A three-dimensional optoelectronic packaging structure and packaging method

Abstract

The present application provides a three-dimensional optoelectronic packaging structure and packaging method. In the present application, a first electrode and a second electrode are used to provide an electro-optical modulator with a longitudinal electric field that vertically passes through the electro-optical modulator, that is, a Z-cut electrode is provided for the electro-optical modulator. Compared with providing an X-cut electrode and a Y-cut electrode for the electro-optical modulator, the packaging space for the electro-optical modulator can be greatly reduced. In addition, the electro-optical modulator based on the Z-cut electrode is isotropic on a plane and can allow bending and folding, further reducing the space occupied by the three-dimensional optoelectronic packaging structure and improving the integration. The distance between the first electrode and the electro-optical modulator is relatively close, which can reduce light loss, improve photoelectric coupling, and improve modulation efficiency. In the present application, the electro-optical modulator and the electronic chip are electrically connected using the first electrode, and the interconnection distance between the electro-optical modulator and the electronic chip is relatively short, which can improve the interconnection bandwidth.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a three-dimensional optoelectronic packaging structure and a packaging method. Background Art

[0002] With the development of current semiconductor technology, semiconductor devices have become diverse and have been applied in various fields, such as electro-optical (EO) modulators in optical communications. EO modulators are one of the key functional components in optical communication systems. They can convert the driving electrical signal onto an optical carrier and transmit it in the optical domain.

[0003] However, current electro-optic modulators have a low integration level during packaging and cannot meet the needs of practical applications. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a three-dimensional optoelectronic packaging structure and packaging method, which can improve the integration and meet the needs of practical applications.

[0005] An embodiment of the present application provides a three-dimensional optoelectronic packaging structure, the three-dimensional optoelectronic packaging structure comprising:

[0006] A packaging substrate and an electric chip arranged on one side of the packaging substrate;

[0007] a first electrode, the first electrode being arranged on a side of the electronic chip away from the packaging substrate;

[0008] an electro-optical modulator, the electro-optical modulator being arranged on a side of the first electrode away from the packaging substrate, the electro-optical modulator and the electronic chip being electrically connected via the first electrode;

[0009] The second electrode is arranged on a side of the electro-optic modulator away from the packaging substrate; the first electrode and the second electrode are used to provide an electric field for the electro-optic modulator to perform electro-optic modulation.

[0010] Optionally, the electro-optic modulator includes a heterogeneous waveguide structure, which includes a lithium niobate film and a patterned structure on silicon, and the patterned structure on silicon is arranged on a surface of the lithium niobate film away from the packaging substrate.

[0011] Optionally, the electro-optic modulator includes a first buried oxide layer and a second buried oxide layer;

[0012] The first buried oxide layer is arranged between the first electrode and the lithium niobate film, and the second buried oxide layer is arranged between the on-silicon pattern structure and the second electrode.

[0013] Optionally, a portion between the second buried oxide layer and the lithium niobate film except the on-silicon graphic structure is resin glue.

[0014] Optionally, the three-dimensional optoelectronic packaging structure includes a conductive structure and a pin, and the conductive structure is used to connect the second electrode and the pin.

[0015] An embodiment of the present application provides a three-dimensional optoelectronic packaging method, the method comprising:

[0016] forming an electro-optic modulator;

[0017] forming a first electrode on one side of the electro-optical modulator;

[0018] An electrical chip is arranged on the first electrode; the electro-optical modulator and the electrical chip are electrically connected via the first electrode;

[0019] forming a second electrode on the other side of the electro-optical modulator;

[0020] The electronic chip and the electro-optical modulator are arranged on the packaging substrate with the electronic chip facing the packaging substrate.

