Crystal growth doping equipment and methods

Abstract

This invention discloses a crystal growth doping apparatus and a crystal growth doping method implemented in conjunction with the crystal growth doping apparatus. The crystal growth doping apparatus includes a crystal growth furnace and a doping device disposed within the crystal growth furnace. The doping device includes a feed pipe extending through the crystal growth furnace in an oblique insertion direction relative to a horizontal direction, a storage hood disposed within the feed pipe, and a gate tube. The feed pipe has a placement opening extending on its outer surface, and the placement opening is recessed from its edge along the oblique insertion direction to form an upper recess and a lower recess. The storage hood is detachably disposed within the gate tube, and the storage hood includes a storage tank and a handle formed on the outer surface of the storage tank. When the storage hood is disposed within the gate tube, the gate tube can isolate the placement opening from the internal space of the feed pipe. This avoids the occurrence of dopant and internal contamination of the crystal growth doping apparatus, and prevents dopant from easily impacting the placement opening during removal / placement.

Description

Technical Field

[0001] This invention relates to a crystal growth apparatus and a crystal growth method, and more particularly to a crystal growth doping apparatus and a crystal growth doping method. Background Technology

[0002] Existing silicon wafer crystal growth equipment adds a certain amount of dopant to the silicon melt during crystal growth to achieve the required resistivity of the target silicon crystal. However, most existing doping devices are operated manually by removing / placing the dopant-containing cover, which not only easily causes contamination of the quartz tube, but also has poor doping efficiency and is prone to contamination of the dopant and the internal components of the doping device.

[0003] Furthermore, because the quartz inner tube of existing doping devices is tilted relative to the crystal growth furnace, the cover is prone to impacting the opening of the doping device during removal / placement, leading to damage. Therefore, overcoming these shortcomings through improvements in doping methods and the structural design of doping devices has become one of the important issues to be addressed in this field. Summary of the Invention

[0004] The present invention provides a crystal growth doping device and a crystal growth doping method, which can effectively improve the defects that may occur in existing crystal growth doping devices and existing crystal growth doping methods.

[0005] One embodiment of the present invention discloses a crystal growth doping apparatus, comprising a crystal growth furnace and a doping device. The crystal growth furnace includes a furnace body and a crucible disposed inside the furnace body, the crucible being used to contain a molten raw material. The doping device includes: a feed pipe extending through the furnace body in an oblique insertion direction relative to a horizontal direction, and the feed pipe having a placement opening extending on its outer surface; wherein the placement opening has an upper recess and a lower recess recessed from its edge along the oblique insertion direction; a storage hood detachably disposed within the feed pipe, and the storage hood including a storage tank and a handle formed on the outer surface of the storage tank; and a gate tube disposed within the feed pipe, and the storage hood being detachably disposed within the gate tube; wherein, when the storage hood is disposed within the gate tube, the gate tube can be used to isolate the placement opening from the internal space of the feed pipe.

[0006] Preferably, the end of the feed pipe adjacent to the crucible includes a feed port and an inclined tube partially disposed inside the feed port, and the two ends of the inclined tube respectively form a flat pipe opening and an inclined pipe opening; wherein the inclined pipe opening is parallel to the molten surface of the molten raw material.

[0007] Preferably, the inclined tube opening is located adjacent to the molten surface of the molten raw material, and the vertical distance between the inclined tube opening and the molten surface is no greater than 5 mm.

[0008] Preferably, the outer diameter of the inclined tube is not greater than the inner diameter of the feed tube, and the flat tube opening is located inside the feed tube opening; wherein, when the storage cover is located inside the feed tube, the side of the storage cover that is relatively far from the handle is detachably located at the flat tube opening.

[0009] Preferably, the storage cover further includes a material inlet located corresponding to the handle and a material inlet tube recessed from the material inlet toward the interior of the storage tank. The side of the storage cover adjacent to the material inlet abuts against the flat tube opening, and the material inlet tube and the inner wall of the storage cover together form the storage tank; wherein, the material inlet is used to allow an admixture to enter the storage tank.

[0010] Preferably, the placement port of the feed tube is formed with a reduction groove located between the upper recess and the lower recess.

[0011] Preferably, one end of the gate tube body is formed with a gate tube opening, and the gate tube opening is recessed along the inclined insertion direction to form an elongated groove; wherein, the length of the elongated groove along the inclined insertion direction is not less than the length of the placement opening along the inclined insertion direction.

[0012] Preferably, the ratio of the length of the long groove along the oblique insertion direction to the length of the placement opening along the oblique insertion direction is 1.3 to 2.

[0013] Preferably, the inner side of the feed pipe also includes a latch, which can be disposed in the elongated groove, and when the storage cover is disposed in the gate pipe body, the latch engages with the end of the elongated groove that is relatively far away from the gate pipe opening.

[0014] Preferably, the doping device further includes an outer tube disposed in the furnace body along the oblique insertion direction, and the feed pipe is disposed inside the outer tube; wherein, the outer tube includes an operating tube extending along the horizontal direction, and the operating tube includes an operating port, the operating port being used to allow the material storage hood to enter the interior of the outer tube from outside the crystal growth furnace.

