An IGBT device dynamic characteristic parameter extraction method, a storage medium and an electronic device

Abstract

Embodiments of the present application provide an IGBT device dynamic characteristic parameter extraction method, a storage medium and an electronic device. The method comprises: selecting and traversing a target folder, and obtaining a number of double-pulse test waveform files; reading a double-pulse test waveform file; identifying physical quantities tested by different test channels in the double-pulse test waveform file; identifying a switching process of an IGBT device in the double-pulse test waveform file based on the identified physical quantities; extracting dynamic characteristic parameters of the IGBT device and calculating switching losses based on the identified physical quantities and the switching process; if the double-pulse test waveform file is the last double-pulse test waveform file in the target folder, stopping reading; otherwise, continuing to perform the step of reading a double-pulse test waveform file. The present application improves the original manual card point reading method, processes double-pulse test waveform files and extracts IGBT device dynamic characteristic parameters in batches, greatly improving work efficiency.

Description

Technical Field

[0001] This invention relates to the field of IGBT technology, and in particular to a method for extracting dynamic characteristic parameters of IGBT devices, a storage medium, and an electronic device. Background Technology

[0002] The dynamic characteristics of IGBT (Insulated Gate Bipolar Transistor) devices are crucial indicators in their applications. These characteristics encompass not only the safe operating area of ​​the IGBT but also its losses under current operating conditions. Currently, the commonly used method for measuring dynamic characteristics is the dual-pulse test. This method measures the waveform of the IGBT's switching process, allowing for manual reading of switching speed, switching losses, and diode reverse recovery parameters. However, with increasingly demanding application requirements for IGBT devices (such as the need to measure the trend of losses with respect to current), the number of test waveforms is constantly increasing, and the required IGBT parameters are becoming more detailed. The existing manual reading method can no longer efficiently process the test waveforms. Furthermore, external interference during the test and the probe's own testing noise can also affect the final parameter extraction results.

[0003] The dynamic characteristics of IGBT devices are important technical indicators for IGBT applications, such as the safe operating area (RBSOA, RRSOA) and switching losses (E). on E off The dynamic characteristics of IGBT devices, such as switching speed (di / dt, dv / dt), are crucial for their application. If an IGBT device exceeds its safe operating range during continuous operation, it is at risk of over-stress failure. Excessive switching losses combined with high switching frequency can also easily lead to overheating failure. Therefore, accurate evaluation of the dynamic characteristics of IGBT devices is essential for their application.

[0004] Currently, the commonly used method for extracting IGBT device characteristics is the double-pulse chopper test. This method can obtain the switching waveform of the IGBT device at a specific current point. Then, by manually using an oscilloscope to pinpoint the points, the safe operating area parameters and losses of the IGBT device under that operating condition can be read. However, the operating current of IGBT devices is usually range-bound, which means that multiple current points need to be tested during the double-pulse test. Considerations for drive parameters, temperature, and installation location in IGBT device applications lead to a significant increase in measurement data. Manually extracting the dynamic characteristic parameters of IGBT devices is labor-intensive and inefficient. Furthermore, the measurement errors of the measuring tools and the subjectivity of the human operator reduce the reliability of the test results. Summary of the Invention

[0005] To address the above problems, embodiments of the present invention provide a method for extracting dynamic characteristic parameters of IGBT devices, a storage medium, and an electronic device.

[0006] In a first aspect, embodiments of the present invention provide a method for extracting dynamic characteristic parameters of an IGBT device, including:

[0007] Select and iterate through the target folder to obtain the number of double pulse test waveform files;

[0008] Read a double pulse test waveform file;

[0009] Identify the physical quantities tested by different test channels in the dual-pulse test waveform file;

[0010] Based on the identified physical quantities, the switching process of the IGBT device in the dual-pulse test waveform file is identified;

[0011] Based on the identified physical quantities and switching process, the dynamic characteristic parameters of the IGBT device are extracted and the switching loss is calculated.

