Light sensor

Abstract

A photosensor includes a substrate, a gate line, a data line, a thin film transistor, a light sensing element, a common electrode line, a first color resist, and a light conversion material layer. The gate line is over the substrate. The data line is over the substrate. A gate of the thin film transistor is electrically connected to the gate line. A drain of the thin film transistor is electrically connected to the data line. A lower electrode of the light sensing element is electrically connected to a source of the thin film transistor. The common electrode line is over the substrate and is electrically connected to an upper electrode of the light sensing element. The first color resist is over the thin film transistor and, as viewed from above, the first color resist surrounds the light sensing element. The light conversion material layer is over the first color resist.

Description

Technical Field

[0001] This invention relates to an optical sensor. Background Technology

[0002] Optical sensors are widely used in electronic devices such as smartphones, laptops, and tablets. In addition, they are also used in medical diagnostic tools. For example, an X-ray sensor configured to receive X-rays can convert X-rays passing through human tissue into visual images. How to develop an optical sensor that can improve the collimation of visible light in the optical sensing element to significantly improve image quality is one of the problems that the industry urgently needs to invest research and development resources to solve. Summary of the Invention

[0003] In view of this, one object of the present invention is to provide an optical sensor that can solve the above-mentioned problems.

[0004] To achieve the above objectives, according to one embodiment of the present invention, a light sensor includes a substrate, a gate line, a data line, a thin-film transistor, a light-sensing element, a common electrode line, a first color resist, and a light conversion material layer. The gate line is located above the substrate. The data line is located above the substrate. The gate of the thin-film transistor is electrically connected to the gate line. The drain of the thin-film transistor is electrically connected to the data line. The lower electrode of the light-sensing element is electrically connected to the source of the thin-film transistor. The common electrode line is located above the substrate and is electrically connected to the upper electrode of the light-sensing element. The first color resist is located above the thin-film transistor and, viewed from above, surrounds the light-sensing element. The light conversion material layer is located on the first color resist.

[0005] In one or more embodiments of the present invention, the first color resist is a red photoresist.

[0006] In one or more embodiments of the present invention, the first color resist is a blue photoresist.

[0007] In one or more embodiments of the present invention, the light conversion material layer comprises thallium (Tl)-doped cesium iodide (CsI) material.

[0008] In one or more embodiments of the present invention, the light conversion material layer is configured to convert X-rays into visible light in the wavelength range between 500 nanometers and 600 nanometers.

[0009] In one or more embodiments of the present invention, the first color resist has an average transmittance of less than 50% for visible light in the wavelength range.

[0010] In one or more embodiments of the present invention, the upper surface of the light conversion material layer directly above the photosensitive element is lower than the upper surface of the light conversion material layer directly above the first color filter.

[0011] In one or more embodiments of the present invention, the upper surface of the light conversion material layer directly above the photosensitive element is higher than the upper surface of the light conversion material layer directly above the first color filter.

[0012] In one or more embodiments of the present invention, the photosensor further includes a transparent organic protective layer disposed between the light conversion material layer and the photosensing element.

[0013] In one or more embodiments of the present invention, the refractive index of the transparent organic protective layer is greater than the refractive index of the first color resist.

[0014] In one or more embodiments of the present invention, the transparent organic protective layer is at least partially located directly above the photosensitive element and flush with the upper surface of the first color resist.

[0015] In one or more embodiments of the present invention, the transparent organic protective layer has a first portion located directly above the first color resist and a second portion located directly above the photosensitive element.

[0016] In one or more embodiments of the present invention, the optical sensor further includes an inorganic protective layer disposed between the first color resist and the transparent organic protective layer.

[0017] In one or more embodiments of the present invention, the refractive index of the inorganic protective layer is greater than that of the transparent organic protective layer.

[0018] In one or more embodiments of the invention, the light sensor further includes a second color resist located at least partially above the light sensing element, the second color resist having an average transmittance of greater than 90% for visible light in the wavelength range between 500 nm and 600 nm.

[0019] In summary, in the optical sensor of the present invention, because the optical sensor includes a light conversion material layer, X-rays incident on the optical sensor can be converted into visible light in the wavelength range between approximately 500 nanometers and approximately 600 nanometers. In the optical sensor of the present invention, because the first color resist is located above the thin-film transistor and surrounds the photosensitive element in a top view, the collimation of the visible light converted by the light conversion material layer entering the photosensitive element is improved. In the optical sensor of the present invention, because the first and second color resists are semi-transparent, the manufacturer can more easily repair damaged circuits using lasers. With the optical sensor of the present invention, the collimation of visible light entering the photosensitive element can be improved to enhance image quality and facilitate circuit repair.

