Liquid memristor and preparation method thereof

Abstract

The present application relates to the technical field of information storage and computing, and particularly relates to a liquid memristor and a preparation method thereof, wherein the liquid memristor is a device composed of a metal electrode placed in a capillary tube containing an ionic solution; and the ionic solution is an imidazole ionic solution. The liquid memristor of the present application limits the ionic solution to be an imidazole ionic solution, and the imidazole ionic solution has the characteristics of high conductivity, low cost and chemical stability, and can be used in a soft resistance memory to improve the stability, durability and time retention characteristics of the fluid memristor device, so that the prepared memristor is more similar to a biological synapse in structure and function, and can effectively promote the research on neural networks and brain-like research based on the plasticity of synapses.

Description

Technical Field

[0001] This invention relates to the field of information storage and computing technology, and in particular to a liquid memristor and its preparation method. Background Technology

[0002] Traditional digital circuit components, such as transistors and capacitors, were once used in the bionic design of neural synapses. Although they could successfully simulate some functions of synapses and the nervous system, the bulky system did not have the characteristics of high integration, low power consumption, and high efficiency of neuromorphic systems. Moreover, the complex fabrication process and high power consumption posed a huge challenge to device integration.

[0003] Memristors possess a simple stacked structure and low power consumption. They can switch between high and low conduction states, making them suitable for constructing resistive random access memory (RRAM) for non-volatile information storage and computation. The smooth transition between high and low conduction states in memristor devices is beneficial for simulating neural synapse computation. Furthermore, the resistance transition effect of memristors can occur within a few nanometers, facilitating multi-dimensional and high-density integration of devices. A common memristor is a two-terminal device with a metal / dielectric layer / metal structure. Currently, many studies use a solid-state dielectric material as the intermediate dielectric. However, the fabrication process of solid-state memristors is complex and costly. Moreover, the physical mechanism of solid-state memristors mainly focuses on the formation and control of electric field-induced ionic conductive filaments. The problem is that the position and direction of filament growth are random, and the migration and degradation processes are uneven, resulting in a non-smooth electrical response (e.g., abrupt changes, fluctuations, and non-uniformity). This clearly contradicts the smooth, gradual change in synaptic weights in biological synapses and their positive correlation with the input signal, thus causing significant interference in the simulation of neural synapses.

[0004] Memristors with a fluid intermediate medium are complex to manufacture, costly, and have poor stability, durability, and time retention characteristics. Summary of the Invention

[0005] This invention provides a liquid memristor and its preparation method, which solves the problems of complex preparation process, high cost, poor stability, poor durability and time retention characteristics of existing memristors.

[0006] The present invention provides a liquid memristor, which is a device consisting of a metal electrode inserted into a capillary tube containing an ionic solution; the ionic solution is an imidazole ionic solution.

[0007] Ionic solutions are salts that are liquid at or near room temperature and consist entirely of cations and anions. Optionally, in imidazole ionic solutions, the cations include 1-alkylimidazolium, 1-alkyl-3-methylimidazolium, and 1-alkyl-2,3-dimethylimidazolium, wherein the alkyl groups include: methyl, ethyl, propyl, butyl, pentyl, hexyl, octyl, decyl, dodecyl, tetradecyl, hexadecyl, octadecyl, etc., and the cations include: chlorine, bromine, iodine, tetrafluoroboric acid, hexafluorophosphate, acetic acid, bis(trifluoromethanesulfonyl)imide, nitric acid, perchloric acid, hydrogen sulfate, dihydrogen phosphate, trifluoromethanesulfonic acid, trifluoroacetic acid, p-toluenesulfonic acid, etc.

[0008] Capillary tubes are generally made of insulating materials. Preferably, capillary tubes are made of quartz.