[0012] If the double pulse test waveform file is the last double pulse test waveform file in the target folder, then stop reading; otherwise, continue with the step of reading a double pulse test waveform file.

[0013] In some embodiments, before identifying the physical quantities tested by different test channels in the double-pulse test waveform file, the method further includes: performing a smoothing filter on the double-pulse test waveform file.

[0014] In some embodiments, the smoothing and filtering process performed on the dual-pulse test waveform file includes:

[0015] The double-pulse test waveform file is subjected to a preset number of mean filtering processes to filter out interference signals while maintaining the original shape of the double-pulse test waveform.

[0016] In some implementations, before extracting the dynamic characteristic parameters of the IGBT device and calculating the switching losses based on the identified physical quantities and switching processes, the method further includes: performing data calibration on the dual-pulse test waveform file.

[0017] In some implementations, the data calibration of the double-pulse test waveform file includes:

[0018] Test data for the calibrated switching process is obtained by subtracting the average value of the probe in the zero-point region from the test data of the identified switching process.

[0019] In some implementations, the step of extracting dynamic characteristic parameters of the IGBT device and calculating switching losses based on the identified physical quantities and switching processes includes:

[0020] Based on the identified physical quantities and switching process, calculate the dynamic characteristic parameters according to the definition of dynamic characteristic parameters;

[0021] Switching losses are calculated using an integral accumulation method.

[0022] In some implementations, the dynamic characteristic parameters include at least one of the following:

[0023] Activation speed;

[0024] Shutdown speed;

[0025] Turn off overvoltage;

[0026] Switching losses; and

[0027] Diode reverse recovery parameters.

[0028] In some implementations, the waveforms corresponding to the range of dynamic characteristic parameters and switching losses of the IGBT device are stored in the form of images.

[0029] After the reading stops, the dynamic characteristic parameters and switching losses of the IGBT device are stored in the target folder in .xls format.

[0030] Secondly, embodiments of the present invention provide an IGBT device dynamic characteristic parameter extraction device, comprising:

[0031] The acquisition module is used to select and traverse the target folder to obtain the number of double pulse test waveform files;

[0032] The reading module is used to read a double-pulse test waveform file.

[0033] The first identification module is used to identify the physical quantities tested by different test channels in the dual-pulse test waveform file;

[0034] The second identification module is used to identify the switching process of the IGBT device in the double-pulse test waveform file based on the identified physical quantities.

[0035] The extraction module is used to extract the dynamic characteristic parameters of the IGBT device and calculate the switching loss based on the identified physical quantities and switching process.

[0036] The judgment module is used to determine whether the double pulse test waveform file is the last double pulse test waveform file in the target folder; if the double pulse test waveform file is the last double pulse test waveform file in the target folder, then reading stops; otherwise, the reading module continues to read the next double pulse test waveform file.

[0037] Thirdly, embodiments of the present invention provide a storage medium storing a computer program, which, when executed by one or more processors, implements the IGBT device dynamic characteristic parameter extraction method as described in the first aspect.

[0038] Fourthly, embodiments of the present invention provide an electronic device, including a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, it implements the IGBT device dynamic characteristic parameter extraction method as described in the first aspect.

[0039] Compared with the prior art, one or more embodiments of the present invention can bring at least the following beneficial effects:

[0040] This invention improves upon the traditional manual point-reading method by batch processing of dual-pulse test waveform files and extracting dynamic characteristic parameters of IGBT devices, outputting the results in tabular form, thus significantly increasing work efficiency. The application of filtering and calibration reduces the impact of test noise caused by external interference and measurement errors caused by measuring tools, ensuring the reliability of the results. Furthermore, this method includes a built-in test quantity identification function, automatically recognizing different current and voltage signals collected in the test waveform. It has no strict requirements on oscilloscope settings during testing and is simple and convenient to operate. Attached Figure Description

[0041] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 This is a flowchart of a method for extracting dynamic characteristic parameters of an IGBT device provided in an embodiment of the present invention;