[0021] Optionally, forming the electro-optic modulator includes:

[0022] Providing a silicon substrate on an insulating substrate; the silicon substrate on the insulating substrate comprises a bottom silicon substrate, a second buried oxide layer and a top silicon substrate stacked in sequence;

[0023] Etching the top silicon substrate to form a pattern structure on silicon;

[0024] Providing a first substrate, on which a first buried oxide layer and a lithium niobate thin film are formed;

[0025] The first substrate and the silicon substrate on the insulating substrate are bonded in a direction in which the lithium niobate film faces the pattern structure on silicon. The pattern structure on silicon and the lithium niobate film constitute the electro-optical modulator.

[0026] Optionally, bonding the first substrate and the silicon substrate on the insulating substrate in a direction in which the lithium niobate film faces the patterned structure on silicon includes:

[0027] The first substrate and the silicon substrate on the insulating substrate are bonded by resin glue, and the portion between the second buried oxide layer and the lithium niobate film except the graphic structure on the silicon is resin glue.

[0028] Optionally, before forming the first electrode on one side of the electro-optical modulator, the method further includes:

[0029] removing the first substrate;

[0030] Before forming the second electrode on the other side of the electro-optical modulator, the method further includes:

[0031] The underlying silicon substrate is removed.

[0032] Optionally, forming a first electrode on one side of the electro-optical modulator includes:

[0033] forming a first electrode on one side of the electro-optical modulator by using an electroplating process;

[0034] The forming of a second electrode on the other side of the electro-optical modulator comprises:

[0035] A second electrode is formed on the other side of the electro-optical modulator by using an electroplating process.

[0036] The embodiment of the present application provides a three-dimensional optoelectronic packaging structure, which includes: a packaging substrate and an electric chip arranged on one side of the packaging substrate, a first electrode, the first electrode is arranged on the side of the electric chip away from the packaging substrate, an electro-optical modulator, the electro-optical modulator is arranged on the side of the first electrode away from the packaging substrate, the electro-optical modulator and the electric chip are electrically connected using the first electrode, and a second electrode, the second electrode is arranged on the side of the electro-optical modulator away from the packaging substrate, the first electrode and the second electrode are used to provide an electric field for the electro-optical modulator to perform electro-optical modulation. It can be seen that in the present application, the first electrode and the second electrode are used to provide the electro-optical modulator with a longitudinal electric field that vertically passes through the electro-optical modulator. Field, that is, providing a Z-cut electrode for the electro-optical modulator, can greatly reduce the packaging space for the electro-optical modulator package compared to providing an X-cut electrode and a Y-cut electrode for the electro-optical modulator, and the electro-optical modulator based on the Z-cut electrode is isotropic on the plane, can allow bending and folding, further reducing the space occupied by the three-dimensional optoelectronic packaging structure, and improving the integration. The distance between the first electrode and the electro-optical modulator is relatively close, which can reduce light loss, improve photoelectric coupling, and improve modulation efficiency. In the present application, the electro-optical modulator and the electrical chip are electrically connected using the first electrode, and the interconnection distance between the electro-optical modulator and the electrical chip is relatively short, which can improve the interconnection bandwidth. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0038] Figure 1 A schematic structural diagram of a three-dimensional optoelectronic packaging structure provided in an embodiment of the present application is shown;

[0039] Figure 2 A schematic structural diagram of another three-dimensional optoelectronic packaging structure provided in an embodiment of the present application is shown;

[0040] Figure 3 A schematic diagram of a process of a three-dimensional optoelectronic packaging method provided in an embodiment of the present application is shown;

[0041] Figure 4-Figure 15 A structural schematic diagram of a three-dimensional optoelectronic packaging structure manufactured by a three-dimensional optoelectronic packaging method provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0042] In order to help those skilled in the art better understand the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0043] In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0044] This application is described in detail with reference to schematic diagrams. When describing the embodiments of this application, for ease of explanation, cross-sectional views of device structures may be partially enlarged and not to scale. Furthermore, these schematic diagrams are merely illustrative and should not limit the scope of protection of this application. Furthermore, in actual production, three-dimensional dimensions, including length, width, and depth, should be included.

[0045] With the development of current semiconductor technology, semiconductor devices have become diverse and have been applied in various fields, such as electro-optical (EO) modulators in optical communications. EO modulators are one of the key functional components in optical communication systems. They can convert the driving electrical signal onto an optical carrier and transmit it in the optical domain.

