Method and device for determining photoresist parameters in ion implantation process, and storage medium

Abstract

The application provides a method and device for determining photoresist parameters in an ion implantation process and a storage medium. The method comprises determining the height of the photoresist, the angle of ion implantation and the depth of ion implantation; determining the first width of a region without implanted ions based on the height of the photoresist and the angle of ion implantation; determining the second width of a region with over-implanted ions based on the angle of ion implantation and the depth of ion implantation; and determining the position of the photoresist in a structure to be subjected to ion implantation based on the first width and the second width.

Description

Technical Field

[0001] This application relates to semiconductor manufacturing technology, and in particular to methods, apparatus and storage media for determining photoresist parameters in ion implantation processes. Background Technology

[0002] Ion implantation is a crucial step in the fabrication of PN junctions in Complementary Metal Oxide Semiconductor (CMOS). The more advanced the semiconductor manufacturing process, the higher the precision required for ion implantation.

[0003] During ion implantation, the photoresist is typically incident at a specific angle. Because photoresist covers the surface of the structure to be implanted, there will be a deviation between the actual implanted ion location and the theoretically designed location. This deviation will affect the semiconductor structure. Therefore, accurately performing ion implantation based on the theoretically designed location has always been a goal pursued in the semiconductor manufacturing field. Summary of the Invention

[0004] This application provides a method, apparatus, and storage medium for determining photoresist parameters in an ion implantation process, enabling precise ion implantation based on theoretically designed locations.

[0005] The technical solution of this application embodiment is implemented as follows:

[0006] In a first aspect, embodiments of this application provide a method for determining photoresist parameters in an ion implantation process, comprising:

[0007] Determine the height of the photoresist, the angle of ion implantation, and the depth of ion implantation;

[0008] Based on the height of the photoresist and the angle of ion implantation, a first width of the region blocking ion implantation is determined;

[0009] Based on the ion implantation angle and the ion implantation depth, a second width of the region over which ions have been implanted is determined;

[0010] The target position of the photoresist in the structure to be ion implanted is determined based on the first width and the second width.

[0011] In some embodiments, determining the first width of the region blocking ion implantation based on the height of the photoresist and the angle of ion implantation includes:

[0012] Calculate the product of the tangent of the ion implantation angle and the photoresist height;

[0013] The first width is determined by multiplying the tangent of the ion implantation angle by the photoresist height.

[0014] The ion implantation angle is the angle between the ion implantation direction and the normal direction of the ion implanted structural surface.

[0015] In some embodiments, determining the second width of the over-implanted ion region based on the angle of the ion input and the depth of the ion implantation includes:

[0016] Calculate the product of the tangent of the ion implantation angle and the ion implantation depth;

[0017] The second width is determined by multiplying the tangent of the ion implantation angle by the ion implantation depth.

[0018] In some embodiments, determining the target position of the photoresist in the structure to be ion implanted based on the first width and the second width includes:

[0019] The target first coordinate of the photoresist in the horizontal direction is determined to be the difference between the preset first coordinate of the photoresist in the horizontal direction and the second width;

[0020] The second target coordinate of the photoresist in the horizontal direction is determined as the difference between the original first coordinate and the preset width of the photoresist and the first width.

[0021] In some embodiments, after determining the target location of the photoresist in the structure to be ion implanted, the method further includes:

[0022] The photoresist is coated onto the surface of the structure at the target positions;

[0023] Ions are implanted into the surface of the structure at the ion implantation angle to form a pattern on the surface of the structure.

[0024] Secondly, embodiments of this application provide a device for determining photoresist parameters in an ion implantation process, the device comprising:

[0025] The photoresist parameter determination module is used to determine the height of the photoresist, the angle of ion implantation, and the depth of ion implantation.

[0026] A width determination module is used to determine a first width of the region blocking ion implantation based on the height of the photoresist and the angle of ion implantation; and to determine a second width of the region over-implanted based on the angle of ion implantation and the depth of ion implantation.

