Filtering device and high-frequency front-end circuit with the filtering device

Abstract

The filter device (100) includes a main body (110), a ground terminal (GND), and multiple resonators (RC1 to RC4). The multiple resonators are arranged in the main body and are electromagnetically coupled to each other. The multiple resonators include: a resonator (RC1) connected to the input terminal (T1); a resonator (RC2) connected to the output terminal (T2); and resonators (RC3 and RC4). Resonator (RC2) is arranged adjacent to resonator (RC1) in a first direction. Resonator (RC3) is arranged adjacent to resonator (RC1) in a second direction orthogonal to the first direction. Resonator (RC4) is arranged adjacent to resonator (RC3) in the first direction. A portion of the path connecting to the ground terminal (GND) is shared in resonators (RC3) and (RC4).

Description

Technical Field

[0001] The present invention relates to a filtering device and a high-frequency front-end circuit having the filtering device, and more particularly to a technique for improving the characteristics of the filtering device. Background Technology

[0002] Multi-segment filtering devices with multiple LC resonators are known. For example, Japanese Patent Application Publication No. 2019-79865 (Patent Document 1) discloses a bandpass filter in which four LC resonators are arranged in one direction within a cuboid body. Japanese Patent Application Publication No. 2019-79865 (Patent Document 1) also discloses a structure in which the wiring of the grounding vias of the two middle resonators is shared.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2019-79865

[0004] The aforementioned filtering devices are widely used in communication devices such as smartphones, mobile phones, or mobile phone base stations. In such communication devices, it is required to improve filtering characteristics by further reducing insertion loss. Summary of the Invention

[0005] This invention was made to solve such a problem, and its purpose is to improve the loss characteristics of a filter device that includes multiple LC resonators.

[0006] The filtering device of the present invention includes a main body, a ground terminal, and a plurality of resonators. The plurality of resonators are disposed in the main body and are electromagnetically coupled to each other. The plurality of resonators includes: a first resonator connected to the input terminal; a second resonator connected to the output terminal; and a third resonator and a fourth resonator. The second resonator is disposed adjacent to the first resonator in a first direction. The third resonator is disposed adjacent to the first resonator in a second direction orthogonal to the first direction. The fourth resonator is disposed adjacent to the third resonator in the first direction. In the third and fourth resonators, a portion of the path connected to the ground terminal is shared.

[0007] The filtering device of the present invention includes four resonators. A resonator connected to the input terminal (first resonator) and a resonator connected to the output terminal (second resonator) are arranged adjacent to each other in a first direction. Two resonators (third resonator and fourth resonator) are arranged in a second direction relative to these resonators. The third and fourth resonators are arranged adjacent to each other in the first direction, and a portion of the path connecting to the ground terminal is shared. By adopting the above-described configuration of the four resonators, the spacing between adjacent resonators can be ensured, thereby improving the Q value of the filtering device. Furthermore, the sharing of a portion of the middle section of the resonators (third and fourth resonators) strengthens the magnetic coupling between these resonators, thus further improving the Q value of the filtering device. Therefore, the loss characteristics of the filtering device can be improved in the filtering device of the present invention. Attached Figure Description

[0008] Figure 1 This is a block diagram of a communication device having a high-frequency front-end circuit with a filtering device according to embodiment 1.

[0009] Figure 2 This is the equivalent circuit diagram of the filtering device in Implementation Method 1.

[0010] Figure 3 It means Figure 2 An exploded perspective view of an example of the stacked structure of a filter device.

[0011] Figure 4 yes Figure 3 A top view of the filter device.

[0012] Figure 5 This is a top view of the filter device in the comparative example.

[0013] Figure 6 This is a diagram used to illustrate the configuration of the resonator in the filtering device of Embodiment 1 and the comparative example.

[0014] Figure 7 This is a diagram used to explain the current direction caused by the differences in each mode in the filter devices of Embodiment 1 and the comparative example.

[0015] Figure 8 This is a diagram used to illustrate the passing characteristics of the filtering device in Embodiment 1 and the comparative example.

[0016] Figure 9 yes Figure 8 A magnified view of the insertion loss curve in the image.

[0017] Figure 10 This is a top view of the filter device in Modified Example 1.

[0018] Figure 11 yes Figure 10 The equivalent circuit diagram of the filter device.

[0019] Figure 12 This is a top view of the filter device in Modified Example 2.

[0020] Figure 13 This is a top view of the filter device in variation example 3.

[0021] Figure 14 This is an exploded perspective view showing an example of the stacked structure of the filter device in Modified Example 4.

[0022] Figure 15 This is an exploded perspective view showing an example of the stacked structure of the filter device in Modified Example 5.

[0023] Figure 16 This is an exploded perspective view showing an example of the stacked structure of the filter device in Modified Example 6.

[0024] Figure 17 This is an exploded perspective view showing an example of the stacked structure of the filter device in Modified Example 7.

[0025] Figure 18 This is an exploded perspective view showing an example of the stacked structure of the filter device in Modified Example 8.

[0026] Figure 19 This is an exploded perspective view showing an example of the stacked structure of the filter device in Modified Example 9.

[0027] Figure 20 This is the equivalent circuit diagram of the filtering device in Implementation Method 2.

[0028] Figure 21 It means Figure 20 An exploded perspective view of an example of the stacked structure of a filter device.

[0029] Figure 22 This is an exploded perspective view showing an example of the stacked structure of the filter device in Modified Example 10.

[0030] Figure 23 This is an exploded perspective view showing an example of the stacked structure of the filter device in Modified Example 11.

[0031] Figure 24 This is an exploded perspective view showing an example of the stacked structure of the filter device in Embodiment 3.

[0032] Figure 25 This is an exploded perspective view showing an example of the stacked structure of the filter device in Embodiment 4.

[0033] Figure 26 yes Figure 25 A top view of the filter device.

[0034] Figure 27 This is an exploded perspective view showing an example of the stacked structure of the filter device in Modified Example 12.

[0035] Figure 28 yes Figure 27 A top view of the filter device.

[0036] Figure 29 This is a top view of the filter device in Modified Example 13. Detailed Implementation

[0037] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, the same or equivalent parts in the drawings will be labeled with the same reference numerals without repeating their descriptions.

[0038] [Implementation Method 1]

[0039] (Basic structure of a communication device)

[0040] Figure 1 This is a block diagram of a communication device 10 having a high-frequency front-end circuit 20 with the filtering device of embodiment 1. The communication device 10 is, for example, a mobile terminal such as a smartphone or a mobile phone base station.

[0041] Reference Figure 1 The communication device 10 includes an antenna 12, a high-frequency front-end circuit 20, a mixer 30, a local oscillator 32, a D / A converter (DAC) 40, and an RF circuit 50. Furthermore, the high-frequency front-end circuit 20 includes bandpass filters 22 and 28, an amplifier 24, and an attenuator 26. Additionally, in... Figure 1 In this description, the high-frequency front-end circuit 20 includes a transmitting circuit that transmits high-frequency signals from the antenna 12, but the high-frequency front-end circuit 20 may also include a receiving circuit that receives high-frequency signals via the antenna 12.

[0042] The communication device 10 up-converts the transmit signal from the RF circuit 50 to a high-frequency signal and transmits it from the antenna 12. The transmit signal output from the RF circuit 50, i.e., the modulated digital signal, is converted into an analog signal by the D / A converter 40. The mixer 30 mixes the transmit signal, converted from digital to analog by the D / A converter 40, with the oscillation signal from the local oscillator 32 to up-convert it into a high-frequency signal. The bandpass filter 28 removes unwanted waves generated during up-conversion, extracting only the transmit signal of the desired frequency band. The attenuator 26 adjusts the strength of the transmit signal. The amplifier 24 electrically amplifies the transmit signal that has passed through the attenuator 26 to a specified level. The bandpass filter 22 removes unwanted waves generated during amplification and allows only the signal components of the frequency band determined by the communication standard to pass through. The transmit signal that has passed through the bandpass filter 22 is transmitted from the antenna 12.

[0043] The bandpass filters 22 and 28 in the aforementioned communication device 10 can be filtering devices corresponding to the present invention.

[0044] (Structure of the filter device)

[0045] Next use Figures 2-4 The detailed structure of the filter device 100 in Embodiment 1 will be described.

[0046] Figure 2 This is the equivalent circuit diagram of filter device 100. (Refer to...) Figure 2 The filter device 100 includes an input terminal T1, an output terminal T2, and resonators RC1 to RC4. Resonators RC1 to RC4 are LC parallel resonators, each containing an inductor and a capacitor. Resonator RC1 is connected to the input terminal T1, and resonator RC2 is connected to the output terminal T2. Resonators RC3 and RC4 are connected between resonators RC1 and RC2.

[0047] The resonator RC1 includes an inductor L1 and a capacitor C1 connected in parallel. One connection node N1A of the inductor L1 and capacitor C1 is connected to the input terminal T1. The other connection node N1B of the inductor L1 and capacitor C1 is connected to the ground terminal GND.

[0048] The resonator RC2 includes an inductor L2 and a capacitor C2 connected in parallel. One connection node N2A of the inductor L2 and capacitor C2 is connected to the output terminal T2. The other connection node N1B of the inductor L2 and capacitor C2 is connected to the ground terminal GND.

[0049] The resonator RC3 includes inductors L3 and L34 connected in series, and capacitor C3 connected in parallel with inductors L3 and L34. The connection node N3A of inductor L3 and capacitor C3 is connected to the connection node N1A of resonator RC1 (i.e., input terminal T1) via capacitor C13. The connection node N3B of inductor L34 and capacitor C3 is connected to the ground terminal GND.

[0050] Resonator RC4 includes inductors L4 and L34 connected in series, and capacitor C4 connected in parallel with inductors L4 and L34. The connection point N4A between inductor L4 and capacitor C4 is connected to the connection point N2A (i.e., output terminal T2) of resonator RC2 via capacitor C24. The connection point N4B between inductor L34 and capacitor C4 is connected to the ground terminal GND. That is, resonator RC4 and resonator RC3 share inductor L34.

[0051] Capacitor C12 is connected between connection node N1A and connection node N2A. Additionally, capacitor C34 is connected between connection node N3A and connection node N4A.

[0052] Each resonator is coupled to the others via electromagnetic field coupling. Thus, the filter device 100 has a structure with four resonators arranged between the input terminal T1 and the output terminal T2, mutually coupling their electromagnetic fields. The high-frequency signal input to the input terminal T1 is transmitted through the electromagnetic field coupling of resonators RC1 to RC4 and output from the output terminal T2. At this time, only the signal within the frequency band determined by the resonant frequency of each resonator is transmitted to the output terminal T2. That is, the filter device 100 functions as a bandpass filter that allows signals of the desired frequency band to pass through by adjusting the resonant frequencies of each resonator.

[0053] Figure 3 This is an exploded perspective view showing an example of the stacked structure of the filter device 100. Additionally, Figure 4 yes Figure 3 A top view of the dielectric layer LY2 in the filter device 100.