[0046] Thin-film lithium niobate (LNOI) possesses excellent physical properties, such as a wide transparency bandwidth, a strong electro-optic coefficient, and good thermal stability, making it an ideal material for manufacturing high-performance electro-optic modulators. However, the difficulty of etching conventional LNOI modulators is a major constraint on their packaging and application within optoelectronic integrated modules. To accumulate π phase shifts, conventional LNOI modulators require lengths of millimeters or even centimeters and a reasonable drive voltage. This large device size fails to meet the compact design requirements of optoelectronic integration, hindering the integration of these devices.

[0047] In other words, the current electro-optic modulator has a problem of low integration when it is packaged and cannot meet the needs of actual applications.

[0048] Based on this, an embodiment of the present application provides a three-dimensional optoelectronic packaging structure, which includes: a packaging substrate and an electric chip arranged on one side of the packaging substrate, a first electrode, the first electrode is arranged on the side of the electric chip away from the packaging substrate, an electro-optical modulator, the electro-optical modulator is arranged on the side of the first electrode away from the packaging substrate, the electro-optical modulator and the electric chip are electrically connected using the first electrode, and a second electrode, the second electrode is arranged on the side of the electro-optical modulator away from the packaging substrate, the first electrode and the second electrode are used to provide an electric field for the electro-optical modulator to perform electro-optical modulation. It can be seen that in the present application, the first electrode and the second electrode are used to provide the electro-optical modulator with a longitudinal field that vertically passes through the electro-optical modulator. To the electric field, that is, providing a Z-cut electrode for the electro-optical modulator, compared with providing an X-cut electrode and a Y-cut electrode for the electro-optical modulator, the packaging space for the electro-optical modulator can be greatly reduced, and the electro-optical modulator based on the Z-cut electrode is isotropic on the plane, which allows bending and folding, further reducing the space occupied by the three-dimensional optoelectronic packaging structure and improving the integration. The distance between the first electrode and the electro-optical modulator is relatively close, which can reduce light loss, improve photoelectric coupling, and improve modulation efficiency. In the present application, the electro-optical modulator and the electrical chip are electrically connected using the first electrode, and the interconnection distance between the electro-optical modulator and the electrical chip is relatively short, which can improve the interconnection bandwidth.

[0049] In order to better understand the technical solutions and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

[0050] See also Figure 1 , which is a structural schematic diagram of a three-dimensional optoelectronic packaging structure provided in an embodiment of the present application.

[0051] The three-dimensional optoelectronic packaging structure 100 provided in the embodiment of the present application includes: a packaging substrate 110 and an electronic chip 120 disposed on one side of the packaging substrate 110 .

[0052] In the embodiment of the present application, the packaging substrate 110 is a substrate 110 that provides support for the entire three-dimensional optoelectronic packaging structure, and an electrical chip (EIC) 120 may be disposed on one side of the packaging substrate 110. The electrical chip 120 is used to provide electrical signals.

[0053] The three-dimensional optoelectronic packaging structure 100 provided in the embodiment of the present application includes a first electrode 130, which is disposed on a side of the electronic chip 120 away from the packaging substrate 110, that is, the first electrode 130 can be disposed on the electronic chip 120. The first electrode 130 can be made of a material with good electrical conductivity, such as a metal material.

[0054] The three-dimensional optoelectronic packaging structure 100 provided in the embodiment of the present application includes an electro-optical modulator 140 . The electro-optical modulator 140 is disposed on a side of the first electrode 130 away from the packaging substrate 110 , that is, the electro-optical modulator 140 is disposed on the first electrode 130 .

