Semiconductor light emitting device, display apparatus including the same, and method of manufacturing the same

Abstract

A semiconductor light emitting device, a display apparatus including the same, and a method of manufacturing the same are provided. The semiconductor light emitting device includes a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer; a side extension structure disposed adjacent to a sidewall of the semiconductor structure; a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending in a horizontal direction on an upper surface of the side extension structure; and a second electrode having a first portion electrically connected to the second semiconductor layer, and a second portion extending in the horizontal direction on the upper surface of the side extension structure.

Description

Technical Field

[0001] The exemplary embodiments of this disclosure relate to a semiconductor light-emitting device, a display device including the same, and a method of manufacturing the semiconductor light-emitting device. Background Technology

[0002] Low-power and environmentally friendly light-emitting diodes (LEDs) have seen increasing demand in industry and have been used as display pixels, as pixels in display devices, and as backlights in lighting devices or liquid crystal displays (LCDs). Recently, micro-LED display devices using micro-LED chips as pixels have been developed.

[0003] However, as the size of microLED chips decreases, the gaps between electrodes become narrower, increasing the likelihood of defects attributable to alignment errors when the microLED chips are transferred onto the display substrate. To prevent defects attributable to such alignment errors, there may be limitations in reducing chip size. Summary of the Invention

[0004] One or more example implementations provide a semiconductor light-emitting device configured to reduce the likelihood of defects attributable to alignment errors when the semiconductor light-emitting device is transferred onto a display substrate.

[0005] One or more example embodiments also provide a semiconductor light-emitting device that, while reducing the size of the semiconductor chip of the semiconductor light-emitting device, has a sufficiently large gap between the electrodes.

[0006] One or more example embodiments also provide a method of manufacturing a semiconductor light-emitting device that, while reducing the size of the semiconductor chip, has a sufficiently large gap between electrodes.

[0007] One or more example implementations also provide a micro LED display device that includes a semiconductor light-emitting device.

[0008] Other aspects will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practical examples of implementation.

[0009] According to one aspect of an exemplary embodiment, a semiconductor light-emitting device is provided, comprising: a semiconductor structure including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a side extension structure disposed adjacent to a sidewall of the semiconductor structure; a first electrode having a first portion extending through the second semiconductor layer and the light-emitting layer and electrically connected to the first semiconductor layer, and a second portion extending in a horizontal direction on an upper surface of the side extension structure; and a second electrode having a first portion electrically connected to the second semiconductor layer and a second portion extending in a horizontal direction on an upper surface of the side extension structure.

[0010] A portion of the second part of the first electrode and a portion of the second part of the second electrode may extend horizontally beyond the sidewall of the semiconductor structure and may be disposed on the side extension structure.

[0011] The semiconductor light-emitting device may further include an insulating layer disposed on the surface of the second semiconductor layer and on the surface of the side extension structure.

[0012] An insulating layer may be disposed adjacent to the sidewall of the first portion of the first electrode inside the second semiconductor layer and the light-emitting layer, such that the first electrode is spaced apart from the second semiconductor layer and the light-emitting layer, and wherein the first portion of the second electrode may pass through the insulating layer to contact the second semiconductor layer.

[0013] The second part of the first electrode and the second part of the second electrode can be disposed on the surface of the insulating layer.

[0014] The side extension structure may include: a first side extension structure, which is spaced apart from and adjacent to the sidewall of the semiconductor structure; and a second side extension structure, which is disposed between the sidewall of the semiconductor structure and the first side extension structure.

[0015] The second side extension structure can extend to the upper surface of the first side extension structure.

[0016] The semiconductor light-emitting device may further include a first bump disposed on a first electrode and a second bump disposed on a second electrode.

[0017] At least a portion of the first bump and at least a portion of the second bump may extend adjacent to the sidewall of the semiconductor structure and face the surface of the side-extended structure.

[0018] The semiconductor light-emitting device may further include a functional layer disposed on the surface of the second semiconductor layer and comprising a metal or a transparent conductor.

[0019] The width or diameter of a semiconductor structure can range from 1 μm to 100 μm.

[0020] The width or diameter of a semiconductor light-emitting device can be 1.5 to 2.5 times the width or diameter of the semiconductor structure.

[0021] According to another aspect of the exemplary embodiment, a display device is provided, which includes a display substrate containing a driving circuit and a plurality of semiconductor light-emitting devices disposed on the display substrate, wherein each semiconductor light-emitting device includes: a semiconductor structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer; a side extension structure disposed adjacent to the sidewall of the semiconductor structure; a first electrode having a first portion extending through the second semiconductor layer and the light-emitting layer and electrically connected to the first semiconductor layer, and a second portion extending in a horizontal direction on the upper surface of the side extension structure; and a second electrode having a first portion electrically connected to the second semiconductor layer and a second portion extending in a horizontal direction on the upper surface of the side extension structure.

[0022] The plurality of semiconductor light-emitting devices may include a first semiconductor light-emitting device and a second semiconductor light-emitting device arranged adjacent to each other, and the first semiconductor light-emitting device and the second semiconductor light-emitting device may share a single side extension structure arranged between the first semiconductor light-emitting device and the second semiconductor light-emitting device.

[0023] The multiple semiconductor light-emitting devices can be integrally formed.

[0024] The display device may further include a wavelength conversion layer configured to convert the wavelength of light emitted from the plurality of semiconductor light-emitting devices.

[0025] The wavelength conversion layer may include: a first wavelength conversion layer configured to convert light emitted from the plurality of semiconductor light-emitting devices into light having a first wavelength band; and a second wavelength conversion layer configured to convert light emitted from the plurality of semiconductor light-emitting devices into light having a second wavelength band different from the first wavelength band.

[0026] The display device may further include a color filter layer comprising: a first color filter facing the first wavelength conversion layer and configured to transmit light having a first wavelength band; and a second color filter facing the second wavelength conversion layer and configured to transmit light having a second wavelength band.

[0027] A portion of the second part of the first electrode and a portion of the second part of the second electrode may extend adjacent to the sidewall of the semiconductor structure in the horizontal direction and be disposed on the side extension structure.

[0028] Each semiconductor light-emitting device may further include an insulating layer disposed on the surface of the second semiconductor layer and on the surface of the side extension structure.

[0029] An insulating layer may be disposed adjacent to the sidewall of the first portion of the first electrode inside the second semiconductor layer and the light-emitting layer, such that the first electrode is spaced apart from the second semiconductor layer and the light-emitting layer, and wherein the first portion of the second electrode may pass through the insulating layer to contact the second semiconductor layer.

[0030] The second part of the first electrode and the second part of the second electrode can be disposed on the surface of the insulating layer.

[0031] The side extension structure may include: a first side extension structure, which is spaced apart from and adjacent to the sidewall of the semiconductor structure; and a second side extension structure, which is disposed between the sidewall of the semiconductor structure and the first side extension structure.

[0032] The second side extension structure can extend to the upper surface of the first side extension structure.

[0033] Each semiconductor light-emitting device may include a first bump disposed on a first electrode and a second bump disposed on a second electrode.

[0034] At least a portion of the first bump and at least a portion of the second bump may extend adjacent to the sidewall of the semiconductor structure and face the surface of the side-extended structure.

[0035] Each semiconductor light-emitting device may include a functional layer disposed on the surface of a second semiconductor layer and comprising a metal or a transparent conductor.

[0036] The width or diameter of a semiconductor structure can range from 1 μm to 100 μm.

[0037] The width or diameter of each semiconductor light-emitting device can be 1.5 to 2.5 times the width or diameter of the semiconductor structure.

[0038] According to another aspect of the exemplary embodiment, a method for manufacturing a semiconductor light-emitting device is provided, the method comprising: forming a semiconductor structure on a growth substrate, the semiconductor structure formation including forming a first semiconductor layer, forming a light-emitting layer, and forming a second semiconductor layer; transferring the semiconductor structure to a groove in a transfer substrate, the transfer substrate including a barrier in which the groove is formed; filling the groove in the transfer substrate with a fixing layer to fix the semiconductor structure; and forming a first electrode and a second electrode, the first electrode having a first portion extending through the second semiconductor layer and the light-emitting layer and electrically connected to the first semiconductor layer, and a second portion extending in a horizontal direction to a surface of the fixing layer and a surface of the barrier, the second electrode having a first portion electrically connected to the second semiconductor layer and extending in a horizontal direction to a surface of the fixing layer and a surface of the barrier.