[0027] A photoresist position determination module is used to determine the target position of the photoresist in the structure to be ion implanted based on the first width and the second width.

[0028] In some embodiments, the width determination module is used to calculate the product of the tangent of the ion implantation angle and the photoresist height;

[0029] The first width is determined by multiplying the tangent of the ion implantation angle by the photoresist height.

[0030] The ion implantation angle is the angle between the ion implantation direction and the normal direction of the ion implanted structural surface.

[0031] In some embodiments, the width determination module is used to calculate the product of the tangent of the ion implantation angle and the ion implantation depth;

[0032] The second width is determined by multiplying the tangent of the ion implantation angle by the ion implantation depth.

[0033] In some embodiments, the photoresist position determination module is used to determine the target first coordinate of the photoresist in the horizontal direction as the difference between the preset first coordinate of the photoresist in the horizontal direction and the second width;

[0034] The second target coordinate of the photoresist in the horizontal direction is determined as the difference between the original first coordinate and the preset width of the photoresist and the first width.

[0035] In some embodiments, the apparatus further includes: a processing module for coating the photoresist on the surface of the structure at the target location;

[0036] Ions are implanted into the surface of the structure at the ion implantation angle to form a pattern on the surface of the structure.

[0037] Thirdly, embodiments of this application provide an electronic device, the electronic device comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein...

[0038] The memory stores instructions that can be executed by the at least one processor, which enables the at least one processor to perform the method for determining photoresist parameters in the ion implantation process described above.

[0039] Fourthly, embodiments of this application provide a computer-readable storage medium storing executable instructions for implementing, when executed by a processor, the method for determining photoresist parameters in the ion implantation process provided in embodiments of this application.

[0040] The method for determining photoresist parameters in the ion implantation process provided in this application includes: determining the height of the photoresist, the ion implantation angle, and the ion implantation depth; determining a first width of the region blocking ion implantation based on the height of the photoresist and the ion implantation angle; determining a second width of the region over-implanted based on the ion implantation angle and the ion implantation depth; and determining the target position of the photoresist in the structure to be ion implanted based on the first width and the second width. In this application embodiment, the position of the photoresist in the structure to be ion implanted is determined according to the height of the photoresist, the ion implantation angle, and the ion implantation depth, thereby achieving precise ion implantation. Attached Figure Description

[0041] Figure 1 This is a schematic diagram of a CMOS model;

[0042] Figure 2 This is a schematic diagram of CMOS fabrication;

[0043] Figure 3 This is a schematic diagram of ions being injected at a certain angle;

[0044] Figure 4 This is a schematic diagram of an optional processing flow for determining photoresist parameters in the ion implantation process provided in the embodiments of this application;

[0045] Figure 5 This is a schematic diagram illustrating the specific implementation process of determining the first width of the region blocking ion implantation based on the height of the photoresist and the angle of ion implantation, as provided in an embodiment of this application.

[0046] Figure 6 This is a schematic diagram illustrating the specific implementation process of determining the second width of the region over-implanted ions based on the ion implantation angle and the ion implantation depth, as provided in this application embodiment.

[0047] Figure 7 This is a schematic diagram illustrating the specific implementation process of determining the target position of the photoresist in the structure to be ion implanted based on the first width and the second width, as provided in the embodiments of this application.

[0048] Figure 8 This is a schematic diagram of the target position of the photoresist provided in an embodiment of this application;

[0049] Figure 9 This is a schematic diagram of the composition of the device for determining photoresist parameters in the ion implantation process provided in the embodiments of this application;

[0050] Figure 10 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0051] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. The described embodiments should not be regarded as limitations on this application. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0052] In the following description, references are made to “some embodiments,” which describe a subset of all possible embodiments. However, it is understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0053] In the following description, the terms "first" and "second" are used merely to distinguish similar objects and do not represent a specific ordering of objects. It is understood that "first" and "second" may be interchanged in a specific order or sequence where permitted, so that the embodiments of this application described herein can be implemented in an order other than that illustrated or described herein.