[0055] In the embodiment of the present application, the electro-optic modulator 140 and the electrical chip 120 can be electrically connected using the first electrode 130. Figure 1 As shown, there is no other material between the first electrode 130 and the electro-optic modulator 140 except the first electrode 130, which can reduce light loss when light is transmitted in the electro-optic modulator 140. In addition, in this application, the electro-optic modulator 140 and the electronic chip 120 are electrically connected using the first electrode 130, so that the interconnection distance between the electro-optic modulator 140 and the electronic chip 120 is short, which can effectively shorten the high-speed interconnection path between the electro-optic modulator 140 and the electronic chip 120 and improve the interconnection bandwidth.

[0056] The three-dimensional optoelectronic packaging structure 100 provided in the embodiment of the present application includes: a second electrode 150, and the second electrode 150 is arranged on the side of the electro-optic modulator 140 away from the packaging substrate 110, that is, the second electrode 150 is arranged on the electro-optic modulator 140. Specifically, the first electrode 130 and the second electrode 150 can be part of the metal interconnect layer (RDL). As an example, in order to improve the electrical contact between the electric chip 120 and the first electrode 130, a ball grid array (BGA) 131 can be used to realize the electrical connection between the first electrode 130 and the electric chip, that is, the electrical connection between the electric chip 120 and the electro-optic modulator 140 is realized by using BGA and the metal interconnect layer, refer to Figure 2 shown.

[0057] In an embodiment of the present application, the first electrode 130 and the second electrode 150 are used to provide an electric field for electro-optical modulation by the electro-optical modulator 140. The first electrode 130 and the second electrode 150 are used to provide a longitudinal electric field that vertically passes through the electro-optical modulator 140, that is, to provide the electro-optical modulator 140 with a Z-cut electrode. This eliminates the need to etch the positions of the first electrode 130 and the second electrode 150 on the lithium niobate film to form the electrodes of the electro-optical modulator 140. Compared to providing the electro-optical modulator 140 with X-cut and Y-cut electrodes formed by etching, this can greatly reduce the packaging space required for the electro-optical modulator 140. Furthermore, the electro-optical modulator 140 based on the Z-cut electrode is isotropic in a plane and can be bent and folded, further reducing the space occupied by the three-dimensional optoelectronic packaging structure and improving the integration level.

[0058] Specifically, the direction of the electric field provided by the first electrode 130 and the second electrode 150 is from the first electrode 130 to the second electrode 150, the optical waveguide propagation direction of the electro-optical modulator 140 is the extension direction of the first electrode 130 or the second electrode 150, and the optical waveguide propagation direction is perpendicular to the electric field direction.

[0059] In the embodiment of the present application, the electro-optic modulator 140 is a heterogeneous waveguide structure, which includes a lithium niobate film 141 and a silicon pattern structure 142. Figure 2 As shown, the on-silicon pattern structure 142 is disposed on a surface of the lithium niobate film 141 that is away from the packaging substrate 110. In other words, the on-silicon pattern structure 142 is disposed on the lithium niobate film 141. This embodiment of the present application utilizes the on-silicon pattern structure 142 and the lithium niobate film 141 to form a ridge-type optical waveguide structure. By utilizing silicon material to form the pattern structure, the lithium niobate film 141 is avoided from forming the ridge-type optical waveguide structure. This avoids etching the lithium niobate film 141, thereby reducing the difficulty of etching to form the ridge-type structure and, therefore, reducing the difficulty of forming the electro-optical modulator 140.

[0060] In practical applications, optical waveguides formed using silicon and lithium niobate have a higher refractive index and can reduce the bending radius. They can also achieve electro-optical modulation when the waveguide is bent, which can further reduce the waveguide size, reduce the size of the three-dimensional optoelectronic packaging structure, and improve the integration.

[0061] In an embodiment of the present application, the electro-optic modulator 140 includes a first buried oxide layer 143 and a second buried oxide layer 144 . The first buried oxide layer 143 is disposed between the first electrode 130 and the lithium niobate film 141 , and the second buried oxide layer 144 is disposed between the on-silicon graphic structure 142 and the second electrode 150 .

