A virtual pattern filling method and semiconductor device layout

Abstract

This invention discloses a virtual graphic filling method, comprising: obtaining an unfilled layout; calculating the boundary distance between a first boundary and a second boundary of an unfillable region on the layout; setting extension bars on the first boundary and the second boundary respectively to extend the boundary distance of the unfillable region, such that the extended boundary distance of the unfillable region is an integer multiple of the virtual graphic span plus the virtual graphic spacing, wherein the virtual graphic span is equal to the sum of the virtual graphic spacing and the virtual graphic width, and the width of the extension bar is less than or equal to the virtual graphic spacing; arranging the virtual graphic along the first boundary and the second boundary of the extended unfillable region, wherein the first boundary and the second boundary are opposite to each other.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit design, and more specifically to a virtual graphic filling method and semiconductor device layout. Background Technology

[0002] In Dynamic Random Access Memory (DRAM) technology, the main capacitor cells are called cell arrays, and the area outside the capacitors is called the peripheral area. During the manufacturing process, for the same layer, the cell array area and the peripheral area require different processes. The process for the cell array area is more complex than that for the peripheral area, requiring more exposures and etching steps. During the intermediate exposure and etching processes, the peripheral area needs to be masked first, leaving only the cell array area exposed. To address the load effect problem during the etching of the cell array, virtual patterns are introduced.

[0003] Etching techniques include wet etching and dry etching. Dry etching is generally used for smaller, critical dimensions, and it typically employs plasma etching technology. Dry etching relies on chemically active free radicals generated by high-glow discharge to react with the material being etched, forming volatile products that continuously corrode the material. The etching load effect occurs because uneven pattern density distribution leads to slower etching rates in denser areas and faster rates in sparser areas, resulting in over-etching in sparse regions. This uneven pattern density distribution is typically addressed by using virtual pattern layers that fill the entire remaining space across a given span. Summary of the Invention

[0004] The purpose of this invention is to provide a virtual graphics filling method and a semiconductor device layout.

[0005] This application provides a virtual graphic filling method, the method comprising: obtaining an unfilled layout; calculating the boundary distance between a first boundary and a second boundary of an unfillable region on the layout; setting extension bars on the first boundary and the second boundary respectively to extend the boundary distance of the unfillable region, such that the extended boundary distance of the unfillable region is an integer multiple of the virtual graphic span plus the virtual graphic spacing, the virtual graphic span being equal to the sum of the virtual graphic spacing and the virtual graphic width, and the width of the extension bar being less than or equal to the virtual graphic spacing; arranging the virtual graphic along the first boundary and the second boundary of the extended unfillable region, wherein the first boundary and the second boundary are opposite to each other.

[0006] In some embodiments, the method further includes: calculating the integer multiple n; the integer multiple n is the integer n obtained by dividing the boundary distance h by the virtual graphic span c; the expression for the integer multiple n is n = f[h / c], where f is the function that takes the largest integer not greater than h / c, and n is a positive integer.

[0007] In some embodiments, the method further includes: calculating the height S of the extension bar; the height S of the extension bar is n times the virtual graphic span c plus the virtual graphic spacing b, minus the boundary distance h, and then divided by 2; the expression for the height S of the extension bar is S = [cn + bh] / 2.

[0008] In some embodiments, the method further includes: extending the virtual graphics located at the first boundary and the second boundary along a first direction to the boundary of the fillable region, the first direction being parallel to the first boundary; arranging the virtual graphics at intervals in a second direction in the remaining space of the fillable region on the layout, the second direction being perpendicular to the first direction; and removing the virtual graphics that overlap with the unfillable region.

[0009] In some embodiments, arranging the virtual graphics along the first and second boundaries of the expanded unfillable region, wherein the first boundary is opposite to the second boundary, includes: arranging 1-2 virtual graphics at one end of the first boundary of the expanded unfillable region; and arranging 1-2 virtual graphics at one end of the second boundary of the expanded unfillable region.

[0010] In some embodiments, arranging 1-2 virtual graphics at one end of the first boundary of the expanded unfillable area includes: arranging 1-2 virtual graphics of the same length as the first boundary at one end of the first boundary with a minimum spacing, wherein the minimum spacing is the minimum spacing that meets the manufacturing process conditions.

