a vacuum pressure is formed in the medium flow path 315, the wafer portion 10 can be tightly attached to the upper surface of the second vacuum chuck 333 by means of the vacuum adsorption force of the adsorption holes.

[0131] The chuck stage device 300 includes a chuck module 350, which is disposed in the rotary chuck section 320, fixes the wafer section 10 to the vacuum chuck section 330, and fixes the annular cover section 201 to the rotary chuck section 320.

[0132] The chuck module 350 includes a chuck base 351, a chuck rotating part 355, a plurality of first chuck linkage parts 360, a plurality of wafer limiting parts 370, a plurality of second chuck linkage parts 380, and a plurality of cover limiting parts 390.

[0133] A chuck base 351 is disposed in the rotary chuck section 320. A chuck rotation section 355 is connected to the chuck base 351 to allow the chuck base 351 to rotate. A plurality of first chuck linkage sections 360 are radially connected to the chuck base 351 and move when the chuck base 351 rotates. A plurality of wafer restraint sections 370 are connected to the first chuck linkage sections 360 to fix the retaining ring section 13 of the wafer section 10 to the vacuum chuck section 330 when the first chuck linkage sections 360 move. The chuck base 351 is disposed concentrically with the rotary chuck section 320. The chuck base 351, the chuck rotation section 355, and the first chuck linkage sections 360 are disposed inside the rotary chuck section 320, and the wafer restraint sections 370 are disposed around the rotary chuck section 320 and the vacuum chuck section 330.

[0134] If the chuck rotation part 355 is driven, the multiple first chuck linkage parts 360 move in the radial direction of the chuck base 351 as the chuck base 351 rotates by a predetermined angle. As the multiple first chuck linkage parts 360 move simultaneously, the multiple wafer restraint parts 370 press and fix the retaining ring part 13 of the wafer part 10 to the periphery of the first vacuum chuck 331.

[0135] The chuck base 351 includes a base body 352, multiple guide parts 353, and a base gear part 354.

[0136] The base body portion 352 is annularly arranged concentrically with the rotation axis 311 of the rotary chuck portion 320. The base body portion 352 is disposed inside the rotary chuck portion 320. A plurality of guide portions 353 are formed on the base body portion 352 for movably engaging with the first chuck link portion 360. The number of guide portions 353 is twice the number of first chuck link portions 360, and they are formed at equal intervals along the circumference of the base body portion 352. The first chuck link portion 360 engages with the plurality of guide portions 353 in a one-to-one manner. A base gear portion 354 is formed on the base body portion 352 and connected to the chuck rotation portion 355. The base gear portion 354 is arranged in an arc shape on the inner circumferential surface of the base body portion 352. Driven by the chuck rotating part 355, the base gear part 354 rotates. As the base body part 352 and the base gear part 354 rotate together, the first chuck connecting rod part 360 moves in the radial direction of the base body part 352.

[0137] The guide portion 353 is formed at an angle relative to the radius of the base body portion 352. The guide portion 353 can be a guide hole, a guide groove, or a guide protrusion. Because the guide portion 353 is formed at an angle relative to the radius of the base body portion 352, as the base body portion 352 rotates by a predetermined angle, the first chuck linkage portion 360 moves linearly in the radial direction of the base body portion 352.

[0138] The first chuck linkage 360 ​​includes a first guide slider 361, a first linkage member 362, and a first linkage gear 363. The first guide slider 361 is movably coupled to the guide portion 353. The first linkage member 362 is connected to the first guide slider 361 and moves linearly along the radial direction of the base body portion 352 when the first guide slider 361 moves. The first linkage member 362 is in the shape of a straight rod. The first linkage gear 363 is formed on the first linkage member 362 in a manner that engages with the wafer restraint portion 370 and moves accordingly. The first linkage gear 363 is in the shape of a rack parallel to the length direction of the first linkage member 362.

[0139] The first chuck linkage portion 360 also includes a first guide block 364 that is linearly movable to the first linkage member 362. The first guide block 364 prevents the first linkage member 362 from rotating in the circumferential direction of the base body portion 352 when the base body portion 352 rotates. Therefore, if the base body portion 352 rotates and the first guide slider 361 moves along the guide portion 353, the first linkage member 362 can move linearly without rotating.

[0140] The wafer restraint section 370 includes a pressure clamping section 375. When the clamping linkage section 373 moves, the pressure clamping section 375 rotates to apply pressure to and release pressure on the retaining ring section 13 of the wafer section 10. The pressure clamping section 375 is arc-shaped to apply pressure to fix the retaining ring section 13 of the wafer section 10 along the circumferential direction.