[0054] Reference Figure 3 and Figure 4 The filter device 100 includes a main body 110 formed by stacking multiple dielectric layers LY1 to LY6 along a predetermined direction to create a cuboid or approximately cuboid. In the main body 110, the stacking direction of the multiple dielectric layers LY1 to LY6 is defined as the stacking direction. Each dielectric layer of the main body 110 is formed, for example, from ceramics such as low-temperature co-fired ceramics (LTCC) or resin. Inside the main body 110, multiple electrodes disposed in each dielectric layer and multiple vias formed between the dielectric layers constitute an inductor and a capacitor for constructing an LC resonator. Furthermore, in this specification, "via" refers to a conductor extending in the stacking direction provided for connecting electrodes disposed in different dielectric layers to each other. Vias are formed, for example, from conductive paste, electroplating, and / or metal pins.

[0055] Furthermore, in the following description, the stacking direction of the main body 110 will be defined as the "Z-axis direction", the direction perpendicular to the Z-axis direction and along the long side of the main body 110 will be defined as the "X-axis direction" (first direction), and the direction along the short side of the main body 110 will be defined as the "Y-axis direction" (second direction). In addition, in the following, the positive direction of the Z-axis in each figure will sometimes be referred to as the upper side, and the negative direction as the lower side.

[0056] A directional mark DM for determining the orientation of the filter device 100 is disposed on the upper surface 111 (dielectric layer LY1) of the main body 110. External terminals for connecting the filter device 100 to external devices are disposed on the lower surface 112 (dielectric layer LY6) of the main body 110, namely input terminal T1, output terminal T2, and ground terminal GND. Input terminal T1, output terminal T2, and ground terminal GND are flat electrodes, which are LGA (Land Grid Array) terminals regularly arranged on the lower surface 112 of the main body 110.

[0057] picture Figure 2 As described, the filter device 100 has four LC parallel resonators RC1 to RC4. More specifically, resonator RC1 includes vias V10 and V11, capacitor electrode P1, and plate electrode PC1. Resonator RC2 includes vias V20 and V21, capacitor electrode P2, and plate electrode PC2. Resonator RC3 includes vias V30 and V31, capacitor electrode P3, and plate electrode PC34. Resonator RC4 includes vias V40 and V31, capacitor electrode P4, and plate electrode PC34. In resonators RC3 and RC4, vias V31 and plate electrode PC34 are shared.

[0058] The capacitor electrode P1 of the resonator RC1 is disposed on the dielectric layer LY4. Viewed from the normal direction (Z-axis direction) of the main body 110, a portion of the capacitor electrode P1 overlaps with the ground electrode PG disposed on the dielectric layer LY5. The capacitor electrode P1 and the ground electrode PG together form a... Figure 2 The capacitor C1. The capacitor electrode P1 is connected to the plate electrode PT1 disposed on the dielectric layer LY5 through the through hole VT11. The plate electrode PT1 is connected to the input terminal T1 through the through hole VT10.

[0059] The planar electrode PC1 of the resonator RC1 has a roughly U-shaped design. For example... Figure 4 As shown, the planar electrode PC1 is located in the dielectric layer LY2, with a U-shaped opening facing the positive X-axis. One end of the planar electrode PC1 is connected to the capacitor electrode P1 via via V10. The other end of the planar electrode PC1 is connected to the ground electrode PG of the dielectric layer LY5 via via V11. The ground electrode PG is connected to the ground terminal GND through multiple vias VG. The planar electrode PC1 and vias V10 and V11 constitute a... Figure 2 Inductor L1.

[0060] The capacitor electrode P2 of the resonator RC2 is disposed on the dielectric layer LY4. Viewed from the normal direction of the main body 110, a portion of the capacitor electrode P2 overlaps with the ground electrode PG disposed on the dielectric layer LY5. The capacitor electrode P2 and the ground electrode PG together form... Figure 2 The capacitor C2. Capacitor electrode P2 is connected to a planar electrode PT2 formed in the dielectric layer LY5 via a via VT21. Planar electrode PT2 is connected to the output terminal T2 via a via VT20.

[0061] The planar electrode PC2 of the resonator RC2, like the planar electrode PC1, has a roughly U-shaped design. For example... Figure 4 As shown, the planar electrode PC2 is configured in the dielectric layer LY2 with a U-shaped opening facing the negative X-axis direction. In other words, the planar electrodes PC1 and PC2 are arranged adjacent to each other in the X-axis direction in the dielectric layer LY2 with their openings facing each other. One end of the planar electrode PC2 is connected to the capacitor electrode P2 via the via V20. The other end of the planar electrode PC2 is connected to the ground electrode PG of the dielectric layer LY5 via the via V21. The planar electrode PC2 and the vias V20 and V21 constitute a... Figure 2 The inductor L2.

[0062] The capacitor electrode P3 of the resonator RC3 is disposed on the dielectric layer LY4. Viewed from the normal direction of the main body 110, a portion of the capacitor electrode P3 overlaps with the ground electrode PG disposed on the dielectric layer LY5. The capacitor electrode P3 and the ground electrode PG together form a... Figure 2 The capacitor C3. The capacitor electrode P2 is connected to the plate electrode PC34 disposed on the dielectric layer LY2 through the through hole V30.

[0063] like Figure 4 As shown, the planar electrode PC34 has a generally T-shaped form. The planar electrode PC34 includes: a first portion PC341 configured as a strip electrode extending along the X-axis direction, and a second portion PC342 protruding from the center of the first portion PC341 in the X-axis direction toward the negative Y-axis direction. The first portion PC341 of the planar electrode PC34 is disposed separately from the planar electrodes PC1 and PC2 in the positive Y-axis direction. The second portion PC342 of the planar electrode PC34 protrudes from the first portion PC341 toward the space between the planar electrodes PC1 and PC2.

[0064] The via V30 is connected to the negative X-axis end (first end) of the first part PC341. The via V31 is connected to the negative Y-axis end of the second part PC342. The via V31 is connected to the ground electrode PG of the dielectric layer LY5. The portion of the first part PC341 from the connection point of the via V30 to the second part PC342 constitutes the... Figure 2 The inductor L3. Additionally, it is constructed via the second part PC342 and vias V31 and VG. Figure 2 The inductor L34.

[0065] The capacitor electrode P4 of the resonator RC4 is disposed on the dielectric layer LY4. Viewed from the normal direction of the main body 110, a portion of the capacitor electrode P4 overlaps with the ground electrode PG disposed on the dielectric layer LY5. The capacitor electrode P4 and the ground electrode PG together form a... Figure 2 The capacitor C4. Capacitor electrode P4 is connected via a via V40 to the positive X-axis end (second end) of the first portion PC341 of the plate electrode PC34. The portion of the first portion PC341 from the connection point of the via V40 to the second portion PC342 constitutes the... Figure 2 Inductor L4.

[0066] Capacitor electrodes P12, P13, P24, and P34 are provided in dielectric layer LY3. Viewed from the normal direction of the main body 110, capacitor electrode P12 partially overlaps with capacitor electrodes P1 and P2 of dielectric layer LY4. The capacitor electrodes P1, P2, and P12 constitute a... Figure 2 The capacitor C12. Viewed from the normal direction of the main body 110, capacitor electrode P13 partially overlaps with capacitor electrodes P1 and P3 of the dielectric layer LY4. The capacitor electrode P1, capacitor electrode P3, and capacitor electrode P13 constitute... Figure 2 Capacitor C13.

[0067] Viewed from the normal direction of the main body 110, capacitor electrode P24 partially overlaps with capacitor electrodes P2 and P4 of dielectric layer LY4. The capacitor electrode P2, capacitor electrode P4, and capacitor electrode P24 constitute... Figure 2 The capacitor C24. Viewed from the normal direction of the main body 110, capacitor electrode P34 partially overlaps with capacitor electrodes P3 and P4 of the dielectric layer LY4. The capacitor electrode P3, capacitor electrode P4, and capacitor electrode P34 constitute... Figure 2 The capacitor is C34.

[0068] The vias V11 to V31 on the ground side of each resonator are arranged along the X-axis. The shared via V31 in resonators RC3 and RC4 is positioned between the via V11 of resonator RC1 and the via V21 of resonator RC2. By adjusting the spacing between the vias, the strength of the magnetic coupling between the resonators can be adjusted.

[0069] In the planar electrode PC34, by adjusting the length of the first part PC341 (i.e., Figure 4 The width of LG1 and / or the first part of PC341 ( Figure 4 The inductance of inductor L3 and inductor L4 of resonator RC3 can be adjusted by adjusting the length LG2 of the second part PC342 of the plate electrode PC34.

[0070] Furthermore, in the following description, vias such as vias V10, V20, V30, and V40 that are connected to the ground terminal GND via a capacitor in each resonator will be referred to as "first vias". In addition, vias such as vias V11, V21, and V31 that are not connected to the ground terminal GND via a capacitor in each resonator will be referred to as "second vias".

[0071] The aforementioned multi-segment cascaded LC filter is widely used in communication devices such as smartphones, mobile phones, or mobile phone base stations. In such communication devices, for the purpose of improving communication quality and reducing power consumption, the filtering device is required to further reduce insertion loss.

[0072] In the filter device 100 of Embodiment 1, the configuration of the plurality of resonators included in the filter device was studied, and the insertion loss was improved by adjusting the strength of the magnetic coupling between the resonators. Hereinafter, the features of the filter device 100 of Embodiment 1 will be described in detail while comparing it with the structure of conventionally known filter devices.

[0073] Figure 5 This is a top view of the dielectric layer of the planar electrodes of each resonator arranged in the comparative example filter device 100X. In the filter device 100X, a structure is adopted in which four resonators RC1X to RC4X are arranged along the X-axis.

[0074] Reference Figure 5 The filter device 100X is located within the main body 110X. A resonator RC1X is positioned on the short side in the negative direction of the X-axis, and a resonator RC2X is positioned on the short side in the positive direction of the X-axis. Resonators RC3X and RC4X are positioned between resonators RC1X and RC2X.

[0075] The resonator RC1X includes a planar electrode PC1X and vias V10X and V11X. The planar electrode PC1X has a roughly U-shaped shape that is open in the positive Y-axis direction. In the planar electrode PC1X, via V10X, which corresponds to the first via, is connected to one end, and via V11X, which corresponds to the second via, is connected to the other end.

[0076] The resonator RC2X includes a planar electrode PC2X and vias V20X and V21X. The planar electrode PC2X, like the planar electrode PC1X, has a roughly U-shaped shape open in the positive Y-axis direction. In the planar electrode PC2X, via V20X, corresponding to the first via, is connected to one end, and via V21X, corresponding to the second via, is connected to the other end.

[0077] The resonator RC3X includes a planar electrode PC34X and vias V30X and V31X. Similarly, the resonator RC4X includes a planar electrode PC34X and vias V40X and V31X. That is, similar to the filter device 100 of Embodiment 1, the planar electrodes of the resonator RC3X and the resonator RC4X are integrally formed, and the via V31X on the ground side is shared.

[0078] The planar electrode PC34X has a generally Y-shaped form, comprising: a first portion PC341X with a U-shape open in the negative direction of the Y-axis, and a second portion PC342X protruding from the center of the first portion in the positive direction of the Y-axis. A V30X is connected to the end of the first portion PC341X on the resonator RC1X side, and a V40X is connected to the end of the first portion PC341X on the resonator RC2X side. A common via V31X is connected to the second portion PC342X.