[0009] In the above-described scheme, the liquid memristor of the present invention is a device constructed by placing metal electrodes into a capillary tube containing an ionic solution. The capillary tube, as the container for the ionic solution, is small in size and has strong adsorption properties. The liquid memristor is prepared simply by inserting one end of the capillary tube into the ionic liquid for adsorption, followed by placing metal electrodes at both ends of the capillary tube after adsorption is complete. The preparation method is simple and low in cost. Furthermore, the adsorption properties of the capillary tube ensure that the ionic liquid inside the liquid memristor does not easily leak out when used horizontally, improving the stability of the liquid memristor. When pressure is applied to the positive and negative metal electrodes, ions in the ionic solution migrate between the positive and negative metal electrodes. This ion migration causes a change in resistance, thereby realizing the function of a neural synapse. This invention specifies that the ionic solution is an imidazole-based ionic solution. These ionic liquids possess high conductivity, low cost, and chemical stability, making them suitable for use in soft-resistive memories to improve the stability, durability, and time retention characteristics of fluid memristor devices. This allows the fabricated memristors to more closely resemble biological neural synapses in structure and function, effectively promoting research on neural networks and brain-like devices based on synaptic plasticity. The liquid memristor of this invention can stably cycle 160 times, possesses memristor functionality, and can be well-suited for neural synapse simulation. Furthermore, some raw materials are recyclable, and the ionic liquid is a green solution, making it environmentally friendly. Therefore, the liquid memristor offers advantages such as high efficiency, environmental friendliness, convenient fabrication, and high stability.

[0010] In one possible design, the imidazole ionic solution is selected from salt solutions of 1,3-dimethylimidazolium compounds.

[0011] In one possible design, the salt solution of the 1,3-dimethylimidazolium compound is a 1,3-dimethylimidazolium chloride solution or a 1,3-dimethylimidazolium nitrate solution.

[0012] In the above scheme, by specifically limiting the type of imidazole ionic solution, the prepared memristor is structurally and functionally closer to biological neural synapses, which can more effectively promote neural network research and brain-like research based on synaptic plasticity.

[0013] In one possible design, the metal electrode includes a first metal electrode and a second metal electrode, wherein the first metal electrode is inserted into one end of the capillary that has absorbed the ion solution, and the second metal electrode is inserted into the other end of the capillary that has absorbed the ion solution.

[0014] The first metal electrode and the second metal electrode are spaced apart in the capillary; the space is greater than or equal to 1 mm and less than or equal to 20 mm.

[0015] Optionally, the spacing can be 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm, or 20mm, etc. It should be noted that the spacing will vary depending on the imidazole ion solution used.

[0016] In the above scheme, by limiting the distance between the first metal electrode and the second metal electrode formed in the capillary to a reasonable range, the operational stability of the liquid memristor can be improved.

[0017] In one possible design, the spacing is greater than or equal to 1 mm and less than or equal to 5 mm.

[0018] In one possible design, the concentration of the ionic solution is 0.1 mol / L to 0.5 mol / L.

[0019] Optionally, the concentration of the ionic solution can be 0.1 mol / L, 0.2 mol / L, 0.3 mol / L, 0.4 mol / L, or 0.5 mol / L, etc.

[0020] In the above scheme, by limiting the concentration of the ion solution within a reasonable range, the prepared liquid memristor has better stability, durability and time retention characteristics.

[0021] In one possible design, the metal electrode comprises any one of copper, aluminum, gold, silver, molybdenum, niobium, palladium, platinum, tantalum, ruthenium, or tungsten.

[0022] In one possible design, the inner diameter of the capillary is 10 micrometers to 300 micrometers; the diameter of the metal electrode is 10 micrometers to 300 micrometers.

[0023] Optionally, the inner diameter of the capillary can be 10 micrometers, 20 micrometers, 30 micrometers, 40 micrometers, 50 micrometers, 60 micrometers, 70 micrometers, 80 micrometers, 90 micrometers, 100 micrometers, 150 micrometers, 200 micrometers, 250 micrometers, or 300 micrometers. The diameter of the metal electrode can be 10 micrometers, 20 micrometers, 30 micrometers, 40 micrometers, 50 micrometers, 60 micrometers, 70 micrometers, 80 micrometers, 90 micrometers, 100 micrometers, 150 micrometers, 200 micrometers, 250 micrometers, or 300 micrometers.

[0024] In the above scheme, by selecting a capillary with a suitable inner diameter, the capillary can better hold the ionic liquid. When the inner diameter of the capillary is less than 10 micrometers, its ability to adsorb ionic liquid is insufficient, resulting in a decrease in the performance of the liquid memristor. When the inner diameter of the capillary is greater than 300 micrometers, ionic liquid leakage may occur when the capillary is laid flat, thus reducing the stability of the liquid memristor. By selecting metal electrodes of appropriate size, the conductivity of the liquid memristor can be guaranteed.

