Inertial sensors, electronic equipment

Abstract

The present application provides an inertial sensor and electronic device. The mechanical structure layer of the inertial sensor includes a stator and a mover, and a detection electrode is provided on the insulating substrate base. By driving the mover to move relative to the stator and detecting the change in the capacitance formed by the detection electrode and the mover, the motion state of the inertial sensor or electronic device can be determined. The insulating substrate base and the mechanical structure layer are sealed and connected to each other. The electrical connection of each component in the inertial sensor can be achieved while achieving a sealed connection and improving the vacuum degree. The solution provided by the present application is conducive to making the performance of the inertial sensor applied to electronic equipment better.

Description

Technical Field

[0001] The present application relates to the fields of inertial sensing and electronic devices, and more particularly, to inertial sensors and electronic devices. Background Art

[0002] Electronic devices can use inertial sensors (also known as inertial measurement units (IMUs)) to detect the acceleration, tilt angle and other motion states of electronic devices to identify shock, rotation, vibration and the like of electronic devices. Furthermore, electronic devices can implement functions such as navigation, orientation, screen rotation, and camera anti-shake. The performance of inertial sensors applied to electronic devices needs to be improved. For example, the detection accuracy of inertial sensors should be relatively high; for another example, the space occupied by inertial sensors in electronic devices can be as small as possible; for another example, inertial sensors should be conducive to wiring. Summary of the Invention

[0003] The present application provides an inertial sensor and an electronic device, with the purpose of improving the performance of the inertial sensor when applied to the electronic device.

[0004] In a first aspect, a substrate layer, a mechanical structure layer, and a cover layer are provided, wherein the mechanical structure layer is sealed between the substrate layer and the cover layer;

[0005] The substrate layer includes a substrate base, the substrate base is an insulator, the mechanical structure layer is sealed and connected to the substrate base to form a sealed connection portion between the mechanical structure layer and the substrate base, and the sealed connection portion is an insulator;

[0006] The substrate layer further includes a first electrical connector, the first electrical connector being attached to a side of the substrate body close to the mechanical structure layer, and the first electrical connector including an internal pin;

[0007] The first end face of the internal pin contacts the substrate base, the second end face of the internal pin contacts the mechanical structure layer, the side face of the internal pin is connected between the first end face and the second end face, the side face of the internal pin contacts the sealing connection part, and the internal pin is electrically connected to the mechanical structure layer.

[0008] Through the bonding process, the substrate base can be hermetically connected to the mechanical structure layer, generating internal stress in the portion formed by the sealed connection between the substrate base and the mechanical structure layer. This internal stress can act on the internal pins, causing the portion formed by the sealed connection between the substrate base and the mechanical structure layer to exert a compressive force on the internal pins. The compression force applied to the internal pins can improve the stability of signal transmission by the internal pins and reduce the impedance of the first electrical connector.

[0009] Because some materials can naturally emit volatilized gases, and the mechanical structure layer has relatively high vacuum requirements, establishing a direct, sealed connection between the substrate base and the mechanical structure layer helps reduce the possibility of volatilization of gases from inertial sensor components within the cavity formed by the substrate, mechanical structure, and cover layers, thereby helping to maintain the vacuum level of the cavity formed by the substrate, mechanical structure, and cover layers.

[0010] By providing a direct sealed connection between the substrate base and the mechanical structure layer, the substrate base and the mechanical structure layer can be relatively easily aligned, which is beneficial to reducing the processing accuracy required when connecting the substrate base and the mechanical structure layer.

[0011] By providing a direct sealed connection between the substrate base and the mechanical structure layer, it is beneficial to reduce the materials used in the inertial sensor and the processes required for processing these materials, thereby reducing the cost of manufacturing the inertial sensor.

[0012] In one embodiment, the mechanical structure layer includes a stator and a mover, the stator is fixed to the substrate layer, and the mover is capable of moving relative to the stator; the first electrical connector also includes a circuit and a detection electrode, the circuit is electrically connected between the internal pin and the detection electrode, and the detection electrode is arranged relative to the mover to form a capacitor; the inertial sensor also includes a chip, which is used to drive the mover to move relative to the stator through the internal pin, and obtain the change in capacitance of the capacitor formed by the mover and the detection electrode through the circuit and the detection electrode.

[0013] Since the detection electrode is arranged on the insulating substrate base and the detection electrode is arranged close to the mover, the detection electrode is relatively far away from the other conductor parts of the detection component, and it is not easy to form parasitic capacitance that affects the detection results, so that the results obtained by the chip can be more accurate, which is conducive to relatively more accurate acquisition of the motion state of the electronic device or inertial sensor.

[0014] In combination with the first aspect, in some implementations of the first aspect, the substrate base includes a base groove, and the first electrical connector is at least partially accommodated in the base groove.

[0015] Since the first electrical connector can be at least partially accommodated in the base groove, the space occupied by the first electrical connector in the detection component (especially the space occupied in the thickness direction) can be relatively small. The first electrical connector can be at least partially accommodated in the base groove, which is also convenient for increasing the thickness of the first electrical connector, which is beneficial for reducing the impedance of the first electrical connector, and further beneficial for improving the detection performance of the inertial sensor. Since the base groove can provide a receiving space for the first electrical connector, it is beneficial for flexibly designing the thickness, arrangement and other structural parameters of the first electrical connector, and it is convenient for the first electrical connector to have multiple conductive layers. Therefore, the base groove is provided on the substrate base, so that the circuit arrangement of the first electrical connector can be relatively sparse.

[0016] In combination with the first aspect, in certain implementations of the first aspect, the substrate layer further includes a circuit protection layer, which is arranged on a side of the substrate base close to the mechanical structure layer and is located in a cavity formed by the sealed connection between the mechanical structure layer and the substrate base, and the circuit protection layer wraps part of the periphery of the first electrical connector.

[0017] The circuit protection layer can be insulating. It helps reduce the possibility of circuit damage. The circuit protection layer can be located within a sealed or vacuum cavity formed by the substrate layer, mechanical structure layer, and cover layer, allowing for direct connection between the substrate layer and the mechanical structure layer.

[0018] In combination with the first aspect, in some implementations of the first aspect, the first electrical connector includes a first conductive layer and a second conductive layer, the first conductive layer includes a first portion of the circuit of the first electrical connector, and the second conductive layer includes a second portion of the circuit of the first electrical connector.

[0019] Multiple conductive layers facilitate line jumpers, allowing for flexible wiring. To improve or maintain the inertial sensor's capacitive detection performance, the spacing between lines should be minimal. Compared to a single-layer first electrical connector, a first electrical connector with multiple conductive layers can have a relatively sparse arrangement of lines, which in turn helps improve or maintain the inertial sensor's capacitive detection performance.

[0020] In conjunction with the first aspect, in certain implementations of the first aspect, the substrate layer further includes:

[0021] a second electrical connector, the second electrical connector being attached to a side of the substrate body away from the first electrical connector;

[0022] A via hole penetrates the substrate and is electrically connected between the first electrical connector and the second electrical connector. The chip is electrically connected to the first electrical connector through the second electrical connector and the via hole.

[0023] Through the conductive holes, the circuit located in the closed cavity formed by the substrate layer, mechanical structure layer, and cover layer can be led out of the closed cavity, thereby facilitating the electrical connection between the chip and the circuit on the substrate layer, and also helping to reduce the lateral space occupied by the inertial sensor.

[0024] In one embodiment, the first electrical connector further comprises a circuit and an internal pin, wherein the circuit is electrically connected between the internal pin and the detection electrode;

[0025] The second electrical connection member includes an external pin, and the external pin is electrically connected to the chip;

[0026] The via is electrically connected between the internal pin and the external pin.

[0027] Because chip ports are generally difficult to change, to make it easier for external pins to align with the chip ports, the first electrical connector can be used to arrange the circuits and adjust the positions of the external pins. Because the first electrical connector is located within the enclosed cavity formed by the substrate layer, mechanical structure layer, and cover layer, while the second electrical connector is located outside the enclosed cavity formed by the substrate layer, mechanical structure layer, and cover layer, arranging the circuits on the first electrical connector is preferred over arranging the second electrical connector, which helps reduce the possibility of damage to the circuits from external contaminants.

[0028] In combination with the first aspect, in certain implementations of the first aspect, the second electrical connector covers the through hole and is sealed to the substrate base.

[0029] In order to reduce the entry of external contaminants into the via hole, the second electrical connector can be sealed and attached to the substrate base, which is beneficial to maintaining the detection accuracy of the inertial sensor.

[0030] In combination with the first aspect, in certain implementations of the first aspect, the first electrical connector covers the through hole and is sealed to the substrate base.

[0031] To reduce external contaminants from entering the closed cavity formed by the substrate layer, mechanical structure layer, and cover layer through the conductive hole, the first electrical connector can be sealed and attached to the substrate base, which is beneficial to maintaining the detection accuracy of the inertial sensor.

[0032] In combination with the first aspect, in some implementations of the first aspect, the inertial sensor further includes a chip, and the chip is disposed on a side of the substrate layer away from the mechanical structure layer.

[0033] The chip is arranged on the substrate layer, which is beneficial to shortening the electrical connection path between the chip and the mechanical structure layer, thereby facilitating reducing the impedance of the inertial sensor.

[0034] In combination with the first aspect, in some implementations of the first aspect, the chip is disposed on a side of the cover layer away from the mechanical structure layer, and the cover layer includes:

[0035] A covering substrate, which is a conductor and is sealed to the mechanical structure layer, and includes a first part and a second part;

[0036] an insulating member, wherein the insulating member passes through the covering substrate, and the first portion of the covering substrate and the second portion of the covering substrate are located on both sides of the insulating member;

[0037] A third electrical connector is attached to a side of the cover substrate close to the chip, the third electrical connector is electrically connected to the first portion of the mechanical structure layer through the first portion of the cover substrate, and the third electrical connector is electrically connected to the internal pin through the second portion (a) of the cover substrate and the second portion of the mechanical structure layer.

[0038] By providing an insulating member on the cover layer, the cover layer can be divided into multiple parts that are not short-circuited with each other, which is conducive to transmitting signals through the cover layer and improving the wiring flexibility of the inertial sensor.