[0020] The above description is only used to illustrate the problem to be solved by the present invention, the technical means to solve the problem, and the effects produced, etc. The specific details of the present invention will be described in detail in the following embodiments and related drawings. Attached Figure Description

[0021] To make the above and other objects, features, advantages and embodiments of the present invention more apparent and understandable, the accompanying drawings are described below:

[0022] Figure 1 This is a top view of an optical sensor according to an embodiment of the present invention;

[0023] Figure 2 This is a cross-sectional view of an optical sensor according to an embodiment of the present invention;

[0024] Figure 3 This is a top view of an optical sensor according to an embodiment of the present invention;

[0025] Figure 4 This is a cross-sectional view of an optical sensor according to an embodiment of the present invention;

[0026] Figure 5 This is a top view of an optical sensor according to an embodiment of the present invention;

[0027] Figure 6 This is a cross-sectional view of an optical sensor according to an embodiment of the present invention;

[0028] Figure 7 This is a cross-sectional view of an optical sensor according to an embodiment of the present invention;

[0029] Figure 8 This is a cross-sectional view of an optical sensor according to an embodiment of the present invention;

[0030] Figure 9 This is a cross-sectional view of an optical sensor according to an embodiment of the present invention;

[0031] Figure 10 This is a cross-sectional view of an optical sensor according to an embodiment of the present invention;

[0032] Figure 11 This is a cross-sectional view of an optical sensor according to an embodiment of the present invention;

[0033] Figure 12 This is a top view of a laser-based optical sensor repair according to an embodiment of the present invention.

[0034] Figure 13 This is a cross-sectional view of a laser-based optical sensor repair according to an embodiment of the present invention.

[0035] Symbol Explanation

[0036] 100, 100A, 100B, 100C, 100D, 100E, 100F, 100R: Optical Sensors

[0037] 110: Thin-film transistor

[0038] 120: Photosensitive element

[0039] 121: PIN diode

[0040] 122: Upper electrode

[0041] 123: Lower electrode

[0042] 130: First color resist

[0043] 130G: Second color resist

[0044] 130a, 140a, 140b, 150a: Upper surface

[0045] 140: Light conversion material layer

[0046] 150: Transparent organic protective layer

[0047] 160: Inorganic protective layer

[0048] AS: Channel layer

[0049] BP1, BP2, BP3, BP4: Barrier Layers

[0050] G: Gate

[0051] GSN: Gate Insulating Layer

[0052] I-I',II-II',III-III',IV-IV',V-V',VI-VI': Section lines

[0053] L: Visible light

[0054] LS: Laser

[0055] M1: Gate line

[0056] M2: Source / Drain Region

[0057] M2D: Drain

[0058] M2S: Source

[0059] M3: Data cable

[0060] M4: Common electrode wire

[0061] O,O BP1 Opening

[0062] PL: Protective layer

[0063] P LS :path

[0064] PV: Passivation layer

[0065] S:Substrate Detailed Implementation

[0066] The following describes several embodiments of the present invention with reference to the accompanying drawings. For clarity, many practical details will be described in the following description. However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not essential. Furthermore, for the sake of simplicity, some conventional structures and elements will be shown in the drawings in a simple schematic manner. The same reference numerals will be used to denote the same or similar elements in all the drawings.

[0067] In the accompanying drawings, the thicknesses of layers, films, panels, regions, etc., are enlarged for clarity. Throughout the specification, the same reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another element, it may be directly on or connected to the other element, or intermediate elements may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected" to another element, no intermediate elements are present. As used herein, "connection" can refer to a physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may refer to the presence of other elements between two elements.

[0068] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or part from another. Therefore, "first element," "component," "region," "layer," or "part" discussed below may be referred to as a second element, component, region, layer, or part without departing from the teachings of this document.

[0069] The terminology used herein is for the purpose of describing particular embodiments only and is not restrictive. As used herein, unless the content clearly indicates otherwise, the singular forms "a," "an," and "the" are intended to include the plural forms, including "at least one." "Or" means "and / or." As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It should also be understood that, when used in this specification, the terms "comprising" and / or "comprising" specify the presence of the stated features, areas, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components, and / or combinations thereof.

