Equipment and methods for processing substrates

Abstract

This invention provides a mask processing apparatus. The mask processing apparatus includes: a support unit configured to support and rotate a mask having a first pattern within a plurality of its units and a second pattern outside a region of the plurality of units; a heating unit including a laser irradiation module and a moving module, the laser irradiation module having a laser irradiator for irradiating the second pattern with laser light, the moving module being configured to change the position of the laser irradiation module; and a controller configured to control the support unit and the heating unit, wherein when a processing position is divided into four equal parts from a first quadrant to a fourth quadrant based on the center of the mask, the laser irradiator is positioned in the fourth quadrant and the first quadrant in a direction linearly moving from a standby position to the processing position, in the third quadrant in a direction perpendicular to the fourth quadrant, and in the second quadrant in a direction perpendicular to the first quadrant, and wherein the controller controls the rotation of the support unit such that the second pattern is positioned in the fourth quadrant.

Description

Background Technology

[0001] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method.

[0002] To manufacture semiconductor devices, various processes are performed on a substrate (such as a wafer), including photolithography, etching, ashing, ion implantation, and thin film deposition. Various processing liquids and gases are used in each process. Additionally, a drying process is performed on the substrate to remove the processing liquids used to treat it.

[0003] The photolithography process for forming patterns on a wafer includes an exposure process. The exposure process is a previously performed operation to cut the semiconductor integrated material attached to the wafer into a desired pattern. The exposure process can have various purposes, such as forming patterns for etching and forming patterns for ion implantation. During the exposure process, a mask, acting as a framework, is used to draw patterns on the wafer with light. When the semiconductor integrated material on the wafer (e.g., a photoresist on the wafer) is exposed to light, the chemical properties of the photoresist change according to the pattern formed by the light and the mask. When a developer is supplied to the photoresist, whose chemical properties change according to the pattern, the pattern is formed on the wafer.

[0004] To perform the exposure process accurately, the pattern formed on the mask needs to be precisely fabricated. To confirm that the pattern is formed in the desired form and with precision, the operator uses inspection equipment such as a scanning electron microscope (SEM) to examine the formed pattern. However, a large number of patterns are formed on a single mask. That is, a significant amount of time is required to inspect all the numerous patterns in order to inspect a single mask.

[0005] Therefore, a monitoring pattern capable of representing a pattern group comprising multiple patterns is formed on the mask. Additionally, an anchoring pattern capable of representing multiple pattern groups is formed on the mask. The operator can assess the quality of the pattern formed on the mask by inspecting the anchoring pattern. Furthermore, the operator can assess the quality of the patterns included in a pattern group by inspecting the monitoring pattern.

[0006] As described above, operators can effectively reduce the time required for mask inspection due to the monitoring and anchoring patterns formed on the mask. However, to improve the accuracy of mask inspection, it is preferable that the critical dimensions of the monitoring and anchoring patterns are the same.

[0007] When etching is performed to make the critical dimensions of the monitoring pattern and the anchor pattern equal, over-etching may occur at the patterns. For example, there may be multiple differences between the etching rate of the critical dimension of the monitoring pattern and the etching rate of the anchor pattern, and over-etching may occur at the critical dimensions of the monitoring pattern and the anchor pattern during repeated etching of the monitoring pattern and / or the anchor pattern to reduce the differences. When the etching process is performed precisely to minimize the occurrence of this over-etching, the etching process takes a significant amount of time. Therefore, a critical dimension correction process is additionally performed to precisely correct the critical dimensions of the patterns formed on the mask.

[0008] Figure 1 This paper illustrates a normal distribution of the first critical dimension CDP1 and the second critical dimension CDP2 (critical dimensions of the anchoring pattern) of the mask's monitoring pattern before the critical dimension correction process, which is performed as the final step during mask manufacturing. Furthermore, both the first critical dimension CDP1 and the second critical dimension CDP2 have a size smaller than the target critical dimension. Additionally, as can be seen from... Figure 2 For reference, before performing the critical dimension correction process, there is an intentional deviation between the critical dimensions (CD, critical dimension) of the monitoring pattern and the anchor pattern. Furthermore, the anchor pattern is additionally etched during the critical dimension correction process to make the critical dimensions of the two patterns identical.

[0009] During the critical size correction process, etching chemicals are supplied to the substrate to achieve target critical sizes for the first critical size CDP1 and the second critical size CDP2. However, when the etching chemicals are uniformly supplied to the substrate, even if one of the first critical size CDP1 or the second critical size CDP2 reaches the target critical size, the other critical size is difficult to achieve. Furthermore, the deviation between the first critical size CDP1 and the second critical size CDP2 does not decrease. Summary of the Invention

[0010] Embodiments of the present invention provide a substrate processing apparatus and a substrate processing method for efficiently processing substrates.

[0011] Embodiments of the present invention provide a substrate processing apparatus and a substrate processing method for ensuring that the critical dimensions of patterns formed on a substrate are consistent.

[0012] Embodiments of the present invention provide a substrate processing apparatus and a substrate processing method for correcting the irradiation direction of a laser irradiating a substrate.

[0013] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0014] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a support unit configured to support a substrate having a first pattern and a second pattern, the second pattern being formed at a position different from the first pattern; a liquid supply unit for supplying processing liquid to the substrate supported on the support unit; a heating unit configured to irradiate the substrate to which the processing liquid is supplied with a laser and heat either the first pattern or the second pattern; and an error checking unit configured to check the error between the laser irradiation position and a preset target position.

[0015] In one embodiment, the error checking unit includes: a coordinate system disposed at the same height as the substrate supported on the support unit; and a support frame for supporting the coordinate system.

[0016] In one embodiment, the heating unit includes: a laser irradiation unit configured to irradiate the laser; and an tilting member configured to tilt the irradiation direction of the laser irradiated by the laser irradiation unit.

[0017] In one embodiment, the heating unit further includes: a body mounted on the laser irradiation unit and the tilting member, the body including an irradiation end portion for irradiating the laser; and a driver for rotating the body and / or moving the body in an up / down direction.

[0018] In one embodiment, the heating unit further includes an image module configured to monitor the laser irradiated by the laser irradiation unit.

[0019] In one embodiment, the substrate processing apparatus further includes a controller for controlling the heating unit, wherein the controller controls the laser irradiation unit to irradiate the coordinate system with the laser from the irradiation end portion at a first height, the first height being the height of the irradiation end portion when the laser is irradiated onto the substrate, and the controller uses the image module to check whether an error occurs between the irradiation position of the laser and the target position.

[0020] In one embodiment, the controller measures a second height as the body moves in the up / down direction, the second height being the height of the irradiated end portion when the irradiation position is at the position closest to the target position.

[0021] In one embodiment, the controller determines the tilt angle of the laser irradiated by the laser irradiation unit by using the difference between the first height and the second height and the gap between the irradiation position and the target position at the first height.

[0022] In one embodiment, the controller controls the tilting member to tilt in the irradiation direction of the laser irradiated by the laser irradiation unit based on the tilt angle.