[0141] The pressure clamping part 375 includes: a clamping rotation part 375a, which is hinged to the clamping support part 374 and connected to the clamping linkage part 373; and a pressure-applying finger part 375b formed in the clamping rotation part 375a to apply pressure and release pressure to the retaining ring part 13 of the wafer part 10. When the first chuck linkage part 360 moves linearly, the clamping gear part 372 meshes with the first linkage gear part 363 to rotate, and the clamping rotation part 375a rotates in the clamping support part 374. As the clamping rotation part 375a rotates, the pressure-applying finger part 375b applies pressure and releases pressure to the retaining ring part 13 of the wafer part 10.

[0142] Multiple second chuck linkage portions 380 are radially connected to the chuck base 351 and move when the chuck base 351 rotates. Multiple cover limiting portions 390 are connected to the second chuck linkage portions 380 to fix the annular cover portion 201 to the rotating chuck portion 320 when the second chuck linkage portions 380 move. As the chuck rotating portion 355 is driven, the base gear portion 354 rotates, and as the base body portion 352 rotates together with the base gear portion 354, the second chuck linkage portions 380 move in the radial direction of the base body portion 352. In this case, when the base body portion 352 of the chuck base 351 rotates, the multiple first chuck linkage portions 360 and the multiple second chuck linkage portions 380 move simultaneously. As the first chuck linkage 360 ​​moves, the retaining ring 13 of the wafer portion 10 is fixed to the vacuum chuck portion 330, and as the second chuck linkage 380 moves, the annular cover 201 is fixed to the rotary chuck portion 320. Therefore, by using a chuck base 351 and a chuck rotation portion 355 to simultaneously fix the wafer portion 10 and the annular cover 201 to the vacuum chuck portion 330 and the rotary chuck portion 320, the structure of the chuck stage assembly 300 can be simplified.

[0143] The second chuck linkage 380 includes a second guide slider 381 and a second linkage component 382.

[0144] The second guide slider 381 is movably coupled to the guide portion 353. The second connecting rod member 382 is connected to the second guide slider 381 and moves linearly along the radial direction of the base body portion 352 when the second guide slider 381 moves. The second connecting rod gear portion 392 is formed on the second connecting rod member 382 in a manner that engages with the cover limiting portion 390 and moves accordingly. The second connecting rod member 382 is in the shape of a straight rod. The second connecting rod gear portion 392 is in the shape of a rack parallel to the length direction of the second connecting rod member 382.

[0145] The second chuck linkage portion 380 also includes a second guide block 384 connected to the second linkage member 382 in a linearly movable manner. The second guide block 384 prevents the second chuck linkage portion 380 from rotating in the circumferential direction of the base body portion 352 when the base body portion 352 rotates. Therefore, if the base body portion 352 rotates and the second guide slider 381 moves along the guide portion 353, the second linkage member 382 can move linearly without rotating.

[0146] The cover limiting part 390 is connected to the second chuck connecting part 380 so that when the second chuck connecting part 380 moves, the limiting step part (not shown) of the annular cover part 201 is fixed to the rotating chuck part 320.

[0147] As described above, the chuck stage assembly 300 includes: a wafer limiting section 370 for limiting the retaining ring 13 of the wafer section 10; a cover limiting section 390 for limiting the annular cover 201; and a moving module 325 for moving the vacuum chuck section 330 by pulling the wafer section 10 in the radial direction. Therefore, a wafer expanding process can be performed, wherein the wafer limiting section 370 processes the wafer section 10 while the vacuum chuck section 330 limits the retaining ring 13 of the wafer section 10, thereby moving the vacuum chuck section 330 to expand the spacing between the dies 11 of the wafer section 10. Furthermore, a debonding cleaning process can be performed, wherein the cover limiting section 390 processes the wafer section 10 while the annular cover 201 is restricted to the upper side of the vacuum chuck section 330.

[0148] Figure 21 To briefly illustrate a top view of the processing liquid spraying device of a substrate processing apparatus according to an embodiment of the present invention, Figure 22 To provide a simplified perspective view of the spray arm module in the processing liquid spraying device of a substrate processing apparatus according to an embodiment of the present invention, Figure 23 To briefly show an enlarged view of the first spray nozzle portion of the spray arm module in the processing liquid spraying device of a substrate processing apparatus according to an embodiment of the present invention, Figure 24An enlarged view is shown for the purpose of briefly illustrating the second jet nozzle portion and the second suction nozzle portion of the jet suction arm module in the processing liquid jetting device of the substrate processing apparatus according to an embodiment of the present invention.

