A method for encapsulating a perovskite device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NANKAI UNIV
- Filing Date
- 2022-12-19
- Publication Date
- 2026-06-26
Smart Images
Figure CN115734627B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of perovskite device technology, and more particularly to a packaging method for perovskite devices. Background Technology
[0002] In the photovoltaic field, the power conversion efficiency (PCE) of perovskite / crystalline silicon tandem solar cells (PSTs) has reached 31.3%, which greatly exceeds the efficiency of commercial silicon and copper indium gallium selenide solar cells. This indicates that power conversion efficiency is no longer the main limiting factor for the commercialization of this type of high-efficiency photovoltaic. Stability is the key to its large-scale application, and humidity is a key issue for the practical application of perovskite / crystalline silicon tandem solar cell photovoltaic technology. Therefore, PSTs require encapsulation to prevent moisture damage. Although there are reports on the encapsulation of single-junction perovskite solar cells, there are currently no specific reports applicable to the encapsulation of different single-junction perovskite / silicon tandem solar cells, especially cells conformally grown on pyramid-textured silicon substrates. In fact, the glass substrate in a single-junction perovskite solar cell can serve as both the light incident surface and a protective layer. Therefore, during encapsulation, only a cover glass is needed as the back protective layer, and butyl rubber as the edge sealing material. The influence of the material's refractive index and transmittance on light reflection and transmittance is not considered. However, for PSTs, the incident light comes from the direction of the perovskite layer. If the same method is used to encapsulate PSTs, an air layer will exist between the cover glass and the perovskite layer, causing light loss and reducing efficiency. Therefore, encapsulating PSTs requires a filler material with a similar refractive index and high transmittance to glass to reduce light loss.
[0003] Therefore, finding a multifunctional encapsulating material is crucial without compromising the efficiency of PSTs. The encapsulating material should meet the following requirements: an appropriate refractive index to match the cover glass, thereby reducing light loss; heat resistance, oxygen resistance, and UV resistance; a suitable coefficient of thermal expansion (CTE) to match the perovskite layer deposition, preventing delamination; easy and low-temperature processing, as operating temperatures exceeding 140°C will damage the perovskite, leading to reduced series efficiency; furthermore, the encapsulating material should have a better ability to adsorb lead ions that damage perovskite components, reducing environmental pollution. Summary of the Invention
[0004] The purpose of this invention is to provide a packaging method for perovskite devices, which can increase the photocurrent density of the device, thereby improving the device efficiency and significantly improving the outdoor stability of the device.
[0005] To achieve the above-mentioned objectives, the present invention provides the following technical solution:
[0006] This invention provides a packaging method for perovskite devices, comprising the following steps:
[0007] Methyl methacrylate, 2-methyl-2-acrylate-2-hydroxyethyl phosphate, and 2-hydroxy-2-methyl-1-phenylpropanone were mixed to obtain an encapsulation paste.
[0008] After the encapsulation paste is coated onto the surface of the perovskite device, it is covered with a glass plate and then photocured.
[0009] Preferably, the mass ratio of methyl methacrylate, 2-methyl-2-acrylate-2-hydroxyethyl phosphate and 2-hydroxy-2-methyl-1-phenylpropanone is 100:(0-10):3;
[0010] Furthermore, the content of the 2-methyl-2-acrylic acid-2-hydroxyethyl phosphate is not 0.
[0011] Preferably, the mixing comprises mixing methyl methacrylate and 2-methyl-2-acrylate-2-hydroxyethyl phosphate, followed by mixing with 2-hydroxy-2-methyl-1-phenylpropanone under dark conditions.
[0012] Preferably, the photocuring uses ultraviolet light; the wavelength of the photocuring is 320-450 nm, and the time is 1-30 min.
[0013] Preferably, the perovskite device includes a perovskite solar cell or a tandem cell containing perovskite.
[0014] Preferably, the perovskite device comprises a bottom substrate, a bottom transparent conductive layer, a hole transport layer, a perovskite active layer, an electron transport layer, and a top electrode layer, which are stacked sequentially.
[0015] Preferably, the perovskite active layer is an ABX3 type perovskite semiconductor material, wherein A is one or more of alkylamines, alkylamidines and alkali elements, B is lead and tin, and X is one or more of iodine, bromine and chlorine.