[0054] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0055] It should be understood that in the various embodiments of this application, the sequence number of each implementation process does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0056] In existing technologies, ion implantation into semiconductor structures generates a channeling effect. To avoid this effect, ion implantation is typically performed at a specific angle. During chip fabrication, photoresist is applied to the surface of the semiconductor structure; the presence of photoresist causes the ion implantation position to deviate from the initially designed position. This change in ion implantation position will affect the semiconductor structure.

[0057] A schematic diagram of the CMOS model, as shown below. Figure 1 As shown, the positions of the source, gate, and drain in CMOS need to be pre-designed, and the source, gate, and drain are all formed by ion implantation.

[0058] A schematic diagram of CMOS fabrication, such as Figure 2 As shown, photoresist can block ion implantation and protect the structure beneath it; ions will be implanted into the surface of the structure that is not covered by photoresist, and the desired semiconductor device can be fabricated by implanting ions into the surface of the structure.

[0059] A schematic diagram of ion implantation at a certain angle in the prior art, such as... Figure 3 As shown, due to the presence of photoresist, there is a region on the surface of the structure that cannot be implanted with ions; this region is called the ion-implantation-blocking region. Figure 3 Region 1. Due to the presence of photoresist, there will be a region on the structure surface that should not have been implanted with ions, but has been implanted with ions. This region is called the over-implanted ion region, such as... Figure 3 Region 2. Both regions that block ion implantation and regions that over-implant ions will make the linewidth of the structure or device uncontrollable. Especially for high-end processes below 10nm, these regions will affect the actual position of the channel, causing deviations in the structure or device.

[0060] Based on this, embodiments of this application provide a method for determining photoresist parameters in an ion implantation process. A schematic diagram of an optional processing flow for the method of determining photoresist parameters in an ion implantation process provided in embodiments of this application is shown below. Figure 4 As shown, it includes at least the following steps:

[0061] Step S101: Determine the height of the photoresist, the angle of ion implantation, and the depth of ion implantation.

[0062] In some embodiments, the height of the photoresist covering the surface of the structure, the angle of ion implantation, and the depth of ion implantation can be determined based on the structure being fabricated or the device to which the structure is applied. The specific implementation process for determining the height of the photoresist, the angle of ion implantation, and the depth of ion implantation is the same as in the prior art and will not be described in detail here.

[0063] Step S102: Based on the height of the photoresist and the angle of ion implantation, determine the first width of the region blocking ion implantation.

[0064] In some embodiments, the specific implementation process for determining the first width of the region blocking ion implantation based on the height of the photoresist and the angle of ion implantation can be as follows: Figure 5 As shown, it includes at least the following steps:

[0065] Step S1021: Calculate the product of the tangent of the ion implantation angle and the photoresist height.

[0066] Step S1022: The product of the tangent of the ion implantation angle and the photoresist height is determined as the first width.

[0067] The ion implantation angle and photoresist height have been determined in step S101. By calculating the product of the tangent of the ion implantation angle and the photoresist height, the first width of the region blocking ion implantation can be obtained.

[0068] In this embodiment of the application, if the ion implantation angle is θ, the photoresist height is t, and the first width is L1, then the first width can be represented by the following formula (1):

[0069] L1=t*tanθ(1)

[0070] Step S103: Based on the ion implantation angle and the ion implantation depth, determine the second width of the region over-implanted ions.

[0071] In some embodiments, the specific implementation process for determining the second width of the over-implanted ion region based on the ion implantation angle and the ion implantation depth can be as follows: Figure 6 As shown, it includes at least the following steps:

[0072] Step S1031: Calculate the product of the tangent of the ion implantation angle and the ion implantation depth.

[0073] Step S1032: The product of the tangent of the ion implantation angle and the ion implantation depth is determined as the second width.