[0039] Forming the first electrode and the second electrode may include: forming a first via extending through the second semiconductor layer and the light-emitting layer to expose a portion of the first semiconductor layer; forming an insulating layer on the surface of the fixing layer and the second semiconductor layer and inside the first via; forming a second via extending through the insulating layer to expose a portion of the second semiconductor layer; forming a conductive material inside the first via and on the surface of the fixing layer and the barrier to form the first electrode; and forming a conductive material inside the second via and on the surface of the fixing layer and the barrier to form the second electrode.

[0040] The formation of the semiconductor structure may further include forming a functional layer on the surface of the second semiconductor layer, the functional layer comprising a metal or a transparent conductor.

[0041] The method may further include forming a first bump on the first electrode and forming a second bump on the second electrode.

[0042] At least a portion of the first bump and at least a portion of the second bump can be formed to extend adjacent to the sidewall of the semiconductor structure and face the surface of the fixing layer and the surface of the barrier.

[0043] The width or diameter of a semiconductor structure can be formed in the range of 1 μm to 100 μm.

[0044] The spacing between the centers of the barriers on both sides of the semiconductor structure can be formed to be 1.5 to 3 times the width or diameter of the semiconductor structure.

[0045] According to another aspect of the exemplary embodiment, a semiconductor light-emitting device is provided, comprising: a semiconductor structure including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a side extension structure extending adjacent to a sidewall of the semiconductor structure; a first electrode including a first portion extending in a vertical direction through the second semiconductor layer and the light-emitting layer and in contact with the first semiconductor layer, and a second portion extending in a horizontal direction on the upper surface of the side extension structure; and a second electrode including a first portion extending in a vertical direction and in contact with the second semiconductor layer, and a second portion extending in a horizontal direction on the upper surface of the side extension structure. Attached Figure Description

[0046] The above and / or other aspects, features, and advantages of the exemplary embodiments will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0047] Figure 1A , Figure 1B and Figure 1C This is a schematic cross-sectional view illustrating a process for forming and separating multiple semiconductor structures on a growth substrate according to an exemplary embodiment;

[0048] Figure 2 This is a perspective view illustrating a method for aligning a semiconductor structure using a fluid self-assembly method according to an exemplary embodiment;

[0049] Figure 3 A scanning process for aligning a semiconductor structure is illustrated schematically according to an example embodiment;

[0050] Figure 4A , Figure 4B , Figure 4C , Figure 4D and Figure 4E This is a schematic cross-sectional view illustrating the process of forming electrodes on a semiconductor structure on a transfer substrate according to an exemplary embodiment.

[0051] Figure 5A This indicates that during execution Figure 4C The cross-sectional view of the structure after the process is shown. Figure 5B This indicates that during execution Figure 4D The cross-sectional view of the structure after the process is shown. Figure 5C This indicates that during execution Figure 4E The cross-sectional view of the structure after the process is shown;

[0052] Figure 6 It is shown in Figure 4E The diagram shows a cross-sectional view of the state after the process, where bumps are formed and individual semiconductor light-emitting devices are created.

[0053] Figure 7A This is a schematic cross-sectional view illustrating the structure of a semiconductor light-emitting device according to an exemplary embodiment. Figure 7B This is a schematic cross-sectional view illustrating the structure of a semiconductor light-emitting device according to another exemplary embodiment;

[0054] Figure 8A , Figure 8B , Figure 8C and Figure 8D This is a plan view showing various shapes of a semiconductor light-emitting device according to an example embodiment;

[0055] Figure 9A and Figure 9B This is a cross-sectional view illustrating a process according to an exemplary embodiment of transferring individual semiconductor light-emitting devices onto a carrier substrate and then detaching them from the transfer substrate.

[0056] Figure 10A It is shown in Figure 4E The diagram shows a cross-sectional view of a semiconductor light-emitting device module formed after the process, with bumps created and multiple semiconductor light-emitting devices included. Figure 10BThis is a cross-sectional view illustrating the process of transferring a module comprising multiple semiconductor light-emitting devices onto a carrier substrate. Figure 10C It is a plan view showing the shape of the semiconductor light-emitting device module;

[0057] Figure 11A It is shown in Figure 4E The diagram shows a cross-sectional view of a semiconductor light-emitting device panel after the process has resulted in the formation of bumps and multiple semiconductor light-emitting devices. Figure 11B and Figure 11C This is a cross-sectional view illustrating the process of transferring a semiconductor light-emitting device panel onto a display substrate according to an exemplary embodiment;

[0058] Figure 12 This is a schematic cross-sectional view illustrating the structure of a display device according to an exemplary embodiment;

[0059] Figure 13 This is a schematic cross-sectional view illustrating the structure of a display device according to another exemplary embodiment;

[0060] Figure 14 This is a schematic block diagram of an electronic device according to an example embodiment;

[0061] Figure 15 An example of a display device applied to a mobile device according to an exemplary embodiment is shown;

[0062] Figure 16 An example of a display device according to an exemplary embodiment being applied to a vehicle display device is shown;

[0063] Figure 17 An example of a display device according to an exemplary embodiment being applied to augmented reality glasses or virtual reality glasses is shown;

[0064] Figure 18 An example of a display device applied to a signboard according to an exemplary embodiment is shown; and

[0065] Figure 19 An example of a display device applied to a wearable display according to an exemplary embodiment is shown. Detailed Implementation

[0066] The embodiments will now be described in detail, examples of which are shown in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this regard, the exemplary embodiments may have different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only to illustrate aspects with reference to the accompanying drawings. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of” modify the entire list of elements when following a list of elements, without modifying any individual element in the list. For example, the expression “at least one of a, b, and c” should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0067] The semiconductor light-emitting device, the display device including the same, and the method of manufacturing the semiconductor light-emitting device are described in detail below with reference to the accompanying drawings. Like reference numerals denote like elements in the drawings, and the dimensions of elements may be exaggerated in the drawings for clarity and ease of explanation. The embodiments described below are merely examples, and various modifications can be made from these embodiments.

[0068] In the following text, when a component is described as "above" or "on" another component, the component may be directly above the other component, or a third component may be inserted between them. Singular expressions include plural expressions unless they are clearly different from each other in the context. Furthermore, when a part "includes" a component, this means that the part may further include another component, rather than exclude another component, unless there is different disclosure.

[0069] The term "the" and similar denotative terms may refer to both the singular and the plural. The steps of the methods described herein may be performed in any suitable order unless otherwise indicated herein or clearly contradicted by the context, and embodiments of this disclosure are not limited to the order in which the processes are described.

[0070] In addition, terms such as “…unit” or “module” disclosed in the specification refer to a unit for performing at least one function or operation, which can be implemented by hardware, software or a combination thereof.

[0071] The connections or wiring components between the parts shown in the attached figures represent functional connections and / or physical or circuit connections, which can be represented in actual devices as various alternative or additional functional connections, physical connections or circuit connections.

[0072] Any and all examples or exemplary language used herein are intended only to better illustrate the inventive concept and do not constitute a limitation on the scope of the inventive concept, unless otherwise stated.

[0073] Figures 1A to 1C This is a schematic cross-sectional view illustrating a process for forming and separating multiple semiconductor structures on a growth substrate 101 according to an exemplary embodiment.

[0074] First, refer to Figure 1A An epitaxial layer 110' for fabricating a semiconductor light-emitting device can be formed on the growth substrate 101. For example, when the semiconductor light-emitting device is a light-emitting diode (LED), the epitaxial layer 110' can have a structure in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked sequentially. When the semiconductor light-emitting device is a vertical-cavity surface-emitting laser (VCSEL), the epitaxial layer 110' can have a structure in which an n-type reflective layer, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a p-type reflective layer are stacked sequentially. Detailed structures and fabrication methods of the epitaxial layer 110' can be described using related techniques, therefore, their detailed description is omitted.

[0075] In addition, refer to Figure 1A A functional layer 120, comprising a metal or a transparent conductor, may be further formed on the epitaxial layer 110'. The functional layer 120 may provide a surface energy difference with the bottom surface of the groove of the transfer substrate during the transfer process described below, and may be used as a reflective layer or a current diffusion layer after the semiconductor light-emitting device is completed. The functional layer 120 may be a flat thin film covering the entire upper surface of the epitaxial layer 110' or may be patterned.