[0016] Preferably, the bottom substrate is one or more of the following: transparent glass, flexible polyethylene terephthalate, flexible polyethylene terephthalate, silicon bottom battery, copper indium gallium selenide bottom battery, copper zinc tin sulfur bottom battery, perovskite bottom battery, and cadmium telluride bottom battery.
[0017] The bottom transparent conductive layer is one or more of the following: ITO transparent electrode, FTO transparent electrode, AZO transparent electrode, IGZO transparent electrode, graphene / oxide electrode, and oxide / metal / oxide multilayer composite transparent electrode;
[0018] The top electrode layer includes a metal electrode and / or a carbon electrode.
[0019] Preferably, the hole transport layer is made of one or more of the following: poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetra(di-p-tolylamino)spiro-9,9', nickel oxide, fullerene derivatives, and self-limiting monolayers.
[0020] Preferably, the material of the electron transport layer is tin dioxide, titanium dioxide, zinc oxide, or [6,6]-phenyl C. 61 -One or more of methyl butyrate, fullerene, zinc tin oxide and graphene.
[0021] This invention provides a method for encapsulating perovskite devices, comprising the following steps: mixing methyl methacrylate, 2-methyl-2-acrylate-2-hydroxyethyl phosphate, and 2-hydroxy-2-methyl-1-phenylpropanone to obtain an encapsulation slurry; coating the encapsulation slurry onto the surface of the perovskite device, covering it with a glass plate, and then photocuring. This invention, by introducing a uniformly mixed mixture of methyl methacrylate, 2-methyl-2-acrylate-2-hydroxyethyl phosphate, and 2-hydroxy-2-methyl-1-phenylpropanone between the glass plate and the perovskite device, and then photocuring, allows the acrylic groups to spontaneously solidify from a liquid state into a polymer (such as...) in the presence of the photoinitiator 2-hydroxy-1-methyl-1-phenylpropanone. Figure 2 (As shown); the cured polymer has excellent waterproof properties and high permeability, thus completing the encapsulation of perovskite solar cells. Simultaneously, the monomer contains phosphonic acid groups, which can protect the Pb in the perovskite. 2+ It has a strong chelating effect, preventing the destruction of Pb in perovskite. 2+ It reduces environmental pollution. Meanwhile, the encapsulation material has a similar refractive index to glass, which reduces light reflection, thereby increasing the photocurrent density of the device and thus improving its efficiency, significantly enhancing the outdoor stability of battery efficiency. Attached Figure Description
[0022] Figure 1 This is a schematic diagram of the packaging structure of the perovskite device according to the present invention; wherein, 1-perovskite device, 2-packaging layer, 3-glass plate, 4-ultraviolet light irradiation;
[0023] Figure 2 These are actual images of the encapsulation material before and after photocuring during the encapsulation process of this invention;
[0024] Figure 3 The above are schematic diagrams of the stacked solar cells described in Examples 1-3.
[0025] Figure 4 The JV curves are for the unencapsulated or encapsulated tandem solar cells described in Example 1.
[0026] Figure 5The JV curves are for the unencapsulated or encapsulated tandem solar cells described in Example 2.
[0027] Figure 6 The JV curves are for the unencapsulated or encapsulated tandem solar cell described in Example 3. Detailed Implementation
[0028] like Figure 1 As shown, the present invention provides a packaging method for perovskite devices, comprising the following steps:
[0029] Methyl methacrylate, 2-methyl-2-acrylate-2-hydroxyethyl phosphate, and 2-hydroxy-2-methyl-1-phenylpropanone were mixed to obtain an encapsulation paste.
[0030] After the encapsulation paste is coated onto the surface of the perovskite device, it is covered with a glass plate and then photocured.
[0031] In this invention, unless otherwise specified, all raw materials used in the preparation are commercially available products well known to those skilled in the art.
[0032] The present invention mixes methyl methacrylate, 2-methyl-2-acrylate-2-hydroxyethyl phosphate and 2-hydroxy-2-methyl-1-phenylpropanone to obtain an encapsulation slurry.
[0033] In this invention, the mass ratio of methyl methacrylate, 2-methyl-2-acrylate-2-hydroxyethyl phosphate and 2-hydroxy-2-methyl-1-phenylpropanone is preferably 100:(0-10):3, more preferably 100:(2-8):3, and most preferably 100:(3-6):3, and the content of 2-methyl-2-acrylate-2-hydroxyethyl phosphate is not 0.
