Light emitting device

Abstract

The present disclosure provides a light emitting device including a light emitting element. The light emitting device also includes a wavelength conversion element disposed on the light emitting element, the wavelength conversion element having a first refractive index at a first wavelength. The light emitting device further includes a light blocking element surrounding the wavelength conversion element. The light blocking element has a second refractive index at the first wavelength. The second refractive index is greater than the first refractive index.

Description

[0001] This application is a divisional application of Chinese invention patent application No. 201910585041.4, filed on July 1, 2019, entitled "Light-emitting device". Technical Field

[0002] This disclosure relates to light-emitting devices, and more particularly to light-emitting devices having light-emitting diodes. Background Technology

[0003] With the development of digital technology, light-emitting devices have been widely used in all aspects of daily life. For example, they are widely used in modern information devices such as televisions, laptops, computers, mobile phones, and smartphones, and these devices are constantly evolving towards being lighter, thinner, smaller, and more stylish. These light-emitting devices include light-emitting diode (LED) devices.

[0004] The recombination of electrons and holes in a light-emitting diode (LED) can generate electromagnetic radiation (e.g., light) via the current at the pn junction. For example, in a forward-biased pn junction formed of a direct bandgap material such as GaAs or GaN, the recombination of electrons and holes injected into the vacuoles triggers electromagnetic radiation. This electromagnetic radiation can be located in the visible or non-visible light regions. Materials with different bandgap sizes can be used to form LEDs of different colors.

[0005] With the current trend towards mass production in the micro-LED lighting device industry, any reduction in the production cost of any micro-LED lighting device can bring significant economic benefits. However, current lighting devices are not satisfactory in all aspects.

[0006] Therefore, there is a need for light-emitting diodes (LEDs) that can further increase production capacity and light-emitting devices made from LEDs. Summary of the Invention

[0007] This disclosure provides a light-emitting device, including a substrate, a light-emitting element, a wavelength conversion element, a light-shielding element, and a filter layer. The substrate has a surface. The light-emitting element is disposed on the surface. The wavelength conversion element is disposed on the light-emitting element. The light-shielding element surrounds the wavelength conversion element. The light-shielding element includes a photoresist element and a cover layer. The photoresist element includes a light-shielding material. The cover layer covers the surface of the photoresist element. The filter layer is disposed on the wavelength conversion element. The filter layer overlaps the photoresist element in the normal direction of the surface. Attached Figure Description

[0008] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, wherein:

[0009] Figure 1A-1GA cross-sectional schematic diagram of each stage of the manufacturing process of a light-emitting device is provided according to some embodiments of the present disclosure.

[0010] Figure 2A-2D A cross-sectional schematic diagram of each stage of the manufacturing process for forming a structure including a light conversion element and a light-shielding element, according to some embodiments of the present disclosure;

[0011] Figures 3A-3D A cross-sectional schematic diagram of each stage of the manufacturing process for forming a structure including a light conversion element and a light-shielding element, according to some embodiments of the present disclosure;

[0012] Figure 4 This is a schematic cross-sectional view of a light-emitting device according to some embodiments of the present disclosure;

[0013] Figure 5 This is a cross-sectional schematic diagram of a structure including a light conversion element and a light blocking element according to some embodiments of the present disclosure;

[0014] Figure 6A , 6B A cross-sectional schematic diagram of each stage of the manufacturing process of a light-emitting device is provided according to some embodiments of the present disclosure.

[0015] Figure 7 This is a cross-sectional schematic diagram of a structure including a light conversion element and a light blocking element according to some embodiments of the present disclosure;

[0016] Figure 8 This is a schematic cross-sectional view of a light-emitting device according to some embodiments of the present disclosure;

[0017] Figure 9 This is a schematic cross-sectional view of a light-emitting device according to some embodiments of the present disclosure;

[0018] Figure 10 This is a schematic cross-sectional view of a light-emitting device according to some embodiments of the present disclosure;

[0019] Figure 11 This is a schematic cross-sectional view of a light-emitting device according to some embodiments of the present disclosure;

[0020] Figure 12 This is a cross-sectional schematic diagram of a light-emitting device according to some embodiments of the present disclosure.

[0021] Figure 1A-12 The annotations in the attached figures are explained as follows:

[0022] 100A~100G Light-emitting device

[0023] 102 Growth Foundation

[0024] 104 Light-emitting elements

[0025] 104T side view

[0026] 106 conductive pad

[0027] 108 Supporting base

[0028] 110 Adhesive layer

[0029] 112 Supporting Structure

[0030] 114 Transfer Head

[0031] 116 Cutting Track

[0032] 118 base

[0033] 120 circuit layers

[0034] 122 Light-shielding element

[0035] 122S Side View

[0036] 122T upper surface

[0037] 124, 126, 128 color conversion elements

[0038] 130 filter layer

[0039] 130S upper surface

[0040] 132 Protective Layer

[0041] 134 Covering layer

[0042] 136 Supporting base

[0043] 138 Light-shielding layer

[0044] 139 Photoresist Element

[0045] 140 Covering Layer

[0046] 142 Planarization layer

[0047] 144 Active components

[0048] 146 wires

[0049] 148 Gate insulating layer

[0050] 150 Source Electrode

[0051] 152 Drain electrode

[0052] 154 Gate electrode

[0053] 156 Conductive film

[0054] 158 conductive particles

[0055] 160 Adhesive layer

[0056] 162 Active components

[0057] 164 wires

[0058] 166 Scattering Particles

[0059] 168 microstructure

[0060] 170' semi-permeable layer

[0061] 200A~200D Structure Detailed Implementation

[0062] The following provides a detailed description of the component substrate, light-emitting device, and manufacturing method of the light-emitting device according to some embodiments of the present disclosure. It should be understood that the following description provides many different embodiments or examples to implement different variations of some embodiments of the present disclosure. The specific components and arrangements described below are merely for simple and clear description of some embodiments of the present disclosure. Of course, these are only examples and not limitations of the present disclosure. Furthermore, repeated reference numerals or designations may be used in different embodiments. These repetitions are only for simple and clear description of some embodiments of the present disclosure and do not represent any association between the different embodiments and / or structures discussed. Moreover, when a first material layer is mentioned as being located on or above a second material layer, this includes the case where the first material layer and the second material layer are in direct contact. Alternatively, there may be a case where one or more other material layers are spaced apart, in which case the first material layer and the second material layer may not be in direct contact.