[0043] Figure 2 This is a typical waveform diagram of a double-pulse test;

[0044] Figure 3 This is a schematic diagram of the IGBT turn-off and turn-off process under dual-pulse operating conditions;

[0045] Figure 4 This is a schematic diagram of the shutdown speed extraction results provided in an embodiment of the present invention;

[0046] Figure 5 This is a schematic diagram of the peak reverse recovery power extraction result of the diode provided in an embodiment of the present invention;

[0047] Figure 6This is a schematic diagram illustrating the smoothing filter effect provided in an embodiment of the present invention;

[0048] Figure 7 This is a block diagram of an IGBT device dynamic characteristic parameter extraction device provided in an embodiment of the present invention. Detailed Implementation

[0049] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0050] Example 1

[0051] Figure 1 A flowchart of a method for extracting dynamic characteristic parameters of an IGBT device is shown, as follows: Figure 1 As shown, this embodiment provides a method for extracting dynamic characteristic parameters of an IGBT device, including at least steps S100 to S900:

[0052] Step S100: Select and traverse the target folder to obtain the number of double pulse test waveform files.

[0053] In some implementations, double-pulse test waveform files can be obtained by performing double-pulse tests on different types of IGBT devices. The different types may include, but are not limited to, different models or different brands. The double-pulse test waveform files of different types of IGBT devices are placed in different folders. When applying this method, a folder can be selected as the target folder according to different needs, and the number of double-pulse test waveform files in the target folder can be varied to determine the number of double-pulse test waveform files that need to be read in this execution of this method, which facilitates the reading of waveforms and the setting of program loop conditions in subsequent processing.

[0054] Step S200: Read a double pulse test waveform file.

[0055] In some implementations, the double pulse test waveform file obtained after the double pulse test is stored in .csv format, so the double pulse test waveform file read is in .csv format. In some cases, the double pulse test waveform file is stored in .wdf format. In this case, it is necessary to convert the .wdf format to .csv format so that the double pulse test waveform file is in .csv format and stored in the target folder.

[0056] Step S400: Identify the physical quantities tested by different test channels in the dual-pulse test waveform file.

[0057] In some implementations, the gate signal of the IGBT device needs to be monitored during double-pulse testing, and the terminal voltage and collector current of the IGBT device, as well as the terminal voltage and current of the freewheeling diode, need to be tested simultaneously. Since different testers have different testing habits, this method needs to identify and process the physical quantities tested by each channel of the oscilloscope during the double-pulse test when processing the read double-pulse test waveform file, including the aforementioned voltages and currents.

[0058] In some cases, the identification of the physical quantities tested by different test channels in the double-pulse test waveform file is the identification of the various voltages and currents mentioned above (the terminal voltage and collector current of the IGBT device, and the terminal voltage and current of the freewheeling diode). Specifically, it involves placing each voltage and current in the double-pulse test waveform file into a specified array.

[0059] In some implementations, the identification of the physical quantities tested by different test channels in the double-pulse test waveform file is achieved through feature matching. A typical waveform for a double-pulse test is as follows: Figure 2 As shown, the gate signal of the IGBT device can first be found by averaging the physical quantities measured in each test channel. Then, the four switching action points are located by using the gate signal to cross zero. Further identification is then performed based on the characteristics of each measured data point (including the aforementioned voltages and currents). For example, during a single turn-on process, the collector current IC increases continuously from zero, while the diode voltage remains at a high potential. Although both the diode current and the IGBT device's terminal voltage remain near zero during turn-on, they will show significant differences during a single turn-off. It should be understood that the four switching action points include: two turn-on points and two turn-off points.

[0060] Step S500: Based on the identified physical quantities, identify the switching process of the IGBT device in the double-pulse test waveform file.

[0061] In some implementations, when performing a double-pulse test, the dynamic characteristic parameters of the IGBT device are mainly reflected in its switching process. In this embodiment, the switching process of the IGBT device is identified by feature point recognition and stored in the working area. When calculating the dynamic characteristic parameters of the IGBT device and the switching loss, the switching process can be directly located without repeated identification.