[0023] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a housing having an internal space; a processing container disposed in the internal space and providing a processing space for processing a substrate, the substrate being a mask having a first pattern and a second pattern, the second pattern being formed at a different position than the first pattern; a support unit configured to support the substrate in the processing space; a liquid supply unit configured to supply processing liquid to the substrate supported by the support unit; a heating unit configured to heat either the first pattern or the second pattern by irradiating the substrate with the supplied processing liquid using a laser; and an error checking unit configured to check the gap between the laser irradiation position and a preset target position, wherein the error checking unit includes: a coordinate system having a top surface disposed at the same height as the top surface of the substrate supported by the support unit; and a support frame supporting the coordinate system.

[0024] In an embodiment, the heating unit includes: a laser irradiation module configured to irradiate the laser; an image module configured to monitor the laser irradiated by the laser irradiation module and / or the substrate; and an optical module, wherein the laser irradiation module includes: a laser irradiation unit; and a beam expander for controlling the characteristics of the laser irradiated by the laser irradiation unit, and wherein the image module includes: an image acquisition member configured to acquire an image; and an illumination member configured to provide light such that the image acquisition member can acquire the image, and wherein the optical module includes: a first reflective member configured to change the irradiation direction of the laser irradiated by the laser irradiation unit; and a second reflective member configured to change the imaging direction of the image acquisition member and the irradiation direction of the light, wherein when viewed from above, the irradiation direction of the laser, the imaging direction of the image acquisition member, and the irradiation direction of the light have the same axis.

[0025] In an embodiment, the heating unit includes: a tilting member configured to tilt the irradiation direction of the laser irradiated by the laser irradiation unit; a body on which the laser irradiation unit and the tilting member are mounted, the body including an irradiation end portion configured to irradiate the laser; and a driver for rotating the body and / or moving the body in an up / down direction, wherein the substrate processing apparatus further includes a controller for controlling the heating unit, and the controller: controls the laser irradiation unit such that the irradiation end portion irradiates the laser onto the coordinate system at a first height, the first height being the height of the irradiation end portion when the laser irradiates the substrate; checks, via the image module, whether an error occurs between the irradiation position of the laser and the target position; if the error occurs, measures a second height while moving the body in the up / down direction, the second height being the height of the irradiation end portion when the irradiation position is closest to the target position; and determines the tilt angle of the laser irradiated by the laser irradiation unit by the difference between the first height and the second height and the difference between the irradiation position and the target position at the first height.

[0026] This invention provides a substrate processing method. The substrate processing method includes: a process preparation step, process preparation; and a process processing step, wherein after the process preparation step, the substrate is processed by irradiating it with a laser by a laser irradiation unit. The process preparation step includes an error checking step, which checks the error between the irradiation position of the laser and a preset target position by irradiating the laser from the laser irradiation unit at a coordinate system located at the same position as the substrate from a first height. The first height is the height at which the laser irradiation unit irradiates the laser at the process processing step.

[0027] In one embodiment, the process preparation step further includes an error measurement step of measuring the gap between the irradiation position and the target position if the error is confirmed.

[0028] In one embodiment, the process preparation step further includes a step of moving the laser irradiation unit in an up / down direction to measure a height change of a second height, the second height being the height of the laser irradiation unit when the irradiation position is closest to the target position.

[0029] In an embodiment, the process preparation step further includes an angle calculation step of obtaining the difference between the first height and the second height and obtaining the tilt angle of the laser irradiated from the laser irradiation unit through the gap between the irradiation position and the target position.

[0030] In an embodiment, the process preparation step further includes an angle correction step that tilts the irradiation direction of the laser irradiated from the laser irradiation unit based on the tilt angle obtained at the angle calculation step.

[0031] In one embodiment, the tilting of the irradiation direction at the angle correction step is accomplished by tilting the laser irradiation unit.

[0032] In one embodiment, the tilting of the irradiation direction in the angle correction step is accomplished by tilting a reflective member, which is configured to reflect the laser irradiated by the laser irradiation unit.

[0033] In an embodiment, the process steps include: a liquid processing step for supplying a processing liquid to the substrate, the substrate being a mask having a first pattern and a second pattern, the second pattern being formed at a position different from the first pattern; and a heating step for irradiating the substrate to which the processing liquid is supplied with the laser.

[0034] According to embodiments of the present invention, substrates can be processed efficiently.

[0035] According to embodiments conceived in this invention, the critical dimensions of patterns formed on a substrate can be made consistent.

[0036] According to embodiments of the present invention, the irradiation direction of a laser irradiating a substrate can be corrected.

[0037] The effects of this invention are not limited to those described above, and other effects not mentioned will become apparent to those skilled in the art from the following description. Attached Figure Description

[0038] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, the same reference numerals in the various drawings refer to the same parts, and wherein:

[0039] Figure 1 The normal distribution of the critical dimensions of the monitoring pattern and the anchoring pattern is shown.

[0040] Figure 2 This is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention.

[0041] Figure 3 It schematically shows that in Figure 2 The state of the substrate being processed in the liquid processing chamber.

[0042] Figure 4 schematically shown Figure 2 An example of a liquid handling chamber.

[0043] Figure 5 yes Figure 4 A top view of the liquid handling chamber.

[0044] Figure 6 It shows Figure 4 The heating unit consists of a main body, a laser module, an image module, and an optical module.

[0045] Figure 7 yes Figure 6 The top view of the image module.

[0046] Figure 8 It shows Figure 4 Error checking unit and support unit of the liquid handling chamber.

[0047] Figure 9 yes Figure 8 Top view of the error checking unit.

[0048] Figure 10 This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0049] Figure 11 It shows in Figure 10 In the process preparation step, the substrate processing equipment checks the error status between the laser irradiation position and the preset target position.

[0050] Figure 12 The execution was shown Figure 10 The status of the substrate processing equipment in the location information acquisition step.

[0051] Figure 13 The execution was shown Figure 10 The state of the substrate processing equipment in the liquid processing step.

[0052] Figure 14 The execution was shown Figure 10 The state of the substrate processing equipment during the heating step.

[0053] Figure 15 The execution was shown Figure 10 The status of the substrate processing equipment during the rinsing step.

[0054] Figure 16 This is a flowchart illustrating an error correction method according to an embodiment of the present invention.

[0055] Figure 17 It shows the method for execution Figure 16 The status of the substrate processing equipment during error checking and error measurement steps.

[0056] Figure 18 This was observed from the image module of the heating unit. Figure 17 A view of the coordinate system.

[0057] Figure 19 It shows the method for execution Figure 16 The status of the substrate processing equipment for the height change step and angle calculation step.

[0058] Figure 20 This was observed from the image module of the heating unit. Figure 19 A view of the coordinate system.

[0059] Figure 21 The tilting member is shown to tilt the laser irradiation unit. Detailed Implementation

[0060] The inventive concept can be modified and taken in various forms, and specific embodiments of the inventive concept will be shown and described in detail in the accompanying drawings. However, the embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions included within the spirit and scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies may be omitted where it may obscure the essence of the inventive concept.

