Nozzle, developing device, and processing method for a processed object

Abstract

In one embodiment, a nozzle that ejects a treatment liquid toward a treatment target is provided. The nozzle includes a housing having a central axis, a liquid supply port that supplies the treatment liquid into the housing, a gas supply port that supplies compressed gas into the housing, and an ejection port that ejects the treatment liquid together with the compressed gas, the ejection port having a circular ring shape centered on the central axis.

Description

Technical Field

[0001] This invention relates to a nozzle, a developing apparatus, and a processing method for a workpiece. Background Technology

[0002] Patent Document 1 describes a developing apparatus that supplies a developing solution to a resist film formed on the surface of a workpiece, thereby developing the resist film. This developing apparatus has a nozzle comprising a jet orifice in the shape of a transverse slit, and the developing solution is jetted along with high-pressure gas in a direction inclined from the nozzle towards the short side of the jet orifice, thereby forming a resist pattern on the workpiece.

[0003] Patent Document 1: Japanese Patent No. 5153332

[0004] As described above, in the nozzle described in Patent Document 1, the developer is sprayed in a direction inclined towards the short side of the nozzle, thereby promoting the development of the resist film in that direction. On the other hand, by supplying the developer to the resist film in a direction approximately perpendicular to the long side of the nozzle, the development of the resist film can be suppressed. Therefore, when developing is performed using the nozzle described in Patent Document 1, there is a difference in the pattern size of the resist pattern in the long and short sides of the nozzle. If such a resist pattern is used to process the workpiece, there is a possibility of deviation in the processing accuracy of the workpiece due to the in-plane direction. Therefore, especially when high precision is required for the processing of the workpiece, it becomes difficult to process the workpiece with the required precision. Summary of the Invention

[0005] Therefore, the purpose of this disclosure is to improve the uniformity of processing relative to the workpiece.

[0006] In one embodiment, a nozzle for spraying a treatment liquid is provided. The nozzle comprises a cylindrical housing having a central axis. The housing includes: a liquid supply port for supplying treatment liquid into the housing; a gas supply port for supplying compressed gas into the housing; and a spray port for spraying the treatment liquid and compressed gas together. The spray port has an annular shape centered on the central axis.

[0007] The nozzle described above has an annular spray nozzle from which processing fluid supplied from a liquid supply port and compressed gas supplied from a gas supply port are sprayed. The processing fluid is sprayed uniformly in the circumferential direction around the central axis from the annular spray nozzle, thus suppressing deviations in machining accuracy in this circumferential direction. Therefore, the uniformity of machining relative to the workpiece can be improved.

[0008] In one embodiment, the nozzle may further include a rod member disposed between the liquid supply port and the injection port in the direction extending from the central axis, and having an inclined surface whose diameter increases toward the injection port side. A fluid passage is formed between the inner circumferential surface of the housing and the inclined surface to guide the processing liquid supplied from the liquid supply port and the compressed gas supplied from the gas supply port to the injection port. The processing liquid and compressed gas flowing into the fluid passage formed between the inner circumferential surface of the housing and the rod member are guided along the inclined surface of the rod member and ejected from the injection port. Thus, the processing liquid is ejected in a direction inclined relative to the central axis, thereby enabling the processing liquid to be supplied comprehensively to the side wall surface of the opening of the workpiece. As a result, the processing accuracy of the workpiece can be improved.

[0009] In one embodiment, the nozzle can also be configured to spray the processing liquid in a mist form from the spray port. By spraying the processing liquid in a mist form, the processing liquid can be easily supplied to the interior of the opening of the workpiece, thereby further improving the processing accuracy of the workpiece.

[0010] In one embodiment, the system may further include: a liquid supply pipe that guides the treatment liquid along a central axis into the housing; and a diffuser plate that diffuses the treatment liquid flowing through the liquid supply pipe and has a plurality of openings arranged circumferentially around the central axis. In this embodiment, after the treatment liquid flowing through the liquid supply pipe is diffused by colliding with the diffuser plate, it is guided into the fluid passage along with the compressed air. Introducing the diffused treatment liquid into the fluid passage in this way can improve the uniformity of the treatment liquid sprayed from the nozzle.

[0011] In one embodiment, the processing solution may be a developing solution for developing the resist film or an etching solution for etching the workpiece. By spraying the developing solution or etching solution onto the workpiece from the nozzle described above, the workpiece can be processed with high uniformity.

[0012] In one embodiment, a developing apparatus is provided for developing a resist film formed on a workpiece. The developing apparatus includes: a processing container; the aforementioned nozzle disposed within the processing container; a transport mechanism that moves the workpiece relative to the nozzle within the processing container; a developer supply device that supplies developer as a processing liquid to the nozzle; and a compressed gas supply device that supplies compressed gas to the nozzle.

[0013] In the developing apparatus described above, the developing solution and compressed gas are sprayed together from the nozzle relative to the workpiece, thereby enabling the resist film to be developed with high uniformity.

[0014] In one embodiment, the developer supply device may also supply developer heated to above 40°C to the nozzle. Supplying developer heated to above 40°C to the nozzle enables effective development of the resist film.

[0015] In one embodiment, a recovery device may be further included, which recovers the gas containing the developer from the processing container and performs gas-liquid separation. By performing gas-liquid separation on the gas containing the developer using the recovery device, the developer can be recovered from the gas.

[0016] One method of processing a workpiece includes: a step of forming a photosensitive resist film on the workpiece; a step of exposing the resist film to light; and a step of spraying a developing solution along with compressed gas from a nozzle having an annular nozzle to form a resist pattern.

[0017] In the above-described processing method, a developing solution is sprayed from a nozzle with an annular nozzle to form a resist pattern. Because the developing solution is sprayed uniformly around the annular nozzle, the resist film can be developed with high uniformity. Using the resist pattern formed in this way, the uniformity of processing the workpiece can be improved.

