A self-powered bidirectional optically controlled synaptic transistor and its application

Abstract

The present invention provides a self-powered optoelectronic synaptic transistor and its applications. The self-powered bidirectional optoelectronic synaptic transistor includes an artificial synaptic transistor, a perovskite solar cell I, and a perovskite solar cell II. The cathode of the perovskite solar cell I is connected to the gate electrode of the artificial synaptic transistor through a wire, and its anode is connected to the source electrode of the artificial synaptic transistor through a wire. The cathode of the perovskite solar cell II is connected to the source electrode of the artificial synaptic transistor through a wire, and its anode is connected to the other gate electrode of the artificial synaptic transistor through a wire. The present invention not only realizes the self-powered concept by connecting the perovskite solar cell to the gate electrode of the artificial synaptic transistor, but also realizes the positive and negative conductance effects on the artificial synaptic transistor by controlling the connection mode of the anode and cathode of the perovskite solar cell to the artificial synaptic transistor, thereby realizing the bidirectional regulation of neuromorphic behavior on the artificial synaptic transistor.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and particularly relates to a self-powered bidirectional optically controlled synaptic transistor and its application. Background Art

[0002] In recent years, with the increasing research on optoelectronic synaptic transistors, the research on positive and negative conductances has also been the direction that scientists have been working hard on. As for the current research, it is still a difficulty to achieve positive and negative conductance effects through light regulation. For various optoelectronic synapses, the conductance of the device can only be reversibly tuned through the combination of light and electrical signals, and this operation scheme greatly reduces the attractiveness of optoelectronic numerical control. For synaptic transistors, through the way of combining devices to achieve the regulation of the positive and negative conductances of the transistor by light, there has been no relevant report on such research so far. In addition, the self-powered effect can greatly reduce the power consumption of the system, but there is no synaptic transistor that combines the self-powered effect with the positive and negative conductance effects to realize a self-powered visual nervous system for the time being. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to overcome the above-mentioned deficiencies and defects in the background art, and provide a self-powered optically controlled synaptic transistor and its application, which not only realizes the self-powered concept by connecting a perovskite solar cell to the gate electrode of an artificial synaptic transistor, but also realizes the positive and negative conductance effects on the artificial synaptic transistor by controlling the connection mode of the anode and cathode of the perovskite solar cell to the artificial synaptic transistor, thereby realizing the bidirectional regulation of neuromorphic behavior on the artificial synaptic transistor.

[0004] To solve the above technical problem, the technical solution proposed by the present invention is as follows:

[0005] A self-powered bidirectional optically controlled synaptic transistor includes an artificial synaptic transistor, a first perovskite solar cell, and a second perovskite solar cell; the cathode of the first perovskite solar cell is connected to the gate electrode of the artificial synaptic transistor through a wire, and its anode is connected to the source electrode of the artificial synaptic transistor through a wire; the cathode of the second perovskite solar cell is connected to the source electrode of the artificial synaptic transistor through a wire, and its anode is connected to the other gate electrode of the artificial synaptic transistor through a wire.

[0006] The present invention combines an artificial synaptic transistor and two perovskite solar cells to form an artificial visual perception device composed of a perovskite solar cell and a synaptic transistor. By irradiating light on the perovskite solar cell, a voltage is generated, which drives a current to be generated in the channel of the artificial synaptic transistor. This connection mode replaces the function of an externally applied voltage, and greatly reduces the power consumption of the artificial visual perception system through a self-driven method. By combining and constructing the perovskite solar cell and the synaptic device, a self-powered visual perception system is realized.

[0007] Preferably, the artificial synaptic transistor is a three-terminal synaptic transistor, which includes a glass substrate, a source electrode, a drain electrode, a plurality of gate electrodes and a semiconductor layer formed on the glass substrate; the source electrode and the drain electrode are connected to the semiconductor layer, and the plurality of gate electrodes are connected to the semiconductor layer through a dielectric layer; the semiconductor layer is indium oxide; the gate electrode, the source electrode and the drain electrode are all aluminum electrodes; and the dielectric layer is an ion gel.

