Plasma etching equipment

Abstract

The present invention discloses a plasma etching device, wherein the process chamber includes an electrode base, an electrode, and an inner liner; the cylindrical side of the inner liner covers the inner wall of the process chamber, and an insulating sleeve is provided between the two, and the annular bottom of the inner liner can be connected to the electrode base; the lower surface of the annular bottom has an inner liner mounting portion, and the upper surface of the electrode base is correspondingly provided with a first base mounting portion and a second base mounting portion that can be adapted to the inner liner mounting portion, and is configured as follows: when the inner liner mounting portion is adapted to the first base mounting portion, the lower surface of the annular bottom is in contact with the upper surface of the electrode base; when the inner liner mounting portion is adapted to the second base mounting portion, the lower surface of the annular bottom is located at a predetermined distance from the upper surface of the electrode base, and a detachable electrical connector is provided between the annular bottom and the electrode. Application of this solution can achieve good cleaning effect while ensuring uniformity and etching rate of wafer etching.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing equipment, and in particular to plasma etching equipment. Background Art

[0002] Etching is a crucial step in semiconductor integrated circuit manufacturing, with plasma etching being a common etching method. Etching typically occurs within a vacuum chamber. A mechanical electrode is placed on a susceptor in the center of the vacuum processing chamber, with the wafer positioned above the electrode. Radio frequency (RF) is applied to an electrode atop the susceptor, creating a plasma of introduced reactive gases within the chamber to process the wafer. During this process, the plasma undergoes physical and chemical reactions on the wafer surface, etching the desired shape. Simultaneously, byproducts are continuously released during this reaction. While most are removed by vacuum pumps mounted at the bottom or sides of the chamber, some byproducts can still deposit within the chamber, including on the electrode surfaces, the chamber walls, the liner, and even the bottom of the upper inlet tray. If these deposits are not promptly cleaned, the chamber environment can change over extended processing cycles, leading to inconsistent etching uniformity across the wafer and compromising equipment stability.

[0003] In the prior art, cleaning of deposits in a process chamber requires the introduction of a cleaning gas into the chamber. A radio frequency power supply connected to an electrode is used to generate a cleaning plasma that reacts with the deposited byproducts on the chamber walls, electrodes, lining, and other devices, thereby achieving dry cleaning. Figure 1 , which shows a schematic diagram of a typical existing plasma system machine.

[0004] like Figure 1 As shown, the electrode 3' is arranged on the electrode base 5' through the insulating pad 4', and the liner 6' is located around the electrode 3' and connected to the electrode base 5'. The cylindrical side wall of the liner 6' is in contact with the inner wall of the process chamber 1', which is used to protect the inner wall of the chamber 1' from being contaminated by the etching process. When the etching process is carried out, the plasma is mainly concentrated on the upper surface of the electrode 3' and the wafer 2', which can achieve a high-efficiency and concentrated etching process. However, when the cleaning process is carried out in the chamber, the liner 6' is in a grounded state, and the electrode 3' is completely exposed to the cleaning plasma. In this state, the area of ​​the electrode 3' is much smaller than the area of ​​the surrounding grounded parts, so the plasma is mainly concentrated on the upper surface of the electrode 3', causing significant damage to the surface of the electrode 3'; in addition, since there is less plasma reaching the surface of the liner 6' and the bottom surface of the upper gas distribution plate 7', the cleaning process cannot achieve a complete cleaning effect. After a long period of accumulation, these contaminated parts need to be manually removed for manual cleaning. The equipment maintenance cost is high and the equipment utilization efficiency is reduced.

[0005] In view of this, it is urgent to optimize the structure of existing plasma etching equipment to effectively improve the cleaning effect. Summary of the Invention

[0006] In order to solve the above technical problems, the present invention provides a plasma etching device, which can achieve good cleaning effect through structural optimization.