[0074] The ion implantation angle and ion implantation depth have been determined in step S101. By calculating the product of the tangent of the ion implantation angle and the ion implantation depth, the second width of the region over-implanted with ions can be obtained.

[0075] In this embodiment of the application, if the ion implantation angle is θ, the ion implantation depth is H, and the second width is L2, then the first width can be represented by the following formula (2):

[0076] L2=H*tanθ(2)

[0077] Step S104: Determine the target position of the photoresist in the structure to be ion implanted based on the first width and the second width.

[0078] In some embodiments, the specific implementation process of determining the target position of the photoresist in the structure to be ion implanted based on the first width and the second width is as follows: Figure 7 As shown, it includes at least the following steps:

[0079] Step S1041: Determine the target first coordinate of the photoresist in the horizontal direction as the preset first coordinate of the photoresist in the horizontal direction and the second width.

[0080] In some embodiments, the preset first coordinate of the photoresist in the horizontal direction is: the coordinate closest to the origin among two coordinates characterizing the horizontal position of the photoresist, with the structural surface covered by the photoresist as the X-axis. The preset first coordinate is a coordinate predetermined without considering the influence of the photoresist on ion implantation.

[0081] If the first coordinate is preset to X0, then the first coordinate of the target is X0-L2.

[0082] Step S1042: Determine the target second coordinate of the photoresist in the horizontal direction as the difference between the original first coordinate and the preset width of the photoresist and the first width.

[0083] In some embodiments, if the preset first coordinate is X0 and the preset width of the photoresist is L0, then the target second coordinate is X0+L0-L1.

[0084] In this embodiment of the application, a schematic diagram of the target position of the photoresist is shown, as follows: Figure 8 As shown.

[0085] In some embodiments, after step S104 is performed, the method may further include:

[0086] The photoresist is coated on the surface of the structure at the target location; ions are injected into the surface of the structure at the ion implantation angle to form a pattern on the surface of the structure.

[0087] This application also provides a device for determining photoresist parameters in an ion implantation process. A schematic diagram of the structure of this device is shown below. Figure 9 As shown, it includes:

[0088] The photoresist parameter determination module 501 is used to determine the height of the photoresist, the angle of ion implantation, and the depth of ion implantation.

[0089] The width determination module 502 is used to determine a first width of the region blocking ion implantation based on the height of the photoresist and the angle of ion implantation; and to determine a second width of the region over-implanted ions based on the angle of ion implantation and the depth of ion implantation.

[0090] The photoresist position determination module 503 is used to determine the target position of the photoresist in the structure to be ion implanted based on the first width and the second width.

[0091] In some embodiments, the width determination module 502 is used to calculate the product of the tangent of the ion implantation angle and the photoresist height;

[0092] The first width is determined by multiplying the tangent of the ion implantation angle by the photoresist height.

[0093] The ion implantation angle is the angle between the ion implantation direction and the normal direction of the ion implanted structural surface.

[0094] In some embodiments, the width determination module 502 is used to calculate the product of the tangent of the ion implantation angle and the ion implantation depth;

[0095] The second width is determined by multiplying the tangent of the ion implantation angle by the ion implantation depth.

[0096] In some embodiments, the photoresist position determination module 503 is used to determine the target first coordinate of the photoresist in the horizontal direction as the difference between the preset first coordinate of the photoresist in the horizontal direction and the second width;

[0097] The second target coordinate of the photoresist in the horizontal direction is determined as the difference between the original first coordinate and the preset width of the photoresist and the first width.

[0098] In some embodiments, the apparatus further includes: a processing module ( Figure 9 (not shown), used to coat the photoresist on the surface of the structure at the target location;

[0099] Ions are implanted into the surface of the structure at the ion implantation angle to form a pattern on the surface of the structure.