[0018] In one embodiment, the developer can also be sprayed in a mist form from the nozzle. Spraying the developer in a mist form suppresses swelling of the resist film and facilitates the supply of the developer to the interior of the openings in the resist film. Therefore, patterns can be formed on the resist film with high precision.

[0019] In one embodiment, the developer can also be sprayed in a spray pattern that appears annular when viewed from the direction along the central axis of the nozzle, with the diameter increasing as it separates from the nozzle. Spraying the developer in such a spray pattern allows for the formation of patterns on the resist film with high uniformity and high precision.

[0020] In one embodiment, the developer spraying direction may also be tilted at an angle of 10° or less relative to the central axis. By spraying the developer in a direction tilted at an angle of 10° or less relative to the central axis, the developer can be supplied to the sidewalls of the openings in the resist film, thus enabling the formation of patterns on the resist film with high precision.

[0021] In one embodiment, the process may further include spraying abrasive material onto the workpiece through a resist pattern to remove a portion of the workpiece. Processing the workpiece using a resist pattern formed by the above method enables processing with high uniformity.

[0022] In one embodiment, the process further includes spraying etchant from a nozzle through a resist pattern onto the workpiece to remove a portion of the workpiece. By using the nozzle described above to spray the etchant, the workpiece can be processed with high uniformity.

[0023] In one embodiment, the process may further include supplying a stripping solution to the resist pattern to remove the resist pattern from the treated body.

[0024] Invention Effects

[0025] According to one aspect and various embodiments of the present invention, the uniformity of processing the workpiece can be improved. Attached Figure Description

[0026] Figure 1 This is a schematic diagram illustrating a developing apparatus according to one embodiment.

[0027] Figure 2 This is a perspective view of a nozzle in one embodiment.

[0028] Figure 3 This is a cross-sectional view of a nozzle according to one embodiment.

[0029] Figure 4 This is a top view of the diffuser plate.

[0030] Figure 5 This is a bottom view of the nozzle.

[0031] Figure 6 It is along Figure 2 A cross-sectional view of the developer jet stream along line VI-VI.

[0032] Figure 7 It is a diagram showing the scanning direction of the nozzle relative to the object being processed.

[0033] Figure 8 This is a diagram showing how a portion of the resist film is removed through a developing process.

[0034] Figure 9 This is a flowchart illustrating a processing method for a processed object in one embodiment.

[0035] Figure 10 This diagram illustrates the process of forming a resist film.

[0036] Figure 11 This diagram illustrates the process of exposing the resist film.

[0037] Figure 12 This diagram illustrates the process of developing the resist film.

[0038] Figure 13This diagram illustrates the process of sandblasting an object.

[0039] Figure 14 This diagram illustrates the process of peeling off the resist pattern.

[0040] Figure 15 (a) is a SEM image showing the resist pattern formed by Comparative Example 1. Figure 15 (b) is a SEM photograph showing the resist pattern formed by Example 1.

[0041] Figure 16 (a) is a SEM image showing the resist pattern formed by Comparative Example 2. Figure 16 (b) is a SEM photograph showing the resist pattern formed by Example 2. Detailed Implementation

[0042] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. Furthermore, in the following description, the same or equivalent elements will be labeled with the same reference numerals, and repeated descriptions will not be repeated. The scale of the drawings need not be consistent with the scale of the description. In the following description, the photosensitive film on which the pattern is transferred by exposure is referred to as a resist film, and the film having openings with shapes corresponding to the pattern transferred to the resist film, formed by developing the resist film, is referred to as a resist pattern.

[0043] Figure 1 This is a schematic diagram illustrating a developing apparatus 100 according to one embodiment. Figure 1 The developing apparatus 100 shown is, for example, a developing apparatus for developing a resist film whose pattern has been exposed by photolithography. In the following description, the moving direction of the nozzle 2 (described later) will be defined as the X direction, the transport direction of the workpiece 10 (described later) will be defined as the Y direction, and the direction perpendicular to the X and Y directions will be defined as the Z direction.

[0044] like Figure 1 As shown, the developing apparatus 100 includes: a processing container 1, a nozzle 2, a processing object transport mechanism 3, a nozzle transport mechanism 4, a developing solution supply device 5, a compressed air supply device (compressed gas supply device) 6, and a recovery device 7.

[0045] The processing container 1 has a developing chamber S1 inside. A workpiece 10, which is the object to be processed, is disposed in the developing chamber S1. The workpiece 10 is, for example, a processed substrate such as a printed circuit board, silicon substrate, glass substrate, or metal substrate, or it may be an intermediate product that has undergone a prescribed treatment on these processed substrates. A resist film 12 with a prescribed pattern transferred onto the surface of the workpiece 10 is formed. The resist film 12 is, for example, a photosensitive dry film resist.

[0046] The nozzle 2 is positioned in the developing chamber S1 opposite to the workpiece 10, as described later in the spray port 20. The nozzle 2 sprays the developing solution 14 as a processing solution relative to the resist film 12 formed on the workpiece 10. Alternatively, the developing apparatus 100 may include multiple nozzles 2.

[0047] The aforementioned workpiece transport mechanism 3 and nozzle transport mechanism 4 constitute a transport device within the developing chamber S1 that moves the workpiece 10 relative to the nozzle 2. The workpiece transport mechanism 3 supports the workpiece 10 within the developing chamber S1. The workpiece transport mechanism 3 is, for example, a conveyor belt device that transports the workpiece 10 mounted thereon along the Y direction.

[0048] The nozzle transport mechanism 4 holds the nozzle 2 in the developing chamber S1. The nozzle transport mechanism 4 includes, for example, a guide rail 41 extending in the X direction, a holding member 42 holding the nozzle 2, and a drive unit 43 driving the holding member 42. The nozzle transport mechanism 4 moves the holding member 42 along the guide rail 41 by the driving force of the drive unit 43, thereby transporting the nozzle 2 in the X direction.

