Module comprising an elastic wave device

Abstract

A module including an elastic wave device includes: a wiring substrate; an elastic wave device mounted to the wiring substrate; a first metal pattern formed on an outer edge portion of the wiring substrate; and a sealing portion that hermetically seals the elastic wave device; the first metal pattern has a concave-convex shaped portion or a jagged portion, and the sealing portion connects the first metal pattern and an exposed portion of the wiring substrate. Thus, a module including an elastic wave device having excellent adhesion between the sealing portion and the wiring substrate can be provided.

Description

Technical Field

[0001] This disclosure relates to a module comprising an elastic wave device. Background Technology

[0002] Japanese Patent Document 1 (JP2019-54354) illustrates a technology related to an elastic wave device.

[0003] The elastic wave device is mounted on the module's wiring substrate along with other electronic devices. The elastic wave device, along with the other electronic devices, is sealed by a sealing element. In this case, the adhesion between the sealing element and the wiring substrate needs to be improved. Summary of the Invention

[0004] In view of the above-mentioned problems, the present disclosure aims to provide a module containing an elastic wave device with excellent adhesion between the sealing part and the wiring substrate.

[0005] This disclosure includes a module for an elastic wave device, comprising:

[0006] Wiring substrate;

[0007] An elastic wave device is mounted on the wiring substrate;

[0008] A first metallic pattern is formed on the outer edge portion of the wiring substrate; and

[0009] The sealing part provides an airtight seal for the elastic wave device;

[0010] The first metal pattern has a structured portion, and the sealing portion is engaged with the exposed portion of the wiring substrate and the first metal pattern.

[0011] In one embodiment of this disclosure, the module comprising the elastic wave device further includes:

[0012] A first electronic device, mounted on the wiring substrate and different from the elastic wave device; and

[0013] A second electronic device is mounted on the wiring substrate and is positioned further away from the outer edge of the wiring substrate than the first electronic device.

[0014] In the region of the structured portion where the first electronic device is connected to the outer edge of the wiring substrate, the area where the sealing portion engages with the exposed portion of the wiring substrate is greater than the area where the sealing portion engages with the first metal pattern. In the region of the structured portion where the second electronic device is connected to the outer edge of the wiring substrate, the area where the sealing portion engages with the exposed portion of the wiring substrate is smaller than the area where the sealing portion engages with the first metal pattern.

[0015] In one embodiment of this disclosure, the module including the elastic wave device further includes a plurality of electrode pads electrically connected to the elastic wave device, at least one of the electrode pads being at a ground potential, and the ground potential electrode pad being electrically connected to the first metal pattern.

[0016] In one embodiment of this disclosure, the module comprising the elastic wave device further includes:

[0017] A wiring pattern, closer to the center of the wiring substrate than the first metal pattern, and adjacent to the first metal pattern and formed on the wiring substrate, allows signal flow; and

[0018] The second metal pattern is closer to the center of the wiring substrate than the wiring pattern, and is adjacent to the wiring pattern and formed on the wiring substrate, and has a structured portion, and serves as a ground potential.

[0019] In one embodiment of this disclosure, the structured portion of the first metal pattern is a concave-convex shape.

[0020] In one embodiment of this disclosure, the structured portion of the first metal pattern is serrated.

[0021] In one embodiment of this disclosure, the sealing portion is formed of synthetic resin.

[0022] In one embodiment of this disclosure, the elastic wave device is a filter using an elastic surface wave resonator.

[0023] In one embodiment of this disclosure, the elastic wave device is a filter using a thin-film bulk acoustic resonator.

[0024] In one embodiment of this disclosure, the module including the elastic wave device further includes a switch mounted on the wiring substrate and a power amplifier mounted on the wiring substrate. The elastic wave device is a time-division duplex filter that can switch between transmitting and receiving signals via the switch and transmit a signal amplified by the power amplifier.

[0025] The beneficial effects of the present invention are as follows: According to this disclosure, a module containing an elastic wave device with excellent adhesion between the sealing part and the wiring substrate can be provided. Attached Figure Description

[0026] Figure 1 This is a cross-sectional view of a module including an elastic wave device according to the first embodiment.