[0079] Figure 6 This diagram illustrates the resonator configurations of the filter device 100 in Embodiment 1 and the filter device 100X in the comparative example. Figure 6 The left figure (a) shows a rough configuration of each resonator in the filter device 100, and the right figure (b) shows a rough configuration of each resonator in the filter device 100X of the comparative example.

[0080] like Figure 6As shown, in the filter device 100 of Embodiment 1, the input-side resonator RC1 and the output-side resonator RC2 are arranged adjacent to each other in the long side direction (X-axis direction) of the main body 110, and the middle resonators RC3 and RC4 are also arranged adjacent to each other in the X-axis direction. Furthermore, the group of resonators RC1 and RC2 (the first resonator group) and the group of resonators RC3 and RC4 (the second resonator group) are arranged adjacent to each other in the Y-axis direction. On the other hand, in the filter device 100X of the comparative example, the resonators RC1X, RC3X, RC4X, and RC2X are arranged in the positive X-axis direction of the main body 110X in that order.

[0081] In the comparative example filter device 100X, since the four resonators are arranged in a one-dimensional configuration, it is difficult to ensure the spacing of the conductor portions in adjacent resonators. In particular, each of the resonators in the middle section RC3X and RC4X is configured to be sandwiched between two resonators, so if the spacing with one resonator widens, the spacing with the other resonator narrows. Therefore, in the resonator configuration of the filter device 100X, it becomes a state where the Q value cannot be increased.

[0082] In contrast, in the filter device 100 of Embodiment 1, two resonators are arranged in the X-axis direction and two resonators are also arranged in the Y-axis direction. That is, four resonators are arranged in two dimensions in the filter device 100. Therefore, for example, by arranging the conductors of each resonator close to the outer periphery of the main body 110, the spacing between adjacent resonators is widened. Therefore, even when the overall area of ​​the dielectric layer is the same, the Q value can be increased, and the loss of the filter device can be reduced.

[0083] Furthermore, in the filter device 100 of Embodiment 1, compared to the plate electrode PC34X of the filter device 100X of the comparative example, the plate electrode PC34 of the resonators RC3 and RC4 in the middle section is a straight line. Generally, if there is a bend in the signal transmission path (i.e., the current path), the current tends to concentrate at that bend. Thus, the loss at the current concentration point increases. In the plate electrode PC34X of the comparative example, two bends occur in the paths from the vias V30X and V40X to the via V31X. In contrast, in the plate electrode PC34 of Embodiment 1, only one bend occurs in the paths from the vias V30 and V40 to the via V31X. Therefore, from this perspective, the filter device 100 can reduce losses compared to the filter device 100X of the comparative example.

[0084] Furthermore, the shape of the plate electrode PC34 in Embodiment 1 has the advantage that it is less likely to produce characteristic deviations compared to the plate electrode PC34X in the comparative example. Figure 7This is a diagram used to illustrate the current direction in each mode of the filter device in Embodiment 1 and the comparative example. Figure 7 In the text, the upper paragraph represents the comparative example, and the lower paragraph represents the implementation method 1.

[0085] Reference Figure 7 In cases where high-frequency signals are typically transmitted through two transmission paths, there exists a first mode (Even Mode) where current flows in the same direction in each transmission path and a second mode (Odd Mode) where current flows in opposite directions. For example, in the case of resonators RC3 and RC4 of the filter device 100 described above, in the first mode, current flows from via V30 to via V31 in resonator RC3, and current flows from via V40 to via V31 in resonator RC4. On the other hand, in the second mode, for example, current flows from via V30 to via V31 in resonator RC3, and current flows from via V31 to via V40 in resonator RC4. Furthermore, in the second mode, the current flowing into via V31 cancels out the current flowing out of via V31, resulting in current flowing from via V30 to via V40. The same applies to the filter device 100X of the comparative example.

[0086] Here, during the manufacturing process, we consider the possibility of shape deviations in the planar electrodes PC34 and PC34X. In the comparative example, deviations in the Y-axis dimension and positional shifts of the first U-shaped portion of the planar electrode PC34X are prone to occur. In this case, also in the first mode, the path length of the current path containing the via (via V30X + arrows AR10, AR12 + via 31X) in the resonator RC3X is almost unchanged from the path length of the current path containing the via (via V40X + arrows AR11, AR12 + via V31X) in the resonator RC4X. However, in the second mode, the current path is arrows AR20, AR22, AR21, so if the Y-axis dimension of the first portion changes, the path length from via V30X to via V40X changes. This will affect the filtering characteristics.

[0087] On the other hand, in the filter device 100 of Embodiment 1, since the path from the via V30 to the via V40 is a straight line, even if the size of the plate electrode PC34 is assumed to be deviated, the path length of the current path in the first mode (arrows AR15, AR17; arrows AR16, AR17) and the current path in the second mode (arrow AR25) hardly changes.

[0088] As described above, compared to the filter device 100X of the comparative example, the effect of the deviation in the shape of the plate electrode on the filtering characteristics is smaller in the filter device 100 of Embodiment 1.

[0089] Figure 8 This is a diagram used to illustrate the transmission characteristics of the filter device 100 of Embodiment 1 and the filter device 100X of the comparative example. Figure 8 In the diagram, the horizontal axis represents frequency, and the vertical axis represents the insertion loss (LN10, LN11) and reflection loss (LN15, LN16) of the filter device. Furthermore, the solid lines LN10 and LN15 represent the filter device 100 of Embodiment 1, while the dashed lines LN11 and LN16 represent the filter device 100X of the comparative example. Figure 9 yes Figure 8 A magnified view of the insertion loss curve in the image.

[0090] Reference Figure 8 and Figure 9 In the filter device 100 of Embodiment 1 and the filter device 100X of the comparative example, the reflection loss in the passband (3.8 to 5.2 GHz) and the attenuation characteristics outside the passband are approximately the same. However, as Figure 9 As shown, the peak value of the insertion loss within the passband is 1.37 dB in the case of the filter device 100 of Embodiment 1, which is 1.52 dB in the case of the comparative example filter device 100X, indicating an improvement of about 10%.

[0091] As described above, in a filter device containing four resonators, the resonators are arranged in two dimensions to ensure the spacing between the conductors, and a portion of the resonators in the middle section is shared to enhance magnetic coupling, thereby improving the Q value. As a result, the losses of the filter device can be reduced.

[0092] [Variations 1-3]

[0093] In variations 1 to 3, different shapes of the planar electrodes constituting the resonators RC3 and RC4 in the dielectric layer LY2 of the main body 110 will be described.

[0094] (Variation Example 1)

[0095] Figure 10 This is a top view of the filter device 100A in Modified Example 1. (Refer to...) Figure 10 In the filter device 100A, the following is adopted: Figure 3The plate electrode PC34 of the dielectric layer LY2 in the filter device 100 shown is replaced with a plate electrode PC34A. The plate electrode PC34A is configured as a strip electrode corresponding to the first part PC341 of the plate electrode PC34, that is, the plate electrode PC34A adopts a shape in which the second part PC342 of the plate electrode PC34 has been removed.

[0096] Furthermore, the common via V31 connected to the ground electrode PG is connected in the planar electrode PC34A between the via V30 connected to the first end and the via V40 connected to the second end. In the filter device 100A, by adjusting the distance LG11 between the via V30 and the via V31 and the distance LG12 between the via V40 and the via V31, the inductance value of the inductor L3 in the resonator RC3 and the inductance value of the inductor L4 in the resonator RC4 can be adjusted.

[0097] Figure 11 yes Figure 10 The equivalent circuit diagram of the filter device 100A is shown below. In the filter device 100A, as described above, compared to the filter device 100, the position of the via V31 is changed to the positive direction of the Y-axis. Along with this, [the following is omitted]. Figure 3 The capacitor electrode P34 is located in the dielectric layer LY3. Therefore, in the filter device 100A, as... Figure 11 The equivalent circuit is shown, becoming from Figure 3 The equivalent circuit removes the capacitor C34 between the connection node N3A of resonator RC3 and the connection node N4A of resonator RC4.

[0098] In such a filter device 100A, resonators RC3 and RC4 are arranged parallel to the arrangement direction of resonators RC1 and RC2, and a portion of the path from resonators RC3 and RC4 to the ground terminal is shared. Therefore, the Q value of the filter device is increased, resulting in improved loss characteristics in the filter device.

[0099] Furthermore, in the filter device 100 of Embodiment 1, the shared via V31 is disposed between the via V11 of resonator RC1 and the via V21 of resonator RC2. Therefore, the magnetic coupling between resonator RC1 and resonators RC3 and RC4, as well as the magnetic coupling between resonator RC2 and resonators RC3 and RC4, is relatively strong. However, on the other hand, the magnetic coupling between resonator RC1 and resonator RC4 is slightly weakened due to the influence of via V31.

[0100] On the other hand, in the structure of the filter device 100A of Modified Example 1, the position of the shared via V31 is shifted in the positive Y-axis direction compared to the filter device 100 of Embodiment 1. Therefore, compared to the filter device 100 of Embodiment 1, the magnetic coupling between resonator RC1 and resonators RC3 and RC4, and the magnetic coupling between resonator RC2 and resonators RC3 and RC4, are weakened. However, since there is no shared via V31 between the via V11 of resonator RC1 and the via V12 of resonator RC2, the magnetic coupling between resonator RC1 and resonator RC4 is strengthened compared to the filter device 100.

[0101] That is, by changing the position of the shared via V31 in the Y-axis direction, the strength of the magnetic coupling between the resonators can be adjusted.

[0102] (Variation Example 2)

[0103] Figure 12 This is a top view of the filter device 100B in Modified Example 2. (Refer to...) Figure 12 In the filter device 100B, the plate electrode PC34 of the dielectric layer LY2 in the filter device 100 is replaced with a plate electrode PC34B. The plate electrode PC34B is approximately E-shaped and includes a first portion PC341B configured as a strip electrode extending along the X-axis direction, and three protruding portions (second portion PC342B, third portion PC343B, and fourth portion PC344B) protruding from the first portion PC341B in the negative Y-axis direction.

[0104] More specifically, the second portion PC342B protrudes from the center of the first portion PC341B along the extending direction (X-axis direction) toward the space between the plate electrodes PC1 and PC2. The third portion PC343B protrudes from the negative X-axis end (first end) of the first portion PC341B toward the plate electrode PC1. The fourth portion PC344B protrudes from the positive X-axis end (second end) of the first portion PC341B toward the plate electrode PC2.

[0105] The via V30 in resonator RC3 is connected to the third part PC343B. Additionally, the via V40 in resonator RC4 is connected to the fourth part PC344B. A shared via V31 connected to the ground electrode PG is located in the second part PC342B.

[0106] By adopting this structure, compared to the case of filter device 100, the distance between vias V30 and V31, and between vias V40 and V31 in resonators RC3 and RC4 can be increased (corresponding to arrow LG20). Therefore, it is possible to adjust the individual inductors in resonator RC3 (L3), resonator RC4 (L4), and the shared inductor L34.