[0070] Furthermore, relative terms such as "below" or "bottom" and "above" or "top" may be used herein to describe the relationship between one element and another, as illustrated in the figures. It should be understood that relative terms are intended to include different orientations of the device beyond those shown in the figures. For example, if a device in one figure is flipped, an element described as being "below" the other element will be oriented "above" the other element. Thus, the exemplary term "below" can include both "below" and "above" orientations, depending on the specific orientation of the figure. Similarly, if a device in one figure is flipped, an element described as being "below" or "under" the other element will be oriented "above" the other element. Thus, the exemplary term "below" or "under" can include both "above" and "below" orientations.

[0071] As used herein, “about,” “approximately,” or “substantially” includes the value and the average value within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and a particular number of errors associated with the measurement (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations of the value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the use of “about,” “approximately,” or “substantially” herein may be chosen based on the optical, etched, or other properties to select a more acceptable range of deviations or standard deviations, and may not require a single standard deviation to apply to all properties.

[0072] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and this invention, and will not be interpreted as having idealized or overly formal meanings unless expressly defined herein.

[0073] Please refer to Figure 1 . Figure 1 This is a top view of a light sensor 100 according to an embodiment of the present invention. Figure 1 As shown, in this embodiment, the light sensor 100 includes a thin-film transistor 110, a light-sensing element 120, a first color resist 130, a gate line M1, a source / drain region M2, a data line M3, a common electrode line M4, and an opening O. BP1Thin-film transistor 110 includes a gate G. The gate G of thin-film transistor 110 is connected to gate line M1. Photosensitive element 120 further includes a PIN diode 121, an upper electrode 122, and a lower electrode 123. Data line M3 is also connected to thin-film transistor 110. Common electrode line M4 is connected to photosensitive element 120. In some embodiments, data line M3 is parallel to common electrode line M4, and gate line M1 is perpendicular to data line M3 and common electrode line M4. Figure 1 Viewed from above, the first color resist 130 surrounds the photosensing element 120 and covers the thin-film transistor 110. The specific structure of the photosensor 100 will be described in more detail below. In some embodiments, the photosensing element 120 may be a photodiode.

[0074] Please refer to Figure 2 . Figure 2 According to an embodiment of the present invention, based on Figure 1 A cross-sectional view of the optical sensor 100 along section line I-I'. (See attached image.) Figure 2 As shown, in this embodiment, the light sensor 100 includes a substrate S, a thin-film transistor 110, a light-sensing element 120, a first color resist 130, a light conversion material layer 140, a transparent organic protective layer 150, a gate line M1, a source / drain region M2, a data line M3, and a common electrode line M4. Figure 2 As shown, the thin-film transistor 110 includes a gate G, a gate insulating layer GSN, a source / drain region M2, and a channel layer AS. In some embodiments, the gate insulating layer GSN covers the substrate S and the gate G. In some embodiments, the channel layer AS is located on the gate insulating layer GSN. Figure 2 As shown, the source / drain region M2 includes a source M2S and a drain M2D. In some embodiments, the source M2S and drain M2D are located on the channel layer AS. Figure 2 As shown, the photosensitive element 120 includes a PIN diode 121, an upper electrode 122, and a lower electrode 123. The upper electrode 122 is located on the PIN diode 121. The lower electrode 123 is disposed below the PIN diode 121 and electrically connected to the source M2S. The data line M3 is located above the substrate S and electrically connected to the drain M2D. The common electrode line M4 is located above the substrate S and electrically connected to the upper electrode 122.

[0075] Please continue to refer to this. Figure 2 .like Figure 2 As shown, in this embodiment, the transparent organic protective layer 150 is located above the thin-film transistor 110 and the photosensing element 120. The first color resist 130 is located above the thin-film transistor 110 and has an opening O. In some embodiments, such as Figure 2As shown, the first color resist 130 is located on the transparent organic protective layer 150. (As indicated...) Figure 2 As shown, opening O corresponds to the photosensing element 120. A light conversion material layer 140 is located on the first color resist 130 and fills opening O. Figure 2 As shown, the first color resist 130 has an upper surface 130a, and the transparent organic protective layer 150 has an upper surface 150a. In some embodiments, such as Figure 2 As shown, the upper surface 130a of the first color resist 130 is higher than the upper surface 150a of the transparent organic protective layer 150.

