Organic electroluminescent device and method for producing the same
By introducing thin-film transistor pairs into the OLED screen, the problem of insufficient anti-static capability of the OLED screen is solved, protection under high voltage conditions is achieved, and the packaging reliability of the screen is enhanced.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUAN YEOLIGHT TECH CO LTD
- Filing Date
- 2022-12-12
- Publication Date
- 2026-06-05
AI Technical Summary
OLED screens have limited anti-static capabilities and are easily damaged under high voltage conditions.
Multiple thin-film transistor pairs are introduced into the OLED screen. One end of the thin-film transistor pair is connected to the electrode lead, and the other end is electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device. The instantaneous current is released by the conduction of the thin-film transistor pair or the lead connection to prevent high voltage damage.
It improves the anti-static capability of the OLED screen, prevents damage to local areas of the screen by high voltage, and enhances the packaging reliability of the screen.
Smart Images
Figure CN115768185B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of organic semiconductor technology, specifically to organic electroluminescent devices and their fabrication methods. Background Technology
[0002] OLED (Organic Light-Emitting Diode) is a photoelectric device that emits light through carrier injection and recombination in the emissive layer. Specifically, electrons are injected through a metal cathode and transported to the emissive layer via an electron transport material, while holes are injected through a metal anode and transported to the emissive layer via a hole transport material. Electrons and holes recombine in the emissive layer to form excitons, which then de-emit light. Due to their excellent light emission uniformity, thinness, bendability, flexibility, and stretchability, OLEDs have attracted much attention and are widely used in general lighting and automotive lighting.
[0003] However, OLED screens have limited anti-static capabilities and are easily damaged under high voltage conditions. For example, when a relatively high voltage is applied to the electrode pins of an OLED screen, the screen is easily damaged due to its limited voltage tolerance. Summary of the Invention
[0004] In view of this, embodiments of this application provide an organic electroluminescent device and a method for preparing the same, which can improve the antistatic capability of the organic electroluminescent device.
[0005] To achieve the above objectives, this application adopts the following technical solution:
[0006] In a first aspect, embodiments of this application provide an organic electroluminescent device, comprising: a substrate; a first electrode layer formed on the substrate; an organic light-emitting layer formed on the first electrode layer; a second electrode layer formed on the organic light-emitting layer; a first thin-film transistor layer formed on the second electrode layer; and a second thin-film transistor layer formed on the first thin-film transistor layer. The first thin-film transistor layer includes a plurality of first thin-film transistors, and the second thin-film transistor layer includes a plurality of second thin-film transistors. The plurality of first thin-film transistors and the plurality of second thin-film transistors are connected to form a plurality of interconnected thin-film transistor pairs. One end of each thin-film transistor pair is electrically connected to a first electrode lead in a bonding region, and the other end is electrically connected to the second electrode layer or connected to an external part of the organic electroluminescent device via a lead.
[0007] When a higher voltage is applied to the electrode pins of the OLED screen, the thin-film transistors (TFTs) are connected to the first electrode leads, causing them to conduct. At this time, most of the instantaneous current generated by the higher voltage flows from the TFTs into the second electrode layer, preventing damage to localized areas of the OLED screen. Alternatively, most of the instantaneous current generated by the higher voltage can be connected to the outside of the organic light-emitting device through leads, so that almost no instantaneous current flows into the OLED screen, thus preventing damage to the OLED screen.
[0008] In this embodiment, the thin-film transistor can be either a TFT or an OTFT.
[0009] In some embodiments, the first thin-film transistor layer may include: a first inorganic layer formed on the second electrode layer; a first source / drain layer formed on the first inorganic layer, including a plurality of first source regions and a plurality of first drain regions; a first active layer formed on the first source / drain layer; a first insulating and water-blocking layer formed on the first active layer and covering the entire screen area of the organic electroluminescent device; and a first gate layer formed on the first insulating and water-blocking layer, including a plurality of first gate regions, each first gate region corresponding to a first source region and a first drain region. Both the first inorganic layer and the insulating and water-blocking layer are provided with a plurality of vias for lead passage.
