Substrate processing method and substrate processing apparatus

Abstract

The present inventive concept provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes a temperature stabilization step for stabilizing a temperature of a substrate to a process temperature in a processing space for processing the substrate, a pressure stabilization step for stabilizing a pressure of a plasma space in which plasma is generated and a pressure of the processing space to a process pressure, the plasma space being in fluid communication with the processing space, and a processing step for generating plasma in the plasma space and processing the substrate using the plasma.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0150989, filed with the Korean Intellectual Property Office on November 5, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate processing method and a substrate processing apparatus. Background Technology

[0004] In the manufacture of semiconductor devices, desired patterns are formed on a substrate (such as a wafer) using various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition. Such processes for manufacturing semiconductor devices may include etching processes for removing films formed on the substrate. In an etching process, plasma and / or an etchant are applied to a film (e.g., a film comprising Si, SiO2, Si3N4, or polycrystalline silicon) formed on the substrate (such as a wafer) to etch the film.

[0005] As semiconductor devices become increasingly integrated, high levels of process precision are required. To accurately execute the aforementioned etching process, it is crucial to generate plasma or etchant according to a pre-defined process formulation. Furthermore, to ensure uniformity during substrate processing, the substrate temperature needs to be stabilized at the process temperature. Summary of the Invention

[0006] The present invention provides a substrate processing method and a substrate processing apparatus for effectively processing substrates.

[0007] The present invention provides a substrate processing method and a substrate processing apparatus for effectively removing films formed on a substrate.

[0008] The present invention provides a substrate processing method and apparatus for etching films formed on a substrate without particulate contamination due to process byproducts.

[0009] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0010] The present invention provides a substrate processing method. This substrate processing method includes: a temperature stabilization step for stabilizing the temperature of the substrate to a process temperature in a processing space used to process the substrate; a pressure stabilization step for stabilizing the pressure of a plasma space generating plasma and the pressure of the processing space to a process pressure, wherein the plasma space and the processing space are in fluid communication; and a processing step for generating plasma in the plasma space and using the plasma to process the substrate.

[0011] In the implementation, the temperature stabilization step includes heating the substrate in the processing space via a chuck supporting the substrate, and increasing the pressure of the processing space to the process pressure by supplying gas to the processing space.

[0012] In the implementation scheme, during the process of introducing plasma from plasma space to processing space, ions of plasma generated in plasma space are collected by an ion barrier positioned between plasma space and processing space.

[0013] In the implementation scheme, the pressure stabilization step includes: supplying an inert gas to the plasma space; and supplying a first gas different from the inert gas to a mixing space disposed between the plasma space and the processing space.

[0014] In one embodiment, the substrate processing method further includes performing an ignition step between the pressure stabilization step and the processing step to form a plasma atmosphere in the plasma space.

[0015] In the implementation, the ignition step includes supplying an inert gas to the plasma space, and the processing step includes: supplying a second gas different from the inert gas to the plasma space; and supplying a first gas different from the inert gas to a mixing space disposed between the plasma space and the processing space.

[0016] In the implementation scheme, the first gas is a gas containing hydrogen, and the second gas is a gas containing fluorine.

[0017] In one embodiment, the substrate treatment method further includes a first discharge step for discharging the treatment space after the treatment step.

[0018] In an implementation scheme, the substrate processing method further includes: a purging step for supplying purging gas to the processing space after a first discharge step; and a second discharge step for discharging the processing space after the purging step.

[0019] In the implementation plan, the pressure in the treatment space during the purging step is greater than the pressure in the treatment space during the treatment step.

[0020] This invention provides a substrate processing method using plasma. The plasma-based substrate processing method includes: an introduction step for introducing a substrate into a processing space of a substrate processing apparatus, the substrate processing apparatus including a processing space and a plasma space for generating plasma, the processing space and the plasma space being in fluid communication with each other; a temperature stabilization step for stabilizing the temperature of the substrate introduced into the processing space to a preset process temperature; a pressure stabilization step for stabilizing the pressure of the plasma space and the pressure of the processing space to a process pressure; and a processing step for processing the substrate using plasma.

[0021] In one implementation, the temperature stabilization step includes heating the substrate in the processing space via a chuck supporting the substrate, and increasing the pressure of the processing space to the process pressure by supplying inert gas to the processing space.

[0022] In one embodiment, during the flow of ions from the plasma space to the mixing space, the ions generated in the plasma space are collected by an ion blocker positioned between the mixing space and the plasma space, which is located at the substrate processing apparatus and placed between the processing space and the plasma space.

[0023] In an embodiment, the substrate processing method further includes an ignition step between a pressure stabilization step and a processing step, the ignition step being used to form a plasma atmosphere in a plasma space, wherein the pressure stabilization step and the ignition step include: supplying a first gas to a mixing space; and supplying an inert gas to the plasma space.

[0024] In the implementation scheme, the processing steps include: supplying a first gas to the mixing space; and supplying a second gas, different from the first gas, to the plasma space.

[0025] In the implementation scheme, the first gas is a gas containing NH3, and the second gas is a gas containing NH3.

[0026] In an implementation scheme, the substrate processing method further includes: a first discharge step for discharging a processing space after a processing step; a purging step for supplying purging gas to the processing space after the first discharge step; and a second discharge step for discharging the processing space after the purging step, wherein the pressure of the processing space in the purging step is greater than the pressure of the processing space in the processing step.