[0034] In this invention, the mixing preferably comprises mixing methyl methacrylate and 2-methyl-2-acrylate-2-hydroxyethyl phosphate, followed by mixing with 2-hydroxy-2-methyl-1-phenylacetone under dark conditions. This invention does not impose any particular limitations on the mixing process of methyl methacrylate and 2-methyl-2-acrylate-2-hydroxyethyl phosphate, or the mixing process with 2-hydroxy-2-methyl-1-phenylacetone; any process well-known to those skilled in the art can be used.
[0035] After obtaining the encapsulation paste, the present invention coats the encapsulation paste onto the surface of the perovskite device and then covers it with a glass plate for photocuring.
[0036] The present invention does not impose any special limitations on the coating process; any process known to those skilled in the art can be used.
[0037] In this invention, ultraviolet light is preferably used for photocuring; the wavelength of photocuring is preferably 320-450 nm, more preferably 350 nm, and the time is preferably 1-30 min.
[0038] In this invention, the polymer obtained after photocuring has excellent heat resistance, oxygen resistance, and UV irradiation resistance; a suitable coefficient of thermal expansion matches the perovskite layer, preventing the perovskite layer from cracking; it is convenient for low-temperature processing; in addition, the cured polymer has a better ability to adsorb lead ions in the damaged perovskite components, reducing environmental pollution.
[0039] In this invention, the perovskite device preferably includes a perovskite solar cell or a tandem cell containing perovskite; the perovskite solar cell is preferably a perovskite solar cell with a bandgap of 1.1 to 1.8 eV.
[0040] In this invention, the perovskite device preferably comprises a bottom substrate, a bottom transparent conductive layer, a hole transport layer, a perovskite active layer, an electron transport layer, and a top electrode layer stacked sequentially.
[0041] In this invention, the bottom substrate is one or more of the following: transparent glass, flexible polyethylene terephthalate, flexible polyethylene terephthalate, silicon-based battery, copper indium gallium selenide (CIGS)-based battery, copper zinc tin sulfur (CFS)-based battery, perovskite-based battery, and cadmium telluride (CdTe)-based battery. This invention does not impose any particular limitation on the thickness of the bottom substrate; any thickness well-known to those skilled in the art can be used. In embodiments of this invention, the bottom substrate is specifically a silicon-based battery or a textured silicon-based battery.
[0042] In this invention, the bottom transparent conductive layer is one or more of the following: ITO transparent electrode, FTO transparent electrode, AZO transparent electrode, IGZO transparent electrode, graphene / oxide electrode, and oxide / metal / oxide multilayer composite transparent electrode. This invention does not impose any special limitation on the thickness of the bottom transparent conductive layer; any thickness well-known to those skilled in the art can be used. This invention also does not impose any special limitation on the preparation method of the bottom transparent conductive layer; any method well-known to those skilled in the art can be used. In an embodiment of this invention, the bottom transparent conductive layer is prepared by deposition. In an embodiment of this invention, the bottom transparent conductive layer is specifically an ITO transparent electrode.
[0043] In this invention, the hole transport layer is made of one or more of the following materials: poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,2',7,7'-tetra(di-p-tolylamino)spiro-9,9' (Sipro-TTB), nickel oxide, fullerene derivatives, and self-limiting monolayers. When the hole transport layer is made of two or more of the above-mentioned materials, this invention does not impose any special limitations on the ratio of the above-mentioned substances; they can be mixed in any ratio. This invention does not impose any special limitations on the thickness and preparation method of the hole transport layer; thickness and preparation methods well known to those skilled in the art can be used. In embodiments of this invention, the hole transport layer is prepared by spin coating of PTAA, by sputtering of nickel oxide, or by surface evaporation of Sipro-TTB hole transport layer.
[0044] In this invention, the perovskite active layer is an ABX3 type perovskite semiconductor material, wherein A is one or more of alkylamines, alkylamidines, and alkali elements, B is lead or tin, and X is one or more of iodine, bromine, and chlorine. This invention does not impose any special limitation on the thickness of the perovskite active layer; thicknesses well-known to those skilled in the art can be used. Preferably, the preparation method of the perovskite active layer in this invention includes one or more of the following methods: two-step solution method, one-step anti-solvent method, evaporation method, roll-to-roll chemical vapor deposition, slot coating, and blade coating.