[0010] The material of the first active layer can be organic or inorganic.
[0011] In some embodiments, the second thin-film transistor layer may include: a second inorganic layer formed on the first thin-film transistor layer; a second source / drain layer formed on the second inorganic layer, including a plurality of second source regions and a plurality of second drain regions; a second active layer formed on the second source / drain layer; a second insulating and water-blocking layer formed on the second active layer and covering the entire screen area of the organic electroluminescent device; and a second gate layer formed on the second insulating and water-blocking layer, including a plurality of second gate regions, each second gate region corresponding to a second source region and a second drain region. Both the second inorganic layer and the second insulating and water-blocking layer are provided with a plurality of vias for lead passage.
[0012] The material of the second active layer can be organic or inorganic.
[0013] In this embodiment, the materials of the first active layer and the second active layer can both be organic materials, or both can be inorganic materials, or the first active layer can be an organic material and the second active layer can be an inorganic material, or the first active layer can be an inorganic material and the second active layer can be an organic material.
[0014] In some possible implementations, the second source region, the second gate region, and the first drain region are electrically connected to the first electrode lead of the bonding region, and the second drain region, the first gate region, and the first source region are electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device via leads.
[0015] In some embodiments, the number of layers in the first thin-film transistor layer is the same as the number of layers in the second thin-film transistor layer. In cases where both the first and second thin-film transistor layers are multi-layered, the first and second thin-film transistor layers are stacked sequentially.
[0016] Secondly, embodiments of this application provide a method for fabricating an organic electroluminescent device, comprising: sequentially forming a first electrode layer, an organic light-emitting layer, and a second electrode layer on a substrate; forming a first thin-film transistor layer on the second electrode layer; and forming a second thin-film transistor layer on the first thin-film transistor layer; wherein the first thin-film transistor layer includes a plurality of first thin-film transistors, the second thin-film transistor layer includes a plurality of second thin-film transistors, the plurality of first thin-film transistors and the plurality of second thin-film transistors are connected to form a plurality of interconnected thin-film transistor pairs, one end of each thin-film transistor pair is electrically connected to a first electrode lead of a bonding region, and the other end is electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device via a lead.
[0017] In some embodiments, forming a first thin-film transistor layer on the second electrode layer includes: forming a first inorganic layer on the second electrode layer; forming a first source / drain layer on the first inorganic layer, the first source / drain layer including a plurality of first source regions and a plurality of first drain regions; forming a first active layer on the first source / drain layer; forming a first insulating and water-blocking layer on the first active layer, the first insulating and water-blocking layer covering the entire screen area of the organic electroluminescent device; and forming a first gate layer on the first insulating and water-blocking layer, the first gate layer including a plurality of first gate regions, each first gate region corresponding to a first source region and a first drain region. Both the first inorganic layer and the insulating and water-blocking layer are provided with a plurality of vias for lead passage.
[0018] In some embodiments, forming a second thin-film transistor layer on the first thin-film transistor layer includes: forming a second inorganic layer on the first thin-film transistor layer; forming a second source / drain layer on the second inorganic layer, the second source / drain layer including a plurality of second source regions and a plurality of second drain regions; forming a second active layer on the second source / drain layer; forming a second insulating and water-blocking layer on the second active layer, the second insulating and water-blocking layer covering the entire screen area of the organic electroluminescent device; and forming a second gate layer on the second insulating and water-blocking layer, the second gate layer including a plurality of second gate regions, each second gate region corresponding to a second source region and a second drain region. Both the second inorganic layer and the second insulating and water-blocking layer are provided with a plurality of vias for lead passage.