[0008] Preferably, the method for preparing the artificial synaptic transistor comprises the following steps:

[0009] 1) Depositing a semiconductor layer on a glass substrate by magnetron sputtering;

[0010] 2) Then, a source electrode, a drain electrode and a gate electrode are deposited on the glass substrate outside the semiconductor layer by vacuum evaporation;

[0011] 3) Finally, the ion gel precursor solution is continuously covered on the semiconductor layer, part of the glass substrate and part of the gate electrode by screen printing, and a dielectric layer is formed after drying, so that the plurality of gate electrodes are connected to the semiconductor layer through the dielectric layer.

[0012] In the present invention, an artificial synaptic transistor is prepared using an indium oxide film and ion gel technology. Based on an ion gel electrolyte as a gate dielectric layer, ions in the electrolyte can move and accumulate on the interface between the semiconductor and the electrolyte under the action of an external electric field, thereby forming a double electric layer with high capacitance at the interface. The huge double electric layer capacitance of the ion gel electrolyte can not only effectively realize the ultra-low voltage operation of the device, but also use the relaxation caused by ion movement to simulate synaptic plasticity, showing great potential in synaptic simulation. For an artificial synaptic transistor using indium oxide as a semiconductor layer (i.e., a channel layer), it has the advantages of low cost, simple preparation process, large-area deposition by a magnetron sputtering method at room temperature, uniform film formation, etc., and is currently a preferred device for visual neuromorphic systems.

[0013] Preferably, step 1) specifically comprises the following steps: wiping and cleaning the glass substrate to be cleaned in alcohol with a cotton swab, then ultrasonically cleaning with acetone, deionized water and isopropanol for 20 minutes respectively, and then drying with nitrogen for standby use; using indium oxide as a target material, depositing it on the glass substrate by magnetron sputtering to form a semiconductor layer, and introducing argon and oxygen during the magnetron sputtering process, and the volume flow ratio of argon and oxygen is 40:(4-6);

[0014] Step 2) specifically includes the following steps: Using a mask technique, source electrodes, drain electrodes, and gate electrodes are evaporated on a glass substrate outside the semiconductor layer in a high-vacuum coating instrument by thermal evaporation; and ohmic contacts are formed between the source electrodes, drain electrodes and the semiconductor layer; wherein the vacuum degree is lower than 8×10 -4 Pa.

[0015] Preferably, in step 3), the preparation method of the ionic gel precursor solution includes the following steps: mixing a high molecular polymer, an ionic liquid, and acetone according to a mass ratio of 1:4:(6-7), stirring and heating at 60-70 °C for 6-8 hours, and the rotation speed is 600-1500 revolutions / min to obtain an ionic gel precursor solution;

[0016] The high molecular polymer is any one or more of poly(vinylidene fluoride-co-hexafluoropropylene) P(VDF-HFP), polyvinylpyrrolidone (PVP), polyvinyl alcohol resin (PVA), polymethyl methacrylate (PMMA), and polystyrene (PS).

[0017] Preferably, the perovskite solar cell I and the perovskite solar cell II each sequentially include an ITO electrode, an SnO2 electron transport layer, a perovskite cell active layer, a P-type Sprio hole transport layer, and an Ag electrode from bottom to top; wires are led out at both the ITO electrode and the Ag electrode, the ITO electrode serves as the cathode of the perovskite solar cell, and the Ag electrode serves as the anode of the perovskite solar cell.

[0018] The perovskite cell active layer of the perovskite solar cell is sensitive to light of certain wavelengths. When the perovskite solar cell is under illumination, electron-hole pairs in the active layer are generated and separated. Through the action of the SnO2 electron transport layer and the P-type Sprio hole transport layer, a voltage is finally generated between the anode and cathode. The perovskite solar cell of the present invention has good photoelectric conversion efficiency.

[0019] As a general inventive concept, the present invention provides an application of a self-powered bidirectional optoelectronic synaptic transistor. The self-powered optoelectronic synaptic transistor is applied to realize optoelectronic positive and negative conductance effects, specifically including the following steps:

[0020] 1) Prepare the above self-powered bidirectional optoelectronic synaptic transistor;

[0021] 2) Separate illumination is applied to the perovskite solar cell I and the perovskite solar cell II to regulate the artificial synaptic transistor; wherein, applying illumination to the perovskite solar cell I generates a negative regulation of the conductance of the artificial synaptic transistor, and applying illumination to the perovskite solar cell II generates a positive regulation of the conductance of the artificial synaptic transistor, thereby realizing the regulation of the positive and negative conductance of the artificial synaptic transistor and simulating different neural synaptic behaviors.

