Semiconductor device module and method of manufacturing the same

Abstract

Provided are a device (20) disposed on the surface of an organic substrate (10), a heat sink (40) bonded and fixed to the surface of the device (20), and a molded resin (50) sealing the device (20) in a manner that at least one side of the heat sink (40) is exposed. The heat sink (40) includes a first portion (40a) and a second portion (40b) that are portions having different material hardnesses. The heat sink (40) has a gradient in hardness from the first portion (40a) on the side exposed from the molded resin (50) to the second portion (40b) on the side bonded to the device (20). The first portion (40a) is harder in material than the second portion (40b), and good grindability of a grinding wheel is maintained.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor device module and a manufacturing method thereof. BACKGROUND

[0002] In the existing semiconductor device module, as a high frequency product countermeasure hybrid module in which a plurality of chip components and devices are mounted on an organic substrate and sealed with a molded resin material, a configuration in which a metal heat dissipation block having high thermal conductivity is built-in for dissipating heat from the devices to the outside of the module during operation of the devices is known.

[0003] The heat dissipation block can efficiently dissipate heat from the devices to the outside of the module by contacting one side to the devices that generate heat and exposing the other side on the surface of the module. Therefore, after mounting a plurality of devices on an organic substrate, the heat dissipation block is adhered to the devices, and the molded resin sealing is performed, but dimensional tolerances such as the thickness of the devices, the height after mounting the devices, the height of the heat dissipation block, the thickness of the heat dissipation block adhesion material, and the like, and the deviation of the finished state overlap, and it is difficult to align the heights of the plurality of heat dissipation blocks with high precision. Therefore, when the mold is closed for molded resin sealing using a metal mold, the metal mold can contact the heat dissipation block, and the devices can be damaged.

[0004] In order to prevent damage to the devices, there is a method in which the height of the heat dissipation block is reduced so that the heat dissipation block does not contact the metal mold, and the sealing is performed in such a manner that the heat dissipation block is buried in the molded resin, and then the surface of the molded resin is ground with a grinding wheel such as a diamond grinding wheel to expose the heat dissipation block (for example, refer to Patent Literature 1).

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2012-174711 (paragraph 0033, Figure 1 )

[0006] However, when the surface of the molded resin is ground, the heat dissipation block is soft, and therefore the pores of the grinding wheel are clogged, the grindability is reduced, and there is a problem in that quality defects such as burrs on the heat dissipation block or defects in the molded resin are easily caused. In addition, in order to prevent a reduction in grindability, a dressing operation to remove the clogging of the pores of the grinding wheel needs to be frequently performed, and there is a problem in that the productivity is reduced. SUMMARY

[0007] The present application discloses a technology for solving the problems as described above, and aims to provide a semiconductor device module and a manufacturing method that can prevent quality defects caused by clogging of the pores of a grinding wheel when a heat dissipation block buried in a molded resin is ground with a diamond grinding wheel or the like, and can improve productivity.

[0008] The semiconductor device module disclosed in the present application is characterized by including: a device provided on a surface of a substrate; a heat dissipation block provided on a surface of the device; and a molded resin sealing the device in a manner that at least one surface of the heat dissipation block is exposed, the heat dissipation block including two portions having different hardnesses.

[0009] Further, the semiconductor device module disclosed in the present application is characterized by including: a device and a dummy block provided on a surface of a substrate; a heat dissipation block provided on a surface of the device; and a molded resin sealing the device in a manner that at least one surface of the heat dissipation block is exposed, the dummy block having a height from the substrate equal to a height of the heat dissipation block from the substrate, and the dummy block having a material harder than a material of the heat dissipation block.

[0010] The manufacturing method of the semiconductor device module disclosed in the present application is characterized by including: a step of mounting a device on a surface of a substrate; a step of fixing a heat dissipation block on a surface of the device; a step of sealing the device having the heat dissipation block fixed on the surface with a molded resin; and a step of grinding the molded resin until at least one surface of the heat dissipation block is exposed, the heat dissipation block including two portions having different hardnesses.

[0011] Further, the manufacturing method of the semiconductor device module disclosed in the present application is characterized by including: a step of mounting a device on a surface of a substrate; a step of fixing a heat dissipation block on a surface of the device; a step of forming a dummy block on a surface of the substrate; a step of sealing the device having the heat dissipation block fixed on the surface with a molded resin; and a step of grinding the molded resin until at least one surface of the heat dissipation block is exposed, the dummy block having a height from the substrate equal to or higher than a height of the heat dissipation block from the substrate, and the dummy block having a material harder than a material of the heat dissipation block.