[0049] In addition, the developing apparatus 100 may have one of the subject transport mechanism 3 and the nozzle transport mechanism 4 as a transport device, so that only one of the subject 10 and the nozzle 2 moves in the X and Y directions, or it may have both the subject transport mechanism 3 and the nozzle transport mechanism 4, so that both the subject 10 and the nozzle 2 move.

[0050] The developer supply device 5 stores the developer 14 used to develop the resist film 12 under high pressure and high temperature. The developer 14 contains, for example, an aqueous sodium carbonate solution. A pipe 51 is connected to the developer supply device 5, through which the developer supply device 5 supplies the developer 14 to the nozzle 2. In addition, the developer supply device 5 can also pressurize the developer 14 heated to above 40°C to deliver it to the nozzle 2.

[0051] The compressed air supply device 6, for example, includes a compressor, which supplies compressed air (compressed gas) 15 to the nozzle 2 via piping 52. The pressure of the compressed air 15 supplied from the compressed air supply device 6 to the nozzle 2 may be slightly less than the pressure of the developer 14 supplied from the developer supply device 5 to the nozzle 2. By adjusting the pressure difference between the compressed air 15 supplied to the nozzle 2 and the developer 14 supplied to the nozzle 2, the amount of developer 14 ejected from the nozzle 2 can be adjusted. The amount of developer 14 ejected increases as the pressure difference between the compressed air 15 supplied to the nozzle 2 and the developer 14 supplied to the nozzle 2 increases. For example, this pressure difference may be set to between 0.01 MPa and 0.05 MPa. Furthermore, the compressed air supply device 6 may also supply a gas other than air to the nozzle 2.

[0052] The recovery unit 7 recovers the gas containing the developer 14 from the developing chamber S1 and performs gas-liquid separation. For example... Figure 1 As shown, the recovery device 7 includes a gas-liquid separator 61. The gas-liquid separator 61, for example, is a cyclone separator, connected to the developing chamber S1 via piping 53 and to a blower 62 via piping 54. During the development of the resist film 12, developer 14 and compressed air 15 are sprayed from nozzle 2, thereby increasing the internal pressure of the developing chamber S1. Therefore, it is necessary to create a negative pressure in the developing chamber S1. The blower 62 draws gas from the gas-liquid separator 61 via piping 54. By creating a negative pressure within the gas-liquid separator 61 through the blower 62, the gas containing developer 14 in the developing chamber S1 is drawn to the gas-liquid separator 61 via piping 53. The gas-liquid separator 61 includes a filter that captures the developer 14 contained in the drawn gas and recovers the captured developer 14 to a recovery tank 63. The developer 14 recovered by the recovery tank 63 is reused in the development process of the resist film 12.

[0053] Additionally, the developer solution 14 ejected from nozzle 2 is collected in a tank located below the developing chamber S1. The developer solution 14 collected in this tank is discharged to the outside of the developing apparatus 100 by a pump. Furthermore, the collected developer solution 14 can also be returned to the developer supply device 5 for reuse in the developing process of the resist film 12.

[0054] Reference Figure 2 as well as Figure 3 The nozzle of one embodiment will be described in detail. Figure 2 This is a 3D view of nozzle 2. Figure 3 This is a cross-sectional view along the central axis AX of nozzle 2. (Example) Figure 2 as well as Figure 3 As shown, the nozzle 2 has an annular spray port 20 from which developer 14 and compressed air 15 are sprayed as a gas-liquid two-phase flow. In the following description, the direction on the side of the spray port 20 is referred to as the front end side of the nozzle 2, and the direction on the side opposite to the spray port 20 is referred to as the base end side of the nozzle 2.

[0055] like Figure 2 as well as Figure 3As shown, the nozzle 2 has a cylindrical housing 22. The housing 22 has a cylindrical shape with its axis aligned with the central axis AX, and has a mixing chamber S2 inside. The housing 22 includes a base end portion 221, a middle portion 222, and a front end portion 223. The base end portion 221, the middle portion 222, and the front end portion 223 are arranged sequentially from the base end side of the nozzle 2. These base end portions 221, the middle portion 222, and the front end portion 223 can be integrally formed or configured as separate parts connected to each other. The inner circumferential surface 221s of the base end portion 221 has a substantially constant diameter in a direction parallel to the central axis AX. The inner circumferential surface 222s of the middle portion 222 gradually narrows towards the front end side of the nozzle 2. The inner circumferential surface 223s of the front end portion 223 gradually widens towards the front end of the nozzle 2. The inner circumferential surface 221s of the base end portion 221 and the inner circumferential surface 222s of the middle portion 222 divide the mixing chamber S2. The inner circumferential surface 223s of the front end 223 divides the fluid passage 40, which will be described later.

[0056] The housing 22 has a liquid supply port 24 for supplying developer 14 into the housing 22 and a gas supply port 26 for supplying compressed air 15 into the housing 22. The liquid supply port 24 is formed on the central axis AX of the housing 22, and a liquid supply pipe 25 is inserted into the liquid supply port 24. The liquid supply pipe 25 provides an inlet path 28 for guiding the developer 14 along the central axis AX to the mixing chamber S2. The base end of the liquid supply pipe 25 is connected to the piping 51. The front end of the liquid supply pipe 25 is disposed in the mixing chamber S2. The developer 14 supplied from the developer supply device 5 is guided to the mixing chamber S2 through the piping 51 and the liquid supply pipe 25.

[0057] In one embodiment, a diffusion plate 30 for diffusing the developer 14 flowing in the liquid supply pipe 25 may also be provided at the end of the front end of the liquid supply pipe 25. The diffusion plate 30 has a generally circular shape and is disposed on the central axis AX.

[0058] Figure 4 This is a top view of diffuser plate 30. (Example) Figure 4 As shown, the diffuser plate 30 has a plurality of openings 32 through which the developer 14 can pass. These plurality of openings 32 are arranged at equal intervals along an imaginary circle C centered on the central axis AX. The diffuser plate 30 diffuses the developer 14 flowing in the inlet path 28 along the central axis AX and sprays it out from the plurality of openings 32.