[0027] Figure 2 This is an equivalent circuit diagram of the module including the elastic wave device in the first embodiment.

[0028] Figure 3This is a plan view of the main part of the module containing the elastic wave device in the first embodiment.

[0029] Figure 4 This is a plan view of the first layer of the wiring substrate of the module containing the elastic wave device in the first embodiment.

[0030] Figure 5 This is a plan view of the second layer of the wiring substrate of the module containing the elastic wave device in the first embodiment.

[0031] Figure 6 This is a plan view of the third layer of the wiring substrate of the module containing the elastic wave device in the first embodiment.

[0032] Figure 7 This is a plan view of the fourth layer of the wiring substrate of the module containing the elastic wave device in the first embodiment.

[0033] Figure 8 This is the first example of an elastic wave element installed in the module containing the elastic wave device in the first embodiment.

[0034] Figure 9 This is a second example of an elastic wave element installed in the module containing the elastic wave device in the first embodiment. Detailed Implementation

[0035] The specific embodiments of the present invention will be described below with reference to the accompanying drawings. Identical or corresponding parts in each drawing are labeled with the same reference numerals. Repeated descriptions of the same or corresponding parts will be simplified or omitted.

[0036] (First Embodiment)

[0037] Figure 1 This is a cross-sectional view of a module including an elastic wave device according to the first embodiment.

[0038] like Figure 1 As shown, the electronic component packaging module 1 includes a wiring substrate 11, a first metal pattern 12, a plurality of second metal patterns 13, a plurality of electrode pads 14, a plurality of wiring patterns 15, a plurality of bumps 16, an elastic wave device 17, a switch 18, a power amplifier 19, a plurality of electronic devices 20, and a sealing portion 21.

[0039] For example, the wiring substrate 11 is a multilayer substrate formed of multiple layers of resin. For example, the wiring substrate 11 is a low-temperature co-fired ceramic (LTCC) multilayer substrate containing multiple dielectric layers. The wiring substrate 11 has multiple external connection terminals 131.

[0040] The first metal pattern 12 is formed on the outer edge portion of the wiring substrate 11. For example, the first metal pattern 12 is formed of copper or an alloy containing copper. For example, the first metal pattern 12 has a thickness of 10 μm to 20 μm.

[0041] Each of the second metal patterns 13 is formed on the wiring substrate 11 closer to the center than the first metal pattern 12. For example, each of the second metal patterns 13 is formed of copper or an alloy containing copper. For example, each of the second metal patterns 13 has a thickness of 10 μm to 20 μm.

[0042] The electrode pads 14 of the first group are each formed on the wiring substrate 11 and overlap with the first metal pattern 12. Each of the electrode pads 14 of the first group is electrically connected to the first metal pattern 12. For example, each of the electrode pads 14 of the first group is formed of copper or a copper-containing alloy. For example, each of the electrode pads 14 of the first group has a thickness of 10 μm to 20 μm. Each of the electrode pads 14 of the first group serves as a ground potential.

[0043] The second set of electrode pads 14 are each formed on the wiring substrate 11 and overlap with the second metal pattern 13. The second set of electrode pads 14 are electrically connected to the second metal pattern 13. For example, each of the second set of electrode pads 14 is formed of copper or a copper-containing alloy. For example, each of the second set of electrode pads 14 has a thickness of 10 μm to 20 μm. Each of the second set of electrode pads 14 serves as a ground potential.

[0044] The electrode pads 14 of the third group are each formed on the wiring substrate 11 and do not overlap with the first metal pattern 12 and the second metal pattern 13. For example, the electrode pads 14 of the third group are each formed of copper or an alloy containing copper. For example, the electrode pads 14 of the third group each have a thickness of 10 μm to 20 μm.

[0045] The plurality of wiring patterns 15 are each disposed inside the module 1 containing the elastic wave device, thereby enabling the flow of power signals. Specifically, each wiring pattern 15 is formed between the first metal pattern 12 and the second metal pattern 13 on the wiring substrate 11 (see reference). Figure 4 For example, each of the wiring patterns 15 is formed of a suitable metal or alloy such as silver, aluminum, copper, titanium, or palladium. For example, each of the wiring patterns 15 is formed of a stacked metal film consisting of multiple metal layers. For example, the thickness of the wiring pattern 15 is, for example, 1500 nm to 4500 nm.