[0012] Further, the manufacturing method of the semiconductor device module disclosed in the present application is characterized by including: a step of mounting a device on a surface of a substrate; a step of fixing a heat dissipation block on a surface of the device; a step of forming a dummy block on a cutting line of the surface of the substrate; a step of sealing the device having the heat dissipation block fixed on the surface with a molded resin; and a step of grinding the molded resin until at least one surface of the heat dissipation block is exposed, the dummy block having a height from the substrate equal to or higher than a height of the heat dissipation block from the substrate, and the dummy block having a material harder than a material of the heat dissipation block.

[0013] According to the present application, it is possible to maintain good grindability of the grinding wheel, and to obtain effects of stable quality and improved productivity. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1(a) and (b) in FIG. 1 are a perspective view and a sectional view showing the structure of a main part of the semiconductor device module according to Embodiment 1.

[0015] Figure 2 is a perspective view showing the overall structure of the semiconductor device module according to Embodiment 1.

[0016] Figure 3 (a) to (d) in FIG. 1 are perspective views of the semiconductor device module according to Embodiment 1 in each process of a manufacturing process thereof.

[0017] Figure 4 is a flowchart showing the manufacturing process of the semiconductor device module according to Embodiment 1.

[0018] Figure 5 (a) and (b) in FIG. 2 are a perspective view and a sectional view showing the structure of a main part of the semiconductor device module according to Embodiment 2.

[0019] Figure 6 (a) and (b) in FIG. 3 are a perspective view and a sectional view showing the structure of a main part of the semiconductor device module according to Embodiment 3.

[0020] Figure 7 (a) and (b) in FIG. 3 are a perspective view and a sectional view showing another structure of a main part of the semiconductor device module according to Embodiment 3.

[0021] Figure 8 (a) and (b) in FIG. 4 are a perspective view and a sectional view showing the structure of a main part of the semiconductor device module according to Embodiment 4.

[0022] Figure 9 (a) and (b) in FIG. 4 are a perspective view and a sectional view showing another structure of a main part of the semiconductor device module according to Embodiment 4.

[0023] Figure 10 (a) and (b) in FIG. 5 are a perspective view and a sectional view showing the structure of a main part of the semiconductor device module according to Embodiment 5.

[0024] Figure 11 (a) and (b) in FIG. 6 are a perspective view and a sectional view showing the structure of a main part of the semiconductor device module according to Embodiment 6.

[0025] Figure 12 is a plan view showing the structure of the semiconductor device module according to Embodiment 7.

[0026] Figure 13(a) and (b) in FIG. 1 are a plan view and a sectional view showing the structure of the semiconductor device module according to Embodiment 8. DETAILED DESCRIPTION

[0027] Embodiment 1

[0028] Figure 1 (a) and (b) in FIG. 1 are a plan view and a sectional view showing the structure of the semiconductor device module according to Embodiment 8. Figure 1 (a) in FIG. 1 is a perspective view, Figure 1 (b) in FIG. 1 is Figure 1 (a) in FIG. 1 is a AA sectional view. Figure 2 is a perspective view showing the overall structure of the semiconductor device module.

[0029] As shown in Figure 2 , the semiconductor device module 101 is composed of an organic substrate 10, a device 20 and a chip component 30 provided on the surface of the organic substrate 10, a heat sink 40 provided in contact with the surface of the device 20, and a molding resin 50 sealing the device 20 and the chip component 30 in such a manner that the surface of the heat sink 40 is exposed. As shown in Figure 1 (a) and (b) in FIG. 1, the main part of the semiconductor device module 101 according to Embodiment 1 is composed of the heat sink 40 and the device 20.

[0030] The heat sink 40 has a first portion 40a on the module exposure side which is composed of an oxygen-free copper alloy, is hard in material, and is good in grindability, and a second portion 40b on the device contact side which is composed of an oxygen-free copper which is good in thermal conductivity, and is soft in material. The metal composition of the heat sink 40 has a gradient change from the first portion 40a on the side exposed from the molding resin 50 to the second portion 40b on the side in contact with the device 20.

[0031] Thus, the heat dissipation from the device is not impaired, and the diamond grinding wheel is not clogged with holes, and is not damaged with burrs and defects in the molding resin, and the diamond grinding wheel does not need to be frequently dressed.

[0032] Next, the manufacturing method of the semiconductor device module 101 according to Embodiment 1 will be described based on Figure 3 (a) to (d) in FIG. 2 and Figure 4 Figure 3 (a) to (d) in FIG. 2 are views showing each process of the manufacturing process of the semiconductor device module 101 according to Embodiment 1. Figure 4 is a flowchart showing the order of the manufacturing method of the semiconductor device module 101 according to Embodiment 1.