[0076] Reference Figure 1B The epitaxial layer 110' can be etched to form multiple semiconductor structures 110. Subsequently, refer to... Figure 1C The semiconductor structure 110 can be detached from the growth substrate 101 by, for example, a chemical lift-off (CLO) method. The size of each semiconductor structure 110 can vary depending on the application, and the semiconductor structure 110 can be separated to have the desired size during a dicing process. For example, the semiconductor structure 110 detached from the growth substrate 101 can be in the form of a disc or a sheet. When the semiconductor structure 110 is used as a micro-LED mounted on a display device, the width or diameter of the semiconductor structure 110 can be, for example, in the range of 1 μm to 100 μm.

[0077] exist Figure 1C In the process shown, no electrodes are formed on each semiconductor structure 110. To form electrodes on each semiconductor structure 110 to complete the formation of the semiconductor light-emitting device, the semiconductor structure 110 can be transferred to a separate transfer substrate. To transfer the semiconductor structure 110 to a separate transfer substrate, for example, a fluid self-assembly method can be used.

[0078] Figure 2This is a perspective view schematically illustrating a method for aligning a semiconductor structure 110 using a fluid self-assembly method according to an exemplary embodiment. (Refer to...) Figure 2 The semiconductor structure 110 can be provided on the upper surface of the transfer substrate 130 having a plurality of grooves 135 arranged in a two-dimensional pattern. The semiconductor structure 110 can be directly dispersed onto the transfer substrate 130 after a liquid is supplied to the grooves 135 of the transfer substrate 130, or it can be included in a suspension and supplied to the transfer substrate 130.

[0079] The liquid supplied to the recess 135 can be any kind of liquid, as long as it does not corrode or damage the semiconductor structure 110, and the liquid supplied to the recess 135 can be supplied to the recess 135 by various methods (such as jetting, dispensing, inkjet dotting, or methods that allow the liquid to flow onto the transfer substrate 130). The liquid may include, for example, one of the groups consisting of water, ethanol, alcohol, polyols, ketones, halogenated hydrocarbons, acetone, flux, and organic solvents or combinations thereof. Organic solvents may include, for example, isopropanol (IPA). The amount of liquid supplied can be adjusted to vary such that the liquid fits the recess 135 or overflows from the recess 15.

[0080] The semiconductor structure 110 can be directly dispersed onto the transfer substrate 130 without any other liquid, or it can be included in a suspension and supplied onto the transfer substrate 130. Various methods (such as jetting methods, droplet distribution methods, inkjet dot methods that discharge liquid like printing methods, methods that allow the suspension to flow onto the transfer substrate 130, etc.) can be used as methods for supplying the semiconductor structure 110 included in the suspension.

[0081] Figure 3 A scanning process for aligning a semiconductor structure 110 according to an example embodiment is illustrated schematically. (Refer to...) Figure 3 The absorber 10 can scan the transfer substrate 130. As the absorber 10, in contact with the transfer substrate 130, passes through the groove 135 according to the scan, the semiconductor structure 110 can be moved into the groove 135, and the absorber 10 can also absorb the liquid L present in the groove 135. The absorber 10 can be any material, as long as the material is capable of absorbing the liquid L, and the shape or structure of the absorber 10 is not limited. The absorber 10 can include, for example, fabric, tissue, polyester fiber, paper, or wiping material.

[0082] The absorber 10 can be used independently without other auxiliary devices, but is not limited thereto. For example, the absorber 10 can be coupled to the support 20 to facilitate scanning of the transfer substrate 130. The support 20 can have various shapes and structures suitable for scanning the transfer substrate 130. For example, the support 20 can have the shape of a rod, blade, plate, wiper, etc. The absorber 10 can be provided on either side of the support 20, or can be wrapped around the support 20. The shapes of the support 20 and the absorber 10 are not limited to the quadrilateral cross-sectional shape shown, but can have a circular cross-sectional shape.

[0083] The absorber 10 can scan the transfer substrate 130 while pressing it with appropriate pressure. Scanning can be performed using various methods, including regular and irregular methods (e.g., sliding, rotating, translating, reciprocating, rolling, rotating, and / or rubbing), for moving the absorber 10. Scanning can also be performed by moving the transfer substrate 130 instead of the absorber 10, and the movement of the transfer substrate 130 can be performed in ways such as sliding, rotating, translating, reciprocating, rolling, rotating, and / or rubbing. Furthermore, scanning can also be performed through the interaction between the absorber 10 and the transfer substrate 130.

[0084] The supply of liquid L to the grooves 135 of the transfer substrate 130 and the supply of semiconductor structure 110 to the transfer substrate 130 can be performed in the reverse order described above. Alternatively, the supply of liquid L to the grooves 135 of the transfer substrate 130 and the supply of semiconductor structure 110 to the transfer substrate 130 can be performed simultaneously in one step. For example, by supplying a suspension containing semiconductor structure 110 to the transfer substrate 130, both liquid L and semiconductor structure 110 can be supplied to the transfer substrate 130 simultaneously. After the absorber 10 scans the transfer substrate 130, semiconductor structures 110 remaining on the upper surface of the transfer substrate 130 without entering the grooves 135 can be removed. Furthermore, the above process can be repeated until semiconductor structures 110 are placed in all the grooves 135. As described above, a large number of semiconductor structures 110 can be aligned on the transfer substrate 130 having a large area using a fluid self-assembly method.

[0085] Figures 4A to 4E This is a cross-sectional view schematically illustrating the process of forming electrodes on a semiconductor structure 110 on a transfer substrate 130 according to an exemplary embodiment.

[0086] Reference Figure 4AThe transfer substrate 130 may include a plurality of barriers 131 disposed on the upper surface of the substrate of the transfer substrate 130 and having a plurality of grooves 135 formed therebetween. The barriers 131 may be formed of an insulating dielectric material. A sacrificial layer may be further disposed between the barriers 131 and the substrate of the transfer substrate 130, or the transfer substrate 130 may be formed as a thin film, making it easier to separate the barriers 131 from the transfer substrate 130 in the process of separating the semiconductor light-emitting device described below. The thickness of the barriers 131 may be slightly greater than or slightly less than the thickness of the semiconductor structure 110. For example, the thickness of the barriers 131 may be 0.8 to 1.2 times the thickness of the semiconductor structure 110.

[0087] Using the fluid self-assembly method described above, each semiconductor structure 110 is disposed in a corresponding recess 135, and a barrier 131 may be provided adjacent to and surrounding the semiconductor structure 110. The semiconductor structure 110 may be configured such that the functional layer 120, including a metal or transparent conductor, faces upwards, i.e., towards the outside of the recess 135, and the lower surface of the semiconductor structure 110 contacts the bottom surface 132 of the recess 135. For this purpose, the bottom surface 132 of the recess 135 that contacts the lower surface of the semiconductor structure 110 may be formed of a dielectric material with a very smooth surface and high hydrophilicity. For example, the root mean square (RMS) roughness of the bottom surface 132 of the recess 135 may be less than or equal to about 50 nm. Furthermore, the lower surface of the semiconductor structure 110 that contacts the bottom surface 132 of the recess 135 may also be hydrophilic and may have an RMS roughness of less than or equal to about 50 nm.

[0088] Furthermore, the functional layer 120, including a metal or transparent conductor, has a large surface energy difference with the bottom surface 132 of the recess 135. Therefore, during the fluid self-assembly method, the functional layer 120, having a large surface energy difference with the bottom surface 132 of the recess 135, naturally faces outwards from the recess 135, and the lower surface of the semiconductor structure 110 more easily contacts the bottom surface 132. Additionally, the functional layer 120 allows the semiconductor structure 110, which remains in the recess 135 without being transferred, to be more easily separated from the transfer substrate 130 during the cleaning process.

[0089] The width or diameter W2 of the recess 135 can be sufficiently larger than the width or diameter W1 of the semiconductor structure 110, making it easier for the semiconductor structure 110 to be positioned within the recess 135. For example, the width or diameter W2 of the recess 135 can be 1.2 to 2 times the width or diameter W1 of the semiconductor structure 110. Furthermore, the distance between the centers of two adjacent barriers 131 or the pitch P of the barriers 131 can be appropriately selected based on the location of the electrodes formed in subsequent processes and the width or diameter of the semiconductor light-emitting device. For example, the pitch P of the barriers 131 can be 1.5 to 3 times the width or diameter W1 of the semiconductor structure 110.