[0059] A gas supply port 26 is formed at the base end 221 of the housing 22. A gas supply pipe 27 is connected to the gas supply port 26. The gas supply pipe 27 is connected to the compressed air supply device 6 via a piping 52. Compressed air 15 supplied from the compressed air supply device 6 is guided to the mixing chamber S2 via the piping 52 and the gas supply pipe 27, where it is mixed with the developer 14.

[0060] The nozzle 2 further includes a rod member 36 and a protrusion 38. The rod member 36 and the protrusion 38 are arranged between the liquid supply port 24 and the injection port 20 in a direction parallel to the central axis AX. The protrusion 38 has a generally cylindrical shape and is connected to the lower surface of the diffuser plate 30. The upper surface of the rod member 36 has a diameter approximately the same as that of the protrusion 38 and is fixed to the protrusion 38. The lower surface of the rod member 36 has a larger diameter than the upper surface of the rod member 36. That is, the rod member 36 forms a frustum-shaped cone with a diameter that increases as it approaches the front end of the nozzle 2, and has an inclined surface 36s with a diameter that increases as it approaches the injection port 20.

[0061] like Figure 3 As shown, the inclined surface 36s is inclined at an angle θ relative to the central axis AX. The angle θ is arbitrarily set in relation to the pattern size formed in the resist pattern. Corresponding to this angle θ, the spray angle of the developer 14 ejected from the spray nozzle 20 is determined. For example, the angle θ is set to be greater than 0° and less than 10°.

[0062] The inclined surface 36s of the rod member 36 is configured to face the inner peripheral surface 223s of the front end portion 223 with a gap between them. In other words, the inner peripheral surface 223s of the front end portion 223 is configured to surround the inclined surface 36s of the rod member 36. A fluid passage 40 is formed between these inner peripheral surfaces 223s and the inclined surface 36s, guiding the developer 14 supplied from the liquid supply port 24 and the compressed air 15 supplied from the gas supply port 26 from the mixing chamber S2 to the injection port 20.

[0063] The fluid passage 40 extends along the inclined surface 36s of the rod member 36, and has a substantially constant width (the distance between the inner circumferential surface 223s and the inclined surface 36s) in the direction of extension of the fluid passage 40. The fluid passage 40 has an annular shape when viewed from a cross-section perpendicular to the central axis AX, and its diameter increases towards the nozzle 20. The fluid passage 40 guides the developer 14 and compressed air 15 mixed in the mixing chamber S2 to the nozzle 20.

[0064] The outlet of the fluid passage 40 constitutes the jet nozzle 20 for the spray developer 14 and the compressed air 15. Figure 5 This is a bottom view of nozzle 2. (As shown) Figure 5As shown, the nozzle 2's spray port 20 is formed between the lower surface of the rod member 36 and the lower surface of the inner circumferential surface 223s of the front end 223, and has an annular shape centered on the central axis AX. When the developer 14 is sprayed from the spray port 20, it is atomized into a mist by the shearing force of the compressed air 15.

[0065] Reference Figure 3 The flow of developer 14 and compressed air 15 within nozzle 2 will be described. Developer 14, supplied from developer supply device 5, is guided to liquid supply pipe 25 via piping 51 and flows along the extension direction of the central axis AX in inlet path 28. Developer 14 reaching the end of inlet path 28 collides with diffuser plate 30 and is diffused within inlet path 28. Developer 14 diffused within inlet path 28 is randomly sprayed into mixing chamber S2 through any one of the plurality of openings 32. Thus, a uniform amount of developer 14 is discharged from the plurality of openings 32.

[0066] On the other hand, compressed air 15 supplied from compressed air supply device 6 is introduced into mixing chamber S2 via piping 52 and gas supply port 26. The compressed air 15 introduced into mixing chamber S2 mixes with the developer 14 passing through multiple openings 32, and is guided along the inner circumferential surface 222s of the central portion 222 to fluid passage 40 along with the developer 14. Then, the developer 14 and compressed air 15 are introduced into the inlet of fluid passage 40 and flow towards the injection port 20. At this time, the flow direction of the developer 14 and compressed air 15 is adjusted to be along the inclined surface 36s of rod member 36. The developer 14 flowing in fluid passage 40, together with compressed air 15, is ejected from the annular injection port 20. At this time, the developer 14 is sheared by the compressed air 15 and is ejected as a mist from the injection port 20.

[0067] The developer 14 is ejected from the nozzle 20 in the same direction as the inclination direction of the inclined surface 36s of the rod member 36. That is, the angle at which the developer 14 is ejected from the nozzle 20, with the central axis AX as a reference, is the same as the angle θ of the inclined surface 36s. Specifically, the developer 14 is ejected from the nozzle 20 at an angle θ less than 10° relative to the central axis AX. Furthermore, the developer 14 is ejected from the nozzle 20 at an angle greater than 0° relative to the central axis AX.

[0068] Figure 6 It is along Figure 2 A cross-sectional view of the jet stream of developer 14 along line VI-VI. The jet nozzle 20 has an annular shape, therefore, as... Figure 6As shown, the flow of the developer 14 ejected from the nozzle 20 exhibits a ring-shaped pattern when viewed in a cross-section perpendicular to the central axis AX. Furthermore, the developer 14 is ejected from the nozzle 20 at an angle θ relative to the central axis AX, therefore the ejection width W of the developer 14 increases as it separates from the nozzle 20. That is, the developer 14 is ejected from the ring-shaped nozzle 20 in a hollow cone (hollow cone) ejection pattern. By ejecting the developer 14 in this pattern, the resist film 12 can be developed with high uniformity and high precision.