[0045] In this invention, the preferred material for the electron transport layer is tin dioxide, titanium dioxide, zinc oxide, or [6,6]-phenyl C. 61 The electron transport layer is composed of one or more of the following: methyl butyrate (PCBM), fullerene, zinc tin oxide, and graphene. When the electron transport layer is made of two or more of the above-mentioned materials, it is preferably layered between different materials. This invention does not impose any special limitation on the thickness of the electron transport layer; any thickness known to those skilled in the art can be used. This invention also does not impose any special limitation on the preparation method of the electron transport layer; any method known to those skilled in the art can be used. In embodiments of this invention, the electron transport layer is specifically prepared by evaporation or atomic deposition.
[0046] In this invention, the top electrode layer comprises a metal electrode and / or a carbon electrode. Preferably, the metal electrode is made of silver; preferably, the carbon electrode is made of graphene. This invention does not impose any particular limitation on the thickness of the top electrode layer; any thickness known to those skilled in the art can be used. This invention also does not impose any particular limitation on the preparation method of the top electrode layer; any method known to those skilled in the art can be used. In an embodiment of this invention, the top electrode layer is specifically prepared by sputtering.
[0047] The following detailed description of the perovskite device packaging method provided by the present invention, with reference to the embodiments, should not be construed as limiting the scope of protection of the present invention.
[0048] Example 1
[0049] The specific structure of a tandem solar cell (perovskite / silicon tandem solar cell) is as follows: Figure 3 As shown, from bottom to top, the structure includes a planar silicon bottom cell, an ITO transparent conductive layer, a PTAA hole transport layer, a perovskite active layer (made of lead perovskite), and an electron transport layer (C). 60 (including the SnO2 layer and the top electrode layer (IZO));
[0050] Methods for fabricating tandem solar cells:
[0051] An ITO transparent conductive layer is sputtered onto the upper surface of the silicon substrate cell, and a PTAA hole transport layer is spin-coated onto the surface of the ITO transparent conductive layer.
[0052] A lead-based inorganic solution was prepared by dissolving 1.13 mmol PbI2 and 0.17 mmol PbBr2 in a mixed solvent of 1 mL LDM:DMSO.
[0053] An organic salt solution was prepared by dissolving 0.34 mmol FAI, 0.09 mmol MACl, and 0.05 mmol MABr in 1 mL of isopropanol.
[0054] An inorganic layer was prepared by spin-coating 50 μL of lead-based inorganic solution at 2200 rpm and annealing it on a heating stage at 70 °C. Subsequently, 50 μL of the organic salt solution was spin-coated at 2500 rpm and annealed at 150 °C for 15 minutes in an air atmosphere with a humidity of 30% to 40% RH. After cooling to room temperature, a perovskite active layer (material is lead perovskite) was obtained.
[0055] C is sequentially evaporated on the surface of the perovskite active layer 60 A layer of SnO2 is atomically deposited to obtain an electron transport layer;
[0056] IZO is sputtered onto the surface of the electron transport layer to obtain a top electrode layer, thus obtaining the stacked solar cell;
[0057] Encapsulation method:
[0058] 0.157 g of methyl methacrylate and 3.14 mg of 2-methyl-2-acrylate-2-hydroxyethyl phosphate were mixed and then mixed with 4.72 mg of 2-hydroxy-2-methyl-1-phenylpropanone under dark conditions to obtain an encapsulation slurry.
[0059] After the encapsulation paste is coated on the surface of the perovskite device, it is covered with a glass plate and then photocured by irradiation under a 365nm ultraviolet lamp for 1 minute.
[0060] test:
[0061] At a standard solar intensity (AM1.5, 100mW / cm²) 2 Under irradiation, the photoelectric performance of unencapsulated tandem solar cells was tested, and the JV curve is shown below. Figure 4 As shown, by Figure 4 It can be seen that the open-circuit voltage of the unencapsulated tandem solar cell is 1.80V, the fill factor is 76.34%, and the short-circuit current density is 17.29mA / cm². 2 The photoelectric conversion efficiency is 23.76%.
[0062] At a standard solar intensity (AM1.5, 100mW / cm²) 2 Under irradiation, the photoelectric performance of the encapsulated tandem solar cell was tested, and the JV curve is shown below. Figure 4 As shown, by Figure 4 It can be seen that the open-circuit voltage of the encapsulated tandem solar cell is 1.81V, the fill factor is 76.81%, and the short-circuit current density is 18.06mA / cm². 2 The photoelectric conversion efficiency is 25.11%.