[0007] The present invention provides a plasma etching device, including a process chamber, which includes an electrode base, an electrode and a liner; wherein the electrode is arranged on the electrode base through an insulating pad; the liner includes an annular bottom and a cylindrical side portion extending upward from the outer edge of the annular bottom, the cylindrical side portion covers the inner wall surface of the process chamber, and an insulating sleeve is provided between the two, and the annular bottom can be connected to the electrode base; wherein the lower surface of the annular bottom has a liner mounting portion, and the upper surface of the electrode base is correspondingly provided with a first base mounting portion and a second base mounting portion that can be adapted to the liner mounting portion, and is configured as follows: when the liner mounting portion is adapted to the first base mounting portion, the lower surface of the annular bottom is in contact with the upper surface of the electrode base; when the liner mounting portion is adapted to the second base mounting portion, the lower surface of the annular bottom is located above the upper surface of the electrode base, with a predetermined distance between the two, and a detachable electrical connector is provided between the annular bottom and the electrode.

[0008] Optionally, the electrical connector is a double-headed stud, a first threaded hole is provided on the inner peripheral side wall of the annular bottom, and a second threaded hole is provided on the outer peripheral side wall of the electrode. When the lining mounting portion is adapted to the second base mounting portion, the first threaded hole and the second threaded hole are located on the same center line, and the external threaded sections at both ends of the double-headed stud are threadedly connected to the first threaded hole and the second threaded hole respectively.

[0009] Optionally, the first threaded hole is a countersunk threaded hole, and the hole depth thereof is configured such that the stud can be completely accommodated in the countersunk threaded hole.

[0010] Optionally, a limiting flange is provided in the middle of the stud, and the limiting flange can be pressed against the step surface of the countersunk threaded hole for limiting position.

[0011] Optionally, a process threaded hole is provided at the end of the external threaded section of the stud bolt that matches the second threaded hole, and a force-applying portion is provided on the outer peripheral surface of the limiting flange.

[0012] Optionally, the lining mounting portion is a convex column extending downward from the lower surface of the annular bottom, and the first base mounting portion is a recess adapted to the convex column. When the convex column is inserted into the recess, the lower surface of the annular bottom can be fitted with the upper surface of the electrode base.

[0013] Optionally, the boss is provided with a through hole, the bottom wall of the recess is provided with a first mounting threaded hole, and the second base mounting portion is provided with a second mounting threaded hole, and can be respectively adapted to the first mounting threaded hole or the second mounting threaded hole by threaded fasteners inserted into the through hole to fix the lining and the electrode base.

[0014] Optionally, the through hole is a countersunk hole, and the threaded fastener is a bolt or a screw.

[0015] Optionally, there are at least three lining mounting portions arranged at intervals, and there are at least three first base mounting portions and at least three second base mounting portions respectively.

[0016] Optionally, the electrical connectors are multiple and evenly distributed around the circumference.

[0017] Regarding the assembly relationship of the liner used to protect the chamber, the present invention takes a different approach and proposes a structural optimization design, which can effectively reduce the ground environment area in the chamber during the cleaning operation. Specifically, through the liner mounting portion on the lower surface of the liner annular bottom, two assembly relationships between the liner and the electrode base can be established. In the first assembly relationship, the liner mounting portion is adapted to the first base mounting portion of the electrode base. In this state, the lower surface of the liner annular bottom and the upper surface of the electrode base are in contact, which can concentrate the plasma on the electrode surface and perform concentrated etching on the wafer on the electrode surface, ensuring the uniformity of wafer etching, improving the etching rate, and reducing the consumption of plasma by other components. In the second assembly relationship, the liner mounting portion is adapted to the second base mounting portion of the electrode base. In this state, the lower surface of the liner annular bottom is located above the upper surface of the electrode base, with a predetermined spacing between the two, and a detachable electrical connector is provided between the annular bottom and the electrode. The insulating sleeve between the liner and the inner wall of the chamber can protect the sidewalls from deposits, facilitating the cleaning and maintenance of the inner wall of the chamber. It can also reduce the short circuit caused by the liner being too close to the chamber when the RF is connected. Compared with the existing technology, this solution has the following beneficial technical effects:

[0018] First, by applying this solution, when the cleaning operation is performed under the second assembly relationship, when the electrode is connected to the radio frequency, the liner can be connected to the radio frequency synchronously based on the electrical connector, that is, the liner and the electrode are both radio frequency ends, and the radio frequency area is increased. In this way, the plasma ionized during the cleaning process is absorbed by the electrode with radio frequency and the liner, especially the liner can absorb a large amount of plasma, which can not only improve its own cleaning effect, but also reduce the damage to the surface of the electrode caused by the bombardment of the cleaning plasma, thereby increasing the service life of the electrode.