[0039] In combination with the first aspect, in certain implementations of the first aspect, the first portion of the covering substrate and the mechanical structure layer are connected via a bonding connector, and the first portion of the covering substrate further includes an overflow groove, which is located between the bonding connector and the insulating member.

[0040] The bonding connector can preferentially flow into the overflow groove at high temperature, which helps reduce the possibility of the bonding connector flowing from the first part of the covering substrate to the second part of the covering substrate, thereby helping reduce the possibility of the first part and the second part of the covering substrate being conductive.

[0041] In combination with the first aspect, in some implementations of the first aspect, the inertial sensor further includes a chip, and the chip is disposed on a side of the cover layer away from the mechanical structure layer.

[0042] The chip can control the mechanical structure layer through the cover layer, which is beneficial to improving the electrical connection flexibility between the chip and the mechanical structure layer.

[0043] In combination with the first aspect, in certain implementations of the first aspect, the resistivity of the substrate base is greater than ohm.

[0044] The higher resistivity of the substrate is beneficial to reducing the parasitic capacitance formed by the inertial sensor through the substrate, thereby improving the detection accuracy of the inertial sensor.

[0045] In combination with the first aspect, in certain implementations of the first aspect, the material of the substrate base is glass, and the material of the mechanical structure layer is single crystal silicon or polycrystalline silicon.

[0046] The processing technology of silicon materials is relatively mature, and the performance of glass and silicon is relatively similar. For example, the thermal expansion coefficient can be relatively close, which is conducive to improving the mechanical stability of inertial sensors.

[0047] In a second aspect, an electronic device is provided, comprising the inertial sensor as described in any implementation of the first aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 This is a schematic structural diagram of an electronic device provided in an embodiment of the present application.

[0049] Figure 2A Schematic diagram of the structure of an inertial sensor provided in an embodiment of the present application.

[0050] Figure 2B is a schematic structural diagram of another inertial sensor provided in an embodiment of the present application.

[0051] Figure 3A Schematic diagram of the structure of an inertial sensor provided in an embodiment of the present application.

[0052] Figure 3B yes Figure 3A A view of the inertial sensors in Figure 1.

[0053] Figure 3C yes Figure 3A A schematic structural diagram of the first electrical connector in FIG.

[0054] Figure 3D yes Figure 3A A schematic diagram of the mechanical structure layer in .

[0055] Figure 4A is a schematic structural diagram of another inertial sensor provided in an embodiment of the present application.

[0056] Figure 4B yes Figure 4A A view of the inertial sensors in Figure 1.

[0057] Figure 4C yes Figure 4A A schematic structural diagram of the first electrical connector in FIG.

[0058] Figure 4D This is a schematic structural diagram of another inertial sensor provided in an embodiment of the present application.

[0059] Figure 5Ais a schematic structural diagram of another inertial sensor provided in an embodiment of the present application.

[0060] Figure 5B yes Figure 5A A schematic structural diagram of the first conductive layer in FIG.

[0061] Figure 5C yes Figure 5A A schematic structural diagram of the second conductive layer in FIG.

[0062] Figure 6A is a schematic structural diagram of another inertial sensor provided in an embodiment of the present application.

[0063] Figure 6B yes Figure 6A A schematic structural diagram of the third electrical connector in FIG.

[0064] Figure 6C yes Figure 6A A schematic structural diagram of the first electrical connector in FIG.

[0065] Figure 7A yes Figure 4A Schematic flow chart of the processing method of the inertial sensor.

[0066] Figure 7B yes Figure 4A Schematic flow chart of the processing method of the inertial sensor.

[0067] Figure 7C yes Figure 4A Schematic flow chart of the processing method of the inertial sensor.

[0068] Figure 7D yes Figure 4A Schematic flow chart of the processing method of the inertial sensor.

[0069] Figure 7E yes Figure 4A Schematic flow chart of the processing method of the inertial sensor. DETAILED DESCRIPTION

[0070] The technical solution in this application will be described below with reference to the accompanying drawings.

[0071] Figure 1 1 is a schematic structural diagram of an electronic device 100 provided in an embodiment of the present application. The electronic device 100 may be, for example, a terminal consumer product or a 3C electronic product (computer, communication, consumer electronic products), such as a mobile phone, a laptop, a tablet computer, an e-reader, a notebook computer, a digital camera, a wearable device, a headset, a watch, a stylus, or the like. Figure 1 The illustrated embodiment is described by taking the electronic device 100 as a mobile phone as an example.

[0072] Electronic device 100 may include a housing 11, a display screen 12, and a circuit board assembly 13. Specifically, housing 11 may include a frame and a back cover. The frame may be located between display screen 12 and the back cover. The frame may surround the periphery of display screen 12 and the periphery of the back cover. The cavity formed between display screen 12, the frame, and the back cover may be used to accommodate circuit board assembly 13. Circuit board assembly 13 may include a circuit board and an inertial sensor 20 disposed on the circuit board. The circuit board may be, for example, a main board or a sub-board.

[0073] Figure 2A and Figure 2B Two embodiments of the inertial sensor 20 are shown. Figure 2A In the embodiment shown, the inertial sensor 20 may be an acceleration sensor, or a gyroscope, or an acceleration sensor and a gyroscope may be integrated. Figure 2B In the embodiment shown, the inertial sensor 20 may integrate a gyroscope and an acceleration sensor. In the embodiment where the inertial sensor 20 integrates an acceleration sensor and a gyroscope, the inertial sensor 20 may be a sensor that can realize the functions of both an acceleration sensor and a gyroscope.

[0074] The gyroscope sensor can be used to determine the motion posture of the electronic device 100. In some embodiments, the angular velocity of the electronic device 100 around three axes (i.e., X, Y, and Z axes) can be determined by the gyroscope sensor. The gyroscope sensor can be used for anti-shake shooting. For example, when the shutter is pressed, the gyroscope sensor detects the angle of the electronic device 100 shaking, calculates the distance that the lens module needs to compensate based on the angle, and allows the lens to offset the shaking of the electronic device 100 through reverse movement to achieve anti-shake. The gyroscope sensor can also be used for navigation and somatosensory game scenes.

[0075] The accelerometer can detect the magnitude of the acceleration of the electronic device 100 in all directions (generally three axes). When the electronic device 100 is stationary, it can detect the magnitude and direction of gravity. It can also be used to identify the posture of the electronic device 100, for applications such as switching between landscape and portrait modes and pedometers.

[0076] like Figure 2A 、 Figure 2B As shown, the inertial sensor 20 may include a chip 21 and one or more detection components 22. Part or the entirety of the detection component 22 may also be referred to as a micro electro mechanical system (MEMS). The chip 21 may be electrically connected to the detection component 22. Figure 2AIn the embodiment shown, the inertial sensor 20 may include a single detection component 22. The chip 21 may obtain signals related to acceleration and / or angular velocity through the detection component 22. Figure 2B In the illustrated embodiment, the inertial sensor 20 may include two detection components 22. The chip 21 may obtain a signal related to acceleration through one detection component 22 and a signal related to angular velocity through the other detection component 22.

[0077] The following combination Figure 1 、 Figure 2A 、 Figure 2B , explaining the principle of obtaining the motion state of the electronic device 100 through the inertial sensor 20.

[0078] The detection component 22 may include a mover, a stator, and a detection electrode. The stator may be fixed in the electronic device 100. The mover may move relative to the stator. There is a gap between the stator and the mover so that the stator and the mover may form a capacitance. The capacitance formed by the stator and the mover may be used to drive the mover to move relative to the stator. A capacitance may be formed between the mover and the detection electrode. The capacitance formed by the mover and the detection electrode may be used to detect the motion state of the electronic device 100. In one embodiment, the mover and the stator may include, for example, a comb-tooth structure. The comb-tooth-shaped mover may be a movable comb-tooth. The comb-tooth-shaped stator may be a fixed comb-tooth.

[0079] The chip 21 can send an alternating current signal to the detection component 22 to drive the mover of the detection component 22 to vibrate relative to the stator at a preset frequency. The vibration will basically not change the distance between the detection electrode and the mover, and the capacitance of the capacitor formed by the detection electrode and the mover can remain basically unchanged. Therefore, when the electronic device 100 does not undergo any movement (including translation, rotation, etc.), the capacitance of the capacitor formed by the detection electrode and the mover remains basically unchanged accordingly. When the electronic device 100 moves, the movement of the electronic device 100 will cause the mover to bear additional force, which can change the distance between the detection electrode and the mover, thereby changing the capacitance of the capacitor formed by the detection electrode and the mover. The chip 21 can obtain a signal related to the motion state of the electronic device 100 by obtaining the change in the capacitance of the capacitor formed by the detection electrode and the mover.

[0080] The chip 21 and the detection component 22 can be electrically connected to the detection component 22 through multiple pins on the detection component 22. The chip 21 and the multiple pins can be electrically connected by wire bonding, spot welding, conductive adhesive, conductive material filling, etc. The chip 21 can drive the vibrator on the detection component 22 through some of the multiple pins. The chip 21 can also obtain the capacitance value of the capacitor formed by the stator and the mover through another part of the multiple pins.

[0081] The detection component 22 can be primarily made of a conductive material. If other disconnected conductive parts, other than those related to detecting the motion state, are placed too close together, parasitic capacitance may form, which may affect the accuracy of the capacitance detection result obtained by the chip 21 from the detection component 22.

[0082] Figure 3A 2 is a schematic structural diagram of an inertial sensor 20 provided in an embodiment of the present application. Figure 3A The inertial sensor 20 shown may correspond to Figure 1 The inertial sensor 20 is shown.

[0083] The inertial sensor 20 may include a chip 21 and a detection component 22. The detection component 22 may include a substrate layer 210, a mechanical structure layer 220, and a cover layer 230 that are stacked. The mechanical structure layer 220 may be located between the cover layer 230 and the substrate layer 210. The mechanical structure layer 220 may also be referred to as a MEMS layer. The mechanical structure layer 220 may be a key layer of the detection component 22. The mechanical structure layer 220 may be made of or mainly made of a conductive material. The mechanical structure layer 220 may include a stator 221 and a mover 222. Figure 3A In the embodiment shown, the chip 21 may be disposed on the cover layer 230 . In other embodiments, the chip 21 may also be disposed on the substrate layer 210 .

