Method, system, readable storage medium and computer for setting dicing power

Abstract

The present invention provides a method, system, readable storage medium and computer for setting the scribing power, the method comprising: irradiating a preset irradiation position of a wafer to be processed along a predetermined direction by a laser transmitter, and determining the reflectivity of the wafer to be processed based on the reflection information reflected by the wafer to be processed; converting the reflectivity into a voltage signal, and judging whether the voltage signal meets the preset voltage threshold; if the voltage signal does not meet the preset voltage threshold, obtaining the initial power of the wafer to be processed, and calculating the power compensation value of the wafer to be processed based on the voltage signal; and setting the scribing power of the wafer to be processed using the power compensation value and the initial power. The present invention converts the reflectivity into a corresponding voltage signal, and determines the power compensation value corresponding to the wafer to be processed according to the voltage signal, so as to avoid the phenomenon that the wafer is damaged due to abnormal reflectivity during cutting, which causes the laser scribing to fail to cut.

Description

Technical Field

[0001] The present invention relates to the field of laser processing technology, and in particular to a method, system, readable storage medium and computer for setting scribing power. Background Art

[0002] With the rapid development of the semiconductor industry and the improvement of people's living standards, light emitting diodes, as a solid-state semiconductor diode light-emitting device, are widely used in lighting fields such as indicator lights and display screens.

[0003] LED chips are an indispensable part of light-emitting diodes. Currently, laser scribers are used to cut LED chips. Sapphire is cut using a laser with a fixed wavelength. To increase the brightness of the chip, a metal layer is plated on the back of the sapphire after grinding and before cutting. This is called a Bragg reflector in Chinese and distributed Braggreflection in English, or DBR, to increase the brightness. The laser scriber then penetrates the DBR coating to form a blast point inside the sapphire substrate, and then blasts the front and back of the wafer to complete the cutting.

[0004] The existing laser scribers have fixed cutting power parameter settings for each type of wafer, and the laser emission wavelength is fixed at 1064nm. Under normal circumstances, the reflectivity of the DBR layer at a wavelength of 1064nm is between 10% and 15%. The reflectivity in this range can ensure that the set power is sufficient to scribe the wafer, and there will be no appearance and electrical yield problems. When the reflectivity of the incoming DBR layer is abnormal, the scriber cannot monitor its reflectivity. When the reflectivity is greater than 15%, the set laser power will not be sufficient to scribe the wafer, and scribe is irreversible. Failure to scribe the wafer will directly lead to product scrapping, resulting in serious losses. Summary of the invention

[0005] Based on this, the object of the present invention is to provide a dicing power setting method, system, readable storage medium and computer to at least solve the deficiencies in the above-mentioned related technologies.

[0006] The present invention provides a method for setting a dicing power, comprising:

[0007] Irradiating a preset irradiation position of a wafer to be processed along a predetermined direction by a laser emitter, and determining the reflectivity of the wafer to be processed based on reflection information reflected by the wafer to be processed;

[0008] Converting the reflectivity into a voltage signal, and determining whether the voltage signal meets a preset voltage threshold;

[0009] If the voltage signal does not meet the preset voltage threshold, the initial power of the wafer to be processed is acquired, and a power compensation value of the wafer to be processed is calculated based on the voltage signal;

[0010] The power compensation value and the initial power are used to set the dicing power of the wafer to be processed.

[0011] Furthermore, before the step of calculating the power compensation value of the wafer to be processed based on the voltage signal, the method further includes:

[0012] Using a laser emitter to irradiate preset irradiation positions of a plurality of standard wafers along a predetermined direction, and determining the reflectivity of each standard wafer based on reflection information reflected by each standard wafer;

[0013] Converting the reflectivity of each standard wafer into a voltage signal, and calculating the power compensation value of each standard wafer based on the voltage signal of each standard wafer;

[0014] A mapping relationship is established according to the power compensation value of each standard wafer and the voltage signal of each standard wafer to obtain a compensation value mapping table.