[0019] Secondly, in an optional solution of the present invention, the electrical connector is a stud, and the external threaded sections at both ends are respectively threadedly connected to the inner peripheral side wall of the annular base and the outer peripheral side wall of the electrode, facilitating rapid electrical connection between the two in the second assembly relationship. Furthermore, the first threaded hole provided on the inner peripheral side wall of the annular base is a countersunk threaded hole, and its hole depth is configured to accommodate the stud in its entirety in the countersunk threaded hole. With this arrangement, in the first assembly relationship, the electrical connector used to establish the first assembly relationship can be screwed into the first threaded hole without the need for separate storage and management. On the basis of improving operability, the overall structural configuration is more reasonable and compact.

[0020] Third, in another optional solution of the present invention, a process threaded hole is provided at the end of the external threaded section of the stud that is adapted to the second threaded hole on the electrode; in this way, when preparing for the cleaning operation, the process threaded hole can be used to apply force to rotate the stud outward from the first threaded hole, and then the force-applying part configured on the outer peripheral surface of its limiting flange can be used to further screw the stud into the second threaded hole of the electrode base using a tool, which has better operability.

[0021] Fourth, in another optional embodiment of the present invention, the liner mounting portion is a protrusion extending downward from the lower surface of the annular base, and the first base mounting portion is a recessed portion adapted to fit the protrusion. Thus, when the protrusion is inserted into the recessed portion, a first assembly relationship is established for the liner, at which point the lower surface of the annular base is in contact with the upper surface of the electrode base. Furthermore, the protrusion is provided with a through-hole, and the bottom wall of the recessed portion is provided with a first mounting threaded hole, also known as a countersunk threaded hole. Correspondingly, a second mounting threaded hole is provided in the second base mounting portion. This arrangement allows threaded fasteners inserted into the through-holes to mate with either the first or second mounting threaded hole, respectively. That is, in the first assembly relationship, the protrusion is inserted into the recessed portion, centered with the first mounting threaded hole, and tightened to secure the liner and electrode base. In the second assembly relationship, the protrusion is removed from the recessed portion, aligned with the second mounting threaded hole, and tightened with the bolts to secure the liner and electrode base. This embodiment has a reasonable and reliable structural design and good operability. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1A schematic diagram of a typical plasma etching device in the prior art;

[0023] Figure 2 is a top view of the plasma etching device in a specific embodiment;

[0024] Figure 3 for Figure 2 AA section view;

[0025] Figure 4 Schematic diagram of the lining structure formed from a top perspective;

[0026] Figure 5 Schematic diagram of the lining structure formed from the bottom perspective;

[0027] Figure 6 shows a schematic structural diagram of the electrode base;

[0028] Figure 7 for Figure 2 BB cross-sectional view;

[0029] Figure 8 A schematic diagram of the assembly relationship of the plasma etching equipment shown in the specific embodiment when applied to a cleaning process;

[0030] Figure 9 shows a schematic structural diagram of an electrical connector;

[0031] Figure 10 for Figure 3 A magnified view of part I;

[0032] Figure 11 for Figure 8 Enlarged view of Part II.