[0027] This invention provides a substrate processing apparatus. The substrate processing apparatus includes: a housing defining a processing space; a chuck supporting and heating a substrate within the processing space; electrodes configured to generate plasma in a plasma space in fluid communication with the processing space; a power module configured to apply power to the electrodes; an ion blocker positioned between the plasma space and the processing space and collecting ions from the plasma generated in the plasma space; a nozzle positioned between the ion blocker and the processing space, the nozzle and the ion blocker defining a mixing space disposed between the processing space and the plasma space; a gas supply unit configured to supply gas to the plasma space or the mixing space; an exhaust unit configured to exhaust the atmosphere of the processing space; and a controller, wherein the controller controls the chuck to heat the substrate to a process temperature; controls the gas supply unit and the exhaust unit to stabilize the pressure in the processing space to a preset process pressure; and controls the power module to generate plasma in the plasma space after the pressure in the processing space has stabilized to the process pressure and after the temperature of the substrate placed on the chuck has stabilized to the process temperature.

[0028] In the implementation, the controller controls the gas supply unit to supply gas to the processing space and increases the pressure of the processing space once the temperature of the substrate has stabilized at the process temperature.

[0029] In the implementation, the controller: (a) controls the power module and the gas supply unit, so that the gas supply unit supplies inert gas to the plasma space and is used to form an electric field in the plasma space after the temperature of the substrate and the pressure of the processing space have stabilized; and (b) controls the power module and the gas supply unit, so that after the electric field is formed and a predetermined time has elapsed, plasma is generated by supplying a gas including fluorine to the plasma space.

[0030] According to the embodiments conceived in this invention, the substrate can be processed effectively.

[0031] Furthermore, according to the embodiments conceived in this invention, the film formed on the substrate can be effectively removed.

[0032] According to embodiments of the present invention, films formed on substrates can be etched without particulate contamination caused by process byproducts.

[0033] The effects of the present invention are not limited to the above-described technical objectives, and other effects not mentioned in the following description will become apparent to those skilled in the art. Attached Figure Description

[0034] Referring to the following figures, the above and other objects and features will become apparent from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the figures, and in the figures:

[0035] Figure 1 A substrate processing apparatus according to an embodiment of the present invention is shown.

[0036] Figure 2 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided.

[0037] Figure 3 To display Figure 2 The substrate processing method includes a graph showing the temperature change of the substrate at each step, the pressure change of the processing space at each step, whether an inert gas is supplied at each step, whether a first gas is supplied at each step, and whether a second gas is supplied at each step.

[0038] Figure 4 The execution was shown Figure 2 A substrate processing apparatus for a temperature stabilization step.

[0039] Figure 5 The execution was shown Figure 2 A substrate processing apparatus for pressure stabilization steps.

[0040] Figure 6 The execution was shown Figure 2 The substrate processing apparatus for the ignition step.

[0041] Figure 7 The execution was shown Figure 2 The substrate processing apparatus for the processing steps.

[0042] Figure 8 The execution was shown Figure 2 The substrate processing apparatus for the first discharge step.

[0043] Figure 9 The execution was shown Figure 2 The substrate processing apparatus for the purging step.

[0044] Figure 10 The execution was shown Figure 2 The substrate processing apparatus for the second emission step. Detailed Implementation

[0045] The inventive concept can be modified in various ways and can take many forms, and specific embodiments thereof will be shown and described in detail in the accompanying drawings. However, embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions contained within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies will be omitted where such obscurity is unnecessarily made unclear about the essence of the inventive concept.

[0046] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that, as used herein, the terms “comprise” and / or “include” indicate the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more associated listed items. Furthermore, the term “embodiment” is intended to refer to an embodiment or example.

[0047] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe different elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms unless otherwise stated. These terms are used only to distinguish one element, component, region, layer, and / or segment from another. Therefore, the first element, first component, first region, first layer, or first segment discussed below may be referred to as a second element, second component, second region, second layer, or second segment without departing from the teachings of the inventive concept.

[0048] It should be understood that when a component or layer is referred to as "on another component or layer," "connected to another component or layer," "coupled to another component or layer," or "covering another component or layer," the component or layer may be directly on, connected to, coupled to, or cover the other component or layer, or there may be intermediate components or layers. Conversely, when a component is referred to as "directly on another component or layer," "directly connected to another component or layer," or "directly coupled to another component or layer," there are no intermediate components or layers. Other terms such as "between," "adjacent," "close to," etc., should be interpreted in the same manner.

[0049] Unless otherwise defined, all terms used herein (including technical or scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept pertains. Unless expressly defined in this application, terms such as those defined in common dictionaries should be interpreted as consistent with the content of the relevant art, rather than as ideal or overly formal.

[0050] In the following text, reference will be made to Figures 1 to 10 An implementation scheme of the present invention is described.

[0051] Figure 1 A substrate processing apparatus according to an embodiment of the present invention is illustrated schematically. (Refer to...) Figure 1 According to an embodiment of the present invention, the substrate processing apparatus 10 can process a substrate W. The substrate processing apparatus 10 can use plasma to process the substrate W. The substrate processing apparatus 10 can use plasma to remove thin films formed on the substrate W. For example, the substrate processing apparatus 10 can supply an etchant to the substrate W to remove the thin films formed on the substrate W. For example, the substrate processing apparatus 10 can remove thin films including silicon (Si) formed on the substrate W. For example, the substrate processing apparatus 10 can etch a substrate having Si, SiO2, Si3N4, and polycrystalline silicon films without particulate contamination. The substrate W can be a wafer.