[0090] Reference Figure 4B The gap between the semiconductor structure 110 and the barrier 131 can be filled with a fixing layer 141, thereby fixing the semiconductor structure 110 in the recess 135. For example, after coating the entire upper surface of the transfer substrate 130 with the material of the fixing layer 141, the material of the fixing layer 141 can be partially removed, thereby exposing the upper surface of the semiconductor structure 110. The material of the fixing layer 141 can be, for example, a photocurable polymer. Then, after filling the gap between the semiconductor structure 110 and the barrier 131 with the material of the fixing layer 141, the fixing layer 141 can be formed, for example, by irradiating with ultraviolet light. Therefore, the semiconductor structure 110 can be firmly fixed in the recess 135. Figure 4B In the diagram, the fixing layer 141 is shown as remaining on the upper surface of the block 131, but the implementation is not limited to this. For example, the fixing layer 141 may be disposed only between the semiconductor structure 110 and the block 131, and the fixing layer 141 may not be disposed on the upper surface of the block 131.

[0091] Reference Figure 4C A first via 142 can be formed in the semiconductor structure 110. The first via 142 can be formed to expose the first semiconductor layer of the semiconductor structure 110. Figure 5A This indicates that during execution Figure 4C The diagram shows a cross-sectional view of the structure after the process. (Refer to...) Figure 5AThe semiconductor structure 110 may include a first semiconductor layer 111, a light-emitting layer 112, and a second semiconductor layer 113 stacked sequentially. The first semiconductor layer 111 and the second semiconductor layer 113 may be electrically doped in opposite types. For example, the first semiconductor layer 111 may be doped n-type and the second semiconductor layer 113 may be doped p-type, or the first semiconductor layer 111 may be doped p-type and the second semiconductor layer 113 may be doped n-type. The light-emitting layer 112 may have, for example, a quantum well structure or a multiple quantum well structure. A first via 142 may be formed by etching to extend through the functional layer 120, the second semiconductor layer 113, and the light-emitting layer 112. In this process, a portion of the first semiconductor layer 111 may also be slightly etched, and the upper portion of the first semiconductor layer 111 may be exposed.

[0092] Reference Figure 4D An insulating layer 143 can be formed covering the inner wall of the first via 142 and the upper surface of the semiconductor structure 110. Furthermore, the insulating layer 143 can be etched to form a second via 144, thereby exposing a portion of the upper surface of the semiconductor structure 110. Figure 5B This indicates that during execution Figure 4D The diagram shows a cross-sectional view of the structure after the process. (Refer to...) Figure 5B The insulating layer 143 can completely cover the inner sidewall of the first via 142. Therefore, the sidewalls of the light-emitting layer 112 and the second semiconductor layer 113 within the first via 142 are not exposed to the outside through the insulating layer 143, and only the upper surface of the first semiconductor layer 111 can be partially exposed to the outside without being completely covered by the insulating layer 143. The insulating layer 143 can also be configured to cover the upper surface of the semiconductor structure 110 and the upper surface of the fixing layer 141. When the fixing layer 141 is not on the upper surface of the barrier 131, the insulating layer 143 can cover the upper surface of the barrier 131. The second via 144 can be etched to extend through the insulating layer 143 and the functional layer 120 to expose a portion of the upper surface of the second semiconductor layer 113.

[0093] Reference Figure 4E The first through hole 142 and the second through hole 144 can be filled to form the first electrode 145 and the second electrode 146. Figure 5C This indicates that during execution Figure 4E The diagram shows a cross-sectional view of the structure after the process. (Refer to...) Figure 5CA first electrode 145 filling the first via 142 can be electrically connected to the first semiconductor layer 111. The first electrode 145 can extend laterally on the upper surface of the semiconductor structure 110 and can be configured to protrude laterally relative to the sidewalls of the semiconductor structure 110. For example, the first electrode 145 can extend laterally to face the fixing layer 141 and the block 131 in the vertical direction. A second electrode 146 filling the second via 144 can be electrically connected to the second semiconductor layer 113. The second electrode 146 can also extend laterally on the opposite side of the first electrode 145. For example, the second electrode 146 can extend laterally on the upper surface of the semiconductor structure 110 to protrude laterally relative to the sidewalls of the semiconductor structure 110, thereby facing the fixing layer 141 and the block 131 on the opposite side of the first electrode 145 in the vertical direction.

[0094] The semiconductor light-emitting device 100 can be completed by forming the first electrode 145 and the second electrode 146 on the transfer substrate 130 in the manner described above. The semiconductor light-emitting devices 100 formed on the transfer substrate 130 can be separated and transferred to the display substrate individually, or they can be separated and transferred to the display substrate in units of modules (which are a group of semiconductor light-emitting devices 100), or they can be transferred to the display substrate in units of panels (which include two-dimensionally arranged semiconductor light-emitting devices 100).

[0095] Figure 6 It is shown in Figure 4E The diagram shows a cross-sectional view of the state after the process, where bumps are formed and individual semiconductor light-emitting devices are created. (Refer to...) Figure 6 The first bump 147 and the second bump 148 may be formed on the first electrode 145 and the second electrode 146, respectively. For example, the first bump 147 and the second bump 148 may include solder bumps, gold (Au) bumps, or under-bump metal (UBM). Furthermore, portions of the retaining layer 141 and the barrier 131 may be removed by etching to form trenches 149 provided adjacent to and surrounding each semiconductor light-emitting device 100. However, the first bump 147 and the second bump 148 may be formed after the trenches 149 are formed first. Alternatively, the first bump 147 and the second bump 148 may be omitted, and their formation may be selective depending on the future use of the semiconductor light-emitting device 100.

[0096] As described so far, according to the exemplary embodiment, after forming the semiconductor structure 110 on the growth substrate 101, the semiconductor structure 110 is transferred to a separate transfer substrate 130, and a first electrode 145 and a second electrode 146 are formed on the transfer substrate 130. Therefore, compared to the case where the first electrode 145 and the second electrode 146 are formed directly on the growth substrate 101, the positions of the first electrode 145 and the second electrode 146 can be adjusted relatively freely, and the first electrode 145 and the second electrode 146 can be formed more easily. For example, the positions of the first electrode 145 and the second electrode 146 of the semiconductor light-emitting device 100 formed on the transfer substrate 130 are designed to correspond to the positions of the electrode pads on the display substrate of the display device, for example, the semiconductor light-emitting device 100 can be directly mounted from the transfer substrate 130 to the display substrate.

[0097] The semiconductor light-emitting device 100 manufactured in this manner can have a first electrode 145 and a second electrode 146 that protrude more laterally than the sidewalls of the semiconductor structure 110. Therefore, even when the size of the semiconductor structure 110 is relatively small, the spacing between the first electrode 145 and the second electrode 146 can be sufficiently wide, thereby reducing the likelihood of defects attributable to alignment errors when the semiconductor light-emitting device 100 is transferred onto a display substrate. Thus, for example, the defect rate can be reduced during the manufacture of a display device. Furthermore, since it is not necessary to directly form the first electrode 145 and the second electrode 146 on the growth substrate 101, the size of the semiconductor structure 110 can be further reduced without being limited by the spacing between the first electrode 145 and the second electrode 146, and a greater number of semiconductor structures 110 can be manufactured on a single growth substrate 101.

[0098] Figure 7A This is a schematic cross-sectional view illustrating the structure of a semiconductor light-emitting device 100 according to an exemplary embodiment. (Refer to...) Figure 7AThe semiconductor light-emitting device 100 may include: a semiconductor structure 110 including a first semiconductor layer 111, a light-emitting layer 112, and a second semiconductor layer 113; a side-extension structure 114 provided surrounding and adjacent to the sidewall of the semiconductor substrate 110; a first electrode 145 electrically connected to the first semiconductor layer 111 through the second semiconductor layer 113 and the light-emitting layer 112; and a second electrode 146 electrically connected to the second semiconductor layer 113. The first electrode 145 may include a first portion 145a extending in a vertical direction and electrically connected to the first semiconductor layer 111, and a second portion 145b extending in a horizontal direction on the upper surface of the side-extension structure 114. Furthermore, the second electrode 146 may include a first portion 146a extending in a vertical direction and electrically connected to the second semiconductor layer 113, and a second portion 146b extending in a horizontal direction on the upper surface of the side-extension structure 114. A portion of the second part 145b of the first electrode 145 and a portion of the second part 146b of the second electrode 146 may extend beyond the sidewalls of the semiconductor structure 110 in opposite horizontal directions and may be supported on the side extension structure 114 on opposite sides.