[0022] Preferably, the gate electrode and the source electrode of the artificial synaptic transistor serve as signal input terminals, and the source-drain current of the artificial synaptic transistor serves as a signal output terminal; the input signal received by the signal input terminal is the voltage generated between the cathode and the anode of the perovskite solar cell, and the output signal of the signal output terminal is the channel current between the source electrode and the drain electrode.

[0023] Preferably, in step 2), after light is applied to the first perovskite solar cell, a voltage is generated between the cathode and the anode of the first perovskite solar cell, which will affect the charges at the interface of the semiconductor layer of the artificial synaptic transistor and cause the channel current to decrease. On the electrical transfer curve of the artificial synaptic transistor, it shows a decrease in current and the transfer curve moves to the left; on the pulse curve, it shows that the postsynaptic current decreases with the generation of light; this results in a negative regulation of the conductance of the artificial synaptic transistor.

[0024] After light is applied to the second perovskite solar cell, a voltage is generated between the cathode and the anode of the second perovskite solar cell, which will affect the charges at the interface of the semiconductor layer of the artificial synaptic transistor. At this time, the channel current will increase. On the electrical transfer curve of the artificial synaptic transistor, it shows an increase in current and the transfer curve moves to the right; on the pulse curve, it shows that the postsynaptic current increases with the generation of light; this results in a positive regulation of the conductance of the artificial synaptic transistor.

[0025] In the present invention, the perovskite solar cell is highly sensitive to light. By irradiating the perovskite solar cell with light of different wavelengths and intensities, a voltage will be generated across the electrodes (Ag electrode and ITO electrode) of the perovskite solar cell. For light of different wavelengths and illumination intensities applied, the perovskite solar cell has different light absorption intensities, and the magnitudes of the generated voltages are also different. Then, the generated voltage is transmitted as a signal input terminal to the gate of the artificial synaptic transistor, causing the transfer curve of the transistor to drift, indicating that the opto-controlled synaptic transistor composed of the artificial synaptic transistor and the perovskite solar cell has a certain response to light. The gate electrode of the artificial synaptic transistor is connected to different electrodes of the perovskite solar cell through wires, and different conductance effects can be realized on one synaptic transistor.

[0026] In the present invention, an artificial visual perception system is realized by combining a perovskite solar cell with an artificial synaptic transistor. For an artificial synaptic device with a double-layer electric layer, the driving voltage of the transistor is small, and the voltage generated by the perovskite cell can drive the synaptic transistor to work at about 1V, which can greatly reduce the power consumption of the artificial visual perception system. By applying a light pulse to the perovskite solar cell, the light pulse signal is converted into an electrical pulse signal, which acts on the synaptic transistor to achieve synaptic plasticity. By different connection methods between the cathode and anode of the perovskite cell and the synaptic transistor, long-term potentiation and long-term depression of synapses are realized.

[0027] Preferably, the synaptic behavior includes synaptic potentiation and synaptic inhibition; the synaptic potentiation and synaptic inhibition are manifested as excitatory postsynaptic current (EPSC) and inhibitory postsynaptic current (IPSC).

[0028] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0029] (1) The present invention connects an artificial synaptic transistor with a perovskite solar cell, generates a voltage on the perovskite solar cell through light illumination, regulates the channel current of the transistor, realizes positive and negative conductance effects on the transistor, provides a new method for realizing positive and negative photoconductance, and is beneficial to further constructing a visual perception system.

[0030] (2) The present invention realizes the simulation of different synaptic behaviors on the synaptic transistor, realizes the effects of synaptic potentiation and synaptic inhibition, and realizes the bidirectional regulation of nerve synapses on the transistor by different connection methods between the anode and cathode of the perovskite solar cell and the gate electrode of the synaptic transistor.

[0031] (3) The combined device formed by the combination of the perovskite solar cell and the synaptic transistor in the present invention provides a new hardware platform for realizing the visual nervous system.