[0061] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the word "the" is also intended to include the plural form unless the context clearly indicates otherwise. It will be further understood that the term "comprising," as used herein, specifies the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Furthermore, the term "example" is intended to refer to an example or illustration.

[0062] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or section from another region, layer, or section. Therefore, without departing from the teachings of the inventive concept, the first element, first component, first region, first layer, or first section discussed below may be referred to as a second element, second component, second region, second layer, or second section.

[0063] It should be understood that when an element or layer is referred to as "on another element or layer," "connected to," "attached to," or "covering" another element or layer, it may be directly on, connected to, attached to, or cover the other element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as "directly on another element or layer," "directly connected to," or "directly attached to" another element or layer, there are no intermediate elements or layers. Other terms such as "between," "adjacent," or "nearby" should be interpreted in the same manner.

[0064] Unless otherwise defined, all terms used herein (including technical or scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept pertains. Terms such as those defined in common dictionaries should be interpreted in accordance with the context of the relevant art and should not be interpreted as ideal or overly formal, unless clearly defined in this application.

[0065] In the following text, reference will be made to Figures 2 to 21 The embodiments of the present invention are described in detail.

[0066] Figure 2 This is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention.

[0067] refer to Figure 2 The substrate processing apparatus includes an indexing module 10, a processing module 20, and a controller 30. According to an embodiment, when viewed from above, the indexing module 10 and the processing module 20 can be arranged along one direction. Hereinafter, the arrangement direction of the indexing module 10 and the processing module 20 is referred to as the first direction X, the direction perpendicular to the first direction X when viewed from above is referred to as the second direction Y, and the direction perpendicular to both the first direction X and the second direction Y is referred to as the third direction Z.

[0068] The indexing module 10 transfers the substrate M from the container C containing the substrate M to the processing module 20, and stores the substrate M, which has already been processed at the processing module 20, in the container C. The longitudinal direction of the indexing module 10 can be arranged in the second direction Y. The indexing module 10 can have a loading port 12 and an indexing frame 14. The loading port 12 can be positioned on the opposite side of the processing module 20 relative to the indexing frame 14. The container storing the substrate M is placed on the container CR. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be arranged along the second direction Y.

[0069] As container C, a sealed container, such as a front-opening collection box (FOUP), can be used. Container C can be placed on loading port 12 by a conveying device (not shown) (such as an overhead conveyor, overhead conveyor, or automated guided vehicle) or by an operator.

[0070] Indexing robot 120 can be disposed at indexing frame 14. In indexing frame 14, a guide rail 124 with a longitudinal direction in a second direction Y can be disposed, and indexing robot 120 can move along guide rail 124. Indexing robot 120 includes a hand 122 on which a substrate M is placed, and the indexing hand 122 can be configured to move back and forth, rotate in a third direction Z, and move along the third direction Z. Multiple hands 122 can be configured to be spaced apart from each other in the up / down direction. Multiple hands 122 can move back and forth independently of each other.

[0071] Controller 30 can control the substrate processing equipment. The controller may include a process controller comprising a microprocessor (computer) that performs control of the substrate processing equipment, a user interface such as a keyboard (through which the operator inputs commands to manage the substrate processing equipment), a display showing the operating status of the substrate processing equipment, and a memory unit that stores processing schemes (i.e., control programs that execute the processing procedures of the substrate processing equipment by controlling the process controller, or programs that execute components of the substrate processing equipment based on data and processing conditions). Additionally, the user interface and the memory unit may be connected to the process controller. The processing schemes may be stored in a storage medium in the memory unit, and the storage medium may be a hard disk, a portable disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0072] The processing module 20 may include a buffer unit 200, a transfer chamber 300, and a liquid processing chamber 400. The buffer unit 200 provides space for the substrate M placed into and removed from the processing module 20 to temporarily reside. The liquid processing chamber 400 performs a liquid processing procedure on the substrate M by supplying liquid to it. The transfer chamber 300 transfers the substrate M between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0073] The transfer chamber 300 may have a longitudinal direction arranged in the first direction X. The buffer unit 200 may be positioned between the indexing module 10 and the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 may be located on one side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 may be arranged along the second direction Y. The drying chamber 500 and the transfer chamber 300 may be positioned along the second direction Y. The buffer unit 200 may be positioned at one end of the transfer chamber 200.

[0074] According to an embodiment, liquid processing chambers 400 can be disposed on both sides of transfer chamber 300. Next to transfer chamber 300, liquid processing chambers 400 can be arranged in an A×B pattern along a first direction X and a third direction Z, respectively (where A and B are natural numbers greater than 1 or 1, respectively). Transfer chamber 300 includes transfer robot 320. In transfer chamber 300, a guide rail 324 with a longitudinal direction in the first direction X can be disposed, and transfer robot 320 can move along the guide rail 342. Transfer robot 320 includes a hand 322 on which a substrate M is placed, and the hand 322 can be configured to move back and forth, rotate about a third direction Z, and move along the third direction Z. Multiple hands 322 are configured to be spaced apart from each other in the up / down direction, and multiple hands 322 can move back and forth independently of each other.

[0075] The buffer unit 200 has multiple buffers on which the substrate M is placed. The buffers can be positioned separately from each other in the third direction Z. The front and rear of the buffer unit 200 are open. The front is the surface facing the indexing module 10, and the rear is the surface facing the transfer chamber 300. The indexing robot 120 can access the buffer unit 200 through the front, and the transfer robot 320, which will be described later, can access the buffer unit 200 through the rear.

[0076] The substrate M processed in the liquid processing chamber 400 will be described in detail below.

[0077] Figure 3 It schematically shows that in Figure 2 The state of the substrate being processed in the liquid processing chamber.

[0078] refer to Figure 3 The object to be processed in the liquid processing chamber 400 can be any of a wafer, glass, and a photomask. For example, the substrate M processed in the liquid processing chamber 400 can be a photomask that serves as a "frame" for use in the exposure process.

[0079] The substrate M may be rectangular. The substrate M may serve as a photomask acting as a "frame" during the exposure process. At least one reference mark AK may be marked on the substrate M. For example, multiple reference marks AK may be formed in each corner region of the substrate M. The reference mark AK may be a mark called an alignment key used when aligning the substrate M. Furthermore, the reference mark AK may be a mark used to derive the position of the substrate M. For example, the image module 470, described later, can acquire an image by imaging the reference mark AK and transmit the acquired image to the controller 30. The controller 30 can then analyze the image including the reference mark AK to detect the precise position of the substrate M. Additionally, the reference mark AK can be used to determine the position of the substrate M when it is being transported.

[0080] Cells CE can be formed on the substrate M. For example, at least one cell CE can be formed, or multiple cells CE. Multiple patterns can be formed at each cell CE. The pattern formed at each cell CE can be defined as a pattern group. The pattern formed at each cell CE may include an exposure pattern EP and a first pattern P1. A second pattern P2 may be represented in an area outside the cell area where multiple cells can be formed.