[0100] Figure 10 A schematic block diagram of an example electronic device 800 that can be used to implement embodiments of the present disclosure is shown. In some alternative embodiments, the electronic device 800 may be a terminal device or a server. In some alternative embodiments, the electronic device 800 may implement the method for determining photoresist parameters in the ion implantation process provided in the embodiments of this application by running a computer program. For example, the computer program may be a native program or software module in an operating system; it may be a native application (APP), i.e., a program that needs to be installed in the operating system to run; it may be a small program, i.e., a program that only needs to be downloaded to a browser environment to run; or it may be a small program that can be embedded in any APP. In summary, the above-mentioned computer program may be any form of application, module, or plugin.

[0101] In practical applications, electronic device 800 can be a standalone physical server, a server cluster or distributed system composed of multiple physical servers, or a cloud server providing basic cloud computing services such as cloud services, cloud databases, cloud computing, cloud functions, cloud storage, network services, cloud communication, middleware services, domain name services, security services, CDN, and big data and artificial intelligence platforms. Cloud technology refers to a hosting technology that unifies hardware, software, and network resources within a wide area network (WAN) or local area network (LAN) to achieve data computation, storage, processing, and sharing. Electronic device 800 can be a smartphone, tablet, laptop, desktop computer, smart speaker, smart TV, smartwatch, etc., but is not limited to these.

[0102] Electronic devices are intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. Electronic devices can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, in-vehicle terminals, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present disclosure described and / or claimed herein.

[0103] like Figure 10 As shown, the electronic device 800 includes a computing unit 801, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 802 or a computer program loaded from a storage unit 808 into a random access memory (RAM) 803. The RAM 803 may also store various programs and data required for the operation of the electronic device 800. The computing unit 801, ROM 802, and RAM 803 are interconnected via a bus 804. An input / output (I / O) interface 805 is also connected to the bus 804.

[0104] Multiple components in electronic device 800 are connected to I / O interface 805, including: input unit 806, such as keyboard, mouse, etc.; output unit 807, such as various types of displays, speakers, etc.; storage unit 808, such as disk, optical disk, etc.; and communication unit 809, such as network card, modem, wireless transceiver, etc. Communication unit 809 allows electronic device 800 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0105] The computing unit 801 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 801 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 801 performs the various methods and processes described above, such as the method for determining photoresist parameters in an ion implantation process. For example, in some alternative embodiments, the method for determining photoresist parameters in an ion implantation process can be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as storage unit 808. In some alternative embodiments, part or all of the computer program can be loaded and / or installed on the electronic device 800 via ROM 802 and / or communication unit 809. When the computer program is loaded into RAM 803 and executed by the computing unit 801, one or more steps of the method for determining photoresist parameters in an ion implantation process described above can be performed. Alternatively, in other embodiments, the computing unit 801 may be configured by any other suitable means (e.g., by means of firmware) as a method for determining photoresist parameters in an ion implantation process.

[0106] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0107] The program code used to implement the method for determining photoresist parameters in the ion implantation process of this disclosure can be written in any combination of one or more programming languages. This program code can be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing device, such that when executed by the processor or controller, the functions / operations specified in the flowcharts and / or block diagrams are implemented. The program code can be executed entirely on the machine, partially on the machine, as a standalone software package partially on the machine and partially on a remote machine, or entirely on a remote machine or server.

[0108] In the context of this disclosure, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0109] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device for displaying information to the user (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor); and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the computer. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0110] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as a data server), or computing systems that include middleware components (e.g., an application server), or computing systems that include frontend components (e.g., a user computer with a graphical user interface or web browser through which a user can interact with embodiments of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., a communication network). Examples of communication networks include local area networks (LANs), wide area networks (WANs), and the Internet.

[0111] Computer systems can include clients and servers. Clients and servers are generally located far apart and typically interact via communication networks. Client-server relationships are created by computer programs running on the respective computers and having a client-server relationship with each other. Servers can be cloud servers, servers in distributed systems, or servers incorporating blockchain technology.

