Energy selective antenna and design method thereof

Abstract

The present application relates to an energy selective antenna and a design method thereof, comprising: a dielectric plate. A main radiating unit, fixedly mounted on the top of the dielectric plate. A metal ground, provided at the bottom of the dielectric plate. Parasitic radiating units, relatively provided on both sides of the radiating edge of the main radiating unit. A PIN diode group, fixedly mounted between the main radiating unit and the parasitic radiating unit. A feeding interface, provided at the top of the main radiating unit and having an inner conductor and an outer conductor, the inner conductor passing through the dielectric plate and connected to the main radiating unit, and the outer conductor connected to one side of the metal ground. The energy selective antenna is designed as an integrated whole based on the integration of the energy selective surface and the antenna, which saves system space and avoids the influence of the energy selective surface on the antenna performance. At the same time, by changing the operating frequency of the antenna in different states, adaptive protection against high-power microwaves is achieved, effectively improving the security of the electronic communication system.

Description

Technical Field

[0001] The present application relates to the field of antenna technology, and in particular to an energy selective antenna and a design method thereof. Background Art

[0002] With the advancement of pulse power technology and microelectronics, electronic devices are increasingly miniaturized, more diverse, and more integrated. Operating frequencies are increasing, while power consumption is decreasing, leading to a lowering of the system's microwave sensitivity threshold. At the same time, the strong electromagnetic environment created by high-power microwaves poses a serious threat to the security of electronic communications systems. The high-energy pulses generated by high-power microwave equipment can interfere with or even damage receivers, sensors, and other sensitive components in communications or radar systems. Electromagnetic energy primarily enters the system through "front-door coupling" (such as antennas and sensors) and "back-door coupling" (such as apertures and cables). To protect sensitive equipment, shielding, filtering, absorption, reflection, and grounding are commonly used.

[0003] In recent years, the design of metasurfaces and metamaterials for high-power microwave protection has garnered significant attention. Energy-selective surfaces, in particular, operate by combining a well-designed metal surface with a diode to create a spatial energy filter sensitive only to the power density or field intensity of the incident wave, thereby achieving a nonlinear response to incident electromagnetic waves and adaptive protection against high-power energy. However, these structures typically consist of an array of multiple elements placed at the front end of the receiver, which not only takes up significant additional space but also adversely affects antenna performance.

[0004] Therefore, due to the design limitations of space field protection, general energy selective antennas cannot achieve high-power protection in a timely and effective manner, which reduces the security of electronic communication systems. Summary of the Invention

[0005] Based on this, it is necessary to provide a safer energy selective antenna and a design method thereof to address the above technical problems.

[0006] In a first aspect, the present application provides an energy selective antenna, comprising:

[0007] dielectric board;

[0008] A main radiation unit is fixedly mounted on the top of the dielectric plate;

[0009] A metal ground, provided at the bottom of the dielectric plate;

[0010] The parasitic radiation unit is arranged on both sides of the radiation edge of the main radiation unit;

[0011] A PIN diode group is fixedly installed between the main radiation unit and the parasitic radiation unit;

[0012] The feeding interface is arranged on the top of the main radiation unit and has an inner conductor and an outer conductor. The inner conductor passes through the dielectric plate and is connected to the main radiation unit, and the outer conductor is connected to one side of the metal ground.

[0013] In one embodiment, the parasitic radiation unit is symmetrical with respect to the main radiation unit and has a gap with the main radiation unit, and the PIN diode group is arranged in the gap.

[0014] In one embodiment, the main radiation unit and the parasitic radiation unit are configured as rectangular metal conductor patches.

[0015] In one embodiment, the PIN diode group has a switching characteristic to achieve switching of the antenna working state.

[0016] In one embodiment, the PIN diode group is disconnected in a low-power microwave environment and is turned on in a high-power microwave environment.

[0017] In one embodiment, the dielectric board is configured as a high-frequency printed circuit board.

[0018] In one embodiment, the PIN diode group includes two PIN diodes, namely a first PIN diode and a second PIN diode. The first PIN diode and the second PIN diode are in opposite directions and are connected in parallel.

[0019] In one embodiment, the main radiation unit is located at the center of the dielectric plate, and four PIN diode groups are provided and are centrally symmetrical about the center point of the dielectric plate.