[0076] In some embodiments, the PIN diode 121 comprises amorphous silicon. In embodiments where the PIN diode 121 comprises amorphous silicon, since the amorphous silicon in the PIN diode 121 has a superior photoelectric conversion efficiency for light (e.g., green light) in the wavelength range between about 500 nm and about 600 nm, the light conversion material layer 140 can be configured to convert X-rays into visible light L in the wavelength range between about 500 nm and about 600 nm. In some embodiments, the visible light L is green light. In some embodiments, the first color resist 130 can be a semi-transparent color resist, such as a red photoresist or a blue photoresist. In some embodiments, the first color resist 130 has an average transmittance of less than about 50% for visible light L (e.g., green light) in the wavelength range between about 500 nm and about 600 nm. In some embodiments, the material of the light conversion material layer 140 can be, for example, thallium (Tl)-doped cesium iodide (CsI) or other similar materials.

[0077] With the aforementioned structural configuration, when X-rays from the outside are incident on the light sensor 100, the light conversion material layer 140 converts the X-rays into visible light L. Visible light L passing through the first color filter 130 is absorbed by the first color filter 130 and cannot reach the photosensitive element 120 located below the first color filter 130. Visible light L passing through the opening O can reach the photosensitive element 120. After receiving the visible light L, the photosensitive element 120 generates a current through the PIN diode 121. This current flows from the photosensitive element 120 to the thin-film transistor 110, and then through the thin-film transistor 110 to the data line M3. Therefore, the light sensor 100, which has a first color filter 130 corresponding to the opening O of the photosensitive element 120, can increase the collimation of the visible light L received by the photosensitive element 120, thereby improving image quality.

[0078] In some embodiments, the substrate S may be made of, for example, glass or other similar materials. In some embodiments, the gate insulating layer GSN may be made of, for example, silicon nitride (Si). x N yIn some embodiments, the channel layer AS may be made of, for example, amorphous silicon or other similar materials. In some embodiments, the transparent organic protective layer 150 may be made of, for example, perfluoroalkoxy (PFA) or other similar materials.

[0079] In some embodiments, the light conversion material layer 140 is formed by, for example, vapor deposition or other similar methods.

[0080] In some implementations, such as Figure 2 As shown, the optical sensor 100 further includes a barrier layer BP1, a barrier layer BP2, a barrier layer BP3, a barrier layer BP4, a passivation layer PV, and a protective layer PL. The barrier layers BP1, BP2, BP3, and BP4 are configured as insulating layers located between the metal layer and the semiconductor layer. Figure 2 As shown, in some embodiments, the barrier layer BP1 is located between the gate insulating layer GSN and the photosensing element 120. In some embodiments, the barrier layer BP1 has an opening O. BP1 A PIN diode 121 is formed thereon. In some embodiments, a barrier layer BP2 is located between the thin-film transistor 110 and the data line M3, and between the photosensitive element 120 and the common electrode line M4. In some embodiments, a barrier layer BP3 is located between the data line M3 and the transparent organic protective layer 150, and between the photosensitive element 120 and the common electrode line M4. In some embodiments, a barrier layer BP4 is located between the data line M3 and the transparent organic protective layer 150, and between the common electrode line M4 and the transparent organic protective layer 150. A passivation layer PV is configured to make the surface of the metal layer less susceptible to oxidation, thereby delaying the corrosion of the metal layer. In some embodiments, such as Figure 2 As shown, the passivation layer PV is located between the thin-film transistor 110 and the data line M3, and between the photosensitive element 120 and the common electrode line M4. A protective layer PL is configured to protect the thin-film transistor 110 and the photosensitive element 120 located beneath it. In some embodiments, the protective layer PL is located between the thin-film transistor 110 and the data line M3, and between the photosensitive element 120 and the common electrode line M4.

[0081] Please refer to Figure 3 . Figure 3 This is a top view of a light sensor 100A according to an embodiment of the present invention. Figure 3 As shown, in this embodiment, the light sensor 100A includes a thin-film transistor 110, a light-sensing element 120, a first color resist 130, a gate line M1, a data line M3, a common electrode line M4, and a second color resist 130G. (The last sentence appears to be incomplete and possibly refers to a different implementation.) Figure 3Viewed from above, the first color resist 130 surrounds the photosensing element 120 and covers the thin-film transistor 110. The second color resist 130G covers the photosensing element 120. The specific structure of the light sensor 100A will be described in more detail below.

[0082] Please refer to Figure 4 . Figure 4 According to an embodiment of the present invention, based on Figure 3 Cross-sectional views of the optical sensor 100A along sections II-II' and III-III'. (See attached diagram.) Figure 4 As shown, the structural configuration of the light sensor 100A is generally similar to that of the light sensor 100. The difference between the light sensor 100A and the light sensor 100A is that the light sensor 100A further includes a second color resist 130G, which is at least partially located directly above the light sensing element 120, while the light sensor 100A does not include a transparent organic protective layer 150.