[0015] Further, the step of calculating the power compensation value of the wafer to be processed based on the voltage signal includes:

[0016] Inputting the voltage signal into the compensation value mapping table to obtain a voltage difference between the voltage signal and the compensation value mapping table;

[0017] A power compensation value corresponding to the voltage signal is determined based on the voltage difference and the compensation value mapping table.

[0018] Furthermore, after the step of setting the scribing power of the wafer to be processed by using the power compensation value and the initial power, the method further includes:

[0019] Performing power compensation on the initial power using the power compensation value, and determining whether the initial power after power compensation meets the scribing power requirement;

[0020] If the initial power after power compensation meets the scribing power requirement, the initial power after power compensation is used as the scribing power.

[0021] Further, after the step of determining the reflectivity of the wafer to be processed based on the reflection information reflected by the wafer to be processed, the method further includes:

[0022] Determining whether the reflectivity meets a reflectivity threshold range;

[0023] When the reflectivity does not meet the reflectivity threshold, an alarm message is issued and the wafer to be processed is marked as an abnormal wafer.

[0024] The present invention also provides a dicing power setting system, comprising:

[0025] A reflectivity acquisition module, used to irradiate a preset irradiation position of a wafer to be processed along a predetermined direction through a laser transmitter, and determine the reflectivity of the wafer to be processed based on reflection information reflected by the wafer to be processed;

[0026] A data conversion module, used to convert the reflectivity into a voltage signal and determine whether the voltage signal meets a preset voltage threshold;

[0027] A power compensation value calculation module, used for obtaining the initial power of the wafer to be processed if the voltage signal does not meet the preset voltage threshold, and calculating the power compensation value of the wafer to be processed based on the voltage signal;

[0028] The scribing power determination module is used to set the scribing power of the wafer to be processed by using the power compensation value and the initial power.

[0029] Furthermore, the system also includes:

[0030] A standard reflectivity acquisition module, used to irradiate preset irradiation positions of a plurality of standard wafers respectively along a predetermined direction through a laser transmitter, and determine the reflectivity of each standard wafer based on reflection information reflected by each standard wafer;

[0031] A standard power compensation value calculation module, used for converting the reflectivity of each standard wafer into a voltage signal, and calculating the power compensation value of each standard wafer based on the voltage signal of each standard wafer;

[0032] The compensation value mapping table construction module is used to construct a mapping relationship according to the power compensation value of each standard wafer and the voltage signal of each standard wafer to obtain a compensation value mapping table.

[0033] Furthermore, the power compensation value calculation module includes:

[0034] a voltage difference calculation unit, configured to input the voltage signal into the compensation value mapping table to obtain a voltage difference between the voltage signal and the compensation value mapping table;

[0035] A power compensation value calculation unit is used to determine the power compensation value corresponding to the voltage signal based on the voltage difference value and the compensation value mapping table.

[0036] Furthermore, the system also includes:

[0037] A power determination module, used to perform power compensation on the initial power using the power compensation value, and determine whether the initial power after power compensation meets the dicing power requirement;

[0038] The dicing power verification module is used to use the initial power after power compensation as the dicing power if the initial power after power compensation meets the dicing power requirement.

[0039] Furthermore, the system also includes:

[0040] A reflectivity judgment module, used to judge whether the reflectivity meets the reflectivity threshold range;

[0041] The alarm module is used to issue an alarm message when the reflectivity does not meet the reflectivity threshold and mark the wafer to be processed as an abnormal wafer.

[0042] The present invention also provides a readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the above-mentioned dicing power setting method is implemented.

[0043] The present invention also proposes a computer, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the above-mentioned dicing power setting method when executing the computer program.

[0044] Compared with the prior art, the beneficial effects of the present invention are: determining the reflectivity of the wafer to be processed through reflection information, and converting the reflectivity into a corresponding voltage signal, determining the power compensation value corresponding to the wafer to be processed according to the voltage signal, and finding the corresponding power compensation value through the reflectivity in time before cutting to avoid the phenomenon that the laser scribing cannot be cut due to abnormal reflectivity during cutting and causes damage to the wafer; by optimizing the scribing power, the scribing effect of laser scribing is improved to avoid the scrapping of wafer scribing. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 Flow chart of the method for setting the scribing power in the first embodiment of the present invention;

[0046] Figure 2 This is a schematic diagram of the reflectivity measurement principle in the first embodiment of the present invention;

[0047] Figure 3 for Figure 1 Detailed flow chart of step S103;

[0048] Figure 4 Flow chart of a method for setting dicing power in a second embodiment of the present invention;

[0049] Figure 5It is a structural block diagram of a dicing power setting system in a third embodiment of the present invention;

[0050] Figure 6 FIG. 4 is a structural block diagram of a computer in a fourth embodiment of the present invention.

