A f pad corrosion treatment process

By using the F PAD etching process, which combines adhesive and negative adhesive protection with dry and wet etching techniques, the problem of Pad surface corrosion has been solved. This enables multiple cleaning and recycling of Pads, avoids wafer scrapping, and reduces production costs.

CN115910751BActive Publication Date: 2025-11-07ZHEJIANG MDK OPTICAL SEMICONDUCTOR CO LTD
View PDF 1 Cites 0 Cited by

Patent Information

Application Number
CN202211316791.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-10-26
Publication Date
2025-11-07
Estimated Expiration
2042-10-26

AI Technical Summary

Technical Problem

In the current wafer fabrication process, residual fluorine on the pad surface combines with water molecules to form fluorine compounds, which leads to corrosion, affects subsequent testing and packaging, and causes the wafer to be scrapped.

Method used

An F PAD etching process is employed, which includes using adhesive to wrap the etched protrusions, negative adhesive patterning protection, and a combination of dry and wet etching methods to gradually remove the etched protrusions and residues, avoiding damage to the PAD surface and thickness reduction.

Benefits of technology

It effectively removes corrosive foreign matter from the Pad surface, protects the effective area of ​​the Pad, does not reduce the thickness of the Pad, enables multiple repeated cleaning, reduces product scrap, and lowers costs.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN115910751B_ABST
    Figure CN115910751B_ABST
Patent Text Reader

Abstract

The application discloses a kind of F PAD corrosion treatment process.The application only handles PAD surface protruding corrosion impurities, will not cause PAD surface damage, will not reduce PAD thickness, and effective area is effectively protected.Compared with the popular use of EKC cleaning method to remove F PAD internationally, it is removed by continuously reducing the thickness of PAD.The application process can be repeated multiple times until completely removed, while EKC cleaning can only be cleaned 1-2 times before it cannot be performed again due to PAD thickness issues.The application process repairs products that cannot be used after original process confirmation corrosion, reducing product scrap and greatly saving costs.
Need to check novelty before this filing date? Find Prior Art

Description

TECHNICAL FIELD

[0001] The present application relates to the field of wafer surface processing, in particular to PAD regeneration processing, and more particularly to a F PAD corrosion processing technology. BACKGROUND

[0002] In the wafer manufacturing process, the existing Pad is usually subjected to pad open using carbon tetrafluoride or octafluorocarbon, and then EKC is used to remove the fluorine residues on the pad. Even after EKC cleaning, there will be some fluorine elements remaining on the wafer, which will combine with water molecules and other elements in the storage environment after long-term storage to generate fluorine compounds on the pad surface, causing pad corrosion and affecting the subsequent testing and packaging, resulting in wafer scrap. SUMMARY

[0003] To solve the above technical problems, the present application designs a F PAD corrosion processing technology, which aims to repair and reuse the products that cannot be used after customer confirmation of corrosion.

[0004] The present application adopts the following technical scheme:

[0005] A F PAD corrosion processing technology, the process steps of which are as follows:

[0006] S1, wrapping the F PAD corrosion protrusions on the corrosion surface of the PAD with glue, and standing and drying;

[0007] S2, using negative glue to make the PAD patterned after the coating exposure process, so that the effective area is in a protected state;

[0008] S3, using dry etching to etch away the corrosion protrusions above the PAD together with the glue;

[0009] S4, using wet etching to clean the negative glue protective layer and the residual particles on the PAD surface, and removing water vapor by baking;

[0010] S5, using dry etching to etch away the remaining glue together, and using wet etching to strip again;

[0011] S6, after cleaning, baking to remove water vapor, and finally performing appearance inspection, and completing the entire F PAD corrosion processing technology after the appearance inspection passes.

[0012] As a preferred, the standing and drying process in step S1 takes 30-90 minutes, and the standing and drying temperature is 200-250℃.

[0013] As a preferred, the glue in step S1 is a non-photosensitive glue that can withstand high-temperature baking of 250℃.

[0014] As preferred, in step S2, the coating and exposing process of the negative photoresist is as follows:

[0015] A1, coating negative photoresist on the pad open mask;

[0016] A2, exposing the negative photoresist by using photolithography process, and the photolithography pattern is determined according to the mask design; the negative photoresist in the pattern area exposed by UV light forms a substance which is not easy to dissolve in the developer, while the negative photoresist in the pattern area not exposed by UV light is easy to dissolve in the developer;

[0017] A3, after the photolithography, the photoresist in the pattern area easy to dissolve in the developer is removed by the developer, so as to make the PAD patterned and the effective area in the protection state.

[0018] As preferred, in step S4, the baking time is 15-60 min, and the baking temperature is 100-150℃.

[0019] As preferred, in step S6, the baking time is 15-60 min, and the baking temperature is 100-150℃.