[0025] The present invention also provides a method for preparing the above-mentioned liquid memristor, comprising the following steps:

[0026] Step S1: Prepare the ionic solution;

[0027] Step S2: Immerse one end of the capillary in the ionic solution, so that the ionic solution automatically enters the capillary;

[0028] Step S3: Fix the capillary tube containing the ionic solution onto the glass substrate; insert the first metal electrode and the second metal electrode from both ends of the capillary tube into the capillary tube containing the ionic solution.

[0029] In the above scheme, the method for preparing the liquid memristor of the present invention first prepares an ionic solution, then immerses one end of a capillary in the ionic solution, allowing the ionic solution to automatically enter the capillary, and then fixes the capillary containing the ionic solution on a glass substrate; finally, the first and second metal electrodes are inserted from both ends of the capillary into the capillary containing the ionic solution. The preparation method is simple, and a large number of devices under the same conditions can be prepared in a short time, which improves efficiency and avoids wasting a lot of manpower and resources. Moreover, the materials used, such as the capillary, ionic liquid, metal electrodes and glass substrate, are all low-cost materials, resulting in low manufacturing cost.

[0030] In one possible design, the specific process of preparing the ion solution in step S1 is as follows: at room temperature, the ion salt is added to a certain amount of deionized water, stirred evenly, and then transferred to a volumetric flask to make up to a final volume to obtain the ion solution. Then, the ion solution is subjected to ultrasonic vibration treatment.

[0031] In the above scheme, the homogeneity of the ionic liquid can be effectively improved by using ultrasound to oscillate the ionic liquid during the preparation of the ionic solution, thereby improving the memristor performance of the liquid memristor.

[0032] This invention provides a liquid memristor using an imidazole-based ionic solution. Imidazole-based ionic solutions are characterized by high conductivity, low cost, and chemical stability, and can be used in soft resistive memories to improve the stability, durability, and time retention characteristics of fluid memristor devices. This allows the fabricated memristor to more closely resemble biological neural synapses in structure and function, effectively promoting research on neural networks and brain-like devices based on synaptic plasticity. The liquid memristor of this invention uses a capillary tube as the container for the ionic solution. Its small size and strong adsorption properties allow for simple fabrication. The liquid memristor is prepared by simply inserting one end of the capillary tube into the ionic liquid for adsorption, followed by placing metal electrodes at both ends of the capillary tube. The fabrication method is simple and low-cost. Furthermore, the capillary adsorption ensures that the internal ionic liquid does not easily leak out when the liquid memristor is used horizontally, improving its stability.

[0033] The present invention provides a simple method for fabricating a liquid memristor, which can produce a large number of devices under the same conditions in a short time, thereby improving efficiency and avoiding the waste of a lot of manpower and resources. Moreover, the materials used, such as capillary tubes, ionic liquids, metal electrodes and glass substrates, are all low-cost materials. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0035] Figure 1 This is a schematic diagram of the operation of the liquid memristor in Embodiment 1 of the present invention;

[0036] Figure 2 These are test graphs of the liquid memristors of Embodiments 1, 2 and 3 of the present invention under a periodic voltage of -2V to 2V.

[0037] Figure 3 These are test graphs of the liquid memristors of Embodiments 1 and 4-6 of the present invention under a periodic voltage of -2V to 2V.

[0038] Figure 4 These are test graphs of the liquid memristor performance of Embodiment 1 of the present invention under different cycle voltages;

[0039] Figure 5 This is the IV curve of the liquid memristor of Embodiment 1 of the present invention under a periodic voltage of -2V to -2V;

[0040] Figure 6 This is a diagram showing the current and voltage response of the liquid memristor of Embodiment 1 of the present invention under pulse stimulation under different conditions;

[0041] Figure 7 This is a diagram showing the current response of the liquid memristor of Embodiment 1 of the present invention under a pulse width of 10ms.

[0042] Figure 8 These are IV curves obtained by the liquid memristors of Embodiments 7-9 of the present invention under a periodic pressure of -1V to -1V.

[0043] Figure 9 This is an IV curve obtained by the liquid memristor of Embodiment 9 of the present invention under different periodic voltages;

[0044] Figure 10 These are IV curves obtained by the liquid memristors of Embodiments 9-12 of the present invention under a periodic pressure of -1V to -1V.