[0033] Figure 1 middle:

[0034] Process chamber 1', wafer 2', electrode 3', insulating pad 4', electrode base 5', liner 6', gas uniforming plate 7';

[0035] Figure 2-Figure 11 middle:

[0036] Process chamber 1, wafer 2, electrode 3, second threaded hole 31, RF power supply 301, RF matcher 302, insulating pad 4, electrode base 5, first mounting threaded hole 51, second mounting threaded hole 52, liner 6, annular bottom 61, boss 611, circular hole 612, through hole 613, first threaded hole 614, cylindrical side 62, gas uniforming disk 7, chamber cover 8, insulating sleeve 9, electrical connector 10, first external threaded section 101, second external threaded section 102, process threaded hole 103, limit flange 104, vacuum pump 11, gas source 12. DETAILED DESCRIPTION

[0037] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0038] Without loss of generality, this embodiment uses the process chamber shown in the figure as a description basis to describe in detail the embodiment of the present invention regarding the plasma etching equipment. Figure 2 and Figure 3 ,in, Figure 2 FIG. 1 is a schematic diagram of the plasma etching device in this embodiment, which is a top view. Figure 3 for Figure 2 AA cross-sectional view.

[0039] The process chamber 1 of the plasma etching equipment is provided with a chamber cover 8 on its top, and the two are enclosed to form a receiving cavity, so that an internal vacuum area is formed under the action of a vacuum pump 11. Figure 3 As shown, electrode 3, which supports wafer 2 to be processed, is located in the center of process chamber 1. It is mounted on electrode base 5 via insulating pads 4, isolating the grounded electrode base 5 from the RF-connected electrode 3. An RF power source 301 is connected to electrode 3 via three input ports via an RF matching device 302, providing a plasma excitation source within the process chamber. It should be understood that the number of RF input ports is not limited to the three evenly distributed ones shown in the figure; the number can be selected based on the functional design requirements of the equipment.

[0040] The reaction gas provided by the gas source 12 is introduced into the process chamber 1 through the outside of the chamber cover 8, and the gas required for the process is evenly supplied to the interior of the chamber by the gas distribution plate 7 provided on the inner surface of the chamber cover 8. The gas distribution plate 7 is not the core invention of this application and can be implemented by those skilled in the art based on existing technology, so it will not be described in detail here.

[0041] In this way, after applying radio frequency to the electrode 3, the reaction gas introduced into the processing chamber forms plasma. During the process, the wafer 2 undergoes physical and chemical reactions on the surface of the plasma, and the desired shape is etched on its surface.

[0042] For example Figure 3As shown, an insulating sleeve 9 is provided between the liner 6 and the inner wall of the process chamber 1. On the one hand, it can protect the side wall from deposition and facilitate the maintenance of the cleaning of the inner wall of the chamber. On the other hand, when cleaning the RF access, it can reduce the short circuit phenomenon caused by the close distance between the liner 6 and the chamber 1. In this embodiment, the liner 6 includes an annular bottom 61 and a cylindrical side 62. The annular bottom 61 can be connected to the electrode base 5, and in the assembly relationship shown in the figure, the diameter of the through hole in the middle of the annular bottom 61 is slightly larger than the outer diameter of the insulating pad 4; the cylindrical side 62 extends upward from the outer edge of the annular bottom 61 to cover the inner wall of the process chamber 1. The "covering" here means that based on this positional relationship, the cylindrical side 62 of the liner 6 can form a good shielding protection for the inner wall of the process chamber 1.

[0043] In this embodiment, the liner 6 can establish two assembly relationships relative to the fixed electrode 3, the insulating pad 4 and the electrode base 5, which are used for the etching process and the cleaning process respectively.

[0044] exist Figure 3 In the first assembly relationship shown, the lining 6 is flush with the bottom surface of the insulating sleeve 9. From the perspective of establishing an insulating relationship, the size of the insulating sleeve 9 can be designed to be relatively larger; in other words, the bottom surface of the insulating sleeve 9 can also extend downward beyond the bottom surface of the lining 6. The flush bottom surfaces of the two are the basic configuration requirement to ensure the insulating relationship.

[0045] Please also see Figure 4 and Figure 5 , the two figures respectively show the overall structure of the liner 6; wherein, Figure 4 From the top perspective of the lining, Figure 5 Formed from the bottom perspective of the liner.