[0099] Furthermore, the semiconductor light-emitting device 100 may further include an insulating layer 143 disposed on the upper surface of the second semiconductor layer 113 and the upper surface of the side extension structure 114. The insulating layer 143 may be disposed adjacent to and surrounding the sidewall of the first portion 145a of the first electrode 145 within the second semiconductor layer 113 and the light-emitting layer 112, such that the first electrode 145 does not contact the second semiconductor layer 113 and the light-emitting layer 112. Furthermore, the first portion 146a of the second electrode 146 may penetrate the insulating layer 143 and contact the second semiconductor layer 113. The second portions 145b of the first electrode 145 and the second portions 146b of the second electrode 146 may be disposed on the upper surface of the insulating layer 143. The insulating layer 143 may extend between the upper surface of the side extension structure 114 and the second portion 145b of the first electrode 145, and between the upper surface of the side extension structure 114 and the second portion 146b of the second electrode 146.

[0100] Furthermore, the semiconductor light-emitting device 100 may further include a functional layer 120 disposed on the surface of the second semiconductor layer 113. The functional layer 120 may include a metal or a transparent conductor. When the functional layer 120 includes a metal, it can function as a reflective layer to reflect light generated by the light-emitting layer 112. Furthermore, when the functional layer 120 includes a transparent conductor, it can function as a current diffusion layer, diffusing the current applied from the second electrode 146 to the entire area of ​​the second semiconductor layer 113. As described above, when the semiconductor structure 110 is aligned on the transfer substrate 130, the functional layer 120 can perform a function that assists in the vertical alignment of the semiconductor structure 110. The functional layer 120 may be disposed between the second semiconductor layer 113 and the insulating layer 143. In particular, the functional layer 120 may be configured to directly contact the upper surface of the second semiconductor layer 113.

[0101] The side extension structure 114 may include: a first side extension structure 114a, separated from and adjacent to the sidewall of the semiconductor structure 110; and a second side extension structure 114b, disposed between the sidewall of the semiconductor structure 110 and the first side extension structure 114a. The first side extension structure 114a may be part of a barrier 131 disposed on the upper surface of the substrate of the transfer substrate 130. Furthermore, the second side extension structure 114b is part of a fixing layer 141 that fills the gap between the semiconductor structure 110 and the barrier 131 during the process of forming the semiconductor light-emitting device 100 on the transfer substrate 130. A portion of the second side extension structure 114b may extend to the upper surface of the first side extension structure 114a. Thus, the insulating layer 143 may directly contact the upper surface of the second side extension structure 114b.

[0102] The semiconductor light-emitting device 100 may further include a first bump 147 disposed on a first electrode 145 and a second bump 148 disposed on a second electrode 146. At least a portion of the first bump 147 may be configured to extend beyond the sidewall of the semiconductor structure 110 and face the upper surface of the side extension structure 114 in the vertical direction. For example, the first bump 147 may be disposed on a second portion 145b of the first electrode 145. Furthermore, at least a portion of the second bump 148 may be configured to extend beyond the sidewall of the semiconductor substrate 110 on the side opposite to the first bump 147 and face the upper surface of the side extension structure 114 in the vertical direction. For example, the second bump 148 may be disposed on a second portion 146b of the second electrode 146.

[0103] Because the semiconductor light-emitting device 100 according to the example embodiment includes a first electrode 145 and a second electrode 146 that extend laterally to protrude further than the sidewalls of the semiconductor structure 110 and the lateral extension structure 114 provided surrounding and adjacent to the sidewalls of the semiconductor structure 110, the width or diameter W3 of the semiconductor light-emitting device 100 can be greater than the width or diameter W1 of the semiconductor structure 110. The width or diameter W3 of the semiconductor light-emitting device 100 can be 1.5 to 2.5 times the width or diameter W1 of the semiconductor structure 110. For example, the width or diameter W1 of the semiconductor structure 110 can be from 1 μm to 100 μm, and the width or diameter W3 of the semiconductor light-emitting device 100 can be from 1.5 μm to 250 μm.

[0104] Figure 7B This is a schematic cross-sectional view illustrating the structure of a semiconductor light-emitting device 100 according to another exemplary embodiment. See also... Figure 4B The fixing layer 141 may be disposed only between the semiconductor structure 110 and the barrier 131, and the fixing layer 141 may not be on the upper surface of the barrier 131. Therefore, the second side extension structure 114b of the semiconductor light-emitting device 100 may be disposed only between the sidewall of the semiconductor structure 110 and the first side extension structure 114a. In this case, the insulating layer 143 may directly contact the upper surface of the first side extension structure 114a and the upper surface of the second side extension structure 114b.

[0105] Furthermore, according to the example embodiment, the shape and size of the semiconductor light-emitting device 100 can be relatively freely selected based on the size and shape of the obstruction 131 or the position of the trench 149. Figures 8A to 8D This is a plan view showing various shapes of the semiconductor light-emitting device 100. (Refer to...) Figure 8A The semiconductor light-emitting device 100 may have a square shape. The first electrode 145 and the second electrode 146 may protrude from both sides of the semiconductor structure 110 to extend. Furthermore, referring to… Figure 8C The semiconductor light-emitting device 100 can have a rectangular shape. (Refer to...) Figure 8B The semiconductor light-emitting device 100 may have a square shape, and the first electrode 145 and the second electrode 146 may extend further along the diagonal direction of the semiconductor light-emitting device 100. Furthermore, the first bump 147 and the second bump 148 may be disposed on opposite sides of the semiconductor light-emitting device 100 in the diagonal direction. (Refer to...) Figure 8D The semiconductor light-emitting device 100 can have a circular or elliptical shape. The shape of the semiconductor light-emitting device 100 is not limited to... Figures 8A to 8D It can be any shape shown, but it can be any other shape.

[0106] The semiconductor light-emitting device 100 completed on the transfer substrate 130 by the above method can be transferred and stored on the carrier substrate when necessary, or it can be directly mounted on the display substrate.

[0107] Figure 9A and Figure 9B This is a cross-sectional view illustrating a process according to an exemplary embodiment of transferring individually separated semiconductor light-emitting devices onto a carrier substrate and then detaching them from the transfer substrate. (Refer to...) Figure 9A A transfer substrate 130 on which the semiconductor light-emitting device 100 is formed can be disposed on a carrier substrate 200. For example, the transfer substrate 130 can be configured such that the first bump 147 and the second bump 148 face the upper surface of the carrier substrate 200. A photosensitive adhesive 210 is applied to the upper surface of the carrier substrate 200, thereby fixing the semiconductor light-emitting device 100 to the carrier substrate 200. Thereafter, the transfer substrate 130 can be detached from the semiconductor light-emitting device 100. As described above, when a sacrificial layer is further provided between the barrier 131 and the substrate of the transfer substrate 130, the transfer substrate 130 can be easily detached. According to another example embodiment, when the transfer substrate 130 is a thin film, the transfer substrate 130 can be detached even more easily. Thus, individually separated semiconductor light-emitting devices 100 can be arranged on the carrier substrate 200. Thereafter, when using the semiconductor light-emitting device 100, when such... Figure 9B When the photosensitive adhesive 210 is irradiated with, for example, ultraviolet light (UV), the adhesive force of the photosensitive adhesive 210 may be weakened, and the semiconductor light-emitting device 100 may detach from the carrier substrate 200.

[0108] The semiconductor light-emitting device 100 can be used as a module unit, which is a group of semiconductor light-emitting devices 100. Figure 10A It is shown in Figure 4E The diagram shows a cross-sectional view of a module comprising a semiconductor light-emitting device after the process has resulted in the formation of bumps. Figure 10B This is a cross-sectional view illustrating the process of transferring a module, including a semiconductor light-emitting device, onto a carrier substrate. Figure 10C This is a plan view showing the shape of a semiconductor light-emitting device module.

[0109] Reference Figure 10A A trench 149 can be formed around the semiconductor light-emitting device 100. A group of semiconductor light-emitting devices 100 disposed together within the trench 149 can form a semiconductor light-emitting device module 100m. For example, although the semiconductor light-emitting device module 100m is in Figure 10AThe embodiment is shown to include three semiconductor light-emitting devices 100, but the implementation is not limited to this. For example, the number of semiconductor light-emitting devices 100 included in the semiconductor light-emitting device module 100m may be equal to the number of semiconductor light-emitting devices 100 disposed in a pixel of the display device. In this case, a semiconductor light-emitting device module 100m may have the size of a pixel of the display device and may be mounted on a driving device to serve as a pixel of the display device. In the semiconductor light-emitting device module 100m, two semiconductor light-emitting devices 100 disposed adjacent to each other may share a side extension structure disposed between the two semiconductor light-emitting devices 100.