[0011] In some embodiments, arranging 1-2 virtual graphics at one end of the second boundary of the expanded unfillable area includes: arranging 1-2 virtual graphics of the same length as the second boundary at one end of the second boundary with a minimum spacing, wherein the minimum spacing is the minimum spacing that meets the manufacturing process conditions.

[0012] In some embodiments, the remaining space of the fillable area on the map is used to arrange the virtual graphics at intervals in a second direction, the second direction being perpendicular to the first direction, which includes arranging the virtual graphics at intervals according to a preset spacing in the second direction.

[0013] In some embodiments, the method further includes removing the extension strips respectively set at the first boundary and the second boundary of the unfillable area.

[0014] In some embodiments, the virtual graphic is a strip graphic.

[0015] This application also provides a semiconductor device layout, including: an unfillable region and a fillable region; virtual graphics are respectively arranged on a first boundary and a second boundary of the unfillable region, the first boundary being opposite to the second boundary; the virtual graphics arranged on the first boundary and the second boundary extend along a first direction to the boundary of the fillable region, the first direction being parallel to the first boundary; in the remaining space of the fillable region on the layout, the virtual graphics are arranged at intervals in a second direction, the second direction being perpendicular to the first direction; the distance between the virtual graphics located on the first boundary and the virtual graphics located on the second boundary is an integer multiple of the virtual graphic span plus the virtual graphic spacing, the virtual graphic span being equal to the sum of the virtual graphic spacing and the virtual graphic width.

[0016] In some embodiments, at least two virtual graphics are arranged on the first and second boundaries of the unfillable region, extending along the first direction to the boundary of the fillable region.

[0017] In some embodiments, the integer multiple n is the boundary distance h between the first boundary and the second boundary divided by the virtual graphic span c and then rounded to the nearest integer n; the expression for the integer multiple n is n = f[h / c], where f is the function that takes the largest integer not greater than h / c, and n is a positive integer.

[0018] In some embodiments, the spacing between the virtual graphics arranged at intervals in the second direction is a preset spacing; the spacing between at least two virtual graphics arranged on the first boundary and the second boundary respectively is a preset spacing.

[0019] This application provides a virtual graphic filling method, which calculates the boundary distance between a first boundary and a second boundary of an unfillable region on a layout; extends the boundary distance of the unfillable region by setting extension bars on the first boundary and the second boundary, respectively, so that the extended boundary distance of the unfillable region is an integer multiple of the virtual graphic span plus the virtual graphic spacing, where the virtual graphic span is equal to the sum of the virtual graphic spacing and the virtual graphic width; and arranges the virtual graphics along the extended first boundary and the second boundary of the unfillable region, with the first boundary and the second boundary opposite each other. This method ensures that the virtual graphics arranged at the first boundary maintain a symmetrical gap to the first boundary of the unfillable region, and the virtual graphics arranged at the second boundary maintain a symmetrical gap to the second boundary of the unfillable region, resulting in a symmetrical and uniformly distributed virtual graphic around the unfillable region. Attached Figure Description

[0020] Figure 1 This is a flowchart of a virtual graphic filling method according to an embodiment of the present invention;

[0021] Figure 2 This is a schematic diagram of an embodiment of the present invention in which extension strips are respectively provided at the first and second boundaries of an unfillable area;

[0022] Figure 3 This is a schematic diagram of a semiconductor device layout according to an embodiment of the present invention.

[0023] Figure label:

[0024] 201: Unfillable area; 202: Virtual graphic; 203: Extension bar; 204: Preset spacing. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to specific embodiments and the accompanying drawings. It should be understood that these descriptions are merely exemplary and not intended to limit the scope of the invention. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0026] In existing technologies, filling virtual graphics involves first calculating the unfillable region 201, then filling the fillable region with a strip of virtual graphics at a specified span, and finally removing any overlap with the unfillable region 201. However, because the strip of virtual graphics has a directionality (e.g., the virtual graphics are horizontal), while the left and right sides can have the minimum spacing when filling the unfillable region 201, there will be a large, random gap at the top and bottom edges of the unfillable region 201.

[0027] This application provides a virtual graphic filling method that can ensure that the virtual graphic maintains a symmetrical gap with the first and second boundaries of the unfillable area, and that the virtual graphic is symmetrically and evenly distributed around the unfillable area. Figure 1 Flowchart of the method for filling virtual graphics, see reference. Figure 1 The method includes the following steps:

[0028] S101, Get the unfilled layout.