[0019] The second source region, the second gate region, and the first drain region are electrically connected to the first electrode lead of the bonding region, and the second drain region, the first gate region, and the first source region are electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device through leads. Attached Figure Description
[0020] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0021] Figure 1 This is a schematic diagram of the structure of an organic electroluminescent device provided in an embodiment of this application;
[0022] Figure 2 This is a schematic diagram of the structure of the thin-film transistor layer provided in the embodiments of this application;
[0023] Figure 3 This is a schematic diagram of the connection method of the thin-film transistor pair provided in the embodiments of this application;
[0024] Figure 4 This is an equivalent circuit diagram of the thin-film transistor pair provided in the embodiments of this application;
[0025] Figure 5 This is a schematic diagram of another organic electroluminescent device provided in the embodiments of this application;
[0026] Figure 6 This is a schematic flowchart of the method for fabricating an organic electroluminescent device provided in the embodiments of this application. Detailed Implementation
[0027] The present application will be described more clearly below with reference to specific embodiments. These embodiments will help those skilled in the art to further understand the function of the present application, but do not limit the present application in any way. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present application. These all fall within the protection scope of the present application.
[0028] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.
[0029] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.
[0030] In the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0031] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.
[0032] Furthermore, the term "multiple" mentioned in the embodiments of this application should be interpreted as two or more.
[0033] To make the objectives, technical solutions, and advantages of this application clearer, the following description will be provided in conjunction with the accompanying drawings and specific embodiments.
[0034] OLED screens have limited anti-static capabilities and are easily damaged under high voltage conditions. For example, when a relatively high voltage is applied to the electrode pins of an OLED screen, the instantaneous current flowing through those pins into the screen becomes quite large. Since the anti-static capability of an OLED screen is limited, if the instantaneous current exceeds this capability, the screen will be damaged by a breakdown.
[0035] To address the aforementioned issues, this application provides an organic electroluminescent device. The device includes a first electrode layer, an organic light-emitting layer, and a second electrode layer sequentially disposed on a substrate. A first thin-film transistor layer and a second thin-film transistor layer are sequentially disposed on the second electrode layer. The first thin-film transistor layer contains a plurality of first thin-film transistors, and the second thin-film transistor layer contains a plurality of second thin-film transistors. The plurality of first and second thin-film transistors are connected to form a plurality of thin-film transistor pairs. One end of each thin-film transistor pair is electrically connected to a first electrode lead in a bonding region, and the other end is electrically connected to the second electrode layer or grounded.
[0036] When a higher voltage is applied to the electrode pins of the OLED screen, the thin-film transistors (TFTs) are electrically connected to the first electrode leads, causing them to conduct. At this time, most of the instantaneous current generated by the higher voltage flows from the TFTs into the second electrode layer, creating an equipotential effect across the entire OLED screen and preventing damage to localized areas. Alternatively, most of the instantaneous current generated by the higher voltage can be connected to the outside of the organic light-emitting device via leads, preventing almost no current from flowing into the OLED screen and thus preventing damage.
[0037] Figure 1 A partial structural schematic diagram of an organic electroluminescent device provided in an embodiment of this application is shown. See also... Figure 1 The organic electroluminescent device may include a substrate 100, a first electrode layer 200, an organic light-emitting layer 300, a second electrode layer 400, a first thin-film transistor layer 500, and a second thin-film transistor layer 600.
[0038] A first electrode layer 200 is formed on a substrate 100, an organic light-emitting layer 300 is formed on the first electrode layer 200, and a second electrode layer 400 is formed on the organic light-emitting layer 300. For example, the first electrode layer 200 can be an anode layer, and the second electrode layer 400 can be a cathode layer.
[0039] A first thin-film transistor layer 500 is formed on a second electrode layer 400, and a second thin-film transistor layer 600 is formed on a first thin-film transistor layer 500. The first thin-film transistor layer 500 may contain a plurality of first thin-film transistors (e.g., ...). Figure 1 The dashed frame in the first thin-film transistor layer 500 shown), the second thin-film transistor layer 600 may contain multiple second thin-film transistors (such as...). Figure 1(The dashed frame in the second thin-film transistor layer 600 is shown). The plurality of first thin-film transistors and the plurality of second thin-film transistors correspond one-to-one and are connected to form a plurality of thin-film transistor pairs. One end of each thin-film transistor pair is electrically connected to the first electrode lead of the bonding region, and the other end is electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device through a lead.