[0083] Please continue to refer to this. Figure 4 .like Figure 4 As shown, in some embodiments, the first color resist 130 is located above the thin-film transistor 110 and has an opening O. For example... Figure 4 As shown, opening O corresponds to the photosensing element 120. In some embodiments, such as Figure 4 As shown, the second color resist 130G is located in the opening O of the first color resist 130. In some embodiments, the material of the second color resist 130G may be a green photoresist. In some embodiments, the second color resist 130G has an average transmittance of more than about 90% for visible light L (e.g., green light) in the wavelength range between about 500 nm and about 600 nm.

[0084] With the aforementioned structural configuration, when X-rays from the outside are incident on the light sensor 100A, the light conversion material layer 140 converts the X-rays into visible light L. Visible light L passing through the first color resist 130 is absorbed by the first color resist 130 and cannot reach the photosensitive element 120 located below the first color resist 130. Visible light L passing through the second color resist 130G can bypass the second color resist 130G and reach the photosensitive element 120. After receiving the visible light L, the photosensitive element 120 generates a current through the PIN diode 121. This current flows from the photosensitive element 120 to the thin-film transistor 110, and then through the thin-film transistor 110 to the data line M3. Therefore, the light sensor 100A, equipped with the first color resist 130 and the second color resist 130G located at least partially above the photosensitive element 120, can increase the collimation of the visible light L received by the photosensitive element 120, thereby improving image quality.

[0085] Please refer to Figure 5 . Figure 5 This is a top view of a light sensor 100 and a light sensor 100R according to an embodiment of the present invention. Figure 5 As shown, in this embodiment, the light sensor 100 and light sensor 100R include a thin-film transistor 110, a light-sensing element 120, a first color resist 130, a gate line M1, a data line M3, and a common electrode line M4. (The last sentence appears to be incomplete and possibly refers to a different implementation.) Figure 5 Viewed from above, the first color resist 130 surrounds the photosensitive element 120 of the light sensor 100 and covers the thin-film transistor 110, while the first color resist 130 covers the thin-film transistor 110 and the photosensitive element 120 of the light sensor 100R. The specific structures of the light sensor 100 and the light sensor 100R will be described in more detail below.

[0086] Please refer to Figure 6 . Figure 6 According to an embodiment of the present invention, based on Figure 5 Cross-sectional views of optical sensor 100 and optical sensor 100R along cross-sections IV-IV' and V-V'. Figure 5 as well as Figure 6 As shown, the structural configuration of the light sensor 100 and the light sensor 100R is similar to... Figure 1 as well as Figure 2 The optical sensor 100 shown has a similar structural configuration. Figure 5 as well as Figure 6 The difference between the light sensor 100R and the light sensor 100 is that the first color resist 130 of the light sensor 100R covers the thin film transistor 110 and the light sensing element 120, while the first color resist 130 of the light sensor 100 only covers the thin film transistor 110.

[0087] In some embodiments, the light sensor 100R can be used as a reference pixel for the light sensor 100. For example, in a panel filled with several light sensors 100 and light sensors 100R, the light sensor 100R can be disposed in the peripheral area of ​​the panel to serve as a reference pixel for the several light sensors 100 located in the center of the panel. Figure 6 As shown, since the first color resist 130 of the light sensor 100R covers the entire surface, visible light L cannot pass through the first color resist 130 of the light sensor 100R and thus cannot be received by the light sensing element 120. The light sensor 100R is configured to prevent visible light L from passing through, serving as a dark pixel in the aforementioned panel, thereby allowing the light sensor 100 to be compared with a reference pixel, such as the light sensor 100R, to perform color correction.

[0088] With the aforementioned structural configuration, when X-rays from the outside are incident on the light sensor 100, the light conversion material layer 140 converts the X-rays into visible light L. Visible light L passing through the first color filter 130 is absorbed by the first color filter 130 and cannot reach the photosensitive element 120 located below the first color filter 130. Visible light L passing through the opening O can reach the photosensitive element 120. After receiving the visible light L, the photosensitive element 120 generates a current through the PIN diode 121. This current flows from the photosensitive element 120 to the thin-film transistor 110, and then through the thin-film transistor 110 to the data line M3. Therefore, the light sensor 100, equipped with the first color filter 130 and at least partially located above the photosensitive element 120, can increase the collimation of the visible light L received by the photosensitive element 120, thereby improving image quality. When X-rays from the outside are incident on the light sensor 100R, the light conversion material layer 140 converts the X-rays into visible light L. When visible light L passes through the first color resist 130, it will be absorbed by the first color resist 130 and will not be able to reach the photosensitive element 120 located below the first color resist 130, so as to serve as a reference pixel of the photosensitive element 100, thereby achieving the purpose of color correction.