[0062] It should be understood that the switching process includes both the turn-on and turn-off processes of the IGBT device.

[0063] The gate signal crossing zero can initially locate the four switching action points of the IGBT device. Switching process identification, however, aims to more precisely identify the IGBT device's start-up turn-on time, the transition point from turn-on to steady-state conduction, the transition point from steady-state to the start of turn-off, and the complete turn-off time. This provides a basis for subsequent dynamic characteristic parameter extraction. Switching process identification also employs feature recognition methods. For example, the IGBT device's turn-on process corresponds to the rise in collector current and the decrease in terminal voltage. Therefore, the start of the collector current rise can be taken as the start of turn-on, and the decrease in terminal voltage to the saturation voltage drop can be taken as the end of turn-on. The turn-off process is the reverse of the turn-on process. The diode's reverse recovery process corresponds to the rise and fall of diode current and the rise in terminal voltage, respectively. The IGBT turn-off turn-on process under dual-pulse operation is as follows: Figure 3 As shown.

[0064] Step S700: Based on the identified physical quantities and switching process, extract the dynamic characteristic parameters of the IGBT device and calculate the switching loss.

[0065] The extracted dynamic characteristic parameters of the IGBT devices include multiple dynamic characteristic parameters of IGBTs and diodes.

[0066] In some implementations, the dynamic characteristic parameters of the IGBT device include at least one of the following:

[0067] Activation speed di / dt;

[0068] Turn-off speed dv / dt;

[0069] Turn off overvoltage;

[0070] Switching losses (including turn-on losses E) on Turn-off loss E off );as well as

[0071] Diode reverse recovery parameters (including peak reverse recovery power P) rr Diode reverse recovery power loss E rec ).

[0072] It should be understood that, in practical applications, the dynamic characteristic parameters of IGBT devices are not limited to the above-mentioned turn-on speed di / dt, turn-off speed dv / dt, turn-off overvoltage, switching loss and diode reverse recovery parameters, but may also include other dynamic characteristic parameters. This embodiment does not impose any limitations.

[0073] In some implementations, step S700, based on the identified physical quantities and switching process, extracts the dynamic characteristic parameters of the IGBT device and calculates the switching losses, including:

[0074] Based on the identified physical quantities and switching process, the dynamic characteristic parameters are calculated according to the definition of dynamic characteristic parameters; and the switching loss is calculated using an integral accumulation method.

[0075] In some cases, the turn-off speed dv / dt of a certain type of IGBT device is the rate of voltage rise from 10% to 90% of the IGBT device terminal voltage (e.g., Figure 4 As shown), the peak reverse recovery power P of the diode rr The power (P) during the reverse recovery process of the diode rec Maximum value (e.g.) Figure 5 As shown, IGBT devices from different brands vary. The method in this embodiment supports applications of various brands / types of IGBT devices. Users can select the appropriate program according to different applications to calculate the dynamic characteristic parameters and switching losses of the corresponding brand / type of IGBT device.

[0076] In some cases, the calculation of switching losses is implemented by integral accumulation. Taking the calculation of turn-on loss as an example (turn-off loss E...),... off With diode reverse recovery loss E rec The calculation method is consistent with the turn-on loss. Since the turn-on process of the IGBT device has been accurately located during the switching process identification, assuming the turn-on start time is T1, the turn-on end time is T2, and the oscilloscope sampling interval is t, the turn-on process can be divided into (T2-T1) / t small intervals. The power curve P of the IGBT device is obtained by multiplying the terminal voltage and collector current of the IGBT device. If the power in the i-th interval during the turn-on process is P... i The formula for calculating turn-on loss is as follows:

[0077] E on =∑P i *t

[0078] In the formula, i = 1, 2, 3, ..., (T2-T1) / t.