[0040] When a high voltage is applied to the first electrode lead, since one end of the thin-film transistor pair is connected to the first electrode lead, the high voltage is applied to the thin-film transistor pair, causing it to conduct. Because the resistance of the thin-film transistor pair is low after conduction, most of the instantaneous current generated by the higher voltage can flow from the thin-film transistor pair into the second electrode layer, preventing damage to localized areas of the OLED screen. Alternatively, most of the instantaneous current generated by the higher voltage can be connected to the outside of the organic light-emitting device through leads, so that almost no instantaneous current flows into the OLED screen, thus preventing damage to the OLED screen.
[0041] In this application embodiment, the transistor can be a TFT (Thin Film Transistor) or an organic thin film transistor (OTFT).
[0042] The structures of the first thin-film transistor layer 500 and the second thin-film transistor layer 600 are described below for the two cases where the thin-film transistor is TFT and OTFT, respectively.
[0043] 1. Structure of the first thin-film transistor layer 500
[0044] In some embodiments, see Figure 2 The first thin-film transistor layer may include: a first inorganic layer 501 formed on the second electrode layer 400; a first source / drain layer 502 formed on the first inorganic layer 501, including a plurality of first source regions S1 and a plurality of first drain regions D1; a first active layer 503 formed on the first source / drain layer 502; a first insulating and water-blocking layer 504 formed on the first active layer 503 and covering the entire screen area of the organic electroluminescent device; and a first gate layer 505 formed on the first insulating and water-blocking layer 504, including a plurality of first gate regions G1, each first gate region G1 corresponding to a first source region S1 and a first drain region D1.
[0045] In this embodiment, since the first insulating water-blocking layer covers the entire screen area of the organic electroluminescent device, the first insulating water-blocking layer can be used as a water-blocking layer, which improves the packaging reliability of the OLED screen while forming a thin film transistor structure.
[0046] In this embodiment, the material of the first active layer 503 can be an organic material or an inorganic material, and there is no limitation on this.
[0047] 2. Structure of the second thin-film transistor layer 600
[0048] In some embodiments, see Figure 2 The second thin-film transistor layer 600 may include: a second inorganic layer 601 formed on the first thin-film transistor layer 500; a second source / drain layer 602 formed on the second inorganic layer 601, including a plurality of second source regions S2 and a plurality of second drain regions D2; a second active layer 603 formed on the second source / drain layer 602; a second insulating and water-blocking layer 604 formed on the second active layer 603 and covering the entire screen area of the organic electroluminescent device; and a second gate layer 605 formed on the second insulating and water-blocking layer 604, including a plurality of second gate regions G2, each second gate region G2 corresponding to a second source region S2 and a second drain region D2.
[0049] In this embodiment, since the second insulating water-blocking layer covers the entire screen area of the organic electroluminescent device, the second insulating water-blocking layer can be used as a water-blocking layer, further improving the packaging reliability of the OLED screen on the basis of forming a thin film transistor structure.
[0050] In this embodiment, the material of the second active layer 603 can be an organic material or an inorganic material, and there is no limitation on this.
[0051] For example, the materials of the first active layer 503 and the second active layer 603 can both be organic materials, or both can be inorganic materials, or the first active layer 503 can be an organic material and the second active layer 603 can be an inorganic material, or the first active layer 503 can be an inorganic material and the second active layer 603 can be an organic material.
[0052] See Figure 3 The connection relationship of the thin film transistor pair is as follows: the second source region S2, the second gate region G2 and the first drain region D1 are electrically connected to the first electrode lead of the bonding region, and the second drain region D2, the first gate region G1 and the first source region S1 are electrically connected to the second electrode layer 400 or connected to the outside of the organic electroluminescent device through leads.
[0053] For example, through holes can be provided in the first inorganic layer 501, the first insulating and water-blocking layer 504, the second inorganic layer 601, and the second insulating and water-blocking layer 604. These through holes are used for lead wires to pass through, thereby achieving the following: Figure 3The electrical connection method is shown. The positions of the through holes on the first inorganic layer 501, the first insulating and water-blocking layer 504, the second inorganic layer 601, and the second insulating and water-blocking layer 604 can be the same or different; there is no limitation on this, and it can achieve the following: Figure 3 The electrical connection shown is sufficient.