[0110] The semiconductor light-emitting device 100 can be transferred to the display substrate, or transferred to the carrier substrate 200 and stored on the carrier substrate 200, on a module-by-module basis. (See reference...) Figure 10B After transferring the semiconductor light-emitting device module 100m onto the carrier substrate 200, the transfer substrate 130 can be separated. (Refer to...) Figure 10C The semiconductor light-emitting device module 100m may have a shape including semiconductor light-emitting devices 100 connected in a row.

[0111] In addition, the semiconductor light-emitting device 100 can be used as a panel unit, which is a group of semiconductor light-emitting devices 100 arranged in two dimensions. Figure 11A It is shown in Figure 4E The diagram shows a cross-sectional view of the state after the process of forming bumps and forming a semiconductor light-emitting device panel including the semiconductor light-emitting device 100. Figure 11B and Figure 11C This is a cross-sectional view illustrating the process of transferring a semiconductor light-emitting device panel onto a display substrate.

[0112] Reference Figure 11A All semiconductor light-emitting devices 100 formed on the transfer substrate 130 can form a semiconductor light-emitting device panel 100p. In the semiconductor light-emitting device panel 100p, two adjacent semiconductor light-emitting devices 100 can share a side extension structure disposed between them. According to another exemplary embodiment, the semiconductor light-emitting devices 100 formed on the transfer substrate 130 can be divided into multiple two-dimensional regions to form multiple semiconductor light-emitting device panels 100p. (See also...) Figure 11B The semiconductor light-emitting device panel 100p can be directly transferred onto the display substrate 300. For example, a transfer substrate 130 can be disposed on the display substrate 300 such that the first bump 147 and the second bump 148 contact corresponding electrode pads on the upper surface of the display substrate 300. After the semiconductor light-emitting device panel 100p is mounted on the display substrate 300, the transfer substrate 130 can be removed, thereby manufacturing a display device such as... Figure 11CThe display panel 1000 is shown. The semiconductor light-emitting device panel 100p may have the same size as, for example, the entire display panel 1000 of the display device. According to another example embodiment, the display panel 1000 can be manufactured by arranging a plurality of semiconductor light-emitting device panels 100p in two dimensions on the display substrate 300.

[0113] Figure 12 This is a schematic cross-sectional view illustrating the structure of a display device 1100 according to an exemplary embodiment. (Refer to...) Figure 12 The display device 1100 may include a display substrate 300, a semiconductor light-emitting device panel 100p mounted on the display substrate 300, and a wavelength conversion layer 400 disposed on the semiconductor light-emitting device panel 100p. Furthermore, the display device 1100 may further include an upper substrate 420 disposed on the wavelength conversion layer 400. Although in Figure 12 The diagram shows a semiconductor light-emitting device panel 100p, but a semiconductor light-emitting device module 100m or an individual semiconductor light-emitting device 100 can also be used.

[0114] The wavelength conversion layer 400 may include a first wavelength conversion layer 400R that converts light emitted from the semiconductor light-emitting device 100 into light having a first wavelength band, a second wavelength conversion layer 400G that converts light emitted from the semiconductor light-emitting device 100 into light having a second wavelength band, and a third wavelength conversion layer 400B that converts light emitted from the semiconductor light-emitting device 100 into light having a third wavelength band different from the first and second wavelength bands. For example, the light having the first wavelength band may be red light, the light having the second wavelength band may be green light, and the light having the third wavelength band may be blue light. The first wavelength conversion layer 400R, the second wavelength conversion layer 400G, and the third wavelength conversion layer 400B may be spaced apart from each other and have separators 410 therebetween, and may each face the corresponding semiconductor light-emitting device 100.

[0115] When the semiconductor light-emitting device 100 emits blue light, the third wavelength conversion layer 400B may include a resin that transmits blue light. The second wavelength conversion layer 400G may convert the blue light emitted from the semiconductor light-emitting device 100 to emit green light. The second wavelength conversion layer 400G may include quantum dots or phosphors that are excited by blue light to emit green light. The first wavelength conversion layer 400R may convert the blue light emitted from the semiconductor light-emitting device 100 into red light for emission. The first wavelength conversion layer 400R may include quantum dots or phosphors that are excited by blue light to emit red light.

[0116] The quantum dots included in the first wavelength conversion layer 400R or the second wavelength conversion layer 400G can have a core-shell structure with a core and a shell, or they can have a particulate structure without a shell. The core-shell structure can include a single-shell structure or a multi-shell structure, such as a double-shell structure. The quantum dots can include group II-VI series semiconductor quantum dots, group III-V series semiconductor quantum dots, group IV-VI series semiconductor quantum dots, group IV series semiconductor quantum dots, and / or graphene quantum dots. The quantum dots can include, for example, cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), and / or indium phosphide (InP), and each quantum dot can have a diameter less than or equal to tens of nm, for example, less than or equal to about 10 nm. The quantum dots included in the first wavelength conversion layer 400R and the second wavelength conversion layer 400G can have different sizes.

[0117] Figure 13 This is a schematic cross-sectional view illustrating the structure of a display device 1200 according to another exemplary embodiment. (Refer to...) Figure 13 The display device 1200 may further include a cap layer 430 on the wavelength conversion layer 400 and a color filter layer 500 on the cap layer 430. The cap layer 430 and the color filter layer 500 may be disposed in... Figure 13 The display device 1200 shown is located between the wavelength conversion layer 400 and the upper substrate 420. The color filter layer 500 includes a first color filter 500R, a second color filter 500G, and a third color filter 500B, separated from each other and having a black matrix 510 therebetween. The first color filter 500R, the second color filter 500G, and the third color filter 500B face the first wavelength conversion layer 400R, the second wavelength conversion layer 400G, and the third wavelength conversion layer 400B, respectively. The first color filter 500R, the second color filter 500G, and the third color filter 500B transmit red light, green light, and blue light, respectively, and absorb other colors of light. When the color filter layer 500 is provided, light emitted from the first wavelength conversion layer 400R without wavelength conversion (excluding red light) and light emitted from the second wavelength conversion layer 400G without wavelength conversion (excluding green light) can be removed by the first color filter 500R and the second color filter 500G respectively, thereby improving the color purity of the display device 1200.

[0118] The aforementioned display device can be applied to various electronic devices with screen display functions. Figure 14 This is a schematic block diagram of an electronic device 8201 according to an example embodiment. (Refer to...) Figure 14Electronic device 8201 can be provided in network environment 8200. In network environment 8200, electronic device 8201 can communicate with another electronic device 8202 through a first network 8298 (short-range wireless communication network, etc.), or can communicate with another electronic device 8204 and / or server 8208 through a second network 8299 (long-range wireless communication network, etc.). Electronic device 8201 can communicate with electronic device 8204 through server 8208. Electronic device 8201 may include processor 8220, memory 8230, input device 8250, audio output device 8255, display device 8260, audio module 8270, sensor module 8276, interface 8277, haptic module 8279, camera module 8280, power management module 8288, battery 8289, communication module 8290, user identification module 8296, and / or antenna module 8297. Some of these components of electronic device 8201 may be omitted, or other components may be added to electronic device 8201. Some of these components may be implemented as an integrated circuit. For example, sensor module 8276 (fingerprint sensor, iris sensor, illuminance sensor, etc.) may be included in display device 8260 (display, etc.).

[0119] Processor 8220 can run software (program 8240, etc.) to control one or more other components (hardware components, software components, etc.) connected to processor 8220 in electronic device 8201 and perform various data processing or operations. As part of the data processing or operation, processor 8220 can load instructions and / or data received from other components (sensor module 8276, communication module 8290, etc.) into volatile memory 8232, process the instructions and / or data stored in volatile memory 8232, and store the result data in non-volatile memory 8234. Non-volatile memory 8234 may include internal memory 8236 installed in electronic device 8201 and removable external memory 8238. Processor 8220 may include main processor 8221 (central processing unit, application processor, etc.) and auxiliary processor 8223 (graphics processing unit, image signal processor, sensor central processor, communication processor, etc.) that can operate independently or together with main processor 8221. The auxiliary processor 8223 can use less power than the main processor 8221 and can perform specialized functions.

[0120] The auxiliary processor 8223 can replace the main processor 8221 in controlling the functions and / or states related to some components of the electronic device 8201 (display device 8260, sensor module 8276, communication module 8290, etc.) when the main processor 8221 is inactive (sleep state), or it can work with the main processor 8221 to control the functions and / or states related to some components of the electronic device 8201 (display device 8260, sensor module 8276, communication module 8290, etc.) when the main processor 8221 is active (application running state). The auxiliary processor 8223 (image signal processor, communication processor, etc.) can be implemented as part of other functionally related components (camera module 8280, communication module 8290, etc.).