[0084] By bonding, the mechanical structure layer 220 can be fixed on the substrate layer 210, and the mechanical structure layer 220 and the substrate layer 210 can be sealed. By bonding, the cover layer 230 can be fixed on the mechanical structure layer 220, and the cover layer 230 and the mechanical structure layer 220 can be sealed. Thus, the components of the inertial sensor 20 for detecting the motion state of the electronic device 100 (such as Figure 3A The mover 222 , the detection electrode 241 , etc. shown in the figure can be accommodated in a closed cavity formed by the substrate layer 210 , the mechanical structure layer 220 and the cover layer 230 .

[0085] The substrate layer 210 may include a substrate base 211. The substrate base 211 may be made of an insulating material (e.g., glass). The substrate base 211 may be hermetically connected to the mechanical structure layer 220. The hermetically sealed connection portion 215 between the substrate base 211 and the mechanical structure layer 220 may be an insulator. In other words, signals from the mechanical structure layer 220 may not be conducted through the hermetically sealed connection portion 215.

[0086] In some embodiments, the resistivity of the substrate base 211 may be greater than 10 9Ohm. In other embodiments, the thermal expansion coefficient of the substrate base 211 can be relatively close to the thermal expansion coefficient of the mechanical structure layer 220. Since the bonding process generally requires heating, similar thermal expansion coefficients of the substrate base 211 and the mechanical structure layer 220 can help improve the stability of the bonding relationship between the substrate base 211 and the mechanical structure layer 220, reduce the possibility of cracks in the substrate layer 210 or the mechanical structure layer 220, and thus help improve the mechanical stability of the inertial sensor.

[0087] In one embodiment, the substrate base 211 can be made of glass, and the mechanical structure layer 220 can be made of single crystal silicon or polycrystalline silicon. Figure 3A As shown, through anodic bonding, the substrate base 211 and the mechanical structure layer 220 can be integrated to achieve a sealed connection between the substrate base 211 and the mechanical structure layer 220. The temperature used in anodic bonding can be relatively low, which is beneficial to reducing the internal stress of the substrate base 211 and the mechanical structure layer 220.

[0088] The substrate layer 210 may further include a first electrical connector 212 disposed on the substrate base 211 . The first electrical connector 212 may be attached to a side of the substrate base 211 that is close to the mechanical structure layer 220 .

[0089] For example, the first electrical connection member 212 may include a detection electrode 241 . The detection electrode 241 may be disposed opposite to the mover 222 of the mechanical structure layer 220 . The signal output by the detection electrode 241 may be transmitted to the chip 21 .

[0090] For another example, the first electrical connector 212 may further include an internal pin 242 and an external pin 243. The internal pin 242 may be connected to the stator 221 of the mechanical structure layer 220. The external pin 243 may be electrically connected to the chip 21. Figure 3A In the illustrated embodiment, the chip 21 may be electrically connected to the external pins 243 via electrical connection lines 245 .

[0091] The internal pin 242 can contact the sealed connection portion 215 formed by the substrate base 211 and the mechanical structure layer 220. The internal pin 242 may include a first end face and a second end face arranged parallel to the substrate layer 210. The first end face may contact the mechanical structure layer 220, and the second end face may contact the substrate layer 210, so that the internal pin 242 can be electrically connected to the mechanical structure layer 220. The internal pin 242 may also include a side face connected between the first end face and the second end face, and the side face may contact the sealed connection portion 215. Figure 3AIn the illustrated embodiment, the internal pin 242 may be enclosed by the sealing connection portion 215. In other embodiments, one side of the internal pin 242 may be enclosed by the sealing connection portion 215, and the other side may extend out of the sealing connection portion 215.

[0092] For another example, the first electrical connection member 212 may further include a circuit ( Figure 3A (Not shown) The circuit may be electrically connected between the detection electrode 241 and the internal pin 242, between the internal pin 242 and the external pin 243, or between the detection electrode 241 and the external pin 243.

[0093] In the case where the circuit passes through the sealed connection portion 215 formed by the substrate base 211 and the mechanical structure layer 220 , the sealed connection portion may be in contact with a side surface of the circuit.

[0094] In one embodiment, the chip 21 can output an electrical signal to the stator 221 of the mechanical structure layer 220 through the external pins 243 , circuits, and internal pins 242 of the first electrical connector 212 , so that the mover 222 of the mechanical structure layer 220 moves relative to the stator 221 .

[0095] In another embodiment, one port of the chip 21 can be electrically connected to the detection electrode 241 of the first electrical connector 212 through the external pin 243 and the circuit of the first electrical connector 212, and another port of the chip 21 can be electrically connected to the mover 222 of the mechanical structure layer 220 through the external pin 243, the circuit, and the internal pin 242 of the first electrical connector 212, so that the chip 21 can obtain the change in capacitance of the capacitor formed by the detection electrode 241 and the mover 222.

[0096] remove Figure 3A In addition to the detection electrodes 241 shown disposed on the substrate layer 210 , detection electrodes may also be disposed at other locations within the inertial sensor. For example, the detection electrodes may be disposed on the stator 221 of the mechanical structure layer 220 ; or, in another example, the detection electrodes may be disposed on a side of the cover layer 230 that is adjacent to the mechanical structure layer 220 .

[0097] Since the detection electrode 241 is arranged on the insulating substrate base 211 and the detection electrode 241 is arranged close to the mover 222, the detection electrode 241 is relatively far away from the other conductor parts of the detection component 22, and it is not easy to form a capacitance that affects the detection result, so that the capacitance change obtained by the chip 21 can be more accurate, which is conducive to relatively more accurate acquisition of the motion state of the electronic device or inertial sensor 20.

[0098] In some embodiments, the substrate layer 210 may further include a circuit protection layer. The circuit protection layer may be disposed on a side of the substrate base 211 adjacent to the mechanical structure layer 220. The circuit protection layer may be insulating. The circuit protection layer may wrap around at least a portion of the periphery of the circuit of the first electrical connector 212. For example, the circuit of the first electrical connector 212 may be attached between the circuit protection layer and the substrate base 211. The circuit protection layer may include a pin opening, and the internal pin 242 or the external pin 243 of the first electrical connector 212 may be received within the pin opening, with the circuit protection layer exposed, thereby facilitating electrical connection between the external pin 243 and the chip 21 or the internal pin 242 and the mechanical structure layer 220.

[0099] The bonding method of the mechanical structure layer 220 and the cover layer 230 may be, for example, anodic bonding, eutectic bonding, etc.

[0100] In one embodiment, the cover layer 230 and the mechanical structure layer 220 can be hermetically connected by eutectic bonding. Figure 3A As shown, bonding elements are pre-installed on both the cover layer 230 and the mechanical structure layer 220. By heating, the bonding elements on the cover layer 230 and the mechanical structure layer 220 can be integrated to form a bonding connection 231 between the cover layer 230 and the mechanical structure layer 220, thereby achieving a sealed connection between the cover layer 230 and the mechanical structure layer 220. The cover layer 230 and the mechanical structure layer 220 can be made of, for example, single crystal silicon.

[0101] In another embodiment, the cover layer 230 and the mechanical structure layer 220 can be integrated by anodic bonding to achieve a sealed connection between the cover layer 230 and the mechanical structure layer 220. The cover layer 230 can be made of, for example, single crystal silicon, and the mechanical structure layer 220 can be made of, for example, polycrystalline silicon.

[0102] In some embodiments, the cover layer 230 can be primarily made of an insulating material or a conductive material. For example, the cover layer 230 can be made of glass, single crystal silicon, or polycrystalline silicon. Using an insulating material such as glass to form the cover layer 230 helps reduce the possibility of capacitance between the cover layer 230 and the mover 222 of the mechanical structure layer 220 affecting the detection results. Using a conductive material such as single crystal silicon to form the conductive circuit of the inertial sensor 20 facilitates the use of the cover layer 230.

[0103] like Figure 3A As shown, the cover layer 230 may further include a groove, which may be disposed opposite the mover 222 of the mechanical structure layer 220. The groove may be recessed in a direction away from the mover 222. Providing the groove in the cover layer 230 helps reduce the possibility of capacitance between the cover layer 230 and the mover 222 affecting the detection results.

[0104] along Figure 3A When observing the inertial sensor 20 in the Z direction, we can get Figure 3B The schematic structure diagram shown. Figure 3A When observing the first electrical connection member 212 on the substrate base 211 in the Z direction, it can be seen that Figure 3C It should be understood that Figure 3B The inertial sensor 20 shown, Figure 3C The first electrical connector 212 shown is only one embodiment, and those skilled in the art can relatively easily deduce other possible structures based on the solution provided in this application. For example, the first electrical connector 212 can also include more or fewer components.

[0105] like Figure 3B As shown, the chip 21 may have a port 25a, a port 25b, and a port 25c. The first electrical connector 212 of the substrate layer 210 may include an external pin 243a, an external pin 243b, and an external pin 243c. The external pin 243a may be electrically connected to the port 25a via an electrical connection line 245a. The external pin 243b may be electrically connected to the port 25b via an electrical connection line 245b. The external pin 243c may be electrically connected to the port 25c via an electrical connection line 245c. In other embodiments, the ports of the chip 21 and the external pins 243 may also be electrically connected via solder balls, conductive fillers, conductive pastes, etc.

[0106] like Figure 3C As shown, the first electrical connector 212 of the substrate layer 210 may further include a circuit 244a, a circuit 244b, and a circuit 244c. The first electrical connector 212 of the substrate layer 210 may further include a detection electrode 241a, a detection electrode 241b, and an internal pin 242. The circuit 244a may be electrically connected between the detection electrode 241a and the external pin 243a. The circuit 244b may be electrically connected between the detection electrode 241b and the external pin 243b. The circuit 244c may be electrically connected between the internal pin 242 and the external pin 243c. The internal pin 242 may be electrically connected to the external pin 243c. Figure 3A The mechanical structure layer 220 is shown electrically connected. Figure 3A The detection electrode 241 a may be disposed opposite to one mover 222 of the mechanical structure layer 220 , and the detection electrode 241 b may be disposed opposite to the other mover 222 of the mechanical structure layer 220 .