[0054] In this embodiment, the position of the first source region S1 corresponds to the position of the second drain region D2, and the position of the first drain region D1 corresponds to the position of the second source region S2, thereby facilitating the setting of leads.
[0055] For example, such as Figure 3 As shown, in the direction perpendicular to the second electrode layer 400, the first source region S1 and the second drain region D2 can be located on a straight line, and the first drain region D1 and the second source region S2 can be located on a straight line.
[0056] The equivalent circuit diagram of the thin-film transistor pair is as follows: Figure 4 As shown, the gate of the second thin-film transistor is connected to the data electrode Data of the organic electroluminescent device. When a high voltage is introduced into Data, the gate is at a high voltage, the second thin-film transistor is turned on, and the first thin-film transistor is turned on, thereby realizing the conduction of the thin-film transistor.
[0057] It should be noted that, Figure 3 This is merely one arrangement of thin-film transistor pairs. Based on the core idea of this application, those skilled in the art can arrange other forms of thin-film transistor pairs to achieve the purpose of "turning on the thin-film transistor pair when a high voltage is input to the gate electrode (i.e., the gate), so that most of the instantaneous current generated by the higher voltage can flow from the thin-film transistor pair into the second electrode layer, or so that most of the instantaneous current generated by the higher voltage can be connected to the outside of the organic electroluminescent device through leads, thereby preventing the higher voltage from damaging the OLED screen". All of these are within the protection scope of this application.
[0058] In one scenario, each light-emitting area or pixel unit of the OLED screen can correspond to at least one pair of thin-film transistors, and the pairs of thin-film transistors can be evenly arranged in the OLED screen area.
[0059] In this embodiment, the Gate electrode of the thin-film transistor pair can be directly electrically connected to the first electrode lead or auxiliary electrode lead of the bonding region, and each auxiliary electrode lead can be connected to the Gate electrodes of multiple thin-film transistor pairs.
[0060] In this embodiment, the Com electrode of each thin-film transistor pair can be connected to an external part of the organic electroluminescent device via its own independent lead, such as to an external circuit outside the organic electroluminescent device, a ground point outside the organic electroluminescent device, or another location outside the organic electroluminescent device, as long as it can release high-voltage electrical energy. Alternatively, the Com electrodes of each thin-film transistor pair can be connected to an external part of the organic electroluminescent device via the same lead; this embodiment is not limited in this respect.
[0061] In this embodiment, the number of layers in the first thin-film transistor layer 500 is the same as the number of layers in the second thin-film transistor layer 600, which is one or more layers. When both the first thin-film transistor layer 500 and the second thin-film transistor layer 600 have multiple layers, the first thin-film transistor layer 500 and the second thin-film transistor layer 600 are stacked sequentially.
[0062] For example, such as Figure 5 As shown, the first thin-film transistor layer 500 has two layers and the second thin-film transistor layer 600 has two layers.
[0063] See Figure 5 Taking an example where both the first thin-film transistor layer 500 and the second thin-film transistor layer 600 are two layers, the first thin-film transistor layer 500 is disposed on the second electrode layer 400, and the second thin-film transistor layer 600 is disposed on the first thin-film transistor layer 500. The plurality of first thin-film transistors in the first thin-film transistor layer 500 and the plurality of second thin-film transistors in the first thin-film transistor layer 600 form a plurality of thin-film transistor pairs.
[0064] Subsequently, a second layer of first thin-film transistors 500 is disposed on the first layer of second thin-film transistors 600, and a second layer of second thin-film transistors 600 is disposed on the second layer of first thin-film transistors 500. The plurality of first thin-film transistors in the second layer of first thin-film transistors 500 and the plurality of second thin-film transistors in the second layer of second thin-film transistors 600 form a plurality of thin-film transistor pairs.
[0065] For example, the thin-film transistor pairs in the first thin-film transistor layer 500 and the first thin-film transistor layer 600, and the thin-film transistors in the second thin-film transistor layer 500 and the second thin-film transistor layer 600, can all be electrically connected to the second electrode layer 400, or can all be connected to the outside of the organic electroluminescent device through leads, or a portion of the thin-film transistor pairs can be electrically connected to the second electrode layer 400, and a portion of the thin-film transistor pairs can be connected to the outside of the organic electroluminescent device through leads; there is no limitation on this.