[0020] In one embodiment, the center distances between the first PIN diode and the second PIN diode in each PIN diode group are equal.

[0021] In a second aspect, the present application provides a method for designing an energy selective antenna, for implementing the energy selective antenna described in the first aspect of the present application, the method comprising:

[0022] The main radiation unit is fixedly installed at the center position of the top of the dielectric plate;

[0023] The parasitic radiation units are symmetrically mounted on both sides of the radiation edge of the main radiation unit and are arranged at the same interval as the radiation edge of the main radiation unit;

[0024] Disposing four groups of PIN diodes connected in reverse parallel in the interval, and making the four groups of PIN diodes centrally symmetrical about the center point of the dielectric plate;

[0025] A feeding interface is provided on the top of the main radiating unit, and the outer conductor of the feeding interface is connected to the metal ground, and the inner conductor passes through the dielectric plate and is connected to the main radiating unit.

[0026] The energy-selective antenna and its design method connect the main radiating element and the parasitic radiating element via a PIN diode array. Power is fed to the main radiating element by providing a feed interface on the main radiating element. This integrated design of the energy-selective surface and the antenna saves system space to a certain extent and effectively avoids the impact of the energy-selective surface on antenna performance. Furthermore, the energy-selective antenna utilizes field-controlled frequency reconfiguration technology. The PIN diodes in the structure automatically switch their operating state according to the microwave environment, thereby changing the antenna's operating frequency. This achieves adaptive protection against high-power microwaves and effectively improves the security of electronic communication systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A top view of an energy selective antenna structure according to an embodiment of the present application;

[0028] Figure 2 is a reflection coefficient curve diagram of the energy selective antenna in different states of this embodiment;

[0029] Figure 3 is a transmission coefficient curve diagram of the energy selective antenna system in different states of this embodiment;

[0030] Figure 4 is the E-plane radiation pattern of the energy selective antenna of this embodiment;

[0031] Figure 5 is the H-plane radiation pattern of the energy selective antenna of this embodiment;

[0032] Figure 6 This is a flow chart of a design method for an energy selective antenna according to one embodiment of the present application.

[0033] In the figure: 100, dielectric plate; 200, PIN diode group; 210, first PIN diode; 220, second PIN diode; 300, metal ground; 400, parasitic radiation unit; 500, feeding interface; 600, main radiation unit. DETAILED DESCRIPTION

[0034] To make the purpose, technical solutions, and advantages of the embodiments of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0035] It should be noted that when a component is referred to as being "fixed to" or "disposed on" another component, it may be directly on the other component or there may be a central component. When a component is considered to be "connected to" another component, it may be directly connected to the other component or there may be a central component at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in the specification of this application are for illustrative purposes only and do not represent the only implementation method.

[0036] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0037] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it can mean that the first feature is directly in contact with the second feature, or the first feature and the second feature are indirectly in contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it can mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is higher in level than the second feature. When a first feature is "below," "below," or "below" a second feature, it can mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is lower in level than the second feature.

[0038] Unless otherwise defined, all technical and scientific terms used in the specification of this application have the same meaning as commonly understood by those skilled in the art to which this application belongs. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used in the specification of this application includes any and all combinations of one or more of the relevant listed items.

[0039] like Figure 1 As shown, in one embodiment, an energy selective antenna includes:

[0040] The dielectric plate 100 .

[0041] The main radiation unit 600 is fixedly mounted on the top of the dielectric plate 100 .

[0042] The metal ground 300 is provided at the bottom of the dielectric plate 100 .

[0043] The parasitic radiation unit 400 is disposed on both sides of the radiation edge of the main radiation unit 600 .

[0044] The PIN diode group 200 is fixedly installed between the main radiation unit 600 and the parasitic radiation unit 400 .

[0045] The feeding interface 500 is provided on the top of the main radiating unit 600 and has an inner conductor and an outer conductor. The inner conductor passes through the dielectric plate 100 and is connected to the main radiating unit 600, and the outer conductor is connected to one side of the metal ground 300.