[0051] The following specific implementation manner will further illustrate the present invention in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0052] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0053] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0054] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0055] Embodiment 1

[0056] See also Figure 1 , which shows a method for setting dicing power in a first embodiment of the present invention, and the method specifically includes steps S101 to S105:

[0057] S101, irradiating a preset irradiation position of a wafer to be processed along a predetermined direction by a laser transmitter, and determining the reflectivity of the wafer to be processed based on reflection information reflected by the wafer to be processed;

[0058] In specific implementation, the scribing power setting method in this embodiment is applied to a laser scribing machine, which is equipped with a reflectivity tester. When the laser scribing machine loads the wafer to be processed to the wide angle, the laser emitter on the reflectivity tester will emit a light beam with a wavelength of 1064nm and irradiate the DBR coating on the back of the wafer to be processed in a predetermined direction (in this embodiment, the predetermined direction is vertical, and in other embodiments, the predetermined direction can also be an acute angle or an obtuse angle). At this time, the DBR coating on the back of the wafer to be processed will reflect the light beam and transmit it through the reflective optical fiber. The reflectivity tester will calculate the reflectivity of the wafer to be processed based on the reflection information.

[0059] Please refer to 2, which shows a schematic diagram of the reflectivity measurement principle, as follows:

[0060] In this embodiment, the specular reflectance is measured in two ways: relative and absolute. In the relative reflectance measurement, a reference sample is placed in the optical path for baseline correction, and then replaced with the sample to be measured to measure the reflectance. In this way, the relative reflectance relative to the reference sample (assuming the reflectance is 100%) can be obtained, and the relative reflectance measurement can be used for quality management with reference samples as a control.

[0061] Absolute reflectivity can be determined using the VN method. During baseline correction, light enters the detector through a V-shaped path formed by reflectors M1, M2 and M3. During sample measurement, light enters the detector through an N-shaped path formed by reflectors M1, sample, M2 and M3 (the sample is placed between M1 and M2, and the position of M2 and the angle of M3 are changed to ensure that the optical path from the light beam to the detector remains unchanged). The only difference between baseline correction and sample measurement is that the reflective surface of the sample is part of the optical path, while the other reflective surfaces and optical path remain unchanged. Using this method, the absolute reflectivity can be determined by comparing the difference between the detector measurements of baseline correction and sample.

[0062] S102, converting the reflectivity into a voltage signal, and determining whether the voltage signal meets a preset voltage threshold;

[0063] In the specific implementation, the reflectivity obtained above is converted into a voltage signal by utilizing the correspondence rule between reflectivity and voltage, and at the same time, it is determined whether the voltage signal meets the preset voltage threshold (in the present embodiment, the voltage threshold is the voltage signal corresponding to the highest or lowest allowable reflectivity, which can be automatically generated by the system or input by the user), and whether to perform power compensation is determined by the voltage signal judgment rule.

[0064] S103, if the voltage signal does not meet the preset voltage threshold, obtaining the initial power of the wafer to be processed, and calculating the power compensation value of the wafer to be processed based on the voltage signal;

[0065] Specifically, in this embodiment, a beam of light with a wavelength of 1064nm is emitted by the above-mentioned laser transmitter, and irradiated on the DBR coating on the back of multiple standard wafers in a predetermined direction (in this embodiment, the predetermined direction is vertical, and in other embodiments, the predetermined direction can also be an acute angle or an obtuse angle). At this time, the DBR coating on the back of the standard wafer will reflect the light beam and transmit it through the reflective optical fiber. The reflectivity tester will calculate the reflectivity of the standard wafer based on the reflection information. It should be noted that the standard wafer is a wafer with various known parameters, and its reflectivity and corresponding voltage signal are both known parameters.