[0046] Combine Figure 4 and Figure 5 As shown, the lower surface of the annular bottom 61 of the liner 6 has a downwardly extending protrusion 611, which serves as a liner mounting portion for changing the assembly relationship of the liner 6. The number of the protrusions 611 can be determined as needed, for example but not limited to the four protrusions 611 shown in the figure.

[0047] The annular bottom 61 is provided with a plurality of circular holes 612, the main function of which is to ensure uniform flow. Figure 3 As shown, when the vacuum pump 11 disposed at the bottom of the process chamber 1 evacuates the interior of the chamber, the air flow can flow down evenly through the multiple circular holes 612 .

[0048] Please also see Figure 6 , which shows a schematic diagram of the overall structure of the electrode base, and specifically shows two base mounting parts adapted to the boss 611.

[0049] Combine Figure 3 and Figure 6 As shown, the electrode base 5 has an inner recess for accommodating the electrode 3 and the insulating pad 4, and is provided with three RF access adapters at the bottom. Corresponding to each boss 611, a first mounting threaded hole 51 and a second mounting threaded hole 52 are provided on the upper surface of the side wall of the electrode base 5. The two threaded holes are arranged at intervals in the circumferential direction. Among them, the first mounting threaded hole 51 is a countersunk threaded hole. In the first assembly relationship, the boss 611 of the liner 6 is inserted into the countersunk of the countersunk threaded hole. Please refer to Figure 7 , the figure is Figure 2 The countersunk portion of the countersunk threaded hole is the first base mounting portion that can accommodate and adapt to the corresponding boss 611.

[0050] In this solution, a through hole 613 is opened at the position of the boss 611, and a threaded fastener (not shown in the figure) threadedly inserted into the through hole 613 is screwed to the first mounting threaded hole 51, and the lower surface of the annular bottom 61 is fitted with the upper surface of the electrode base 5. In this state, the equipment can be used to perform the etching process.

[0051] For example Figure 5 and Figure 6 As shown, when the boss 611 located on the lower surface of the annular bottom 61 of the liner 6 is adapted to the second mounting threaded hole 52, that is, compared with the first assembly relationship, when the liner 6 is rotated relative to the electrode base 5 until the boss 611 is aligned with the second mounting threaded hole 52, the boss 611 presses against the upper surface of the electrode base 5, and the liner 6 and the electrode base 5 are fixed by tightening with a threaded fastener, thereby establishing the second assembly relationship. Here, the threaded fastener can be a bolt or a screw.

[0052] Corresponding to the bosses 611, this embodiment is provided with groups of first and second threaded mounting holes 51 and 52. In other words, this embodiment employs four bosses 611 and four groups of first and second threaded mounting holes 51 and 52. It is understood that the number of bosses serving as the liner mounting portion can be three or more spaced apart. Of course, a corresponding number of first and second threaded mounting holes 51 and 52 should be provided in groups corresponding to the number of bosses provided.

[0053] Please also see Figure 8 This figure illustrates the assembly of the liner in a second assembly relationship. As shown, the lower surface of the annular base 61 is positioned above the upper surface of the electrode base 5, with a predetermined spacing T between them. A removable electrical connector 10 is provided between the annular base 61 and the electrode 3. In this second assembly relationship, the plasma etching apparatus can be used in cleaning processes.

[0054] In this embodiment, in the two assembly relationships between the liner 6 and the electrode base 5, the boss 611 serves as the liner mounting portion on the liner 6 side, and the first mounting threaded hole 51 and the second mounting threaded hole 52 serve as the first base mounting portion and the second base mounting portion on the electrode base 5 side. In other specific implementations, the boss and the two corresponding mounting threaded holes can also be configured in reverse, that is, the boss is located on the electrode base and the two mounting threaded holes are located on the liner (not shown in the figure), which can also meet the functional requirements of establishing separate assembly relationships.

[0055] It should be noted that the liner mounting portion, the first base mounting portion, and the second base mounting portion used to establish the above-mentioned two assembly relationships may also be implemented in other structural forms. It should be understood that as long as they are suitable for etching processes in the first assembly relationship and suitable for cleaning processes in the second assembly relationship, they are within the scope of protection requested by this application.