[0081] An exposure pattern EP can be used to form an actual pattern on a substrate M. A first pattern P1 can be a single-cell representative pattern representing the exposure pattern EP within a cell CE. Alternatively, when multiple cells CE are provided, a first pattern is provided in each cell, thereby allowing for multiple first patterns P1. Furthermore, multiple first patterns P1 can be formed within a single cell CE. The first pattern P1 can have a form that combines portions of each exposure pattern EP. The first pattern P1 can be referred to as a monitoring pattern. Furthermore, the first pattern P1 can be referred to as a critical size monitoring macro.

[0082] When the operator examines the first pattern P1 using a scanning electron microscope (SEM), they can estimate whether the form of the exposure pattern EP formed in a cell CE is good or poor. Furthermore, the first pattern P1 can serve as an inspection pattern for examining the exposure pattern EP. Additionally, the first pattern P1 can be any of the exposure patterns EP used in the actual exposure process. Moreover, the first pattern P1 can serve not only as an inspection pattern for examining exposure patterns but also as an exposure pattern used in actual exposure.

[0083] The second pattern P2 can be a whole-cell representative pattern representing the exposure pattern EP on the entire cell of the substrate M. For example, the second pattern P2 can have a form that combines portions of each of the first patterns P1.

[0084] When the operator inspects the second pattern P2 using a scanning electron microscope (SEM), they can estimate whether the form of the exposure pattern EP formed on a substrate M is good or poor. Furthermore, the second pattern P2 can serve as an inspection pattern. Alternatively, the second pattern P2 can be an inspection pattern not used during the actual exposure process. The second pattern P2 can be referred to as an anchor pattern.

[0085] The substrate processing apparatus disposed in the liquid processing chamber 400 will be described in detail below. The following description will exemplify a process performed in the liquid processing chamber 400 during a fine critical dimension correction (FCC) process, which is the final step during the process of manufacturing a mask for the exposure process.

[0086] The substrate M to be placed in and processed in the liquid processing chamber 400 may be a pre-treated substrate M. The critical dimensions of the first pattern P1 and the second pattern P2 of the substrate M to be placed in the liquid processing chamber 400 may be different from each other. For example, the critical dimension of the first pattern P1 may be larger than the critical dimension of the second pattern P2. In one embodiment, the critical dimension of the first pattern P1 may have a first width (e.g., 69 nm). The critical dimension of the second pattern P2 may have a second width (e.g., 68.5 nm).

[0087] Figure 4 schematically shown Figure 2 An embodiment of the liquid handling chamber, and Figure 5 yes Figure 4 A top view of the liquid handling chamber. (Reference) Figure 4 and Figure 5 The liquid handling chamber 400 may include a housing (not shown), a support unit 420, a bowl-shaped object 430, a liquid supply unit 440, a heating unit 450, and an error checking unit 490.

[0088] The housing (not shown) may have an internal space 412. The housing (not shown) may have an internal space 412 providing a bowl-shaped object 430. The housing (not shown) may have an internal space 412 for housing a liquid supply unit 440 and a heating unit 450. The housing (not shown) may be provided with a doorway (not shown) through which the substrate M can be inserted and removed. The doorway can be selectively opened / closed by a door (not shown). The inner wall surface of the housing (not shown) may be coated with a material highly resistant to chemicals supplied by the liquid supply unit 440.

[0089] Furthermore, an exhaust port 414 may be formed on the bottom surface of the housing 410. The exhaust port 414 may be connected to an exhaust component, such as a pump, capable of venting the internal space 412. Therefore, smoke and other substances that may be generated in the internal space 412 can be discharged to the outside through the exhaust port 414.

[0090] The support unit 420 can support the substrate W in the processing space 431 of the bowl-shaped object 430, which will be described later. The support unit 420 can support the substrate M. The support unit 420 can rotate the substrate M.

[0091] The support unit 420 may include a chuck 422, a support shaft 424, a drive member 425, and a support pin 426. The support pin 426 may be mounted on the chuck 422. The chuck 422 may have a plate shape with a preset thickness. The support shaft 424 may be connected to the bottom of the chuck 422. The support shaft 424 may be a hollow shaft. Furthermore, the support shaft 424 may be rotated by the drive member 425. The drive member 425 may be a hollow motor. When the drive member 425 rotates the support shaft 424, the chuck 422 connected to the support shaft 424 may rotate. The substrate M placed on the support pin 426 mounted on the chuck 422 may also rotate together with the chuck 422 due to its rotation.

[0092] Support pins 426 can support substrate M. Multiple support pins 426 can be arranged along the circumferential direction of the top chuck 421, so that when viewed from above, the support pins 426 can have a generally circular shape. Furthermore, when viewed from above, the support pins 426 can have a downwardly recessed / stepped portion corresponding to the edge region of substrate M. Therefore, the support pins 426 can include a first surface supporting the bottom of the edge region of substrate M and a second surface on the side facing the edge region of substrate M to limit lateral movement of the substrate in the event of substrate rotation. At least one support pin 426 can be provided. In embodiments, multiple support pins 426 can be provided. The number of support pins 422 can be set to correspond to the number of corners of substrate M having a rectangular shape. The support pins 422 can support the back side (bottom surface) of substrate M spaced apart from the top surface of chuck 421.

[0093] The bowl-shaped object 430 may have a cylindrical form with an open top. The bowl-shaped object 430 may have a processing space 431, and the substrate M may undergo liquid processing and heat treatment in the processing space 431. The bowl-shaped object 430 can prevent the processing liquid supplied to the substrate M from splashing and being transferred to the housing 410, the liquid supply unit 440, and the heating unit 450.

[0094] The bowl-shaped object 430 may include a bottom portion 433, a vertical portion 434, and an inclined portion 435. When viewed from above, the bottom portion 433 may have an opening into which a support shaft 424 can be inserted. The vertical portion 434 may extend from the bottom portion 433 in a third direction Z. The inclined portion 435 may extend from the vertical portion 434 to be inclined upward. For example, the inclined portion 435 may extend obliquely toward the substrate M supported by the support unit 420. A discharge hole 432 may be formed at the bottom portion 433 to discharge the processing liquid supplied by the liquid supply unit 440 to the outside. In addition, the bowl-shaped object 430 may be coupled to a lifting / lowering member 436, and its position may be changed along the third direction Z. The lifting / lowering member 436 may be a drive device for moving the bowl-shaped object 430 in the up / down direction. The lifting / lowering member 436 can move the bowl 430 upward when liquid treatment and / or heating treatment is performed on the substrate M, and can move the bowl 430 downward when the substrate M is placed into the internal space 412 or when the substrate M is removed from the internal space 412.

[0095] The liquid supply unit 440 can supply a processing liquid for liquid treatment of the substrate M. The liquid supply unit 440 can supply the processing liquid to the substrate M supported by the support unit 420. The processing liquid can be an etching liquid or a rinsing liquid. The etching liquid can be a chemical. The etching liquid can etch patterns formed on the substrate M. The etching liquid can be referred to as an etchant. The rinsing liquid can clean the substrate M. The rinsing liquid can be provided as a known chemical liquid.