[0089] Please refer to Figure 7 . Figure 7 This is a cross-sectional view of an optical sensor 100B according to an embodiment of the present invention. Figure 7 As shown, the structural configuration of the light sensor 100B is generally similar to that of the light sensor 100. The difference between the light sensor 100B and the light sensor 100B lies in that the transparent organic protective layer 150 of the light sensor 100B is located on the first color resist 130 and fills the opening O. The transparent organic protective layer 150 has a first portion located directly above the first color resist 130 and a second portion located directly above the light sensing element 120. In some embodiments, the refractive index of the transparent organic protective layer 150 is greater than the refractive index of the first color resist 130. Furthermore, as... Figure 7 As shown, the upper surface 130a of the first color resist 130 is higher than the upper surface 150a of the transparent organic protective layer 150. The light conversion material layer 140 is located on the transparent organic protective layer 150 and is configured to convert X-rays into visible light L in the wavelength range between about 500 nanometers and about 600 nanometers.

[0090] With the aforementioned structural configuration, the light sensor 100B, which has a transparent organic protective layer 150 on the first color resist 130, can increase the collimation of visible light L received by the light sensing element 120, thereby improving the image quality.

[0091] Please refer to Figure 8 . Figure 8 This is a cross-sectional view of an optical sensor 100C according to an embodiment of the present invention. Figure 8 As shown, the structural configuration of the light sensor 100C is roughly similar to that of the light sensor 100B. The difference between the light sensor 100C and the light sensor 100B lies in that the light sensor 100C further includes an inorganic protective layer 160. The inorganic protective layer 160 is located between the first color resist 130 and the transparent organic protective layer 150. The transparent organic protective layer 150 is located on the inorganic protective layer 160 and fills the opening O of the first color resist 130.

[0092] In some implementations, such as Figure 8 As shown, the refractive index of the inorganic protective layer 160 is greater than that of the transparent organic protective layer 150. In some embodiments, the refractive index of the inorganic protective layer 160 is greater than both the refractive index of the transparent organic protective layer 150 and the refractive index of the first color filter 130, and the refractive index of the transparent organic protective layer 150 is greater than that of the first color filter 130. Because the difference between the refractive indices of the inorganic protective layer 160 and the first color filter 130 is greater than the difference between the refractive indices of the transparent organic protective layer 150 and the first color filter 130, when visible light L enters the inorganic protective layer 160 from the transparent organic protective layer 150 and then reaches the first color filter 130, the visible light L can be reflected by the first color filter 130 and received by the photosensing element 120.

[0093] With the aforementioned structural configuration, when X-rays from the outside are incident on the light sensor 100C, the light conversion material layer 140 converts the X-rays into visible light L. Since the refractive index of the inorganic protective layer 160 is greater than that of the transparent organic protective layer 150, and the refractive index of the transparent organic protective layer 150 is greater than that of the first color filter 130, the visible light L entering the inorganic protective layer 160 from the transparent organic protective layer 150 and then reaching the first color filter 130 will be reflected by the first color filter 130 and reach the photosensitive element 120 located below the first color filter 130. The visible light L passing through the opening O can then reach the photosensitive element 120. After receiving the visible light L, the photosensitive element 120 generates a current through the PIN diode 121. This current flows from the photosensitive element 120 to the thin-film transistor 110, and then through the thin-film transistor 110 to the data line M3. Therefore, the light sensor 100C with a transparent organic protective layer 150 on the first color resist 130 can increase the collimation of visible light L received by the light sensing element 120, thereby improving the image quality.

[0094] In some embodiments, the material of the inorganic protective layer 160 may be, for example, silicon nitride (Si). x N y (or other similar materials.)

[0095] Please refer to Figure 9 . Figure 9This is a cross-sectional view of an optical sensor 100D according to an embodiment of the present invention. Figure 9 As shown, the structural configuration of the light sensor 100D is generally similar to that of the light sensor 100. The difference between the light sensor 100D and the light sensor 100 is that the upper surface 130a of the first color resist 130 in the light sensor 100D is flush with the upper surface 150a of the transparent organic protective layer 150. In other words, in this invention, the upper surface 130a can also be configured to be higher than the upper surface 150a (e.g., ...). Figure 2 As shown), the upper surface 130a can also be set to be lower than the upper surface 150a (e.g. Figure 7 (As shown).