[0052] The substrate processing apparatus 10 may include a housing 100, a chuck 200, a nozzle 300, a heating element 400, an ion blocker 500, an insulating element DR, an electrode unit 600, gas supply units 700 and 800, an emission unit 900, and a controller 1000.

[0053] The housing 100 and the nozzle 300 can be coupled to each other to define a processing space A1 (an exemplary first space) in which the substrate W is processed. The ion blocker 500, the insulating member DR, and the top electrode 601 can be coupled to each other to define a plasma space A2 (an exemplary second space) in which plasma P is generated. Furthermore, the nozzle 300, the heating member 400, and the ion blocker 500 can be coupled to each other to define a mixing space A3 (an exemplary third space) in which ion-free (i.e., neutral gas (group)) plasma and a first process gas G1 supplied by the first gas supply unit 700 are mixed together. The third space A3 is disposed between the first space A1 and the second space A2, and is in fluid communication with both the first space A1 and the second space A2. The components involved in defining the processing space A1, the plasma space A2, and the mixing space A3 can be collectively referred to as chambers. Furthermore, the processing space A1 and the mixing space A3 can be in fluid communication with each other. Furthermore, the mixing space A3 and the plasma space A2 can be in fluid communication with each other. Furthermore, the plasma space A2 and the processing space A1 can be fluidly connected to each other through the mixing space A3.

[0054] The housing 100 may define a processing space A1. For example, the combination of the housing 100 and the nozzle 300 may define the processing space A1. The housing 100 may have a container shape with an open top. The inner wall of the housing 100 may be coated with a material capable of preventing neutral gases (groups), plasma (P), or etchants (E) described later from etching the inner wall of the housing. For example, the inner wall of the housing 100 may be coated with a dielectric film such as ceramic. Furthermore, the housing 100 may be grounded. In addition, a door (not shown) may be installed in the housing 100 to allow the substrate W to be fed into or removed from the processing space A1. The door may be selectively opened and closed. Furthermore, a temperature control member (not shown) for regulating the temperature of the housing 100 may be provided in the inner wall of the housing 100. The temperature of the housing 100 may be regulated to approximately 0°C to 200°C by the temperature control member (not shown).

[0055] The chuck 200 can support the substrate in the processing space A1. The chuck 200 can heat the substrate W. In addition, the chuck 200 can be an electrostatic chuck (ESC) capable of clamping the substrate W using electrostatic force. The chuck 200 may include a support plate 210, an electrostatic electrode 220, and a heater 230.

[0056] Support plate 210 can support substrate W. Support plate 210 can have a support surface for supporting substrate W. Support plate 210 can be configured as a dielectric. For example, support plate 210 can be made of ceramic material. First electrode 220 can be disposed in support plate 210. Electrostatic electrode 220 can be disposed at a position overlapping substrate W when viewed from above. For example, a large portion of electrostatic electrode 220 can overlap substrate W. When power is applied to electrostatic electrode 220, electrostatic electrode 220 can form an electric field through electrostatic force capable of holding substrate W. The attractive force generated by the electric field can hold substrate W in the direction toward support plate 210.

[0057] Furthermore, the substrate processing apparatus 10 (e.g., chuck 200) may include first power modules 222 and 224 for applying power to the electrostatic electrode 220. The first power modules 222 and 224 may include an electrostatic electrode power supply 222 and an electrostatic electrode switch 224. Power can be applied to the electrostatic electrode 220 according to the on / off state of the electrostatic electrode switch 224. When power is applied to the electrostatic electrode 220, the substrate W can be clamped onto the chuck 200 by electrostatic force.

[0058] Heater 230 can heat substrate W. Heater 230 can heat substrate W by increasing the temperature of support plate 210. Furthermore, heater 230 can generate heat when power is applied to it. Heater 230 can be a heating element such as tungsten. However, the type of heater 230 is not limited to this, and various modifications can be made to known heaters. For example, heater 230 can control the temperature of support plate 210 from 0°C to 110°C.

[0059] Furthermore, the substrate processing apparatus 10 (e.g., chuck 200) may include second power modules 232 and 234 that apply power to the heater 230. The second power modules 232 and 234 may include a heater power supply 232 and a heater power switch 234. Power can be applied to the heater 230 according to the on / off state of the heater power switch 234.

[0060] The nozzle 300 can be disposed on top of the housing 100. For example, the nozzle 300 covers the top of the housing 100, thereby defining the upper limit of the processing space A1. The nozzle 300 can be disposed between the ion barrier 500 (described later) and the processing space A1. The nozzle 300 can be disposed between the mixing space A3 and the processing space A1, for example, the nozzle 300 can define the boundary between the mixing space A3 and the processing space A1. The nozzle 300 can be grounded. Furthermore, a plurality of holes 302 can be formed at the nozzle 300. The holes 302 can be formed to extend from the top surface to the bottom surface of the nozzle 300. That is, the holes 302 can be formed through the nozzle 300. The holes 302 can indirectly fluidly communicate the processing space A1 with the plasma space A2 (described later). Furthermore, the holes 302 can fluidly communicate the processing space A1 with the mixing space A3 (described later).