[0033] First, as shown in​Figure 3 (a) of FIG. 10, after the solder paste is applied to the surface of the organic substrate 10 by the solder printing process (step S401), the chip component 30 and the device 20 are mounted on the organic substrate 10 by the mounting process (step S402).

[0034] Next, after the chip component 30 and the device 20 are mounted on the organic substrate 10, the organic substrate on which the chip component 30 and the device 20 are mounted is cleaned by the reflow / cleaning process (step S403).

[0035] Next, as shown in (b) of FIG. 10, the heat sink 40 is mounted on the device 20 with the adhesive interposed therebetween by the die bonding / curing process (step S404), and is fixed by performing heat treatment. Figure 3 Next, as shown in (c) of FIG. 10, after the chip component 30 and the device 20 on the organic substrate 10 are sealed with the molding resin 50 by the sealing process (step S405), the organic substrate 10 is singulated into individual modules by the singulation process (step S406).

[0036] Figure 3 Finally, as shown in (d) of FIG. 10, after the surface of the molding resin 50 is ground by the grinding process (step S407) to expose the heat sink 40, electromagnetic shielding is performed as necessary by the electromagnetic shielding process (step S408) to complete the process.

[0037] Finally, as shown in (d) of FIG. 10, after the surface of the molding resin 50 is ground by the grinding process (step S407) to expose the heat sink 40, electromagnetic shielding is performed as necessary by the electromagnetic shielding process (step S408) to complete the process. Figure 3

[0038] ​​As described above, according to the semiconductor device module 101 according to Embodiment 1, the device 20 is provided on the surface of the organic substrate 10, the heat dissipation block 40 is adhered and fixed to the surface of the device 20, and the molding resin 50 seals the device 20 in a manner that at least one surface of the heat dissipation block 40 is exposed, the heat dissipation block 40 includes the first portion 40a and the second portion 40b which are portions having different hardnesses of material, the material of the heat dissipation block 40 has a gradient from the first portion 40a on the side exposed from the molding resin 50 to the second portion 40b on the side adhered to the device 20, the first portion 40a is harder than the second portion 40b, and according to the manufacturing method of the semiconductor device module 101 according to Embodiment 1, the device 20 is mounted on the surface of the organic substrate 10, the heat dissipation block 40 is fixed to the surface of the device 20, the device 20 on which the heat dissipation block 40 is fixed on the surface is sealed with the molding resin 50, and the molding resin 50 is ground until at least one surface of the heat dissipation block 40 is exposed, the heat dissipation block 40 includes two portions having different hardnesses of material, the heat dissipation block 40 has a gradient in hardness (degree of hardness) from the first portion 40a on the side exposed from the molding resin 50 to the second portion 40b on the side in contact with the device 20, the first portion 40a is harder than the second portion 40b, and thus the heat dissipation from the device is not impaired, the grinding of the portion having a hard material does not cause clogging of the diamond grinding wheel, and thus the grinding performance of the grinding wheel can be maintained. In addition, quality defects such as burrs and defects of the molding resin do not occur, and the diamond grinding wheel does not need to be frequently dressed, and thus a stable quality and an improved productivity can be achieved.

[0039] Embodiment 2

[0040] In Embodiment 1, the material of the first portion 40a and the second portion 40b of the heat dissipation block 40 has a gradient, but in Embodiment 2, a case in which the portions are alternately overlapped is described.

[0041] Figure 5 (a) and (b) of FIG. 1 are views that show the structure of the main part of the semiconductor device module according to Embodiment 2 of the present application. Figure 5 (a) of FIG. 1 is a perspective view, Figure 5 (b) of FIG. 1 is Figure 5 the AA-directional cross-sectional view of (a) of FIG. 1.

[0042] As Figure 5As shown in (a) and (b) of FIG. 10, the heat sink 40 according to Embodiment 2 of the present application is in a form in which the first portion 40a, which is hard and has good grindability of the diamond grinding wheel, and the second portion 40b, which is soft and has good thermal conductivity, are alternately overlaid in parallel with the surface of the device 20. The other structures and the manufacturing method of the semiconductor device module according to Embodiment 2 are the same as those of the semiconductor device module 101 according to Embodiment 1, and the same reference numerals are given to the corresponding portions and the description thereof is omitted.

[0043] Thus, since the soft portion and the hard portion are simultaneously ground, the grindability of the grinding wheel can be maintained by performing dressing (self-sharpening) of the grinding wheel when the hard portion is ground. In addition, it is also possible to expose the material having good thermal conductivity to the surface of the module, and it is also possible to ensure the heat dissipation of the device.