[0045] Figure 11 This is the IV curve obtained from the liquid memristor in Embodiment 9 of the present invention;

[0046] Figure 12 This is a diagram showing the current and voltage response of the liquid memristor of Embodiment 9 of the present invention under pulse stimulation under different conditions;

[0047] Figure 13 This describes the current response of the liquid memristor in Embodiment 9 of the present invention with a pulse width of 10ms. Detailed Implementation

[0048] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0049] Example 1

[0050] A liquid memristor is a device consisting of a metal electrode inserted into a capillary tube containing an ionic solution; wherein the inner diameter of the capillary tube is 100 micrometers; and the ionic solution is a 1,3-dimethylimidazolium chloride solution with a concentration of 0.5 mol / L.

[0051] The metal electrode includes a first metal electrode and a second metal electrode. The first metal electrode is inserted into one end of the capillary tube containing the ion solution, and the second metal electrode is inserted into the other end of the capillary tube containing the ion solution. The first and second metal electrodes are spaced 5 mm apart within the capillary tube. Both the first and second metal electrodes are Cu electrodes with a diameter of 50 micrometers.

[0052] The above-mentioned method for fabricating liquid memristors includes the following steps:

[0053] Step S1: At room temperature, add 1,3-dimethylimidazolium chloride to a certain amount of deionized water, stir well, transfer to a volumetric flask and make up to volume to obtain an ionic solution. Then, use ultrasound to shake the ionic solution for 10 minutes and set aside.

[0054] Step S2: Immerse one end of the capillary in the ionic solution, allowing the ionic solution to automatically enter the capillary.

[0055] Step S3: Fix the capillary tube containing the ionic solution onto the glass substrate; insert the first metal electrode and the second metal electrode from both ends of the capillary tube into the capillary tube containing the ionic solution, so that the first metal electrode and the second metal electrode are spaced apart in the capillary tube.

[0056] The above schematic diagram of the liquid memristor is shown below. Figure 1 As shown.

[0057] Example 2

[0058] The difference from Example 1 is that the concentration of the ion solution is 0.01 mol / L.

[0059] Example 3

[0060] The difference from Example 1 is that the concentration of the ion solution is 0.1 mol / L.

[0061] Example 4

[0062] The difference from Example 1 is that the ion solution concentration is such that the spacing is 2 mm.

[0063] Example 5

[0064] The difference from Example 1 is that the ion solution concentration is such that the spacing is 10 mm.

[0065] Example 6

[0066] The difference from Example 1 is that the ion solution concentration is such that the spacing is 20 mm.

[0067] Experimental Example 1

[0068] 1.1 Effect of Ion Solution Concentration on Liquid Memristors

[0069] The liquid memristors of Examples 1, 2, and 3 were subjected to a periodic voltage of -2V to 2V to test their memristor performance.

[0070] As Figure 2 The experimental results shown indicate that, as Figure 2 As shown in (a), when the concentration is 0.01 mol / L, the liquid memristor does not exhibit memristor performance because the concentration is too low. Figure 2 As shown in (b), as the concentration of the ionic liquid increases to 0.1 mol / L, the liquid memristor exhibits memristor characteristics, and the on / off ratio increases. Figure 2 As shown in (c), the liquid memristor exhibits good stability when the ionic liquid concentration is 0.5 mol / L.

[0071] 1.2 The effect of spacing on liquid memristors

[0072] The memristor performance of the liquid memristors in Examples 1 and 4-6 was tested by applying a periodic voltage of -2V to -2V.

[0073] As Figure 3 The experimental results shown indicate that, as Figure 3 (a) and Figure 3 As shown in (b), the hysteresis performance IV curve of the liquid memristor becomes more pronounced as the electrode spacing increases from 2 mm to 5 mm, indicating that the liquid memristor has a large switching ratio. Simultaneously, the performance stability shows a general trend of improvement. However, as... Figure 3 (c) and Figure 3 As shown in (d), when the electrode spacing is further increased to 10 mm and 20 mm, the hysteresis loop is significantly reduced. Simultaneously, the operational stability of the liquid memristor begins to weaken. This indicates that the liquid memristor with the first and second metal electrodes spaced at 5 mm in the capillary exhibits superior performance.

[0074] 1.3 Effect of Applied Pressure on the Performance of Liquid Memristors

[0075] Performance tests were conducted on the liquid memristor of Example 1 by applying different periodic voltages. Figure 4 The effect of applying different periodic voltages between the two electrodes is shown, where the number of IV cycles is 200. It can be observed that the applied voltage has little effect on the stability of the cycle, as the last hysteresis loop almost coincides with the first hysteresis loop, even when the scan bias is increased from 1V to 4V. However, when the applied voltage is as follows... Figure 4 (a) too small or as Figure 4(d) is too high, and the IV curve of the liquid memristor exhibits a small hysteresis loop, indicating that the difference between the high-resistance and low-resistance states is too small to be useful. Clearly, the liquid memristor of this invention exhibits a significant IV hysteresis loop, but also demonstrates good stability and retention characteristics when a 2V voltage is applied. Figure 4 (c) is shown.