[0015] Preferably, the doping device further includes a take-out member, the take-out member including a first rod and a first recess formed at one end of the first rod, the first rod being positioned at a first angle to the length direction of the first rod adjacent to one end of the first recess, and the take-out member being able to enter and extend into the placement port of the feed tube from the operating tube; wherein, the take-out member is used to remove the storage cover from the feed tube and hooks and supports the handle with the first recess.

[0016] Preferably, the doping device further includes a magnetic attraction moving mechanism, which is movably mounted on the outer tube, and the feed tube is disposed and abuts against the inner side of the magnetic attraction moving mechanism; wherein the magnetic attraction moving mechanism can be used to move the feed tube.

[0017] Preferably, the magnetic attraction moving mechanism further includes an outer magnetic sleeve movably disposed on the outer surface of the outer tube, an inner magnetic sleeve movably disposed on the inner side of the outer tube, a plurality of adsorbed members movably disposed between the inner side of the outer tube and the inner magnetic sleeve, and a plurality of magnetic attracting members disposed on the side of the outer magnetic sleeve that is relatively far away from the outer surface of the outer tube, and the positions of the plurality of adsorbed members correspond to the plurality of magnetic attracting members.

[0018] Preferably, the doping device further includes a gate member, the gate member including a second rod and a second recess formed at one end of the second rod, the second rod being positioned at a second oblique angle to the length direction of the second rod at one end adjacent to the second recess, and the gate member being accessible from the operating tube port of the operating tube and detachably abutting against the port of the gate tube body at the second recess; wherein, the gate member is capable of pushing the gate tube body away from the placement port along the oblique insertion direction.

[0019] Preferably, the opening component further includes a locking portion located at the other end of the opening component, which is relatively far away from the second recess; wherein, when the opening component pushes the gate tube body away from the placement port, the locking portion can be used to lock onto the operating pipe opening of the operating pipe, so that the gate tube body remains away from the placement port.

[0020] One embodiment of the present invention discloses a crystal growth doping method, which is implemented in conjunction with a doping device disposed in a crystal growth furnace along an oblique insertion direction. The crystal growth furnace contains a crucible for holding a molten raw material. The doping device includes a feed pipe, a gate tube disposed within the feed pipe, and a storage hood detachably disposed within the gate tube. The feed pipe has a placement opening extending from its outer surface. The crystal growth doping method includes a gate opening step: a gate opening member enters the feed pipe through the placement opening and abuts against a gate opening of the gate tube, and the gate opening member pushes the gate tube along the oblique insertion direction, thereby moving the gate tube away from the placement opening of the feed pipe. Then, the gate opening member engages with the... A feed pipe; a material storage hood removal step: a removal component passes through the placement port and a handle of the material storage hood is suspended by the removal component, and the material storage hood is moved from the placement port along the inclined insertion direction to the outside of the feed pipe; a material storage step: a dopant is placed inside the material storage hood; a material storage hood placement step: the handle is suspended by the removal component, and then the material storage hood is placed into the feed pipe by the removal component; a gate closing step: the gate opening component is separated from the gate tube body, and the gate tube body is moved along the inclined insertion direction, thereby isolating the placement port from the internal space of the feed pipe; and a doping step: the feed pipe is moved so that the position of the material storage hood is adjacent to the molten raw material, thereby causing the dopant to be heated and vaporized and enter the molten raw material.

[0021] One of the beneficial effects of the present invention is that the crystal growth doping device and the crystal growth doping method provided by the present invention can avoid the problem of internal contamination of the dopant and the crystal growth doping device by means of the technical solution that "the storage cover is detachably disposed in the gate tube body; wherein, when the storage cover is disposed in the gate tube body, the gate tube body can be used to isolate the placement port from the internal space of the feed tube". It also avoids the problem that the dopant is easily hit by the placement port of the feed tube when the crystal growth doping device is taken out / placed, thereby causing damage to the feed tube.

[0022] To further understand the features and technical content of this invention, please refer to the following detailed description and drawings of this invention. However, these descriptions and drawings are only for illustrating this invention and are not intended to limit the scope of protection of this invention in any way. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of a crystal growth doping device according to an embodiment of the present invention.

[0024] Figure 2 This is a schematic diagram of a doping device according to an embodiment of the present invention.

[0025] Figure 3 This is a partially exploded schematic diagram of the doping device according to an embodiment of the present invention.

[0026] Figure 4 This is a three-dimensional schematic diagram of the operating tube according to an embodiment of the present invention.

[0027] Figure 5 This is a top view schematic diagram of the magnetic suction moving mechanism according to an embodiment of the present invention.

[0028] Figure 6 This is a cross-sectional schematic diagram of the magnetic moving mechanism according to an embodiment of the present invention.

[0029] Figure 7 This is a perspective view of a storage hood according to an embodiment of the present invention.

[0030] Figure 8 This is a perspective view of the extraction component according to an embodiment of the present invention.

[0031] Figure 9 This is a perspective view of the door opening component according to an embodiment of the present invention.

[0032] Figure 10 This is a flowchart illustrating the steps of a crystal growth doping method according to an embodiment of the present invention.

[0033] Figure 11 This is a schematic diagram illustrating the gate opening steps according to an embodiment of the present invention.