[0063] Furthermore, relative terms such as "lower" or "bottom" and "higher" or "top" may be used in the embodiments to describe the relative relationship of one element to another in the figures. It is understood that if the apparatus in the figures is flipped so that it is upside down, the element described as being on the "lower" side will become the element on the "higher" side.

[0064] Here, the terms "about," "approximately," and "roughly" generally indicate within 20%, preferably within 10%, and even more preferably within 5%, or within 3%, or within 2%, or within 1%, or within 0.5%, of a given value or range. The quantities given here are approximate; that is, even without specific mention of "about," "approximately," or "roughly," their meaning is implied.

[0065] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms, and these terms are only used to distinguish different elements, components, regions, layers, and / or portions. Therefore, a first element, component, region, layer, and / or portion discussed below may be referred to as a second element, component, region, layer, and / or portion without departing from the teachings of some embodiments of this disclosure.

[0066] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of this disclosure.

[0067] Some embodiments of this disclosure can be understood in conjunction with the accompanying drawings, which are also considered part of the description of the embodiments of this disclosure. It should be understood that the drawings of the embodiments of this disclosure are not shown to scale of actual devices and components. The shape and thickness of the embodiments may be exaggerated in the drawings to clearly illustrate the features of the embodiments of this disclosure. Furthermore, the structures and devices in the drawings are shown schematically to clearly illustrate the features of the embodiments of this disclosure.

[0068] In some embodiments of this disclosure, relative terms such as "down," "up," "horizontal," "vertical," "below," "above," "top," "bottom," etc., should be understood as referring to the orientation shown in the paragraph and related figures. These relative terms are for convenience only and do not imply that the described device must be manufactured or operated in a specific orientation. Terms relating to joining or connecting, such as "connection" or "interconnection," unless specifically defined, may refer to two structures being in direct contact, or to two structures not being in direct contact, with other structures disposed between them. Furthermore, these terms relating to joining or connecting may include situations where both structures are movable or both structures are fixed.

[0069] It is worth noting that the term "substrate" in the following text may include elements formed on a transparent substrate and various film layers covering the substrate, on which any desired multiple active elements (transistor elements) may be formed. However, for the sake of simplicity in the accompanying drawings, only a flat substrate is used here.

[0070] The thickness of a structure described in these embodiments of the present disclosure represents the average thickness of the structure after removing outliers. Outliers can be the thickness of edges, noticeable micro-grooves, or noticeable micro-protrusions. After removing these outliers, the vast majority of the thickness values ​​of the structure fall within the range of plus or minus three standard deviations of the average thickness.

[0071] Figure 1A-1G This is a cross-sectional schematic diagram of the various stages of the fabrication process for forming the light-emitting device 100A according to some embodiments of the present disclosure. In some embodiments, as shown in FIG1, a plurality of light-emitting elements 104 are formed on a growth substrate 102. In some embodiments, the growth substrate 102 is a wafer substrate comprising a silicon or sapphire substrate, wherein the sapphire substrate comprises aluminum oxide. In other embodiments, the growth substrate 102 is a substrate comprising GaP, GaAs, AlGaAs, or SiC.

[0072] In some embodiments, the light-emitting element 104 is, for example, a micro light-emitting diode (μLED). The chip size of the μLED is between about 1 μm and about 100 μm. The light-emitting element 104 may be a mini LED. The chip size of the mini LED is between about 100 μm and about 300 μm. The light-emitting element 104 may be a light-emitting diode (LED). The chip size of the LED is between about 300 μm and about 10 mm. The μLED generates electromagnetic radiation (e.g., light) by utilizing the recombination of electron-hole pairs in the PN junction. In a forward-biased PN junction formed of a direct band gap material such as gallium arsenide (GaAs) or gallium nitride (GaN), the recombination of electron-hole pairs injected into the depletion region generates electromagnetic radiation. The electromagnetic radiation may be located in the visible light region or the non-visible light region, and materials with different band gaps can form miniature light-emitting diodes that emit light of different colors.

[0073] In some embodiments, the light-emitting element 104 includes a p-type semiconductor layer, an n-type semiconductor layer, and a light-emitting layer disposed between the two. The p-type semiconductor layer provides holes, and the n-type semiconductor layer provides electrons. Accordingly, holes and electrons recombine to generate electromagnetic waves. The semiconductor layer includes, but is not limited to, AlN, GaN, GaAs, InN, AlGaN, AlInN, InGaN, AlInGaN, or combinations thereof.

[0074] The light-emitting layer may include a homojunction, a heterojunction, a single-quantum well (SQW), a multiple-quantum well (MQW), or other similar structures. In some embodiments, the light-emitting layer 108 comprises undoped n-type In. x Ga (1-x) N. In other embodiments, the light-emitting layer 108 may comprise, for example, Al. x In y Ga (1-x-y) Other suitable materials for N. Additionally, the luminescent layer 108 can be a multiple quantum well structure comprising alternating layers of multiple wells (e.g., InGaN) and barrier layers (e.g., GaN). Furthermore, the luminescent layer 108 can be formed using metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), liquid phase epitaxy (LPE), or other suitable chemical vapor deposition methods.