[0149] Reference Figures 21 to 24 The treatment fluid injection device 400 is located outside the chuck table device 300. The treatment fluid injection device 400 includes an arm drive unit 402, an injection arm module 410, and an injection suction arm module 420.

[0150] The spray arm module 410 is connected to the arm drive unit 402. The spray arm module 410 moves vertically toward the chuck table device 300 via the arm drive unit 402, and is configured to rotate from the outside to the inside of the chuck table device 300.

[0151] The spray arm module 410 includes a first spray arm portion 411 and a first spray nozzle portion 413. The first spray arm portion 411 is disposed on the upper side approximately halfway along the diameter of the wafer portion 10. The first spray nozzle portion includes one or more first spray nozzles 414, 415 connected to multiple processing liquid supply pipes (not shown). The first spray nozzles 414, 415 can spray multiple cleaning liquids, such as chemicals, to chemically process the wafer portion 10.

[0152] The number of the first spray nozzles 414 and 415 can be varied in various ways depending on the method of the processing liquid spraying device 400 or the processing method of the wafer section 10. The processing method of the wafer section 10 includes etching or cleaning of the wafer section 10, etc.

[0153] The jet suction arm module 420 is connected to the arm drive unit 402. The jet suction arm module 420 moves vertically toward the chuck table device 300 via the arm drive unit 402, and is configured to rotate from the outside to the inside of the chuck table device 300.

[0154] The jet suction module 420 includes a second jet arm 421, a second jet nozzle 423, and a second suction nozzle 426. The second jet arm 421 is disposed on the upper side approximately halfway along the diameter of the wafer portion 10. The second jet nozzle 423 includes a second jet nozzle 424 and a third jet nozzle 425. The second suction nozzle 426 is immersed in the processing liquid to draw in the processing liquid and precipitates contained in the chuck stage assembly 300. Furthermore, the second jet nozzle 423 is positioned at a fixed height away from the processing liquid to jet the processing liquid onto the wafer portion 10 placed in the chuck stage assembly 300. The second jet nozzle 424 jets a cleaning solution mixed with deionized water and nitrogen onto the wafer portion 10. The third jet nozzle 425 jets a processing liquid such as thinner onto the wafer portion 10. When the wafer portion 10 is processed by jetting processing liquid from either the second jet nozzle 424 or the third jet nozzle 425, the second suction nozzle 426 draws in precipitates floating in the processing liquid.

[0155] Figure 25 The diagram illustrates, for brevity, the suction tank portion connected to the second suction nozzle portion of the jet suction arm module in the processing liquid jetting device of a substrate processing apparatus according to an embodiment of the present invention.

[0156] Reference Figure 25 The sediment drawn in through the second suction nozzle section 426 of the jet suction module 420 is discharged to the suction tank section 440 through the flow line section 430.

[0157] The flow line section 430 is connected to the second suction nozzle section 426 to allow the sediment and treatment fluid to flow. If suction pressure is generated in the flow line section 430, the second suction nozzle section 426 draws in the sediment floating on the upper side of the treatment fluid. The sediment and treatment fluid drawn in by the second suction nozzle section 426 flow in the flow line section 430.

[0158] The suction tank 440 is connected to the flow line 430 to allow sediment and treatment fluid to flow into the suction tank 440. A negative pressure lower than atmospheric pressure is formed inside the suction tank 440 to draw in sediment and treatment fluid.

[0159] An injector section 450 is provided in the flow line section 430 to create suction pressure in the second suction nozzle section 426 and the flow line section 430. Because the injector section 450 is provided in the flow line section 430, the second suction nozzle section 426 can be enlarged compared to a structure where the injector section 450 is provided in the second suction nozzle section 426. Furthermore, the size of the injector section 450 can be increased. Therefore, it is possible to prevent the second suction nozzle section 426 and the injector section 450 from being clogged by deposits.

[0160] After the wafer section 10 processing steps are completed, the ejector section 450 can be driven for a preset time. For example, after the wafer section 10 processing steps are completed, the ejector section 450 is driven for approximately 3 to 5 minutes. Therefore, the precipitates and processing liquid remaining in the second suction nozzle section 426 and the flow line section 430 are completely discharged into the suction tank section 440, thus preventing the processing liquid from falling from the second suction nozzle section 426 and re-contaminating the wafer section 10.