[0032] (4) The present invention solves the problem of high power consumption existing in the visual perception system by the action of light on the perovskite solar cell. Description of the Drawings

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0034] Figure 1 It is a schematic structural diagram of a self-powered bidirectional light-controlled synaptic transistor;

[0035] Figure 2 It is a schematic structural diagram of an artificial synaptic transistor;

[0036] Figure 3 It is a schematic structural diagram of a perovskite solar cell;

[0037] Figure 4 It is a combined circuit diagram of a self-powered bidirectional light-controlled synaptic transistor;

[0038] Figure 5 It is an EPSC and IPSC diagram of a self-powered bidirectional light-controlled synaptic transistor.

[0039] Legend Explanation:

[0040] 1. Artificial synaptic transistor; 11. Glass substrate; 12. Source electrode; 13. Gate electrode; 14. Drain electrode; 15. Dielectric layer; 16. Semiconductor layer; 2a. Perovskite solar cell one; 2b. Perovskite solar cell two; 21. ITO electrode; 22. SnO2 electron transport layer; 23. Perovskite cell active layer; 24. P-type Sprio hole transport layer; 25. Ag electrode. Detailed Implementation Modes

[0041] To facilitate the understanding of the present invention, the following will describe the present invention more comprehensively and meticulously in combination with the accompanying drawings of the specification and preferred embodiments, but the protection scope of the present invention is not limited to the following specific embodiments.

[0042] Unless otherwise defined, all the technical terms used hereinafter have the same meaning as commonly understood by those skilled in the art. The technical terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the protection scope of the present invention.

[0043] Unless otherwise specifically stated, all kinds of raw materials, reagents, instruments, and equipment used in the present invention can be obtained through the market or can be prepared by existing methods.

[0044] Example 1:

[0045] As Figures 1-3 shown, a self-powered bidirectional light-controlled synaptic transistor includes an artificial synaptic transistor 1, a perovskite solar cell one 2a, and a perovskite solar cell two 2b; the cathode of the perovskite solar cell one 2a is connected to the gate electrode 13 of the artificial synaptic transistor 1 through a wire, and its anode is connected to the source electrode 12 of the artificial synaptic transistor 1 through a wire; the cathode of the perovskite solar cell two 2b is connected to the source electrode 12 of the artificial synaptic transistor 1 through a wire, and its anode is connected to the other gate electrode 13 of the artificial synaptic transistor 1 through a wire.

[0046] The above artificial synaptic transistor 1 is a three-terminal synaptic transistor. The artificial synaptic transistor 1 includes a glass substrate 11, a source electrode 12, a drain electrode 14, multiple gate electrodes 13, and a semiconductor layer 16 formed on the glass substrate 11; the source electrode 12 and the drain electrode 14 are connected to the semiconductor layer 16, and the multiple gate electrodes 13 are connected to the semiconductor layer 16 through a dielectric layer 15; the semiconductor layer 16 is indium oxide; the gate electrode 13, the source electrode 12, and the drain electrode 14 are all aluminum electrodes; the dielectric layer 15 is an ionic gel.

[0047] The preparation method of the artificial synaptic transistor includes the following steps:

[0048] 1) Wipe and clean the glass substrate to be cleaned with a cotton swab in alcohol, then ultrasonically clean it with acetone, deionized water, and isopropanol for 20 minutes respectively, and then dry it with nitrogen for standby; Use indium oxide as the target, and deposit it on the glass substrate 11 by magnetron sputtering to form a semiconductor layer 16. Argon and oxygen are introduced during the magnetron sputtering process, and the volume flow ratio of argon to oxygen is 40:4.

[0049] 2) Using the mask technology, evaporate the source electrode 12, drain electrode 14, and gate electrode 13 on the glass substrate 11 outside the semiconductor layer 16 by thermal evaporation in a high-vacuum coating instrument; And make the source electrode 12 and drain electrode 14 form an ohmic contact with the semiconductor layer 16; Among them, the vacuum degree is lower than 8×10 -4 Pa.