[0046] The energy-selective antenna connects the main radiating element and the parasitic radiating element via a PIN diode array. Power is fed to the main radiating element via a feed interface provided on the main radiating element. This integrated design of the energy-selective surface and antenna significantly reduces system space and effectively mitigates the impact of the energy-selective surface on antenna performance. Furthermore, the energy-selective antenna utilizes field-controlled frequency reconfiguration technology. The PIN diodes in the structure automatically switch operating states based on the microwave environment, thereby changing the antenna's operating frequency. This provides adaptive protection against high-power microwaves and effectively improves the security of electronic communications systems.

[0047] In this embodiment, a gap is defined between the parasitic radiating element 400 and the main radiating element 600, within which the PIN diode group 200 is positioned. This gap can be determined based on the actual operating frequency. Both the main radiating element 600 and the parasitic radiating element 400 are configured as rectangular metal conductor patches, with dimensions determined based on the actual operating frequency and shapes modified to meet the specific requirements of the antenna's operating mode. The dielectric plate 100 utilizes a high-frequency printed circuit board, which can be selected based on the actual operating frequency. The metal ground 300 is grounded and supports the antenna body.

[0048] In this embodiment, four PIN diode groups 200 are provided. Each PIN diode group consists of a first PIN diode 210 and a second PIN diode 220 connected in anti-parallel. The four PIN diode groups 200 are centrosymmetrical about the center point of the antenna, ensuring the antenna's protection against high power throughout the entire signal cycle. The specific positions of the PIN diode groups 200 can be determined based on the electric field distribution on the main radiating element 600. Furthermore, the PIN diode groups 200 use their switching function to switch the antenna's operating state. The specific model can be selected based on actual needs. When the PIN diode groups 200 are disconnected in a low-power microwave environment, the antenna is in normal operation and can be used to transmit and receive signals. When the PIN diode groups 200 are turned on in a high-power microwave environment, the antenna is in a protection state. During this time, the operating frequency shifts and signals are reflected within the original operating frequency, reducing the impact of the high-power microwave environment on the antenna communication system.

[0049] In this embodiment, the dielectric plate 100, metal ground 300, parasitic radiating element 400, feed interface 500, and main radiating element 600 are all fabricated using a PCB process. The dielectric plate 100 is made of RF4 material with a dielectric constant of 4.4 and a loss tangent of 0.02. Its dimensions are 120 mm × 120 mm × 1.5 mm. The metal ground 300 has dimensions of 120 mm × 120 mm × 0.018 mm. The main radiating element 600 has dimensions of 26 mm × 20 mm × 0.018 mm. The parasitic radiating elements 400 on either side of it each have dimensions of 26 mm × 5 mm × 0.018 mm. The spacing between the main radiating element 600 and its two flanking parasitic radiating elements 400 is 1.2 mm. The center-to-center spacing between the feed interface 500 and the main radiating element 600 is 4.6 mm. The PIN diodes are combined into four groups in reverse parallel and arranged centrosymmetrically about the center point of the antenna. They are located at one-quarter of the radiating edge of the main radiating unit 600. The center distance between the first PIN diode 210 and the second PIN diode 220 in each group is 1.7 mm. The PIN diode model is NXP BAP51-02.

[0050] like Figure 2 As shown, in this embodiment, when the PIN diode is disconnected, the antenna is in a normal working state, the resonant frequency is 3.1 GHz, and its -10 dB relative impedance bandwidth is 3%. When the PIN diode is turned on, the resonant point shifts, and the antenna works in a protection state.

[0051] like Figure 3As shown, in this embodiment, when the antenna is operating in a normal state, the transmission coefficient of the system composed of the rectangular waveguide and the antenna in the working frequency band is approximately -2.2dB. When the antenna is in a protected state, the transmission coefficient of the system composed of the rectangular waveguide and the antenna in the working frequency band is lower than -45dB.

[0052] like Figure 4 and Figure 5 As shown, in this embodiment, the 3dB main lobe beam width of the energy selective antenna in the E-plane radiation direction is 120°, and in the H-plane radiation direction, the 3dB main lobe beam width is 92°.

[0053] It should be noted that the lobe where the antenna has the maximum radiation direction is usually called the main lobe, and the radiation power (field strength) on both sides of the main lobe is equal to 1 / 2 of the radiation power in the direction of the maximum value (field strength). ) at two points, the angle between these two points is called the main lobe half-power point angle, or the half-power constraint width, that is, the main lobe constraint width. The narrower the main lobe constraint width, the more power is enhanced in the maximum radiation direction and the greater the directivity coefficient.