[0046] Each of the plurality of bumps 16 is electrically connected to any one of the plurality of electrode pads 14. For example, the bump 16 is made of gold. For example, the height of the bump 16 is 10 μm to 50 μm.

[0047] For example, the elastic wave device 17 is a time division duplex (TDD) filter with the same frequency band for transmitting and receiving signals. The elastic wave device 17 is mounted on the electrode pads 14 of the main surface of the wiring substrate 11 via the bumps 16 using flip-chip bonding technology. Although not shown in the figure, the elastic wave device 17 includes a wiring substrate, a plurality of bumps, at least one elastic wave device chip, and a sealing portion.

[0048] For example, the wiring substrate of the elastic wave device 17 is the same as the wiring substrate 11 of the module 1 containing the elastic wave device.

[0049] The bump is electrically connected to the wiring substrate. For example, the bump is made of gold. For example, the height of the bump is 10 μm to 50 μm.

[0050] For example, the elastic wave device chip has a chip substrate, wiring pattern, and multiple elastic wave elements.

[0051] For example, the chip substrate is formed of lithium tantalate or lithium niobate. The main surface of the chip substrate is electrically connected to the wiring substrate by means of the bumps.

[0052] The wiring pattern of the elastic wave device chip is formed on the main surface of the chip substrate. For example, the wiring pattern of the elastic wave device chip is formed of a suitable metal or alloy such as silver, aluminum, copper, titanium, or palladium. For example, the thickness of the wiring pattern of the elastic wave device chip is, for example, 1500 nm to 4500 nm.

[0053] The elastic wave element is formed on the main surface of the chip substrate. The elastic wave element is electrically connected to the wiring pattern of the elastic wave device chip. For example, the elastic wave element allows electrical signals of a desired frequency band to pass through. For example, the elastic wave element functions as a trapezoidal filter composed of multiple series resonators and multiple parallel resonators.

[0054] The switch 18 is mounted on the main surface of the wiring substrate 11. The switch 18 is electrically connected to the wiring pattern 15 via a bonding wire W1. The switch 18 allows the module 1 containing the elastic wave device to switch between transmitting and receiving signals.

[0055] The power amplifier 19 is mounted on the main surface of the wiring substrate 11. The power amplifier 19 is electrically connected to the wiring pattern 15 via a bonding wire W2. The power amplifier 19 amplifies the transmitted signal of the module 1 containing the elastic wave device.

[0056] For example, the electronic device 20 is an inductor. For example, the electronic device 20 is a capacitor. The electronic device 20 is mounted on the main surface of the wiring substrate 11 via the bumps 16 using flip-chip bonding technology. The electronic device 20 is mounted for impedance matching.

[0057] The sealing portion 21 covers the elastic wave device 17, the switch 18, the power amplifier 19, and the electronic device 20. The sealing portion 21 hermetically seals the wiring substrate 11 together with the elastic wave device 17, the switch 18, the power amplifier 19, and the electronic device 20. For example, the sealing portion 21 is formed of an insulator such as synthetic resin. For example, the sealing portion 21 is formed of metal. For example, the sealing portion 21 is formed of an insulating layer and a metal layer.

[0058] When the sealing portion 21 is formed of a synthetic resin, the synthetic resin may be epoxy resin, polyimide, etc. Preferably, the sealing portion 21 is formed of epoxy resin using a low-temperature curing process.

[0059] Next, use Figure 2 The operating principle of module 1, which includes the elastic wave device, is explained.

[0060] Figure 2 This is an equivalent circuit diagram of module 1, which includes an elastic wave device, in the first embodiment.

[0061] like Figure 2 As shown, the module 1 containing the elastic wave device includes a transmitting terminal Term_T, a receiving terminal Term_R, and an antenna terminal Term_ANT.

[0062] When the switch 18 is in the first state, the transmission signal path of the module 1 containing the elastic wave device is activated. At this time, the transmission signal passes through the transmission terminal Term_T and then through the power amplifier 19. The transmission signal is amplified. Next, the transmission signal passes through the switch 18. Then, the transmission signal passes through the elastic wave device 17. Finally, the transmission signal passes through the antenna terminal Term_ANT.