[0050] 3) Finally, use the screen printing method to continuously cover the ion gel precursor solution on the semiconductor layer 16 (the semiconductor layer 16 is completely covered), part of the glass substrate 11, and part of the gate electrode 13 (the part of the gate electrode 13 close to the semiconductor layer 16). After drying, a dielectric layer 15 (ion gel) is formed, so that multiple gate electrodes 13 are connected to the semiconductor layer 16 through the dielectric layer 15.

[0051] The preparation method of the ion gel precursor solution includes the following steps: Mix vinylidene fluoride - co - hexafluoropropylene, ionic liquid, and acetone in a mass ratio of 1:4:6, stir and heat at 60 °C for 8 hours, and the rotation speed is 1500 r / min to obtain the ion gel precursor solution.

[0052] The structures of the above perovskite solar cell - 2a and perovskite solar cell - 2b are the same, and they both include an ITO electrode 21, an SnO2 electron transport layer 22, a perovskite cell active layer 23, a P - type Sprio hole transport layer 24, and an Ag electrode 25 from bottom to top in sequence; Wires are led out at both the ITO electrode 21 and the Ag electrode 25. The ITO electrode 21 serves as the cathode of the above perovskite solar cell, and the Ag electrode 25 serves as the anode of the above perovskite solar cell. Wires are led out at both the ITO electrode 21 and the Ag electrode 25.

[0053] The preparation method of the perovskite solar cell includes the following steps:

[0054] 1) Prepare an ITO glass substrate as the ITO electrode 21;

[0055] 2) Spin - coat the SnO2 electron transport layer material on the ITO glass substrate;

[0056] 3) Spin - coat the perovskite cell active layer material on the SnO2 electron transport layer;

[0057] 4) Spin - coat the P - type Sprio hole transport layer material on the perovskite cell active layer;

[0058] 5) Then, an Ag electrode is vacuum-evaporated on the P-type Sprio hole transport layer;

[0059] 6) After the evaporation is completed, the excess perovskite, SnO2 and other substances are scraped off with a knife to expose a part of the ITO electrode 21;

[0060] 7) Then, the fabricated device is subjected to oxidation treatment. The oxidation treatment can be specifically carried out in a 20% moisture-proof box for 14 - 70 h.

[0061] Example 2:

[0062] An application of a self-powered bidirectional optically controlled synaptic transistor, a method for realizing the positive and negative conductance effects of the optically controlled synaptic transistor, specifically comprising the following steps:

[0063] 1) Prepare the self-powered bidirectional optically controlled synaptic transistor in Example 1 (as Figure 1 shown);

[0064] 2) Illuminate the perovskite solar cell one 2a and the perovskite solar cell two 2b separately. The light source can be a 520 nm LED lamp, and the light power density is 40 mW / cm 2 , under this condition, photoelectric conversion is realized, and the voltage generated by the perovskite solar cell is used to replace the externally applied voltage to regulate the artificial synaptic transistor 1, realizing self-power supply; among them, illuminating the perovskite solar cell one 2a generates a negative regulation of the conductance of the artificial synaptic transistor 1, and illuminating the perovskite solar cell two 2b generates a positive regulation of the conductance of the artificial synaptic transistor 1, thereby realizing the regulation of the positive and negative conductance of the artificial synaptic transistor 1 and simulating the synaptic plasticity behavior at different times. The synaptic behavior includes synaptic potentiation and synaptic depression; synaptic potentiation and synaptic depression are manifested as excitatory postsynaptic current EPSC and inhibitory postsynaptic current IPSC.

[0065] In the above self-powered bidirectional optically controlled synaptic transistor, the gate electrode 13 and the source electrode 12 of the artificial synaptic transistor 1 are used as signal input terminals, and the source-drain current of the artificial synaptic transistor 1 is used as the signal output terminal; the input signal received by the signal input terminal is the voltage generated between the cathode and the anode of the perovskite solar cell, and the output signal of the signal output terminal is the channel current between the source electrode 12 and the drain electrode 14.

[0066] After irradiating the perovskite solar cell - 2a with light, a voltage is generated between the cathode and anode of the perovskite solar cell - 2a, which will affect the charges at the interface of the semiconductor layer 16 of the artificial synaptic transistor 1 and cause the channel current to decrease. This is manifested as a decrease in current and a leftward shift of the transfer curve on the electrical transfer curve of the artificial synaptic transistor 1; on the pulse curve, it is manifested as a decrease in the postsynaptic current with the generation of light; a negative regulation of the conductance of the artificial synaptic transistor is generated.