[0034] Figure 12 This is a schematic diagram illustrating the action of removing the storage cover according to an embodiment of the present invention.

[0035] Figure 13 This is a schematic diagram illustrating the gate closing step in an embodiment of the present invention.

[0036] Figure 14 This is a schematic diagram illustrating the doping steps in an embodiment of the present invention. Detailed Implementation

[0037] The following specific embodiments illustrate the implementation of the "crystal growth doping equipment and method" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, it should be stated in advance that the accompanying drawings of this invention are only simple schematic illustrations and are not depictions based on actual dimensions. In addition, if it is indicated below that a specific drawing is referenced or shown as shown in a specific drawing, it is only for emphasis in the following description, and most of the relevant content mentioned appears in that specific drawing, but it does not limit the subsequent description to refer only to that specific drawing. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention.

[0038] It should be understood that while terms such as “first,” “second,” and “third” may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another or one signal from another. Furthermore, the term “or” as used herein may, as appropriate, include any combination of one or more of the associated listed items.

[0039] Please see Figures 1 to 14 As shown, this is an embodiment of the present invention, which discloses a crystal growth doping device 100 and a crystal growth doping method S100. To facilitate understanding of the crystal growth doping method S100 of this embodiment, the structure and connection relationship of the various components of the crystal growth doping device 100 will be described first, and then the crystal growth doping method S100 will be further described.

[0040] It should be noted that the accompanying drawings and the related quantities and shapes mentioned in this embodiment are only used to specifically illustrate the implementation of the present invention in order to facilitate understanding of the content of the present invention, and are not intended to limit the scope of protection of the present invention.

[0041] like Figure 1 As shown, the crystal growth doping equipment 100 includes a crystal growth furnace 1 and a doping device 2 disposed in the crystal growth furnace 1. The crystal growth furnace 1 includes a furnace body 11 and a crucible 12 disposed inside the furnace body 11. The crucible 12 is used to contain a molten raw material 200.

[0042] It should be noted that, in this embodiment, the crystal growth furnace 1 is suitable for crystal growth manufacturing using the Czochralski process, and the crystal growth furnace 1 can also be used to prepare products such as ingots, crystal rods, or single-crystal silicon, but the present invention is not limited thereto. For example, in other embodiments of the present invention not shown, the crystal growth furnace 1 can also be suitable for crystal growth manufacturing using the Bridgman–Stockbarger technique.

[0043] like Figure 1 and Figure 12 As shown, the doping device 2 includes an outer tube 21 disposed in the furnace body 11 along an oblique insertion direction F2 inclined relative to a horizontal direction F1, a feed pipe 22 passing through the furnace body 11 along the oblique insertion direction F2, a magnetic suction moving mechanism 23 movably installed in the outer tube 21, a gate tube body 24 disposed in the feed pipe 22, a storage cover 25 detachably disposed in the feed pipe 22, a take-out component 26 detachably disposed in the furnace body 11, and a door opening component 27 detachably disposed in the furnace body 11.

[0044] Specifically, viewed from the outside to the inside of the doping device 2, the magnetic suction moving mechanism 23, the outer tube 21, the feed tube 22, the gate tube 24, and the storage cover 25 are arranged in sequence. The storage cover 25, the take-out component 26, and the door opening component 27 are detachably mounted / arranged on the outer tube 21 and other tubular components relative to the outer tube 21.

[0045] It should be noted that the angled insertion direction F2 is at an angle of 30 to 45 degrees relative to the horizontal direction F1, but the present invention is not limited to this. Simply put, the angle between the angled insertion direction F2 and the horizontal direction F1 can be adjusted according to actual needs.

[0046] For ease of explanation and understanding, the outer tube 21, the feed tube 22, the magnetic moving mechanism 23, and the gate tube 24 will be introduced in sequence, followed by the storage cover 25, the take-out component 26, and the door opening component 27.

[0047] like Figure 1 and Figure 2As shown, the outer tube 21 includes an outer tube body 211 and an operating tube 212 extending from the outer tube body 211 along the horizontal direction F1. The operating tube 212 includes an operating port 2121 and an annular protrusion 2122 disposed at the operating port, the annular protrusion being located at one end of the operating tube 212 relatively away from the outer tube body 211. The operating port 2121 allows the material storage hood 25 to enter the outer tube body 211 from outside the crystal growth furnace 1, and the annular protrusion 2122 allows the door opening member 27 to engage and detachably mount to the annular protrusion 2122.

[0048] More specifically, in this embodiment, the operating pipe 212 is a flange pipe, and a flange structure (not shown in the figure) is provided on the outer edge of the operating pipe port 2121. The annular protrusion 2122 is formed on the side of the flange that is relatively far away from the outer pipe body 211. However, the present invention is not limited to this. For example, in other embodiments of the present invention not shown, the operating pipe 212 may also be other pipe bodies (such as spiral pipes or square pipes).

[0049] like Figures 1 to 3 As shown, a portion of the feed pipe 22 is disposed inside the outer pipe 21, and a portion of the feed pipe 22 is disposed inside the furnace body 11 and located adjacent to the molten raw material 200. The feed pipe 22 includes a placement port 221 extending from its outer surface, a latch 222 formed inside the feed pipe 22, a feed pipe inlet 223 formed at one end of the feed pipe 22, and an inclined pipe 224 connected inside the feed pipe 22.