[0063] When the switch 18 is in the second state, the path for receiving signals of the module 1 containing the elastic wave device is activated. At this time, the received signal passes through the antenna terminal Term_ANT and then through the elastic wave device 17. Next, the received signal passes through the switch 18. Then, the received signal passes through the receiving terminal Term_R.

[0064] Next, use Figure 3This describes the main parts of module 1, which includes the elastic wave device.

[0065] Figure 3 This is a plan view of the main part of module 1, which includes the elastic wave device, in the first embodiment.

[0066] like Figure 3 As shown, the first metal pattern 12 and the second metal pattern 13 have concave-convex or serrated portions. Although not shown in the figure, the sealing portion 21 engages with the first metal pattern 12, the second metal pattern 13, and the exposed portion of the wiring substrate 11.

[0067] exist Figure 3 In this configuration, the first electronic device 20a is disposed on the lower right side of the wiring substrate 11. The second electronic device 20b is disposed on the upper right side of the wiring substrate 11. The second electronic device 20b is disposed further away from the right edge of the wiring substrate 11 than the first electronic device 20a.

[0068] In region A where the first electronic device 20a is adjacent to the right edge of the wiring substrate 11, the area where the sealing part 21 is connected to the exposed part of the wiring substrate 11 is larger than the area where the sealing part 21 is joined to the first metal pattern 12.

[0069] In the region B adjacent to the right edge of the wiring substrate 11, the area where the sealing part 21 connects with the exposed part of the wiring substrate 11 is smaller than the area where the sealing part 21 is joined with the first metal pattern 12.

[0070] The wiring pattern 15 is appropriately sandwiched within the metal pattern.

[0071] For example, in region C, the wiring pattern 15 is sandwiched between the first metal pattern 12 and the second metal pattern 13. Specifically, the wiring pattern 15 is closer to the center of the wiring substrate 11 than the first metal pattern 12 and is adjacent to the first metal pattern 12. The second metal pattern 13 is closer to the center of the wiring substrate 11 than the wiring pattern 15 and is adjacent to the wiring pattern 15.

[0072] For example, in region D, the wiring pattern 15 is sandwiched within the first metal pattern 12. Specifically, the wiring pattern 15 is suitably disposed within a recess of the first metal pattern 12.

[0073] For example, in region E, the wiring pattern 15 is sandwiched within the same second metal pattern 13. Specifically, the wiring pattern 15 is suitably disposed within a recess of the second metal pattern 13.

[0074] For example, in region F, the wiring pattern 15 is sandwiched between different second metal patterns 13. Specifically, one of the second metal patterns 13 is adjacent to one side of the wiring pattern 15, and the other of the second metal patterns 13 is adjacent to the other side of the wiring pattern 15.

[0075] Next, using Figures 4 to 7 The wiring substrate 11 is described.

[0076] Figure 4 This is a plan view of the first layer of the wiring substrate of the module containing the elastic wave device in the first embodiment. Figure 5 This is a plan view of the second layer of the wiring substrate of the module containing the elastic wave device in the first embodiment. Figure 6 This is a plan view of the third layer 143 of the wiring substrate of the module containing the elastic wave device in the first embodiment. Figure 7 This is a plan view of the fourth layer of the wiring substrate of the module containing the elastic wave device in the first embodiment.

[0077] Figure 4 The first layer 141 is a layer having a surface forming the main surface of the wiring substrate 11. For example... Figure 4 As shown, the first layer 141 has a plurality of first layer through-holes 141a. In the first layer 141, the first metal pattern 12 and the second metal pattern 13 are not electrically connected.

[0078] Figure 5 The second layer 142 is connected to the back side of the first layer 141. For example... Figure 5 As shown, the second layer 142 has a second layer metal pattern 142a, a plurality of second layer wiring patterns 142b, and a plurality of second layer through holes 142c.

[0079] Figure 6 The third layer 143 is connected to the back side of the second layer 142. For example... Figure 6 As shown, the third layer 143 has a third layer metal pattern 143a, a plurality of third layer wiring patterns 143b, and a plurality of third layer through holes 143c.