[0107] Furthermore, the spacing between the first portion PC341B of the plate electrode PC34B and the plate electrodes PC1 and PC2 (corresponding to arrow LG21) becomes wider. As a result, compared with the case of the filter device 100 in Embodiment 1, the magnetic coupling between resonators RC1 and RC3 and between resonators RC2 and RC4 can be reduced.

[0108] In such a filter device 100B, resonators RC3 and RC4 are also arranged parallel to the arrangement direction of resonators RC1 and RC2, and a portion of the path from resonators RC3 and RC4 to the ground terminal is shared. Therefore, the Q value of the filter device is increased, resulting in improved loss characteristics in the filter device.

[0109] (Variation Example 3)

[0110] Figure 13 This is a top view of the filter device 100C in Modified Example 3. (Refer to...) Figure 13 In the filter device 100C, the planar electrode PC34 of the dielectric layer LY2 in the filter device 100 is replaced with a planar electrode PC34C. The planar electrode PC34C is approximately Y-shaped and includes a first portion PC341C configured as a strip electrode extending along the X-axis direction, and three protruding portions (second portion PC342C, fifth portion PC345C, and sixth portion PC346C) protruding from the first portion PC341C in the Y-axis direction.

[0111] More specifically, the second portion PC342C protrudes from the center of the first portion PC341C along the extending direction (X-axis direction) towards the space between the plate electrodes PC1 and PC2. The fifth portion PC345C protrudes from the negative X-axis end (first end) of the first portion PC341C towards the opposite direction (positive Y-axis direction) of the plate electrode PC1. The sixth portion PC346C protrudes from the positive X-axis end (second end) of the first portion PC341C towards the opposite direction (positive Y-axis direction) of the plate electrode PC2.

[0112] The via V30 in resonator RC3 is connected to the fifth part PC345C. Additionally, the via V40 in resonator RC4 is connected to the sixth part PC346C. A shared via V31 connected to the ground electrode PG is located in the second part PC342C.

[0113] By adopting this structure, compared to the case of filter device 100, the distances between vias V30 and V31, and between via V40 and V31 (corresponding to arrow LG25) in resonators RC3 and RC4 become longer. Therefore, it is possible to adjust the individual inductors in resonator RC3 (L3), resonator RC4 (L4), and the shared inductor L34.

[0114] Furthermore, the distance between the first portion PC341C of the plate electrode PC34C and the plate electrodes PC1 and PC2 (corresponding to arrow LG26) is narrowed. As a result, compared with the case of the filter device 100 in Embodiment 1, the magnetic coupling between resonators RC1 and RC3 and the magnetic coupling between resonators RC2 and RC4 can be strengthened.

[0115] In such a filter device 100C, resonators RC3 and RC4 are also arranged parallel to the arrangement direction of resonators RC1 and RC2, and a portion of the path from resonators RC3 and RC4 to the ground terminal is shared. Therefore, the Q value of the filter device is increased, resulting in improved loss characteristics in the filter device.

[0116] [Variations 4-6]

[0117] In variations 4 to 6, the methods for adjusting the magnetic coupling between the resonators are explained.

[0118] (Variation Example 4)

[0119] Figure 14 This is an exploded perspective view showing an example of the stacked structure of the filter device 100D in Modified Example 4. In the filter device 100D, the planar electrodes of each resonator in the dielectric layer LY2 of the main body 110D are integrated as planar electrodes PCD. More specifically, in Embodiment 1... Figure 4In this design, the planar electrode PCD has an end of the planar electrode PC1 connected to the via V11 of the resonator RC1, and an end of the planar electrode PC2 connected to the via V21 of the resonator RC2, which is connected to the second part PC342 of the planar electrode PC34 constituting the resonators RC3 and RC4. That is, the via V11 of the resonator RC1, the via V21 of the resonator RC2, and the via V31 of the resonators RC3 and RC4 are shared as a single via V31D. The via V31D connects the planar electrode PCD of the dielectric layer LY2 and the ground electrode PG of the dielectric layer LY5. Furthermore, other structures are similar to... Figure 3 Similarly, the filter device 100 shown does not repeat the description of shared elements.

[0120] In the filter device 100D, four resonators RC1 to RC4 are connected through a common via V31D. Therefore, compared to the filter device 100 of Embodiment 1, the magnetic coupling between the resonators is strengthened, and thus the Q value of the filter device is further improved. Therefore, the loss characteristics of the filter device can be improved.

[0121] (Variation Example 5)

[0122] Figure 15 This is an exploded perspective view showing an example of the stacked structure of the filter device 100E in Modified Example 5. In general, the filter device 100E has... Figure 3 The filter device 100 of Embodiment 1 shown is... Figure 14 In the intermediate structure between the filter devices 100D shown in Modified Example 4, the vias in each resonator leading to the ground terminal GND are integrated in the lower layer of the plate electrode provided on the dielectric layer.

[0123] Reference Figure 15 To explain in more detail. Furthermore, in Figure 15 In the middle, to and Figure 3 The same elements of the filter device 100 are labeled with the same reference symbols.

[0124] The filter device 100E includes a main body 110E formed by stacking multiple dielectric layers LY11 to LY17 along a predetermined direction to form a cuboid or approximately cuboid. A directional mark DM for determining the orientation of the filter device 100E is disposed on the upper surface 111 (dielectric layer LY11) of the main body 110E. External terminals for connecting the filter device 100E to external devices are disposed on the lower surface 112 (dielectric layer LY17) of the main body 110E, namely an input terminal T1, an output terminal T2, and a ground terminal GND.

[0125] The filter device 100E, like the filter device 100 of Embodiment 1, has four LC parallel resonators RC1 to RC4. Resonator RC1 includes vias V10 and V11E, capacitor electrode P1, and plate electrode PC1. Resonator RC2 includes vias V20 and V21E, capacitor electrode P2, and plate electrode PC2. Resonator RC3 includes vias V30 and V31E, capacitor electrode P3, and plate electrode PC34. Resonator RC4 includes vias V40 and V31E, capacitor electrode P4, and plate electrode PC34. In resonators RC3 and RC4, vias V31E and plate electrode PC34 are shared.

[0126] Similar to the filter device 100, the dielectric layer LY12 is provided with a plate electrode PC1 included in the resonator RC1, a plate electrode PC2 included in the resonator RC2, and a plate electrode PC34 shared in the resonators RC3 and RC4.

[0127] A planar electrode PA1, configured as a strip electrode extending along the X-axis, is disposed in the dielectric layer LY13. The via V11E of resonator RC1 is connected to both the planar electrode PC1 and the planar electrode PA1. The via V12E of resonator RC2 is connected to both the planar electrode PC2 and the planar electrode PA1. Furthermore, the via V31E, shared by resonators RC3 and RC4, passes through the planar electrode PA1 from the planar electrode PC34 and connects to the ground electrode PG disposed in the dielectric layer LY16. In other words, the via V11E of resonator RC1 and the via V21E of resonator RC2 are shared with the via V31E of resonators RC3 and RC4 via the planar electrode PA1.

[0128] Furthermore, regarding the structure from dielectric layer LY14 to dielectric layer LY17, in addition to the aforementioned common via V31E, it employs the same... Figure 3 The structures of the filter device 100 from dielectric layer LY3 to dielectric layer LY6 are respectively described. Therefore, the detailed description of dielectric layers LY14 to LY17 will not be repeated.

[0129] Thus, in the filter device 100E of Modified Example 5, a portion of the path from the planar electrode of the dielectric layer LY12 to the ground electrode PG in resonators RC1 and RC2 is shared with the via V31E of resonators RC3 and RC4. Therefore, compared to the filter device 100 of Embodiment 1, the magnetic coupling between the resonators can be strengthened. Consequently, compared to the filter device 100 of Embodiment 1, the Q value of the filter device is further improved, and the loss characteristics of the filter device are enhanced.

[0130] Furthermore, the magnetic coupling between the resonators in filter device 100E is weaker than that between the resonators in filter device 100D of modified example 4. That is, the magnetic coupling between the resonators can be fine-tuned by adjusting the position (dielectric layer) where the vias on the ground side of each resonator are shared.

[0131] (Variation Example 6)

[0132] Figure 16 This is an exploded perspective view showing an example of the stacked structure of the filter device 100F in Modified Example 6. In general, the filter device 100F has... Figure 3 In the filter device 100 of Embodiment 1 shown, the second part PC342 of the plate electrode PC34 is arranged in a layer structure that is different from the first part PC341.

[0133] Reference Figure 16 To explain in more detail. (and) Figure 10 Similarly, in the filter device 100A, within the dielectric layer LY12 of the main body 110F, the integrated planar electrode PC34F in the resonators RC3 and RC4 is configured as a strip electrode extending along the X-axis direction. Additionally, a planar electrode PA2, configured as a strip electrode extending along the Y-axis direction, is disposed in the dielectric layer LY13.

[0134] The via V31F1, which is shared on the ground side of resonators RC3 and RC4, is connected to the central portion of the plate electrode PC34F and one end of the plate electrode PA2. The other end of the plate electrode PA2 is connected to the ground electrode PG of the dielectric layer LY16 via the via V31F2. That is, in the filter device 100F, a structure is adopted in which the via V31F1, which is shared on the ground side of resonators RC3 and RC4, is offset at a different position (dielectric layer LY13) than the position where the plate electrode PC34F is disposed (dielectric layer LY12).

[0135] The via V31F2 extends from dielectric layer LY13 to dielectric layer LY16 and... Figure 3 Similarly, the through-hole V31 in the filter device 100F is disposed between the through-hole V11 of resonator RC1 and the through-hole V12 of resonator RC2. Here, the through-hole V31F2 of filter device 100F is shorter than the through-hole V31 of filter device 100 in Embodiment 1, and the area of ​​mutual opposition is smaller compared to the case of filter device 100. Therefore, compared to the case of filter device 100, the magnetic coupling between resonators RC1, RC2 and resonators RC3, RC4 is weaker.

[0136] On the other hand, the length of the through-hole V31F2 is shorter than the lengths of the through-holes V11 and V21, thus creating a region where the through-holes V11 and V21 directly face each other. As a result, the magnetic coupling between the resonators RC1 and RC2 becomes stronger compared to the case of the filter device 100.

[0137] Thus, in the filter device 100F of Modified Example 6, the magnetic coupling between each resonator can be adjusted by offsetting the middle part of the extension direction of the common ground side via of the resonators RC3 and RC4 in the middle section.

[0138] [Variations 7-9]

[0139] In variations 7 to 9, the following structures are described, in which miniaturization and improved characteristics are achieved by increasing the input impedance of resonator RC1 connected to input terminal T1 and the output impedance of resonator RC2 connected to output terminal T2.

[0140] (Variation Example 7)

[0141] Figure 17 This is an exploded perspective view showing an example of the stacked structure of the filter device 100G in Modified Example 7. In general, the filter device 100G has a structure in which the plate electrode PC1 of the input-side resonator RC1 and the plate electrode PC2 of the output-side resonator RC2 in the filter device 100 of Embodiment 1 are configured as a rewound coil. Furthermore, in Figure 17 In the middle, from dielectric layer LY14 to dielectric layer LY17, the same as... Figure 3 The structures corresponding to dielectric layers LY3 to LY6 of the filter device 100 are described separately, so the detailed description of dielectric layers LY14 to LY17 will not be repeated.