[0079] In some implementations, the waveforms corresponding to the range of values ​​taken during the calculation of the dynamic characteristic parameters and switching losses of the IGBT device are also stored in the form of images; that is, the waveform portions involved in each dynamic characteristic parameter, turn-on loss, and turn-off loss are extracted from the double-pulse test waveform file, marked, and stored separately in a designated folder as images.

[0080] Step S800: Determine whether the double pulse test waveform file is the last double pulse test waveform file in the target folder.

[0081] If the current double pulse test waveform file is the last double pulse test waveform file in the target folder, then proceed to step S900; otherwise, continue to step S200 to read the next double pulse test waveform file.

[0082] Step S900: Stop reading.

[0083] In some implementations, after reading is stopped, the dynamic characteristic parameters and switching losses of the IGBT device are stored in the target folder in .xls format.

[0084] The process determines whether the current double-pulse test waveform file is the last one in the target folder, i.e., whether all double-pulse test waveform files in the target folder have been read and processed. If the current double-pulse test waveform file is not the last one, the next double-pulse test waveform file is read, and step S200 is executed, until all double-pulse test waveform files have been processed. If the current double-pulse test waveform file is the last one, reading stops, and the dynamic characteristic parameters and switching loss results of the IGBT device are saved. In some cases, the corresponding results are stored in a specified Excel file according to the target folder name. When extracting the dynamic characteristic parameters of the IGBT device, the extraction range of each parameter is also marked and saved as an image for easy reference later.

[0085] In practical applications, if external interference factors exist during the double-pulse test of IGBT devices, many glitches will appear on the test waveform. These glitches are usually illusory, and the double-pulse test probe itself also has some test noise. These interference signals will significantly affect the extraction of dynamic characteristic parameters of the IGBT device and the calculation of switching losses. Therefore, in some embodiments, before step S400 identifies the physical quantities tested by different test channels in the double-pulse test waveform file, this method may further include:

[0086] Step S300: Perform smoothing filtering on the dual-pulse test waveform file.

[0087] This embodiment performs smoothing filtering on the dual-pulse test waveform file to remove interference signals, so that the dual-pulse test waveform file can truly and accurately reflect the dynamic characteristics of the IGBT device.

[0088] The above-mentioned smoothing filtering process not only filters out interference signals in the waveform, but also does not change the original shape of the waveform, especially the rising and falling edges, which must remain consistent with the original waveform. Therefore, in some embodiments, step S300, which performs smoothing filtering on the dual-pulse test waveform file, may include:

[0089] Step S301: Perform mean filtering on the double pulse test waveform file for a preset number of times to filter out interference signals while maintaining the original shape of the double pulse test waveform.

[0090] In some cases, the preset number of times can be 2 to 3.

[0091] Figure 6 A schematic diagram of the smoothing filter effect is shown, such as... Figure 6 As shown, the waveform curve a before smoothing filtering has many spikes. After the mean filtering and superposition process is performed for a preset number of times, the interference signal in the waveform curve b after smoothing filtering is significantly reduced, and the waveform is smoother.

[0092] In practical applications, the waveform of the switching process of IGBT devices is usually tested using a high-voltage differential probe and a flexible current probe. However, during the double-pulse test, the probe may drift, meaning the origin is not zero. In this case, without calibration, the extracted dynamic characteristic parameters may have some deviation, further affecting the calculation results of switching losses. Therefore, in some embodiments, before step S700 extracts the dynamic characteristic parameters of the IGBT device and calculates the switching losses based on the identified physical quantities and the switching process, it also includes:

[0093] Step S600: Perform data calibration on the dual-pulse test waveform file.

[0094] In some cases, step S600, which performs data calibration on the dual-pulse test waveform file, may include:

[0095] Step S601: Subtract the average value of the probe in the zero-point region from the test data of the identified switching process to obtain the test data of the calibrated switching process.