[0066] The reflectivity of each standard wafer is converted into a voltage signal, and the power compensation value of each standard wafer is calculated based on the voltage signal of each standard wafer. A mapping relationship is constructed according to the power compensation value of each standard wafer and the voltage signal of each standard wafer to obtain a compensation value mapping table.

[0067] When establishing the compensation value mapping table, the engineering personnel will perform a reflectivity test on the standard wafer used to establish the compensation value mapping table. At this time, the reflectivity of the standard wafer will be obtained. Assuming that the reflectivity of the standard wafer is 15%, according to the corresponding rules of the reflectivity and voltage set by the system, as shown in the following table, the obtained reflectivity is converted into a voltage signal, and the voltage value is 2.1V. The voltage value is written into the compensation value mapping table. At the same time, the process of the standard wafer used to establish the compensation value mapping table is adjusted to debug the most suitable laser power for the standard wafer. Assuming that when the voltage is 2.1V, the most suitable power is 0.5W, and 0.5W is added to its corresponding compensation value mapping table. The following are some examples of compensation value mapping tables;

[0068] Table 1

[0069]

[0070] For further information, see Figure 3 , the step S103 specifically includes steps S1031 to S1032:

[0071] S1031, inputting the voltage signal into the compensation value mapping table to obtain a voltage difference between the voltage signal and the compensation value mapping table;

[0072] S1032: Determine a power compensation value corresponding to the voltage signal based on the voltage difference and the compensation value mapping table.

[0073] In the specific implementation, the obtained voltage signal is input into the above-mentioned compensation value mapping table, and the voltage signal is compared with the corresponding voltage in the compensation value mapping table to determine the corresponding power compensation value by comparing the voltage difference with the voltage signal in the compensation value mapping table. For example: After the compensation value mapping table is established, in mass production, the reflectivity test of the current wafer to be processed will be carried out before the wide-angle profile is taken. After the measurement is completed, the corresponding voltage value is calculated. Assuming that the reflectivity of the wafer is 16%, the corresponding voltage value is 2.2V. At this time, the voltage value of the wafer to be processed will be compared with the voltage value in the compensation value mapping table, that is, 2.2-2.1=0.1V, and the voltage difference is 0.1V. It can be seen from Table 1 above that for every 1% increase in reflectivity, that is, every 0.1V increase in voltage, the corresponding laser power compensation is 10mw.

[0074] S104, setting a scribing power of the wafer to be processed by using the power compensation value and the initial power.

[0075] In the specific implementation, after obtaining the power compensation value, 10mw is added to the original initial power, that is, 0.5+0.01=0.51W. At this time, the laser output power becomes 0.51W. This power is only for the current wafer to be processed and has no effect on subsequent wafers to be processed.

[0076] In summary, the dicing power setting method in the above-mentioned embodiment of the present invention determines the reflectivity of the wafer to be processed through reflection information, and converts the reflectivity into a corresponding voltage signal, determines the power compensation value corresponding to the wafer to be processed according to the voltage signal, and finds the corresponding power compensation value through the reflectivity in time before cutting to avoid the phenomenon that the laser dicing cannot be cut due to abnormal reflectivity during cutting and causes damage to the wafer; by optimizing the dicing power, the dicing effect of laser dicing is improved to avoid the scrapping of wafer dicing.

[0077] Embodiment 2

[0078] See also Figure 4 , which shows a method for setting dicing power in a second embodiment of the present invention, and the method specifically includes steps S201 to S205:

[0079] S201, irradiating a preset irradiation position of a wafer to be processed along a predetermined direction by a laser transmitter, and determining a reflectivity of the wafer to be processed based on reflection information reflected by the wafer to be processed;

[0080] In specific implementation, the scribing power setting method in this embodiment is applied to a laser scribing machine, which is equipped with a reflectivity tester. When the laser scribing machine loads the wafer to be processed to the wide angle, the laser emitter on the reflectivity tester will emit a light beam with a wavelength of 1064nm and irradiate the DBR coating on the back of the wafer to be processed in a predetermined direction (in this embodiment, the predetermined direction is vertical, and in other embodiments, the predetermined direction can also be an acute angle or an obtuse angle). At this time, the DBR coating on the back of the wafer to be processed will reflect the light beam and transmit it through the reflective optical fiber. The reflectivity tester will calculate the reflectivity of the wafer to be processed based on the reflection information.