[0069] Refer again Figure 1 .like Figure 1 As shown, the developing apparatus 100 further includes a control device 8. The control device 8 is a computer equipped with a processor, storage unit, input device, display device, etc., and controls various parts of the developing apparatus 100. In the control device 8, operators can use the input device to input commands for managing the developing apparatus 100, and the operating status of the developing apparatus 100 can be displayed visually on the display device. The storage unit of the developing apparatus 100 stores control programs for various processes executed by the developing apparatus 100 via the processor, and programs for causing each component of the developing apparatus 100 to perform processes in accordance with processing conditions.

[0070] The control device 8 is communicatively connected to the workpiece transport mechanism 3, the nozzle transport mechanism 4, the developer supply device 5, the compressed air supply device 6, and the recovery device 7. For example, the control device 8 sends control signals to the developer supply device 5 and the compressed air supply device 6 to control the flow rates of the developer 14 and compressed air 15 supplied to the nozzle 2. Additionally, the control device 8 sends control signals to the recovery device 7 to control the operation of the gas-liquid separator 61 and the blower 62. Furthermore, the control device 8 sends control signals to the workpiece transport mechanism 3 and the nozzle transport mechanism 4 to control the transport speed of the workpiece 10 in the Y direction and the movement speed of the nozzle 2 in the X direction.

[0071] Figure 7This diagram schematically illustrates the relative movement direction of nozzle 2 with respect to the workpiece 10. While supplying developer 14 and compressed air 15 to nozzle 2, control device 8 controls workpiece transport mechanism 3 to move workpiece 10 from initial position S towards the Y direction at a constant speed, and then controls nozzle transport mechanism 4 to move nozzle 2 towards the X direction at a constant speed. Next, control device 8 controls workpiece transport mechanism 3 to move workpiece 10 towards the other side of the Y direction at a constant speed, and then controls nozzle transport mechanism 4 to move nozzle 2 towards the X direction at a constant speed. Control device 8 repeatedly controls workpiece transport mechanism 3 and nozzle transport mechanism 4 as described above, scanning nozzle 2 two-dimensionally with respect to workpiece 10, thereby uniformly spraying developer 14 onto the entire surface of resist film 12 formed on workpiece 10.

[0072] As described above, the developer 14 is sprayed relative to the resist film 12 formed on the workpiece 10, thereby developing the resist film 12. Figure 8 (a) is a cross-sectional view of the resist film 12, which includes the exposed area 12a and the unexposed area 12b. Figure 8 As shown in (b), if developer 14 is sprayed from the nozzle 20 of nozzle 2 relative to the resist 12, the unexposed area 12b of the resist 12 melts and is selectively removed. Figure 8 As shown in (c), if the exposed area 12a of the resist film 12 is completely removed, a resist pattern 16 with an opening 45 corresponding to the exposed pattern can be obtained.

[0073] As described above, the developing apparatus 100 sprays the developer 14 from the annular nozzle 20 in an open cone spray pattern. The developer 14 sprayed from the nozzle 2 is uniformly sprayed around the circumference of the nozzle 20, thus enabling the formation of the resist pattern 16 with high uniformity. Furthermore, spraying the developer 14 from the annular nozzle 20 allows for a wider distribution of the developer 14 compared to spraying from a circular nozzle, thereby enabling faster development of the resist film 12.

[0074] Furthermore, by spraying the developer 14 from the nozzle 2 in a direction inclined at an angle θ relative to the central axis AX, the developer 14 can be uniformly supplied to the sidewalls of the exposure area 12a of the resist film 12. As a result, the verticality of the opening 45 of the resist pattern 16 can be improved, thereby enabling the pattern to be formed with higher precision. For example, during exposure, the energy line L irradiated onto the resist film 12 attenuates towards the lower part of the resist film 12. Therefore, during development, the sidewalls of the opening of the resist film 12 tend to become an inverted cone shape with a width that narrows towards the lower part. Therefore, when the developer 14 is sprayed in a direction parallel to the central axis AX, there is a possibility that the developer 14 does not directly contact the sidewalls of the resist film 12, resulting in developer residue at the lower part of the resist film 12. In contrast, the developer 14 is sprayed from the nozzle 2 in a direction inclined at an angle θ relative to the central axis AX, thereby enabling the developer 14 to directly contact the lower sidewall of the resist film 12. Therefore, even when the thickness of the resist film 12 is large, a resist pattern 16 with small and highly uniform patterns can be formed.

[0075] Furthermore, in conventional developing apparatuses, there is a situation where the developer 14 seeps into the resist film 12 during development, causing the resist film 12 to swell. If the resist film 12 swells, it reduces the width of the opening 45 formed in the resist pattern 16. In contrast, in the developing apparatus 100 described above, a mist of developer 14 is sprayed at high speed from the spray port 20 of the nozzle 2, thus suppressing the seepage of the developer 14 into the resist film 12 and thereby suppressing the swelling of the resist film 12. In addition, the mist of developer 14 penetrates deep into the unexposed area 12b of the resist film 12, thus improving the verticality of the opening 45. Therefore, the accuracy of the pattern formed in the resist pattern 16 can be improved.

[0076] Next, a processing method for the processed object according to one embodiment will be described. Figure 9 This is a flowchart illustrating a processing method for a workpiece according to one embodiment. The method is performed using a substrate processing system including a developing apparatus 100. Hereinafter, a method for processing the workpiece 10 using a resist pattern 16 having openings, thereby removing a portion of the workpiece 10, will be described.

[0077] In this method, firstly, a resist film 12 is formed on the workpiece 10 (step ST1: formation of the resist film). The resist film 12 formed on the workpiece 10 is a photoresist, such as a liquid resist or a dry film resist. When forming the resist film 12 using a liquid resist, the liquid resist is uniformly coated onto the workpiece 10 using a coating machine (e.g., a spin coater, roller coater, die coater, doctor blade coater, etc.) or by screen printing. Then, the coated liquid resist is dried, thereby forming the resist film 12 on the workpiece 10.