[0067] After irradiating the perovskite solar cell - 2b with light, a voltage is generated between the cathode and anode of the perovskite solar cell - 2b, which will affect the charges at the interface of the semiconductor layer 16 of the artificial synaptic transistor 1. At this time, the channel current will increase, which is manifested as an increase in current and a rightward shift of the transfer curve on the electrical transfer curve of the artificial synaptic transistor 1; on the pulse curve, it is manifested as an increase in the postsynaptic current with the generation of light; a positive regulation of the conductance of the artificial synaptic transistor is generated.

[0068] The combined circuit diagram of the self - powered bidirectional light - controlled synaptic transistor is as Figure 4 shown. Figure 5 It is the EPSC diagram of the self - powered bidirectional light - controlled synaptic transistor. Figure 5 It respectively shows the positive and negative conductance effects generated on the artificial synaptic transistor 1 when the artificial synaptic transistor 1 and the perovskite solar cell are connected in different ways and the solar cell is irradiated with different light - illumination durations. It can be seen from the figure that under different light - illumination durations, the generated postsynaptic current increases with the increase of the light - illumination duration. For the forward connection of the perovskite solar cell and the artificial synaptic transistor 1, the generated synaptic current increases with the increase of the light - illumination duration, and the enhancement effect becomes stronger and stronger. For the negative connection of the perovskite solar cell and the artificial synaptic transistor 1, the generated synaptic current decreases with the increase of the light - intensity duration, and the inhibition effect becomes stronger and stronger.

Claims

1. A self-powered bidirectional optically controlled synaptic transistor, characterized in that It includes an artificial synaptic transistor (1), a perovskite solar cell I (2a), and a perovskite solar cell II (2b); the cathode of the perovskite solar cell I (2a) is connected to the gate electrode (13) of the artificial synaptic transistor (1) through a wire, and its anode is connected to the source electrode (12) of the artificial synaptic transistor (1) through a wire; the cathode of the perovskite solar cell II (2b) is connected to the source electrode (12) of the artificial synaptic transistor (1) through a wire, and its anode is connected to another gate electrode (13) of the artificial synaptic transistor (1) through a wire.

2. The self-powered bidirectional optically controlled synaptic transistor according to claim 1, wherein The artificial synaptic transistor (1) is a three-terminal synaptic transistor, and the artificial synaptic transistor (1) includes a glass substrate (11), a source electrode (12), a drain electrode (14), a plurality of gate electrodes (13), and a semiconductor layer (16) formed on the glass substrate (11); the source electrode (12) and the drain electrode (14) are connected to the semiconductor layer (16), and the plurality of gate electrodes (13) are connected to the semiconductor layer (16) through a dielectric layer (15); the semiconductor layer (16) is indium oxide; the gate electrode (13), the source electrode (12), and the drain electrode (14) are all aluminum electrodes; the dielectric layer (15) is an ionic gel.

3. The self-powered bidirectional optically controlled synaptic transistor according to claim 2, characterized in that, The preparation method of the artificial synaptic transistor (1) includes the following steps: 1) Deposit the semiconductor layer (16) on the glass substrate (11) by magnetron sputtering. 2) Then deposit the source electrode (12), the drain electrode (14), and the gate electrode (13) on the glass substrate (11) outside the semiconductor layer (16) by vacuum evaporation. 3) Finally, continuously cover the semiconductor layer (16), a part of the glass substrate (11), and a part of the gate electrode (13) with the ionic gel precursor solution by screen printing, and form the dielectric layer (15) after drying, so that the plurality of gate electrodes (13) are connected to the semiconductor layer (16) through the dielectric layer (15).