[0081] Please refer to 2, which shows a schematic diagram of the reflectivity measurement principle, as follows:

[0082] In this embodiment, the specular reflectance is measured in two ways: relative and absolute. In the relative reflectance measurement, a reference sample is placed in the optical path for baseline correction, and then replaced with the sample to be measured to measure the reflectance. In this way, the relative reflectance relative to the reference sample (assuming the reflectance is 100%) can be obtained, and the relative reflectance measurement can be used for quality management with reference samples as a control.

[0083] Absolute reflectivity can be determined using the VN method. During baseline correction, light enters the detector through a V-shaped path formed by reflectors M1, M2 and M3. During sample measurement, light enters the detector through an N-shaped path formed by reflectors M1, sample, M2 and M3 (the sample is placed between M1 and M2, and the position of M2 and the angle of M3 are changed to ensure that the optical path from the light beam to the detector remains unchanged). The only difference between baseline correction and sample measurement is that the reflective surface of the sample is part of the optical path, while the other reflective surfaces and optical path remain unchanged. Using this method, the absolute reflectivity can be determined by comparing the difference between the detector measurements of baseline correction and sample.

[0084] S202, determining whether the reflectivity meets a reflectivity threshold range;

[0085] S203, when the reflectivity does not meet the reflectivity threshold, an alarm message is issued, and the wafer to be processed is marked as an abnormal wafer.

[0086] In specific implementation, when the reflectivity is less than 10% or greater than 20%, the machine will alarm to indicate that the reflectivity exceeds the set range. Because too high or too low a reflectivity will affect the performance of the product itself and does not meet the quality requirements of the product, the film source with too high or too low a reflectivity will not be cut and will be scrapped.

[0087] S204, when the reflectivity meets the reflectivity threshold, converting the reflectivity into a voltage signal, and determining whether the voltage signal meets a preset voltage threshold;

[0088] In the specific implementation, the reflectivity obtained above is converted into a voltage signal by utilizing the correspondence rule between reflectivity and voltage, and at the same time, it is determined whether the voltage signal meets the preset voltage threshold (in the present embodiment, the voltage threshold is the voltage signal corresponding to the highest or lowest allowable reflectivity, which can be automatically generated by the system or input by the user), and whether to perform power compensation is determined by the voltage signal judgment rule.

[0089] S205, if the voltage signal does not meet the preset voltage threshold, obtaining the initial power of the wafer to be processed, and calculating the power compensation value of the wafer to be processed based on the voltage signal;

[0090] Specifically, in this embodiment, a beam of light with a wavelength of 1064nm is emitted by the above-mentioned laser transmitter, and irradiated on the DBR coating on the back of multiple standard wafers in a predetermined direction (in this embodiment, the predetermined direction is vertical, and in other embodiments, the predetermined direction can also be an acute angle or an obtuse angle). At this time, the DBR coating on the back of the standard wafer will reflect the light beam and transmit it through the reflective optical fiber. The reflectivity tester will calculate the reflectivity of the standard wafer based on the reflection information. It should be noted that the standard wafer is a wafer with various known parameters, and its reflectivity and corresponding voltage signal are both known parameters.

[0091] The reflectivity of each standard wafer is converted into a voltage signal, and the power compensation value of each standard wafer is calculated based on the voltage signal of each standard wafer. A mapping relationship is constructed according to the power compensation value of each standard wafer and the voltage signal of each standard wafer to obtain a compensation value mapping table.