[0056] Furthermore, for the detachable electrical connector 10, its installation structure can be further optimized. For example, but not limited to, the electrical connector 10 is a stud bolt, see Figure 9 , which shows a schematic structural diagram of an electrical connector. Both ends of the stud have external thread sections: a first external thread section 101 and a second external thread section 102.

[0057] like Figure 4 and Figure 5 As shown, a first threaded hole 614 is provided on the inner peripheral side wall of the annular bottom 61 of the liner 6, and a second threaded hole 31 is provided on the outer peripheral side wall of the electrode 3. The external thread sections at both ends of the double-headed stud are threadedly connected with the first threaded hole 614 and the second threaded hole 31 respectively, so as to facilitate rapid electrical connection between the two in the second assembly relationship.

[0058] On the basis of improving operability and in order to take into account effective management of components, preferably, the first threaded hole 614 is a countersunk threaded hole, and its hole depth is configured such that the stud bolt (10) can be completely accommodated in the countersunk threaded hole.

[0059] Please also see Figure 3 and Figure 10 ,in, Figure 10 for Figure 3 An enlarged view of part I. Figure 3 In the first assembly relationship shown, the electrical connector 10 used to establish the first assembly relationship can be screwed into the first threaded hole 614 without the need for additional storage and management.

[0060] Please also see Figure 8 and Figure 11 ,in, Figure 11 for Figure 8 The enlarged view of part II. Figure 8In the second assembly relationship shown, the electrical connector 10 can be rotated to remove a portion of the length from the first threaded hole 614 without disconnecting the connection between the two. Figure 11 The assembly relationship shown is to establish an electrical connection between the liner 6 and the electrode 3. When the electrode 3 is connected to the radio frequency, based on the electrical connection between the liner 6 and the electrode 3, the liner 6 is also connected to the radio frequency.

[0061] In addition, in order to facilitate the application of force to rotate the electrical connector 10, Figure 9 As shown, a process threaded hole 103 is provided at the end of the second external threaded section 102 of the stud. In other words, the process threaded hole 103 is provided at the end of the external threaded section of the stud that is adapted to the second threaded hole 31. In this way, when preparing for the cleaning operation, the process threaded hole 103 can be used to apply force to rotate the stud outward from the first threaded hole 614.

[0062] Figure 9 The stud bolt has a limiting flange 104 in the middle, which can be abutted against the stepped surface of the countersunk threaded hole (614) to limit the position. In addition, the outer peripheral surface of the limiting flange 104 is provided with a force-applying portion, i.e., a force-applying surface suitable for a wrench or the like. Based on the force-applying portion configured on the outer peripheral surface of the limiting flange 104, the stud bolt can be further operated and rotated using a tool, which has good operability.

[0063] It should be noted that the present solution is provided with four circumferentially evenly distributed electrical connectors 10 , so that the cleaning plasma gas can be evenly formed in the chamber to obtain a good cleaning effect.

[0064] The following briefly describes the operating principles of the plasma etching equipment for performing etching and cleaning processes.

[0065] (1) Performing an etching process.

[0066] During the etching process, the liner 6 adopts the grounding mode, i.e. Figure 3 At this time, the liner 6 is connected to the electrode base 5, which allows the plasma formed by the introduced reaction gas to be concentrated on the surface of the electrode 3, thereby etching the wafer on the surface of the electrode 3, increasing the etching rate and reducing the consumption of plasma by other components.

[0067] (2) Execute the cleaning process.

[0068] After a period of etching process, the surface of the chamber inner wall including the electrode 3, the liner 6 and the uniform gas plate 7 will be covered with a certain amount of by-products. Figure 8The second assembly relationship shown is shown. The liner 6 is connected to the electrode 3, both of which are RF terminals. The RF area is increased, and the cleaning plasma formed in the chamber by the RF-carrying electrode 3 and the liner 6 is absorbed. In particular, the liner 6 can absorb a large amount of plasma, which not only improves its own cleaning effect, but also reduces damage to the surface of the electrode 3 caused by the cleaning plasma bombardment, thereby increasing the service life of the electrode. At the same time, it can also attract the cleaning plasma to a position closer to the bottom of the upper gas uniformity disk 7, thereby improving the cleaning effect of the gas uniformity disk 7.