[0061] Furthermore, a gas inlet 304 can be formed at the nozzle 300. The gas inlet 304 can be connected to a second gas line 706, which will be described below. The gas inlet 304 can be configured to supply the first process gas G1 to the mixing space A3. The gas inlet 304 can be configured to supply the first process gas G1 to the edge region of the mixing space A3. The gas inlet 304 can be configured such that the gas discharge direction faces the mixing space A3 (and indirectly the plasma space A2), but not the processing space A1.

[0062] The heating element 400 can be positioned above the nozzle 300. When viewed from above, the heating element 400 can have an annular shape, resembling a ring heater. The heating element 400 can generate heat to increase the temperature of the mixing space A3, allowing the plasma P from which ions have been removed and the first process gas G1 to mix more effectively.

[0063] The ion blocker 500 can separate the plasma space A2 and the mixing space A3 (and further, indirectly separate the plasma space A2 and the processing space A1). The ion blocker 500 can be disposed between the top electrode 601 and the processing space A1. Furthermore, the ion blocker 500 can be disposed between the processing space A1 and the plasma space A2.

[0064] An ion blocker 500 may be disposed on top of the heating element 400. The ion blocker 500 may be grounded. The ion blocker 500 may be grounded to remove (or collect) ions contained in plasma P, which is generated in plasma space A2 and flows into mixing space A3 and further into processing space A1. The ion blocker 500 may be disposed in the flow path of plasma P, which is generated in plasma space A2 and flows towards processing space A1. In short, since plasma P generated in plasma space A2 passes through ion blocker 500 to reach mixing space A3, plasma P reaching mixing space A3 may substantially contain only neutral gas (clumps) without ions.

[0065] Furthermore, the ion barrier 500 can be grounded and used as an electrode opposite to the top electrode 601 described later. A plurality of through-holes 502 are formed at the ion barrier 500. The through-holes 502 can be formed through the ion barrier 500. The through-holes 502 can fluidly communicate the plasma space A2 with the mixing space A3. The through-holes 502 can fluidly communicate the plasma space A2 with the processing space A1.

[0066] Furthermore, a gas supply port 504 may be formed at the ion blocker 500. The gas supply port 504 may be connected to a first gas line 704, which will be described below. The gas supply port 504 may be configured to supply process gas to the mixing space A3. The gas supply port 504 may be configured such that the gas discharge direction faces the mixing space A3 (and indirectly the processing space A1), but not the plasma space A2.

[0067] Electrode unit 600 can generate plasma P in plasma space A2. Electrode unit 600 may include top electrode 601 and top power modules 602 and 604.

[0068] The top electrode 601 may have a plate shape. The top electrode 601 can generate plasma. Top power modules 603 and 604 can supply power to the top electrode 601. Top power modules 603 and 604 may include a top power supply 603 as an RF source and a top power switch 604. Power can be applied to the top electrode 601 depending on whether the top power switch 604 is on or off. When power is applied to the top electrode 601, an electric field is formed between the ion blocker 500, which serves as a counter electrode, and the top electrode 601, so that the second process gas G2 and / or inert gas IG, described later, can be excited in the plasma space A2. Therefore, plasma P can be generated. Furthermore, a gas injection port 02 can be formed at the top electrode 601. The second gas supply unit 800, described later, can supply the second process gas G2 or inert gas IG to the plasma space A2 through the gas injection port 602. Furthermore, an insulating member DR, provided as an insulating material, can be disposed between the top electrode 601 and the ion blocker 500. When viewed from above, the insulating member DR can have a ring shape.

[0069] Gas supply units 700 and 800 can supply gas. Gas supply units 700 and 800 may include a first gas supply unit 700 and a second gas supply unit 800.

[0070] The first gas supply unit 700 can supply a first process gas G1 to the mixing space A3. When plasma P (i.e., a neutral gas (group)) from which ions are removed by the ion barrier 500 is introduced into the mixing space A3, the first gas supply unit 700 can supply the first process gas to the mixing space A3. The first gas supply unit 700 can supply the first process gas G1, which includes nitrogen and hydrogen. The first gas supply unit 700 may include a first gas supply source 701, a main gas line 703, a first gas line 704, and a second gas line 706. The first gas supply source 701 can store and / or supply the first process gas G1. One end of the main gas line 703 can be connected to the first gas supply source 701, and the other end of the main gas line 703 can branch to the first gas line 704 and the second gas line 706. The first gas line 704 can be connected to the gas supply port 504 of the aforementioned ion barrier 500. In addition, the second gas line 706 can be connected to the gas inlet 304 of the aforementioned nozzle 300.

[0071] The first process gas G1 supplied by the first gas supply unit 700 may be at least one selected from the group consisting of He, Ar, Xe, NH3, H2, N2, O, NF3, and F2. For example, the first process gas G1 may be a gas including NH3.

[0072] The second gas supply unit 800 can supply the second process gas G2 to the plasma space A2. Additionally, the second gas supply unit 800 can supply inert gas IG to the plasma space A2. The second gas supply unit 800 can inject the second process gas G2 or inert gas IG into the plasma space A2 to supply the second process gas G2 or inert gas IG to the mixing space A3 and the processing space A1. The second gas supply unit 800 may include a 2-1 gas supply source 801, a first gas channel 803, a 2-2 gas supply source 805, and a second gas channel 807.

[0073] 2-1 Gas supply source 801 can store and / or supply the second process gas G2. A first gas passage 803 can be connected to 2-1 gas supply source 801 to supply the second process gas G2 supplied from 2-1 gas supply source 801 to the plasma space A2. 2-1 gas supply source 801 can supply the second process gas G2, comprising fluorine or hydrogen, to the plasma space A2. For example, the second process gas G2 can be a gas comprising at least one of NF3, H2, or combinations thereof. For example, the second process gas G2 can be a gas comprising NF3.