[0063] Example 2
[0064] The specific structure of a tandem solar cell (perovskite / silicon tandem solar cell) is as follows: Figure 3 As shown, from bottom to top, it includes a 1-2 micrometer fine silicon substrate, an ITO transparent conductive layer, a nickel oxide hole transport layer, and a perovskite active layer (material is Cs) stacked sequentially. 0.22 FA 0.78 Pb(I 0.85 Br 15 )3) Electron transport layer (C 60 (including the SnO2 layer and the top electrode layer (IZO));
[0065] Methods for fabricating tandem solar cells:
[0066] An ITO transparent conductive layer is sputtered onto the upper surface of the velour silicon substrate cell, and a nickel oxide hole transport layer is sputtered onto the surface of the ITO transparent conductive layer.
[0067] 80uL 1.8M Cs 0.22 FA 0.78 Pb(I 0.85 Br 15 )3 Solution was spin-coated onto the surface of the nickel oxide hole transport layer to obtain a perovskite active layer (material is Cs).0.22 FA 0.78 Pb(I 0.85 Br 15 )3);
[0068] C is sequentially evaporated on the surface of the perovskite active layer 60 A layer of SnO2 is atomically deposited to obtain an electron transport layer;
[0069] IZO is sputtered onto the surface of the electron transport layer to obtain a top electrode layer, thus obtaining the stacked solar cell;
[0070] Encapsulation method:
[0071] 0.157 g of methyl methacrylate and 7.81 mg of 2-methyl-2-acrylate-2-hydroxyethyl phosphate were mixed and then mixed with 9.42 mg of 2-hydroxy-2-methyl-1-phenylpropanone under dark conditions to obtain an encapsulation slurry.
[0072] After the encapsulation paste is coated on the surface of the perovskite device, it is covered with a glass plate and then photocured by irradiation under a 365nm ultraviolet lamp for 5 minutes.
[0073] test:
[0074] At a standard solar intensity (AM1.5, 100mW / cm²) 2 Under irradiation, the photoelectric performance of unencapsulated tandem solar cells was tested, and the JV curve is shown below. Figure 5 As shown, by Figure 5 It can be seen that the open-circuit voltage of the unencapsulated tandem solar cell is 1.78V, the fill factor is 75.17%, and the short-circuit current density is 17.53mA / cm². 2 The photoelectric conversion efficiency is 23.44%.
[0075] At a standard solar intensity (AM1.5, 100mW / cm²) 2 Under irradiation, the photoelectric performance of the encapsulated tandem solar cell was tested, and the JV curve is shown below. Figure 5 As shown, by Figure 5 It can be seen that the open-circuit voltage of the encapsulated tandem solar cell is 1.79V, the fill factor is 76.81%, and the short-circuit current density is 18.67mA / cm². 2 The photoelectric conversion efficiency is 25.26%.
[0076] Example 3
[0077] The specific structure of a tandem solar cell (perovskite / silicon tandem solar cell) is as follows: Figure 3As shown, from bottom to top, the structure includes a 3-5 micrometer high-texturation silicon bottom solar cell nc-Si:H(p), a Spiro-TTB hole transport layer, a perovskite active layer (made of lead perovskite), and an electron transport layer (C) stacked sequentially. 60 (including the SnO2 layer and the top electrode layer (IZO));
[0078] Methods for fabricating tandem solar cells:
[0079] A layer of nc-Si:H(p) is grown and deposited on the upper surface of a velvety silicon substrate cell using a PECVD method, and a Spiro-TTB hole transport layer is evaporated on the nc-Si:H(p) surface.
[0080] After sequentially evaporating PbI2, PbCl2 and PbBr2 layers on the surface of the Spiro-TTB hole transport layer, FAI and MABr were prepared by spin coating (spin coating speed of 3000 rpm) to obtain a perovskite active layer (material is lead perovskite).
[0081] C is sequentially evaporated on the surface of the perovskite active layer 60 A layer of SnO2 is atomically deposited to obtain an electron transport layer;
[0082] IZO is sputtered onto the surface of the electron transport layer to obtain a top electrode layer, thus obtaining the stacked solar cell;
[0083] Encapsulation method:
[0084] 0.157 g of methyl methacrylate and 0.012 g of 2-methyl-2-acrylate-2-hydroxyethyl phosphate were mixed and then mixed with 0.01 g of 2-hydroxy-2-methyl-1-phenylpropanone under dark conditions to obtain an encapsulation slurry.