[0078] On the other hand, when a resist film 12 is formed using a dry film resist, a lamination device is used. Figure 10 An exemplary laminating apparatus 70 used to form the resist film 12 is shown. The laminating apparatus 70 includes: a supply roller 71 for holding a photosensitive dry film resist; a pressing roller 72 for winding the dry film resist and pressing it against the workpiece 10; and a platform 73 for supporting the workpiece 10. The pressing roller 72 applies pressure to the dry film resist wound from the supply roller 71 while peeling off the protective film, thereby adhering the dry film resist to the workpiece 10. The pressing roller 72 may, for example, include a heating element, heating the dry film resist while pressing it against the upper surface of the workpiece 10. Thus, the resist film 12 is formed on the upper surface of the workpiece 10. Alternatively, a heating element may be provided inside the platform 73, using one or both of the pressing roller 72 and the platform 73 to heat the dry film resist, thereby adhering the dry film resist to the workpiece 10.

[0079] The lamination conditions of the dry film resist are appropriately set in accordance with the processing conditions of the workpiece 10. For example, when an alumina substrate with a diameter of 300 mm and a thickness of 10 mm is used as the workpiece 10, and a resist pattern 16 with a dot shape with a diameter of 500 μm is formed on the workpiece 10, as an example, the dry film resist is formed on the workpiece 10 under the lamination conditions shown below.

[0080] (Lamination conditions)

[0081] Stage set temperature: 70℃

[0082] • Platform transport speed: 500mm / min

[0083] Furthermore, the resist material contained in the dry film resist or resist solution can be either a positive or negative resist material. A positive resist material is the resist material where the exposed area 12a of the resist film 12 melts and the unexposed area 12b remains. A negative resist material is the resist material where the unexposed area 12b of the resist film 12 melts and the exposed area 12a remains.

[0084] Next, the resist film 12 formed on the workpiece 10 is exposed using an exposure device (step ST2: exposure treatment). This step is as follows: Figure 11 As shown, the process involves irradiating the resist film 12 with energy lines L (e.g., visible light or ultraviolet light) from a light source of an exposure apparatus through a pattern mask 18 with a predetermined pattern. The pattern mask 18 may be a negative mask, for example, having a structure in which a black film is formed on a transparent substrate (e.g., glass, film, etc.), and having areas through which the energy lines L are transmitted and areas through which the energy lines L are not transmitted. The light source for irradiating the energy lines L may be, for example, an LED lamp, a mercury lamp, a metal halide lamp, an excited excimer lamp, a xenon lamp, etc. In one example, ultraviolet light is irradiated onto the resist film 12 from an ultra-high pressure mercury lamp. Through this exposure process, the pattern of the pattern mask 18 is transferred onto the resist film 12.

[0085] Next, the pattern transferred to the resist film 12 is developed (step ST3: development process). In this step, developer 14 is blown onto the resist film 12, thereby developing the resist film 12. As a conventional developing apparatus, spray-type developing apparatuses that use developer spray nozzles to spray developer pressurized by a pump are generally known. Such spray-type developing apparatuses have difficulty supplying developer 14 into the interior of tiny patterns, making it difficult to develop tiny patterns with high precision. In contrast, in the processing method of the processed object in one embodiment, a method using... Figure 1 The developing apparatus 100 shown develops the resist film 12. For example, the developing apparatus 100 scans the nozzle 2 relative to the workpiece 10 in the X and Y directions while spraying the developing solution 14 and compressed air 15 together from the nozzle 2 having an annular spray port 20 onto the resist film 12. For example, in step ST3, as... Figure 1 As shown, while the nozzle transport mechanism 4 moves the nozzle 2 at high speed in the left-right direction (X direction), the workpiece transport mechanism 3 moves the workpiece 10 in the front-back direction (Y direction). At this time, a mist of developer 14 is sprayed from the spray nozzle 20 into the resist film 12 in an open cone-shaped spray pattern. By spraying the developer 14 onto the resist film 12, the exposed or unexposed areas of the resist film 12 are selectively removed. Afterwards, the developed resist film 12 is washed with water and subjected to air blowing, thereby achieving the desired effect. Figure 12 As shown, a resist pattern 16 with tiny and uniform patterns is formed on the treated body 10.

[0086] The exposure apparatus appropriately sets the development conditions of the resist film 12 in accordance with the shape and size of the pattern formed in the resist pattern 16. For example, in the case of forming a resist pattern 16 with a dot shape having a diameter of 500 μm, the resist film 12 is developed under the development conditions shown below.

[0087] (Developing conditions)

[0088] • Developer: Alkaline aqueous solution

[0089] • Developer temperature: 40℃

[0090] • Nozzle movement width: 500mm

[0091] • Nozzle moving speed: 10m / min

[0092] • Moving speed of the object being processed: 100 mm / min

[0093] In one embodiment, to cure the resist film 12, the body 10 to be treated may be transferred to a heating oven for heat treatment (pre-drying) before the developing process. Alternatively, the body 10 may be cleaned after the developing process and then subjected to reheat treatment (post-drying).

[0094] Next, the object 10 is processed (step ST4: processing). For example, this processing is etching. For example, the etching process is sandblasting. For example, this sandblasting process is performed by a sandblasting treatment apparatus 80. Figure 13 As shown, the sandblasting apparatus 80 scans the sandblasting nozzle 82 in the left-right and front-back directions while blowing abrasive material 84 along with compressed air through the resist pattern 16 onto the workpiece 10, thereby cutting and removing the portion of the workpiece 10 exposed from the opening of the resist pattern 16. As a result, the resist pattern 16 is transferred onto the workpiece 10.

[0095] The sandblasting conditions of the workpiece 10 are appropriately set in accordance with the pattern formed on the workpiece 10. For example, when forming a hole with a depth of 50 μm on the workpiece 10 using the above-described anti-corrosion pattern 16, the workpiece 10 is processed under the sandblasting conditions shown below.