[0092] When establishing the compensation value mapping table, the engineering personnel will perform a reflectivity test on the standard wafer used to establish the compensation value mapping table. At this time, the reflectivity of the standard wafer will be obtained. Assuming that the reflectivity of the standard wafer is 15%, according to the corresponding rules of the reflectivity and voltage set by the system, as shown in the following table, the obtained reflectivity is converted into a voltage signal, and the voltage value is 2.1V. The voltage value is written into the compensation value mapping table. At the same time, the process of the standard wafer used to establish the compensation value mapping table is adjusted to debug the most suitable laser power for the standard wafer. Assuming that when the voltage is 2.1V, the most suitable power is 0.5W, and 0.5W is added to its corresponding compensation value mapping table. The following are some examples of compensation value mapping tables;

[0093] Table 1

[0094]

[0095] Further, the obtained voltage signal is input into the above-mentioned compensation value mapping table, and the voltage signal is compared with the corresponding voltage in the compensation value mapping table to determine the corresponding power compensation value by comparing the voltage difference with the voltage signal in the compensation value mapping table. For example: After the compensation value mapping table is established, in mass production, the reflectivity test of the current wafer to be processed will be carried out before the wide-angle profile is taken. After the measurement is completed, the corresponding voltage value is calculated. Assuming that the reflectivity of the wafer is 16%, the corresponding voltage value is 2.2V. At this time, the voltage value of the wafer to be processed will be compared with the voltage value in the compensation value mapping table, that is, 2.2-2.1=0.1V, and the voltage difference is 0.1V. It can be seen from Table 1 above that for every 1% increase in reflectivity, that is, every 0.1V increase in voltage, the corresponding laser power compensation is 10mw.

[0096] S206, using the power compensation value to perform power compensation on the initial power, and determining whether the initial power after power compensation meets the scribing power requirement;

[0097] S207, if the initial power after power compensation meets the scribing power requirement, use the initial power after power compensation as the scribing power;

[0098] In the specific implementation, after obtaining the power compensation value, 10mw is added to the original initial power, that is, 0.5+0.01=0.51W. At this time, the laser output power becomes 0.51W. This power is only for the current wafer to be processed and has no effect on subsequent wafers to be processed.

[0099] Furthermore, after obtaining the corresponding scribing power, the scribing power is judged. When the scribing power does not meet the scribing power requirements, it means that the scribing power may be abnormal and the scribing power needs to be recalculated. When the scribing power meets the scribing power requirements, it means that the scribing power meets the requirements and the scribing power is directly set as the scribing power of the wafer to be processed.

[0100] In summary, the dicing power setting method in the above-mentioned embodiment of the present invention avoids the influence of too high or too low reflectivity on the performance of the product itself by adding reflectivity verification rules; at the same time, dicing power verification rules are added to avoid the influence of inaccurate dicing power setting on the dicing quality of the wafer.

[0101] Embodiment 3

[0102] Another aspect of the present invention is to provide a dicing power setting system, see Figure 5 , which is a dicing power setting system in a third embodiment of the present invention, comprising:

[0103] A reflectivity acquisition module 11 is used to irradiate a preset irradiation position of a wafer to be processed along a predetermined direction through a laser transmitter, and determine the reflectivity of the wafer to be processed based on reflection information reflected by the wafer to be processed;

[0104] A data conversion module 12, used to convert the reflectivity into a voltage signal and determine whether the voltage signal meets a preset voltage threshold;

[0105] A power compensation value calculation module 13, configured to obtain the initial power of the wafer to be processed if the voltage signal does not meet a preset voltage threshold, and calculate the power compensation value of the wafer to be processed based on the voltage signal;

[0106] Furthermore, the power compensation value calculation module 13 includes:

[0107] a voltage difference calculation unit, configured to input the voltage signal into the compensation value mapping table to obtain a voltage difference between the voltage signal and the compensation value mapping table;

[0108] A power compensation value calculation unit is used to determine the power compensation value corresponding to the voltage signal based on the voltage difference value and the compensation value mapping table.

[0109] The scribing power determination module 14 is used to set the scribing power of the wafer to be processed by using the power compensation value and the initial power.

[0110] In some optional embodiments, the system further comprises:

[0111] A standard reflectivity acquisition module, used to irradiate preset irradiation positions of a plurality of standard wafers respectively along a predetermined direction through a laser transmitter, and determine the reflectivity of each standard wafer based on reflection information reflected by each standard wafer;

[0112] A standard power compensation value calculation module, used for converting the reflectivity of each standard wafer into a voltage signal, and calculating the power compensation value of each standard wafer based on the voltage signal of each standard wafer;

[0113] The compensation value mapping table construction module is used to construct a mapping relationship according to the power compensation value of each standard wafer and the voltage signal of each standard wafer to obtain a compensation value mapping table.