[0062] In the embodiment of the present application, the portion between the second buried oxide layer 144 and the lithium niobate film 141, excluding the on-silicon pattern structure 142, is a resin adhesive 145. The resin adhesive 145 can be used to form the heterogeneous waveguide structure of the electro-optic modulator 140 and enhance the overall bonding strength of the electro-optic modulator. Specifically, the resin adhesive 145 can be BCB adhesive.

[0063] In the embodiment of the present application, the electronic chip 120 may be packaged using an injection molding structure 160 , which also facilitates high-reliability integration of the optoelectronic modulator and prevents damage to the electronic chip 120 .

[0064] In practical applications, in addition to utilizing the first electrode 130 to achieve electrical connection between the electronic chip 120 and the electro-optical modulator 140, the remaining portion of the metal interconnect layer can also be utilized. As an example, an interconnect layer can also be provided on the surface of the electronic chip 120 on the side closest to the package substrate 110. Metal contacts 161 extending through the injection molding structure 160 can be utilized to electrically connect the interconnect layer on the electronic chip 120 side and the metal interconnect layer on the electro-optical modulator 140 side. Ultimately, the electronic chip 120 and the electro-optical modulator 140 can be electrically connected to each other externally via the metal contacts 161.

[0065] Specifically, the metal contact 161 may be formed by filling a vertical hole (Through Molding Via, TMV) through the injection molding structure 160 with a metal material.

[0066] In an embodiment of the present application, a three-dimensional optoelectronic package structure 100 includes a conductive structure 170 and pins 121. The conductive structure 170 is disposed around the electronic chip 120 and the electro-optical modulator 140. The pins 121 are disposed between the electronic chip 120 and the package substrate 110. The electronic chip 120 can use the pins 121 to input and output electrical signals. The conductive structure 170 is used to connect the second electrode 150 to the ground network in the pins 121.

[0067] Specifically, the pins 121 may be a ball grid array (BGA), which facilitates broadband electrical transmission.

[0068] In practical applications, the pin 121 can be arranged between the packaging substrate 110 and the electrical chip 120. A metal interconnection layer can be provided on the packaging substrate 110 to realize electrical connection with the pin 121. The conductive structure 170 utilizes the metal interconnection layer and the pin 121 to realize electrical connection of the ground network.

[0069] In practical applications, the conductive structure 170 may include a first conductive structure 171 and a second conductive structure 172. The first conductive structure 171 is used to connect the second electrode 150 and the second conductive structure 172. The first conductive structure 171 may be conductive glue or conductive silver paste. The first conductive structure 171 may be a metal lid.

[0070] In other words, the conductive structure 170 not only plays the role of transmitting electrical signals, but also can realize the packaging protection of the electrical chip 120 and the electro-optical modulator 140, thereby improving the integration of the three-dimensional optoelectronic packaging structure.

[0071] It can be seen that the embodiment of the present application proposes a three-dimensional optoelectronic packaging structure based on a three-dimensional optoelectronic integration of a Z-cut electro-optical modulator, which avoids etching to form a ridge structure on lithium niobate, reduces process difficulty, removes substrate silicon, and reduces light loss. The Z-cut electro-optical modulator can increase the overlap integral of the electric field and the optical field, and can also achieve electro-optical modulation when the waveguide is bent and the structure changes. At the same time, a three-dimensional integration method is adopted, so that the electrical chip and the electro-optical modulator are assembled back to back, and the high-speed interconnection path is short. The embodiment of the present application is a potential optoelectronic integrated three-dimensional optoelectronic packaging structure that can achieve high bandwidth, low optical loss, high modulation efficiency, and low half-wave voltage.