[0085] After the encapsulation paste is coated on the surface of the perovskite device, it is covered with a glass plate and then photocured by irradiation under a 365nm ultraviolet lamp for 8 minutes.
[0086] test:
[0087] At a standard solar intensity (AM1.5, 100mW / cm²) 2 Under irradiation, the photoelectric performance of unencapsulated tandem solar cells was tested, and the JV curve is shown below. Figure 6 As shown, by Figure 6 It can be seen that the open-circuit voltage of the unencapsulated tandem solar cell is 1.79V, the fill factor is 77.67%, and the short-circuit current density is 18.08mA / cm². 2 The photoelectric conversion efficiency is 25.23%.
[0088] At a standard solar intensity (AM1.5, 100mW / cm²) 2 Under irradiation, the photoelectric performance of the encapsulated tandem solar cell was tested, and the JV curve is shown below. Figure 6 As shown, by Figure 6 It can be seen that the open-circuit voltage of the encapsulated tandem solar cell is 1.82V, the fill factor is 78.21%, and the short-circuit current density is 19.32mA / cm². 2 The photoelectric conversion efficiency is 27.52%.
[0089] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A method for packaging a perovskite device, characterized in that, Includes the following steps: Methyl methacrylate, 2-methyl-2-acrylate-2-hydroxyethyl phosphate, and 2-hydroxy-2-methyl-1-phenylpropanone were mixed to obtain an encapsulation paste. After the encapsulation paste is coated onto the surface of the perovskite device, it is covered with a glass plate and then photocured.
2. The packaging method as described in claim 1, characterized in that, The mass ratio of methyl methacrylate, 2-methyl-2-acrylate-2-hydroxyethyl phosphate, and 2-hydroxy-2-methyl-1-phenylpropanone is 100:(0~10):3; Furthermore, the content of the 2-methyl-2-acrylic acid-2-hydroxyethyl ester phosphate is not 0.
3. The packaging method as described in claim 1 or 2, characterized in that, The mixing process involves mixing methyl methacrylate and 2-methyl-2-acrylate-2-hydroxyethyl phosphate, followed by mixing with 2-hydroxy-2-methyl-1-phenylpropanone under dark conditions.
4. The packaging method as described in claim 1, characterized in that, The photocuring process uses ultraviolet light; the wavelength of the photocuring is 320–450 nm, and the time is 1–30 min.
5. The packaging method as described in claim 1, characterized in that, The perovskite device includes a perovskite solar cell or a tandem cell containing perovskite.
6. The packaging method as described in claim 5, characterized in that, The perovskite device comprises a bottom substrate, a bottom transparent conductive layer, a hole transport layer, a perovskite active layer, an electron transport layer, and a top electrode layer, which are stacked sequentially.
7. The packaging method as described in claim 6, characterized in that, The perovskite active layer is an ABX3 type perovskite semiconductor material, wherein A is one or more of alkylamines, alkylamidines and alkali elements, B is lead and tin, and X is one or more of iodine, bromine and chlorine.
8. The packaging method as described in claim 6, characterized in that, The underlying substrate is one or more of the following: transparent glass, flexible polyethylene terephthalate, flexible polyethylene terephthalate, silicon-based battery, copper indium gallium selenide-based battery, copper zinc tin sulfur-based battery, perovskite-based battery, and cadmium telluride-based battery. The bottom transparent conductive layer is one or more of the following: ITO transparent electrode, FTO transparent electrode, AZO transparent electrode, IGZO transparent electrode, graphene / oxide electrode, and oxide / metal / oxide multilayer composite transparent electrode; The top electrode layer includes a metal electrode and / or a carbon electrode.
9. The packaging method as described in claim 6, characterized in that, The hole transport layer is made of one or more of the following materials: poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetra(di-p-tolylamino)spiro-9,9', nickel oxide, fullerene derivatives, and self-limiting monolayers.
10. The packaging method as described in claim 6, characterized in that, The electron transport layer is made of tin dioxide, titanium dioxide, zinc oxide, or [6,6]-phenyl C. 61 -One or more of methyl butyrate, fullerene, zinc tin oxide and graphene.