[0076] 1.4 Performance Testing

[0077] The performance of the liquid memristor of Example 1 was investigated at room temperature using a Keithley 4200-SCS.

[0078] Figure 5 The IV curves of the liquid memristor in Example 1 were obtained under a periodic pressure of -2V to -2V. It can be seen that the liquid memristor has excellent stability, durability and time retention characteristics.

[0079] Figure 6 The current and voltage responses of the liquid memristor in Example 1 under pulse stimulation under different conditions are shown. Figure 6 (a) and Figure 6 (b) shows the triangular pulse response of the liquid memristor in Example 1 in the positive and negative voltage regions, respectively. Figure 6 (c) shows the plasticity of the liquid memristor in Example 1 under rectangular pulse stimulation with pulse durations of 2ms, 4ms, 8ms and 10ms. The longer the pulse voltage duration, the greater the rate of change of current. Figure 6 (d) shows the current response of the liquid memristor of Example 1 at voltage amplitudes of 2V, 1.4V, 1V and 0.8V. It can be seen that the higher the pulse voltage amplitude, the greater the rate of change of current, that is, the stronger the change of synaptic weight, which is very similar to the learning progress of the human brain.

[0080] Figure 7 (a) is a graph showing the current response of the liquid memristor in Example 1 under a pulse width of 10ms; Figure 7 (b) is the current response diagram of the liquid memristor of Example 1 under the conditions of a pulse width of 10 ms and a read pulse amplitude of 2V (Δt = 1s) and 1.4V (Δt = 0.2s) in the positive voltage region. Figure 7 It can be seen that when the stimulus is interrupted for a period of time or the polarity changes, the liquid memristor returns to its initial state. Under continuous stimulation, the liquid memristor exhibits typical habitual behavior. This learning method can be used for adaptation, avoiding unnecessary waste and improving learning efficiency.

[0081] Example 7

[0082] The difference from Example 1 is that the ionic solution is a 1,3-dimethylimidazolium nitrate solution, the first metal electrode is a Cu electrode, the second metal electrode is an Ag electrode, and the spacing is 1 mm.

[0083] Example 8

[0084] The difference from Example 7 is that the first metal electrode is an Ag electrode and the second metal electrode is a Cu electrode.

[0085] Example 9

[0086] The difference from Example 7 is that the first metal electrode is an Ag electrode and the second metal electrode is an Ag electrode.

[0087] Example 10

[0088] The difference from Example 9 is that the spacing is 2mm.

[0089] Example 11

[0090] The difference from Example 9 is that the spacing is 5mm.

[0091] Example 12

[0092] The difference from Example 9 is that the spacing is 10mm.

[0093] Experimental Example 2

[0094] 1.1 The Influence of Metal Electrodes on the Performance of Liquid Memristors

[0095] like Figure 8 The IV curves of the liquid memristors in Examples 7-9 are obtained under a periodic pressure of -1V to -1V. Comparing the three sets of examples, it is found that when the first metal electrode and the second metal electrode are the same, the symmetry of the liquid memristor is very good, and the performance stability shows a general trend of improvement.

[0096] 1.2 Effect of Applied Pressure on the Performance of Liquid Memristors

[0097] The memristor performance IV curves obtained by applying different periodic voltages to the liquid memristor of Example 9 are shown below. Figure 9 As shown. By Figure 9 The results show that the memristor performance (IV curve) of the liquid memristor increases with voltage from 0.5V to 6V, and the hysteresis loop changes from an initially indistinct shape (…). Figure 9 (a) to have a large switching ratio ( Figure 9 (b)), after which the switching ratio gradually decreases. Figure 9(c), 9(d), 9(e), 9(f)), while the performance of the liquid memristor gradually stabilizes. At an applied voltage of 1V, the liquid memristor exhibits the optimal switching ratio and excellent stability, with the best hold time.