[0066] By constructing multiple layers of first thin-film transistor (TFT) layers 500 and second TFT layers 600, the number of parallel TFT pairs can be increased, reducing the current flowing through each TFT pair and minimizing damage to the data lines connected to each TFT pair, thereby further improving the anti-static capability of the OLED screen. Furthermore, since both the first TFT layer 500 and the second TFT layer 600 contain insulating and water-blocking layers, constructing multiple layers of first TFT layers 500 and second TFT layers 600 can also improve the packaging reliability of the OLED screen.
[0067] Figure 6 A schematic flowchart illustrating the fabrication method of the organic electroluminescent device provided in this application embodiment is shown. See also... Figure 6 The fabrication method of the above-mentioned organic electroluminescent device may include the following steps:
[0068] Step 701: A first electrode layer, an organic light-emitting layer, and a second electrode layer are sequentially formed on the substrate.
[0069] Step 702: Form a first thin-film transistor layer on the second electrode layer.
[0070] Step 703: Form a second thin-film transistor layer on the first thin-film transistor layer.
[0071] The first thin-film transistor layer contains a plurality of first thin-film transistors, and the second thin-film transistor layer contains a plurality of second thin-film transistors. The plurality of first thin-film transistors and the plurality of second thin-film transistors are connected to form a plurality of thin-film transistor pairs. One end of each thin-film transistor pair is electrically connected to the first electrode lead of the bonding region, and the other end is electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device through a lead.
[0072] In some embodiments, the process of forming a first thin-film transistor layer on the second electrode layer may include: forming a first inorganic layer on the second electrode layer; forming a first source / drain layer on the first inorganic layer, the first source / drain layer including a plurality of first source regions and a plurality of first drain regions; forming a first active layer on the first source / drain layer; forming a first insulating and water-blocking layer on the first active layer, the first insulating and water-blocking layer covering the entire screen area of the organic electroluminescent device; and forming a first gate layer on the first insulating and water-blocking layer, the first gate layer including a plurality of first gate regions, each first gate region corresponding to a first source region and a first drain region. Both the first inorganic layer and the insulating and water-blocking layer are provided with a plurality of vias for lead passage.
[0073] For example, after forming the second electrode layer, a first inorganic layer can be fabricated on the second electrode layer using at least one of PECVD, ALD, and PVD. The thickness of the first inorganic layer can be 10 nanometers to 2 micrometers, and multiple vias are provided at predetermined positions in the first inorganic layer. Then, a first source / drain layer is fabricated on the first inorganic layer using methods such as printing or evaporation, resulting in multiple first source regions and multiple first drain regions. Next, a first active layer is fabricated on the first source / drain layer using methods such as printing or evaporation. Then, a first insulating and water-blocking layer is fabricated on the first active layer using at least one of PECVD, ALD, and PVD, and multiple vias are provided at predetermined positions in the first insulating and water-blocking layer. Next, a first gate layer is fabricated on the first insulating and water-blocking layer using methods such as printing or evaporation, resulting in multiple first gate regions. This achieves the fabrication of a first thin-film transistor layer on the second electrode layer.
[0074] In some embodiments, the process of forming a second thin-film transistor layer on the first thin-film transistor layer may include: forming a second inorganic layer on the first thin-film transistor layer; forming a second source / drain layer on the second inorganic layer, the second source / drain layer including a plurality of second source regions and a plurality of second drain regions; forming a second active layer on the second source / drain layer; forming a second insulating and water-blocking layer on the second active layer, the second insulating and water-blocking layer covering the entire screen area of the organic electroluminescent device; and forming a second gate layer on the second insulating and water-blocking layer, the second gate layer including a plurality of second gate regions, each second gate region corresponding to a second source region and a second drain region. During the fabrication of the second inorganic layer and the second insulating and water-blocking layer, a plurality of vias for lead passage are generated at predetermined locations.