[0050] It should be noted that, as Figure 4 As shown, the placement opening 221 has a reduction groove 2211, which is connected to an upper recess 2212 and a lower recess 2213. In this embodiment, the upper recess 2212 and the lower recess 2213 are respectively semi-elliptical and semi-circular. The upper recess 2212 and the lower recess 2213 provide a relatively spacious moving space for the extraction component 26, allowing the extraction component 26 to insert the storage cover 25 from the reduction groove 2211 into the feed pipe 22 without colliding with the reduction groove 2211.

[0051] It should be noted that the placement opening 221 has an upper recess 2212 and a lower recess 2213 recessed from its edge along the oblique insertion direction F2, and the reduction groove 2211 is located between the upper recess 2212 and the lower recess 2213, but the present invention is not limited thereto. For example, in other embodiments of the present invention, the shapes of the upper recess 2212 and the lower recess 2213 can be adjusted according to actual conditions.

[0052] Furthermore, in this embodiment, the reduction groove 2211 has two rounded corners 2211a on each side along a direction perpendicular to the oblique insertion direction F2, and each rounded corner 2211a is 120 degrees to 180 degrees. The reduction groove 2211 and the two rounded corners 2211a can increase the structural strength of the feed tube 22 and effectively reduce the stress on the feed tube 22 during operation, but the invention is not limited thereto. For example, in other embodiments of the invention not shown, the reduction groove 2211 may not include multiple rounded corners 2211a.

[0053] It should be noted that, as Figure 3 and Figure 4 As shown, the latch 222 and the placement opening 221 are respectively formed on opposite sides of the feed pipe 22, and the distance between the latch 222 and the lower recess 2213 is greater than the distance between the latch 222 and the upper recess 2212. The latch 222 is used to limit the relative position between the gate pipe body 24 and the feed pipe 22.

[0054] It should be noted that, as Figures 1 to 3 As shown, the feed inlet 223 is located adjacent to the recess 2213 and the crucible 12, and a portion of the inclined tube 224 is disposed inside the feed inlet 223. The outer diameter of the inclined tube 224 is not greater than the inner diameter of the feed tube 22. The inclined tube 224 has a flat inlet 2241 and an inclined inlet 2242 formed at its two ends, with the flat inlet 2241 located inside the feed inlet 223.

[0055] Specifically, the flat inlet 2241 is located inside the feed pipe 22 and its cross-section is not parallel to the molten surface 201 of the molten raw material 200, while the inclined inlet 2242 is located outside the feed pipe 22 and its cross-section is parallel to the molten surface 201. Wherein, as... Figure 1As shown, the oblique nozzle 2242 is located adjacent to the molten surface 201, and the vertical distance L between the nozzle cross-section of the oblique nozzle 2242 and the molten surface 201 is no greater than 5 mm. Further, in this embodiment, the vertical distance L is preferably 1 mm to 5 mm, and most preferably 1 mm to 3 mm.

[0056] It should be noted that the crystal growth doping device 100 can improve the doping efficiency of the crystal doping device 100 by using the technical means that "the cross-section of the inclined tube 2242 is parallel to the molten surface 201 and the vertical distance L is not greater than 5 mm" so that the material storage cover 25 can be as close as possible to the molten surface 201 and receive more heat energy within a certain period of time.

[0057] like Figure 1 , Figures 5 to 6 As shown, the magnetic attraction moving mechanism 23 includes an outer magnetic sleeve 231 movably disposed on the outer surface of the outer tube 21, an inner magnetic sleeve 232 movably disposed on the inner side of the outer tube 21, a plurality of adsorbed members 233 movably disposed between the inner side of the outer tube 21 and the inner magnetic sleeve 232, and a plurality of magnetic attracting members 234 disposed on the side of the outer magnetic sleeve 231 relatively away from the outer surface of the outer tube 21. The positions of the plurality of adsorbed members 233 correspond to the positions of the plurality of magnetic attracting members 234, and the feed tube 22 is disposed and abuts against the inner side of the magnetic attraction moving mechanism 23.

[0058] Specifically, when the feed tube 22 is disposed inside the outer tube 21, the inner magnetic sleeve 232 surrounds a portion of the outer surface of the feed tube 22, and a plurality of adsorbed components 233 are disposed on the side of the inner magnetic sleeve 232 that is relatively away from the feed tube 22; the outer magnetic sleeve 231 covers a portion of the outer surface of the outer tube 21, and a plurality of magnetic attracting components 234 are disposed on the side of the outer magnetic sleeve 231 that is relatively away from the outer tube 21. The number of adsorbed components 233 and magnetic attracting components 234 is the same, preferably four each, and in this embodiment, the adsorbed components 233 and magnetic attracting components 234 are respectively capable of adsorbing iron and magnets.

[0059] It should be noted that the magnetic moving mechanism 23 can be used to move the feed tube 22. Specifically, the user can operate from the outside of the outer tube 21 and move the multiple magnetic components 234 to move the feed tube 22, which is covered by the inner magnetic sleeve 232, accordingly. In this way, the user can operate the feed tube 22 without turning on the crystal growth and doping equipment 100 to avoid problems such as contamination.