[0121] The memory 8230 can store various data required by components of the electronic device 8201 (processor 8220, sensor module 8276, etc.). The data may include, for example, software (program 8240, etc.) and input and / or output data for commands associated with it. The memory 8230 may include volatile memory 8232 and / or non-volatile memory 8234.

[0122] The program 8240 can be stored as software in the memory 8230 and may include an operating system 8242, middleware 8244 and / or application 8246.

[0123] Input device 8250 can receive commands and / or data from outside the electronic device 8201 (such as from a user) for use by components (such as the processor 8220 of the electronic device 8201). Input device 8250 may include a remote control, microphone, mouse, keyboard, and / or digital pen (such as a stylus).

[0124] Audio output device 8255 can output audio signals to the outside of electronic device 8201. Audio output device 8255 may include a speaker and / or a receiver. The speaker can be used for general purposes such as multimedia playback or recording playback, and the receiver can be used to receive incoming calls. The receiver can be integrated into the speaker or can be implemented as a separate, independent device.

[0125] Display device 8260 can visually provide information to the outside of electronic device 8201. Display device 8260 may include a display, holographic device, or projector, and control circuitry for controlling the corresponding device. Display device 8260 may include driving circuitry, micro-semiconductor light-emitting devices, side-reflective structures, under-reflective structures, etc. Display device 8260 may further include touch circuitry configured to detect touch and / or sensor circuitry (pressure sensor, etc.) configured to measure the intensity of the force generated by the touch.

[0126] The audio module 8270 can convert sound into electrical signals, or vice versa. The audio module 8270 can acquire sound through the input device 8250 and output sound through the audio output device 8255 and / or through the speaker and / or headphones of another electronic device (electronic device 8202, etc.) directly or wirelessly connected to the electronic device 8201.

[0127] Sensor module 8276 can detect the operating status (power, temperature, etc.) or external environmental status (user status, etc.) of electronic device 8201, and generate electrical signals and / or data values ​​corresponding to the detected status. Sensor module 8276 may include gesture sensors, gyroscope sensors, atmospheric pressure sensors, magnetic sensors, accelerometers, grip sensors, proximity sensors, color sensors, infrared (IR) sensors, biometric sensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0128] Interface 8277 may support one or more specified protocols that can be used to enable electronic device 8201 to connect directly or wirelessly to another electronic device (e.g., electronic device 8202). Interface 8277 may include a High Definition Multimedia Interface (HDMI), a Universal Serial Bus (USB) interface, an SD card interface, and / or an audio interface.

[0129] Connection end 8278 may include a connector through which electronic device 8201 can be physically connected to another electronic device (such as electronic device 8202). Connection end 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0130] The haptic module 8279 can convert electrical signals into mechanical stimuli (vibration, movement, etc.) or electrical stimuli that can be recognized by the user through touch or kinesthesia. The haptic module 8279 may include a motor, a piezoelectric element, and / or an electrical stimulation device.

[0131] Camera module 8280 can capture still images and video. Camera module 8280 may include a lens assembly containing one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in camera module 8280 can collect light emitted from the object to be imaged.

[0132] The power management module 8288 can manage the power supplied to the electronic device 8201. The power management module 8288 can be implemented as part of a power management integrated circuit (PMIC).

[0133] Battery 8289 can supply power to components of electronic device 8201. Battery 8289 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0134] Communication module 8290 can establish direct (wired) communication channels and / or wireless communication channels between electronic device 8201 and other electronic devices (electronic device 8202, electronic device 8204, server 8208, etc.), and support communication through the established communication channels. Communication module 8290 may include one or more communication processors that operate independently of processor 8220 (application processor, etc.) and support direct and / or wireless communication. Communication module 8290 may include wireless communication module 8292 (cellular communication module, short-range wireless communication module, Global Navigation Satellite System (GNSS) communication module, etc.) and / or wired communication module 8294 (local area network (LAN) communication module, power line communication module, etc.). Among these communication modules, the corresponding communication module can communicate with another electronic device through a first network 8298 (short-range communication network, such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network 8299 (long-range communication network, such as cellular network, Internet, or computer network (e.g., LAN, WAN, etc.)). These various types of communication modules can be integrated into a single component (a single chip, etc.) or implemented as multiple components (multiple chips) that are separate from each other. The wireless communication module 8292 can use user information (International Mobile Subscriber Identity (IMSI) etc.) stored in the user identification module 8296 to authenticate and verify electronic devices 8201 in communication networks such as the first network 8298 and / or the second network 8299.

[0135] Antenna module 8297 can transmit signals and / or power to or from external sources (such as other electronic devices). The antenna may include a radiator comprising a conductive pattern formed on a board (printed circuit board (PCB), etc.). Antenna module 8297 may include one or more antennas. When multiple antennas are included, communication module 8290 can select from the multiple antennas an antenna suitable for a communication method used in a communication network such as a first network 8298 and / or a second network 8299. Signals and / or power can be transmitted or received between communication module 8290 and other electronic devices via the selected antenna. Components other than antennas (RFIC, etc.) may be included as part of antenna module 8297.

[0136] Some of the components can be connected to each other and exchange signals (commands, data, etc.) via communication methods (bus, general purpose input / output (GPIO), serial peripheral interface (SPI), mobile industrial processor interface (MIPI)).

[0137] Commands or data can be sent or received between electronic devices 8201 and 8204 via server 8208 connected to the second network 8299. Other electronic devices 8202 and 8204 can be devices of the same type as electronic device 8201, or devices of a different type. All or some operations performed by electronic device 8201 can be performed by one or more of the other electronic devices 8202, 8204, and server 8208. For example, when electronic device 8201 needs to perform a function or service, it can request one or more other electronic devices to perform part or all of the function or service, instead of performing it itself. Upon receiving the request, one or more other electronic devices can perform additional functions or services related to the request and send the results to electronic device 8201. For this purpose, cloud computing technology, distributed computing technology, and / or client-server computing technology can be used.

[0138] Figure 15 An example of a display device applied to a mobile device 9100 according to an exemplary embodiment is shown. The mobile device 9100 may include a display device 9110, which may include the aforementioned driving circuit, a micro-semiconductor light-emitting device, a side-reflective structure, a bottom-reflective structure, etc. The display device 9110 may have a foldable structure, such as a multi-foldable structure.

[0139] Figure 16 An example of a display device according to an exemplary embodiment applied to a vehicle display device is shown. The display device may be a head-up display device 9200 for a vehicle, and may include a display 9210 provided in a region of the vehicle, and a light path changing member 9220 for changing the light path so that the driver can see the image generated by the display 9210.

[0140] Figure 17 An example of a display device according to an exemplary embodiment being applied to augmented reality (AR) glasses 9300 or virtual reality glasses is shown. AR glasses 9300 may include a projection system 9310 for forming an image and an element 9320 for guiding the image from the projection system 9310 to the user's eyes. The projection system 9310 may include the aforementioned driving circuitry, micro-semiconductor light-emitting devices, side-reflection structures, down-reflection structures, etc.

[0141] Figure 18 An example of a display device applied to a signboard 9400 according to an exemplary embodiment is shown. The signboard 9400 can be used for outdoor advertising displaying digital information, and the advertising content can be controlled via a communication network, etc. This can be illustrated, for example, by referring to the above... Figure 14The described electronic device is used to implement signage 9400.

[0142] Figure 19 An example of a display device applied to a wearable display 9500 according to an exemplary embodiment is shown. The wearable display 9500 may include a driving circuit, a micro-semiconductor light-emitting device, a side-reflective structure, a bottom-reflective structure, etc., and can be referenced above. Figure 14 The electronic device described is used to achieve this.

[0143] The display device according to the example implementation can be applied to a variety of products, such as rollable televisions (TVs), stretchable displays, etc.

[0144] It should be understood that the exemplary embodiments described herein are to be considered descriptive only and not for limiting purposes. The description of features or aspects in each exemplary embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although exemplary embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims and their equivalents.