[0080] Figure 7 The fourth layer 144 is connected to the back side of the third layer 143. The fourth layer 144 forms the opposite side of the main surface of the wiring substrate 11. For example... Figure 7 As shown, the fourth layer 144 has a fourth layer metal pattern 144a and a plurality of external connection terminals 131.

[0081] By stacking the first layer 141 to the fourth layer 144, the desired electrical connection can be ensured. For example, the first metal pattern 12 and the second metal pattern 13 are electrically connected to the second layer metal pattern 142a via a via at ground potential in the first layer 141. Therefore, the first metal pattern 12 and the second metal pattern 13 become ground potential.

[0082] Next, use Figure 8 This is the first example illustrating an elastic wave element.

[0083] Figure 8 This is the first example of an elastic wave element installed in the module containing the elastic wave device in the first embodiment.

[0084] Figure 8 The example is an elastic surface wave resonator where the elastic wave element is an elastic wave element. For example... Figure 8 As shown, an IDT (Interdigital Transducer) 22a and a pair of reflectors 22b are formed on the main surface of the chip substrate. One of the reflectors 22b is adjacent to one side of the IDT 22a. The other reflector 22b is adjacent to the other side of the IDT 22a. The IDT 22a and the reflectors 22b can excite elastic surface waves.

[0085] For example, the IDT 22a and the reflector 22b are formed of an alloy of aluminum and copper. For example, the IDT 22a and the reflector 22b are formed of a suitable metal such as titanium, palladium, or silver, or an alloy thereof. For example, the IDT 22a and the reflector 22b are formed of a stacked metal film consisting of multiple metal layers. For example, the thickness of the IDT 22a and the reflector 22b is, for example, 150 nm to 400 nm.

[0086] The IDT 22a has a pair of comb-shaped electrodes 22c. The comb-shaped electrodes 22c are opposite to each other. Each comb-shaped electrode 22c has a plurality of electrode fingers 22d and a bus bar 22e. The electrode fingers 22d extend longitudinally. The bus bar 22e connects the electrode fingers 22d.

[0087] Next, use Figure 9 This is the second example illustrating an elastic wave element.

[0088] Figure 9 This is a second example of an elastic wave element installed in the module containing the elastic wave device in the first embodiment.

[0089] exist Figure 9 In the example, the elastic wave element is exemplified by a thin-film bulk acoustic resonator. Figure 9In the chip substrate 60, the semiconductor substrate is silicon or other semiconductor substrate, or an insulating substrate such as sapphire, alumina, spinel or glass.

[0090] A piezoelectric film 62 is disposed on the chip substrate 60. For example, the piezoelectric film 62 is formed of aluminum nitride.

[0091] The lower electrode 64 and the upper electrode 66 sandwich the piezoelectric film 62 therein. For example, the lower electrode 64 and the upper electrode 66 are formed of a metal such as ruthenium.

[0092] A gap 68 is formed between the lower electrode 64 and the chip substrate 60.

[0093] In the thin-film bulk acoustic resonator, the lower electrode 64 and the upper electrode 66 excite elastic waves in the piezoelectric film 62 in a thickness longitudinal vibration mode.

[0094] According to the first embodiment, the first metal pattern 12 has a structured portion, such as a raised or recessed shape, preferably a serrated portion. The sealing portion 21 connects the exposed portion of the wiring substrate 11 to the first metal pattern 12. The boundary of the area where the first metal pattern 12 is connected to the sealing portion 21 becomes longer, and the sealing portion 21 penetrates into the recessed portion of the first metal pattern 12 in the raised or recessed shape, preferably into the valley of the first metal pattern 12 in the serrated portion. Therefore, an anchoring effect can be obtained, and the adhesion between the sealing portion 21 and the wiring substrate 11 can be improved.

[0095] Furthermore, the first metal pattern 12 is formed approximately 15 μm inward from the end of the wiring substrate 11. Therefore, the adhesion between the sealing portion 21 and the end of the wiring substrate 11 can be improved.