[0096] The liquid supply unit 440 may include a nozzle 441, a fixed body 442, a rotating shaft 443, and a rotating component 444.

[0097] Nozzle 441 can supply processing liquid to substrate M supported by support unit 420. One end of nozzle 441 can be connected to fixing body 442, and the other end can extend from fixing body 442 toward substrate M. Nozzle 411 can extend from fixing body 442 in a first direction X.

[0098] Nozzle 411 may include a first nozzle 411a, a second nozzle 411b, and a third nozzle 411c. Any one of the first nozzle 411a, the second nozzle 411b, and the third nozzle 411c can supply the chemical C in the aforementioned treated liquid. Additionally, the last of the first nozzle 411a, the second nozzle 411b, and the third nozzle 411c can supply a different type of chemical C than the chemical C supplied by the other of the first nozzle 411a, the second nozzle 411b, or the third nozzle 411c.

[0099] The main body 442 can fix and support the nozzle 441. The main body 442 can be connected to a rotating shaft 443 that rotates in the third direction Z via a rotating member 444. When the rotating member 444 rotates the rotating shaft 443, the main body 442 can rotate about the third direction Z. Therefore, the outlet of the nozzle 441 can move between a liquid supply position, which is a position for supplying processing liquid to the substrate M, and a standby position, which is a position for not supplying processing liquid to the substrate M.

[0100] Heating unit 450 can heat substrate M. Heating unit 450 can heat a portion of substrate M. Heating unit 450 can heat substrate M having a liquid film formed by supplying chemical C. Heating unit 450 can heat patterns formed on substrate M. Heating unit 450 can heat some of the patterns formed on substrate M. Heating unit 450 can heat either the first pattern P1 or the second pattern P2. For example, heating unit 450 can heat the second pattern P2 of the first pattern P1 and the second pattern P2.

[0101] The heating unit 450 may include a main body 451, a driver 453, a shaft 454, a moving component 455, a laser module 460, an image module 470, and an optical module 480.

[0102] The main body 451 may be a container with mounting space. The main body 451 may be equipped with a laser illumination module 460, an image module 470, and an optical module 480, which will be described later. Furthermore, the main body 451 may include an illumination end portion 452. Laser L emitted by the laser module 460 (described later) can be emitted onto the substrate M through the illumination end portion 452. Additionally, light irradiated by the illumination unit 472 (described later) can be provided through the illumination end portion 452. Furthermore, image imaging by the image acquisition member 471 (described later) can be performed through the illumination end portion 452.

[0103] The driver 453 can be a motor. The driver 453 can be connected to a shaft 454. Furthermore, the shaft 454 can be connected to a body 451. The shaft 454 can be connected to the body 451 via a moving member 455. The driver 453 can rotate the shaft 454. When the shaft 454 rotates, the body 451 can rotate. Therefore, the position of the irradiation end portion 452 of the body 451 can also be changed. For example, the position of the irradiation end portion 452 can be changed using a third direction Z as the axis of rotation. When viewed from above, the center of the irradiation end portion 452 can move in an arc around the shaft 454. When viewed from above, the center of the irradiation end portion 452 can move to pass through the center of the substrate M supported by the support unit 420. The irradiation end portion 452 can move between a heating position for irradiating the substrate M with laser L and a standby position as a standby position when no heating is performed on the substrate M. Furthermore, the driver 453 can move the shaft 454 in the up / down direction. That is, the driver 453 can change the position of the irradiation end portion 452 in the up / down direction. Alternatively, multiple drives 453 can be provided, one of which can be configured as a rotary motor for rotating the shaft 454, and another can be configured as a linear motor for moving the shaft 454 in the up / down direction.

[0104] The movable member 455 can be disposed between the shaft 454 and the main body 451. The movable member 455 can be an LM guide. The movable member 455 can move the main body 451 in the lateral direction. The movable member 455 can move the main body 451 along the first direction X and / or the second direction Y. The position of the irradiation end portion 452 of the heating unit 450 can be modified in various ways by the movable member 455 and the driver 453.

[0105] Figure 6 It shows Figure 4The heating unit consists of a main body, a laser module, an image module, and an optical module. Figure 7 yes Figure 6 The top view of the image module.

[0106] refer to Figure 6 and Figure 7 The laser irradiation unit 461, beam expander 462, and tilting member 463 can be mounted on the main body 451. Furthermore, the image module 470 can be mounted on the main body 451. Additionally, the optical module 480 can be mounted on the main body 451.

[0107] The laser module 460 may include a laser irradiation unit 461, a beam expander 462, and a tilting member 463. The laser irradiation unit 461 irradiates a laser L. The laser irradiation unit 461 emits a laser L with a flatness. The shape / profile of the laser L emitted by the laser irradiation unit 461 can be adjusted by the beam expander 462. For example, the diameter of the laser L emitted by the laser irradiation unit 461 can be changed by the beam expander 462. The diameter of the laser L emitted by the laser irradiation unit 461 can be expanded or reduced by the beam expander 462.

[0108] The tilting member 463 can tilt the irradiation direction of the laser L emitted by the laser irradiation unit 461. For example, the tilting member 463 can rotate the laser irradiation unit 461 based on an axis to tilt the irradiation direction of the laser L irradiated by the laser irradiation unit 461. The tilting member 463 may include a motor.

[0109] Image module 470 can monitor the laser L emitted by laser illumination unit 461. Image module 470 may include image acquisition component 471, illumination component 472, first reflector 473, and second reflector 474. Image acquisition component 471 can acquire images of the coordinate system 491 of substrate M and / or error checking unit 490, which will be described later. Image acquisition component 471 may be a camera. Image acquisition component 471 can acquire images including points illuminated by laser L illuminated by laser illumination unit 461.

[0110] The illumination component 472 can provide light, making it easy to perform image acquisition by the image acquisition component 471. The light provided by the illumination component 472 can be reflected sequentially along the first reflector 473 and the second reflector 474.

[0111] When viewed from above, the optical module 480 is coaxial with the illumination direction of the laser L illuminated by the laser illumination unit 461, the imaging direction of the image acquisition member 471, and the illumination direction of the light provided by the illumination member 472. The illumination member 472 can transmit light to the area illuminated by the laser L through the optical module 480. Additionally, the image acquisition member 471 can acquire images, such as images / photographs, of the area illuminated by the laser L in real time. The optical module 480 may include a first reflective member 481, a second reflective member 482, and a lens 483.

[0112] The first reflective member 481 can change the irradiation direction of the laser L emitted by the laser irradiation unit 461. For example, the first reflective member 481 can change the irradiation direction of the laser L irradiated in the horizontal direction to a vertically downward direction. In addition, the laser L refracted by the first reflective member 481 can pass through the lens 483 and the irradiation end portion 452 in sequence, and can be transmitted to the substrate M to be processed or the coordinate system 491, which will be described later.