[0060] like Figure 3 As shown, one end of the gate tube 24 has a gate opening 241, and the gate opening 241 is recessed along the oblique insertion direction F2 to form an elongated groove 242. The length of the elongated groove 242 along the oblique insertion direction F2 is not less than the length of the placement opening 221 along the oblique insertion direction F2. In this embodiment, the length of the elongated groove 242 along the oblique insertion direction F2 is defined as a groove length 242a, and the length of the placement opening 221 along the oblique insertion direction F2 is defined as a placement opening length 221a. The ratio of the groove length 242a to the placement opening length 221a is 1.3 to 2.

[0061] More specifically, the ratio of the length of the long groove 242a to the length of the placement opening 221a can be in three ranges: 1.3 to 1.5, 1.5 to 1.8, and 1.8 to 2.0. In this embodiment, the ratio of the length of the long groove 242a to the length of the placement opening 221a is preferably 1.5 to 1.8. Therefore, even with the long groove 242a formed, the structural strength of the gate tube 24 can still be maintained to a certain extent.

[0062] It should be noted that when the gate tube 24 is disposed within the feed pipe 22, the gate tube 24 can be used to isolate the placement port 221 from the internal space of the feed pipe 22, thereby isolating the interior of the feed pipe 22 from the exterior. For example, Figure 3 As shown, the latch 222 can be set in the long groove 242, and when the material storage cover 25 is not provided in the feed pipe 22, the latch 222 is engaged with the end of the long groove 242 that is relatively far away from the gate pipe opening 241, so that the gate pipe body 24 can be kept in the same position for a long time.

[0063] The outer tube 21, the feed tube 22, the magnetic moving mechanism 23, and the gate tube 24 have been introduced so far. The storage cover 25, the take-out component 26, and the door opening component 27 will be introduced in sequence below, and the outer tube 21, the feed tube 22, the magnetic moving mechanism 23, and the gate tube 24 will be used in conjunction with the description for ease of explanation.

[0064] like Figure 7 As shown, the storage hood 25 includes a storage tank 251, a handle 252 formed on the outer surface of the storage tank 251, a dispensing port 253 positioned corresponding to the handle 252, and a dispensing tube 254 recessed from the dispensing port 253 toward the interior of the storage tank 251. The dispensing port 253 is used to allow a dopant 300 to enter the storage tank 251, and the dispensing tube 254 and the inner wall of the storage hood 25 together form the storage tank 251.

[0065] It should be noted that, as Figure 7 and Figure 14 As shown, when the storage hood 25 is disposed within the feed pipe 22 and the gate pipe 24 is engaged with the latch 222, the storage hood 25 will be detachably disposed within the gate pipe 24. Furthermore, when the storage hood 25 is disposed within the gate pipe 24, the side of the storage hood 25 furthest from the handle 252 is detachably disposed (engaged) with the flat pipe opening 2241. In other words, the side of the storage hood 25 adjacent to the material inlet 253 abuts against the flat pipe opening 2241.

[0066] It should be noted that, as Figure 1 , Figure 7 and Figure 14 As shown, in this embodiment, the dopant 300 is solid. When the storage hood 25 abuts against the flat tube opening 2241, the heat emitted by the molten raw material 200 will cause the dopant 300 to vaporize through thermal radiation and thermal conduction. The vaporized dopant 300 will overflow from the material inlet 253 and reach the molten surface 201 of the molten raw material 200 through the flat tube opening 2241 and the inclined tube opening 2242 for doping. As mentioned above, if the dopant reaching the molten surface 201 of the molten raw material 200 is solid, this solid dopant is different from the gaseous dopant 300 referred to in this embodiment, and the doping equipment using this dopant is also different from the crystal growth doping equipment 100 referred to in this embodiment.

[0067] like Figure 8 As shown, the extraction member 26 includes an extraction handle 261, a first rod 262 connected to the extraction handle 261, and a first recess 263 formed at one end of the first rod 262 relatively away from the extraction handle 261. The extraction member 26 can enter through the operating port 2121 of the operating tube 212 and further extend into the placement port 221 of the feed tube 22. The extraction member 26 can be used to remove the storage cover 25 from the feed tube 22, and the first recess 263 hooks and supports the handle 252.

[0068] It should be noted that the position of the first rod 262 adjacent to one end of the first recess 263 forms a first oblique angle θ1 with the length direction of the first rod 262. This first oblique angle is 8 to 12 degrees, and in this embodiment, the first oblique angle θ1 is preferably 10 degrees. However, the present invention is not limited to this, and the first oblique angle θ1 is not particularly limited. Specifically, the first oblique angle θ1 is located on the opposite side of the bottom surface of the first recess 263, and by means of the design of the first oblique angle θ1, the extraction member 26 can facilitate the extraction of the storage cover 25.

[0069] like Figure 9 As shown, the door opening component 27 includes a door opening handle 271, a second rod 272 connected to the door opening handle 271, a second recess 273 formed at one end of the second rod 272 relatively away from the door opening handle 271, and a locking portion 274 located at the other end of the door opening component 27, wherein the other end is relatively away from the second recess 273, and as... Figure 11 As shown, the opening member 27 can be entered through the operating pipe port 2121 of the operating pipe 212, and can be detachably abutted against the gate pipe port 241 of the gate pipe body 24 by the second recess 273. Then the opening member 27 can be used to push the gate pipe body 24 away from the placement port 221 along the oblique insertion direction F2.