[0020] The beneficial effects of the present application are as follows: the present application only processes the PAD surface protruding corrosion foreign matter, does not cause damage to the PAD surface, does not reduce the PAD thickness, and effectively protects the effective area. In comparison, the internationally popular EKC cleaning method removes the F PAD by continuously reducing the PAD thickness. The present application process can be repeated multiple times until completely removed, while the EKC cleaning can only be cleaned 1-2 times and then cannot be performed again due to the PAD thickness problem. The present application process repairs the products which cannot be used after the original process confirms corrosion, and reuses the products, reduces the product scrap, and greatly saves the cost. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is a schematic diagram of the PAD corrosion treatment according to the present application;

[0022] Figure 2 is a schematic diagram of another PAD corrosion treatment according to the present application; DETAILED DESCRIPTION

[0023] The technical solutions of the present application will be further described in detail below by specific embodiments and in combination with the drawings:

[0024] Embodiment: an F PAD corrosion treatment process, and the process steps are as follows:

[0025] S1, wrapping the F PAD corrosion protrusions on the corrosion surface of the PAD with glue, and standing and drying;

[0026] S2, after using negative glue through coating, exposure and development process, the PAD is patterned, and the effective area is in a protection state;

[0027] S3, the etching protrusions above the PAD are etched away together with the glue by using dry etching method again;

[0028] S4, the negative glue protection layer and the residual particles on the surface of the PAD are cleaned by using wet etching method again, and water vapor is removed through baking;

[0029] S5, the remaining glue is etched away together by using dry etching method again, and wet etching method is used again for stripping;

[0030] S6, after cleaning, baking is performed to remove water vapor, and finally appearance inspection is performed, and the whole FPAD etching process is completed after the appearance inspection is passed.

[0031] The standing and drying time in step S1 is 30-90 min, and the standing and drying temperature is 200-250 DEG C.

[0032] The glue in step S1 is non-photosensitive and resistant to 250 DEG C high temperature baking.

[0033] In step S2, the coating, exposure and development process of the negative glue is as follows:

[0034] A1, the negative glue is coated according to the pad open mask;

[0035] A2, the negative glue is exposed by using photolithography process, and the photolithography pattern is designed according to the mask; the negative glue in the pattern area exposed by UV light forms a substance which is not easy to dissolve in the developing solution, and the negative glue in the pattern area not exposed by UV light is easy to dissolve in the developing solution;

[0036] A3, after photolithography, the developing solution is developed to remove the photolithography glue in the pattern area which is easy to dissolve in the developing solution, so that the PAD is patterned, and the effective area is in a protection state.

[0037] In step S4, the baking time is 15-60 min, and the baking temperature is 100-150 DEG C.

[0038] In step S6, the baking time is 15-60 min, and the baking temperature is 100-150 DEG C.

[0039] The present application only deals with the protruding corrosive foreign matters on the surface of the PAD, does not cause damage to the surface of the PAD, does not reduce the thickness of the PAD, and effectively protects the effective area. In contrast, the internationally popular EKC cleaning method removes the F PAD by continuously reducing the thickness of the PAD. The present application process can be repeated multiple times until completely removed, while the EKC cleaning can only be cleaned 1-2 times and cannot be performed again due to the thickness of the PAD.

[0040] As shown in Figure 1 and Figure 2 By comparing the PAD corrosion treatment before and after the process of the present application, it can be seen that the present application process can completely remove the F PAD corrosion protrusions, repair the products that cannot be used after corrosion according to the original process, and reduce the product scrap, greatly saving the cost.

[0041] The above-described embodiments are only a preferred scheme of the present application, and do not limit the present application in any form. Other variations and modifications can be made without exceeding the technical solutions described in the claims.

Claims

1. An F-PAD etch process characterized by, The process steps are: S1, use glue to wrap the F PAD corrosion protrusions on the corrosion surface of the PAD, and stand and dry; S2, use negative glue to pass the coating exposure process, let the PAD be patterned, and the effective area is in a protected state; S3, use dry etching method to etch the corrosion protrusions above the PAD and the glue together; S4, use wet etching method to clean the negative glue protective layer and the residual particles on the surface of the PAD, and remove water vapor by baking; S5, use dry etching method to etch the remaining glue together, and use wet etching method again to strip; S6, after cleaning, bake to remove water vapor, and finally perform appearance inspection, and the whole F PAD corrosion processing process is completed after the appearance inspection is passed; The glue in step S1 is non-photosensitive and resistant to 250℃ high temperature baking.

2. The F-PAD etch process of claim 1, wherein, The standing and drying time in step S1 is 30-90min, and the standing and drying temperature is 200-250℃.

3. The F-PAD etch process of claim 1, wherein, In step S2, the coating exposure process of the negative glue is: A1, coat the negative glue corresponding to the pad open mask; A2, use photolithography process to expose the negative glue, and the photolithography pattern is determined according to the mask design; The negative glue in the pattern area exposed by UV light will form a substance that is not easy to dissolve in the developer, and the negative glue in the pattern area not exposed by UV light is easy to dissolve in the developer; A3, after photolithography, develop the photoresist in the pattern area easy to dissolve in the developer to remove it, let the PAD be patterned, and the effective area is in a protected state.

4. The F-PAD etch process of claim 1, wherein, In step S4, the baking time is 15-60min, and the baking temperature is 100-150℃.

5. The F-PAD etch process of claim 1, wherein, In step S6, the baking time is 15-60min, and the baking temperature is 100-150℃.

Citation Information

Patent Citations

  • Method for reducing PI glue silk residues

    CN113703292A