4. The self-powered bidirectional opto-controlled synaptic transistor according to claim 3, wherein Step 1) specifically includes the following steps: Wipe and clean the glass substrate (11) to be cleaned with a cotton swab in alcohol, then ultrasonically clean it with acetone, deionized water, and isopropyl alcohol respectively, and then dry it with nitrogen for standby; use indium oxide as the target, and deposit it on the glass substrate (11) by magnetron sputtering to form the semiconductor layer (16). During the magnetron sputtering process, argon and oxygen are introduced, and the volume flow ratio of argon to oxygen is 40:(4 - 6). Step 2) specifically includes the following steps: Using a mask technique, in a high-vacuum coating instrument, source electrode (12), drain electrode (14), and gate electrode (13) are evaporated onto the glass substrate (11) outside the semiconductor layer (16) by thermal evaporation; and an ohmic contact is formed between the source electrode (12), drain electrode (14) and the semiconductor layer (16); wherein the vacuum degree is lower than 8×10 -4 Pa.

5. The self-powered bidirectional optically controlled synaptic transistor according to claim 3, wherein In step 3), the preparation method of the ionic gel precursor solution includes the following steps: Mix a polymer, an ionic liquid, and acetone in a mass ratio of 1:4:(6 - 7), stir and heat at 60 - 70 °C for 6 - 8 hours, and the rotation speed is 600 - 1500 revolutions / min to obtain the ionic gel precursor solution; the polymer is any one or more of poly(vinylidene fluoride - co - hexafluoropropylene), polyvinylpyrrolidone, polyvinyl alcohol resin, polymethyl methacrylate, and polystyrene.

6. The self-powered bidirectional optoelectronic synaptic transistor according to any one of claims 1-5, characterized in that, The perovskite solar cell I (2a) and the perovskite solar cell II (2b) each sequentially include an ITO electrode (21), an SnO2 electron transport layer (22), a perovskite cell active layer (23), a P-type Sprio hole transport layer (24), and an Ag electrode (25) from bottom to top; wires are led out at both the ITO electrode (21) and the Ag electrode (25), the ITO electrode (21) serves as the cathode of the perovskite solar cell, and the Ag electrode (25) serves as the anode of the perovskite solar cell.

7. Application of a self-powered bidirectional optically controlled synaptic transistor as described in any one of claims 1-6, characterized in that, It includes the following steps: 1) Prepare the self-powered bidirectional light-controlled synaptic transistor; 2) Separately irradiate the perovskite solar cell I (2a) and the perovskite solar cell II (2b) with light to regulate the artificial synaptic transistor (1); among them, irradiating the perovskite solar cell I (2a) with light generates a negative regulation of the conductance of the artificial synaptic transistor (1), and irradiating the perovskite solar cell II (2b) with light generates a positive regulation of the conductance of the artificial synaptic transistor (1), thereby realizing the regulation of the positive and negative conductances of the artificial synaptic transistor (1) and simulating different neural synaptic behaviors.

8. The application according to claim 7, wherein The gate electrode (13) and the source electrode (12) of the artificial synaptic transistor (1) serve as signal input terminals, and the source-drain current of the artificial synaptic transistor (1) is the signal output terminal; the input signal received by the signal input terminal is the voltage generated between the cathode and the anode of the perovskite solar cell, and the output signal of the signal output terminal is the channel current between the source electrode (12) and the drain electrode (14).

9. The application according to claim 8, characterized in that In step 2), after irradiating the perovskite solar cell I (2a) with light, a voltage is generated between the cathode and the anode of the perovskite solar cell I (2a), which affects the charges at the interface of the semiconductor layer (16) of the artificial synaptic transistor (1), and causes the channel current to decrease, showing a decrease in current and a left shift of the transfer curve on the electrical transfer curve of the artificial synaptic transistor (1); generating a negative regulation of the conductance of the artificial synaptic transistor (1); After irradiating the perovskite solar cell II (2b) with light, a voltage is generated between the cathode and the anode of the perovskite solar cell II (2b), which affects the charges at the interface of the semiconductor layer (16) of the artificial synaptic transistor (1), and at this time the channel current increases, showing an increase in current and a right shift of the transfer curve on the electrical transfer curve of the artificial synaptic transistor (1); generating a positive regulation of the conductance of the artificial synaptic transistor (1).

10. The application according to claim 8, characterized in that The synaptic behaviors include synaptic potentiation and synaptic depression; the synaptic potentiation and synaptic depression are manifested as excitatory postsynaptic current and inhibitory postsynaptic current.

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