[0107] like Figure 3B 、 Figure 3CAs shown, the chip 21 can obtain the capacitance change of the capacitance formed by the detection electrode 241a and the mover 222 of the mechanical structure layer 220 through the external pin 243a, the circuit 244a, and the detection electrode 241a, and through the external pin 243c, the circuit 244c, and the internal pin 242. The chip 21 can obtain the capacitance change of the capacitance formed by the detection electrode 241b and the mover 222 through the external pin 243b, the circuit 244b, and the detection electrode 241b, and through the external pin 243c, the circuit 244c, and the internal pin 242. The chip 21 can drive the mover 222 to move relative to the stator 221 of the mechanical structure layer 220 through the external pin 243c, the circuit 244c, and the internal pin 242.

[0108] along Figure 3A Observing the mechanical structure layer 220 in the Z direction, it can be seen that Figure 3D The schematic structure diagram is shown. Figure 3D A possible embodiment of the mechanical structure layer 220 is shown. The mechanical structure layer 220 provided in the embodiment of the present application may not be limited to Figure 3D The embodiment shown.

[0109] The mechanical structure layer 220 may include fixed comb teeth 2210 and movable comb teeth 2220. The fixed comb teeth 2210 may be Figure 3A The stator 221 shown; the movable comb teeth 2220 may belong to Figure 3A The movable comb teeth 2220 can be moved relative to the fixed comb teeth 2210. Figure 3A The movable comb teeth 2220 may be disposed opposite to the detection electrode 241 on the substrate layer 210 to form a capacitor between the movable comb teeth 2220 and the detection electrode 241. The capacitance of the capacitor formed by the movable comb teeth 2220 and the detection electrode 241 may indicate the motion state of the inertial sensor 20.

[0110] The fixed comb teeth 2210 and the movable comb teeth 2220 can be interlaced. The fixed comb teeth 2210 can include a plurality of first comb teeth 2211, and the movable comb teeth 2220 can include a plurality of second comb teeth 2221. The first comb teeth 2211 of the fixed comb teeth 2210 can extend into the tooth gap formed by the two second comb teeth 2221 of the movable comb teeth 2220. The second comb teeth 2221 of the movable comb teeth 2220 can extend into the tooth gap formed by the two first comb teeth 2211 of the fixed comb teeth 2210. In other words, there is a second comb tooth 2221 between two adjacent first comb teeth 2211, and there is a first comb tooth 2211 between two adjacent second comb teeth 2221. There is a gap between adjacent first comb teeth 2211 and second comb teeth 2221 to form a capacitor.

[0111] The mechanical structure layer 220 may further include a first anchor region 2212 and a second anchor region 2213. The first anchor region 2212 and the second anchor region 2213 may be Figure 3A The stator 221 is shown. The first anchor region 2212 and the second anchor region 2213 can be fixed integrally to the inertial sensor 20. The first anchor region 2212 and the second anchor region 2213 can connect the ends of the movable comb teeth 2220 and be electrically connected to the movable comb teeth 2220. The chip 21 can apply an AC signal to the first anchor region 2212 and the second anchor region 2213. Under the action of the AC signal, the movable comb teeth 2220 can move relative to the fixed comb teeth 2210. For example, the movable comb teeth 2220 can move toward the first anchor region 2212 and away from the second anchor region 2213. For another example, the movable comb teeth 2220 can move toward the second anchor region 2213 and away from the first anchor region 2212. The vibration direction of the movable comb teeth 2220 can include the direction from the first anchor region 2212 to the second anchor region 2213 and the direction from the second anchor region 2213 to the first anchor region 2212.

[0112] The mechanical structure layer 220 may further include a first expansion zone 2222 and a second expansion zone 2223. The first expansion zone 2222 and the second expansion zone 2223 may be Figure 3A The movable element 222 is shown. The first telescopic section 2222 can be connected between the first anchor section 2212 and the first end of the movable comb teeth 2220, and the second telescopic section 2223 can be connected between the second anchor section 2213 and the second end of the movable comb teeth 2220. When the movable comb teeth 2220 are close to the first anchor section 2212 and away from the second anchor section 2213, the first telescopic section 2222 can be compressed and the second telescopic section 2223 can be stretched. When the movable comb teeth 2220 are close to the second anchor section 2213 and away from the first anchor section 2212, the first telescopic section 2222 can be stretched and the second telescopic section 2223 can be compressed.

[0113] When the inertial sensor 20 is in motion, for example, the inertial sensor 20 is rotated or accelerated, the movable comb teeth 2220 may move in a direction perpendicular to the driving direction of the movable comb teeth 2220. For example, a portion of the movable comb teeth 2220 may move in a direction perpendicular to the driving direction of the movable comb teeth 2220. Figure 3D The paper direction is displaced. Figure 3A 、 Figure 3DThe spacing between the movable comb teeth 2220 and the detection electrode 241 can be varied to change the capacitance of the capacitor formed between the movable comb teeth 2220 and the detection electrode 241. For example, the center of the movable comb teeth 2220 can be fixed relative to the inertial sensor 20 as a whole via the first anchor region 2212 and the second anchor region 2213. The side of the movable comb teeth 2220 near the fixed comb teeth 2210 can be moved closer to or further away from the detection electrode 241. The first and second expansion regions 2222 and 2223 can be stretched or compressed accordingly.

[0114] exist Figures 3A to 3D In the embodiment shown, the covering layer 230 may not participate in the electrical connection between the chip 21 and the mechanical structure layer 220. In other possible embodiments, the covering layer 230 may also participate in the electrical connection between the chip 21 and the mechanical structure layer 220. For example, the covering layer 230 may include a covering substrate and an electrical connector. The covering substrate is made of an insulating material. The electrical connector may, for example, be arranged on a side of the covering substrate close to the mechanical structure layer 220 and electrically connected to the mechanical structure layer 220. The electrical connector may, for example, be a bonding connector. The electrical connector on the covering substrate may, for example, be an electrode, a circuit, a pin, etc. For relevant descriptions of the electrical connector of the covering layer 230, reference may be made to the relevant descriptions of the first electrical connector 212 of the substrate layer 210 in the embodiments provided in this application.

[0115] Figure 4A 2 is a schematic structural diagram of another inertial sensor 20 provided in an embodiment of the present application.

[0116] and Figure 3A The inertial sensor 20 shown is similar, Figure 4A The inertial sensor 20 shown may include a chip 21 and a detection component 22; the detection component 22 may include a stacked substrate layer 210, a mechanical structure layer 220, and a cover layer 230, wherein the mechanical structure layer 220 may be located between the substrate layer 210 and the cover layer 230; the substrate layer 210 may be sealed and connected to the mechanical structure layer 220, and the cover layer 230 may be sealed and connected to the mechanical structure layer 220 to form a closed cavity between the substrate layer 210 and the cover layer 230; the mechanical structure layer 220 may include a mover 222 and a stator 221, and the stator 221 can be fixed on the substrate layer 210, and the mover 222 can move relative to the stator 221 in the closed cavity between the substrate layer 210 and the covering layer 230; the substrate layer 210 may include an insulating substrate base 211, and a first electrical connector 212 arranged on the substrate base 211; the chip 21 can drive the mover 222 to vibrate at a high frequency relative to the stator 221 through the first electrical connector 212, and the chip 21 can also obtain the capacitance change of the capacitor formed by the detection electrode 241 and the mover 222 through the first electrical connector 212.

[0117] and Figure 3A The embodiment shown is different. Figure 4A In the illustrated embodiment, the chip 21 can be disposed on a side of the substrate layer 210 away from the mechanical structure layer 220. The substrate base 211 can include a first electrical connector 212 and a second electrical connector 213. The first electrical connector 212 and the second electrical connector 213 are attached to both sides of the substrate base 211. The first electrical connector 212 can be disposed on a side of the substrate base 211 close to the mechanical structure layer 220. The second electrical connector 213 can be disposed on a side of the substrate base 211 away from the mechanical structure layer 220. The substrate base 211 can also include a via 214, which can penetrate the substrate base 211 and electrically connect the first electrical connector 212 and the second electrical connector 213.

[0118] The specific implementation of the first electrical connector 212 can refer to Figure 3A A specific embodiment of the first electrical connector 212 is shown.

[0119] The second electrical connector 213 may include an external pin 243. For example, the external pin 243 may be connected to the via 214. The external pin 243 may be arranged opposite the via 214. The chip 21 can use the external pin 243, the via 214, and the first electrical connector 212 to drive the mover 222 to vibrate relative to the stator 221 and detect changes in the capacitance formed by the mover 222 and the detection electrode 241.

[0120] In some embodiments, the second electrical connector 213 may further include a circuit, which may be electrically connected, for example, between the via 214 and the external pin 243. In one embodiment, to protect the circuit, a circuit protection layer may be provided on the side of the substrate base 211 away from the mechanical structure layer 220. The circuit protection layer may be insulating. The circuit protection layer may wrap at least part of the periphery of the circuit. For example, the circuit may be attached between the circuit protection layer and the substrate base 211. The circuit protection layer may include a pin opening, and the external pin 243 may be accommodated in the pin opening, with the circuit protection layer exposed, so as to facilitate the electrical connection between the external pin 243 and the chip 21. To reduce the possibility of external contaminants entering the via 214, the circuit, the external pin 243, or a component in the circuit protection layer may cover the via, and the component may be sealed and connected to the substrate base 211.

[0121] along Figure 4A Observing the inertial sensor 20 in the opposite direction of the Z direction shown, it can be obtained Figure 4B Schematic structure diagram shown in FIG (wherein the second electrical connection member 213 and the through hole 214 on the substrate base 211 are shown by dotted lines). Figure 4AWhen observing the first electrical connection member 212 on the substrate base 211 in the Z direction, it can be seen that Figure 4C It should be understood that Figure 4B The inertial sensor 20, the second electrical connection 213, Figure 4C The first electrical connector 212 shown is only one embodiment, and those skilled in the art can relatively easily deduce other possible structures based on the solution provided in this application. For example, the first electrical connector 212 and the second electrical connector 213 can also include more or fewer components.