[0112] It should be understood that the various forms of processes shown above can be used to reorder, add, or delete steps. For example, the steps described in this disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution disclosed in this disclosure can be achieved, and this is not limited herein.

[0113] The above are merely embodiments of this application and are not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, and improvements made within the spirit and scope of this application are included within the scope of protection of this application.

Claims

1. A method for determining photoresist parameters in an ion implantation process, characterized in that, The method includes: Determine the height of the photoresist, the angle of ion implantation, and the depth of ion implantation; Based on the height of the photoresist and the angle of ion implantation, a first width of the region blocking ion implantation is determined; Based on the ion implantation angle and the ion implantation depth, a second width of the region over which ions have been implanted is determined; The target position of the photoresist in the structure to be ion implanted is determined based on the first width and the second width; Determining the first width of the region blocking ion implantation based on the height of the photoresist and the angle of ion implantation includes: Calculate the product of the tangent of the ion implantation angle and the height of the photoresist; The first width is determined by multiplying the tangent of the ion implantation angle by the height of the photoresist. Wherein, the ion implantation angle is the angle between the ion implantation direction and the normal direction of the ion implanted structural surface; Determining the second width of the region over which ions have been implanted, based on the angle of the ion input and the depth of the ion implantation, includes: Calculate the product of the tangent of the ion implantation angle and the ion implantation depth; The second width is determined by multiplying the tangent of the ion implantation angle by the ion implantation depth. Determining the target position of the photoresist in the structure to be ion implanted based on the first width and the second width includes: The target first coordinate of the photoresist in the horizontal direction is determined to be the difference between the preset first coordinate of the photoresist in the horizontal direction and the second width; The second target coordinate of the photoresist in the horizontal direction is determined as the difference between the value obtained by adding the preset first coordinate and the preset width of the photoresist and the first width.

2. The method according to claim 1, characterized in that, After determining the target location of the photoresist in the structure to be ion implanted, the method further includes: The photoresist is coated onto the surface of the structure at the target positions; Ions are implanted into the surface of the structure at the ion implantation angle to form a pattern on the surface of the structure.

3. A device for determining photoresist parameters in an ion implantation process, characterized in that, The device includes: The photoresist parameter determination module is used to determine the height of the photoresist, the angle of ion implantation, and the depth of ion implantation. A width determination module is used to determine a first width of the region blocking ion implantation based on the height of the photoresist and the angle of ion implantation; and to determine a second width of the region over-implanted based on the angle of ion implantation and the depth of ion implantation. A photoresist position determination module is used to determine the target position of the photoresist in the structure to be ion implanted based on the first width and the second width; The width determination module is used to calculate the product of the tangent of the ion implantation angle and the height of the photoresist; and to determine the product of the tangent of the ion implantation angle and the height of the photoresist as the first width; Wherein, the ion implantation angle is the angle between the ion implantation direction and the normal direction of the ion implanted structural surface; The width determination module is used to calculate the product of the tangent of the ion implantation angle and the ion implantation depth; and to determine the product of the tangent of the ion implantation angle and the ion implantation depth as the second width. The photoresist position determination module is used to determine the target first coordinate of the photoresist in the horizontal direction as the difference between the preset first coordinate of the photoresist in the horizontal direction and the second width; and to determine the target second coordinate of the photoresist in the horizontal direction as the difference between the value obtained by adding the preset first coordinate and the preset width of the photoresist and the first width.

4. The apparatus according to claim 3, characterized in that, The device further includes: A processing module is used to coat the photoresist on the surface of the structure at the target position; Ions are implanted into the surface of the structure at the ion implantation angle to form a pattern on the surface of the structure.

5. An electronic device, characterized in that, The electronic device includes at least one processor; and a memory communicatively connected to the at least one processor; wherein... The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the method of any one of claims 1 to 2.

6. A computer-readable storage medium, characterized in that, It stores executable instructions for implementing the method of any one of claims 1 to 2 when executed by a processor.

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