[0044] As described above, according to the semiconductor device module according to Embodiment 2 of the present application, since the heat sink 40 is formed so that the two first portions 40a and the second portion 40b, which differ in hardness of the material, are alternately overlaid in parallel with the surface of the device 20, the grindability of the grinding wheel can be ensured by simultaneously grinding the soft portion and the hard portion and performing dressing (self-sharpening) of the grinding wheel when the hard portion is ground. In addition, it is also possible to expose the material having good thermal conductivity to the surface of the module, and it is also possible to ensure the heat dissipation of the device.

[0045] Embodiment 3

[0046] In Embodiment 2, the two portions of the heat sink 40, which differ in hardness of the material, are alternately overlaid, but in Embodiment 3, a case in which the heat sink 40 is provided in a cylindrical shape is described.

[0047] Figure 6 (a) and (b) of FIG. 10 are views showing the structure of the main portion of the semiconductor device module according to Embodiment 3 of the present application. Figure 6 (a) of FIG. 10 is a perspective view, Figure 6 (b) of FIG. 10 is Figure 6 (a) of FIG. 10 is an AA-directional cross-sectional view of (a) of FIG. 10.

[0048] As Figure 6 As shown in (a) and (b) of FIG. 10, the heat sink 40 according to Embodiment 3 of the present application is in a form in which the second portion 40b, which is soft and has good thermal conductivity, is formed in a cylindrical shape and the first portion 40a, which is hard and has good grindability of the diamond grinding wheel, is inserted therein. The other structures and the manufacturing method of the semiconductor device module according to Embodiment 3 are the same as those of the semiconductor device module 101 according to Embodiment 1, and the same reference numerals are given to the corresponding portions and the description thereof is omitted.

[0049] Thus, since the soft portion and the hard portion are ground at the same time, the dressing (self-dressing) of the grindstone is performed when the hard portion is ground, so that the grindability of the grindstone can be maintained. In addition, it is also possible to expose the material having a high thermal conductivity to the surface of the module, and it is also possible to ensure the heat dissipation property of the device.

[0050] As described above, according to the semiconductor device module according to Embodiment 3, the heat dissipation block 40 is formed such that the second portion 40b is formed in a cylindrical shape in a direction perpendicular to the surface of the device 20, and the first portion 40a is formed inside the cylindrical shape of the second portion 40b, and the first portion 40a is harder than the second portion 40b, so that by simultaneously grinding the soft portion and the hard portion, the dressing (self-dressing) of the grindstone is performed when the hard portion is ground, so that the grindability of the grindstone can be maintained. In addition, it is also possible to expose the material having a high thermal conductivity to the surface of the module, and it is also possible to ensure the heat dissipation property of the device.

[0051] Further, in Embodiment 3, the portion in a cylindrical shape is formed as the second portion 40b which is soft, but is not limited thereto. Figure 7 (a) and (b) of FIG. 10 are views showing other structures of the main portion of the semiconductor device module according to Embodiment 3 of the present application. Figure 7 (a) of FIG. 10 is a perspective view, Figure 7 (b) of FIG. 10 is Figure 7 the AA-directional cross-sectional view of (a) of FIG. 10. As Figure 7 As shown in (a) and (b) of FIG. 10, the heat dissipation block 40 can also be formed such that the portion in a cylindrical shape is formed as the first portion 40a which is hard, and the second portion 40b which is soft is formed inside the cylindrical shape of the first portion 40a. In this case, the same effects as those of Embodiment 3 described above can also be obtained.

[0052] Embodiment 4

[0053] In Embodiment 3, the second portion 40b of the heat dissipation block 40 is formed in a cylindrical shape, but in Embodiment 4, a case where the heat dissipation block 40 is formed in a lattice shape is described.

[0054] Figure 8 (a) and (b) of FIG. 11 are views showing the structure of the main portion of the semiconductor device module according to Embodiment 4 of the present application. Figure 8 (a) of FIG. 11 is a perspective view, Figure 8 (b) of FIG. 11 is Figure 8 the AA-directional cross-sectional view of (a) of FIG. 11.

[0055] As Figure 8As shown in (a) and (b) of FIG. 10, the heat sink 40 according to Embodiment 4 is formed in a state in which the soft second portion 40b is formed in a lattice shape and the hard first portion 40a having good grindability is inserted in the inside of the lattice shape. The other structures and the manufacturing method of the semiconductor device module according to Embodiment 4 are the same as those of the semiconductor device module 101 according to Embodiment 1, and the same reference numerals are given to the corresponding portions and the description thereof is omitted.