[0122] Assume that chip 21 may have port a, port b, and port c. Figure 4B As shown, the second electrical connector 213 of the substrate layer 210 may include an external pin 243a, an external pin 243b, and an external pin 243c. The external pin 243a may be electrically connected to port a. The external pin 243b may be electrically connected to port b. The external pin 243c may be electrically connected to port c. Figure 4B In the embodiment shown, the ports of the chip 21 and the external pins 243 can be electrically connected, for example, by solder balls. The ports of the chip 21 and the external pins 243 can also be electrically connected by electrical wires, conductive fillers, conductive adhesives, etc.

[0123] like Figure 4C As shown, the first electrical connector 212 of the substrate layer 210 may further include a circuit 244a and a circuit 244b. The first electrical connector 212 of the substrate layer 210 may further include a detection electrode 241a and a detection electrode 241b. The first electrical connector 212 of the substrate layer 210 may further include an internal pin 242a, an internal pin 242b, and an internal pin 242c. The circuit 244a may be electrically connected between the detection electrode 241a and the internal pin 242a. The circuit 244b may be electrically connected between the internal pin 242b and the internal pin 242c. The internal pin 242c may be electrically connected to the detection electrode 241a. Figure 3A The mechanical structure layer 220 is shown electrically connected. Figure 3A The detection electrode 241 a may be disposed opposite to one mover 222 of the mechanical structure layer 220 , and the detection electrode 241 b may be disposed opposite to the other mover 222 of the mechanical structure layer 220 .

[0124] like Figure 4B 、 Figure 4CAs shown, substrate layer 210 may further include vias 214a, 214b, and 214c. Via 214a may electrically connect internal pin 242a and external pin 243a. Via 214b may electrically connect internal pin 242b and external pin 243b. Via 214c may electrically connect detection electrode 241b and external pin 243c.

[0125] like Figure 4B 、 Figure 4C As shown, the chip 21 can obtain the capacitance change of the capacitance formed by the detection electrode 241a and the mover 222 of the mechanical structure layer 220 through the external pin 243a, the conductive hole 214a, the internal pin 242a, the circuit 244a, and the detection electrode 241a, and through the external pin 243b, the conductive hole 214b, the internal pin 242b, the circuit 244b, and the internal pin 242c. The chip 21 can obtain the capacitance change of the capacitance formed by the detection electrode 241b and the mover 222 through the external pin 243c, the conductive hole 214c, and the detection electrode 241b, and through the external pin 243b, the conductive hole 214b, the internal pin 242b, the circuit 244b, and the internal pin 242c. The chip 21 can drive the mover 222 to move relative to the stator 221 of the mechanical structure layer 220 through the external pins 243b, the conductive hole 214b, the internal pins 242b, the circuit 244b, and the internal pins 242c.

[0126] exist Figures 4A to 4C In the illustrated embodiment, the external pins 243 of the inertial sensor 20 can be arranged corresponding to the ports of the chip 21 via the circuits on the first electrical connector 212 and / or the second electrical connector 213. This facilitates the use of a relatively stable fixed connection method between the external pins 243 of the inertial sensor 20 and the ports of the chip 21, such as by solder balls, conductive fillers, or adhesive.

[0127] Figure 4D 2 is a schematic structural diagram of another inertial sensor 20 provided in an embodiment of the present application. Figures 4A to 4C The inertial sensor 20 shown is slightly different. The via 214a can be connected between the detection electrode 241a and the external pin 243a, the via 214b can be connected between the internal pin 242 and the external pin 243b, and the via 214c can be connected between the detection electrode 241b and the external pin 243c. In other words, if necessary, unnecessary wiring, internal pins, etc. can be omitted from the electrical connection between the first electrical connector 212 and the second electrical connector 213 to reduce the impedance of the inertial sensor.

[0128] exist Figures 4A to 4DIn the illustrated embodiment, the cover layer 230 may not participate in the electrical connection between the chip 21 and the mechanical structure layer 220. In other possible embodiments, the cover layer 230 may participate in the electrical connection between the chip 21 and the mechanical structure layer 220. For example, the cover layer 230 may include a cover substrate, an electrical connector 1, and an electrical connector 2. The cover substrate is made of an insulating material. The electrical connector 1 may be disposed on a side of the cover substrate that is close to the mechanical structure layer 220 and electrically connected to the mechanical structure layer 220. The electrical connector 2 may be disposed on a side of the cover substrate that is away from the mechanical structure layer 220. The cover layer 230 may also include a conductive via that penetrates the cover substrate. The conductive via that penetrates the cover substrate may electrically connect the electrical connector 1 and the electrical connector 2. The electrical connector 1 or the electrical connector 2 may include, for example, one or more of the following: electrodes, lines, pins, etc. For descriptions of the electrical connector 2 on the cover layer 230, reference may be made to the descriptions of the second electrical connector 213 on the substrate layer 210 in the embodiments provided herein. For the related description of the conductive holes of the cover layer 230 , reference may be made to the related description of the conductive holes 214 of the substrate layer 210 in the embodiments provided in this application.

[0129] Figure 5A 2 is a schematic structural diagram of another inertial sensor 20 provided in an embodiment of the present application.

[0130] and Figure 4A The inertial sensor 20 shown is similar, Figure 5AThe inertial sensor 20 shown may include a chip 21 and a detection component 22; the detection component 22 may include a stacked substrate layer 210, a mechanical structure layer 220, and a cover layer 230, wherein the mechanical structure layer 220 may be located between the substrate layer 210 and the cover layer 230; the substrate layer 210 may be sealedly connected to the mechanical structure layer 220, and the cover layer 230 may be sealedly connected to the mechanical structure layer 220 to form a closed cavity between the substrate layer 210 and the cover layer 230; the mechanical structure layer 220 may include a mover 222 and a stator 221, wherein the stator 221 may be fixed to the substrate layer 210, and the mover 222 may move relative to the stator 221 within the closed cavity between the substrate layer 210 and the cover layer 230; Layer 210 may include an insulating substrate base 211, and may also include a first electrical connector 212 and a second electrical connector 213 arranged on both sides of the substrate base 211, and may also include a conductive hole 214 electrically connected between the first electrical connector 212 and the second electrical connector 213; the chip 21 can be arranged on the side of the substrate layer 210 away from the mechanical structure layer 220, and the chip 21 can drive the mover 222 to vibrate at high frequency relative to the stator 221 through the second electrical connector 213, the conductive hole 214, and the first electrical connector 212; the chip 21 can also obtain the capacitance change of the capacitor formed by the detection electrode 241 and the mover 222 through the first electrical connector 212, the conductive hole 214, and the second electrical connector 213.

[0131] and Figure 4A The embodiment shown is different. Figure 5A In the illustrated embodiment, the first electrical connector 212 may include multiple stacked conductive layers. For example, the multiple conductive layers may include a first conductive layer 2461 and a second conductive layer 2462. The first conductive layer 2461 may include one or more of the following: detection electrodes, circuits, internal pins, and external pins; the second conductive layer 2462 may include circuits. The first conductive layer 2461 may be located on a side of the second conductive layer 2462 that is closer to the mechanical structure layer 220. The first conductive layer 2461 may include a first portion of the circuits of the first electrical connector 212, and the second conductive layer 2462 may include a second portion of the circuits of the first electrical connector 212.

[0132] In some embodiments, the substrate layer 210 may further include a circuit protection layer 247. The circuit protection layer 247 may be insulating. The circuit may be attached to the side of the substrate base 211 that is closest to the mechanical structure layer 220. The circuit protection layer 247 may wrap around at least a portion of the periphery of the first electrical connector 212. The side of the multiple conductive layers of the first electrical connector 212 closest to the mechanical structure layer 220 may have the circuit protection layer 247 exposed. The portion of the first electrical connector 212 that is exposed from the circuit protection layer 247 (e.g., a portion of the first conductive layer 2461) may be electrically connected to other components (e.g., the mechanical structure layer 220 or the chip 21). Alternatively, the portion of the first electrical connector 212 that is exposed from the circuit protection layer 247 may form a capacitor with the actuator 222. The unexposed portion of the first electrical connector 212 (e.g., the second conductive layer 2462) may be encapsulated within the circuit protection layer 247 to reduce the possibility of oxidation of the first electrical connector 212.

[0133] like Figure 5A As shown, the first conductive layer 2461 may be the conductive layer of the first electrical connector 212 closest to the mechanical structure layer 220. The circuit protection layer 247 may wrap around the end surface of the first conductive layer 2461 that is closest to the substrate base 211, as well as the side surfaces of the first conductive layer 2461. The end surface of the first conductive layer 2461 that is closest to the mechanical structure layer 220 may at least partially expose the circuit protection layer 247. Examples of the exposed portion of the circuit protection layer 247 may include the detection electrodes 241, external pins, or internal pins. The second conductive layer 2462 may be attached between the substrate base 211 and the circuit protection layer 247. The circuit protection layer 247 may cover and wrap around the second conductive layer 2462 to protect it.

[0134] In some embodiments, the substrate base 211 may include a first base recess 2111. The first electrical connector 212 may be partially or fully accommodated within the first base recess 2111. Because the first electrical connector 212 can be at least partially accommodated within the first base recess 2111, the space occupied by the first electrical connector 212 within the detection component 22 (particularly the space occupied in the thickness direction) can be relatively small. The fact that the first electrical connector 212 can be at least partially accommodated within the first base recess 2111 also facilitates increasing the thickness of the first electrical connector 212, which helps reduce the impedance of the first electrical connector 212 and, in turn, improves the detection performance of the inertial sensor 20. Because the first base recess 2111 provides space for accommodating the first electrical connector 212, it facilitates flexible design of the thickness, layout, and other structural parameters of the first electrical connector 212, facilitating the first electrical connector 212 having multiple conductive layers. Therefore, providing the first base recess 2111 on the substrate base 211 facilitates a relatively sparse wiring arrangement of the first electrical connector 212.