[0075] For example, after forming the first thin-film transistor layer, a second inorganic layer can be fabricated on the first thin-film transistor layer using at least one of PECVD, ALD, and PVD. The thickness of the second inorganic layer can be 10 nanometers to 2 micrometers, and multiple vias are provided at predetermined positions in the second inorganic layer. Then, a second source / drain layer is fabricated on the second inorganic layer using methods such as printing or evaporation to obtain multiple second source regions and multiple second drain regions. Next, a second active layer is fabricated on the second source / drain layer using methods such as printing or evaporation. Then, a second insulating and water-blocking layer is fabricated on the second active layer using at least one of PECVD, ALD, and PVD, and multiple vias are provided at predetermined positions in the first insulating and water-blocking layer. Next, a second gate layer is fabricated on the second insulating and water-blocking layer using methods such as printing or evaporation to obtain multiple second gate regions. This achieves the fabrication of a second thin-film transistor layer on the first thin-film transistor layer.
[0076] In this embodiment, through vias formed on the first inorganic layer, the first insulating water-blocking layer, the second inorganic layer, and the second insulating water-blocking layer, electrical connections can be made between the second source region, the second gate region, and the first drain region and the first electrode lead of the bonding region. Additionally, the second drain region, the first gate region, and the first source region can be electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device via leads. Exemplarily, the positions of the vias formed on the first inorganic layer, the first insulating water-blocking layer, the second inorganic layer, and the second insulating water-blocking layer can be the same or different, and are not limited thereto, enabling the following... Figure 3 The electrical connection shown is sufficient.
[0077] In this embodiment, the first thin-film transistor layer and the second thin-film transistor layer have the same structure, and the thickness and fabrication method of each layer can be the same or different.
[0078] The following explanation uses the first and second inorganic layers as examples. For instance, different thicknesses of the first and second inorganic layers can be prepared using different methods such as PECVD, ALD, and PVD. Alternatively, the same thickness of the first and second inorganic layers can be prepared using the same method in PECVD, ALD, and PVD. Similarly, the first and second source / drain layers, the first and second insulating / water-blocking layers, the first and second active layers, and the first and second gate layers can all be prepared with reference to the first and second inorganic layers, but their thicknesses and preparation methods can be the same or different.
[0079] This application also provides an electronic device that includes any of the above-mentioned organic electroluminescent devices and has the beneficial effects of the above-mentioned organic electroluminescent devices, which will not be repeated here.
[0080] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.
[0081] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.
Claims
1. An organic electroluminescent device, characterized in that, include: Base; A first electrode layer is formed on the substrate; An organic light-emitting layer is formed on the first electrode layer; A second electrode layer is formed on the organic light-emitting layer; A first thin-film transistor layer is formed on the second electrode layer; A second thin-film transistor layer is formed on the first thin-film transistor layer; The first thin-film transistor layer includes a plurality of first thin-film transistors, and the second thin-film transistor layer includes a plurality of second thin-film transistors. The plurality of first thin-film transistors and the plurality of second thin-film transistors are connected to form a plurality of interconnected thin-film transistor pairs. One end of each thin-film transistor pair is electrically connected to the first electrode lead of the bonding region, and the other end is electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device through a lead. The first thin-film transistor layer includes a first source / drain layer and a first gate layer. The first source / drain layer includes a plurality of first source regions and a plurality of first drain regions. The first gate layer includes a plurality of first gate regions. The second thin-film transistor layer includes a second source / drain layer and a second gate layer. The second source / drain layer includes a plurality of second source regions and a plurality of second drain regions. The second gate layer includes a plurality of second gate regions. The second source region, the second gate region, and the first drain region are electrically connected to the first electrode lead of the bonding region, and the second drain region, the first gate region, and the first source region are electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device via leads.
2. The organic electroluminescent device according to claim 1, characterized in that, The first thin-film transistor layer further includes: A first inorganic layer is formed on the second electrode layer; The first source / drain layer is formed on the first inorganic layer; The first active layer is formed on the first source / drain layer; The first insulating and water-blocking layer is formed on the first active layer and covers the entire screen area of the organic electroluminescent device; wherein, both the first inorganic layer and the insulating and water-blocking layer are provided with multiple through holes for the lead wires to pass through. The first gate layer is formed on the first insulating water-blocking layer, and each first gate region corresponds to a first source region and a first drain region.