[0075] like Figure 1A As shown, a conductive pad 106 is formed on the light-emitting element 104. The material of the conductive pad 106 may include silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), iridium (Ir), rhodium (Rh), indium (In), bismuth (Bi), alloys of the above, combinations of the above, or other metal materials with good conductivity, and is not limited thereto.

[0076] In some embodiments, such as Figure 1B As shown, the light-emitting element 104 is attached to the carrier substrate 108, and the growth substrate 102 is removed from the light-emitting element 104. In some embodiments, the light-emitting element 104 is attached to the carrier substrate 108 via a conductive pad 106 and an adhesive layer 110. In some embodiments, the carrier substrate 108 is a substrate used to temporarily hold the light-emitting element 104. In subsequent processes, the light-emitting element 104 is removed from the carrier substrate 108. The carrier substrate 108 may include a glass substrate, a ceramic substrate, a plastic substrate, or other suitable substrate. The material of the adhesive layer 110 may be a polymer or other suitable material. In some embodiments, the light-emitting element 104 is transferred from the growth substrate 102 to the carrier substrate 108 by a laser lift-off (LLO) process.

[0077] In some embodiments, such as Figure 1C As shown, a support structure 112 is formed to surround the light-emitting element 104 and the conductive pad 106. The support structure 112 is configured to protect the light-emitting element 104 and the conductive pad 106 from damage or contamination in subsequent processes. The material of the support structure 112 may include resin or other suitable materials, and is not limited thereto. In some embodiments, the support structure 112 is formed of black resin. The support structure 112 may be formed by a coating process. In some embodiments, a resin material is coated to fill the space between two adjacent light-emitting elements 104 and cover the upper surface of the light-emitting element 104. Next, a patterning process is performed to remove a portion of the resin material, exposing the upper surface of the light-emitting element 104.

[0078] In some embodiments, such as Figure 1D As shown, the light-emitting element 104, conductive pad 106, and support structure 112 are transferred onto a transfer head 114. The transfer head 114 is used to pick up the light-emitting element 104 and place it onto another substrate. In some embodiments, the transfer head 114 may be disposed on a microelectromechanical system (MEMS) device (not shown). In some embodiments, the light-emitting element 104 is transferred onto the transfer head 114 by vacuum force or electrostatic force. Furthermore, during the transfer process, a slit 116 is formed. The support structure 112 is cut to form the slit 116. Figure 1D Three light-emitting elements 104 are shown forming a group, and these light-emitting elements 104 are located between two adjacent cutting channels 116. The number of light-emitting elements 104 in a group can be adjusted, and this disclosure is not limited thereto.

[0079] In some embodiments, such as Figure 1E As shown, the light-emitting element 104 is transferred from the transfer head 114 to the substrate 118. To clearly illustrate the relationship between the various elements, Figure 1E The accompanying drawings only illustrate the positional relationship between the group consisting of three light-emitting elements 104 and other elements. In some embodiments, the substrate 118 may include a transparent or opaque substrate, such as a glass substrate, ceramic substrate, plastic substrate, or other suitable substrate. Figure 1EAs shown, a circuit layer 120 is formed on a substrate 118. The substrate 118 may be a carrier substrate, and the circuit layer 120 may include a dielectric layer (not shown) formed therein and a plurality of conductive elements. The dielectric layer may include, but is not limited to, silicon oxide, silicon nitride, silicon oxide, or other suitable materials. The conductive elements may include various passive and active elements, such as capacitors, such as metal-insulator-metal capacitors (MIMCAP), inductors, diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary MOS transistors, bipolar junction transistors (BJTs), laterally diffused MOS transistors, high-power MOS transistors, or other types of transistors. Figure 1E As an example, the light-emitting element 104 can be electrically connected to the circuit layer 120 via the conductive pad 106.

[0080] In some embodiments, such as Figure 1F As shown, structure 200A is attached to the upper surface of the light-emitting element 104 and the support structure 112. Details of the fabrication process for forming structure 200A will be described later. In some embodiments, such as... Figure 1F As shown, structure 200A includes a light-shielding element 122, a red color conversion element 124, a green color conversion element 126, and a blue color conversion element 128. The red color conversion element 124, green color conversion element 126, or blue color conversion element 128 are generally also referred to as wavelength conversion elements. That is, in this disclosure, color conversion elements are the same as wavelength conversion elements. The red color conversion element 124, green color conversion element 126, and blue color conversion element 128 are surrounded by the light-shielding element 122 and spaced apart from each other by the light-shielding element 122. In this disclosure, the term "surround" can include "completely surrounding" and "partially surrounding". Additionally, the red color conversion element 124, green color conversion element 126, and blue color conversion element 128 cover a portion of the upper surface of the light-emitting element 104. In some embodiments, the light-shielding element 122 covers a portion of the upper surface of the light-emitting element 104 and also covers the upper surface of the support structure 112. Alternatively, the cutout 116 is located below the light-shielding element 122. Structure 200A can be attached to the light-emitting element 104 via a transparent adhesive layer (not shown).

[0081] The light-shielding element 122 can be used to cover elements or areas of the light-emitting device 100A that are not used to display color. For example, the light-shielding element 122 can be used to cover data lines or scan lines.