[0135] along Figure 5A Observing the first conductive layer 2461 of the first electrical connection member 212 in the Z direction, it can be seen that Figure 5B The schematic structure diagram shown. Figure 5A When observing the second conductive layer 2462 of the first electrical connection member 212 in the Z direction, it can be seen that Figure 5C The schematic structure diagram shown in FIG. Figures 5A to 5C In the illustrated embodiment, the first electrical connection member 212 may include two conductive layers, namely a first conductive layer 2461 and a second conductive layer 2462 . The first conductive layer 2461 may be the conductive layer closest to the mechanical structure layer 220 . Figure 5A The structures of the second electrical connector 213 and the through hole 214 shown can be referred to Figure 4B The embodiment shown. It should be understood that Figures 5B to 5C The first electrical connector 212 shown is only one embodiment, and those skilled in the art can relatively easily deduce other possible structures based on the solution provided in this application. For example, the first electrical connector 212 can also include more or fewer components.

[0136] Assume that chip 21 may have port a, port b, and port c. Second electrical connector 213 of substrate layer 210 may include external pin a, external pin b, and external pin c. External pin a may be electrically connected to port a. External pin b may be electrically connected to port b. External pin c may be electrically connected to port c. The ports of chip 21 and the external pins may be electrically connected, for example, via solder balls. The ports of chip 21 and the external pins may also be electrically connected via electrical wires, conductive fillers, conductive adhesives, and the like.

[0137] like Figure 5B 、 Figure 5C As shown, first electrical connector 212 may include circuit 244a, circuit 244b, internal pin 242a, internal pin 242b, internal pin 242c, internal pin 242d, internal pin 242e, detection electrode 241a, and detection electrode 241b. Substrate layer 210 may also include via a, via b, and via c. Via a may electrically connect internal pin 242c and external pin a. Via b may electrically connect internal pin 242e and external pin b. Via c may electrically connect detection electrode 241b and external pin c.

[0138] Detection electrode 241a may occupy first conductive layer 2461 and second conductive layer 2462. Circuit 244a and internal pin 242a may occupy first conductive layer 2461. Internal pin 242c may occupy second conductive layer 2462. Circuit 244a may be electrically connected between detection electrode 241a and internal pin 242a. Internal pin 242a may be disposed opposite internal pin 242c, and internal pin 242a may be electrically connected to internal pin 242c.

[0139] The internal pin 242b may occupy the first conductive layer 2461. Figure 5A Internal pin 242b can be electrically connected to mechanical structure layer 220. Circuit 244b, internal pin 242d, and internal pin 242e can occupy second conductive layer 2462. Circuit 244b can be electrically connected between internal pin 242d and internal pin 242e. Internal pin 242b can be disposed opposite internal pin 242d and electrically connected to internal pin 242d.

[0140] The detection electrode 241 b may occupy the first conductive layer 2461 and the second conductive layer 2462 .

[0141] The chip 21 can obtain the capacitance change of the capacitance formed by the detection electrode 241a and the mover 222 of the mechanical structure layer 220 through the external pin a, the conductive hole a, the internal pin 242c, the internal pin 242a, the circuit 244a, and the detection electrode 241a, and through the external pin b, the conductive hole b, the internal pin 242e, the circuit 244b, the internal pin 242d, and the internal pin 242b. The chip 21 can obtain the capacitance change of the capacitance formed by the detection electrode 241b and the mover 222 through the external pin c, the conductive hole c, and the detection electrode 241b, and through the external pin b, the conductive hole b, the internal pin 242e, the circuit 244b, the internal pin 242d, and the internal pin 242b. The chip 21 can drive the mover 222 to move relative to the stator 221 of the mechanical structure layer 220 through the external pin b, the conductive hole b, the internal pin 242e, the circuit 244b, the internal pin 242d, and the internal pin 242b.

[0142] Multiple conductive layers facilitate line jumpers, allowing for flexible wiring. To improve or maintain the capacitance detection performance of the inertial sensor 20, the spacing between lines should not be too small. Compared to a single-layer first electrical connector 212, a first electrical connector 212 with multiple conductive layers can have a relatively sparse arrangement of lines, which in turn helps improve or maintain the capacitance detection performance of the inertial sensor 20.

[0143] exist Figures 5A to 5CIn the illustrated embodiment, the covering layer 230 may not participate in the electrical connection between the chip 21 and the mechanical structure layer 220. In other possible embodiments, the covering layer 230 may also participate in the electrical connection between the chip 21 and the mechanical structure layer 220. For example, the covering layer 230 may include a covering substrate and an electrical connector. The covering substrate is made of an insulating material. The electrical connector may, for example, be arranged on a side of the covering substrate close to the mechanical structure layer 220 and electrically connected to the mechanical structure layer 220. The electrical connector may, for example, include multiple conductive layers. In some embodiments, the covering substrate may include a second substrate groove, and the electrical connector on the covering substrate may be at least partially accommodated in the second substrate groove. In other embodiments, the covering layer 230 may also include a circuit protection layer, and the circuit protection layer may wrap at least a portion of the outer periphery of the electrical connector. For relevant descriptions of the covering layer 230, reference may be made to other embodiments provided in this application and will not be repeated here.

[0144] Figure 6A 2 is a schematic structural diagram of another inertial sensor 20 provided in an embodiment of the present application.

[0145] and Figure 3A The inertial sensor 20 shown is similar, Figure 6A The inertial sensor 20 shown may include a chip 21 and a detection component 22; the detection component 22 may include a stacked substrate layer 210, a mechanical structure layer 220, and a cover layer 230, wherein the mechanical structure layer 220 may be located between the substrate layer 210 and the cover layer 230; the substrate layer 210 may be sealed to the mechanical structure layer 220, and the cover layer 230 may be sealed to the mechanical structure layer 220 to form a closed cavity between the substrate layer 210 and the cover layer 230; the mechanical structure layer 220 may include a mover 222 and a stator 221, and the stator 221 may be fixed to the substrate layer 210 The mover 222 can move relative to the stator 221 in the closed cavity between the substrate layer 210 and the covering layer 230; the substrate layer 210 may include an insulating substrate base 211, and a first electrical connector 212 arranged on the substrate base 211; the chip 21 can be arranged on the side of the covering layer 230 away from the mechanical structure layer 220; the chip 21 can drive the mover 222 to vibrate at a high frequency relative to the stator 221 through the first electrical connector 212, and the chip 21 can also obtain the capacitance change of the capacitance formed by the detection electrode 241 and the mover 222 through the first electrical connector 212.

[0146] and Figure 3A The embodiment shown is different. Figure 6A In the illustrated embodiment, the chip 21 can drive the mover 222 to vibrate at high frequency relative to the stator 221 through the covering layer 230 and the first electrical connector 212 , and / or obtain the capacitance change of the capacitor formed by the detection electrode 241 and the mover 222 .

[0147] The cover layer 230 may include a cover substrate 232. The cover substrate 232 may be made of a conductive material. For example, the cover substrate 232 and the mechanical structure layer 220 may be made of the same conductive material. In some embodiments, the coefficient of thermal expansion of the cover substrate 232 may be relatively close to that of the mechanical structure layer 220. The cover layer 230 and the mechanical structure layer 220 may be hermetically connected using bonding methods such as anodic bonding or eutectic bonding.

[0148] For example, Figure 6A As shown, both the cover substrate 232 and the mechanical structure layer 220 can be made of single crystal silicon. The cover substrate 232 and the mechanical structure layer 220 can be hermetically connected via eutectic bonding. A bonding connector 231 can be provided between the cover substrate 232 and the mechanical structure layer 220. The bonding connector 231 can be made of a conductive material. The cover substrate 232 and the mechanical structure layer 220 can be electrically connected via the bonding connector 231. The bonding connector 231 can be made of, for example, a metal material. The bonding connector 231 can be an internal pin on the cover substrate 232, used to electrically connect the cover substrate 232 and the mechanical structure layer 220.

[0149] The cover layer 230 may further include a third electrical connector 233 disposed on the cover base 232. The third electrical connector 233 may be attached to a side of the cover base 232 proximal to the chip 21. The third electrical connector 233 may include external pins electrically connected to the chip 21. The third electrical connector 233 may also include wiring and / or detection electrodes. The chip 21 may be electrically connected to the cover base 232 via the third electrical connector 233. Since the cover base 232 is electrically connected to the mechanical structure layer 220, electrical conduction between the chip 21 and the mechanical structure layer 220 is achieved.

[0150] For example, the third electrical connector 233 can transmit the electrical signal from the chip 21 to the mover 222 and part of the stator 221 of the mechanical structure layer 220, so that the mover 222 of the mechanical structure layer 220 moves relative to the stator 221. For another example, the signal from the detection electrode 241 can be transmitted to the chip 21 through the covering substrate 232 and the third electrical connector 233, so that the chip 21 can obtain a signal related to the motion state of the inertial sensor 20. Figure 6A In the illustrated embodiment, the detection electrode 241 may be disposed on a side of the substrate base 211 close to the mechanical structure layer 220. In other possible embodiments, the detection electrode 241 may be disposed on the stator 221 of the mechanical structure layer 220 or on a side of the cover layer 230 close to the mechanical structure layer 220.

[0151] The third electrical connector 233 may include a plurality of external pins 243. The plurality of external pins 243 may be electrically connected to corresponding portions of the cover substrate 232. In other words, any external pin 243 may be electrically connected to a corresponding portion of the cover substrate 232 while being disconnected from other portions of the cover substrate 232. To disconnect, or prevent electrical conduction, between the portions of the cover substrate 232, the mechanical structure layer 220 may further include an insulating member 234 separating the portions of the cover substrate 232. The insulating member 234 may be configured to extend through the cover substrate 232.

[0152] Assume that one external pin 243 of the third electrical connector 233 can be electrically connected to the first portion 2321 of the cover base 232 and disconnected from the second portion 2322 of the cover base 232. The first portion 2321 of the cover base 232 can be electrically connected to the mechanical structure layer 220, while the second portion 2322 of the cover base 232 can be disconnected from the mechanical structure layer 220. The insulating member 234 of the cover layer 230 can be located between the first portion 2321 of the cover base 232 and the second portion 2322 of the cover base 232 to separate the first portion 2321 of the cover base 232 and the second portion 2322 of the cover base 232, thereby preventing the first portion 2321 of the cover base 232 and the second portion 2322 of the cover base 232 from shorting or conducting.