[0056] Thus, since the soft portion and the hard portion are simultaneously ground, the grindability of the grindstone can be maintained by performing dressing (self-sharpening) of the grindstone when the hard portion is ground. In addition, it is also possible to expose the material having good thermal conductivity to the surface of the module, and it is also possible to ensure the heat dissipation of the device.

[0057] As described above, according to the semiconductor device module according to Embodiment 4, the heat sink 40 is formed in a state in which the second portion 40b is formed in a lattice shape in a direction perpendicular to the surface of the device 20, and the first portion 40a is formed in the inside of the lattice shape of the second portion 40b, and the first portion 40a is harder than the second portion 40b. Thus, by simultaneously grinding the soft portion and the hard portion, the grindability of the grindstone can be maintained by performing dressing (self-sharpening) of the grindstone when the hard portion is ground. In addition, it is also possible to expose the material having good thermal conductivity to the surface of the module, and it is also possible to ensure the heat dissipation of the device.

[0058] Further, in Embodiment 4, although the portion in the lattice shape is provided as the second portion 40b which is soft, the present application is not limited thereto. Figure 9 (a) and (b) of FIG. 10 are views showing other structures of the main portion of the semiconductor device module according to Embodiment 4 of the present application. Figure 9 (a) of FIG. 10 is a perspective view, Figure 9 (b) of FIG. 10 is Figure 9 (a) of FIG. 10 is an AA-directional cross-sectional view. As Figure 9 As shown in (a) and (b) of FIG. 10, the heat sink 40 can also be formed in a state in which the portion in the lattice shape is formed as the first portion 40a which is hard, and the second portion 40b which is soft is formed in the inside of the lattice shape of the first portion 40a. In this case, the same effects as those of Embodiment 4 described above can also be obtained.

[0059] Embodiment 5

[0060] In Embodiment 4, although the second portion 40b of the heat sink 40 is formed in a lattice shape, in Embodiment 5, a case in which plating is performed will be described.

[0061] Figure 10 (a) and (b) of FIG. 11 are views showing the structure of the main portion of the semiconductor device module according to Embodiment 5 of the present application.Figure 10 (a) in the figure is a stereogram. Figure 10 (b) in the Figure 10 Cross-sectional view taken along the AA line in (a).

[0062] like Figure 10 As shown in (a) and (b) of FIG. 1 , the heat sink 40 according to the fifth embodiment of the present application is configured such that a first portion 40a, which is hard and has good grinding properties with a diamond grinding wheel, is formed by plating on the surface of a second portion 40b, which has high thermal conductivity and is soft. The semiconductor device module according to the fifth embodiment is otherwise identical in structure and manufacturing method to the semiconductor device module 101 according to the first embodiment. Corresponding parts are denoted by the same reference numerals, and their descriptions are omitted.

[0063] This allows the grinding wheel to be sharpened (self-sharpened) by grinding away the hardened areas, maintaining its abrasiveness. Furthermore, after grinding, the plated portion of the exposed surface of the heat sink block is removed, exposing the material with excellent thermal conductivity to the module surface, further ensuring heat dissipation from the device.

[0064] As described above, according to the method for manufacturing a semiconductor device module according to the fifth embodiment, the heat sink block 40 is formed by plating the side surfaces and surface of the second portion 40b fixed to the surface of the device 20. The first portion 40a is made of a harder material than the second portion 40b. During the grinding process, the first portion 40a on the surface of the heat sink block 40 is removed. Therefore, the grinding wheel is sharpened (self-sharpening) by grinding away the hard portion, thereby maintaining the grinding performance of the grinding wheel. Furthermore, after grinding is completed, the plated portion of the exposed surface of the heat sink block is removed by grinding, exposing the material with high thermal conductivity to the module surface, thereby ensuring heat dissipation from the device.

[0065] Implementation Method 6

[0066] In the fifth embodiment, the first portion 40a is plated on the surface of the second portion 40b of the heat dissipation block 40. However, in the sixth embodiment, a case where a hard portion is formed on the upper end of the heat dissipation block will be described.

[0067] Figure 11 (a) and (b) are diagrams showing the structure of a main portion of a semiconductor device module according to a sixth embodiment of the present application. Figure 11 (a) in the figure is a stereogram. Figure 11 (b) in the Figure 11 Cross-sectional view taken along the AA line in (a).

[0068] like Figure 11In the case of (a) and (b) in FIG. 6, the heat sink 40 according to Embodiment 6 is formed in a manner that the first portion 40a, which is hard and has good grindability of a diamond grinding wheel, is overlaid on the upper portion of the second portion 40b, which is soft and has good thermal conductivity. The other structure and the manufacturing method of the semiconductor device module according to Embodiment 6 are the same as those of the semiconductor device module 101 according to Embodiment 1, and the same reference numerals are given to the corresponding portions and the description thereof is omitted.