[0142] Reference Figure 17 The dielectric layer LY12 of the main body 110G contains a planar electrode PC1G2 forming part of resonator RC1, a planar electrode PC2G2 forming part of resonator RC2, and a planar electrode PC34 forming part of resonators RC3 and RC4. Additionally, planar electrodes PC1G1 and PC2G1 are provided in the dielectric layer LY13. Each of the planar electrodes PC1G1, PC1G2, PC2G1, and PC2G2 is configured as a loop shape with the stacking direction (Z-axis direction) as the winding axis.

[0143] One end of the planar electrode PC1G2 is connected to the ground electrode PG disposed on the dielectric layer LY16 via the via V11. The other end of the planar electrode PC1G2 is connected to one end of the planar electrode PC1G1 on the dielectric layer LY13 via the via V10G2. The other end of the planar electrode PC1G1 is connected to the capacitor electrode P1 on the dielectric layer LY15 via the via V10G1. The planar electrodes PC1G1, PC1G2, and via V10G2 constitute a rewound coil with the Z-axis direction as the winding direction. With this structure, the inductance of the inductor L1 formed by the vias V10G1, V10G2, V11, and the planar electrodes PC1G1 and PC1G2 can be increased, thus increasing the impedance of the resonator RC1 (i.e., the input impedance of the filter device 100F).

[0144] Additionally, one end of the planar electrode PC2G2 is connected to the ground electrode PG disposed on the dielectric layer LY16 via the via V21. The other end of the planar electrode PC2G2 is connected to one end of the planar electrode PC2G1 on the dielectric layer LY13 via the via V20G2. The other end of the planar electrode PC2G1 is connected to the capacitor electrode P2 on the dielectric layer LY15 via the via V20G1. The planar electrodes PC2G1, PC2G2, and via V20G2 constitute a rewound coil with the Z-axis direction as the winding direction. With this structure, the inductance of the inductor L2 formed by the vias V20G1, V20G2, V21, and the planar electrodes PC2G1 and PC2G2 can be increased, thus improving the impedance of the resonator RC2 (i.e., the output impedance of the filter device 100F).

[0145] By increasing the input and output impedances, the coupling to external devices connected to the filter is increased, thus reducing the Q value for these devices. This results in reduced reflection loss and wider bandwidth within the passband.

[0146] (Variation Example 8)

[0147] In Modification 7, a structure for improving input and output impedance by constructing a rewound coil with the stacking direction (Z-axis direction) as the winding axis was described. In Modification 8, a structure for improving input and output impedance by constructing a rewound coil with the direction orthogonal to the stacking direction as the winding axis was described.

[0148] Figure 18This is an exploded perspective view showing an example of the stacked structure of the filter device 100H in Modified Example 8. In the dielectric layer LY12 of the main body 110H, planar electrodes PC11 and PC13 constituting part of resonator RC1, planar electrodes PC21 and PC23 constituting part of resonator RC2, and planar electrode PC34 constituting part of resonators RC3 and RC4 are disposed. Additionally, planar electrodes PC12 and PC22 are disposed in the dielectric layer LY13. Furthermore, in… Figure 18 In the filter device 100H, there is no repetition with Figure 17 Explanation of recurring elements.

[0149] The planar electrodes PC11, PC13, PC21, and PC23 are configured as strip electrodes extending along the X-axis. The planar electrodes PC11 and PC13 are arranged parallel to each other in the region of the second portion PC342 of the planar electrode PC34, which is closer to the negative X-axis direction. Furthermore, the planar electrodes PC21 and PC23 are arranged parallel to each other in the region of the second portion PC342, which is closer to the positive X-axis direction.

[0150] The negative X-axis end of the plate electrode PC11 is connected to the capacitor electrode P1 of the dielectric layer LY15 via the via V10. The positive X-axis end of the plate electrode PC11 is connected to one end of the plate electrode PC12 disposed on the dielectric layer LY13 via the via VC11. The other end of the plate electrode PC12 is connected to the negative X-axis end of the plate electrode PC12 via the via VC12. The positive X-axis end of the plate electrode PC12 is connected to the ground electrode PG of the dielectric layer LY16 via the via V11. The plate electrodes PC11-PC13 and the vias VC11 and VC12 constitute a rewound coil with the Y-axis as the winding direction. With this structure, the inductance of the inductor L1 formed by the vias V10, V11, VC11, VC12 and the plate electrodes PC11-PC13 increases, thus increasing the input impedance of the filter device 100H.

[0151] Furthermore, the positive X-axis end of the plate electrode PC21 is connected to the capacitor electrode P2 of the dielectric layer LY15 via the via V20. The negative X-axis end of the plate electrode PC21 is connected to one end of the plate electrode PC22 disposed on the dielectric layer LY13 via the via VC21. The other end of the plate electrode PC22 is connected to the positive X-axis end of the plate electrode PC22 via the via VC22. The negative X-axis end of the plate electrode PC22 is connected to the ground electrode PG of the dielectric layer LY16 via the via V21. The plate electrodes PC21 to PC23 and the vias VC21 and VC22 constitute a rewound coil with the Y-axis direction as the winding direction. With this structure, the inductance of the inductor L2, which is composed of the vias V20, V21, VC21, VC22 and the plate electrodes PC21 to PC23, increases, thus increasing the output impedance of the filter device 100H.

[0152] In addition, Figure 18 In the example, the Y-axis direction is used as the winding axis in the resonator RC1 and RC2. However, as long as the direction of the winding axis is orthogonal to the Z-axis direction, it is acceptable. For example, the X-axis direction can also be used as the winding axis.

[0153] In the structure of the filter device 100G in Modified Example 8, the input and output impedances become higher, thus achieving a lower resonant frequency, miniaturization of the filter device, reduction of reflection loss in the passband, and widening of the broadband domain.

[0154] (Variation Example 9)

[0155] Figure 19 This is an exploded perspective view showing an example of the stacked structure of the filter device 100I in Modified Example 9. In general, the filter device 100I employs... Figure 14 The structure of the filter device 100D in Modified Example 4 shown is... Figure 17 The structure is obtained by combining the structure of the filter device 100G shown in Modified Example 7. In other words, in the dielectric layer LY12 of the main body 110I, the plate electrode, which is part of each resonator, is also configured as a plate electrode PCI with the filter device 100D, and a rewound type coil with the stacking direction as the winding axis is formed in the resonators RC1 and RC2.

[0156] Reference Figure 19 The planar electrode PCI in the dielectric layer LY12 of the main body 110I is connected to the ground electrode PG of the dielectric layer LY16 through a common via V31I. In the planar electrode PCI, it is connected to... Figure 3The end of the annular portion corresponding to the planar electrode PC1 is connected to one end of the annular planar electrode PC11 disposed on the dielectric layer LY13 via the through-hole V10I2. The other end of the planar electrode PC11 is connected to the capacitor electrode P1 of the dielectric layer LY15 via the through-hole V10I1. The planar electrodes PC11, PC11 and the through-hole V10I2 constitute a rewound coil with the stacking direction as the winding axis.

[0157] Additionally, in planar electrode PCI, with Figure 3 The end of the annular portion corresponding to the planar electrode PC2 is connected to one end of the annular planar electrode PC21 disposed on the dielectric layer LY13 via the via V20I2. The other end of the planar electrode PC21 is connected to the capacitor electrode P2 of the dielectric layer LY15 via the via V20I1. The planar electrodes PC1, PC21 and the via V20I2 constitute a rewound coil with the stacking direction as the winding axis.

[0158] Furthermore, in the non-repetitive filtering device 100I, and Figure 17 Description of the 100G repeating elements of the filter device.

[0159] Similar to filter 100I, the magnetic coupling between resonators is strengthened by sharing the vias on the ground side of each resonator, thereby improving the loss characteristics of the filter. Furthermore, by constructing compound-wound coils in the input and output resonators, the input and output impedances are increased, thereby achieving lower resonant frequencies, miniaturization of the filter, reduction of reflection losses in the passband, and wider bandwidth.

[0160] [Implementation Method 2]

[0161] In Embodiment 1, a filter device comprising four resonators was described. In Embodiment 2, a filter device comprising six resonators was described.

[0162] Figure 20 This is the equivalent circuit diagram of the filter device 100J in Embodiment 2. (Refer to...) Figure 20 The filter device 100J includes an input terminal T1, an output terminal T2, and resonators RC1 to RC6. Resonators RC1 to RC6 are LC parallel resonators, each containing an inductor and a capacitor. Resonator RC1 is connected to the input terminal T1, and resonator RC2 is connected to the output terminal T2. Resonators RC3 to RC6 are connected between resonators RC1 and RC2. In general, the filter device 100J employs... Figure 2 The filter device 100 described herein has a structure in which resonators RC5 and RC6 are further connected between resonators RC3 and RC4.

[0163] The resonator RC1 includes an inductor L1 and a capacitor C1 connected in parallel. One connection node N1A of the inductor L1 and capacitor C1 is connected to the input terminal T1. The other connection node N1B of the inductor L1 and capacitor C1 is connected to the ground terminal GND.

[0164] The resonator RC2 includes an inductor L2 and a capacitor C2 connected in parallel. One connection node N2A of the inductor L2 and capacitor C2 is connected to the output terminal T2. The other connection node N1B of the inductor L2 and capacitor C2 is connected to the ground terminal GND.

[0165] The resonator RC3 includes inductors L3 and L36 connected in series, and capacitor C3 connected in parallel with inductors L3 and L36. The connection node N3A of inductor L3 and capacitor C3 is connected to the connection node N1A of resonator RC1 (i.e., input terminal T1) via capacitor C13. The connection node N3B of inductor L36 and capacitor C3 is connected to the ground terminal GND.

[0166] The resonator RC4 includes inductors L4 and L36 connected in series, and capacitor C4 connected in parallel with inductors L4 and L36. The connection node N4A of inductor L4 and capacitor C4 is connected to the connection node N2A of resonator RC2 (i.e., output terminal T2) via capacitor C24. The connection node N4B of inductor L36 and capacitor C4 is connected to the ground terminal GND.

[0167] The resonator RC5 includes inductors L5 and L36 connected in series, and capacitor C5 connected in parallel with inductors L5 and L36. The connection point N5A between inductor L5 and capacitor C5 is connected to the connection point N3A of resonator RC3 via capacitor C35. The connection point N5B between inductor L36 and capacitor C5 is connected to the ground terminal GND.

[0168] Resonator RC6 includes inductors L6 and L36 connected in series, and capacitor C6 connected in parallel with inductors L6 and L36. The connection point N6A between inductor L6 and capacitor C6 is connected to the connection point N4A of resonator RC4 via capacitor C46. The connection point N6B between inductor L36 and capacitor C6 is connected to the ground terminal GND. As described above, resonators RC3 through RC6 share inductor L36.

[0169] Capacitor C12 is connected between connection nodes N1A and N2A (i.e., between input terminal T1 and output terminal T2). Additionally, capacitor C34 is connected between connection nodes N3A and N4A. Furthermore, capacitor C56 is connected between connection nodes N5A and N6A.