[0114] In some optional embodiments, the system further comprises:

[0115] A power determination module, used to perform power compensation on the initial power using the power compensation value, and determine whether the initial power after power compensation meets the dicing power requirement;

[0116] The dicing power verification module is used to use the initial power after power compensation as the dicing power if the initial power after power compensation meets the dicing power requirement.

[0117] In some optional embodiments, the system further comprises:

[0118] A reflectivity judgment module, used to judge whether the reflectivity meets the reflectivity threshold range;

[0119] The alarm module is used to issue an alarm message when the reflectivity does not meet the reflectivity threshold and mark the wafer to be processed as an abnormal wafer.

[0120] The functions or operation steps implemented when the above modules and units are executed are generally the same as those in the above method embodiments, and will not be repeated here.

[0121] The dicing power setting system provided in the embodiment of the present invention has the same implementation principle and technical effects as those of the aforementioned method embodiment. For the sake of brief description, for matters not mentioned in the system embodiment, reference may be made to the corresponding contents in the aforementioned method embodiment.

[0122] Embodiment 4

[0123] The present invention also provides a computer, see Figure 6 , shown is a computer in the fourth embodiment of the present invention, including a memory 10, a processor 20, and a computer program 30 stored in the memory 10 and executable on the processor 20, and the processor 20 implements the above-mentioned dicing power setting method when executing the computer program 30.

[0124] The memory 10 includes at least one type of readable storage medium, and the readable storage medium includes a flash memory, a hard disk, a multimedia card, a card-type memory (e.g., an SD or DX memory, etc.), a magnetic memory, a magnetic disk, an optical disk, etc. The memory 10 may be an internal storage unit of a computer in some embodiments, such as a hard disk of the computer. The memory 10 may also be an external storage device in other embodiments, such as a plug-in hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash card, etc. Further, the memory 10 may also include both an internal storage unit of a computer and an external storage device. The memory 10 may be used not only to store application software and various types of data installed in the computer, but also to temporarily store data that has been output or is to be output.

[0125] Among them, in some embodiments, the processor 20 can be an electronic control unit (Electronic Control Unit, abbreviated as ECU, also known as a vehicle computer), a central processing unit (Central Processing Unit, CPU), a controller, a microcontroller, a microprocessor or other data processing chip, used to run the program code stored in the memory 10 or process data, such as executing access restriction programs, etc.

[0126] It should be pointed out that Figure 6 The structure shown does not constitute a limitation on the computer. In other embodiments, the computer may include fewer or more components than shown in the figure, or combine certain components, or arrange the components differently.

[0127] The embodiment of the present invention further provides a readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the dicing power setting method as described above is implemented.

[0128] Those skilled in the art will appreciate that the logic and / or steps represented in the flowchart or otherwise described herein, for example, may be considered as an ordered list of executable instructions for implementing logical functions, and may be embodied in any computer-readable storage medium for use by an instruction execution system, device, or apparatus (such as a computer-based system, a system including a processor, or other system that can fetch instructions from an instruction execution system, device, or apparatus and execute instructions), or in conjunction with such instruction execution systems, devices, or apparatuses. For purposes of this specification, a "computer-readable storage medium" may be any device that can contain, store, communicate, propagate, or transmit a program for use by an instruction execution system, device, or apparatus, or in conjunction with such instruction execution systems, devices, or apparatuses.

[0129] More specific examples of computer-readable storage media (a non-exhaustive list) include the following: an electrical connection with one or more wirings (electronic device), a portable computer disk case (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable and programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disk read-only memory (CDROM). In addition, the computer-readable storage medium may even be a paper or other suitable readable storage medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other readable storage medium, followed by editing, deciphering or processing in another suitable manner as necessary, and then stored in a computer memory.