[0069] Thus, the grindability of the grinding wheel is maintained by performing self-sharpening of the grinding wheel by grinding the hard portion. In addition, after the grinding is completed, the hard material on the surface of the heat sink is ground away without remaining to be exposed to the surface of the module, and thus the heat dissipation of the device can also be ensured.

[0070] As described above, according to the manufacturing method of the semiconductor device module according to Embodiment 6, the heat sink 40 is formed in a manner that the first portion 40a is formed on the surface of the second portion 40b provided on the surface of the device 20, the first portion 40a is harder than the second portion 40b, and the first portion 40a on the surface of the heat sink 40 is removed in the grinding step. Thus, the grindability of the grinding wheel is maintained by performing self-sharpening of the grinding wheel by grinding the hard portion. In addition, after the grinding is completed, the hard material on the surface of the heat sink is ground away without remaining to be exposed to the surface of the module, and thus the heat dissipation of the device can also be ensured.

[0071] Embodiment 7

[0072] In Embodiment 6, the first portion 40a is formed on the surface of the second portion 40b, but in Embodiment 7, a case where a dummy block is formed is described.

[0073] Figure 12 is a plan view showing the structure of the semiconductor device module according to Embodiment 7 of the present application (molding resin is not shown). As shown in FIG. 7, the semiconductor device module 102 according to Embodiment 7 of the present application is formed in a manner that the dummy block 41, which is equal in height to the heat sink 40 from the organic substrate 10 and is hard and has good grindability of a diamond grinding wheel, is arranged at the four corners of the module and in the region on the organic substrate 10 where no device and chip component is mounted. The other structure and the manufacturing method of the semiconductor device module 102 according to Embodiment 7 are the same as those of the semiconductor device module 101 according to Embodiment 1, and the same reference numerals are given to the corresponding portions and the description thereof is omitted. Figure 12

[0074] ​Thus, since soft material and hard material are ground at the same time, the dressing (self-dressing) of the grindstone is performed when the hard portion is ground, so that the grindability of the grindstone can be maintained. In addition, by exposing the heat dissipation block having a high thermal conductivity to the surface of the module, the heat dissipation property of the device can also be ensured. In addition, the heat dissipation block can be used in the existing form.

[0075] As described above, according to the semiconductor device module 102 according to Embodiment 7, the device 20 and the dummy block 41 are provided on the surface of the organic substrate 10, the heat dissipation block 40 is adhered and fixed to the surface of the device 20, and the molding resin 50 seals the device 20 with at least one surface of the heat dissipation block 40 exposed, the height of the dummy block 41 from the organic substrate 10 is equal to that of the heat dissipation block 40, and the material is harder than that of the heat dissipation block 40. In addition, according to the manufacturing method of the semiconductor device module 102 according to Embodiment 7, the device 20 is mounted on the surface of the organic substrate 10, the heat dissipation block 40 is fixed to the surface of the device 20, the dummy block 41 is formed on the surface of the organic substrate 10, the device 20 on which the heat dissipation block 40 is fixed to the surface is sealed with the molding resin 50, and the molding resin 50 is ground until at least one surface of the heat dissipation block 40 is exposed. The height of the dummy block 41 from the organic substrate 10 is equal to or higher than that of the heat dissipation block 40, and the material is harder than that of the heat dissipation block 40. Thus, since soft material and hard material are ground at the same time, the dressing (self-dressing) of the grindstone is performed when the hard portion is ground, so that the grindability of the grindstone can be maintained. In addition, by exposing the heat dissipation block having a high thermal conductivity to the surface of the module, the heat dissipation property of the device can also be ensured. In addition, the heat dissipation block can be used in the existing form.

[0076] Further, in Embodiments 1 to 7, although the grinding process (step S407 of Figure 4 is performed after the cutting and singulation process (step S406 of Figure 4 ), it is not limited thereto. The cutting and singulation process (step S406 of Figure 4 ) can be performed after the grinding process (step S407 of Figure 4 ). In these cases, the effects described in each embodiment can be obtained, respectively.

[0077] Embodiment 8

[0078] In Embodiment 7, the dummy block is provided on the surface of the organic substrate 10, but in Embodiment 8, a case where the dummy block is formed on a margin portion for cutting when singulated is described.

[0079] Figure 13 (a) and (b) in FIG. are diagrams (molding resin is not illustrated) showing the structure of the semiconductor device module according to Embodiment 8 of the present application, and are the semiconductor device module before singulation.Figure 13 (a) is a plan view, Figure 13 (b) is Figure 13 (a) is a BB cross-sectional view.