[0096] (Sandblasting processing conditions)

[0097] • The moving speed of the sandblasting nozzle: 10m / min

[0098] • Internal pressure of the sandblasting nozzle: 0.25MPa

[0099] Next, the resist pattern 16 is peeled off from the workpiece 10 using the peeling device 90 (step ST5). For example, as... Figure 14 As shown, the stripping device 90 sprays stripping liquid 94 from the atomizing nozzle 92 onto the surface of the workpiece 10, thereby removing the resist pattern 16 from the surface of the workpiece 10. Through the above series of processes, a workpiece 10 with a tiny pattern is produced.

[0100] The above describes the nozzle 2, developing apparatus 100, and processing method of the processed body in various embodiments, but is not limited to the above embodiments. Various modifications can be made without changing the spirit of the invention.

[0101] For example, in the above embodiment, the developer 14 and compressed air 15 are sprayed together from the nozzle 2, but in one embodiment, the etching solution can also be sprayed from the nozzle 2. In this case, the etching apparatus equipped with the nozzle 2 supplies the etching solution as a processing liquid to the liquid supply pipe 25 of the nozzle 2 and supplies compressed air to the gas supply pipe 27. As a result, the etching solution and compressed air are mixed in the mixing chamber S2, and the atomized etching solution is sprayed from the nozzle 20 with an annular shape in an empty cone spray pattern. The atomized etching solution is sprayed onto the workpiece 10 through the resist pattern 16 in an empty cone spray pattern, thereby uniformly supplying the etching solution to the side wall surface of the opening of the workpiece 10, thus enabling the workpiece 10 to be processed with high precision.

[0102] In addition, Figure 9 In step ST4 of the processing method for the workpiece 10 shown, the workpiece 10 is sandblasted through the resist pattern 16, thereby removing a portion of the workpiece 10. However, in one embodiment, a portion of the workpiece 10 can also be removed by wet etching (chemical etching). Wet etching is a method of locally removing the workpiece 10 by chemically corroding the surface of the workpiece 10 using an etching solution (reagent). In one embodiment, the workpiece 10 can be immersed in the etching solution, or a portion of the workpiece 10 can be removed by spraying the etching solution onto the workpiece 10 through the resist pattern 16. When spraying the etching solution onto the workpiece 10, the etching solution can also be sprayed onto the workpiece 10 from the nozzle 2 in an open conical spray pattern. Spraying the etching solution from the annular nozzle 2 relative to the workpiece 10 allows for processing of the workpiece 10 with high uniformity and precision.

[0103] Alternatively, in other embodiments, in step ST4, the resist pattern 16 that has been developed may be used to perform a plating process on the workpiece 10. For example, a plating layer is formed over the resist pattern 16 formed on the workpiece 10, thereby enabling the formation of a metal mask on the workpiece 10 that corresponds to the shape of the pattern formed in the resist pattern 16.

[0104] As an example, when a dry film resist is adhered to a 300mm×300mm stainless steel substrate to form a resist pattern 16 with a dot shape, and a metal mask is formed on the workpiece 10 using the resist pattern 16, the resist film 12 is formed, exposed, and developed according to the following lamination conditions, exposure conditions, and development conditions.

[0105] (Lamination conditions)

[0106] Stage set temperature: 70℃

[0107] • Platform transport speed: 500mm / min

[0108] (Exposure conditions)

[0109] • Energy line: Ultraviolet rays

[0110] (Developing conditions)

[0111] • Developer: Alkaline aqueous solution

[0112] • Developer temperature: 60℃

[0113] • Nozzle movement width: 400mm

[0114] • Nozzle moving speed: 10m / min

[0115] • Moving speed of the object being processed: 30 mm / min

[0116] In this embodiment, a nickel plating layer is formed on the workpiece 10 having a resist pattern 16 formed according to the conditions described above using an electroplating method. Then, the resist pattern 16 is removed using a stripping solution 94, thereby forming a metal mask.

[0117] Hereinafter, the effects of the nozzle 2 and the developing apparatus 100 described above will be explained based on the embodiments and comparative examples, but the present invention is not limited to the following embodiments.

[0118] In Example 1 and Comparative Example 1, a photosensitive dry film resist was formed on the workpiece 10, and the dry film resist was exposed and developed using photolithography, thereby forming a wet etching resist pattern 16 covering a portion of the workpiece 10. The resist pattern 16 to be formed on the workpiece 10 was designed to have a thickness of 15 μm and a linewidth of 12 μm. In Example 1, from Figure 2The nozzle 2 shown sprays a mist of developer 14 onto the dry film resist in an open cone-shaped spray pattern, thereby forming a resist pattern 16. On the other hand, in Comparative Example 1, liquid developer 14 is supplied to the dry film resist from a spray nozzle, thereby forming a resist pattern 16. The resist patterns 16 formed in Example 1 and Comparative Example 1 are then observed by electron microscopy (SEM).

[0119] Figure 15 (a) is a SEM image of the resist pattern 16 formed by Comparative Example 1. Figure 15 (b) is a SEM image of the resist pattern 16 formed by Example 1. Figure 15 As shown in (a), it was confirmed that the linewidth of the resist pattern 16 formed by Comparative Example 1 was narrower than the linewidth of the dry film resist exposed to 12 μm. In Comparative Example 1, it was believed that the liquid developer 14 penetrated into the dry film resist and swelled, thereby reducing the opening of the resist pattern 16. In contrast, as Figure 15 As shown in (b), it was confirmed that the line width of the resist pattern 16 formed by Example 1 is 12 μm, thereby enabling the resist pattern 16 to be formed with high precision.