[0074] The 2-2 gas supply source 805 can store and / or supply inert gas IG. A second gas channel 807 can be connected to the 2-2 gas supply source 805 to supply inert gas IG supplied from the 2-2 gas supply source 805 to the plasma space A2. The 2-2 gas supply source 805 can be a gas in the plasma space A2 comprising at least one of He, Ar, Xe, N2, or combinations thereof. For example, the inert gas IG can be a gas containing He.

[0075] The discharge unit 900 can discharge gases, process byproducts, etc., supplied to the processing space A1. The discharge unit 900 can regulate the pressure of the processing space A1. The discharge unit 900 can indirectly regulate the pressure of the mixing space A3 and the plasma space A2 by regulating the pressure of the processing space A1. The discharge unit 900 can discharge the atmosphere of the processing space A2 to regulate the pressure of the processing space A1, and discharge gases supplied to the processing space A1, byproducts, etc., generated during the processing of the substrate W, to the outside of the substrate processing apparatus 10. The discharge unit 900 may include a pressure reducing member 902 and a pressure reducing line 904. The pressure reducing member 902 may be a pump. However, the inventive concept is not limited thereto, and it can be modified in various ways to provide pressure reduction using known devices.

[0076] The controller 1000 can control the substrate processing apparatus 10, and in particular the components of the substrate processing apparatus 10. For example, the controller 1000 can control the gas supply units 700 and 800, the first power modules 222 and 224, the second power modules 232 and 234, the pressure reducing member 902, and the top power modules 602 and 604.

[0077] The controller may include a process controller comprising: a microprocessor (computer) that controls the substrate processing apparatus; a user interface, such as a keyboard, through which an operator inputs commands to manage the substrate processing apparatus; a display showing the operating status of the substrate processing apparatus; and a storage unit that stores a treatment recipe (i.e., control program) for executing the processing process of the substrate processing apparatus by controlling the process controller based on data and processing conditions, or stores programs for executing components of the substrate processing apparatus. Furthermore, the user interface and storage unit may be connected to the process controller. The treatment recipe may be stored in a storage medium in the storage unit, and this storage medium may be a hard disk, a portable hard disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0078] Hereinafter, a substrate processing method according to an embodiment of the present invention will be described. The substrate processing method described below can be performed by the substrate processing apparatus 10 described above. Furthermore, in order to perform the substrate processing method described below, the controller 1000 can control the components of the substrate processing apparatus 10.

[0079] Figure 2 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided, and Figure 3 To illustrate the execution Figure 2 In the case of the substrate processing method, a graph is generated based on the changes in substrate temperature at each step, the changes in processing space pressure at each step, whether an inert gas is supplied at each step, whether a first gas is supplied at each step, and whether a second gas is supplied at each step. Figure 3 In this context, T refers to the temperature of the substrate W, P refers to the pressure of the processing space A1, IG can refer to the inert gas supplied from the plasma space A2 to the processing space A1, G1 can refer to the first process gas supplied from the first gas supply unit 700, and G2 can refer to the second process gas supplied by the second gas supply unit 800.

[0080] Reference Figure 2 and Figure 3The substrate processing method according to an embodiment of the present invention may include an introduction step S10, a temperature stabilization step S20, a pressure stabilization step S30, an ignition step S40, a processing step S50, a first emission step S60, a purging step S70, a second emission step S80, and a removal step S90.

[0081] During the temperature stabilization step S20, pressure stabilization step S30, ignition step S40, treatment step S50 and purging step S70, the pressure of the treatment space A1 can be adjusted to approximately 1 Torr to 10 Torr.

[0082] Furthermore, during the introduction step S10, temperature stabilization step S20, pressure stabilization step S30, ignition step S40, treatment step S50, first emission step S60, purging step S70, second emission step S80, and removal step S90, the temperature of the support plate 210 can be adjusted to 0°C to 110°C.

[0083] Furthermore, during the introduction step S10, temperature stabilization step S20, pressure stabilization step S30, ignition step S40, processing step S50, first emission step S60, purging step S70, second emission step S80, and removal step S90, the temperature of the components of the housing 100 and other components of the substrate processing apparatus 10 can be adjusted to 0-200°C.

[0084] The introduction step S10 (~t0) can be a step of introducing the substrate W into the processing space A1. In the introduction step S10, the opening installed in the housing 100 and used as an inlet / outlet is opened, and a transfer robot (not shown) can introduce the substrate W into the processing space A1 through the opened door. The transfer robot can load the substrate W onto the support plate 210 of the chuck 200. The introduction step S10 can be completed before t0.

[0085] In the temperature stabilization step S20 (t0 to t1), the substrate W can be heated (see...). Figure 4 In the temperature stabilization step S20, the temperature of the substrate W can be heated to a preset process temperature, and the temperature of the substrate W can be stabilized so that the temperature of the substrate W is kept constant at the process temperature. For example, in the temperature stabilization step S20, the temperature of the substrate W can also be changed from the initial temperature TE0 to the process temperature TE1. The process temperature TE1 can be higher than the initial temperature TE0. The process temperature TE1 can be 100°C or higher.