[0170] Each resonator is coupled to the others via electromagnetic field coupling. Thus, the filter device 100J has a structure with four resonators arranged between the input terminal T1 and the output terminal T2, mutually coupling their electromagnetic fields. The high-frequency signal input to the input terminal T1 is transmitted through the electromagnetic field coupling of resonators RC1 to RC6 and output from the output terminal T2. At this time, only the signal within the frequency band determined by the resonant frequency of each resonator is transmitted to the output terminal T2. That is, the filter device 100J functions as a bandpass filter that allows signals of the desired frequency band to pass through by adjusting the resonant frequencies of each resonator.

[0171] Figure 21 It means Figure 20 An exploded perspective view of an example of the stacked structure of a 100J filter device. Figure 21 In the middle, to and Figure 3 The same reference numerals are used for elements identical to those in the filter device 100 of Embodiment 1 shown. No repetition with... Figure 3 Explanation of recurring elements.

[0172] Reference Figure 21 The filter device 100J includes a main body 110J formed by stacking multiple dielectric layers LY21 to LY26 along a predetermined direction to form a cuboid or approximately cuboid. Each dielectric layer of the main body 110J is formed of ceramic such as LTCC or resin.

[0173] A directional mark DM for determining the orientation of the filter device 100J is disposed on the upper surface 111 (dielectric layer LY21) of the main body 110J. External terminals for connecting the filter device 100J to external devices are disposed on the lower surface 112 (dielectric layer LY26), namely input terminal T1, output terminal T2, and multiple ground terminals GND. The multiple ground terminals GND are respectively connected to the ground electrode PG disposed on the dielectric layer LY25 through corresponding through-holes VG.

[0174] picture Figure 20 As described, the filter device 100J has six LC parallel resonators RC1 to RC6. More specifically, resonator RC1 includes vias V10 and V11, capacitor electrode P1, and plate electrode PC1. Resonator RC2 includes vias V20 and V21, capacitor electrode P2, and plate electrode PC2. Resonators RC3 to RC6 include vias V30, V40, V50, and V60, as well as a shared plate electrode PCJ and via V31J.

[0175] A common planar electrode PCJ is disposed on the dielectric layer LY22, comprising a first portion PCJ1 and a third portion PCJ3 configured as strip electrodes extending along the X-axis direction, and a second portion PCJ2 connecting the first portion PCJ1 and the third portion PCJ3. The second portion PCJ2 extends from the center of the first portion PCJ1 and the third portion PCJ3 in the Y-axis direction.

[0176] The first portion PCJ1 of the planar electrode PCJ is arranged adjacent to the planar electrodes PC1 and PC2, which respectively constitute parts of resonators RC1 and RC2, in the positive Y-axis direction. The third portion PCJ3 of the planar electrode PCJ is arranged further adjacent to the first portion PCJ1 in the positive Y-axis direction. That is, the first portion PCJ1 is arranged between the third portion PCJ3 and the planar electrodes PC1 and PC2.

[0177] The second part, PCJ2, is connected to the ground electrode PG of the dielectric layer via via V31J. Via V31J functions as a common grounding via in resonators RC3 to RC6.

[0178] A via V30 is connected to the negative X-axis end of the first part PCJ1. The first part PCJ1 and vias V30 and V31J form a resonator RC3. A via V40 is connected to the positive X-axis end of the first part PCJ1. The first part PCJ1 and vias V40 and V31J form a resonator RC4.

[0179] A via V50 is connected to the negative X-axis end of the third part PCJ3. The via V50 connects to the capacitor electrode P5 disposed on the dielectric layer LY24. Viewed from the normal direction of the main body 110J, a portion of the capacitor electrode P5 overlaps with the ground electrode PG. The capacitor electrode P5 and the ground electrode PG constitute... Figure 20 The capacitor C5. Furthermore, when viewed from the normal direction of the main body 110J, a portion of the capacitor electrode P5 also overlaps with the planar electrode P35 disposed on the dielectric layer LY23. The planar electrode P35 is connected to the via V30. The capacitor electrode P5 and the planar electrode P35 constitute... Figure 20 The capacitor is C35.

[0180] A via V60 is connected to the end of the third part PCJ3 in the positive X-axis direction. The via V60 connects to the capacitor electrode P6 disposed on the dielectric layer LY24. Viewed from the normal direction of the main body 110J, a portion of the capacitor electrode P6 overlaps with the ground electrode PG. The capacitor electrode P6 and the ground electrode PG constitute... Figure 20The capacitor C6. Furthermore, when viewed from the normal direction of the main body 110J, a portion of the capacitor electrode P6 also overlaps with the planar electrode P46 disposed on the dielectric layer LY23. The planar electrode P46 is connected to the via V40. The capacitor electrode P6 and the planar electrode P46 constitute a... Figure 20 The capacitor is C46.

[0181] Furthermore, when viewed from the normal direction of the main body 110J, a portion of capacitor electrode P5 and a portion of capacitor electrode P6 also overlap with the planar electrode P56 disposed on the dielectric layer LY23. The capacitor electrodes P5 and P6 and the planar electrode P56 constitute a... Figure 20 The capacitor is C56.

[0182] It is known that increasing the number of resonator segments facilitates improvements in out-of-passband attenuation characteristics and broadband domain design. However, when increasing the number of resonator segments with the same build size, narrowing the spacing between resonators within the body reduces the Q value, resulting in increased losses and deteriorated passband characteristics.

[0183] Like the filter device 100J in Embodiment 2, by arranging resonator groups (two resonators arranged along the long side of the main body, i.e., the resonator groups are arranged adjacent to each other along the short side of the main body, i.e., the spacing between each resonator group can be maximized within the main body. Furthermore, in some resonators, the magnetic coupling between the resonators is strengthened by sharing the vias on the ground side. With these structures, the Q value is improved compared to a filter device that arranges multiple resonators adjacent to each other in one direction. Therefore, the loss characteristics in the filter device are improved.

[0184] [Variations 10 and 11]

[0185] In variations 10 and 11, the method of adjusting the magnetic coupling between resonators by changing the structure of the planar electrodes that constitute part of resonators RC3 to RC6 in a filter device containing 6 resonators will be described.

[0186] (Variation Example 10)

[0187] Figure 22 This is an exploded perspective view showing an example of the stacked structure of the filter device 100K in Modified Example 10. In general, the filter device 100K adopts the following structure, which... Figure 21 In the filter device 100J of Embodiment 2 shown, the plate electrode PCJ is separated into plate electrodes for resonators RC3 and RC4 and plate electrodes for resonators RC5 and RC6, and the plate electrodes for resonators RC5 and RC6 are arranged in different positions (dielectric layer).

[0188] Reference Figure 22 To explain in more detail, the filter device 100K includes a main body 110K formed by stacking multiple dielectric layers LY31 to LY37 along a predetermined direction to create a cuboid or approximately cuboid. Furthermore, Figure 22 The dielectric layers LY31, LY34~LY37 in the middle and Figure 21 The dielectric layers LY21, LY23~LY26 in the middle correspond to respectively. Figure 22 In, do not repeat with Figure 21 Explanation of recurring elements.

[0189] A planar electrode PC1, which forms part of resonator RC1, a planar electrode PC2, which forms part of resonator RC2, and a planar electrode PC34K, which is shared by resonators RC3 and RC4, are provided in the dielectric layer LY32 of the main body 110K. In addition, a planar electrode PC56K, which is shared by resonators RC5 and RC6, is provided in the dielectric layer LY33.

[0190] The planar electrode PC34K includes a first portion extending along the X-axis and a second portion protruding from the first portion in the positive Y-axis direction. A via V30 for resonator RC3 is connected to one end of the first portion of the planar electrode PC34K, and a via V40 for resonator RC4 is connected to the other end.

[0191] The planar electrode PC56K includes a first portion extending along the X-axis and a second portion protruding from the first portion in the negative Y-axis direction. A via V50 for resonator RC5 is connected to one end of the first portion of the planar electrode PC56K. A via V60 for resonator RC6 is connected to the other end of the first portion of the planar electrode PC56K. Figure 22 In the middle, the via V60 is hidden behind other elements.

[0192] When viewed from the normal direction, a portion of the second part of the plate electrode PC34K overlaps with a portion of the second part of the plate electrode PC56K. The plate electrode PC34K and the plate electrode PC56K are connected to the ground electrode PG of the dielectric layer LY36 through the through hole V31K passing through the overlapping portion.

[0193] In filter device 100K, the planar electrode PC34K, which forms part of resonators RC3 and RC4, and the planar electrode PC56K, which forms part of resonators RC5 and RC6, are disposed in different dielectric layers. Therefore, compared with filter device 100J in embodiment 2, the length of the shared portion in via V31K is shorter. Furthermore, the lengths of vias V50 and V60 in resonators RC5 and RC6 are shorter than the lengths of vias V30 and V40 in resonators RC3 and RC4, thus shortening the opposing regions of the vias. Therefore, in filter device 100K, compared with filter device 100J, the magnetic coupling between resonators RC3 and RC4 and resonators RC5 and RC6 is weaker.

[0194] Like the filter device 100K in Modified Example 10, the magnetic coupling between resonators can be adjusted by arranging the plate electrodes used in resonators RC3 and RC4 and the plate electrodes used in resonators RC5 and RC6 in different dielectric layers.

[0195] (Variation Example 11)

[0196] Figure 23 This is an exploded perspective view showing an example of the stacked structure of the filter device 100L in Modified Example 11. In general, the filter device 100L employs... Figure 21 In the filter device 100J of Embodiment 2 shown, the second part PCJ2 of the planar electrode PCJ is disposed in a structure with different dielectric layers. Furthermore, in Figure 23 In, do not repeat with Figure 21 and Figure 22 Explanation of recurring elements.

[0197] Reference Figure 23 In the dielectric layer LY32 of the main body 110L, in addition to the plate electrode PC1 which forms part of resonator RC1 and the plate electrode PC2 which forms part of resonator RC2, there are also plate electrodes PC34L which forms part of resonators RC3 and RC4 and plate electrodes PC56L which forms part of resonators RC5 and RC6. Plate electrode PC34L corresponds to the first part PCJ1 of plate electrode PCJ in filter device 100J, and plate electrode PC56L corresponds to the third part PCJ3 of plate electrode PCJ in filter device 100J.

[0198] A via V31L is connected to the center of the planar electrode PC34L. Similarly, a via V51L is connected to the center of the planar electrode PC56L. Both vias V31L and V51L are connected to the planar electrode PA3 disposed in the dielectric layer LY33. The planar electrode PA3 is configured as a strip electrode extending along the Y-axis in the dielectric layer LY33. A via V35L is connected to the center of the planar electrode PA3. The planar electrode PA3 is connected to the ground electrode PG of the dielectric layer LY36 via the via V35L.

[0199] By adopting this structure, the shared area of ​​the ground-side vias between resonators RC3, RC4 and RC5, RC6 can be adjusted. In the filter device 100L, with... Figure 21 Compared to the filter device 100J, the shared area of ​​the grounding side vias between resonators RC3, RC4 and RC5, RC6 is smaller. Therefore, the magnetic coupling between resonators RC3, RC4 and RC5, RC6 in the filter device 100L is weaker than that in the filter device 100J.