3. The organic electroluminescent device according to claim 2, characterized in that, The first active layer is made of organic or inorganic materials.
4. The organic electroluminescent device according to claim 2, characterized in that, The second thin-film transistor layer further includes: A second inorganic layer is formed on the first thin-film transistor layer; The second source / drain layer is formed on the second inorganic layer; The second active layer is formed on the second source / drain layer; The second insulating and water-blocking layer is formed on the second active layer and covers the entire screen area of the organic electroluminescent device; wherein, both the second inorganic layer and the second insulating and water-blocking layer are provided with multiple through holes for the lead wires to pass through. The second gate layer is formed on the second insulating water-blocking layer, and each second gate region corresponds to a second source region and a second drain region.
5. The organic electroluminescent device according to claim 4, characterized in that, The material of the second active layer is either organic or inorganic.
6. The organic electroluminescent device according to claim 1, characterized in that, The number of layers in the first thin-film transistor layer is the same as the number of layers in the second thin-film transistor; When the number of layers of the first thin-film transistor layer and the number of layers of the second thin-film transistor layer are multiple, the first thin-film transistor layer and the second thin-film transistor layer are stacked sequentially.
7. A method for fabricating an organic electroluminescent device, characterized in that, include: A first electrode layer, an organic light-emitting layer, and a second electrode layer are sequentially formed on a substrate; A first thin-film transistor layer is formed on the second electrode layer; A second thin-film transistor layer is formed on the first thin-film transistor layer; The first thin-film transistor layer includes a plurality of first thin-film transistors, and the second thin-film transistor layer includes a plurality of second thin-film transistors. The plurality of first thin-film transistors and the plurality of second thin-film transistors are connected to form a plurality of interconnected thin-film transistor pairs. One end of each thin-film transistor pair is electrically connected to the first electrode lead of the bonding region, and the other end is electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device through a lead. The first thin-film transistor layer includes a first source / drain layer and a first gate layer. The first source / drain layer includes a plurality of first source regions and a plurality of first drain regions. The first gate layer includes a plurality of first gate regions. The second thin-film transistor layer includes a second source / drain layer and a second gate layer. The second source / drain layer includes a plurality of second source regions and a plurality of second drain regions. The second gate layer includes a plurality of second gate regions. The second source region, the second gate region, and the first drain region are electrically connected to the first electrode lead of the bonding region, and the second drain region, the first gate region, and the first source region are electrically connected to the second electrode layer or connected to the outside of the organic electroluminescent device via leads.
8. The method for preparing the organic electroluminescent device according to claim 7, characterized in that, The process of forming a first thin-film transistor layer on the second electrode layer includes: A first inorganic layer is formed on the second electrode layer; The first source / drain layer is formed on the first inorganic layer; A first active layer is formed on the first source / drain layer; A first insulating and water-blocking layer is formed on the first active layer, and the first insulating and water-blocking layer covers the entire screen area of the organic electroluminescent device; wherein, both the first inorganic layer and the insulating and water-blocking layer are provided with multiple through holes for the lead wires to pass through. The first gate layer is formed on the first insulating water-blocking layer, and each first gate region corresponds to a first source region and a first drain region.
9. The method for preparing the organic electroluminescent device according to claim 8, characterized in that, The step of forming a second thin-film transistor layer on the first thin-film transistor layer includes: A second inorganic layer is formed on the first thin-film transistor layer; The second source / drain layer is formed on the second inorganic layer; A second active layer is formed on the second source / drain layer; A second insulating and water-blocking layer is formed on the second active layer, and the second insulating and water-blocking layer covers the entire screen area of the organic electroluminescent device; wherein, both the second inorganic layer and the second insulating and water-blocking layer are provided with multiple through holes for the lead wires to pass through; The second gate layer is formed on the second insulating water-blocking layer, and each second gate region corresponds to a second source region and a second drain region.