[0153] The mechanical structure layer 220 and the cover layer 230 can be sealed together via a bonding member 231. The bonding member 231 can be formed by heating the bonding members on the mechanical structure layer 220 and the cover layer 230 at high temperatures. The bonding member 231 may flow relatively freely during processing. In one embodiment, the bonding member 231 may span the insulating member 234 and connect between the first portion 2321 and the second portion 2322 of the cover substrate 232. The first portion 2321 and the second portion 2322 of the cover substrate 232 may be located on both sides of the insulating member 234.

[0154] To prevent electrical conduction between the first portion 2321 and the second portion 2322 of the cover substrate 232 via the bonding connector 231, the cover substrate 232 may further include an overflow groove 235. The overflow groove 235 may be located between the insulating member 234 and the first portion 2321 of the cover substrate 232. At high temperatures, the bonding connector 231 may preferentially flow into the overflow groove 235, thereby reducing the likelihood of the bonding connector 231 flowing from the first portion 2321 of the cover substrate 232 to the second portion 2322 of the cover substrate 232, thereby reducing the likelihood of electrical conduction between the first portion 2321 and the second portion 2322 of the cover substrate 232.

[0155] In some embodiments, the cover layer 230 may further include a circuit protection layer 248. The circuit protection layer 248 may be disposed on a side of the cover base 232 that is adjacent to the chip 21. The circuit protection layer 248 may be insulating. The circuit protection layer 248 may wrap around at least a portion of the periphery of the third electrical connector 233. For example, the circuit of the third electrical connector 233 may be attached between the circuit protection layer 248 and the substrate base 211. The circuit protection layer 248 may include a pin opening, and the external pin 243 of the third electrical connector 233 may be received in the pin opening, with the circuit protection layer 248 exposed, to facilitate electrical connection between the pin and the chip 21 or between the pin and the mechanical structure layer 220.

[0156] along Figure 6A Observing the third electrical connector 233 in the Z direction, it can be seen that Figure 6B The schematic structure diagram shown. Figure 6A When observing the first electrical connector 212 in the Z direction, it can be seen that Figure 6C It should be understood that Figure 6B The third electrical connector 233 and Figure 6C The first electrical connector 212 shown is only one embodiment, and those skilled in the art can relatively easily deduce other possible structures based on the solution provided in this application. For example, the first electrical connector 212 and the third electrical connector 233 can also include more or fewer components.

[0157] Assume that chip 21 may have port 1, port 2, and port 3. The third electrical connector 233 of the mechanical structure layer 220 may include external pins 243a, 243b, and 243c. External pin 243a may be electrically connected to port 1. External pin 243b may be electrically connected to port 2. External pin 243c may be electrically connected to port 3. The electrical connection methods for the external pins 243 of the ports of chip 21 may include, for example, solder ball connection, electrical connection wire connection, conductive filler connection, conductive paste connection, etc.

[0158] The third electrical connector 233 may further include a circuit 244a, a circuit 244b, and a circuit 244c. The third connector may further include an internal pin 242a, an internal pin 242b, and an internal pin 242c. Circuit 244a may be electrically connected between the internal pin 242a and the external pin 243a. Circuit 244b may be electrically connected between the internal pin 242b and the external pin 243b. Circuit 244c may be electrically connected between the internal pin 242c and the external pin 243c. The internal pins 242b and 242c may be, for example, bonding connectors.

[0159] Combine Figure 6AThe covering base 232 may include a portion 2321, a portion 232a, and a portion 232b. The portions 2321, 232a, and 232b may be disconnected from each other by an insulating member 234 disposed within the covering base 232. The portion 2321 of the covering base 232 may be connected to the internal pin 242c. The portion 232a of the covering base 232 may be connected to the internal pin 242a. The portion 232b of the covering base 232 may be connected to the internal pin 242b.

[0160] The mechanical structure layer 220 may include a conductive portion a, a conductive portion 220, and a conductive portion c. The first electrical connector 212 may include an internal pin 242d and an internal pin 242e. The conductive portion a of the mechanical structure layer 220 may be electrically connected between the internal pin 242a and the internal pin 242e. The conductive portion b of the mechanical structure layer 220 may be electrically connected between the internal pin 242b and the internal pin 242d. The conductive portion c of the mechanical structure layer 220 may be electrically connected to the internal pin 242c.

[0161] The first electrical connector 212 may further include a detection electrode 241a, a detection electrode 241b, a line 244d, and a line 244e. The line 244d may be electrically connected between the internal pin 242d and the detection electrode 241a. The line 244e may be electrically connected between the internal pin 242e and the detection electrode 241b.

[0162] The chip 21 can obtain the capacitance change of the capacitance formed by the detection electrode 241a and the mover 222 of the mechanical structure layer 220 through the external pin b, the circuit 244b, the internal pin 242b, the portion 220b of the mechanical structure layer 220, the internal pin 242d, the circuit 244d, and the detection electrode 241a, and through the external pin c, the circuit 244c, the internal pin 242c, and the portion 220c of the mechanical structure layer 220. The chip 21 can obtain the capacitance change of the capacitance formed by the detection electrode 241b and the mover 222 of the mechanical structure layer 220 through the external pin a, the circuit 244a, the internal pin 242a, the portion 220a of the mechanical structure layer 220, the internal pin 242e, the circuit 244e, and the detection electrode 241b, and through the external pin c, the circuit 244c, the internal pin 242c, and the portion 220c of the mechanical structure layer 220. The chip 21 can drive the mover 222 to move relative to the stator 221 of the mechanical structure layer 220 through the external pins c, the circuit 244 c, the internal pins 242 c, and the portion 220 c of the mechanical structure layer 220 .

[0163] exist Figures 6A to 6CIn the illustrated embodiment, both the cover layer 230 and the substrate layer 210 may participate in the electrical connection between the chip 21 and the mechanical structure layer 220 , which is beneficial for improving the wiring flexibility within the inertial sensor.

[0164] In order to enable those skilled in the art to understand the processing technology of the inertial sensor 20 provided in the embodiment of the present application, the embodiment of the present application is described in detail. 7A to 7E The embodiment shown illustrates Figure 4D The processing technology of the inertial sensor 20 shown in FIG. The processing technology of other inertial sensors 20 provided in the embodiment of the present application can refer to FIG. Figure 7E The embodiment shown.

[0165] Figure 7A FIG. 1 shows a process flow chart of processing the substrate layer 210 of the inertial sensor 20 .

[0166] 701 , obtaining an insulating substrate base 211 .

[0167] 702 , a through hole is processed on the substrate base 211 , and a conductive material is placed in the through hole to form a conducting hole 214 penetrating the substrate base 211 .

[0168] Through holes may be fabricated on the substrate base 211 by, for example, a through glass via (TGV) process.

[0169] The conductive material may include, for example, metals such as copper, tungsten, silver, gold, aluminum, germanium, and lithium. Alternatively, the conductive material may include organic conductive materials. In one embodiment, the conductive material may be filled in the through-hole. In another embodiment, the conductive material may be attached to the inner wall of the through-hole.

[0170] 703 , a first electrical connector 212 is provided on one side of the substrate base 211 , and the first electrical connector 212 is attached to the through hole 214 of the substrate base 211 .

[0171] The first electrical connector 212 can be sealed to the substrate base 211 to prevent outside air from passing through the connection area between the first electrical connector 212 and the substrate base 211, thereby reducing the possibility of contamination within the inertial sensor 20. The first electrical connector 212 can include one or more conductive layers. The process for attaching the first electrical connector 212 to the substrate base 211 can include, but is not limited to, evaporation, sputtering, and lift-off processes.

[0172] In some embodiments, a first circuit protection layer may be formed on the side of the first electrical connector 212 away from the substrate base 211. The first circuit protection layer may include, but is not limited to, nitride. For example, the first circuit protection layer may be deposited on the substrate base 211 and a portion of the first electrical connector 212. Another portion of the first electrical connector 212 may be exposed from the first circuit protection layer. The portion of the first electrical connector 212 exposed from the first circuit protection layer may include a conductive coating. The conductive coating may include, but is not limited to, alloys such as gold and lithium. The conductive coating may help reduce the likelihood of oxidation of the unexposed portion of the first electrical connector 212.

[0173] Figure 7B FIG. 1 shows a process flow chart of a machining process of the mechanical structure layer 220 of the inertial sensor 20 .

[0174] 704 , obtaining a mechanical structure layer raw material 320 , the mechanical structure layer raw material 320 including a first raw material layer 321 , a second raw material layer 322 and a raw material connecting layer 233 , wherein the first raw material layer 321 and the second raw material layer 322 are connected via the raw material connecting layer 233 .

[0175] 704 can be regarded as a silicon-on-insulator (SOI) technology, for example.

[0176] The material of the connecting raw material layer 233 can be different from the materials of the first raw material layer 321 and the second raw material layer 322. In some embodiments, the etching efficiency (or removal efficiency) of the first raw material layer 321 and the second raw material layer 322 can be higher than the etching efficiency of the connecting raw material layer 233. For example, the first raw material layer 321 and the second raw material layer 322 can be primarily made of single crystal silicon or polycrystalline silicon, and the connecting raw material layer 233 can be primarily made of glass. The bonding method of the connecting raw material layer 233 and the first raw material layer 321 can be, for example, anodic bonding; similarly, the bonding method of the connecting raw material layer 233 and the second raw material layer 322 can be, for example, anodic bonding.

[0177] 705 , etching the first material layer 321 on a side of the first material layer 321 of the mechanical structure layer material 320 away from the second material layer 322 to form the mechanical structure layer 220 .

[0178] For example, the mechanical structure layer 220 may include a first connection end 223, a mover 222, and a stator 221. During a first etching process, a shallow groove is etched in the first raw material layer 321 to form the first connection end 223 of the mechanical structure layer 220. During a second etching process, a deep groove is etched in the first raw material layer 321 to form the mover 222 and stator 221 of the mechanical structure layer 220. The etching process may terminate after etching reaches the raw material connection layer 233.

