Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium
By using modified gas to form a modified film during semiconductor manufacturing, and combining this with plasma-activated gas removal and protective film forming processes, the problem of uneven etching caused by plasma directionality was solved, achieving an isotropic etching effect.
CN115732356BActive Publication Date: 2026-06-09KOKUSAI DENKI KK
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- KOKUSAI DENKI KK
- Filing Date
- 2022-07-26
- Publication Date
- 2026-06-09
AI Technical Summary
Technical Problem
In the prior art, plasma orientation causes etching to occur in the vertical direction, resulting in differences in etching speed in the horizontal direction, which limits the uniformity of semiconductor manufacturing processes.
Method used
A modified film is formed by using a modified gas, and isotropic etching is achieved by simultaneously supplying a removal gas activated by plasma and a protective film forming gas.
Benefits of technology
Isotropic etching is achieved by simultaneously supplying protective film forming gas and the modified gas of the etching apparatus, as well as the process of supplying protective film forming gas.
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Smart Images
Figure CN115732356B_ABST
Abstract
The present invention relates to a semiconductor device manufacturing method, a substrate processing apparatus, and a recording medium. A technology capable of realizing isotropic etching while reducing the influence of plasma directivity is provided. The semiconductor device manufacturing method has a modification step of supplying a modification gas to modify a deposited film on a substrate on which no pattern is provided to form a modified film, and a modified film removal step of removing the modified film at a time point at which at least a plasma-activated removal gas and a protective film forming gas are supplied simultaneously.
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