[0029] The unfilled map includes an unfillable region 201, and the area surrounding the unfillable region 201 is an fillable region.

[0030] S102, calculate the boundary distance between the first and second boundaries of the unfillable region on the map.

[0031] Figure 2 See the diagram illustrating the setting of extension bars at the first and second boundaries of the unfillable region. Figure 2 Calculate the boundary distance between the first and second boundaries of the unfillable region 201 on the map.

[0032] S103, extension bars are respectively set on the first boundary and the second boundary to extend the boundary distance of the unfillable area, so that the boundary distance of the extended unfillable area is an integer multiple of the virtual graphic span plus the virtual graphic spacing, the virtual graphic span is equal to the sum of the virtual graphic spacing and the virtual graphic width, and the width of the extension bar is less than or equal to the virtual graphic spacing.

[0033] Optionally, the virtual graphic spacing is the preset spacing of 204. The first boundary can be the upper boundary of the unfillable area, and the second boundary can be the lower boundary of the unfillable area.

[0034] See Figure 2 Extension strips 203 are provided on the first boundary and the second boundary respectively to extend the boundary distance of the unfillable area 201.

[0035] Optionally, Figure 3 This is a schematic diagram of a semiconductor device layout provided in an embodiment of this application. See also... Figure 2 and Figure 3 Calculate the integer multiple n; the integer multiple n is the boundary distance h divided by the virtual graphic span c and then the integer n; the expression for the integer multiple n is n = f[h / c], where f is the function that takes the largest integer not greater than h / c, and n is a positive integer.

[0036] Optionally, see Figure 2 and Figure 3Calculate the height S of the extension bar 203; the height S of the extension bar is n times the span c of the virtual graphic 202 plus the spacing b of the virtual graphic 202, minus the boundary distance h, and then divided by 2; the expression for the height S of the extension bar 203 is S = [cn + bh] / 2.

[0037] S104, arrange virtual graphics along the first and second boundaries of the expanded unfillable region, with the first boundary opposite to the second boundary.

[0038] Optionally, the virtual graphics 202 located at the first boundary and the second boundary are arranged along a first direction to the boundary of the fillable area, the first direction being parallel to the first boundary; in the remaining space of the fillable area on the layout, the virtual graphics 202 are arranged at intervals in a second direction, the second direction being perpendicular to the first direction; and the virtual graphics 202 that overlap with the unfillable area 201 are removed.

[0039] Assuming the first direction is horizontal, the second direction can be vertical. Virtual graphics 202 are arranged at intervals in the remaining space of the fillable area, perpendicular to the second direction.

[0040] Optionally, the virtual graphic 202 arranged on the first boundary has the same length as the first boundary, and the virtual graphic 202 arranged on the second boundary has the same length as the second boundary. The virtual graphic 202 located on the first boundary extends along a first direction to the boundary of the fillable area. The first direction can be parallel to the upper boundary of the non-fillable area 201, and the first direction can be a horizontal direction. The virtual graphic 202 located on the upper boundary extends horizontally to the boundary of the fillable area, and the virtual graphic 202 located on the lower boundary extends horizontally to the boundary of the fillable area.

[0041] Optionally, the virtual graphics 202 are arranged along the first and second boundaries of the extended unfillable region 201, wherein the first boundary and the second boundary are opposite to each other, including: arranging 1-2 virtual graphics 202 at one end of the first boundary of the extended unfillable region; and arranging 1-2 virtual graphics 202 at one end of the second boundary of the extended unfillable region 201.

[0042] Optionally, arranging 1-2 virtual graphics 202 at one end of the first boundary of the expanded unfillable area 201 includes: arranging 1-2 virtual graphics 202 of the same length as the first boundary at one end of the first boundary with a minimum spacing, wherein the minimum spacing is the minimum spacing that meets the manufacturing process conditions.

[0043] Optionally, arranging 1-2 virtual graphics 202 at one end of the second boundary of the expanded unfillable area 201 includes: arranging 1-2 virtual graphics 202 of the same length as the second boundary at one end of the second boundary with a minimum spacing, wherein the minimum spacing is the minimum spacing that meets the manufacturing process conditions.

[0044] Optionally, in the remaining space of the fillable area on the map, the virtual graphics 202 are arranged at intervals in a second direction, wherein the second direction is perpendicular to the first direction, including arranging the virtual graphics 202 at intervals according to a preset spacing in the second direction.