[0069] The ordinal numbers "first" and "second" used herein are only used to describe components or structures with the same function in the technical solution. It is understood that the use of the ordinal numbers "first" and "second" does not constitute an understanding of the technical solution claimed in this application.

[0070] It should be noted that the above-mentioned embodiments provided in this embodiment, in which the functions of the vacuum pump 11, the gas uniforming disk 7, the gas source 12, the RF power supply 301, the RF matcher 302, etc. are not the core invention points of this application. Those skilled in the art can implement them based on the existing technology, so they will not be described in detail in this article.

[0071] The above are only preferred embodiments of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A plasma etching device, comprising a process chamber, characterized in that: The process chamber includes: Electrode base; An electrode is arranged on the electrode base through an insulating pad; The liner comprises an annular bottom and a cylindrical side portion extending upward from the outer edge of the annular bottom, the cylindrical side portion covering the inner wall surface of the process chamber, and an insulating sleeve is provided between the annular bottom and the electrode base; the lower surface of the annular bottom has a liner mounting portion, and the upper surface of the electrode base is correspondingly provided with a first base mounting portion and a second base mounting portion that can adapt to the liner mounting portion; Wherein, when the lining mounting portion is adapted to the first base mounting portion, the configuration is as follows: the lower surface of the annular bottom is in contact with the upper surface of the electrode base; Among them, when the lining mounting portion is adapted to the second base mounting portion, the configuration is as follows: the lower surface of the annular bottom is located above the upper surface of the electrode base, with a predetermined distance between the two, and a detachable electrical connector is provided between the annular bottom and the electrode.

2. The plasma etching equipment according to claim 1, characterized in that: The electrical connector is a double-headed stud, a first threaded hole is provided on the inner peripheral side wall of the annular bottom, and a second threaded hole is provided on the outer peripheral side wall of the electrode; when the lining mounting portion is adapted to the second base mounting portion, the first threaded hole and the second threaded hole are located on the same center line, and the external thread sections at both ends of the double-headed stud are threadedly connected to the first threaded hole and the second threaded hole respectively.

3. The plasma etching equipment according to claim 2, characterized in that: The first threaded hole is a countersunk threaded hole, and the hole depth thereof is configured such that the stud can be completely accommodated in the countersunk threaded hole.

4. The plasma etching equipment according to claim 3, characterized in that: A limiting flange is provided in the middle of the stud bolt, and the limiting flange can be pressed against the step surface of the countersunk threaded hole for limiting position.

5. The plasma etching equipment according to claim 4, characterized in that: A process threaded hole is provided at the end of the external threaded section of the stud bolt adapted to the second threaded hole, and a force-applying portion is provided on the outer peripheral surface of the limiting flange.

6. The plasma etching equipment according to any one of claims 1 to 5, characterized in that: The lining mounting portion is a convex column extending downward from the lower surface of the annular bottom, and the first base mounting portion is a recess adapted to the convex column. When the convex column is inserted into the recess, the lower surface of the annular bottom can fit with the upper surface of the electrode base.

7. The plasma etching equipment according to claim 6, characterized in that: The boss is provided with a through hole, the bottom wall of the recess is provided with a first mounting threaded hole, and the second base mounting portion is provided with a second mounting threaded hole, and can be respectively adapted to the first mounting threaded hole or the second mounting threaded hole by threaded fasteners inserted into the through hole to fix the lining and the electrode base.

8. The plasma etching equipment according to claim 7, characterized in that: The through hole is a countersunk hole, and the threaded fastener is a bolt or a screw.

9. The plasma etching equipment according to claim 1, characterized in that: There are at least three lining mounting portions arranged at intervals, and there are at least three first base mounting portions and at least three second base mounting portions respectively.

10. The plasma etching equipment according to claim 1, characterized in that: There are multiple electrical connectors evenly distributed around the circumference.

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