[0113] The second reflective member 482 can change the imaging direction of the image acquisition member 471. For example, the second reflective member 482 can change the imaging direction of the image acquisition member 471 from the horizontal direction to the vertically downward direction. In addition, the second reflective member 482 can change the illumination direction of the light transmitted sequentially through the illumination member 472, which passes through the first reflector 473 and the second reflector 474, from the horizontal direction to the vertically downward direction.

[0114] Furthermore, when viewed from above, the first reflective member 481 and the second reflective member 482 can be positioned at the same location. The first reflective member 481 and the second reflective member 482 can be configured such that the imaging direction aligns with the laser path. Additionally, the second reflective member 482 can be positioned above the first reflective member 481. Furthermore, the first reflective member 481 and the second reflective member 482 can be tilted at the same angle.

[0115] Figure 8 It shows Figure 4 The error checking unit and support unit of the liquid handling chamber, and Figure 9 yes Figure 8 A top view of the error checking unit.

[0116] refer to Figure 8 and Figure 9The error checking unit 490 can check whether an error occurs between the irradiation position of the laser L and the preset target position TP. For example, the error checking unit 490 can be installed in the internal space 412. Furthermore, when the irradiation end portion 452 is in the aforementioned standby position, the error checking unit 490 can be installed below the irradiation end portion 452. The error checking unit 490 may include a coordinate system 491, a plate 492, and a support frame 493.

[0117] The coordinate system 491 can be referred to as a global coordinate system. A preset target position TP can be marked on the coordinate system 491. Additionally, the coordinate system 491 can include a scale to check the error between the target position TP and the irradiation position illuminated by the laser L. The coordinate system 491 can be mounted on a plate 492. The plate 492 can be supported by a support frame 493. The height of the coordinate system 491, defined by the plate 492 and the support frame 493, can be the same as the height of the substrate M supported by the support unit 420. For example, the height from the bottom surface of the housing (not shown) to the top surface of the coordinate system 491 can be the same as the height from the bottom surface of the housing (not shown) to the top surface of the substrate M supported by the support unit 420. This is to match the height of the irradiated end portion 452 when checking errors using the error checking unit 490 and the height of the irradiated end portion 452 when heating the substrate W. When the irradiation direction of the laser L irradiated by the laser irradiation unit 461 is slightly skewed relative to the third direction Z, the irradiation position of the laser L can be varied according to the height of the irradiation end portion 452, and therefore, the coordinate system 491 can be set at the same height as the substrate M supported by the support unit 420.

[0118] The substrate processing method according to an embodiment of the present invention will be described in detail below. The substrate processing method described below can be performed using the liquid processing chamber 400 described above. Furthermore, the controller 30 can control the components of the liquid processing chamber 400 so that the liquid processing chamber 400 can perform the substrate processing method described below. For example, the controller 30 can generate control signals for controlling at least one of the support unit 420, the lifting / lowering member 436, the liquid supply unit 440, and the heating unit 450, so that the components of the liquid processing chamber 400 can perform the substrate processing method described below.

[0119] Figure 10 This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0120] refer to Figure 10 The substrate processing method according to an embodiment of the present invention may include a substrate placement step S10, a process preparation step S20, a position information acquisition step S30, an etching step S40, a rinsing step S50, and a substrate removal step S60.

[0121] In the substrate placement step S10, the door can be opened to access the placement / removal port formed on the housing (not shown). Additionally, in the substrate placement step S10, the transfer robot 320 can place the substrate M onto the support unit 420. When the transfer robot 320 places the substrate M onto the support unit 420, the lifting / lowering member 436 can lower the position of the bowl-shaped object 430.

[0122] The process preparation step S20 can be performed after the substrate M has been placed. In process preparation step S20, it can be confirmed whether an error has occurred at the irradiation position of the laser L irradiating the substrate M. For example, in process preparation step S20, the laser module 460 can irradiate the coordinate system 491 of the error checking unit 490 with the test laser L. If the test laser L irradiated by the laser module 470 matches the preset target position TP indicated at the coordinate system 491, such as... Figure 11 As shown, it is determined that the laser irradiation unit 461 is not misaligned, and the subsequent position information acquisition step S30 can be executed. Furthermore, in the process preparation step S20, not only can it be checked whether an error has occurred at the irradiation position of the laser L, but the configuration of the liquid processing chamber 400 can also be restored to its initial state.

[0123] At position information acquisition step S30, the position of substrate W can be confirmed. At position information acquisition step S30, position information of the pattern formed on substrate M can be acquired. That is, at position information acquisition step S30, information about chemical C, the position of substrate W to which rinsing liquid R is to be supplied, and the position of the pattern to which laser L will irradiate can be obtained. The position information obtained at position information acquisition step S30 may include coordinates related to the center of substrate M and coordinates related to the position of the pattern.

[0124] The position information acquisition step S30 can be performed by moving the irradiation end portion 452 of the heating unit 450 between a standby position and a heating position, and by rotating the substrate M in one direction by the support unit 420. When the irradiation end portion 452 is moved and the substrate M is rotated in one direction, the irradiation end portion 452 may have reference marks AK that coincide with each other at a specific time point, such as... Figure 12As shown. In this case, the image module 470 can acquire an image of the reference mark AK. The controller 30 can obtain the coordinate values ​​of the reference mark AK from the image acquired by the image module 470. In addition, the controller 30 can store in advance the left and right widths of the substrate M, the coordinate data of the center point of the substrate M, the first pattern P1, the second pattern P2, and the position of the exposure pattern EP within the substrate M. The controller 30 can obtain the position information of the center point of the substrate M, the first pattern P1, and the second pattern P2 based on the obtained coordinate values ​​of the reference mark AK and the previously stored data.

[0125] In etching step S40, the pattern formed on the substrate M can be etched. In etching step S40, etching can be performed relative to the pattern formed on the substrate M such that the critical dimensions of the first pattern P1 and the second pattern P2 are consistent with each other. Etching step S40 can be a critical dimension correction process for correcting the critical dimension difference between the first pattern P1 and the second pattern P2. Etching step S40 may include a liquid treatment step S41 and a heating step S42.

[0126] Liquid processing step S41 can be the step where the liquid supply unit 440 supplies the etchant (which is chemical C) to the substrate M, such as... Figure 13 As shown. In the liquid processing step S41, the support unit 420 may not rotate the substrate M. In order to accurately irradiate the specific pattern with the laser L in the heating step S42, which will be described later, the distortion of the position of the substrate M should be minimized, because the position of the substrate M may be distorted when the substrate M is rotated. In addition, the amount of chemical C supplied in the liquid processing step S41 is sufficient to form a puddle of chemical C supplied to the substrate M. For example, the amount of chemical C supplied in the liquid processing step S41 may cover the entire top surface of the substrate M, but may be supplied in such an amount that it does not flow downwards or, even if it does flow downwards from the substrate M, it will not be to a great extent. If necessary, the etchant may be supplied to the entire top surface of the substrate M when the nozzle 441 changes its position.