[0054] like Figure 6 As shown, in one embodiment, a method for designing an energy selective antenna includes the following steps:

[0055] Step S610: fix the main radiation unit at the center of the top of the dielectric plate.

[0056] Step S620: The parasitic radiation units are symmetrically installed on both sides of the radiation edge of the main radiation unit and are set at the same interval as the radiation edge of the main radiation unit.

[0057] Step S630 : placing four groups of PIN diodes connected in reverse parallel in the gap, and making the four groups of PIN diodes centrosymmetric about the center point of the dielectric plate.

[0058] Step S640: a feeding interface is provided on the top of the main radiating unit, and the outer conductor of the feeding interface is connected to the metal ground, and the inner conductor passes through the dielectric plate and is connected to the main radiating unit.

[0059] The design method for the energy-selective antenna described above connects the main radiating element and the parasitic radiating element via a PIN diode group, and provides power to the main radiating element by providing a feed interface on the main radiating element. This design method, which integrates the energy-selective surface with the antenna, saves system space to a certain extent and effectively avoids the impact of the energy-selective surface on antenna performance. At the same time, the energy-selective antenna utilizes field-controlled frequency reconfigurable technology. The PIN diodes in the structure can automatically switch their operating states according to the microwave environment, thereby changing the antenna's operating frequency, achieving adaptive protection against high-power microwaves and effectively improving the security of the electronic communication system. The energy-selective antenna designed by this design method has a simple structure, is easy to understand in principle, and is easy to process and manufacture.

[0060] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0061] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. An energy selective antenna, characterized in that: include: dielectric board; A main radiation unit is fixedly mounted on the top of the dielectric plate; A metal ground, provided at the bottom of the dielectric plate; The parasitic radiation unit is arranged on both sides of the radiation edge of the main radiation unit; a PIN diode group, fixedly mounted between the main radiating element and the parasitic radiating element, the PIN diode group including two PIN diodes, namely a first PIN diode and a second PIN diode, the first PIN diode and the second PIN diode being in opposite directions and connected in parallel with each other; the main radiating element is located at the center of the dielectric plate, and four PIN diode groups are provided and are centrosymmetrical about the center point of the dielectric plate; The feeding interface is arranged on the top of the main radiation unit and has an inner conductor and an outer conductor. The inner conductor passes through the dielectric plate and is connected to the main radiation unit, and the outer conductor is connected to one side of the metal ground.

2. The energy selective antenna according to claim 1, wherein: The parasitic radiation unit is symmetrical with respect to the main radiation unit and has a gap with the main radiation unit, and the PIN diode group is arranged in the gap.

3. The energy selective antenna according to claim 1, wherein: The main radiation unit and the parasitic radiation unit are configured as rectangular metal conductor patches.

4. The energy selective antenna according to claim 1, wherein: The PIN diode group has a switching characteristic to realize switching of the antenna working state.

5. The energy selective antenna according to claim 4, characterized in that: The PIN diode group is disconnected in a low-power microwave environment and is turned on in a high-power microwave environment.

6. The energy selective antenna according to claim 1, characterized in that: The dielectric board is configured as a high-frequency printed circuit board.

7. The energy selective antenna according to claim 1, characterized in that: The center distances between the first PIN diode and the second PIN diode in each PIN diode group are equal.

8. A method for designing an energy selective antenna, for realizing the energy selective antenna according to any one of claims 1 to 7, characterized in that: The method comprises: The main radiation unit is fixedly installed at the center position of the top of the dielectric plate; The parasitic radiation units are symmetrically mounted on both sides of the radiation edge of the main radiation unit and are arranged at the same interval as the radiation edge of the main radiation unit; Disposing four groups of PIN diodes connected in reverse parallel in the interval, and making the four groups of PIN diodes centrally symmetrical about the center point of the dielectric plate; A feeding interface is provided on the top of the main radiating unit, and the outer conductor of the feeding interface is connected to the metal ground, and the inner conductor passes through the dielectric plate and is connected to the main radiating unit.

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