[0086] In the temperature stabilization step S20, the electrostatic electrode switch 224 is turned on, allowing the electrostatic electrode 220 to clamp the substrate W. Furthermore, the heater power switch 234 is turned on, causing the heater 230 to heat the support plate 210, and the heated support plate 210 to heat the substrate W. In this situation, the second gas supply unit 800 can supply inert gas IG to the plasma space A2. The inert gas IG supplied by the second gas supply unit 800 can be introduced into the processing space A1 through the plasma space A2 and the mixing space A3. Therefore, the pressure in the processing space A1 can increase from the initial pressure P0 to a first pressure P1 greater than the initial pressure P0. Furthermore, the controller 1000 can control the second gas supply unit 800 and the discharge unit 900 such that the pressure in the processing space A1 is maintained at the first pressure P1. For example, the controller 1000 can control the second gas supply unit 800 and the discharge unit 900 such that the supply flow rate of inert gas IG per unit time supplied by the second gas supply unit 800 is the same as the discharge flow rate of inert gas IG per unit time supplied by the discharge unit 900.

[0087] In the temperature stabilization step S20, the heater 230 heats the substrate W to stabilize its temperature to the process temperature, while the pressure in the processing space A1 is increased to a first pressure P1. This is because the pressure in the processing space A1 affects temperature changes and temperature stability. Therefore, in the temperature stabilization step S20 of the present invention, the second gas supply unit 800 and / or the exhaust unit 900 increase and maintain the pressure in the processing space A1 to the first pressure P1, which is the pressure used in processing step S50. Therefore, the temperature of the substrate W can be stabilized to the process temperature under the same or similar conditions as in processing step S50. In other words, although the etching rate relative to the film on the substrate W varies with the temperature of the substrate W, the present invention can improve the reliability of the etching rate in the temperature stabilization step S20 by increasing the pressure in the processing space A1 to the first pressure P1 (process pressure).

[0088] In the pressure stabilization step S30 (t1 to t2), the pressure in plasma space A2 and processing space A1 can be stabilized to the process pressure (see...). Figure 5 For example, the pressure in processing space A1 can be kept constant at a first pressure P1. Furthermore, the process pressures in plasma space A2 and processing space A1 can be the same. However, since plasma space A2 and processing space A1 are separated from each other by nozzle 300 and ion blocker 500, the process pressures in plasma space A2 and processing space A1 may differ slightly.

[0089] In the pressure stabilization step S30, the first gas supply unit 700 can supply the first process gas G1 to the mixing space A3. Furthermore, in the pressure stabilization step S30, the second gas supply unit 800 can supply the inert gas IG to the plasma space A2. Compared to the temperature stabilization step S20, a wider variety of gases can be supplied to the pressure stabilization step S30.

[0090] To maintain the pressure of the processing space A1 at a constant first pressure P1 during the pressure stabilization step S30, the supply flow rate of the inert gas IG continuously supplied from the pressure stabilization step S20 per unit time can be reduced, or the emission rate of the emission unit 900 per unit time can be further increased, thereby maintaining the pressure of the processing space A1 at the first pressure P1. During the pressure stabilization step S30, the pressures of the processing space A1, plasma space A2, and mixing space A3 can be equal to or similar to the pressures of the processing space A1, plasma space A2, and mixing space A3 during the processing step S50. In the pressure stabilization step S30, the pressures of the processing space A1, plasma space A2, and mixing space A3 are constantly maintained (i.e., stabilized) at the process pressure, thereby improving the reliability of the etching rate.

[0091] The ignition step S40 (t2 to t3) can be performed between the pressure stabilization step S30 and the processing step S50 (see [link]). Figure 6 In the ignition step S40, the first gas supply unit 700 can supply the first process gas G1 to the mixing space A3, while the second gas supply unit 800 can supply the inert gas IG to the plasma space A2. In the ignition step S40, the top electrode 601 can form an electric field in the plasma space A2 to excite a portion of the inert gas IG, thereby forming a plasma atmosphere in the plasma space A2. That is, in the ignition step S40 of this invention, a plasma atmosphere is formed in the plasma space A2 without supplying the second process gas G2. In the ignition step S40, the plasma atmosphere formed by the inert gas IG in the plasma space A2 can facilitate the excitation of the second process gas G2 in the subsequent processing step S50 to etch the substrate W.

[0092] In processing step S50 (t3~t4), etching may also be performed on the substrate W (see reference). Figure 7In processing step S50, the second gas supply unit 800 may supply a second process gas G2 to the plasma space A2. Optionally, depending on the type and amount of etchant to be generated, an inert gas IG may be further supplied to the plasma space A2. Furthermore, in processing step S50, the first gas supply unit 700 may supply a first process gas G1 to the mixing space A3. The first process gas G1 may be a hydrogen-containing gas, such as NH3. - The first process gas is a reactive gas. Furthermore, the inert gas IG can be selected from He, Ar, Xe, and N2. - The gas may be at least one of the following combinations: or a gas containing H2 capable of generating hydrogen groups H*, or a gas containing NF3 capable of generating fluorine groups F*. In the following description, the inert gas IG is assumed to be a gas containing He, the first process gas G1 is a gas containing NH3, and the second process gas G2 is a gas containing NF3. Furthermore, the explanation will take the removal of a SiO2-containing film formed on the substrate W as an example.

[0093] In the processing step S50 of this invention, the etching process mechanism is as follows.

[0094] F radical + NH3(g) + SiO2 → NH4F.HF → (NH4)2SiF6(s) → H2O

[0095] The solid byproduct (NH4)2SiF6 can be decomposed and evaporated at 100°C.