[0120] Next, Example 2 and Comparative Example 2 will be described. In Example 2 and Comparative Example 2, a photosensitive dry film resist was formed on the workpiece 10, and the dry film resist was exposed and developed using photolithography, thereby forming a sandblasting resist pattern 16 covering a portion of the workpiece 10. The resist pattern 16 to be formed on the workpiece 10 was designed to have a thickness of 35 μm and a linewidth of 30 μm. In Example 2, from Figure 2 The nozzle 2 shown sprays a mist of developer 14 onto the dry film resist in an open cone-shaped spray pattern, thereby forming a resist pattern 16. On the other hand, in Comparative Example 2, liquid developer 14 is supplied to the dry film resist from a spray nozzle, thereby forming a resist pattern 16. The resist patterns 16 formed in Example 2 and Comparative Example 2 were then observed by electron microscopy (SEM).

[0121] Figure 16 (a) is a SEM photograph of the resist pattern 16 formed by Comparative Example 2. Figure 16 (b) is a SEM image of the resist pattern 16 formed by Example 2. Figure 16 As shown in (a), it was confirmed that in the resist pattern 16 formed by Comparative Example 2, the width of the opening narrowed near the bottom. This narrowing of the opening width is believed to be because a portion of the developer supplied from the spray nozzle remained at the bottom of the opening, and the developer 14 was not adequately supplied to the sidewalls of the opening. In contrast, as Figure 16As shown in (b), it was confirmed that in the resist pattern 16 formed by Example 2, the sidewall surface of the opening has high verticality, and the resist pattern 16 can be developed with high precision.

[0122] Explanation of reference numerals in the attached figures

[0123] 1…processing container; 2…nozzle; 3…processed object transport mechanism; 4…nozzle transport mechanism; 5…developer supply device; 6…compressed air supply device (compressed gas supply device); 7…recovery device; 10…processed object; 12…resist film; 14…developer; 15…compressed air (compressed gas); 16…resist pattern; 20…spray nozzle; 22…shell; 24…liquid supply port; 25…liquid supply pipe; 26…gas supply port; 30…diffuser plate; 32…opening; 36…rod component; 36s…inclined surface; 40…fluid passage; 84…abrasive material; 94…stripping fluid; 100…developing device; 221s, 222s, 223s…inner circumferential surface; AX…central axis; θ…angle.

Claims

1. A nozzle for spraying a treatment liquid, characterized in that, It has a cylindrical shell with a central axis. The housing has: A liquid supply port for supplying the processing fluid into the housing. Gas supply port for supplying compressed gas into the housing A mixing chamber for mixing the treatment liquid and the compressed gas, and An injection nozzle that sprays the treatment liquid and the compressed gas together. The injection nozzle has an annular shape centered on the central axis. The nozzle further comprises: A liquid supply pipe, which guides the treatment liquid along the central axis into the housing; and A diffuser plate, which diffuses the treatment liquid flowing in the liquid supply pipe, is provided with a plurality of openings arranged circumferentially around the central axis. The treatment liquid reaching the end of the liquid supply pipe collides with the diffuser plate and is diffused within the liquid supply pipe, and is then randomly sprayed into the mixing chamber through any of the plurality of openings.

2. The nozzle according to claim 1, characterized in that, The device further includes a rod component disposed between the liquid supply port and the injection port in the extension direction of the central axis, the rod component having an inclined surface whose diameter increases toward the injection port side. A fluid passage is formed between the inner circumferential surface of the housing and the inclined surface, guiding the processing liquid supplied from the liquid supply port and the compressed gas supplied from the gas supply port to the injection port.

3. The nozzle according to claim 1 or 2, characterized in that, The treatment liquid is configured to be sprayed in a mist form from the nozzle.

4. The nozzle according to claim 1 or 2, characterized in that, The processing solution is a developing solution for developing the resist film, or an etching solution for etching the body to be processed.

5. A developing apparatus for developing a resist film formed on a workpiece, the developing apparatus being characterized by comprising: Handling containers, The nozzles of any one of claims 1 to 4, disposed within the processing container A conveying mechanism within the processing container that moves the object to be processed relative to the nozzle. A developer supply device that supplies the developer solution, which is the processing liquid, to the nozzle, and a developer supply device. A compressed gas supply device that supplies the compressed gas to the nozzle.

6. The developing apparatus according to claim 5, characterized in that, The developer supply device supplies the developer, heated to above 40°C, to the nozzle.

7. The developing apparatus according to claim 5 or 6, characterized in that, The system further includes a recovery device for recovering gas containing the developer from the processing container and performing gas-liquid separation.

8. A method for processing a workpiece, characterized in that, Include: The process of forming a photosensitive resist film on the substrate. The process of exposing the resist film, The process of mixing developer supplied by the liquid supply pipe of the nozzle with compressed air using the mixing chamber of the nozzle according to claim 1, and... The process of forming a resist pattern by spraying a mixture of compressed gas and developer from the nozzle onto the exposed resist film. The developer reaching the end of the liquid supply tube collides with the diffuser plate of the nozzle and is diffused within the liquid supply tube, and is then randomly sprayed into the mixing chamber through any of the plurality of openings in the diffuser plate.

9. The processing method for the workpiece according to claim 8, characterized in that, The developing solution is sprayed in a mist from the nozzle.

10. The processing method for the workpiece according to claim 8 or 9, characterized in that, The developer is sprayed in a jet pattern that appears annular when viewed from the direction of the central axis of the jet nozzle, and whose diameter increases as it separates from the jet nozzle.

11. The processing method for the workpiece according to claim 10, characterized in that, The direction of the developer spray is inclined at an angle of less than 10° relative to the central axis.

12. The processing method for the workpiece according to claim 8 or 9, characterized in that, The process further includes a step of spraying abrasive material onto the workpiece through the resist pattern to remove a portion of the workpiece.

13. The processing method for the workpiece according to claim 8 or 9, characterized in that, The process further includes spraying an etchant from the nozzle through the resist pattern onto the workpiece to remove a portion of the workpiece.

14. The processing method for the workpiece according to claim 8 or 9, characterized in that, The process further includes the step of supplying a stripping solution to the resist pattern to remove the resist pattern from the treated body.

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