[0072] The embodiment of the present application provides a three-dimensional optoelectronic packaging structure, which includes: a packaging substrate and an electric chip arranged on one side of the packaging substrate, a first electrode, the first electrode is arranged on the side of the electric chip away from the packaging substrate, an electro-optical modulator, the electro-optical modulator is arranged on the side of the first electrode away from the packaging substrate, the electro-optical modulator and the electric chip are electrically connected using the first electrode, and a second electrode, the second electrode is arranged on the side of the electro-optical modulator away from the packaging substrate, the first electrode and the second electrode are used to provide an electric field for the electro-optical modulator to perform electro-optical modulation. It can be seen that in the present application, the first electrode and the second electrode are used to provide the electro-optical modulator with an electric field that vertically passes through the electro-optical modulator. The longitudinal electric field, that is, providing a Z-cut electrode for the electro-optical modulator, can greatly reduce the packaging space for the electro-optical modulator compared to providing an X-cut electrode and a Y-cut electrode for the electro-optical modulator. In addition, the electro-optical modulator based on the Z-cut electrode is isotropic in the plane and can allow bending and folding, further reducing the space occupied by the three-dimensional optoelectronic packaging structure and improving the integration. The distance between the first electrode and the electro-optical modulator is relatively close, which can improve the photoelectric coupling and the modulation efficiency. In the present application, the electro-optical modulator and the electrical chip are electrically connected using the first electrode, and the interconnection distance between the electro-optical modulator and the electrical chip is relatively short, which can improve the interconnection bandwidth.

[0073] Based on the three-dimensional optoelectronic packaging structure provided in the above embodiment, the embodiment of the present application further provides a three-dimensional optoelectronic packaging method, and its working principle is described in detail below with reference to the accompanying drawings.

[0074] See also Figure 3 , which is a flow chart of a three-dimensional optoelectronic packaging method provided in an embodiment of the present application.

[0075] The three-dimensional optoelectronic packaging method provided in the embodiment of the present application includes the following steps:

[0076] S101, forming an electro-optical modulator, reference Figure 4-Figure 7 shown.

[0077] In the embodiment of the present application, the electro-optic modulator 140 may be formed first so as to subsequently package the electro-optic modulator 140 .

[0078] The specific steps of forming the electro-optic modulator 140 are as follows:

[0079] S101A, providing a silicon-on-insulator (SOI) substrate 200, referring to Figure 4 shown.

[0080] In the embodiment of the present application, the SOI substrate 200 includes a bottom silicon substrate 201, a second buried oxide layer 144, and a top silicon substrate 202 stacked in sequence. Specifically, the SOI substrate may be an SOI wafer.

[0081] S101B, etching the top silicon substrate 202 to form a silicon pattern structure 142, refer to Figure 5 shown.

[0082] In the embodiment of the present application, the top silicon substrate 202 of the SOI substrate 200 may be etched to form the on-silicon pattern structure 142 .

[0083] S101C, providing a first substrate 300, reference Figure 6 shown.

[0084] In the embodiment of the present application, a first buried oxide layer 143 and a lithium niobate thin film 141 are formed on the first substrate 300 , wherein the lithium niobate thin film 141 covers the first buried oxide layer 143 .

[0085] S101D, with the lithium niobate film 141 facing the silicon pattern structure 142, the first substrate 300 and the SOI substrate 200 are bonded, referring to Figure 7 shown.

[0086] In the embodiment of the present application, the first substrate 300 and the SOI substrate 200 can be bonded with the lithium niobate film 141 facing the silicon pattern structure 142 , and the silicon pattern structure 142 and the lithium niobate film 141 can form the electro-optical modulator 140 .

[0087] Specifically, the first substrate 300 and the SOI substrate 200 may be bonded using a resin adhesive 145 . That is, the portion between the second buried oxide layer 144 and the lithium niobate film 141 excluding the on-silicon pattern structure 142 is the resin adhesive 145 .

[0088] S102, forming a first electrode 130 on one side of the electro-optic modulator 140, referring to Figure 9 shown.

[0089] In the embodiment of the present application, before forming the first electrode 130 on one side of the electro-optic modulator 140, the first substrate 300 may be removed. Figure 8 Specifically, the first substrate 300 can be removed by chemical mechanical polishing (CMP) or wet etching, leaving the lithium niobate film 141 and the second buried oxide layer 144.

[0090] After removing the first substrate 300 , the first electrode 130 may be formed on one side of the electro-optic modulator 140 . Specifically, the first electrode 130 may be formed by an electroplating process.