[0082] like Figure 1FAs shown, color conversion elements 124, 126, and 128 are located on the light-emitting element 104. In some embodiments, the red color conversion element 124, the green color conversion element 126, and the blue color conversion element 128 correspond to the red pixel, the green pixel, and the blue pixel, respectively. The materials of the red color conversion element 124, the green color conversion element 126, and the blue color conversion element 128 include quantum dot films, fluorescent materials, or other wavelength conversion materials, and are not limited thereto. For example, color conversion elements 124, 126, and 128 are organic or inorganic layers mixed with quantum dots. Quantum dots may include zinc, cadmium, selenium, sulfur, InP, GaSb, GaAs, CdSe, CdS, ZnS, or combinations thereof, and are not limited thereto. The particle size of the quantum dots may be in the range of about 1 nm to about 30 nm, but the present invention is not limited thereto.

[0083] When quantum dots of different sizes are excited by light, they can be converted to produce light of different wavelengths. For example, small quantum dots can be excited to produce shorter wavelength light (e.g., blue light), while large quantum dots can be excited to produce longer wavelength light (e.g., red light). Therefore, by adjusting the size of the quantum dots, light with different wavelengths can be produced, achieving a wide color gamut effect. For instance, a red color conversion element 124 mixed with or doped with quantum dots of a first size can be excited to produce red light, a green color conversion element 126 mixed with or doped with quantum dots of a second size can be excited to produce green light, and a blue color conversion element 128 mixed with or doped with quantum dots of a third size can be excited to produce red light.

[0084] In some embodiments, the refractive index (n1) of the light-shielding element 122 is greater than the refractive index (n2) of the color conversion elements 124, 126, or 128. Furthermore, in some embodiments, the difference between the refractive indices (n1) and (n2) is greater than 1. For example, the difference between the refractive index of the light-shielding element 122 and the refractive index of the red color conversion element 124 is greater than 1. The intensity I1 of the light emitted from the light-emitting element 104 and the intensity I2 of the light reflected from the light-shielding element 122 satisfy the following equation:

[0085] I2∝I1*[(n1-n2) 2 / (n1+n2) 2 ]

[0086] The equation states that the intensity I2 of light is proportional to the difference between the refractive indices (n1) and (n2). In other words, the greater the difference between the refractive indices (n1) and (n2), the greater the intensity I2. In some cases, when the difference between the refractive index of the light-shielding element 122 and the refractive index of the wavelength conversion element is greater than 1, the reflected light has a greater intensity. Therefore, the intensity of the light emitted by the light-emitting device is improved.

[0087] In some embodiments, the refractive index of the light-shielding element 122 is greater than 2. For example, the material of the light-shielding element 122 includes, but is not limited to, zirconium oxide (ZrO2), potassium sodium niobate (KNbO3), silicon carbide (SiC), gallium phosphide (GaP), gallium arsenide (GaAs), zinc oxide (ZnO), silicon (Si), germanium (Ge), or silicon germanium (SiGe). In some embodiments, the difference between the refractive index of the light-shielding element and the refractive index of the color conversion elements 124, 126, or 128 is greater than 1 when measured at a wavelength of approximately 630 nm. Since the light-shielding element 122 cannot easily absorb longer wavelengths of light, such as red light, a greater difference between the refractive index of the light-shielding element 122 and the refractive index of the color conversion elements 124, 126, or 128 at a wavelength of approximately 630 nm contributes to improving the color conversion efficiency of red light.

[0088] In some embodiments, the light-emitting element 104 emits blue light. In this case, the blue color conversion element 128 of the blue pixel can be replaced with a transparent filler. In some embodiments, the light-emitting element 104 emits ultraviolet light or other visible light. In some embodiments, at a wavelength of approximately 450 nm, the extinction coefficient of the light-shielding element 122 is greater than the extinction coefficient of the light conversion elements 124, 126, or 128. In some embodiments, at a wavelength of approximately 450 nm, the extinction coefficient of the support structure 112 is greater than the extinction coefficient of the light-emitting element 104. In some embodiments, the extinction coefficient of the light-shielding structure 122 is greater than the extinction coefficient of the light-emitting element 104. At a wavelength of approximately 450 nm, when the extinction coefficient of the light-shielding structure 122 is greater than the extinction coefficients of the light-emitting element 104 and the light conversion elements 124, 126, or 128, the blue light emitted by the light-emitting element 104 can be more effectively absorbed by the light-shielding element 122 or the support structure 112. Accordingly, light leakage can be prevented or the color purity of the light-emitting device can be improved.

[0089] In some embodiments, such as Figure 1G As shown, a filter layer 130, a protective layer 132, and a cover layer 134 are sequentially disposed on a light-shielding element 122, color conversion elements 124, 126, and 128. Accordingly, a light-emitting device 100A is formed. The filter layer 130 allows light of a specific wavelength to pass through. For example, a blue filter layer allows light with wavelengths between approximately 400 nm and approximately 500 nm to pass through, a green filter layer allows light with wavelengths between approximately 500 nm and approximately 570 nm to pass through, and a red filter layer allows light with wavelengths between approximately 620 nm and approximately 750 nm to pass through. In some embodiments, such as... Figure 1G As shown, the filter layer 130 may be a red filter layer disposed on the red color conversion element 124, a green filter layer disposed on the green color conversion element 126, or a filter layer disposed on both the red color conversion element 124 and the green color conversion element 126, which is capable of filtering out blue light. Figure 1GThe filter layer 130 is shown extending continuously from the upper surfaces of the red color conversion element 124 and the green color conversion element 126. Various variations and adjustments may be made to the embodiments of this disclosure. In some embodiments, the filter layer 130 may cover the upper surface of the red color conversion element 124 and the upper surface of the green color conversion element 126. In some embodiments, the filter layer 130 does not cover the upper surface of the blue color conversion element 128. In some embodiments, the filter layer 130 is a pigment filter made of an organic thin film. In some embodiments, the filter layer 130 is a multilayer film formed by stacking silicon oxide films, silicon nitride films, titanium oxide films, and other suitable thin films. In some embodiments, the filter layer 130 covers a portion of the light-shielding element 122 to prevent light leakage.