[0179] Figure 7C FIG. 1 shows a process flow chart of assembling the mechanical structure layer 220 and the substrate layer 210 of the inertial sensor 20 .

[0180] 706 , bonding the mechanical structure layer 220 of the mechanical structure layer raw material 320 to the side of the substrate base 211 where the first electrical connector 212 is provided.

[0181] The side of the mechanical structure layer 220 away from the second material layer 322 can be bonded to the substrate base 211. The bonding method of the mechanical structure layer 220 and the substrate base 211 includes anodic bonding and the like.

[0182] 707 , a second electrical connector 213 is provided on a side of the substrate base 211 away from the first electrical connector 212 , and the second electrical connector 213 is attached to the through hole 214 of the substrate base 211 . The second electrical connector 213 may include an external pin 243 for electrically connecting to the chip 21 .

[0183] The second electrical connector 213 can be sealed to the substrate base 211 to prevent outside air from passing through the conductive hole 214, thereby reducing the possibility of contamination within the inertial sensor 20. The second electrical connector 213 can include one or more conductive layers. The second electrical connector 213 can be attached to the substrate base 211 by processes including, but not limited to, evaporation, sputtering, and lift-off processes.

[0184] In some embodiments, a second circuit protection layer may be formed on the side of the second electrical connector 213 away from the substrate base 211. The second circuit protection layer may include, but is not limited to, nitride. For example, the second circuit protection layer may be deposited on the substrate base 211 and a portion of the second electrical connector 213. Another portion of the second electrical connector 213 may be exposed from the second circuit protection layer. The portion of the second electrical connector 213 exposed from the second circuit protection layer may include a conductive coating. The conductive coating may include, but is not limited to, alloys such as gold and lithium. The conductive coating may help reduce the likelihood of oxidation of the unexposed portion of the second electrical connector 213.

[0185] 708 , removing the second material layer 322 and the material connection layer 233 of the mechanical structure layer material 320 .

[0186] For example, the second material layer 322 and the material connection layer 233 may be removed by one or more etching steps.

[0187] 707 , setting a first bonding component 261 on a side of the mechanical structure layer 220 away from the substrate layer 210 .

[0188] For example, the first bonding element 261 may be attached to the side of the mechanical structure layer 220 away from the substrate layer 210 by evaporation, sputtering, or a lift-off process. The first bonding element 261 may include metal, for example.

[0189] Figure 7D FIG. 1 shows a process flow chart of assembling the mechanical structure layer 220 and the substrate layer 210 of the inertial sensor 20 .

[0190] 710 , obtaining the cover layer raw material 330 .

[0191] The material type of the cover layer raw material 330 may be the same as the material type of the mechanical structure layer raw material 320 , for example.

[0192] 711 , etching the cover layer material 330 on one side of the cover layer material 330 to form a cover layer 230 .

[0193] For example, the cover layer 230 may include a second connection end portion 236 . The second connection end portion 236 of the cover layer 230 may be formed by etching a shallow groove in the cover layer raw material 330 .

[0194] 712 , a second bonding feature 262 is provided on the etched side of the cover layer 230 .

[0195] For example, the second bonding member 262 may be attached to the cover layer 230 by evaporation, sputtering, or a lift-off process. The second bonding member 262 may include, for example, metal. Figure 7C The material type of the illustrated first bonding element 261 may be the same as the material type of the second bonding element 262 , for example.

[0196] Figure 7E The figure shows a process flow chart of assembling the cover layer 230 , the mechanical structure layer 220 , the substrate layer 210 and the chip 21 of the inertial sensor 20 .

[0197] 713 , bonding the first bonding component 261 and the second bonding component 262 to form a bonding connection component 231 between the cover layer 230 and the mechanical structure layer 220 . The bonding connection component 231 is sealed between the cover layer 230 and the mechanical structure layer 220 .

[0198] The bonding method of the first bonding member 261 and the second bonding member 262 includes, but is not limited to, anodic bonding, eutectic bonding, etc. Because the mechanical structure layer 220 is sealed between the substrate layer 210 and the cover layer 230, the mover 222 of the mechanical structure layer 220 can move within a relatively sealed cavity, which helps reduce the entry of external contaminants into the cavity formed by the cover layer 230, the mechanical structure layer 220, and the substrate layer 210, thereby helping to maintain the detection accuracy of the inertial sensor 20.

[0199] 714 , a chip 21 is disposed on a side of the substrate layer 210 away from the mechanical structure layer 220 , and a port of the chip 21 is electrically connected to the second electrical connector 213 of the substrate layer 210 .

[0200] The electrical connection between the port of the chip 21 and the second electrical connection member 213 of the substrate layer 210 includes, but is not limited to, solder ball connection, conductive filler connection, conductive paste connection, and electrical connection line connection.

[0201] The embodiments of the present application provide an inertial sensor, an electronic device, and a method for processing an inertial sensor. By using an insulating substrate material, it is beneficial to reduce the possibility of the substrate layer itself forming a capacitor. By providing a via on the insulating substrate layer, it is convenient to improve the flexibility of the electrical connection between the chip and the detection component. For example, the chip and the detection component may not be electrically connected through or relatively rarely through an electrical connection line. The connection stability of the electrical connection line is relatively weak, and the space occupied in the electronic device is relatively high. Reducing the use of electrical connection lines in the inertial sensor is beneficial to improving the electrical connection stability between the chip and the detection component, and is also beneficial to reducing the space occupied by the inertial sensor in the electronic device.

[0202] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. An inertial sensor (20), characterized in that It comprises a substrate layer (210), a mechanical structure layer (220), and a covering layer (230) which are stacked, wherein the mechanical structure layer (220) is sealed and connected between the substrate layer (210) and the covering layer (230); The substrate layer (210) includes a substrate base (211), the substrate base (211) is an insulator, the mechanical structure layer (220) is sealed and connected to the substrate base (211) to form a sealed connection portion (215) between the mechanical structure layer (220) and the substrate base (211), and the sealed connection portion (215) is an insulator; The substrate layer (210) further includes a first electrical connector (212), the first electrical connector (212) being attached to a side of the substrate base (211) close to the mechanical structure layer (220), and the first electrical connector (212) including an internal pin (242); The first end face of the internal pin (242) contacts the substrate base (211), the second end face of the internal pin (242) contacts the mechanical structure layer (220), the side face of the internal pin (242) is connected between the first end face and the second end face, the side face of the internal pin (242) contacts the sealing connection portion (215), and the internal pin (242) is electrically connected to the mechanical structure layer (220).

2. The inertial sensor (20) according to claim 1, characterized in that The substrate base (211) comprises a base groove (2111), and the first electrical connection member (212) is at least partially accommodated in the base groove (2111).

3. The inertial sensor (20) according to claim 1 or 2, characterized in that The substrate layer (210) further comprises a circuit protection layer (247), the circuit protection layer (247) being arranged on a side of the substrate base (211) close to the mechanical structure layer (220) and located in a cavity formed by the sealed connection between the mechanical structure layer (220) and the substrate base (211), the circuit protection layer (247) wrapping a portion of the outer periphery of the first electrical connector (212).

4. The inertial sensor (20) according to claim 1 or 2, characterized in that The first electrical connector (212) includes a first conductive layer (2461) and a second conductive layer (2462), wherein the first conductive layer (2461) includes a first portion of the circuit of the first electrical connector (212), and the second conductive layer (2462) includes a second portion of the circuit of the first electrical connector (212).

5. The inertial sensor (20) according to claim 1 or 2, characterized in that The substrate layer (210) further comprises: a second electrical connector (213), the second electrical connector (213) being attached to a side of the substrate base (211) away from the first electrical connector (212); A conducting hole (214) passes through the substrate base (211) and is electrically connected between the first electrical connector (212) and the second electrical connector (213).

6. The inertial sensor (20) according to claim 5, characterized in that The second electrical connector (213) covers the through hole (214) and is sealed and connected to the substrate base (211).

7. The inertial sensor (20) according to claim 5, characterized in that The first electrical connector (212) covers the through hole (214) and is sealed and connected to the substrate base (211).

8. The inertial sensor (20) according to claim 5, characterized in that The inertial sensor (20) further includes a chip (21), wherein the chip (21) is arranged on a side of the substrate layer (210) away from the mechanical structure layer (220).

9. The inertial sensor (20) according to claim 1 or 2, characterized in that The chip (21) is arranged on a side of the cover layer (230) away from the mechanical structure layer (220), and the cover layer (230) includes: a covering substrate (232), the covering substrate (232) being a conductor, the covering substrate (232) being sealedly connected to the mechanical structure layer (220), and the covering substrate (232) comprising a first portion (2321) and a second portion (232a); an insulating member (234), the insulating member (234) passing through the covering substrate (232), the first portion (2321) of the covering substrate (232) and the second portion (232a) of the covering substrate (232) being located on both sides of the insulating member (234); A third electrical connector (233) is attached to a side of the covering substrate (232) close to the chip (21); the third electrical connector (233) is electrically connected to the first part of the mechanical structure layer (220) through the first part (2321) of the covering substrate (232); and the third electrical connector (233) is electrically connected to the internal pin (242) through the second part (232a) of the covering substrate (232) and the second part of the mechanical structure layer (220).

10. The inertial sensor (20) according to claim 9, characterized in that The first portion (2321) of the covering substrate (232) and the mechanical structure layer (220) are connected via a bonding connector (231), and the first portion (2321) of the covering substrate (232) further includes an overflow groove (235), and the overflow groove (235) is located between the bonding connector (231) and the insulating member (234).

11. The inertial sensor (20) according to claim 9, characterized in that The inertial sensor (20) further includes a chip (21), and the chip (21) is arranged on a side of the cover layer (230) away from the mechanical structure layer (220).

12. The inertial sensor (20) according to claim 1 or 2, characterized in that The resistivity of the substrate (211) is greater than 10 9 ohm.

13. The inertial sensor (20) according to claim 1 or 2, characterized in that The material of the substrate base (211) is glass, and the material of the mechanical structure layer (220) is single crystal silicon or polycrystalline silicon.

14. An electronic device (100), characterized in that Comprising an inertial sensor (20) as claimed in any one of claims 1 to 13.

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