[0096] Data calibration is a preparatory step for extracting the dynamic characteristic parameters of IGBT devices and calculating switching losses. Its purpose is to eliminate probe testing errors. In some cases, this can be achieved by subtracting the average value of the probe's zero-point region from the test data corresponding to the switching process in the dual-pulse test waveform file. For example, the collector current of an IGBT device should be zero when it is turned off. If the average value of the test data in this region is not zero, it indicates that the probe is floating or sinking. When extracting the dynamic characteristic parameters of the IGBT device and calculating the switching losses, this average value should be subtracted first.

[0097] The IGBT device dynamic characteristic parameter extraction method in this embodiment automatically processes and outputs the waveform files obtained from the double-pulse test, greatly improving work efficiency. Compared with existing technologies, it extracts more parameters, allowing for more detailed IGBT device applications. It supports batch processing of double-pulse test waveform files, eliminating the need to analyze individual files one by one, making operation simpler and more convenient, and facilitating the generation of IGBT device parameter variation curves with respect to current.

[0098] Furthermore, the dual-pulse test waveform was smoothed to reduce the impact of external interference signals and the probe's own test noise on the test results, thereby increasing the accuracy of the test results. A signal recognition function was set up, which can automatically identify voltage and current quantities based on the characteristics of the dual-pulse test waveform and reassign them to a specified array. This has no requirements on the oscilloscope's channel settings during testing and possesses strong versatility.

[0099] Furthermore, the double-pulse test waveform is calibrated, which reduces the impact of the test probe drift on the test results during the double-pulse test, making the parameter extraction results more reliable.

[0100] When the method in this embodiment is implemented as a computer program, it can be implemented using, but is not limited to, MATLAB. Different programming languages ​​can also be used depending on the programming environment. In the above method's flow, the target folder traversal, waveform reading, and data storage all have existing functions that can be directly called.

[0101] Example 2

[0102] Figure 7 A block diagram of a device for extracting dynamic characteristic parameters of an IGBT device is shown, as follows: Figure 7 As shown, this embodiment provides a device for extracting dynamic characteristic parameters of an IGBT device, including:

[0103] Module 710 is used to select and traverse the target folder to obtain the number of double pulse test waveform files;

[0104] The reading module 720 is used to read a double-pulse test waveform file;

[0105] The first identification module 740 is used to identify the physical quantities tested by different test channels in the double-pulse test waveform file;

[0106] The second identification module 750 is used to identify the switching process of the IGBT device in the double-pulse test waveform file based on the identified physical quantities.

[0107] Extraction module 770 is used to extract the dynamic characteristic parameters of IGBT devices and calculate switching losses based on the identified physical quantities and switching processes;

[0108] The judgment module 780 is used to determine whether the double pulse test waveform file is the last double pulse test waveform file in the target folder; if the double pulse test waveform file is the last double pulse test waveform file in the target folder, then reading stops; otherwise, the reading module continues to read the next double pulse test waveform file.

[0109] It should be understood that the acquisition module 710 can be used to perform step S100 of Embodiment 1, the reading module 720 can be used to perform step S200 of Embodiment 1, the first identification module 740 can be used to perform step S400 of Embodiment 1, the second identification module 750 can be used to perform step S500 of Embodiment 1, the extraction module 770 can be used to perform step S700 of Embodiment 1, and the judgment module 780 can be used to perform step S800 of Embodiment 1.

[0110] In some embodiments, the device may further include:

[0111] The filtering module 730 is used to perform smoothing filtering on the dual-pulse test waveform file.

[0112] In some embodiments, the device may further include:

[0113] The calibration module 760 is used to perform data calibration on the dual-pulse test waveform file.

[0114] It should be understood that the filtering module 730 can be used to perform step S300 in Embodiment 1, and the calibration module 760 can be used to perform step S600 in Embodiment 1.

[0115] In some embodiments, the device may further include:

[0116] Storage module 790 is used to store the waveforms corresponding to the numerical ranges taken during the calculation of the dynamic characteristic parameters and switching losses of the IGBT device in image format; and

[0117] After processing all waveform files in the target folder and stopping reading, the dynamic characteristic parameters and switching losses of the IGBT device are stored in the target folder in .xls format via the interface with EXCEL.