[0200] Like the filter device 100L in Modified Example 11, by connecting the plate electrodes used in resonators RC3 and RC4 and the plate electrodes used in resonators RC5 and RC6 using different dielectric layers, the magnetic coupling between resonators RC3 and RC4 and resonators RC5 and RC6 can be adjusted.

[0201] [Implementation Method 3]

[0202] In Embodiment 3, a structure that reduces the insertion loss of the filter device by multiplying each of the planar electrodes that constitute part of the inductor in each resonator.

[0203] Figure 24 This is an exploded perspective view showing an example of the stacked structure of the filter device 100M in Embodiment 3. (Refer to...) Figure 24 In short, the 100M filter uses Figure 3 The structure of the dielectric layer LY2 in the filter device 100 of Embodiment 1 described herein is provided in a structure of multiple dielectric layers. Furthermore, in Figure 24 In the 100M filter device, there is no repetition with Figure 3 The description of the repeated elements of the filter device 100.

[0204] The filter device 100M includes a main body 110M formed by stacking multiple dielectric layers LY41 to LY47 along a predetermined direction to form a cube or approximately cuboid. The dielectric layers LY41 and LY43 to LY47 in the main body 110M are... Figure 3 The dielectric layers LY1 to LY6 in the middle correspond to respectively.

[0205] Plate electrodes PC1M, PC2M, and PC34M are provided in dielectric layer LY43. Plate electrodes PC1M, PC2M, and PC34M have the same shape as plate electrodes PC1, PC2, and PC34 in dielectric layer LY42.

[0206] Plate electrode PC1M is connected in parallel with plate electrode PC1 to vias V10 and V11. Plate electrode PC2M is connected in parallel with plate electrode PC2 to vias V20 and V21. Plate electrode PC34M is connected in parallel with plate electrode PC34 to vias V30, V31 and V40.

[0207] In this way, by multiplying the planar electrodes in each resonator, the current flowing through each planar electrode is reduced, thereby reducing the power loss in the inductor of each resonator. As a result, the insertion loss in the passband of the filter device is reduced, thus improving the throughput characteristics.

[0208] [Implementation Method 4]

[0209] In Embodiment 4, a structure that suppresses the degradation of the resonator's performance and achieves miniaturization will be described.

[0210] Figure 25 This is an exploded perspective view showing an example of the stacked structure of the filter device 100N in Embodiment 4. Additionally, Figure 26 This is a top view of the filter device 100N from the dielectric layer to the dielectric layer, viewed from the stack-up direction. The equivalent circuit of the filter device 100N is shown below. Figure 2 The same applies to the filter device 100 shown.

[0211] Reference Figure 25 and Figure 26 The filter device 100N has resonators RC1 to RC4 installed in the main body 110N, which has multiple dielectric layers LY51 to LY60.

[0212] Resonator RC1 includes vias V10, V10N, V11, capacitor electrode P1, and planar electrodes PC10N, PC10N1, PC11N, and PC11N1. Resonator RC2 includes vias V20, V20N, V21, capacitor electrode P2, and planar electrodes PC20N, PC20N1, PC21N, and PC21N1.

[0213] Additionally, resonator RC3 includes vias V30 and V31, capacitor electrode P3, and planar electrodes PC34N and PC34N1. Resonator RC4 includes vias V40 and V41, capacitor electrode P4, and planar electrodes PC34N and PC34N1. Furthermore, in resonators RC3 and RC4, via V31 and planar electrodes PC34N and PC34N1 are shared.

[0214] A directional mark DM for determining the orientation of the filter device 100 is provided on the upper surface 111 (dielectric layer LY51) of the main body 110. External terminals for connecting the filter device 100N to external devices, namely input terminal T1, output terminal T2 and ground terminal GND, are provided on the lower surface 112 (dielectric layer LY60) of the main body 110.

[0215] Input terminal T1 is connected to plate electrode PT1 disposed on dielectric layer LY59 via via VT10. Plate electrode PT1 is connected to capacitor electrode P1 of resonator RC1 disposed on dielectric layer LY57 via via VT11.

[0216] Viewed from the normal direction of the main body 110, a portion of capacitor electrode P1 overlaps with capacitor electrode PT11 disposed on dielectric layer LY58. Capacitor electrode PT11 is connected to ground electrode PG of dielectric layer LY59 via via hole VG1. Furthermore, ground electrode PG is connected to ground terminal GND via via hole VG. Therefore, capacitor electrode P1 and capacitor electrode P11 constitute a... Figure 2 Capacitor C1.

[0217] Capacitor electrode P1 is connected via via V10 to one end of the planar electrode PC11N of dielectric layer LY54 and one end of the planar electrode PC11N1 of dielectric layer LY55. Both planar electrodes PC11N and PC11N1 are configured with the same approximate C-shape. The other end of planar electrodes PC11N and PC11N1 is connected via via V10N to one end of the planar electrode PC10N of dielectric layer LY52 and one end of the planar electrode PC10N1 of dielectric layer LY53. Both planar electrodes PC10N and PC10N1 are configured with the same approximate C-shape. The other end of planar electrodes PC10N and PC10N1 is connected via via V11 to the ground electrode PG of dielectric layer LY59. The planar electrodes PC10N, PC10N1, PC11N, and PC11N1, along with vias V10, V10N, and V11, constitute a complete system. Figure 2 Inductor L1.

[0218] Output terminal T2 is connected to the plate electrode PT2 disposed on the dielectric layer LY59 through via VT20. Plate electrode PT2 is connected to the capacitor electrode P2 of resonator RC2 disposed on the dielectric layer LY57 through via VT21.

[0219] Viewed from the normal direction of the main body 110, a portion of capacitor electrode P2 overlaps with capacitor electrode PT12 disposed on dielectric layer LY58. Capacitor electrode PT12 is connected to the ground electrode PG of dielectric layer LY59 via via hole VG2. Capacitor electrode P2 and capacitor electrode P12 constitute... Figure 2 Capacitor C2.

[0220] Capacitor electrode P2 is connected via via V20 to one end of the planar electrode PC21N of dielectric layer LY54 and one end of the planar electrode PC21N1 of dielectric layer LY55. Both planar electrodes PC21N and PC21N1 are configured with the same approximate C-shape. The other end of planar electrodes PC21N and PC21N1 is connected via via V20N to one end of the planar electrode PC12N of dielectric layer LY52 and one end of the planar electrode PC20N1 of dielectric layer LY53. Both planar electrodes PC20N and PC20N1 are configured with the same approximate C-shape. The other end of planar electrodes PC20N and PC20N1 is connected via via V21 to the ground electrode PG of dielectric layer LY59. The planar electrodes PC20N, PC20N1, PC21N, and PC21N1, along with vias V20, V20N, and V21, form a... Figure 2 The inductor L2.

[0221] Viewed from the normal direction of the main body 110, the capacitor electrode P1 of resonator RC1 and the capacitor electrode P2 of resonator RC2 partially overlap with the capacitor electrode P12 disposed on the dielectric layer LY56. The capacitor electrodes P1, P2, and P12 constitute... Figure 2 Capacitor C12.

[0222] The via V10 of the resonator RC1 is also connected to the capacitor electrode P13 extending along the Y-axis in the dielectric layer LY56. Viewed from the normal direction of the main body 110, a portion of the capacitor electrode P13 overlaps with the capacitor electrode P3 of the resonator R3 disposed in the dielectric layer LY57. The capacitor electrode P3 and capacitor electrode P13 constitute... Figure 2 The capacitor C13. The capacitor electrode P3 is connected to the plate electrode PC34N of the dielectric layer LY52 and the plate electrode PC34N1 of the dielectric layer LY53 via the via V30.

[0223] The via V20 of resonator RC2 is also connected to capacitor electrode P24 extending along the Y-axis in dielectric layer LY56. Viewed from the normal direction of body 110, a portion of capacitor electrode P24 overlaps with capacitor electrode P4 of resonator R4 disposed in dielectric layer LY57. Capacitor electrode P4 and capacitor electrode P24 constitute... Figure 2 The capacitor C24. The capacitor electrode P4 is connected to the plate electrode PC34N of the dielectric layer LY52 and the plate electrode PC34N1 of the dielectric layer LY53 via the via V40.

[0224] The planar electrodes PC34N and PC34N1 each have the same approximate E-shape. For example... Figure 26 As shown, the planar electrode PC34N includes: a first portion PC341N configured as a strip electrode extending along the X-axis direction, and three protruding portions (a second portion PC342N, a third portion PC343N, and a fourth portion PC344N) extending from the first portion PC341N in the positive Y-axis direction. The second portion PC342N extends from the center of the first portion PC341N along the extension direction (X-axis direction) towards the space between the planar electrodes PC10N and PC20N. The third portion PC343N extends from the end (first end) of the first portion PC341N in the negative X-axis direction towards the positive Y-axis direction. The fourth portion PC344N extends from the end (second end) of the first portion PC341N in the positive X-axis direction towards the positive Y-axis direction. Furthermore, the planar electrode PC34N1 also has the same shape as the planar electrode PC34N.

[0225] The via V30 of resonator RC3 is connected to the end of the third part of the planar electrodes PC34N and PC34N1. The via V40 of resonator RC4 is connected to the end of the third part of the planar electrodes PC34N and PC34N1.

[0226] The second part of the planar electrodes PC34N and PC34N1 is connected to a via 31 shared in the resonators RC3 and RC4. The via 31 is connected to the ground electrode PG of the dielectric layer LY59.

[0227] Viewed from the normal direction of the main body 110, the capacitor electrode P3 of resonator RC3 and the capacitor electrode P4 of resonator RC4 partially overlap with the capacitor electrode P34 disposed on the dielectric layer LY56. The capacitor electrodes P3, P4, and P34 constitute... Figure 2 The capacitor is C34.

[0228] As described above, the equivalent circuit of the filter device 100N in Embodiment 4 is basically the same as that of the filter device 100 in Embodiment 1, with two resonators arranged in the X-axis direction and two resonators also arranged in the Y-axis direction. As a result, the spacing between adjacent resonators is widened, and thus, even with the same overall area of ​​the dielectric layer, the Q value is increased, reducing the loss of the filter device.

[0229] Furthermore, in the filter device 100N of Embodiment 4, such as Figure 26 As shown, the resonator RC1, connected to the input terminal T1, is disposed in the region enclosed by the first portion PC341N, the second portion PC342N, and the third portion PC343N of the plate electrode PC34N constituting the resonator RC3. Similarly, the resonator RC2, connected to the output terminal T2, is disposed in the region enclosed by the first portion PC341N, the second portion PC342N, and the fourth portion PC344N of the plate electrode PC34N constituting the resonator RC4.

[0230] By employing this resonator configuration, the distance between the vias connecting to the planar electrodes is increased for the second resonator RC3 and the third resonator RC4, thus increasing the inductance of the resonators. When lowering the resonant frequency or miniaturizing the filter, the capacitance or inductance of the resonator is typically increased. However, increasing the capacitance actually lowers the Q value. Therefore, as with the 100N filter, increasing the inductance by lengthening the line length of the planar electrodes can suppress the decrease in Q value and achieve a lower resonant frequency and / or miniaturization.