[0090] A protective layer 132 is provided to prevent color conversion elements 124, 126, and 128 from being damaged by the environment. For example... Figure 1G As shown, the protective layer 132 covers the upper surfaces of the light-shielding element 122, the filter layer 130, and the blue color conversion element 128, and also covers the sides of the light-shielding element 122 and the filter layer 130. In some embodiments, the protective layer 132 is in direct contact with the upper surface of the blue color conversion element 128. Furthermore, the protective layer 132 may provide a flat surface for providing the cover layer 134. The material of the protective layer 132 may include, but is not limited to, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), silicon oxide, silicon nitride, silicon oxynitride, or organic materials.

[0091] The cover layer 134 serves as the outer surface of the light-emitting device 100A. The cover layer 134 covers the upper surface of the protective layer 132. The material 134 of the cover layer includes, but is not limited to, glass, quartz, poly(methyl methacrylate) (PMMA), polycarbonate (PC), polyimide (PI), or other suitable materials.

[0092] In some embodiments, angle θ1 is formed by the upper surface 104T of the light-emitting element 104 and the side surface 122S of the light-shielding element 122. Angle θ2 is formed by the upper surface 122T of the light-shielding element 122 and the side surface 130S of the filter layer 130, and angle θ1 is greater than angle θ2. In some embodiments, angle θ2 is an acute angle. When angle θ2 is less than 90°, peeling during the formation of the protective layer can be prevented. In some cases, angle θ2 is not greater than angle θ1. When angle θ2 is less than angle θ1, it facilitates light diffraction or prevents light from mixing with light from adjacent pixels. Furthermore, angle θ1 may be formed by the lower surface and side surface of the color conversion elements 124, 126, and 128. Angle θ2 may be formed by the side surface of the filter layer 130 and the interface between the filter layer 130 and the light-shielding element 122.

[0093] In some embodiments, the refractive index (n3) of the light-emitting element 104 is greater than the refractive index (n2) of the color conversion elements 124, 126, or 128; the refractive index (n2) of the color conversion elements 124, 126, or 128 is greater than the refractive index (n4) of the filter layer 130; and the refractive index (n4) of the filter layer 130 is greater than the refractive index (n5) of the protective layer 132. In some embodiments, the difference in refractive index between two adjacent media is less than 0.5. When the difference in refractive index between two adjacent media is less than 0.5, the refracted light can have a smaller angle of refraction. Accordingly, the luminous efficiency of the light-emitting device 100A can be improved.

[0094] In some embodiments, the hardness of the light-shielding element 122 is greater than the hardness of the support structure 112. When the hardness of the light-shielding element 122 is greater than the hardness of the support structure 112, stability is enhanced during the assembly of the structure 200A and the light-emitting element 104. In some embodiments, the elasticity of the light-shielding element 122 is less than the elasticity of the support structure 112. When the elasticity of the light-shielding element 122 is less than the elasticity of the support structure 112, stability is enhanced during the assembly of the structure 200A and the light-emitting element 104.

[0095] Figure 2A-2D This is a schematic cross-sectional view of the various stages of the manufacturing process for forming structure 200A according to some embodiments of this disclosure. In some embodiments, such as Figure 2A As shown, a carrier substrate 136 and a light-shielding layer 138 formed on the carrier substrate 136 are provided. The carrier substrate 136 is a substrate for placing subsequently formed components. The carrier substrate 136 may be a glass substrate, a ceramic substrate, a plastic substrate, or other suitable substrate.

[0096] The light-shielding layer 138 is a material used to form the light-shielding element 122. The light-shielding layer 138 can be formed by a deposition process or a crystal growth process. Deposition processes include chemical vapor deposition (CVD), sputtering, resistance thermal evaporation, electron beam evaporation, and any other suitable method. Chemical vapor deposition can include low-pressure chemical vapor deposition (LPCVD), low-temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and other suitable methods, but is not limited thereto.

[0097] like Figure 2B As shown, a patterned light-shielding layer 138 is used to form a light-shielding element 122 in some embodiments. The light-shielding layer 138 may be patterned by a photolithography process. The photolithography process includes photoresist coating (e.g., spin coating), soft baking, mask alignment, exposure, post-exposure baking, photoresist development, rinsing, drying (e.g., hard baking), other suitable processes, or combinations thereof. Alternatively, the photolithography process may be performed or replaced by other suitable methods, such as maskless lithography, electron-beam writing, and ion-beam writing. After the light-shielding element 122 is formed, a plurality of openings U surrounded by the light-shielding element 122 are formed, exposing a portion of the upper surface of the substrate 136.

[0098] In some embodiments, such as Figure 2C As shown, a red color conversion element 124, a green color conversion element 126, and a blue color conversion element 128 are formed within the opening U. In some embodiments, the material of the color conversion elements is sprayed into the opening U by an inkjet or printing process. In some embodiments, the light-shielding element 122 has a thickness T1, and the color conversion elements 124, 126, or 128 have a thickness T2. When the thickness T2 is less than the thickness T1, mixing of different color conversion element materials can be prevented. In some embodiments, the width W1 of the lower surface of the color conversion elements 124, 126, or 128 is less than the width W2 of the upper surface of the color conversion elements 124, 126, or 128. When the width W1 is less than the width W2, luminous efficiency or viewing angle can be improved.

[0099] In some embodiments, such as Figure 2D As shown, the carrier substrate 136 is removed from the light-shielding element 122, the red color conversion element 124, the green color conversion element 126, and the blue color conversion element 128 to form structure 200A. In some embodiments, the carrier substrate 136 is removed by heating, light exposure, or other suitable methods.