[0096] Please refer to Figure 10 . Figure 10 This is a cross-sectional view of an optical sensor 100E according to an embodiment of the present invention. Figure 10 As shown, the structural configuration of the light sensor 100E is generally similar to that of the light sensor 100. The difference between the light sensor 100E and the light sensor 100E lies in that the transparent organic protective layer 150 of the light sensor 100E is located within the opening O of the first color resist 130, and the light conversion material layer 140 of the light sensor 100E has an upper surface 140a and an upper surface 140b located at different heights. In some embodiments, the upper surface 140a is located directly above the first color resist 130, and the upper surface 140b is located directly above the light sensing element 120. Figure 10 As shown, the first color resist 130 of the light sensor 100E has an upper surface 130a, and the transparent organic protective layer 150 also has an upper surface 150a. In some embodiments, such as Figure 10 As shown, the upper surface 130a of the first color resist 130 is higher than the upper surface 150a of the transparent organic protective layer 150.

[0097] In some implementations, such as Figure 10 As shown, the upper surface 140b is lower than the upper surface 140a. Due to the height difference between the upper surfaces 140a and 140b, visible light L can achieve the purpose of forming a pixelated scintillator by the special morphology generated by the upper surfaces 140a and 140b on the surface of the light conversion material layer 140, thus making it easier for the photosensitive element 120 to receive the visible light L.

[0098] With the aforementioned structural configuration, when X-rays from the outside are incident on the light sensor 100E, the light conversion material layer 140 converts the X-rays into visible light L. Since the upper surface 140b is lower than the upper surface 140a, the visible light L is more easily focused to reach the first color resist 130 and the transparent organic protective layer 150, and subsequently to the photosensitive element 120. After receiving the visible light L, the photosensitive element 120 generates a current through the PIN diode 121. This current flows from the photosensitive element 120 to the thin-film transistor 110, and then through the thin-film transistor 110 to the data line M3. Therefore, the light sensor 100E, with its light conversion material layer 140 having a varying surface height, can increase the collimation of the visible light L received by the photosensitive element 120, thereby improving image quality.

[0099] Please refer to Figure 11 . Figure 11 This is a cross-sectional view of an optical sensor 100F according to an embodiment of the present invention. Figure 11 As shown, the structural configuration of the light sensor 100F is roughly similar to that of the light sensor 100E. The difference between the light sensor 100F and the light sensor 100E lies in that the transparent organic protective layer 150 of the light sensor 100F fills the opening O of the first color resist 130, and the transparent organic protective layer 150 protrudes relative to the first color resist 130. For example... Figure 11 As shown, the light conversion material layer 140 of the light sensor 100F has an upper surface 140a and an upper surface 140b at different heights, with the upper surface 140a located directly above the first color resist 130 and the upper surface 140b located directly above the light sensing element 120. Figure 11 As shown, the first color resist 130 of the light sensor 100F has an upper surface 130a, and the transparent organic protective layer 150 also has an upper surface 150a. In some embodiments, such as Figure 11 As shown, the upper surface 130a of the first color resist 130 is lower than the upper surface 150a of the transparent organic protective layer 150.

[0100] In some implementations, such as Figure 11 As shown, the upper surface 140b is higher than the upper surface 140a. Due to the height difference between the upper surfaces 140a and 140b, visible light L can achieve the purpose of forming a pixelated scintillator by passing through the special morphology on the surface of the light conversion material layer 140 generated by the upper surfaces 140a and 140b, thus making it easier for the photosensitive element 120 to receive the visible light L.

[0101] With the aforementioned structural configuration, when X-rays from the outside are incident on the light sensor 100F, the light conversion material layer 140 converts the X-rays into visible light L. Since the upper surface 140b is higher than the upper surface 140a, the visible light L is more easily focused to reach the first color resist 130 and the transparent organic protective layer 150, and subsequently to the photosensitive element 120. After receiving the visible light L, the photosensitive element 120 generates a current through the PIN diode 121. This current flows from the photosensitive element 120 to the thin-film transistor 110, and then through the thin-film transistor 110 to the data line M3. Therefore, the light sensor 100F, with its light conversion material layer 140 having a varying surface height, can increase the collimation of the visible light L received by the photosensitive element 120, thereby improving image quality.