[0096] Furthermore, in region A, where the first electronic device 20a is adjacent to the edge of the wiring substrate 11, the area where the sealing portion 21 connects to the exposed portion of the wiring substrate 11 is larger than the area where the sealing portion 21 is bonded to the first metal pattern 12. In region B, where the second electronic device 20b is adjacent to the edge of the wiring substrate 11, the area where the sealing portion 21 connects to the exposed portion of the wiring substrate 11 is smaller than the area where the sealing portion 21 is bonded to the first metal pattern 12. Therefore, near the edge of the first electronic device 20a close to the edge of the wiring substrate 11, the sealing portion 21 adheres to the exposed portion of the wiring substrate 11, thus reliably improving the adhesion between the sealing portion 21 and the wiring substrate 11. Furthermore, in the region near the second electronic device 20b at the edge of the wiring substrate 11, the sealing portion 21 not only adheres to the exposed portion of the wiring substrate 11, but also engages with the sealing portion 21 through a region of the first metal pattern 12 of a certain area, thereby reliably improving the adhesion between the sealing portion 21 and the wiring substrate 11.

[0097] Furthermore, the second metal pattern 13 has structured portions, such as raised or recessed portions, preferably serrated portions. The sealing portion 21 connects the exposed portion of the wiring substrate 11 to the second metal pattern 13. The boundary of the area where the second metal pattern 13 connects to the sealing portion 21 becomes longer, and the sealing portion 21 penetrates into the recessed portion of the second metal pattern 13 in the raised or recessed portion, preferably into the valley of the second metal pattern 13 in the serrated portion. Therefore, an anchoring effect can be obtained, and the adhesion between the sealing portion 21 and the wiring substrate 11 can be improved.

[0098] Furthermore, the first metal pattern 12 and the second metal pattern 13 enhance the thermal conductivity between the wiring substrate 11 and the sealing portion 21. Therefore, the heat dissipation of the module 1 containing the elastic wave device is improved.

[0099] Furthermore, the first metal pattern 12 is electrically connected to the electrode pad 14 at the ground potential. Therefore, grounding is enhanced. Also, the first metal pattern 12 can be electrically connected to at least one electrode pad 14 at the ground potential.

[0100] Furthermore, the wiring pattern 15 is closer to the center of the wiring substrate 11 than the first metal pattern 12, and is adjacent to the first metal pattern 12. The second metal pattern 13 is closer to the center of the wiring substrate 11 than the wiring pattern 15, and is adjacent to the wiring pattern 15. Therefore, the coupling reduction between the wiring pattern 15 and ground can be suppressed. Therefore, the degradation of the characteristics of the module 1 containing the elastic wave device can be suppressed.

[0101] When the first metal pattern 12 or the second metal pattern 13 is close to the wiring pattern 15, parasitic capacitance will be generated between the metal wiring and the wiring pattern 15. For example, when the distance between the metal pattern and the wiring pattern 15 is fixed, a certain amount of parasitic capacitance will be generated. In this case, if the metal pattern has a structured portion, such as an uneven shape, the distance between the metal pattern and the wiring pattern 15 can be adjusted. Therefore, the heat dissipation effect can be improved as much as possible by means of the metal pattern, and the problem of parasitic capacitance between the metal pattern and the wiring pattern 15 can be eliminated.

[0102] Furthermore, the sealing portion 21 is formed of synthetic resin. Therefore, it can particularly improve the adhesion of the sealing portion 21 to the exposed portion of the wiring substrate 11.

[0103] Furthermore, the elastic wave device 17 is a filter using an elastic surface wave resonator. Therefore, a module 1 containing an elastic wave device can be obtained, which allows electrical signals of the desired frequency band to pass through.

[0104] Furthermore, the elastic wave device 17 is a filter using a thin-film acoustic resonator. Therefore, a module 1 containing an elastic wave device can be obtained, which allows electrical signals of the desired frequency band to pass through.

[0105] Furthermore, the elastic wave device 17 is a time-division duplex filter. In the elastic wave device 17, the transmit signal and the receive signal can be switched by the switch 18. In the elastic wave device 17, the signal amplified by the power amplifier 19 can be transmitted. In the module 1 containing the elastic wave device, not only can the transmit signal and the receive signal be switched, but the transmit signal can also be output appropriately.