[0070] It should be noted that, as Figure 9 As shown, the position of the second rod 272 is adjacent to one end of the second recess 273 and forms a second oblique angle θ2 with the length direction of the second rod 272. The second oblique angle is 13 degrees to 17 degrees, and the second oblique angle θ2 is preferably 15 degrees in this embodiment, but the present invention is not limited thereto, and the second oblique angle θ2 is not particularly limited.

[0071] It should be noted that, in this embodiment, the door opening handle 271 is annular, and the engaging portion 274 is disposed on the door opening handle 271. When the door opening member 27 pushes the gate tube 24 away from the placement port 221, the engaging portion 274 can be used to engage with the operating port 2121 of the operating tube 212, so that the gate tube 24 remains away from the placement port 221, and the first rod 262 of the extraction member 26 can pass through the door opening handle 271 to enter the placement port 221 of the feed tube 22.

[0072] The above is a description of the crystal growth doping apparatus 100 of this embodiment. The following describes the crystal growth doping method S100 implemented in conjunction with the crystal growth doping apparatus 100, but the present invention is not limited thereto. That is, the crystal growth doping method S100 of this embodiment can also be performed using other crystal growth doping apparatus. It should be noted that the content of the crystal growth doping method S100 is largely similar to that of the crystal growth doping apparatus 100, so the similarities between the two embodiments will not be repeated (e.g., the feed pipe 22).

[0073] like Figure 10 As shown, the crystal growth doping method S100 sequentially includes a gate opening step S1, a material storage cover removal step S3, a material storage step S5, a material storage cover placement step S7, a gate closing step S9, and a doping step S11.

[0074] like Figure 10 and Figure 11 As shown, in the gate opening step S1, the opening member 27 can be used to enter the feed pipe 22 from the placement port 221 and abut against the gate pipe opening 241 of the gate pipe body 24. The opening member 27 can also be used to push the gate pipe body 24 along the oblique insertion direction F2 so that the gate pipe body 24 moves away from the placement port 221 of the feed pipe 22. Then the opening member 27 engages with the feed pipe 22.

[0075] Specifically, when the gate opening step S1 is performed, the second rod 272 of the opening member 27 will enter from the operating port 2121 of the operating tube 212, and the second recess 273 will detachably abut against the gate port 241 of the gate tube 24. Then, the opening member 27 will push the gate tube 24 along the oblique insertion direction F2 to move the gate tube 24 away from the placement port 221. Then, the engaging part 274 of the opening member 27 will engage with the operating port 2121 of the operating tube 212, so that the gate tube 24 remains in a state away from the placement port 221.

[0076] like Figure 10 and Figure 12 As shown, in the material storage cover removal step S3, the removal member 26 is used to pass through the recess 2213 of the placement port 221, thereby suspending the handle 252 of the material storage cover 25 on the removal member 26, and causing the material storage cover 25 to be driven from the placement port 221 along the oblique insertion direction F2 to the outside of the feed pipe 22.

[0077] Specifically, when the storage cover removal step S3 is performed, the first rod 262 of the removal member 26 will pass through the door handle 271 to enter the placement port 221, then pass through the lower recess 2213 and hook and support the handle 252 with the first recess 263, and then the storage cover 25 will be driven from the placement port 221 along the oblique insertion direction F2 to the outside of the feed tube 22.

[0078] like Figure 7 and Figure 10 As shown, in the storage step S5, the dopant 300 is placed inside the storage tank 251 of the storage cover 25. Specifically, the dopant 300 is placed into the storage tank 251 from the inlet 253 through the inlet tube 254, and when the dopant 300 is in the storage tank 251, it is positioned between the inlet tube 254 and the inner wall of the storage cover 25. This prevents the dopant 300 from easily falling out of the inlet 253.

[0079] like Figure 10 As shown, in the storage cover placement step S7, the take-out member 26 suspends the handle 252, and then the take-out member 26 passes through the recess 2213 so that the storage cover 25 can be placed inside the feed pipe 22. Wherein, as... Figure 14 As shown, when the storage hood 25 is installed inside the feed pipe 22, the side of the storage hood 25 adjacent to the material inlet 253 abuts against the flat pipe opening 2241.

[0080] like Figure 10 and Figure 13 As shown, in the gate closing step S9, the opening member 27 separates from the gate opening 241 of the gate tube body 24, causing the gate tube body 24 to move along the oblique insertion direction F2, thereby isolating the placement port 221 from the internal space of the feed tube 22.

[0081] like Figure 10 and Figure 14 As shown, in the doping step S11, the feed pipe 22 is moved by the magnetic moving mechanism 23 so that the position of the storage hood 25 is close to the molten raw material 200, thereby causing the dopant 300 to be heated and vaporized and enter the molten raw material 200.