[0100] Figure 2A-2D The light-shielding element 122 is shown to be composed of a single component. Various variations and adjustments can be made to the embodiments of this disclosure. The light-shielding element 122 may be a composite structure comprising two or more materials. See also Figures 3A-3D , Figures 3A-3D This is a schematic cross-sectional view of the various stages of the manufacturing process for forming structure 200B according to some embodiments of the present disclosure. In some embodiments, such as Figure 3A As shown, a patterned photoresist element 139 is formed on a substrate 136, and a capping layer 140 is conformally formed on the photoresist element 139. The photoresist element 139 and the capping layer 140 can be formed by multiple deposition or photolithography processes. In some embodiments, the light-shielding element 122 includes the photoresist element 139 and the capping layer 140 covering the photoresist element 139. The photoresist element 139 includes, but is not limited to, black photoresist, black inkjet, black resin, or other suitable light-shielding materials.

[0101] In some embodiments, the upper surface or side surface of the photoresist element 139 is covered by a capping layer 140. In this embodiment, the capping layer 140 comprises silicon. More specifically, the capping layer 140 is made of polycrystalline silicon or amorphous silicon, giving the light-shielding element 122 better light-shielding or waterproofing capabilities. In some embodiments, the capping layer 140 comprises a high-dielectric-constant material. High-dielectric-constant materials may include metal oxides, metal nitrides, metal silicides, transition metal oxides, transition metal nitrides, transition metal silicides, transition metal oxynitrides, metal aluminates, zirconium silicate, and zirconium aluminate. Materials with high dielectric constants include LaO, AlO, ZrO, TiO, Ta2O5, Y2O3, SrTiO3 (STO), BaTiO3 (BTO), BaZrO, HfO2, HfO3, HfZrO, HfLaO, HfSiO, HfSiON, LaSiO, AlSiO, HfTaO, HfTiO, HfTaTiO, HfAlON, (Ba,Sr)TiO3 (BST), Al2O3, and other suitable materials with high dielectric constants, combinations thereof, and not limited to these.

[0102] In some embodiments, such as Figure 3B As shown, a red color conversion element 124, a green color conversion element 126, and a blue color conversion element 128 are formed within the opening U. In some embodiments, the material of the color conversion elements 124, 126, and 128 is sprayed into the opening U by an inkjet or printing process.

[0103] In some embodiments, such as Figure 3C As shown, a planarization layer 142 is formed on color conversion elements 124, 126, 128 and a capping layer 140. The outer surface of the planarization layer 142 can be used to attach the light-emitting element 104 in subsequent processes. In some embodiments, the planarization layer 142 includes organic or inorganic materials, such as silicon oxide, silicon nitride, silicon oxynitride, and other dielectric materials, and is not limited thereto. Figure 3C As shown, the upper surface or side surface of color conversion elements 124, 126 and 128 is covered by a planarization layer 142. This prevents the color conversion elements 124, 126 and 128 from being damaged in subsequent processes.

[0104] In some embodiments, such as Figure 3D As shown, the carrier substrate 136 is removed from the light-shielding element 122, the red color conversion element 124, the green color conversion element 126, and the blue color conversion element 128 to form structure 200B. In some embodiments, the carrier substrate 136 is removed by heating, light exposure, or other suitable methods.

[0105] See Figure 4 , Figure 4 This is a schematic cross-sectional view of a light-emitting device 100B according to some embodiments of the present disclosure. Figure 1G The light-emitting device 100A shown is similar to... Figure 4 One difference in the illustrated light-emitting device 100 is that structure 200A of the light-emitting device 100A is replaced by structure 200B. In some embodiments, a planarization layer 142 is disposed between the light-emitting element 104 and the light-shielding element 122. For example... Figure 4 As shown, the planarization layer 142 covers the upper surface of the light-emitting element 104 and the support structure 112. Furthermore, a portion of the cover layer 140 is not covered by the filter layer 130. The light-emitting device 100B with structure 200B can have better light-shielding or waterproof capabilities.

[0106] Various changes and adjustments can be made to the embodiments disclosed herein. See also Figure 5 , Figure 5 This is a schematic cross-sectional view of structure 200C according to some embodiments of the present disclosure. In some embodiments, such as Figure 5 As shown, active element 144 is formed within light-shielding element 122. In some embodiments, active element 144 includes thin-film transistors, such as switching transistors, driving transistors, reset transistors, or other active elements.

[0107] Figure 5An active element 144 is shown embedded within a light-shielding element 122. Various variations and adjustments can be made to the embodiments of this disclosure. In some embodiments, a portion of the active element 144 is formed within the light-shielding element 122. In some embodiments, the active element 144 is formed on the surface of the light-shielding element 122 or embedded within the light-shielding element 122. Multiple processes can be performed on the light-shielding element 122 to form the active element 144. Alternatively, the active element 144 can be first formed on another substrate (not shown), and then the active element 144 can be transferred to the surface of the light-shielding element 122.

[0108] See Figure 6A and 6B , Figure 6A , 6B This is a cross-sectional schematic diagram showing two stages of the manufacturing process for forming the light-emitting device 100C according to some embodiments of the present disclosure. Figure 6A The materials and manufacturing processes of the structure shown can be the same as those described above. Figure 1A-1E Any descriptions that are identical or similar will not be repeated here. Details in this embodiment that are similar to those described in previous embodiments will also not be repeated here.