[0096] More specifically, the second process gas G2, including NF3, supplied to plasma space A2 can be excited into plasma P state. Ions of plasma P generated in plasma space A2 can be captured by an ion barrier 500 positioned between mixing space A3 and plasma space A2, if introduced into mixing space A3. Therefore, essentially only fluorine groups F* can be introduced into mixing space A3.

[0097] In this configuration, the fluorine group F* introduced into the mixing space A3 and the first process gas G1 can react with each other to generate etchant E, where NH4F.HF is the reactant, and the first process gas G1 contains NH3. -The gas. Furthermore, an etchant E can be applied to the substrate W. The etchant E can react with a film (e.g., a film including SiO2) formed on the substrate W, thereby generating (NH4)2SiF6 as a solid byproduct. In this case, since the temperature of the substrate W is heated to a temperature above 100°C, the solid byproduct (NH4)2SiF6 can be removed from the substrate W. The evaporated (NH4)2SiF6 can be discharged from the substrate processing apparatus 10 through the discharge unit 900.

[0098] In the first discharge step S60 (t4~t5), the process byproducts generated in the processed substrate W and the gas supplied to the processing space A1 can be discharged to the outside of the substrate processing apparatus 10 (see Figure 8 In the first discharge step S60, the supply of the first process gas G1, the second process gas G2, and the inert gas IG can be stopped, and the atmosphere maintained in the processing space A1 at the first pressure P1 can be discharged. In this case, the pressure of the processing space A1 can be controlled to 100 mTorr or lower.

[0099] In purging step S70 (t5 to t6), the pressure in processing space A1 can be increased. In purging step S70, purging gas can be supplied to processing space A1, mixing space A3, and plasma space A2 (see [link to purging step S70]). Figure 9 In the purging step S70, the pressure in the processing space A1 can be increased to a second pressure P2, which is higher than the first pressure P1. The purging gas may include, but is not limited to, a first process gas G1 supplied from the first gas supply unit 700, a second process gas G2 supplied from the second gas supply unit 800, and an inert gas IG. For example, the purging gas may consist only of an inert gas. Specifically, in the purging step S70, the first gas supply unit 700 may further include an inert gas supply unit (not shown) that supplies inert gas to the mixing space A3 via the main gas line 703, and the second gas supply unit 800 may also supply inert gas to the plasma space A2.

[0100] In the purging step S70, the pressure in the processing space A2 can be increased to a second pressure P2, which is a relatively high pressure. For example, in the purging step S70, the pressure in the processing space A1 can be greater than the pressure in the processing space A1 in the processing step S50. In the purging step S70, the processing space A1 can be pressurized to separate residual solid byproducts and process byproducts that may adhere to the inner wall of the housing 100 and the substrate W from the housing 100 and / or the substrate W.

[0101] In the second discharge step S80 (t6 to t7), the residual solid by-products and process by-products separated in the purging step S70 can be discharged to the outside of the substrate processing apparatus 10 (see [reference]). Figure 10 In the second discharge step S80, the supply of the first process gas G1, the second process gas G2, and the inert gas IG can be stopped, and the atmosphere maintained in the processing space A1 at the second pressure P2 can be discharged. In this case, the pressure of the processing space A1 can be controlled to 100 mTorr or lower.

[0102] The removal step S90 (t7 onwards) can be the step of removing the substrate W from the processing space A1. In the removal step S90, a door formed in the housing 100 and used as an inlet / outlet is opened, and a transfer robot (not shown) can remove the substrate W from the processing space A1 through the opened door. The transfer robot can unload the substrate W onto the support plate 210 of the chuck 200. The introduction step S10 can be performed after t7.

[0103] In the above embodiment, the top electrode 601 generates plasma P in plasma space A2, but the invention is not limited thereto. For example, a bottom electrode (not shown) can be disposed inside the chuck 200, and a bottom power supply for applying RF power can be connected to the bottom electrode. That is, plasma P can be generated in processing space A1, a first process gas G1 can be supplied to processing space A1, and the first process gas G1 reacts with plasma P including fluorine or hydrogen groups to generate etchant E.

[0104] In the above embodiment, the second process gas G2 is NF3, but the inventive concept is not limited thereto. For example, the second process gas G2 can be modified to include various gases including fluorine.

[0105] In the above embodiments, the second process gas G2 is a fluorine-containing gas, but the invention is not limited thereto. For example, the second process gas G2 can be a hydrogen-containing gas. For example, the second process gas G2 can be a gas containing H2. The second process gas G2 can be modified to be any gas capable of generating hydrogen groups H*.

[0106] The effects of this invention are not limited to those described above, and those skilled in the art will clearly understand any effects not mentioned from the specification and drawings.

[0107] Although preferred embodiments of the inventive concept have been illustrated and described to date, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing method, the substrate processing method comprising: A temperature stabilization step is used to stabilize the temperature of the substrate to the process temperature in a processing space for processing the substrate. The temperature stabilization step includes heating the substrate in the processing space by means of a chuck supporting the substrate, and increasing the pressure of the processing space to the process pressure by supplying gas to the processing space. A pressure stabilization step, wherein the pressure stabilization step is used to stabilize the pressure of the plasma space generating plasma and the pressure of the processing space to the process pressure by supplying the gas and a gas different from the aforementioned gas to the processing space, wherein the plasma space is in fluid communication with the processing space; as well as The processing step is used to generate plasma in the plasma space and to process the substrate using the plasma.