[0080] As shown in (a) and (b) of Figure 13 In the embodiment 8, the semiconductor device module 103 is configured to have a dummy block 42 having a height equivalent to that of the heat dissipation block 40 and being hard and having good grindability of the diamond grinding wheel, on the cutting line (cutting region) of the organic substrate 10 before singulation. The other structures of the semiconductor device module according to the embodiment 8 are the same as those of the semiconductor device module 101 according to the embodiment 1, and the same reference numerals are given to the corresponding parts and the description thereof is omitted.

[0081] The cutting singulation process (step S406 of Figure 4 is performed after the grinding process (step S407 of Figure 4 The manufacturing method of the semiconductor device module 103 according to the embodiment 8 is the same as that of the semiconductor device module 101 according to the embodiment 1, except that the cutting singulation process (step S406 of

[0082] Thus, since the soft material and the hard material are ground at the same time, the grinding wheel is sharpened (self-sharpened) when the hard part is ground, so that the grindability of the grinding wheel can be maintained. In addition, by exposing the heat dissipation block having good thermal conductivity to the surface of the module, the heat dissipation property of the device can also be ensured. In addition, the heat dissipation block can be used in the existing form, and there is no need to ensure the space for arranging the dummy heat dissipation block having good grindability in the module.

[0083] As described above, according to the manufacturing method of the semiconductor device module 103 according to the embodiment 8, the process of mounting the device 20 on the surface of the organic substrate 10, the process of fixing the heat dissipation block 40 on the surface of the device 20, the process of forming the dummy block 42 on the cutting line of the surface of the organic substrate 10, the process of sealing the device 20 having the heat dissipation block 40 fixed on the surface with the molding resin 50, and the process of grinding the molding resin 50 until at least one side of the heat dissipation block 40 is exposed, the dummy block 42 is formed to have a height equivalent to or higher than that of the heat dissipation block 40 and to be harder than the heat dissipation block 40, so that the soft material and the hard material are ground at the same time, and the grinding wheel is sharpened (self-sharpened) by grinding the hard part, so that the grindability of the grinding wheel can be maintained. In addition, by exposing the heat dissipation block having good thermal conductivity to the surface of the module, the heat dissipation property of the device can also be ensured. In addition, the heat dissipation block can be used in the existing form, and there is no need to ensure the space for arranging the dummy heat dissipation block having good grindability in the module.

[0084] The present application describes various exemplary embodiments and examples, but various features, modes, and functions described in one or more embodiments are not limited to application in the specific embodiments, but can be applied to the embodiments alone or in various combinations. Therefore, countless modifications not exemplified can be conceived within the technical scope disclosed in the present application specification. For example, cases where at least one constituent element is modified, cases where addition is made, or cases where omission is made are included, and cases where at least one constituent element is extracted and combined with constituent elements of other embodiments are included.

[0085] BRIEF DESCRIPTION OF DRAWINGS

[0086] 10...organic substrate; 20...device; 40...heat sink; 50...mold resin; 41, 42...dummy block; 101, 102, 103...semiconductor device module.

Claims

1. A semiconductor device module, characterized in that: have: A device is provided on a surface of a substrate; a heat sink disposed on a surface of the device; and a molded resin that seals the device in such a manner that at least one side of the heat sink is exposed, The heat sink includes two parts with different hardnesses, and has a gradient of hardness from a first part exposed from the mold resin to a second part in contact with the device. The material of the first part is harder than that of the second part.

2. A semiconductor device module, characterized in that: have: A device is disposed on a surface of a substrate; a heat sink disposed on a surface of the device; and a molded resin that seals the device in such a manner that at least one side of the heat sink is exposed, The heat dissipation block includes two parts made of materials with different hardness, and the two parts are alternately overlapped in a state perpendicular to the surface of the device and alternately arranged in a direction parallel to the surface of the device.

3. A semiconductor device module, characterized in that: have: A device is provided on a surface of a substrate; a heat sink disposed on a surface of the device; and a molded resin that seals the device in such a manner that at least one side of the heat sink is exposed, The heat dissipation block includes two parts with different hardnesses of materials, and the first part is formed into a cylindrical shape in a direction perpendicular to the surface of the device, and the second part is formed inside the first part. The material of the first part is harder than that of the second part.

4. A semiconductor device module, characterized in that: have: A device is provided on a surface of a substrate; a heat sink disposed on a surface of the device; and a molded resin that seals the device in such a manner that at least one side of the heat sink is exposed, The heat dissipation block includes two parts with different hardnesses, and the second part is formed into a cylindrical shape in a direction perpendicular to the surface of the device, and a first part is formed inside the second part, and the material of the first part is harder than that of the second part.