[0145] This application is based on and claims priority to Korean Patent Application No. 10-2021-0131967, filed on October 5, 2021, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A semiconductor light emitting device comprising: a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer; a side extending structure disposed adjacent to a sidewall of the semiconductor structure; a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending in a horizontal direction on an upper surface of the side extending structure; and a second electrode having a first portion electrically connected to the second semiconductor layer, and a second portion extending in the horizontal direction on the upper surface of the side extending structure, wherein the side extending structure includes: a first side extending structure spaced apart from the sidewall of the semiconductor structure and disposed adjacent to the sidewall of the semiconductor structure; and a second side extending structure disposed between the sidewall of the semiconductor structure and the first side extending structure. 2.The semiconductor light emitting device of claim 1, wherein a portion of the second portion of the first electrode and a portion of the second portion of the second electrode extend beyond the sidewall of the semiconductor structure in the horizontal direction and are disposed on the side extending structure. 3.The semiconductor light emitting device of claim 1, further comprising an insulating layer disposed on a surface of the second semiconductor layer and a surface of the side extending structure. 4.The semiconductor light emitting device of claim 3, wherein the insulating layer is disposed adjacent to a sidewall of the first portion of the first electrode inside the second semiconductor layer and the light emitting layer, such that the first electrode is spaced apart from the second semiconductor layer and the light emitting layer, and wherein the first portion of the second electrode is in contact with the second semiconductor layer through the insulating layer. 5.The semiconductor light emitting device of claim 4, wherein the second portion of the first electrode and the second portion of the second electrode are disposed on a surface of the insulating layer. 6.The semiconductor light emitting device of claim 1, wherein the second side extending structure extends to an upper surface of the first side extending structure between the second portion of the first electrode and the first side extending structure and between the second portion of the second electrode and the first side extending structure. 7.The semiconductor light emitting device of claim 1, further comprising: a first bump disposed on the first electrode; and a second bump disposed on the second electrode. 8.The semiconductor light emitting device of claim 7, wherein at least a portion of the first bump and at least a portion of the second bump extend adjacent to the sidewall of the semiconductor structure and face a surface of the side extending structure. 9.The semiconductor light emitting device of claim 1, further comprising a functional layer disposed on a surface of the second semiconductor layer and including a metal or a transparent conductor. 10.The semiconductor light emitting device of claim 1, wherein a width or a diameter of the semiconductor structure is in a range from 1 μm to 100 μm. ​ ​ ​ 11. The semiconductor light emitting device of claim 10, wherein a width or diameter of the semiconductor light emitting device is 1.5 to 2.5 times a width or diameter of the semiconductor structure.

12. A display device comprising: a display substrate including a driving circuit; and a plurality of semiconductor light emitting devices disposed on the display substrate, wherein each of the semiconductor light emitting devices includes: a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer; a side extending structure disposed adjacent to a sidewall of the semiconductor structure; a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending in a horizontal direction on an upper surface of the side extending structure; and a second electrode having a first portion electrically connected to the second semiconductor layer, and a second portion extending in the horizontal direction on the upper surface of the side extending structure, wherein the side extending structure includes: a first side extending structure spaced apart from the sidewall of the semiconductor structure and disposed adjacent to the sidewall of the semiconductor structure; and a second side extending structure disposed between the sidewall of the semiconductor structure and the first side extending structure.

13. The display device of claim 12, wherein the plurality of semiconductor light emitting devices includes a first semiconductor light emitting device and a second semiconductor light emitting device disposed adjacent to each other, and wherein the first semiconductor light emitting device and the second semiconductor light emitting device share a single side extending structure disposed between the first semiconductor light emitting device and the second semiconductor light emitting device.

14. The display device of claim 12, wherein the plurality of semiconductor light emitting devices are integrally formed.

15. The display device of claim 12, further comprising a wavelength conversion layer configured to convert a wavelength of light emitted from the plurality of semiconductor light emitting devices.

16. The display device of claim 15, wherein the wavelength conversion layer includes: a first wavelength conversion layer configured to convert light emitted from the plurality of semiconductor light emitting devices into light having a first wavelength band; and a second wavelength conversion layer configured to convert light emitted from the plurality of semiconductor light emitting devices into light having a second wavelength band different from the first wavelength band.

17. The display device of claim 16, further comprising a color filter layer including: a first color filter facing the first wavelength conversion layer and configured to transmit light having the first wavelength band; and a second color filter facing the second wavelength conversion layer and configured to transmit light having the second wavelength band.

18. The display device of claim 12, wherein a portion of the second portion of the first electrode and a portion of the second portion of the second electrode extend adjacent to the sidewall of the semiconductor structure in the horizontal direction and are disposed on the side extending structure. ​ ​ 19. The display device of claim 12, wherein each of the semiconductor light emitting devices further comprises an insulating layer disposed on a surface of the second semiconductor layer and a surface of the side extending structure.

20. The display device of claim 19, wherein the insulating layer is disposed inside the second semiconductor layer and the light emitting layer adjacent to a sidewall of the first portion of the first electrode, such that the first electrode is spaced apart from the second semiconductor layer and the light emitting layer, and wherein the first portion of the second electrode is in contact with the second semiconductor layer through the insulating layer.

21. The display device of claim 20, wherein the second portion of the first electrode and the second portion of the second electrode are disposed on a surface of the insulating layer.

22. The display device of claim 12, wherein the second side extending structure extends to an upper surface of the first side extending structure.

23. The display device of claim 12, wherein each of the semiconductor light emitting devices comprises: a first bump disposed on the first electrode; and a second bump disposed on the second electrode.

24. The display device of claim 23, wherein at least a portion of the first bump and at least a portion of the second bump extend adjacent to the sidewall of the semiconductor structure and face a surface of the side extending structure.

25. The display device of claim 12, wherein each of the semiconductor light emitting devices comprises a functional layer disposed on a surface of the second semiconductor layer and comprising a metal or a transparent conductor.

26. The display device of claim 12, wherein a width or a diameter of the semiconductor structure is in a range from 1 pm to 100 pm.

27. The display device of claim 26, wherein a width or a diameter of each of the semiconductor light emitting devices is 1.5 to 2.5 times a width or a diameter of the semiconductor structure.

28. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a semiconductor structure on a growth substrate, the forming the semiconductor structure comprising forming a first semiconductor layer, forming a light emitting layer, and forming a second semiconductor layer; transferring the semiconductor structure to a recess of a transfer substrate, the transfer substrate comprising a barrier in which the recess is formed; filling the recess of the transfer substrate with a fixing layer to fix the semiconductor structure; and forming a first electrode and a second electrode, the first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending in a horizontal direction to a surface of the fixing layer and a surface of the barrier, the second electrode having a first portion electrically connected to the second semiconductor layer, and a second portion extending in the horizontal direction to the surface of the fixing layer and the surface of the barrier.

29. The method of claim 28, wherein the forming the first electrode and the second electrode comprises: ​ ​ ​ ​ ​ ​ ​ ​ ​ forming a first via hole extending through the second semiconductor layer and the light emitting layer such that a portion of the first semiconductor layer is exposed; forming an insulating layer on the surface of the fixing layer and a surface of the second semiconductor layer and inside the first via hole; forming a second via hole extending through the insulating layer such that a portion of the second semiconductor layer is exposed; forming a conductive material inside the first via hole and on the surface of the fixing layer and the surface of the barrier to form the first electrode; and forming a conductive material inside the second via hole and on the surface of the fixing layer and the surface of the barrier to form the second electrode. 30.The method of claim 28, wherein forming the semiconductor structure further comprises forming a functional layer on a surface of the second semiconductor layer, the functional layer comprising a metal or a transparent conductor. 31.The method of claim 28, further comprising: forming a first bump on the first electrode; and forming a second bump on the second electrode. 32.The method of claim 31, wherein at least a portion of the first bump and at least a portion of the second bump are formed to extend adjacent to a sidewall of the semiconductor structure and to face the surface of the fixing layer and the surface of the barrier. 33.The method of claim 28, wherein a width or diameter of the semiconductor structure is formed to be in a range from 1 μm to 100 μm. 34.The method of claim 33, wherein a spacing between centers of the barriers disposed on both sides of the semiconductor structure is formed to be 1.5 to 3 times the width or diameter of the semiconductor structure. 35.A semiconductor light emitting device comprising: a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer; a side extending structure extending adjacent to a sidewall of the semiconductor structure; a first electrode including: a first portion extending in a vertical direction through the second semiconductor layer and the light emitting layer and in contact with the first semiconductor layer; and a second portion extending in a horizontal direction on an upper surface of the side extending structure; and a second electrode including: a first portion extending in the vertical direction and in contact with the second semiconductor layer; and a second portion extending in the horizontal direction on the upper surface of the side extending structure, wherein the side extending structure includes: a first side extending structure spaced apart from and disposed adjacent to the sidewall of the semiconductor structure; and a second side extending structure disposed between the sidewall of the semiconductor structure and the first side extending structure. ​ ​

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