[0130] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above-mentioned embodiments, a plurality of steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or a combination thereof: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0131] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0132] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A method for setting dicing power, characterized in that: include: Irradiating a preset irradiation position of a wafer to be processed along a predetermined direction by a laser emitter, and determining the reflectivity of the wafer to be processed based on reflection information reflected by the wafer to be processed; Converting the reflectivity into a voltage signal, and determining whether the voltage signal meets a preset voltage threshold; If the voltage signal does not meet the preset voltage threshold, the initial power of the wafer to be processed is acquired, and a power compensation value of the wafer to be processed is calculated based on the voltage signal; The scribing power of the wafer to be processed is set by using the power compensation value and the initial power, wherein before the step of calculating the power compensation value of the wafer to be processed based on the voltage signal, the method further includes: Using a laser emitter to irradiate preset irradiation positions of a plurality of standard wafers along a predetermined direction, and determining the reflectivity of each standard wafer based on reflection information reflected by each standard wafer; Converting the reflectivity of each standard wafer into a voltage signal, and calculating the power compensation value of each standard wafer based on the voltage signal of each standard wafer; A mapping relationship is established according to the power compensation value of each standard wafer and the voltage signal of each standard wafer to obtain a compensation value mapping table.

2. The method for setting dicing power according to claim 1, characterized in that: The step of calculating the power compensation value of the wafer to be processed based on the voltage signal comprises: Inputting the voltage signal into the compensation value mapping table to obtain a voltage difference between the voltage signal and the compensation value mapping table; A power compensation value corresponding to the voltage signal is determined based on the voltage difference and the compensation value mapping table.

3. The method for setting dicing power according to claim 1, characterized in that: After the step of setting the scribing power of the wafer to be processed by using the power compensation value and the initial power, the method further includes: Performing power compensation on the initial power using the power compensation value, and determining whether the initial power after power compensation meets the scribing power requirement; If the initial power after power compensation meets the scribing power requirement, the initial power after power compensation is used as the scribing power.

4. The method for setting dicing power according to claim 1, characterized in that: After the step of determining the reflectivity of the wafer to be processed based on the reflection information reflected by the wafer to be processed, the method further includes: Determining whether the reflectivity meets a reflectivity threshold range; When the reflectivity does not meet the reflectivity threshold, an alarm message is issued and the wafer to be processed is marked as an abnormal wafer.

5. A dicing power setting system, characterized in that: include: A reflectivity acquisition module, used to irradiate a preset irradiation position of a wafer to be processed along a predetermined direction through a laser transmitter, and determine the reflectivity of the wafer to be processed based on reflection information reflected by the wafer to be processed; A data conversion module, used to convert the reflectivity into a voltage signal and determine whether the voltage signal meets a preset voltage threshold; A power compensation value calculation module, used for obtaining the initial power of the wafer to be processed if the voltage signal does not meet the preset voltage threshold, and calculating the power compensation value of the wafer to be processed based on the voltage signal; A scribing power determination module, used for setting the scribing power of the wafer to be processed by using the power compensation value and the initial power; The system further comprises: A standard reflectivity acquisition module, used to irradiate preset irradiation positions of a plurality of standard wafers respectively along a predetermined direction through a laser transmitter, and determine the reflectivity of each standard wafer based on reflection information reflected by each standard wafer; A standard power compensation value calculation module, used for converting the reflectivity of each standard wafer into a voltage signal, and calculating the power compensation value of each standard wafer based on the voltage signal of each standard wafer; The compensation value mapping table construction module is used to construct a mapping relationship according to the power compensation value of each standard wafer and the voltage signal of each standard wafer to obtain a compensation value mapping table.

6. The dicing power setting system according to claim 5, characterized in that: The power compensation value calculation module includes: a voltage difference calculation unit, configured to input the voltage signal into the compensation value mapping table to obtain a voltage difference between the voltage signal and the compensation value mapping table; A power compensation value calculation unit is used to determine the power compensation value corresponding to the voltage signal based on the voltage difference value and the compensation value mapping table.

7. A readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the dicing power setting method as described in any one of claims 1 to 4 is implemented.

8. A computer comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the dicing power setting method according to any one of claims 1 to 4 is implemented.

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