[0161] The injector section 450 includes an injector body section 451 and an air supply section 453. Sediment and treatment liquid drawn in by the flow line section 430 flow into the injector body section 451. The air supply section 453 is connected to the injector body section 451 to supply gas to it. Hydrogen gas, which is designed to prevent explosiveness or chemical combination with the treatment liquid, is disclosed as the gas. The supply of gas to the injector body section 451 by the air supply section 453 creates an intake pressure lower than atmospheric pressure inside the injector body section 451. Furthermore, the gas in the injector body section 451 flows into the intake tank section 440 and is then discharged, thus creating a negative pressure inside the intake tank section 440.

[0162] The inhalation tank 440 includes an inhalation tank body 441, a filter 444, and an exhaust 446.

[0163] The suction tank body 441 is connected to the flow pipeline 430. Processing liquid, precipitate, and gas flow into the suction tank body 441, which is in the flow pipeline 430. As the gas is discharged through the discharge pipeline 467, a negative pressure lower than atmospheric pressure is formed in the suction tank body 441. The bottom of the suction tank body 441 is inclined towards the center to collect the processing liquid.

[0164] A window 443 is provided on the upper side of the inhalation canister body 441 so that the inside of the inhalation canister can be observed from the outside. Therefore, the operator can observe the window 443 to check the internal condition of the inhalation canister body 441.

[0165] A filter section 444 is disposed inside the main body section 441 of the suction tank to filter the sediment discharged from the flow line section 430. The filter section 444 is supported by a support section 445.

[0166] The filtration section 444 includes multiple filters 444a stacked between the flow line section 430 and the discharge section 446, with the screen size of the multiple filters 444a decreasing towards the discharge section 446. Therefore, the upper filters 444a filter larger particles, while the lower filters 444a filter smaller particles. The multiple filters 444a are detachably disposed on the support section 445. Therefore, in the event of filter 444a clogging, the filters 444a are cleaned after being separated from the support section 445, and the cleaned filters 444a are then repositioned on the support section 445.

[0167] The discharge section 446 is connected to the main body 441 of the suction tank to discharge the treated liquid filtered by the filter section 444. The discharge section 446 is connected to the lowest part of the bottom surface 442 of the main body 441 of the suction tank. The discharge section 446 can be connected to a treated liquid recovery section (not shown) or a chuck table assembly 300. Because the discharge section 446 is connected to the lowest part of the bottom surface 442 of the suction tank main body 441, treated liquid residue can be prevented from remaining inside the suction tank main body 441.

[0168] The substrate processing apparatus 1 also includes an overflow line 461 connected to the intake tank body 441 and the discharge section 446. The overflow line 461 is connected to the upper side of the filter section 444 in the intake tank 440. When the filter section 444 is clogged with sediment, the processing liquid may overflow to the upper side of the intake tank body 441. In this case, the overflowing processing liquid is discharged to the discharge section 446 through the overflow line 461.

[0169] The substrate processing apparatus 1 also includes an overflow detection unit 463 for detecting the flow of processing fluid from the suction tank body 441 into the overflow line 461. The overflow detection unit 463 can be a level sensor for detecting the level of the processing fluid. If overflow of processing fluid is detected in the overflow detection unit 463, the overflow detection unit 463 transmits a signal to the control unit 470. The control unit 470 controls the alarm unit 465 to generate an alarm sound and interrupts the supply of processing fluid from the second injection nozzle 423. The operator replaces or cleans the filter unit 444 after opening the suction tank body 441.

[0170] The substrate processing apparatus 1 also includes a discharge line 467 connected to the suction tank 440 to discharge processing liquid fume and gas inside the suction tank 440. The discharge line 467 can be connected to a recovery device (not shown). As the processing liquid evaporates, processing liquid fume is generated, and the processing liquid fume and gas are discharged through the discharge line 467, thus creating a negative pressure inside the suction tank 440. Therefore, the processing liquid, precipitate, and gas in the flow line 430 are drawn into the interior of the suction tank 440.

[0171] The substrate processing method of the substrate processing apparatus according to an embodiment of the present invention described above will be explained.

[0172] Figure 26 For the purpose of briefly illustrating a substrate processing method according to an embodiment of the present invention, Figure 27 The flowchart below briefly illustrates a substrate processing method according to an embodiment of the present invention.

[0173] Reference Figure 26 and Figure 27 The wafer section 10 is placed on the chuck stages 320 and 330 (step S11) (refer to...) Figure 26 (a) In this case, the transfer device 100 holds the wafer portion 10 transferred by the second transfer module 60 and places the wafer portion 10 on the chuck stage 320, 330 as the transfer device 100 descends.