[0109] In some embodiments, such as Figure 6A As shown, wire 146 is formed within the support structure 112. Wire 146 is electrically connected to the light-emitting element 104 via wires 121 and 121', which are formed within the circuit layer 120. The material of wire 146 may include copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), alloys of the above, combinations thereof, or other suitable materials, and is not limited thereto. In some embodiments, a photolithography process is performed to form an opening within the support structure 112, exposing a portion of the circuit layer 120. Next, conductive material is filled into the opening. It is worth noting that wire 146 may be formed before the light-emitting element 104 is attached to the substrate 118.

[0110] It is worth noting that: Figure 6A The wire 146 shown is merely an example to provide a clearer understanding of this disclosure, and is not intended to limit the scope of the disclosure. That is, in different embodiments, the wire 146 may be arranged in different ways.

[0111] Conductors 121 and 121' are formed within circuit layer 120 and contact conductive pad 106. The materials of conductors 121 and 121' may include copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), alloys of the above, combinations thereof, or other suitable materials, and are not limited thereto.

[0112] In some embodiments, such as Figure 6B As shown, structure 200C is attached to light-emitting element 104. Next, a filter layer 130, a protective layer 132, and a cover layer 134 are sequentially formed on structure 200C to form light-emitting device 100C. Figure 6B As shown, active element 144 is electrically connected to light-emitting element 104 via wires 146, 121, 121' and conductive pad 106. Furthermore, active element 144 is electrically connected to active and / or passive elements formed within circuit layer 120. Wires 146 are respectively electrically connected to the source electrode, drain electrode, and gate electrode (not shown) of active element 144. In this embodiment, some active elements (e.g., switching transistors, driving transistors, reset transistors) are formed within light-shielding element 122 instead of within circuit layer 120. Therefore, the circuit layer 120 is thinned, resulting in a smaller size for the light-emitting device 100C. In other embodiments, passive elements are electrically connected to light-emitting element 104.

[0113] Various changes and adjustments can be made to the embodiments disclosed herein. See also Figure 7 , Figure 7 This is a cross-sectional schematic diagram of structure 200D according to some embodiments of the present disclosure. Figure 7 The structure 200D shown is similar to... Figure 3D One of the differences in the structure 200C shown is that the structure 200D further includes conductive elements electrically connected to the cover layer 140.

[0114] like Figure 7As shown, in some embodiments, structure 200D includes a source electrode 150, a drain electrode 152, and a gate electrode 154 on a capping layer 140. First, the source electrode 150 and drain electrode 152 are formed on the capping layer 140. Then, before forming the planarization layer 142, a gate insulating layer 148 is formed. In some embodiments, the gate insulating layer 148 is formed of silicon oxide or other dielectric materials. Next, a conductive material is deposited onto the gate insulating layer 148 and patterned to form the gate electrode 154. The material of the gate electrode 154 may include metal or other conductive materials. After forming the gate electrode 154, a planarization layer 142 is deposited onto the gate electrode 154 and the gate insulating layer 148. Next, a photolithography process is performed to form openings within the planarization layer 142 and the gate insulating layer 148, exposing a portion of the surfaces of the source electrode 150, drain electrode 152, and gate electrode 154. Next, conductive material is filled into the opening to make it contact the source electrode 150, the drain electrode 152, and the gate electrode 154. The materials of the source electrode 150, the drain electrode 152, and the gate electrode 154 may include copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), alloys of the above, combinations of the above, or other suitable materials, and are not limited thereto.

[0115] like Figure 7 As shown, the capping layer 140 is in contact with the source electrode 150 and the drain electrode 152. Furthermore, the gate electrode 154 is separated from the capping layer 140 by a gate insulating layer 148. In some embodiments, the capping layer 140 is formed of amorphous silicon, polycrystalline silicon, or metal-oxide-semiconductor. Therefore, the capping layer 140 is electrically connected to the source electrode 150 and the drain electrode 152. Accordingly, the structure 200D can be used as a switch to control the light-emitting device. In some embodiments, the structure 200C of the light-emitting device 100C is as follows... Figure 7 The structure 200D shown is inverted and replaced so that the wires 146 are electrically connected to the source electrode 150, the drain electrode 152 and the gate electrode 154 respectively via conductive material filled in the opening.

[0116] Various changes and adjustments can be made to the embodiments disclosed herein. Figure 8 This is a cross-sectional schematic diagram of a light-emitting device 100D according to some embodiments of the present disclosure. For example... Figure 8 The light-emitting device 100D shown is Figure 1G One of the differences in the light-emitting device 100A shown is that the light-emitting device 100D further includes a conductive film 156 disposed between the light-emitting element 104 and the circuit layer 120.

[0117] like Figure 8As shown, active element 162 and wire 164 are formed within circuit layer 120. Circuit layer 120 is disposed on substrate 118. Therefore, active element 162 is disposed on substrate 118. Active element 162 may include thin-film transistors, such as switching transistors, driving transistors, reset transistors, or other active elements. The material of wire 164 may be the same as or similar to that of wire 146, and will not be described again here. In some embodiments, conductive film 156 is anisotropic conductive film (ACF), which includes a plurality of conductive particles 158 and an adhesive layer 160. Conductive particles 158 may include metal or another conductive material. Adhesive layer 160 may include optical adhesive (OCA), optical clearresin (OCR), or another suitable material. Figure 8 As shown, the conductive particles 158 are arranged vertically. Because the adhesive layer 160 is made of an insulating material, the conductive film 156 only provides conductive paths in the vertical direction. Figure 8 As shown, the light-emitting element 104 is electrically connected to the active element 162 via a conductive pad 106, conductive particles 158, and wires 164. The use of conductive film 156 facilitates the mass production of the light-emitting device 100D.