[0118] For the specific implementation methods of the above steps, please refer to Example 1, which will not be repeated in this example.

[0119] Those skilled in the art will understand that the above modules or steps can be implemented using a general-purpose programming language. They can be centralized in a single main program or independently encapsulated into multiple sub-modules using a modular design. In some cases, this embodiment uses MATLAB as the programming language, but it is not limited to this language; for example, C, JAVA, Pathol, etc., can also be used.

[0120] Example 3

[0121] This embodiment provides a storage medium on which a computer program is stored. When the computer program is executed by one or more processors, it implements the method for extracting dynamic characteristic parameters of IGBT devices according to Embodiment 1.

[0122] In this embodiment, the storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as Static Random Access Memory (SRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Erasable Programmable Read-Only Memory (EPROM), Programmable Read-Only Memory (PROM), Read-Only Memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0123] The method for extracting dynamic characteristic parameters of IGBT devices is detailed in the aforementioned embodiments and will not be repeated here.

[0124] Example 4

[0125] This embodiment provides an electronic device, including a memory and a processor. The memory stores a computer program, and when the computer program is executed by the processor, it implements the IGBT device dynamic characteristic parameter extraction method of Embodiment 1.

[0126] In this embodiment, the processor can be implemented as an Application Specific Integrated Circuit (ASIC), Digital Signal Processor (DSP), Digital Signal Processing Device (DSPD), Programmable Logic Device (PLD), Field Programmable Gate Array (FPGA), controller, microcontroller, microprocessor, or other electronic components, and is used to execute the methods in the above embodiments. The method for extracting dynamic characteristic parameters of the IGBT device implemented when the computer program running on the processor is executed can refer to the specific embodiments of the methods provided in the foregoing embodiments of this invention, and will not be repeated here.

[0127] In the several embodiments provided in this invention, it should be understood that the disclosed systems and methods can also be implemented in other ways. The system and method embodiments described above are merely illustrative.

[0128] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0129] While the embodiments disclosed in this invention are as described above, the content is merely for the purpose of facilitating understanding of the invention and is not intended to limit the invention. Any person skilled in the art to which this invention pertains may make any modifications and variations in form and detail of the implementation without departing from the spirit and scope disclosed herein; however, the scope of patent protection for this invention shall still be determined by the scope defined in the appended claims.

Claims

1. A method for extracting dynamic characteristic parameters of an IGBT device, characterized in that, include: Select and traverse the target folder according to different needs to obtain the number of double pulse test waveform files. The double pulse test waveform files refer to the double pulse test waveform files obtained by performing double pulse tests on different types of IGBT devices. The double pulse test waveform files of different types of IGBT devices are placed in different folders. Read a double pulse test waveform file; Identify the physical quantities tested by different test channels in the dual-pulse test waveform file, including the terminal voltage and collector current of the IGBT device, and the terminal voltage and current of the freewheeling diode, and put them into a specified array; The identification of physical quantities tested by different test channels in the dual-pulse test waveform file is achieved by feature matching, including: finding the gate signal of the IGBT device based on the average value of the physical quantities tested by each test channel, then locating four switching action points by crossing the zero point of the gate signal, and then identifying them based on the characteristics of the terminal voltage and collector current of the IGBT device, as well as the terminal voltage and current of the freewheeling diode. The four switching action points include: two turn-on and two turn-off action points. Based on the identified physical quantities, the switching process of the IGBT device in the dual-pulse test waveform file is identified; Based on the identified physical quantities and switching process, the dynamic characteristic parameters of the IGBT device are extracted and the switching loss is calculated. If the double pulse test waveform file is the last double pulse test waveform file in the target folder, then stop reading; otherwise, continue with the step of reading a double pulse test waveform file.

2. The method for extracting dynamic characteristic parameters of IGBT devices according to claim 1, characterized in that, Before identifying the physical quantities tested by different test channels in the double-pulse test waveform file, the method further includes: performing smoothing filtering on the double-pulse test waveform file.