[0174] As the lifting unit 120 is driven, the transmission unit 130 rises, and the clamping unit 140 is drawn out from the transmission unit 130. In this case, the first rack unit 145 is fixed to the outer cover unit 131 of the transmission unit 130, and the second rack unit 146 moves by the translation and rotation of the pinion unit 142. If the clamping drive unit 141 is driven, the pinion unit 142 simultaneously performs translational and rotational movements along the first rack unit 145. Therefore, the second rack unit 146 moves twice the distance due to the translational distance and rotational movement of the pinion unit 142. If the second transfer module 60 transfers the wafer unit 10 to the finger-shaped part 147 of the clamping unit 140, the finger-shaped part 147 vacuum-adsorbs the wafer unit 10 by vacuum suction force.

[0175] Next, as the lifting unit 120 is driven, the transmission unit 130 descends, and the wafer portion 10 supported on the finger portion 147 is placed in the vacuum chuck portion 330 of the chuck stage 320, 330. As a vacuum is formed in the vacuum chuck portion 330, the wafer portion 10 is vacuum-adsorbed in the vacuum chuck portion 330.

[0176] The wafer section 10 is loaded onto the chuck stages 320 and 330 (step S12). In this case, as the chuck module 350 of the chuck stages 320 and 330 is driven, the wafer limiting part 370 restricts the retaining ring part 13 of the wafer section 10. As the moving module 325 moves (rises) the vacuum chuck part 330 of the chuck stages 320 and 330, the wafer section 10 is pulled in the radial direction to increase the spacing G2 between the dies 11 of the wafer section 10.

[0177] Driven by the chuck rotation section 355, the base gear section 354 rotates to one side. As the base body section 352 rotates to one side along with the base gear section 354, the first chuck linkage section 360 and the second chuck linkage section 380 move in the radial direction of the base body section 352. In this case, when the base body section 352 of the chuck base 351 rotates, multiple first chuck linkage sections 360 and multiple second chuck linkage sections 380 move simultaneously. As the first chuck linkage section 360 moves, the retaining ring section 13 of the wafer section 10 is restrained in the vacuum chuck section 330 by the pressure clamp 375 of the wafer restraint section 370.

[0178] In response, if a moving medium such as gas is supplied to the medium flow path section 326 of the moving module 325, the moving rod section 327 will rise due to the increased pressure of the moving medium, causing the vacuum chuck section 330 to rise. As the vacuum chuck section rises, the bonding sheet 12 of the wafer section 10 is pulled in the radial direction. As the bonding sheet 12 is stretched in the radial direction, the spacing G2 between the plurality of dies 11 is increased.

[0179] The spray arm module 410 sprays the first processing liquid onto the wafer section 10 to process the wafer section 10 (step S13) (see reference). Figure 26 (part (b)). In this case, the spray arm module 410 moves upward toward the wafer portion 10, swings within a predetermined angle range, and sprays the first processing liquid onto the wafer portion 10. The wafer portion 10 is processed by spraying the first processing liquid onto it. The first processing liquid is deionized water (DI water).

[0180] The spray arm module 410 sprays a second cleaning solution onto the wafer section 10 to process the wafer section 10 (step S14) (see reference). Figure 26 (part (c)). In this case, the spray arm module 410 swings within a predetermined angle range and sprays the second cleaning fluid onto the wafer section 10. Furthermore, the chuck stages 320 and 330 rotate the wafer section 10. The second cleaning fluid is a mixture of deionized water and nitrogen (N2).

[0181] If cleaning based on the second cleaning fluid is completed, the supply of the second cleaning fluid to the spray arm module 410 is interrupted.

[0182] Dry wafer section 10 in chuck stages 320 and 330 (step S15) (see reference) Figure 26 (d) In this case, the spray arm module 410 moves outward from the chuck stages 320 and 330, which rotate and dry the wafer portion 10. As the chuck stages 320 and 330 rotate, the second cleaning fluid adhering to the wafer portion 10 flows radially and is discharged by centrifugal force. Therefore, the drying time of the wafer portion 10 can be significantly reduced.

[0183] Unload wafer section 10 from chuck stages 320 and 330 (step S16). In this case, as the moving module 325 returns (descends) the vacuum chuck section 330 of chuck stages 320 and 330 to its original position, wafer section 10 returns to its original state, and as the chuck module 350 of chuck stages 320 and 330 is driven, wafer restraint section 370 releases the restraint on the retaining ring section 13 of wafer section 10.