[0091] S103, the electric chip 120 is arranged on the first electrode 130, referring to Figure 10 shown.

[0092] In the embodiment of the present application, after the first electrode 130 is formed, the electrical chip 120 may be disposed on the first electrode 130 , so that the electro-optical modulator 140 and the electrical chip 120 are electrically connected via the first electrode 130 .

[0093] Specifically, the electric chip 120 can be flipped on the first electrode 130, that is, the electric chip 120 can be flipped on the electro-optical modulator 140, and an injection molding structure 160 is formed around the electric chip 120 to encapsulate the electric chip 120. The injection molding structure 160 is thinned by CMP. Figure 10 shown.

[0094] In practical applications, the injection molding structure 160 may be etched to form a through molding via (TMV) that penetrates the injection molding structure 160, and then a metal material is filled in the vertical hole to form the metal contact 161. Specifically, the metal contact 161 may be formed by filling the vertical hole with electroplating.

[0095] After forming the metal contact 161, a pin 121 may be formed on the side of the electrical chip 120 away from the first electrode 130. Specifically, the pin 121 may be formed by an electroplating process. Figure 11 shown.

[0096] In practical applications, in order to improve the electrical connection between the electrical chip 120 and the pin 121 , an interconnection layer may be formed on the side of the injection molding structure 160 and the electrical chip 120 away from the first electrode 130 before forming the pin 121 , and the pin 121 is arranged on the interconnection layer.

[0097] S104, forming a second electrode 150 on the other side of the electro-optical modulator 140, referring to Figure 14 shown.

[0098] In the embodiment of the present application, before forming the second electrode 150 on the other side of the electro-optic modulator 140, the bottom silicon substrate 201 may be removed. Figure 13 As shown. Specifically, chemical mechanical polishing (CMP) or wet etching can be used to remove the underlying silicon substrate 201. Removing the underlying silicon substrate 201 helps reduce light loss during transmission within the electro-optic modulator 140. Furthermore, the electro-optic modulator 140 and the electronic chip 120 are electrically connected using the first electrode 130, shortening the interconnection distance between the electro-optic modulator 140 and the electronic chip 120. This effectively shortens the high-speed interconnection path between the electro-optic modulator 140 and the electronic chip 120, thereby increasing the interconnection bandwidth.

[0099] In practical applications, the pins 121 can be protected before removing the bottom silicon substrate 201. Specifically, the pins 121 can be bonded to the temporary carrier 400 by bonding glue. Figure 12 shown.

[0100] In the embodiment of the present application, after the pin 121 is protected and the underlying silicon substrate 201 is removed, the second electrode 150 can be formed on the other side of the electro-optic modulator 140. Figure 14 As shown, the second electrode 150 can be formed by an electroplating process.

[0101] S105, with the electrical chip 120 facing the packaging substrate 110, the electrical chip 120 and the electro-optical modulator 140 are placed on the packaging substrate 110, referring to Figure 1 shown.

[0102] In the embodiment of the present application, before the electrical chip 120 and the electro-optical modulator 140 are placed on the package substrate 110, the temporary carrier 400 may be removed. Figure 15 shown.

[0103] After removing the temporary carrier 400, the pins 121 are exposed, and the electrical chip 120 and the electro-optical modulator 140 are placed on the packaging substrate 110 with the electrical chip 120 facing the packaging substrate 110. Figure 1 shown.

[0104] After bonding the electrical chip 120 and the package substrate 110, a conductive structure 170 may be formed. Figure 2 shown.

[0105] The various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences between the other embodiments. In particular, the method embodiments are described briefly because they are generally similar to the structural embodiments. For relevant parts, refer to the description of the structural embodiments.

[0106] The descriptions of the processes or structures corresponding to the above figures have different emphases. For parts that are not described in detail in a certain process or structure, please refer to the relevant descriptions of other processes or structures.

[0107] The above is only a preferred embodiment of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above-disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are still within the scope of protection of the technical solution of the present application.