[0106] Alternatively, the elastic wave device 17 may be a duplexer with two elastic wave device chips, a bandpass filter with one elastic wave device chip, or a quadplexer with four elastic wave device chips.

[0107] Furthermore, the elastic wave device 17 can also have the elastic wave device chip directly mounted on the wiring substrate 11.

[0108] While at least one embodiment has been described above, it should be understood that various changes, modifications, or improvements will readily occur to those skilled in the art. These changes, modifications, or improvements are also part of this disclosure and fall within the scope of this invention.

[0109] It should be understood that the embodiments of the methods or apparatus described herein are not limited to the architecture and arrangement of the constituent components described above or illustrated in the accompanying drawings. The methods and apparatus can be installed or performed in other embodiments.

[0110] The embodiments described are for illustrative purposes only and are not intended to be limiting.

[0111] The descriptions and terms used in this disclosure are for illustrative purposes only and are not intended to be limiting. The use of "including," "possessing," "having," "comprise," and variations thereof here means to include the items listed below, their equivalents, and additional items.

[0112] The word “or”, or any word used in a description, may be interpreted as one, more than one, or all of the descriptive words.

[0113] The references to front, back, left, right, top, bottom, upper, lower, and horizontal and vertical are for ease of description and are not intended to limit the position and spatial configuration of any component in this invention. Therefore, the above description and drawings are merely exemplary.

Claims

1. A module comprising an elastic wave device, comprising: Wiring substrate; An elastic wave device is mounted on the wiring substrate; A first metallic pattern is formed on the outer edge portion of the wiring substrate; and The sealing part provides an airtight seal for the elastic wave device; Its features are: The first metal pattern has a structured portion, and the sealing portion is engaged with the exposed portion of the wiring substrate and the first metal pattern; The module containing the elastic wave device further includes: A first electronic device, mounted on the wiring substrate and different from the elastic wave device; and A second electronic device is mounted on the wiring substrate and is positioned further away from the outer edge of the wiring substrate than the first electronic device. In the region of the structured portion where the first electronic device is connected to the outer edge of the wiring substrate, the area where the sealing portion engages with the exposed portion of the wiring substrate is greater than the area where the sealing portion engages with the first metal pattern. In the region of the structured portion where the second electronic device is connected to the outer edge of the wiring substrate, the area where the sealing portion engages with the exposed portion of the wiring substrate is smaller than the area where the sealing portion engages with the first metal pattern.

2. The module comprising an elastic wave device according to claim 1, characterized in that: The module containing the elastic wave device further includes a plurality of electrode pads electrically connected to the elastic wave device, at least one of the electrode pads being at ground potential, and the electrode pad at ground potential being electrically connected to the first metal pattern.

3. The module comprising an elastic wave device according to claim 2, characterized in that: The module containing the elastic wave device further includes: The wiring pattern is closer to the center of the wiring substrate than the first metal pattern, and is adjacent to the first metal pattern and formed on the wiring substrate, and is capable of allowing signal flow. and The second metal pattern is closer to the center of the wiring substrate than the wiring pattern, and is adjacent to the wiring pattern and formed on the wiring substrate, and has a structured portion, and serves as a ground potential.

4. The module comprising an elastic wave device according to claim 1, characterized in that: The structured portion of the first metal pattern is a concave-convex shape.

5. The module comprising an elastic wave device according to claim 1, characterized in that: The structured portion of the first metal pattern is serrated.

6. The module comprising an elastic wave device according to claim 1, characterized in that: The sealing part is formed of synthetic resin.

7. The module comprising an elastic wave device according to claim 1, characterized in that: The elastic wave device is a filter that uses an elastic surface wave resonator.

8. The module comprising an elastic wave device according to claim 1, characterized in that: The elastic wave device is a filter that uses a thin-film bulk acoustic resonator.

9. The module comprising an elastic wave device according to claim 1, characterized in that: The module containing the elastic wave device also includes a switch mounted on the wiring substrate and a power amplifier mounted on the wiring substrate. The elastic wave device is a time-division duplex filter that can switch between transmitting and receiving signals by means of the switch and transmit signals amplified by the power amplifier.

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