3. The method for extracting dynamic characteristic parameters of IGBT devices according to claim 2, characterized in that, The smoothing and filtering process for the dual-pulse test waveform file includes: The double-pulse test waveform file is subjected to a preset number of mean filtering processes to filter out interference signals while maintaining the original shape of the double-pulse test waveform.

4. The method for extracting dynamic characteristic parameters of IGBT devices according to claim 1, characterized in that, Before extracting the dynamic characteristic parameters of the IGBT device and calculating the switching loss based on the identified physical quantities and switching process, the method further includes: performing data calibration on the dual-pulse test waveform file.

5. The method for extracting dynamic characteristic parameters of IGBT devices according to claim 4, characterized in that, The data calibration of the dual-pulse test waveform file includes: Test data for the calibrated switching process is obtained by subtracting the average value of the probe in the zero-point region from the test data of the identified switching process.

6. The method for extracting dynamic characteristic parameters of IGBT devices according to claim 1, characterized in that, The process of extracting dynamic characteristic parameters of IGBT devices and calculating switching losses based on identified physical quantities and switching processes includes: Based on the identified physical quantities and switching process, calculate the dynamic characteristic parameters according to the definition of dynamic characteristic parameters; Switching losses are calculated using an integral accumulation method.

7. The method for extracting dynamic characteristic parameters of an IGBT device according to any one of claims 1 to 6, characterized in that, The dynamic characteristic parameters include at least one of the following: Activation speed; Shutdown speed; Turn off overvoltage; Switching losses; and Diode reverse recovery parameters.

8. The method for extracting dynamic characteristic parameters of IGBT devices according to claim 1, characterized in that, Also includes: The waveforms corresponding to the range of values ​​taken during the calculation of the dynamic characteristic parameters and switching losses of the IGBT device are stored in the form of images. After the reading stops, the dynamic characteristic parameters and switching losses of the IGBT device are stored in the target folder in .xls format.

9. A device for extracting dynamic characteristic parameters of an IGBT device, characterized in that, include: The acquisition module is used to select and traverse the target folder according to different needs to obtain the number of double pulse test waveform files. The double pulse test waveform files refer to the double pulse test waveform files obtained by performing double pulse tests on different types of IGBT devices. The double pulse test waveform files of different types of IGBT devices are placed in different folders. The reading module is used to read a double-pulse test waveform file. The first identification module is used to identify the physical quantities tested by different test channels in the dual-pulse test waveform file, including the terminal voltage and collector current of the IGBT device, and the terminal voltage and current of the freewheeling diode, and put them into a specified array. The identification of physical quantities tested by different test channels in the dual-pulse test waveform file is achieved by feature matching, including: finding the gate signal of the IGBT device based on the average value of the physical quantities tested by each test channel, then locating four switching action points by crossing the zero point of the gate signal, and then identifying them based on the characteristics of the terminal voltage and collector current of the IGBT device, as well as the terminal voltage and current of the freewheeling diode. The four switching action points include: two turn-on and two turn-off action points. The second identification module is used to identify the switching process of the IGBT device in the double-pulse test waveform file based on the identified physical quantities. The extraction module is used to extract the dynamic characteristic parameters of the IGBT device and calculate the switching loss based on the identified physical quantities and switching process. The judgment module is used to determine whether the double pulse test waveform file is the last double pulse test waveform file in the target folder; if the double pulse test waveform file is the last double pulse test waveform file in the target folder, then reading stops; otherwise, the reading module continues to read the next double pulse test waveform file.

10. A storage medium, characterized in that, The storage medium stores a computer program, which, when executed by one or more processors, implements the method for extracting dynamic characteristic parameters of IGBT devices as described in any one of claims 1 to 8.

11. An electronic device, characterized in that, It includes a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, it implements the method for extracting dynamic characteristic parameters of IGBT devices as described in any one of claims 1 to 8.

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