[0045] Optionally, the extension strips 203 provided at the first and second boundaries of the unfillable area are removed.

[0046] Figure 3 This is a schematic diagram of a semiconductor device layout provided in an embodiment of this application. See also... Figure 3 After removing the extension bars 203 set at the first and second boundaries of the unfillable region 201, the gap between the virtual graphic 202 arranged at the first boundary and the first boundary is equal to the gap between the virtual graphic 202 arranged at the second boundary and the second boundary. This ensures that the gaps between the virtual graphic 202 arranged at the first boundary and the first boundary of the unfillable region 201, and between the virtual graphic arranged at the second boundary and the second boundary of the unfillable region 201, are symmetrical.

[0047] Optionally, the virtual graphic 202 can be a strip graphic. The virtual graphic 202 can also be a bar graphic.

[0048] The virtual graphic filling method provided in this application can achieve a symmetrical gap between the virtual graphic arranged on the first boundary and the first boundary of the unfillable area, and between the virtual graphic arranged on the second boundary and the second boundary of the unfillable area. The virtual graphics are symmetrically and uniformly distributed around the unfillable area, and the spacing between the virtual graphics arranged at intervals in the second direction is equal, thereby making the graphic density distribution more uniform and reducing the etching load effect during the manufacturing process.

[0049] Figure 3 This is a schematic diagram of a semiconductor device layout provided in an embodiment of this application, with reference to... Figure 3In another aspect, this application provides a semiconductor device layout, including: an unfillable region 201 and a fillable region; virtual graphics 202 are respectively arranged on a first boundary and a second boundary of the unfillable region 201, the first boundary being opposite to the second boundary; the virtual graphics 202 arranged on the first boundary and the second boundary extend along a first direction to the boundary of the fillable region, the first direction being parallel to the first boundary; in the remaining space of the fillable region on the layout, the virtual graphics 202 are arranged at intervals in a second direction, the second direction being perpendicular to the first direction; the distance between the virtual graphics 202 located on the first boundary and the virtual graphics 202 located on the second boundary is an integer multiple of the span of the virtual graphics 202 plus the virtual graphics spacing, the virtual graphics span being equal to the sum of the virtual graphics spacing and the width of the virtual graphics 202.

[0050] Optionally, the distance between the virtual graphic 202 located at the first boundary and the first boundary is less than or equal to the virtual graphic spacing; the distance between the virtual graphic 202 located at the second boundary and the second boundary is less than or equal to the virtual graphic spacing. The virtual graphic spacing is the preset spacing 204.

[0051] In some embodiments, at least two virtual graphics 202 are arranged on the first boundary and the second boundary of the unfillable region 201, extending along the first direction to the boundary of the fillable region.

[0052] In some embodiments, the integer multiple n is the boundary distance h between the first boundary and the second boundary divided by the span c of the virtual graphic 202, and the result is an integer n; the expression for the integer multiple n is n = f[h / c], where f is the function that takes the largest integer not greater than h / c, and n is a positive integer.

[0053] In some embodiments, the spacing between the virtual graphics 202 arranged at intervals in the second direction in the remaining space of the fillable area on the layout is a preset spacing 204; the spacing between at least two virtual graphics 202 arranged on the first boundary and the second boundary respectively is a preset spacing 204.

[0054] The semiconductor device layout provided in this application can satisfy the requirement that virtual patterns are symmetrically and uniformly distributed around the unfillable area, and that the spacing between the virtual patterns arranged at intervals in the second direction is equal, thereby making the pattern density distribution more uniform and reducing the etching load effect during the manufacturing process.

[0055] It should be understood that the specific embodiments described above are merely illustrative or explanatory of the principles of the invention and do not constitute a limitation thereof. Therefore, any modifications, equivalent substitutions, improvements, etc., made without departing from the spirit and scope of the invention should be included within the protection scope of the invention. Furthermore, the appended claims are intended to cover all variations and modifications falling within the scope and boundaries of the appended claims, or equivalent forms of such scope and boundaries.

[0056] The above description does not provide detailed explanations of the technical aspects of each layer's patterning and etching. However, those skilled in the art should understand that various methods existing in the prior art can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above.