[0127] In heating step S42, the substrate M can be heated by irradiating the substrate M with laser L. In heating step S42, as... Figure 14 As shown, the heating module 460 can heat the substrate M, which has a liquid film formed due to the supply of chemical C, by irradiating the substrate M with laser L.

[0128] In heating step S42, laser L can irradiate a specific area of ​​substrate M. The temperature of the specific area irradiated by laser L can be increased. Therefore, the etching degree of chemical C on the area irradiated by laser L can be increased. Additionally, in heating step S42, laser L can irradiate either the first pattern P1 or the second pattern P2. For example, laser L can be emitted only to the second pattern P2 of the first pattern P1 and the second pattern P2. Therefore, the etching capability of chemical C with respect to the second pattern P2 is improved. Thus, the critical size of the first pattern P1 can be changed from a first width (e.g., 69 nm) to a target critical size (e.g., 70 nm). Furthermore, the critical size of the second pattern P2 can be changed from a second width (e.g., 68.5 nm) to a target critical size (e.g., 70 nm). That is, the critical size deviation of the pattern formed on substrate M can be minimized by improving the etching capability relative to some areas of substrate M. In rinsing step S50, the process byproducts generated in etching step S40 can be removed from substrate M.

[0129] In rinsing step S50, as Figure 15 As shown, rinsing liquid R can be supplied to a rotating substrate M to remove process byproducts formed on the substrate M. To dry the rinsing liquid R remaining on the substrate M as needed, the support unit 420 can rotate the substrate M at high speed to remove the rinsing liquid R remaining on the substrate M.

[0130] In substrate removal step S60, the processed substrate M can be removed from the internal space 412. In substrate removal step S60, the door can be opened at the insertion / removal port formed on the housing (not shown). Additionally, in substrate removal step S60, the transfer robot 320 can unload the substrate M from the support unit 420 and remove the unloaded substrate M from the internal space 412.

[0131] The following text describes in detail the method for correcting the distortion (referred to as the error correction method) in the case of distortion occurring in the irradiation direction of the laser L irradiated by the laser irradiation unit 461.

[0132] Figure 16 This is a flowchart illustrating an error correction method according to an embodiment of the present invention.

[0133] refer to Figure 16The error correction method of this invention may include a first error checking step S21, an error measurement step S22, a height change step S23, an angle calculation step S24, an angle correction step S25, and a second error checking step S26. Furthermore, the error correction method of this invention can be performed when no process processing steps (such as etching step S40 and rinsing step S50) are performed relative to the substrate M. For example, the error correction method of this invention can be performed in the process preparation step S20 described above.

[0134] In the first error checking step S21, the laser L can illuminate the coordinate system 491 of the error checking unit 490. When the laser L is illuminated at the first error checking step S21, the height of the irradiated end portion 452 can be the same as the height when the heating step S42 is performed relative to the substrate M (this can be referred to as the first height).

[0135] When there is no error between the target position TP displayed on coordinate system 491 and the illumination position of laser L, the error correction process can be terminated immediately. However, if... Figure 17 and Figure 18 As shown, when the error between the target position TP and the first irradiation position LP1 of the laser L can be measured (the first irradiation position can be the center position of the laser L irradiating the coordinate system 491 when the irradiation end portion 452 is in a standby position and its height is the first height mentioned above), the error measurement step S22 can be performed as follows.

[0136] In the error measurement step S22, when the error is confirmed at the first error check step S21, the first gap G1 between the first irradiation position LP1 and the target position TP can be measured. The controller 30 can store the measured first gap G1.

[0137] In the height-changing step S23, the height of the irradiation end portion 452 can be changed. In the height-changing position S23, a second height CH can be measured when the height of the irradiation end portion 452 is changed in the up / down direction. This second height is the height at which the irradiation position of the laser L is closest to the target position TP. Figure 19 and Figure 20 As shown. Furthermore, the irradiation position of laser L1 closest to the target position TP can be referred to as the second irradiation position LP2. Additionally, the space between the first irradiation position LP1 and the second irradiation position LP2 can be referred to as the second gap G2. The controller 30 can store the measured second height CH and second gap G2.

[0138] In angle calculation step S24, the difference between the first height OH and the second height CH can be obtained. Furthermore, the tilt angle θ of the laser L can be determined based on the first gap G1 and the height difference OH-CH between the first height OH and the second height CH. Additionally, when the irradiation end portion 452 moves between the first height OH and the second height CH, the irradiation position of the laser L moves between the second irradiation position LP2 and the first irradiation position LP1. In some cases, the second irradiation position LP2 may not completely coincide with the target position TP. However, since the second irradiation position LP2 is the closest irradiation position to the target position TP, the difference between the first gap G1 and the second gap G2 can be negligible. Therefore, even if the tilt angle θ of the laser L is determined based on the first gap G1 and the height difference OH-CH between the first height OH and the second height CH, the accuracy of the obtained tilt angle θ can be very high.

[0139] In angle correction step S25, the irradiation direction of the laser L irradiated by the laser irradiation unit 461 can be tilted based on the tilt angle θ obtained in angle calculation step S24. In angle correction step S25, as... Figure 21 As shown, the tilting member 463 can rotate the laser irradiation unit 461 to tilt the irradiation direction of the laser L. In the angle correction step S25, the irradiation direction of the laser L can be tilted so that the tilt angle θ becomes 0 (i.e., the irradiation direction of the laser L is parallel to the third direction Z).

[0140] In the second error checking step S26, the error between the irradiation position of laser L and the target position TP can be checked in the same manner as in the first error checking step S21. If an error is confirmed, the aforementioned error measurement step S22, height change step S23, angle calculation step S24, and angle correction step S25 can be executed again in sequence. If no error is confirmed, the error correction method can be terminated. Furthermore, the absence of error should be interpreted as including not only the case where the irradiation position of laser L and the target position TP completely coincide, but also the case where even a slight error exists but is within the threshold error range.

[0141] Although the above example has been described as an example of tilting the laser irradiation unit 461 by tilting the member 463, the inventive concept is not limited thereto. For example, the tilting member 463 may be configured to tilt the first emitting member 481 instead of the laser irradiation unit 461. In addition, multiple tilting members 463 may be provided, and one of the tilting members 463 may tilt the laser irradiation unit 461, while another of the tilting members 463 may tilt the first reflecting member 481.

[0142] In the above example, it has been described that the tilting member 463 includes a motor, but the inventive concept is not limited thereto. For example, the tilting member 463 may not include a motor. For example, the tilting member 463 may include a configuration such as screws or bolts, allowing an operator to manually correct the irradiation direction of the laser L.

[0143] The effects of this invention are not limited to those described above, and any effects not mentioned will be clearly understood by those skilled in the art based on this specification and the accompanying drawings.