[0118] Various changes and adjustments can be made to the embodiments disclosed herein. Figure 9 This is a schematic cross-sectional view of a light-emitting device 100E according to some embodiments of the present disclosure. Figure 9 The light-emitting device 100E shown is... Figure 1G One of the differences of the light-emitting device 100A shown is that the light-emitting device 100E has a plurality of scattering particles 166 formed within the protective layer 132.

[0119] The materials for the scattering particles 166 include titanium dioxide (TiO2), aluminum oxide (Al2O3), zirconium dioxide (ZrO2), silicon dioxide (SiO2), tantalum pentoxide (Ta2O5), tungsten oxide (WO3), yttrium oxide (Y2O3), cerium dioxide (CeO2), antimony oxide (Sb2O3), niobium dioxide (NbO2), boron oxide (B2O3), zinc oxide (ZnO), indium oxide (In2O3), cerium fluoride (CeF3), magnesium fluoride (MgF2), calcium fluoride (CaF2), combinations thereof, or other suitable nanoparticles, and are not limited thereto. Forming the scattering particles 166 within the protective layer 132 contributes to the formation of a uniformly emitting light-emitting device 100E.

[0120] Various changes and adjustments can be made to the embodiments disclosed herein. Figure 10 This is a cross-sectional schematic diagram of a light-emitting device 100F according to some embodiments of the present disclosure. For example... Figure 10The light-emitting device 100F shown is Figure 1G One of the differences of the light-emitting device 100A shown is that the light-emitting device 100F has a microstructure 168 formed on the upper surface of the protective layer 132.

[0121] In some embodiments, the microstructure 168 may be a rough surface formed on the protective layer 132. In this embodiment, the microstructure 168 is formed by performing an etching or mechanical polishing process on the upper surface of the protective layer 132. In some embodiments, the microstructure 168 includes a plurality of microlenses. Forming the microstructure 168 helps to form a light-emitting device 100G with a large light scattering angle.

[0122] Various changes and adjustments can be made to the embodiments disclosed herein. Figure 11 This is a schematic cross-sectional view of a light-emitting device 100G according to some embodiments of the present disclosure. Figure 11 The light-emitting device 100G shown is Figure 1G One of the differences in the light-emitting device 100A shown is that the light-emitting device 100G further includes a semi-transparent layer 170 formed between the light-emitting element 104 and the color conversion elements 124, 126 and 128.

[0123] In some embodiments, the semi-transparent layer 170 may be a distributed Bragg reflector (DBR) structure. The semi-transparent layer 170 may comprise at least two materials with different refractive indices. For example, the semi-transparent layer 170 may comprise multiple silicon oxide films and multiple silicon nitride films. These silicon oxide films and silicon nitride films are arranged alternately. In some embodiments, the material of the semi-transparent layer 170 includes silicon oxynitride or other dielectric materials. Forming the semi-transparent layer 170 helps improve the luminous efficiency of the light-emitting device 100G.

[0124] Various changes and adjustments can be made to the embodiments disclosed herein. Figure 12 This is a schematic cross-sectional view of a light-emitting device 100H according to some embodiments of the present disclosure. For example... Figure 12 The light-emitting device 100G shown is Figure 11 One of the differences in the light-emitting device 100G shown is that the semi-transparent layer 170' of the light-emitting device 100H is surrounded by a light-shielding element 122. Forming the semi-transparent layer 170' helps to reduce the size of the light-emitting device 100H.

[0125] While the embodiments and advantages of this disclosure have been disclosed above, it should be understood that anyone skilled in the art can make modifications, substitutions, and refinements without departing from the spirit and scope of this disclosure. Furthermore, the scope of protection of this disclosure is not limited to the processes, machines, manufacturing, material composition, apparatus, methods, and steps described in the specific embodiments of this specification. Anyone skilled in the art can understand, from the disclosure of some embodiments of this disclosure, current or future developed processes, machines, manufacturing, material composition, apparatus, methods, and steps, as long as they can perform substantially the same function or obtain substantially the same results in the embodiments described herein, and can be used according to some embodiments of this disclosure. Therefore, the scope of protection of this disclosure includes the aforementioned processes, machines, manufacturing, material composition, apparatus, methods, and steps. In addition, each claim constitutes an individual embodiment, and the scope of protection of this disclosure also includes combinations of various claim claims and embodiments.

Claims

1. A light-emitting device, comprising: A substrate having a surface; A light-emitting element is disposed on the surface; A wavelength conversion element is disposed on the light-emitting element; A light-shielding element surrounding the wavelength conversion element, wherein the light-shielding element includes: A photoresist element, comprising a light-blocking material; and A cover layer covering the surface of the photoresist element; and An opening, in which the light-shielding element surrounds the opening; An organic material layer is located between the light-emitting element and the light-shielding element, wherein at least a portion of the organic material layer is located within the opening; and A filter layer is disposed on the wavelength conversion element, wherein the filter layer overlaps the photoresist element in the normal direction of the surface.

2. The light-emitting device as described in claim 1, characterized in that, The capping layer includes silicon.

3. The light-emitting device as described in claim 1, characterized in that, The overlay covers the upper surface and sides of the photoresist element.

4. The light-emitting device as claimed in claim 3 further includes a support structure surrounding the light-emitting element, and the upper surface of the photoresist element faces the support structure.

5. The light-emitting device as claimed in claim 1, characterized in that, The thickness of the cover layer is less than the thickness of the photoresist element.

6. The light-emitting device as claimed in claim 1, characterized in that, The photoresist element includes black photoresist.

7. The light-emitting device as claimed in claim 1, characterized in that, The thickness of the wavelength conversion element is greater than the thickness of the filter layer.

8. The light-emitting device as claimed in claim 1, characterized in that, The width of the filter layer is greater than the width of the wavelength conversion element.

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