[0098] 1.3 The effect of spacing on liquid memristors

[0099] like Figure 10 The above are IV curves obtained for the liquid memristors of Examples 9-12 under a periodic pressure of -1V to -1V. Figure 10 The results show that as the electrode spacing increases, the IV curve of the liquid memristor's memristor performance gradually decreases and becomes very unstable from the initial high switching ratio. The stability of the liquid memristor gradually weakens from its initial extreme stability. When the Ag-Ag electrode is used, the applied voltage is 1V, and the electrode distance is 1mm, the liquid memristor has the best switching ratio and good stability, as well as the best holding time and good stability.

[0100] 1.4 Performance Testing

[0101] The performance of the liquid memristor of Example 9 was investigated at room temperature using a Keithley 4200-SCS.

[0102] Figure 11 The IV curve obtained from the liquid memristor in Example 9 shows that the liquid memristor has excellent stability, durability, and time retention characteristics.

[0103] Figure 12 The current and voltage response of the liquid memristor of Example 9 under pulse stimulation under different conditions is shown. Figure 12 (a) and Figure 12 (b) is a triangular pulse response diagram of the liquid memristor of Example 9 in the positive voltage region and the negative voltage region, respectively. Figure 12 (c) is a graph showing the plasticity test of the liquid memristor of Example 9 under rectangular pulse stimulation. The pulse duration is 2ms, 4ms, 8ms and 10ms. The longer the pulse voltage duration, the greater the rate of change of current. Figure 12 (d) shows the current changes of the liquid memristor in Example 9 under pulse voltage amplitudes of 2V, 1.5V, 1V and 0.6V. It can be seen that the higher the pulse voltage amplitude, the greater the rate of current change, that is, the stronger the change in synaptic weight, which is very similar to the learning progress of the human brain.

[0104] Figure 13 This shows the current response of the liquid memristor of Example 9 with a pulse width of 10 ms. Figure 13It can be seen that when the stimulus is interrupted for a period of time or the polarity changes, the liquid memristor returns to its initial state. Under continuous stimulation, the liquid memristor exhibits typical habitual behavior. This learning method can be used for adaptation, avoiding unnecessary waste and improving learning efficiency.

[0105] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A liquid memristor, characterized by, The liquid memristor is a device composed of a metal electrode placed in a capillary tube containing an ionic solution; the ionic solution is an imidazole ionic solution; The metal electrode includes a first metal electrode and a second metal electrode, the first metal electrode is placed in one end of the capillary tube containing the ionic solution, and the second metal electrode is placed in the other end of the capillary tube containing the ionic solution; The first metal electrode and the second metal electrode have a spacing in the capillary tube; the spacing is greater than or equal to 1 mm and less than or equal to 20 mm.

2. The liquid memristor of claim 1, wherein, The imidazole ionic solution is selected from a salt solution of a 1,3-dimethyl imidazole compound.

3. The liquid memristor of claim 2, wherein, The salt solution of the 1,3-dimethyl imidazole compound is a 1,3-dimethyl imidazole chloride salt solution or a 1,3-dimethyl imidazole nitrate salt solution.

4. The liquid memristor of claim 1, wherein, The spacing is greater than or equal to 1 mm and less than or equal to 5 mm.

5. The liquid memristor of claim 1, wherein, The concentration of the ionic solution is 0.1 mol / L-0.5 mol / L.

6. The liquid memristor of claim 1, wherein, The metal electrode includes any one of copper, aluminum, gold, silver, molybdenum, niobium, palladium, platinum, tantalum, ruthenium or tungsten.

7. The liquid memristor of claim 1, wherein, The inner diameter of the capillary tube is 10 microns-300 microns; the diameter of the metal electrode is 10 microns-300 microns.

8. The method of claim 1-7, wherein the liquid memristor is prepared by, The method includes the following steps: Step S1: configuring an ionic solution; Step S2: immersing one end of a capillary tube in the ionic solution, so that the ionic solution automatically enters the capillary tube; Step S3: fixing the capillary tube containing the ionic solution on a glass substrate; and immersing the first metal electrode and the second metal electrode of the metal electrode into the capillary tube containing the ionic solution from both ends of the capillary tube.

9. The method of claim 8, wherein the liquid memristor is prepared by, In the step S1, the specific process of configuring the ionic solution is as follows: at room temperature, add ionic salt to a certain amount of deionized water, stir uniformly, then transfer to a volumetric flask for constant volume to obtain an ionic solution, and then use ultrasonic vibration to treat the ionic solution.

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