[0144] Although preferred embodiments of the inventive concept have been shown and described up to now, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept relates can implement the inventive concept differently without departing from the essence of the inventive concept as claimed in the claims, and should not be interpreted or modified separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing apparatus, comprising: A support unit configured to support a substrate having a first pattern and a second pattern, the second pattern being formed at a position different from the first pattern; A liquid supply unit for supplying processing liquid to the substrate supported on the support unit; A heating unit configured to irradiate the substrate to which the processing liquid is supplied with a laser and to heat either the first pattern or the second pattern; as well as An error checking unit is configured to check the error between the laser irradiation position and a preset target position.

2. The substrate processing apparatus according to claim 1, wherein the error checking unit comprises: A coordinate system, wherein the coordinate system is set at the same height as the base plate supported on the support unit; as well as A support frame for supporting the coordinate system.

3. The substrate processing apparatus according to claim 2, wherein the heating unit comprises: A laser irradiation unit, configured to irradiate the laser; and An inclined member is configured to tilt the irradiation direction of the laser irradiated by the laser irradiation unit.

4. The substrate processing apparatus according to claim 3, wherein the heating unit further comprises: The main body is mounted on the laser irradiation unit and the inclined member, and the main body includes an irradiation end portion for irradiating the laser. as well as A driver for rotating the body and / or moving the body in the up / down direction.

5. The substrate processing apparatus of claim 4, wherein the heating unit further comprises an image module configured to monitor the laser irradiated by the laser irradiation unit.

6. The substrate processing apparatus according to claim 5 further includes a controller for controlling the heating unit, and The controller controls the laser irradiation unit to irradiate the coordinate system with the laser from the irradiation end portion at a first height, the first height being the height of the irradiation end portion when the laser is irradiated onto the substrate, and the controller uses the image module to check whether an error occurs between the irradiation position of the laser and the target position.

7. The substrate processing apparatus of claim 6, wherein the controller measures a second height when moving the body in the up / down direction, the second height being the height of the irradiated end portion when the irradiation position is at the position closest to the target position.

8. The substrate processing apparatus of claim 7, wherein the controller determines the tilt angle of the laser irradiated by the laser irradiation unit by means of the difference between the first height and the second height and the gap between the irradiation position and the target position at the first height.

9. The substrate processing apparatus of claim 8, wherein the controller controls the tilting member to tilt in the irradiation direction of the laser irradiated by the laser irradiation unit based on the tilt angle.

10. A substrate processing apparatus, comprising: A housing having an internal space; A processing container is disposed in the internal space and provides a processing space for processing a substrate, the substrate being a mask having a first pattern and a second pattern, the second pattern being formed at a position different from the first pattern; A support unit configured to support the substrate at the processing space; A liquid supply unit configured to supply processing liquid to a substrate supported by the support unit; A heating unit configured to heat either the first pattern or the second pattern by irradiating the substrate to which the processing liquid is supplied with a laser; as well as An error checking unit is configured to check the gap between the laser irradiation position and a preset target position, and The error checking unit includes: A coordinate system having a top surface disposed at the same height as the top surface of the substrate supported by the support unit; as well as A support frame that supports the coordinate system.

11. The substrate processing apparatus according to claim 10, wherein the heating unit comprises: A laser irradiation module, configured to irradiate the laser; An image module configured to monitor laser light irradiated by the laser irradiation module and / or the substrate; and Optical module, and The laser irradiation module includes: Laser irradiation unit; and A beam expander, the beam expander being used to control the characteristics of the laser irradiated by the laser irradiation unit, and The image module includes: Image acquisition component, the image acquisition component being configured to acquire an image; and An illumination component, configured to provide light, enables the image acquisition component to acquire the image, and The optical module includes: A first reflective member, configured to change the irradiation direction of the laser irradiated by the laser irradiation unit; and A second reflective member is configured to change the imaging direction of the image acquisition member and the illumination direction of the light. When viewed from above, the irradiation direction of the laser, the imaging direction of the image acquisition component, and the irradiation direction of the light have the same axis.

12. The substrate processing apparatus according to claim 11, wherein the heating unit comprises: An inclined member, the inclined member being configured to tilt the irradiation direction of the laser irradiated by the laser irradiation unit; A main body, wherein the laser irradiation unit and the tilting member are mounted on the main body, the main body including an irradiation end portion configured to irradiate the laser; and A driver for rotating the body and / or moving the body in the up / down direction, and The substrate processing equipment further includes a controller for controlling the heating unit, and The controller controls the laser irradiation unit so that the irradiation end portion irradiates the coordinate system with the laser at a first height, where the first height is the height of the irradiation end portion when the laser irradiates the substrate. The image module is used to check whether there is an error between the laser's irradiation position and the target position. If the error occurs, a second height is measured while moving the main body along the up / down direction. This second height is the height of the irradiated end portion when the irradiation position is closest to the target position. The tilt angle of the laser irradiated by the laser irradiation unit is determined by the difference between the first height and the second height and the difference between the irradiation position and the target position at the first height.

13. A substrate processing method, comprising: A substrate is provided having a first pattern and a second pattern, wherein the second pattern is formed at a position different from the first pattern; Process preparation steps, process preparation; as well as The process processing step involves supplying a processing liquid to the substrate after the process preparation step, and processing the substrate by irradiating it with a laser by a laser irradiation unit, thereby heating either the first pattern or the second pattern. The process preparation step includes an error checking step, which is a step of checking the error between the laser irradiation position and the preset target position by irradiating the laser from the laser irradiation unit onto a coordinate system set at the same position as the substrate from a first height. The first height is the height at which the laser irradiation unit irradiates the laser at the process processing step.

14. The substrate processing method according to claim 13, wherein the process preparation step further includes an error measurement step of measuring the gap between the irradiation position and the target position if the error is confirmed.

15. The substrate processing method of claim 14, wherein the process preparation step further comprises a step of moving the laser irradiation unit in an up / down direction to measure a height change of a second height, the second height being the height of the laser irradiation unit when the irradiation position is closest to the target position.

16. The substrate processing method according to claim 15, wherein the process preparation step further includes an angle calculation step of obtaining the difference between the first height and the second height and obtaining the tilt angle of the laser irradiated from the laser irradiation unit through the gap between the irradiation position and the target position.

17. The substrate processing method according to claim 16, wherein the process preparation step further includes an angle correction step that tilts the irradiation direction of the laser irradiated from the laser irradiation unit based on the tilt angle obtained at the angle calculation step.

18. The substrate processing method according to claim 17, wherein the tilting of the irradiation direction at the angle correction step is accomplished by tilting the laser irradiation unit.

19. The substrate processing method of claim 17, wherein the tilting of the irradiation direction in the angle correction step is accomplished by tilting a reflective member configured to reflect laser light irradiated by the laser irradiation unit.

20. The substrate processing method according to any one of claims 13 to 19, wherein the process processing steps include: A liquid processing step for supplying processing liquid to the substrate, the substrate being a mask having a first pattern and a second pattern, the second pattern being formed at a location different from the first pattern; as well as A heating step for irradiating the substrate with the processing liquid by means of the laser.

Images