[0057] The above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A method for filling virtual graphics, characterized in that, include: Get the unfilled layout; Calculate the boundary distance between the first and second boundaries of the unfillable regions on the map; Extension bars are set at the first boundary and the second boundary respectively to extend the boundary distance of the unfillable area, so that the extended boundary distance of the unfillable area is an integer multiple of the virtual graphic span plus the virtual graphic spacing. The virtual graphic span is equal to the sum of the virtual graphic spacing and the virtual graphic width, and the width of the extension bar is less than or equal to the virtual graphic spacing. The virtual graphic is arranged along the first and second boundaries of the expanded unfillable region, with the first boundary opposite to the second boundary.

2. The method according to claim 1, characterized in that, The method further includes: Calculate the integer multiple n; The integer multiple n is the integer n obtained by dividing the boundary distance h by the virtual graphic span c; The expression for the integer multiple n is n = f[h / c], where f is the function that takes the largest integer not greater than h / c, and n is a positive integer.

3. The method according to claim 2, characterized in that, The method further includes: Calculate the height S of the extension bar; The height S of the extension bar is n times the virtual graphic span c plus the virtual graphic spacing b, minus the boundary distance h, and then divided by 2; The height S of the extension bar is expressed as S = [cn + bh] / 2.

4. The method according to claim 1, characterized in that, The method further includes: The virtual graphic located at the first boundary and the second boundary is arranged along a first direction to the boundary of the fillable area, wherein the first direction is parallel to the first boundary; The virtual graphics are arranged at intervals in the remaining space of the fillable area on the map in a second direction, which is perpendicular to the first direction; Remove the virtual graphics that overlap with the unfillable area.

5. The method according to claim 1, characterized in that, The virtual graphic is arranged along the first and second boundaries of the expanded unfillable region, wherein the first boundary is opposite to the second boundary, including: One or two virtual graphics are arranged at one end of the first boundary of the expanded unfillable region; One or two virtual graphics are arranged at one end of the second boundary of the expanded unfillable region.

6. The method according to claim 5, characterized in that, Arranging 1-2 virtual graphics at one end of the first boundary of the expanded unfillable region includes: Arrange 1-2 virtual graphics of the same length as the first boundary at one end of the first boundary according to the minimum spacing, wherein the minimum spacing is the minimum spacing that meets the manufacturing process conditions.

7. The method according to claim 5, characterized in that, The arrangement of 1-2 virtual graphics at one end of the second boundary of the expanded unfillable region includes: Arrange 1-2 virtual graphics of the same length as the second boundary at one end of the second boundary according to the minimum spacing, wherein the minimum spacing is the minimum spacing that meets the manufacturing process conditions.

8. The method according to claim 4, characterized in that, The remaining space of the fillable area on the map is used to arrange the virtual graphics at intervals in a second direction, the second direction being perpendicular to the first direction, including: The virtual graphics are arranged at preset intervals in the second direction.

9. The method according to claim 1, characterized in that, The method further includes: Remove the extension strips set at the first and second boundaries of the unfillable area.

10. The method according to claim 1, characterized in that, The virtual graphic is in the shape of a strip.

11. A semiconductor device layout, characterized in that, include: Unfillable and fillable regions; The first and second boundaries of the unfillable area are respectively arranged with virtual graphics, and the first boundary is opposite to the second boundary. The virtual graphic arranged on the first boundary and the second boundary extends along a first direction to the boundary of the fillable area, the first direction being parallel to the first boundary; The virtual graphics are arranged at intervals in the remaining space of the fillable area on the map in a second direction, which is perpendicular to the first direction; The distance between the virtual graphic located at the first boundary and the virtual graphic located at the second boundary is an integer multiple of the span of the virtual graphic plus the spacing between the virtual graphics, and the span of the virtual graphic is equal to the sum of the spacing between the virtual graphics and the width of the virtual graphic.

12. The layout according to claim 11, characterized in that, At least two virtual graphics are arranged on the first and second boundaries of the unfillable region, extending along the first direction to the boundary of the fillable region.

13. The layout according to claim 11, characterized in that, The integer multiple n is the integer n obtained by dividing the boundary distance h between the first boundary and the second boundary by the virtual graphic span c. The expression for the integer multiple n is n = f[h / c], where f is the function that takes the largest integer not greater than h / c, and n is a positive integer.

14. The layout according to claim 11, characterized in that, The spacing between the virtual graphics arranged at intervals in the second direction is a preset spacing; The spacing between at least two virtual graphics arranged on the first boundary and the second boundary is a preset spacing.

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