5. A semiconductor device module, characterized in that: have: A device is provided on a surface of a substrate; a heat sink disposed on a surface of the device; and a molded resin that seals the device in such a manner that at least one side of the heat sink is exposed, The heat dissipation block includes two parts with different hardness of materials, and the first part is formed in a lattice shape in a direction perpendicular to the surface of the device, and a second part is formed inside the first part, and the material of the first part is harder than that of the second part.

6. A semiconductor device module, characterized in that: have: A device is provided on a surface of a substrate; a heat sink disposed on a surface of the device; and a molded resin that seals the device in such a manner that at least one side of the heat sink is exposed, The heat dissipation block includes two parts with different hardness of materials, and the second part is formed in a lattice shape in a direction perpendicular to the surface of the device, and a first part is formed inside the second part, and the material of the first part is harder than that of the second part.

7. A semiconductor device module, characterized in that: have: Devices and dummy blocks are arranged on the surface of the substrate; a heat sink disposed on a surface of the device; and a molded resin that seals the device in such a manner that at least one side of the heat sink is exposed, The height between the dummy block and the substrate is equal to the height between the heat dissipation block and the substrate, and the material of the dummy block is harder than that of the heat dissipation block.

8. A method for manufacturing a semiconductor device module, characterized in that: Including the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, The heat sink includes two parts with different hardnesses, and has a gradient of hardness from a first part exposed from the mold resin to a second part in contact with the device. The material of the first part is harder than that of the second part.

9. A method for manufacturing a semiconductor device module, characterized in that: The process includes the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, The heat dissipation block includes two parts of materials with different hardness, and the two parts of the materials with different hardness are alternately overlapped in a state perpendicular to the surface of the device and alternately arranged in a direction parallel to the surface of the device. The two parts of the material having different hardness are ground simultaneously.

10. A method for manufacturing a semiconductor device module, characterized in that: Including the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, The heat dissipation block includes two parts with different hardnesses of materials, and the first part is formed into a cylindrical shape in a direction perpendicular to the surface of the device, and the second part is formed inside the first part. The material of the first part is harder than that of the second part.

11. A method for manufacturing a semiconductor device module, characterized in that: The process includes the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, The heat dissipation block includes two parts with different hardness of materials, and the second part is formed into a cylindrical shape in a direction perpendicular to the surface of the device, and a first part is formed inside the cylindrical shape of the second part, and the material of the first part is harder than that of the second part.

12. A method for manufacturing a semiconductor device module, characterized in that: The process includes the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, The heat dissipation block includes two parts with different hardness of materials, and the first part is formed in a lattice shape in a direction perpendicular to the surface of the device, and a second part is formed inside the first part, and the material of the first part is harder than that of the second part.

13. A method for manufacturing a semiconductor device module, characterized in that: Including the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, The heat dissipation block includes two parts with different hardness of materials, and the second part is formed in a lattice shape in a direction perpendicular to the surface of the device, and a first part is formed inside the second part, and the material of the first part is harder than that of the second part.

14. A method for manufacturing a semiconductor device module, characterized in that: The process includes the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, The heat sink includes two parts having different hardnesses of materials, and a first part is formed by plating on the side and surface of the second part fixed to the surface of the device, wherein the material of the first part is harder than that of the second part. During the grinding process, the first part of the surface of the heat sink is removed.

15. A method for manufacturing a semiconductor device module, characterized in that: The process includes the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, The heat dissipation block includes two parts with different hardness of materials, and a first part is formed at the surface end of the second part provided on the surface of the device. The material of the first part is harder than that of the second part. During the grinding process, the first part of the surface of the heat dissipation block is removed.

16. A method for manufacturing a semiconductor device module, characterized in that: The process includes the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; forming a dummy block on the surface of the substrate; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, A height of the dummy block from the substrate is equal to or higher than a height of the heat dissipation block from the substrate, and a material of the dummy block is harder than a material of the heat dissipation block.

17. A method for manufacturing a semiconductor device module, characterized in that: The process includes the following steps: Mounting devices on the surface of a substrate; Fixing a heat sink on the surface of the device; forming dummy blocks at the cutting lines on the surface of the substrate; sealing the device with the heat sink fixed on the surface thereof with a molded resin; and Grinding the molded resin until at least one side of the heat sink is exposed, A height of the dummy block from the substrate is equal to or higher than a height of the heat dissipation block from the substrate, and a material of the dummy block is harder than a material of the heat dissipation block.

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