[0102] Please refer to Figure 12 as well as Figure 13 . Figure 12 This is a top view of a laser LS repair optical sensor 100 according to an embodiment of the present invention. Figure 13 According to an embodiment of the present invention, based on Figure 12 The cross-sectional view of the optical sensor 100 repaired using laser LS is shown in section line VI-VI'. It should be noted that, due to... Figure 12 as well as Figure 13 The structural configuration of the optical sensor 100 and Figure 1 as well as Figure 2 The optical sensor 100 has the same structural configuration as the optical sensor 100, so the components of the optical sensor 100 will not be described in detail below. Figure 12 as well as Figure 13 As shown, when the light sensor 100 malfunctions due to problems between components (e.g., leakage problems), for example, when the thin-film transistor 110 and the light sensing element 120 malfunction and the pixels of the panel cannot be displayed normally, the manufacturer can use a laser LS along the path P from the thin-film transistor 110 to the light sensing element 120. LS Perform the operation to repair the circuit of the light sensor 100. It should be noted that, as... Figure 12 as well as Figure 13 The operation of the repair circuit for the illustrated optical sensor 100 can also be applied to optical sensors 100A to 100F and 100R. Since optical sensors 100, 100A to 100F, and 100R are all equipped with a semi-transparent first color resist 130 and / or a second color resist 130G, the manufacturer can observe their internal state, allowing them to directly target the problematic area using a laser LS to perform the repair circuit operation.

[0103] From the detailed description of the specific embodiments of the present invention above, it is evident that in the optical sensor of the present invention, because the optical sensor includes a light conversion material layer, X-rays incident on the optical sensor can be converted into visible light in the wavelength range between approximately 500 nanometers and approximately 600 nanometers. In the optical sensor of the present invention, because the first color resist is located above the thin-film transistor and surrounds the photosensitive element when viewed from above, the collimation of the visible light converted by the light conversion material layer entering the photosensitive element is improved. In the optical sensor of the present invention, because the first and second color resists are semi-transparent, the manufacturer can more easily use lasers to repair damaged circuits. Through the optical sensor of the present invention, the collimation of visible light entering the photosensitive element can be improved to enhance image quality and facilitate circuit repair.

[0104] Although the present invention has been disclosed in conjunction with the above embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A light sensor, comprising: substrate; Gate lines are located above the substrate; The data cable is located above the substrate; A thin-film transistor, wherein the gate of the thin-film transistor is electrically connected to the gate line, and the drain of the thin-film transistor is electrically connected to the data line; A photosensitive element, the lower electrode of which is electrically connected to the source of the thin-film transistor; A common electrode line is located above the substrate and is electrically connected to the upper electrode of the photosensitive element; A first color resist is located above the thin-film transistor and has an opening directly defined by the first color resist. When viewed from above, the first color resist surrounds the photosensitive element. The opening has a closed profile and is configured to allow light to pass through it and reach the photosensitive element. as well as A light conversion material layer is located on the first color resist, wherein the light conversion material layer is configured to convert X-rays into visible light in the wavelength range between 500 nm and 600 nm, and the first color resist has an average transmittance of less than 50% for the visible light in the wavelength range.

2. The optical sensor of claim 1, wherein the first color resist is a red photoresist.

3. The optical sensor of claim 1, wherein the first color resist is a blue photoresist.

4. The optical sensor of claim 1, wherein the light conversion material layer comprises thallium-doped cesium iodide material.

5. The optical sensor of claim 1, wherein the upper surface of the light conversion material layer directly above the optical sensing element is lower than the upper surface of the light conversion material layer directly above the first color filter.

6. The optical sensor of claim 1, wherein the upper surface of the light conversion material layer directly above the optical sensing element is higher than the upper surface of the light conversion material layer directly above the first color filter.

7. The optical sensor of claim 1, further comprising a transparent organic protective layer disposed between the light conversion material layer and the photosensitive element.

8. The optical sensor of claim 7, wherein the refractive index of the transparent organic protective layer is greater than the refractive index of the first color resist.

9. The light sensor of claim 7, wherein the transparent organic protective layer is at least partially located directly above the light sensing element and flush with the upper surface of the first color resist.

10. The light sensor of claim 7, wherein the transparent organic protective layer has a first portion located directly above the first color filter and a second portion located directly above the light sensing element.

11. The optical sensor of claim 7, further comprising an inorganic protective layer disposed between the first color resist and the transparent organic protective layer.

12. The optical sensor of claim 11, wherein the refractive index of the inorganic protective layer is greater than the refractive index of the transparent organic protective layer.

13. The optical sensor of claim 1, further comprising a second color resist located at least partially above the optical sensing element, the second color resist having an average transmittance of greater than 90% for visible light in a wavelength range between 500 nm and 600 nm.

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