[0184] The steps for unloading the wafer section 10 from the chuck stages 320 and 330 are described in detail below. If a moving medium such as gas is discharged from the medium flow path 326 of the moving module 325, the moving rod 327 descends due to the pressure release of the moving medium, causing the vacuum chuck section 330 to descend. As the vacuum chuck section 330 descends, the bonding sheet 12 of the wafer section 10 shrinks back to its original state. As the bonding sheet 12 shrinks back to its original state, the spacing G2 between the multiple dies 11 narrows back to its original state. Next, driven by the chuck rotation unit 355, the base gear unit 354 rotates to the other side. As the base body unit 352 rotates to the other side together with the base gear unit 354, the first chuck linkage unit 360 and the second chuck linkage unit 380 move in the radial direction of the base body unit 352. In this case, when the base body unit 352 of the chuck base 351 rotates, the multiple first chuck linkage units 360 and the multiple second chuck linkage units 380 move simultaneously. As the first chuck linkage 360 ​​moves, the pressure clamp 375 of the wafer restriction section 370 releases the restriction on the retaining ring 13 of the wafer section 10.

[0185] If the wafer restriction section 370 is removed from the wafer section 10, the ejection module (not shown) picks up the wafer section 10 and moves it to the outside of the chuck stage 320, 330.

[0186] As described above, the jet arm module 410 and the jet suction arm module 420 process the wafer section 10, thus allowing the wafer section 10 to be processed using various types of processing liquids or cleaning liquids. Therefore, the processing steps of the wafer section 10 can be implemented in various ways depending on the type of processing liquid or cleaning liquid.

[0187] Although the invention has been described with reference to the embodiments shown in the accompanying drawings, these are merely illustrative, and those skilled in the art will understand that various modifications and other equivalent embodiments may be implemented.

[0188] Therefore, the true scope of protection of this invention is defined by the claims.

Claims

1. A substrate processing method, characterized in that, The steps include the following: Place the wafer section on the chuck stage; The wafer section is loaded onto the chuck stage; The spray arm module sprays a first processing liquid onto the wafer portion to process the wafer portion; The spray arm module sprays a second processing liquid onto the wafer portion to process the wafer portion; The wafer section is dried on the chuck stage; and The wafer section is unloaded from the chuck stage. The step of placing the wafer portion on the chuck stage includes the following steps: The transfer device holds the wafer portion transferred from the second transfer module. The transfer device includes a lifting section, a transfer section, and a clamping section. The clamping section includes finger-like portions that hold the wafer portion by vacuum adsorption. The step of loading the wafer portion onto the chuck stage includes the following steps: As the chuck module of the chuck stage is driven, the wafer limiting part restricts the retaining ring of the wafer portion, wherein the chuck module includes a chuck base, a chuck rotating part, and the wafer limiting part; and As the moving module moves the vacuum chuck section of the chuck stage, it pulls the wafer section radially to increase the spacing between the multiple dies in the wafer section. The step of unloading the wafer portion from the chuck stage includes the following steps: As the moving module returns the vacuum chuck section of the chuck stage to its original position, the wafer section returns to its original state; and As the chuck module of the chuck stage is driven, the wafer limiting part releases the restriction on the retaining ring part of the wafer section.

2. The substrate processing method according to claim 1, characterized in that, The step of placing the wafer portion on the chuck stage further includes the following steps: As the transfer device descends, the wafer portion is placed on the chuck stage.

3. The substrate processing method according to claim 1, characterized in that, The step of processing the wafer by spraying a first processing liquid onto the wafer by the spray arm module includes the following steps: The jetting arm module moves upward toward the wafer portion; and The spray arm module swings within a predetermined angle range and sprays the first processing liquid onto the wafer.

4. The substrate processing method according to claim 3, characterized in that, The first treatment solution is deionized water.

5. The substrate processing method according to claim 1, characterized in that, In the step of processing the wafer by spraying a second processing liquid onto the wafer by the spray arm module, the spray arm module swings within a predetermined angle range and sprays the second processing liquid onto the wafer.

6. The substrate processing method according to claim 5, characterized in that, The second treatment solution is a mixture of deionized water and nitrogen.

7. The substrate processing method according to claim 1, characterized in that, The step of drying the wafer portion on the chuck stage includes the following steps: The injection arm module moves outward toward the chuck table; and As the chuck stage rotates, the wafer portion is dried.

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