[0082] [Beneficial Effects of the Examples]

[0083] One of the beneficial effects of the present invention is that the crystal growth doping device 100 and the crystal growth doping method S100 provided by the present invention can avoid the problem of internal contamination of the dopant 300 and the crystal growth doping device 100 by means of the technical solution that "the storage cover 25 is detachably disposed in the gate tube 24, wherein when the storage cover 25 is disposed in the gate tube 24, the gate tube 24 can be used to isolate the internal space of the placement port 221 and the feed tube 22". It also avoids the problem that the dopant 300 is prone to hitting the placement port 221 of the feed tube 22 when the crystal growth doping device 100 is taken out / placed, thereby causing damage to the feed tube 22.

[0084] Furthermore, the crystal growth doping device 100 can make it difficult for the dopant 300 to fall out of the material inlet 253 by means of the technique that "the material placement tube 254 is recessed from the material placement port 253 toward the interior of the material storage tank 251, and the material placement tube 254 and the inner wall of the material storage cover 25 together form the material storage tank 251".

[0085] Furthermore, the crystal growth doping device 100 can increase the structural strength of the feed tube 22 and effectively reduce the stress on the feed tube 22 during operation by means of the technical means that "two rounded corners 2211a are formed on each side of the shrinkage groove 2211 along a direction perpendicular to the oblique insertion direction F2, and each rounded corner 2211a is 120 degrees to 180 degrees".

[0086] Furthermore, the crystal growth doping equipment 100 can be operated by the user without turning on the crystal growth doping equipment 100 by means of the "magnetic moving mechanism 23 being used to move the feed tube 22" to avoid problems such as contamination.

[0087] Furthermore, the crystal growth doping device 100 can use the technical means of "the placement port 221 is formed with the shrinkage groove 2211, and the shrinkage groove 2211 is connected to the upper recess 2212 and the lower recess 2213" to ensure that the take-out member 26 has sufficient space to move when it is inserted into the placement port 221, so as to avoid the problem that the take-out member 26 will hit the placement port 221 when it takes the storage cover 25 out of the placement port 221, thereby causing damage to the feed tube 22.

[0088] Furthermore, the crystal growth doping device 100 can, through the technical means that "the length of the long groove 242a is not less than the length of the placement port 221a, and the ratio of the length of the long groove 242a to the length of the placement port 221a is 1.3 to 2", enable the gate tube 24 to be engaged with the tenon 222, thereby isolating the internal space of the placement port 221 from the feed tube 22, and ensuring that the structural strength of the gate tube 24 can still be maintained to a certain extent even when the long groove 242 is formed.

[0089] The content disclosed above is only a preferred and feasible embodiment of the present invention and is not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made based on the content of the present invention specification and drawings are included in the scope of the patent application of the present invention.

Claims

1. A crystal growth doping apparatus, comprising: The long crystal doping device comprises: a long crystal furnace comprising a furnace body and a crucible arranged inside the furnace body, and the crucible is used to contain a molten raw material; and a doping device comprising: a feeding pipe which is arranged in the furnace body in an inclined insertion direction relative to a horizontal direction, and the feeding pipe is formed with a placement opening extending on the outer surface of the feeding pipe; wherein the placement opening is recessed from the edge to form an upper recess and a lower recess in the inclined insertion direction; a storage cover which is detachably arranged in the feeding pipe, and the storage cover comprises a storage tank and a handle formed on the outer surface of the storage tank; and a gate pipe body which is arranged in the feeding pipe, and the storage cover is detachably arranged in the gate pipe body; wherein when the storage cover is arranged in the gate pipe body, the gate pipe body can be used to isolate the placement opening and the internal space of the feeding pipe.

2. The crystal growing apparatus of claim 1, wherein An end of the feeding pipe adjacent to the crucible comprises a feeding pipe opening and a slope pipe which is partially arranged inside the feeding pipe opening, and both ends of the slope pipe are respectively formed with a flat pipe opening and a slope pipe opening; wherein the slope pipe opening is parallel to the molten surface of the molten raw material.

3. The crystal growing apparatus of claim 2, wherein The position of the slope pipe opening is adjacent to the molten surface of the molten raw material, and the vertical distance between the slope pipe opening and the molten surface is not greater than 5 mm.

4. The crystal growing apparatus of claim 2, wherein The outer diameter of the slope pipe is not greater than the inner diameter of the feeding pipe, and the flat pipe opening is arranged inside the feeding pipe opening; wherein when the storage cover is arranged in the feeding pipe, the side of the storage cover relatively far away from the handle can be detachably arranged in the flat pipe opening.

5. The crystal growing apparatus of claim 4, wherein the dopant delivery system comprises a dopant delivery tube. The storage cover further comprises a loading opening corresponding to the handle and a loading pipe recessed from the loading opening to the inside of the storage tank, the side of the storage cover adjacent to the loading opening abuts against the flat pipe opening, and the loading pipe and the inner wall of the storage cover jointly form the storage tank; wherein the loading opening is used for a dopant to enter the storage tank.

6. The crystal growing apparatus of claim 1, wherein The placement opening of the feeding pipe is formed with a reduced groove, and the reduced groove is located between the upper recess and the lower recess.

7. The crystal growing apparatus of claim 1, wherein One end of the gate pipe body is formed with a gate pipe opening, and the gate pipe opening is recessed to form a long groove in the inclined insertion direction; wherein the length of the long groove in the inclined insertion direction is not less than the length of the placement opening in the inclined insertion direction.