2. The substrate processing method according to claim 1, wherein, During the process of introducing plasma from the plasma space to the processing space, ions of the plasma generated in the plasma space are collected by an ion barrier positioned between the plasma space and the processing space.

3. The substrate processing method according to claim 2, wherein, The pressure stabilization step includes: Supplying inert gas to the plasma space; and A first gas, different from the inert gas, is supplied to a mixing space located between the plasma space and the processing space.

4. The substrate processing method according to claim 1, further comprising an ignition step performed between the pressure stabilization step and the processing step, the ignition step being used to form a plasma atmosphere in the plasma space.

5. The substrate processing method according to claim 4, wherein, The ignition step includes supplying an inert gas to the plasma space, and The processing steps include: Supplying a second gas, different from the inert gas, to the plasma space; and A first gas, different from the inert gas, is supplied to a mixing space located between the plasma space and the processing space.

6. The substrate processing method according to claim 5, wherein, The first gas is a hydrogen-containing gas, and the second gas is a fluorine-containing gas.

7. The substrate processing method according to any one of claims 1 to 6, the substrate processing method further comprising a first discharge step, the first discharge step being used to discharge the processing space after the processing step.

8. The substrate processing method according to claim 7, further comprising: A purging step, wherein the purging step is used to supply purging gas to the processing space after the first emission step; as well as A second discharge step is used to discharge the treatment space after the purging step.

9. The substrate processing method according to claim 8, wherein, The pressure in the processing space during the purging step is greater than the pressure in the processing space during the processing step.

10. A substrate processing method using plasma, the substrate processing method comprising: An introduction step is used to introduce a substrate into a processing space of a substrate processing apparatus, the substrate processing apparatus including a processing space and a plasma space for generating the plasma, the processing space and the plasma space being in fluid communication with each other; A temperature stabilization step is used to stabilize the temperature of the substrate introduced into the processing space to a preset process temperature. The temperature stabilization step includes heating the substrate in the processing space by a chuck supporting the substrate, and increasing the pressure of the processing space to the process pressure by supplying gas to the processing space. A pressure stabilization step, wherein the pressure stabilization step is used to stabilize the pressure of the plasma space and the pressure of the processing space to the process pressure by supplying the gas and a gas different from the aforementioned gas to the processing space; and A processing step, wherein the processing step is used to process the substrate using the plasma.

11. The substrate processing method according to claim 10, wherein, During the flow of ions from the plasma space to the mixing space, the ions generated in the plasma space are collected by an ion blocker positioned between the mixing space and the plasma space, which is located at the substrate processing apparatus and placed between the processing space and the plasma space.

12. The substrate processing method according to claim 11, further comprising an ignition step between the pressure stabilization step and the processing step, the ignition step being used to form a plasma atmosphere in the plasma space, and The pressure stabilization step and the ignition step include: A first gas is supplied to the mixing space; as well as Inert gas is supplied to the plasma space.

13. The substrate processing method according to claim 12, wherein, The processing steps include: Supplying a first gas to the mixing space; and A second gas, different from the first gas, is supplied to the plasma space.

14. The substrate processing method according to claim 13, wherein, The first gas is a gas containing NH3, and the second gas is a gas containing NH3.

15. The substrate processing method according to any one of claims 10 to 14, wherein the substrate processing method further comprises: A first discharge step, wherein the first discharge step is used to discharge the processing space after the processing step; A purging step, wherein the purging step is used to supply purging gas to the processing space after the first emission step; and A second discharge step, which is used to discharge the treatment space after the purging step. In the purging step, the pressure in the processing space is greater than the pressure in the processing space during the processing step.

16. A substrate processing apparatus, the substrate processing apparatus comprising: A housing that defines a processing space; A chuck that supports and heats a substrate in the processing space; Electrodes, the electrodes being configured to generate plasma in a plasma space in fluid communication with the processing space; A power module configured to apply power to the electrode; An ion blocker is positioned between the plasma space and the processing space and collects ions from the plasma generated from the plasma space. A nozzle is positioned between the ion blocker and the processing space, the nozzle and the ion blocker define a mixing space, the mixing space being disposed between the processing space and the plasma space; A gas supply unit configured to supply gas to the plasma space or the mixing space; An emission unit, configured to emit the atmosphere from the processing space, and Controller The controller controls the chuck to heat the substrate to the process temperature; controls the gas supply unit to supply gas to the processing space, and increases the pressure of the processing space to the process pressure when the temperature of the substrate stabilizes at the process temperature; controls the gas supply unit and the discharge unit to stabilize the pressure of the plasma space and the pressure of the processing space to a preset process pressure by supplying the gas and a gas different from the aforementioned gas to the processing space; and controls the power module to generate plasma in the plasma space after the pressure of the processing space stabilizes at the process pressure and after the temperature of the substrate placed on the chuck stabilizes at the process temperature.

17. The substrate processing apparatus according to claim 16, wherein the controller: (a) Controlling the power module and the gas supply unit, so that the gas supply unit supplies inert gas to the plasma space and, after the temperature of the substrate and the pressure of the processing space have stabilized, causes the electrodes to form an electric field in the plasma space; and (b) Control the power module and the gas supply unit so that, after the electric field is formed and a predetermined time has elapsed, the plasma is generated by supplying a gas including fluorine into the plasma space.

Images