[0108] Based on the implementation methods provided in the above aspects, this application can also be further combined to provide more implementation methods.

Claims

1. A three-dimensional optoelectronic packaging structure, characterized in that: The three-dimensional optoelectronic packaging structure includes: A packaging substrate and an electric chip arranged on one side of the packaging substrate; a first electrode, the first electrode being arranged on a side of the electronic chip away from the packaging substrate; an electro-optical modulator, the electro-optical modulator being arranged on a side of the first electrode away from the packaging substrate, the electro-optical modulator and the electronic chip being electrically connected via the first electrode; The second electrode is arranged on a side of the electro-optic modulator away from the packaging substrate; the first electrode and the second electrode are used to provide an electric field for the electro-optic modulator to perform electro-optic modulation.

2. The three-dimensional optoelectronic packaging structure according to claim 1, characterized in that: The electro-optic modulator includes a heterogeneous waveguide structure, which includes a lithium niobate film and a silicon-on-graphic structure. The silicon-on-graphic structure is arranged on a side of the lithium niobate film away from the packaging substrate.

3. The three-dimensional optoelectronic packaging structure according to claim 2, characterized in that: The electro-optic modulator includes a first buried oxide layer and a second buried oxide layer; The first buried oxide layer is arranged between the first electrode and the lithium niobate film, and the second buried oxide layer is arranged between the on-silicon pattern structure and the second electrode.

4. The three-dimensional optoelectronic packaging structure according to claim 3, characterized in that: The portion between the second buried oxide layer and the lithium niobate film except the on-silicon pattern structure is resin glue.

5. The three-dimensional optoelectronic packaging structure according to any one of claims 1 to 4, characterized in that: The three-dimensional optoelectronic packaging structure includes a conductive structure and a pin, and the conductive structure is used to connect the second electrode and the pin.

6. A three-dimensional optoelectronic packaging method, characterized in that: The method comprises: forming an electro-optic modulator; forming a first electrode on one side of the electro-optical modulator; An electrical chip is arranged on the first electrode; the electro-optical modulator and the electrical chip are electrically connected via the first electrode; forming a second electrode on the other side of the electro-optical modulator; The electronic chip and the electro-optical modulator are arranged on the packaging substrate with the electronic chip facing the packaging substrate.

7. The three-dimensional optoelectronic packaging method according to claim 6, characterized in that: The forming of the electro-optic modulator comprises: Providing a silicon substrate on an insulating substrate; the silicon substrate on the insulating substrate comprises a bottom silicon substrate, a second buried oxide layer and a top silicon substrate stacked in sequence; Etching the top silicon substrate to form a pattern structure on silicon; Providing a first substrate, on which a first buried oxide layer and a lithium niobate thin film are formed; The first substrate and the silicon substrate on the insulating substrate are bonded in a direction in which the lithium niobate film faces the pattern structure on silicon. The pattern structure on silicon and the lithium niobate film constitute the electro-optical modulator.

8. The three-dimensional optoelectronic packaging method according to claim 7, characterized in that: The step of bonding the first substrate and the silicon substrate on the insulating substrate with the lithium niobate film facing the pattern structure on the silicon comprises: The first substrate and the silicon substrate on the insulating substrate are bonded by resin glue, and the portion between the second buried oxide layer and the lithium niobate film except the graphic structure on the silicon is resin glue.

9. The three-dimensional optoelectronic packaging method according to claim 7, characterized in that: Before forming the first electrode on one side of the electro-optical modulator, the method further includes: removing the first substrate; Before forming the second electrode on the other side of the electro-optical modulator, the method further includes: The underlying silicon substrate is removed.

10. The three-dimensional optoelectronic packaging method according to any one of claims 6 to 9, characterized in that: The forming of a first electrode on one side of the electro-optical modulator comprises: forming a first electrode on one side of the electro-optical modulator by using an electroplating process; The forming of a second electrode on the other side of the electro-optical modulator comprises: A second electrode is formed on the other side of the electro-optical modulator by using an electroplating process.

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