8. The crystal growing apparatus of claim 7, wherein the dopant delivery system comprises a dopant source, a dopant delivery tube, and a dopant delivery tube heater. The ratio of the length of the long groove in the inclined insertion direction to the length of the placement opening in the inclined insertion direction is 1.3 to 2.

9. The crystal growing apparatus of claim 8, wherein the dopant delivery system comprises a dopant source, a dopant delivery tube, and a dopant delivery tube heater. The inside of the feeding pipe further comprises a tenon which can be arranged in the long groove, and when the storage cover is arranged in the gate pipe body, the tenon is engaged with the end of the long groove relatively far away from the gate pipe opening.

10. The crystal growing apparatus of claim 1, wherein The doping device further comprises an outer tube, which is arranged in the furnace body along the oblique insertion direction, and the feeding tube is arranged in the outer tube; wherein the outer tube comprises an operation tube extending along the horizontal direction, and the operation tube comprises an operation tube opening, which is used for the storage cover to enter the inner part of the outer tube from the outer part of the crystal growing furnace.

11. The crystal growing apparatus of claim 10, wherein the dopant delivery system comprises a dopant source, a dopant delivery tube, and a dopant delivery tube heater. The doping device further comprises a taking-out member, which comprises a first rod body and a first recess formed at one end of the first rod body, the position of the first rod body adjacent to one end of the first recess forms a first oblique angle with the length direction of the first rod body, and the taking-out member can be used to enter and extend into the placement opening of the feeding tube from the operation tube opening of the operation tube; wherein the taking-out member can be used to take out the storage cover from the feeding tube and hook and support the handle with the first recess.

12. The crystal growing apparatus of claim 10, wherein the dopant delivery system comprises a dopant delivery system comprising a dopant source, a dopant delivery tube, and a dopant delivery tube heater. The doping device further comprises a magnetic attraction moving mechanism, which is movably installed in the outer tube, and the feeding tube is arranged and abuts against the inner side of the magnetic attraction moving mechanism; wherein the magnetic attraction moving mechanism can be used to move the feeding tube.

13. The crystal growing apparatus of claim 12, wherein the dopant delivery system comprises a dopant source, a dopant delivery tube, and a dopant delivery tube heater. The magnetic attraction moving mechanism further comprises an outer magnetic sleeve movably arranged on the outer surface of the outer tube, an inner magnetic sleeve movably arranged on the inner side of the outer tube, a plurality of attracted accessories movably arranged between the inner side of the outer tube and the inner magnetic sleeve, and a plurality of magnetic attraction members arranged on the side of the outer magnetic sleeve opposite to the outer surface of the outer tube, and a plurality of the attracted accessories correspond to a plurality of the magnetic attraction members.

14. The crystal growing apparatus of claim 10, wherein The doping device further comprises an opening door member, which comprises a second rod body and a second recess formed at one end of the second rod body, the position of the second rod body adjacent to one end of the second recess forms a second oblique angle with the length direction of the second rod body, and the opening door member can be used to enter from the operation tube opening of the operation tube and detachably abut against the opening of the gate tube with the second recess; wherein, The opening door member can be used to push the gate tube along the oblique insertion direction and make the gate tube away from the placement opening.

15. The crystal growing apparatus of claim 14, wherein the dopant delivery system comprises a dopant source, a dopant delivery tube, and a dopant delivery tube heater. The opening door member further comprises a clamping portion at the other end of the opening door member opposite to the second recess; wherein after the opening door member pushes the gate tube and makes the gate tube away from the placement opening, the clamping portion can be used to clamp the operation tube opening of the operation tube, so that the gate tube maintains the state of being away from the placement opening.

16. A method of growing a doped crystal, comprising: The crystal growing doping method is used to cooperate with a doping device arranged in a crystal growing furnace along an oblique insertion direction, and the crystal growing furnace is internally provided with a crucible used to accommodate a molten raw material, and the doping device comprises a feeding tube, a gate tube arranged in the feeding tube, and a storage cover detachably arranged in the gate tube, the feeding tube is formed with a placement opening extending on the outer surface of the feeding tube, and the crystal growing doping method comprises: a gate opening step: a door opening member enters the feeding pipe from the placement opening and abuts against a gate pipe opening of the gate pipe body, and the door opening member pushes the gate pipe body in the oblique insertion direction, so that the gate pipe body is away from the placement opening of the feeding pipe, and then the door opening member is engaged with the feeding pipe; a storage cover taking-out step: a taking-out member passes through the placement opening, and a handle of the storage cover is hung on the taking-out member, and the storage cover is driven out of the feeding pipe along the oblique insertion direction from the placement opening; a storage step: a dopant is placed into the storage cover; a storage cover placing step: the handle is hung by the taking-out member, and then the storage cover is placed into the feeding pipe by the taking-out member; a gate closing step: the door opening member is separated from the gate pipe body, and the gate pipe body is moved in the oblique insertion direction, so that the placement opening is isolated from the internal space of the feeding pipe; and a doping step: the feeding pipe is moved, so that the storage cover is adjacent to the molten raw material, and then the dopant is heated and vaporized and enters the molten raw material.

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