[0231] Furthermore, in the 4-segment filter, attenuation poles are generated through the cross-coupling of resonator RC1 connected to input terminal T1 and resonator RC4 connected to output terminal T2. Therefore, if the vias connected to the input and output terminals are coupled to the shielding of other devices or housings located outside the filter device, the filtering characteristics may be affected.

[0232] In the filter device 100N of Embodiment 4, when the main body 110 is viewed from the stacking direction, resonators RC1 and RC4 are disposed inside resonators RC2 and RC3. Therefore, the vias connected to the input / output terminals are positioned closer to the center of the main body 110 than resonators RC2 and RC3. Thus, compared to the case where the vias connected to the input / output terminals are positioned near the periphery of the main body 110, coupling between the vias connected to the input / output terminals and the external shielding is suppressed, thereby suppressing the influence on the filtering characteristics caused by the external shielding.

[0233] (Variation Example 12)

[0234] Figure 27This is an exploded perspective view showing an example of the stacked structure of the filter device 100P in Modified Example 12. Furthermore, Figure 28 This is a top view of the filter device 100P from the dielectric layer to the dielectric layer, viewed from the stacking direction.

[0235] In the filter device 100P, the vias connecting the plate electrodes of the dielectric layer LY52 and the ground electrode PG in the filter device 100N of Embodiment 4 are shared midway through the process. Figure 27 and Figure 28 In, do not repeat with Figure 25 and Figure 26 Explanation of repeated parts.

[0236] Reference Figure 27 and Figure 28 The filter device 100P includes a main body 110P formed by stacking multiple dielectric layers LY71 to LY80 along a specified direction to form a cuboid or approximately cuboid.

[0237] In the main body 110P, one end of the planar electrodes PC10N and PC10N1 constituting the resonator RC1 is connected to the via V11. The via V11 extends from the dielectric layer LY72 to the dielectric layer LY75, is connected to the planar electrode PC50 via the dielectric layer LY74, and is connected to the planar electrode PC51 via the dielectric layer LY75. The planar electrodes PC50 and PC51 are linear electrodes extending along the X-axis in the dielectric layers LY74 and LY75, respectively.

[0238] The planar electrodes PC50 and PC51 are connected to one end of the planar electrodes PC20 and PC20N constituting resonator RC2, and to one end of the planar electrodes PC34N and PC34N1 constituting resonators RC3 and RC4, respectively. Like the via V11, via V21 extends from dielectric layer LY72 to dielectric layer LY75. On the other hand, via V31 extends from dielectric layer LY72 to dielectric layer LY79 and is connected to the ground electrode PG. That is, vias V11, V21, and V31 are shared through the planar electrodes PC50 and PC51.

[0239] Thus, by sharing the vias from the plate electrode constituting the resonator to the ground electrode PG, the magnetic coupling between resonators RC1 and RC2, between resonators RC1 and RC3, and between resonators RC2 and RC4 becomes stronger compared to the filter device 100N in Embodiment 4. If the magnetic coupling between the resonators becomes stronger, the impedance increases, thus widening the passband and / or increasing the abruptness of attenuation near the passband width.

[0240] (Variation Example 13)

[0241] Figure 29 This is a top view of the filter device 100Q in Modified Example 13, viewed from the stacking direction. In the filter device 100Q, one end of the planar electrode PC1Q constituting resonator RC1 and one end of the planar electrode PC2Q constituting resonator RC2 are connected to the vias V31 in resonators RC3 and RC4. That is, the planar electrodes PC1Q, PC2Q, and PC3Q are connected to the ground electrode PG through a shared via V31. Thus, by connecting all resonators RC1 to RC4 to the ground electrode PG using the shared via V31, the magnetic coupling between the resonators is stronger compared to the case of Modified Example 12. Therefore, the increase in passband width and the abruptness of attenuation are further improved.

[0242] Furthermore, in the filter device 100Q of Modified Example 13, the through holes V10 and V20 connected to the input and output terminals are positioned further centrally on the main body 110 than the filter devices 100N and 100P. Therefore, in the filter device 100Q, the reduction in filtering characteristics caused by external shielding can be further suppressed.

[0243] Furthermore, in the above-described embodiments and variations, "resonator RC1" to "resonator RC6" correspond to the "first resonator" to "sixth resonator" of the present invention, respectively.

[0244] The embodiments disclosed herein should be considered illustrative rather than limiting in all respects. The scope of the invention is defined not by the description of the above embodiments but by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims.

[0245] Explanation of reference numerals in the attached figures

[0246] 10…Communication device; 12…Antenna; 20…High-frequency front-end circuit; 22, 28…Bandpass filter; 24…Amplifier; 26…Attenuator; 30…Mixer; 32…Local oscillator; 40…D / A converter; 50…RF circuit; 100, 100A~100N, 100P, 100Q, 100X…Filtering device; 110, 110D~110N, 110P, 110Q, 110X…Main body; 111…Upper surface; 112…Lower surface; C1~C6, C12, C13, C24, C34, C35, C46, ​​C56…Capacitor; DM…Directional mark; GND…Ground terminal; L1~ L6, L34~L36…Inductors; LY1~LY6, LY11~LY17, LY21~LY26, LY31~LY37, LY41~LY47, LY51~LY60, LY71~LY80…Dielectric layers; N1A~N6A, N1B~N6B…Connection nodes; P1~P6, P12, P13, P24, P34…Capacitor electrodes; P34, P35, P46, P56, PA1~PA3, PC1, PC1G1, PC1G2, PC1M, PC1X, PC2, PC2G1, PC2G2, PC2M, PC2X, PC10N, PC10N1 PC11~PC13, PC11N, PC11N1, PC20N, PC20N1, PC21~PC23, PC21N, PC21N1, PC34, PC34A~PC34C, PC34F, PC34K~PC34M, PC34X, PC50, PC51, PC56K, PC56L, PCD, PCI, PCJ, PT1, PT2, PT11~PT14…plate electrode; PG…ground electrode; RC1~RC6, RC1X~RC4X…resonator; T1…input terminal; T2…output terminal; V10~V12, V10G1, V10G2, V… 10I1, V10I2, V10N, V10X, V11E, V11X, V12E, V20, V20G1, V20G2, V20I1, V20I2, V20N, V20X, V21, V21E, V21X, V30, V30X, V31E, V31, V31D, V31E, V31F1, V31F2, V31I~V31K, V31X, V35L, V40, V40X, V50, V51L, V60, VC11, VC12, VC21, VC22, VG, VG1, VG2, VT10, VT11, VT20, VT21… vias.

Claims

1. A filtering device, comprising: main body; Input terminals; Output terminals; Grounding terminal; and Multiple resonators are configured in the main body and are electromagnetically coupled to each other. The plurality of resonators includes: A first resonator is connected to the input terminal; A second resonator, connected to the output terminal, is disposed adjacent to the first resonator in a first direction; A third resonator is disposed adjacent to the first resonator in a second direction orthogonal to the first direction; as well as A fourth resonator is disposed adjacent to the third resonator in the first direction. In the third and fourth resonators, a portion of the path connected to the ground terminal is shared. Each of the plurality of resonators comprises: Flat plate electrode; The first through hole has one end connected to the plate electrode and the other end connected to the ground terminal via a capacitor; as well as The second through-hole is connected at one end to the flat plate electrode and at the other end to the grounding terminal. The second via of the third resonator is shared with the second via of the fourth resonator.

2. The filtering device according to claim 1, wherein, The planar electrode of the third resonator and the planar electrode of the fourth resonator include a first portion integrally formed as a strip electrode extending along the first direction. The first through-hole of the third resonator is connected to the first end of the first part. The first through-hole of the fourth resonator is connected to the second end of the first part. The shared second via of the third resonator and the fourth resonator is connected between the first end and the second end of the first portion.

3. The filtering device according to claim 2, wherein, The main body is stacked with multiple dielectric layers, and the planar electrodes of the third resonator and the fourth resonator are located on the same dielectric layer as the planar electrodes of the first resonator and the second resonator.

4. The filtering device according to claim 2, wherein, The shared second via is offset at a position different from the position where the first portion is configured on the main body.

5. The filtering device according to claim 1, wherein, The planar electrode of the third resonator and the planar electrode of the fourth resonator comprise: The first part is integrally formed as a strip electrode extending along the first direction; as well as The second part protrudes from the central portion of the first part along the first direction toward the second direction towards the first resonator side. The first through-hole of the third resonator is connected to the first end of the first part. The first through-hole of the fourth resonator is connected to the second end of the first part. The shared second via of the third resonator and the fourth resonator is connected to the second part.

6. The filtering device according to claim 1, wherein, The planar electrode of the third resonator and the planar electrode of the fourth resonator comprise: The first part is integrally formed as a strip electrode extending along the first direction; The second part protrudes from the central portion of the first part along the first direction toward the second direction toward the first resonator side; The third part protrudes from the first end of the first part in the same direction as the second part; as well as The fourth part protrudes from the second end of the first part in the same direction as the second part. The first through-hole of the third resonator is connected to the third part. The first through-hole of the fourth resonator is connected to the fourth part. The shared second via of the third resonator and the fourth resonator is connected to the second part.

7. The filtering device according to claim 6, wherein, The first resonator is disposed in the region enclosed by the first portion, the second portion, and the third portion. The second resonator is disposed in the region enclosed by the first part, the second part and the fourth part.

8. The filtering device according to claim 1, wherein, The planar electrode of the third resonator and the planar electrode of the fourth resonator comprise: The first part is integrally formed as a strip electrode extending along the first direction; The second part protrudes from the central portion of the first part along the first direction toward the second direction toward the first resonator side; The fifth part protrudes from the first end of the first part in a direction opposite to that of the second part; as well as The sixth part protrudes from the second end of the first part in a direction opposite to that of the second part. The first through-hole of the third resonator is connected to the fifth part. The first through-hole of the fourth resonator is connected to the sixth part. The shared second via of the third resonator and the fourth resonator is connected to the second part.

9. The filtering device according to any one of claims 1 to 8, wherein, The second via of the first resonator and the second via of the second resonator are shared with the second via of the third resonator and the second via of the fourth resonator.

10. The filtering device according to claim 9, wherein, The second via of the first resonator and the second via of the second resonator are shared with the second via of the third resonator and the second via of the fourth resonator at positions different from those of the plate electrodes disposed on the main body.

11. The filtering device according to any one of claims 1 to 8, wherein, The planar electrodes in the first and second resonators are coils with the normal direction of the main body as the winding direction.

12. The filtering device according to any one of claims 1 to 8, wherein, The planar electrodes in the first and second resonators are coils with a winding direction orthogonal to the normal direction of the main body.

13. The filtering device according to any one of claims 1 to 8, wherein, The plurality of resonators further include: The fifth resonator is arranged adjacent to the third resonator in the second direction; as well as The sixth resonator is arranged adjacent to the fifth resonator in the first direction. In the third, fourth, fifth, and sixth resonators, a portion of the path connected to the grounding terminal is shared.

14. The filtering device according to any one of claims 1 to 8, wherein, The filtering device is a bandpass filter that allows signals of a specific frequency band to pass through.

15. A high-frequency front-end circuit, wherein, The high-frequency front-end circuit includes the filtering device as described in any one of claims 1 to 14.

Images