An electromagnetic radiation resistant semiconductor device and an electromagnetic radiation resistant method

Abstract

The application provides a semiconductor device and a method for resisting electromagnetic radiation, the semiconductor device comprising a semiconductor substrate, a semiconductor layer, an insulating medium layer, a germanium-antimony-tellurium thin film layer, a first electrode and a second electrode. The method comprises: electromagnetic radiation waves reaching a super surface structure of the germanium-antimony-tellurium thin film layer; realizing reflection of the semiconductor device against electromagnetic radiation by the super surface structure of the germanium-antimony-tellurium thin film layer composed of grooves, cylinders and an electromagnetic radiation reflection matrix; the transverse holes and the longitudinal holes being filled with manganese-zinc ferrite material, when the first electromagnetic radiation waves reflected by the electromagnetic radiation reflection matrix reach the surface of the manganese-zinc ferrite material, second electromagnetic radiation waves are formed, the second electromagnetic radiation waves and the first electromagnetic radiation waves are opposite to each other, so as to offset the first electromagnetic radiation waves and the second electromagnetic radiation waves. The application improves the reflectivity of electromagnetic radiation, helps to reduce the energy of electromagnetic radiation, and reduces the influence of electromagnetic radiation on the performance of the Schottky diode.

Description

Technical Field

[0001] This invention relates to the field of electronic device technology, and in particular to a semiconductor device and method for resisting electromagnetic radiation. Background Technology

[0002] Semiconductor devices are electronic devices whose conductivity lies between that of good conductors and insulators. They utilize the unique electrical properties of semiconductor materials to perform specific functions, such as generating, controlling, receiving, converting, and amplifying signals, and performing energy conversion. The use of semiconductor devices generates electromagnetic radiation. Furthermore, electromagnetic radiation from the external environment can also affect the normal operation of semiconductor devices. Electromagnetic radiation not only affects the performance and lifespan of electronic devices but can also harm the human body. Therefore, it is necessary to incorporate electromagnetic radiation-resistant structures into semiconductor devices to mitigate the impact of electromagnetic radiation.

[0003] Prior art 1, CN202010920285.6, describes an array substrate and its fabrication method, and a display panel. The array substrate includes a substrate, a thin-film transistor array layer, and at least one radiation-resistant layer. The thin-film transistor array layer includes an oxide semiconductor layer. The radiation-resistant layer includes an incident light side and an emitted light side disposed opposite to each other. The emitted light side is disposed close to the oxide semiconductor layer. The incident light side is configured to allow high-energy light waves to enter the radiation-resistant layer via the incident light side. The radiation-resistant layer is configured to convert the high-energy light waves into visible light. The emitted light side is configured to allow visible light to enter the oxide semiconductor layer via the emitted light side. This results in the converted visible light not reaching the energy required to excite the oxide semiconductor layer to generate electron-hole pairs or oxygen holes. Although this achieves the effect of avoiding damage to the oxide semiconductor (e.g., IGZO) and improving the light stability of the oxide semiconductor layer, the radiation resistance effect is not ideal, affecting the performance of the oxide semiconductor.

[0004] Existing technology two, CN200510003247.X, describes a semiconductor electric detonator, comprising a wire, a plastic plug, a detonator shell, a detonator reinforcing cap, an initiating charge, a loose charge, and a bottom charge. A fiberglass cloth substrate is connected to the bottom end of the plastic plug. A semiconductor chip is fixed to the bottom surface of the fiberglass cloth substrate, and two metal electrodes on the semiconductor chip are connected to the wire via conductive metal wires. The distance between the end face of the semiconductor chip and the end face of the ignition hole on the detonator reinforcing cap is ≤5 mm, and the offset distance between the center position of the semiconductor chip and the central axis of the ignition hole is ≤±2 mm. This invention can significantly improve the safety performance of electric detonators. While achieving excellent anti-static, anti-stray current, and anti-electromagnetic radiation capabilities, as well as advantages such as ease of operation and safety, and high reliability, short action time, and good ignition consistency, the radiation resistance is not ideal, affecting the performance of the semiconductor electric detonator.

[0005] Existing technology three, CN201611218107.9, describes a capacitive touch electronic whiteboard with a built-in computer. It includes an electronic whiteboard body with a built-in computer (PC). A projector is positioned above the electronic whiteboard body and connected to the PC. An ITO semiconductor conductive film is adhered to the panel of the electronic whiteboard body. The capacitive touch electronic whiteboard with a built-in computer also includes a capacitive film control motherboard and an ITO circuit board module. The ITO semiconductor conductive film is connected to the capacitive film control motherboard via the ITO circuit board module, and the capacitive film control motherboard is connected to the PC via wiring. While this technology achieves the technical benefits of the computer motherboard being less susceptible to damage, having no blue light hazard, resisting electromagnetic radiation, requiring no flatness of the touch surface, resisting strong light interference, having no blind spots in touch, and being unaffected by interference, electromagnetic radiation still affects the ITO semiconductor conductive film.

[0006] Currently, existing technologies 1, 2, and 3 have poor electromagnetic radiation resistance, which affects the conductivity of related semiconductor devices (Schottky diodes) and indirectly affects the performance of semiconductor devices. Therefore, this invention uses electromagnetic radiation-resistant semiconductor devices and provides a method for electromagnetic radiation resistance to achieve electromagnetic radiation resistance of semiconductor devices and ensure the stability of semiconductor device performance. Summary of the Invention

[0007] To address the aforementioned technical problems, the present invention provides a semiconductor device resistant to electromagnetic radiation, comprising:

[0008] Insulating dielectric layer and germanium-antimony-tellurium thin film layer;

[0009] The upper end of the insulating dielectric layer is set as a germanium-antimony-tellurium thin film layer;

[0010] Electromagnetic radiation reflective substrates are provided on the upper and lower surfaces of the germanium-antimony-tellurium thin film. Several equally spaced, matrix-arranged grooves are formed on the basic reflective surface of the germanium-antimony-tellurium thin film, and cylinders are inserted into the grooves. The electromagnetic radiation reflective substrates are wavy.

[0011] Optionally, a first electrode of a Schottky diode and a second electrode of a Schottky diode are respectively disposed at both ends of the germanium-antimony-tellurium thin film layer; a Schottky barrier layer is disposed on the upper end of the germanium-antimony-tellurium thin film layer, and the Schottky barrier layer covers the germanium-antimony-tellurium thin film layer and a portion of the first electrode and the second electrode.

[0012] Optionally, a semiconductor layer consisting of multiple gates is disposed at the upper end of the bottom of the semiconductor substrate, and an insulating dielectric layer is disposed at the upper end of the semiconductor layer.

[0013] Optionally, the nitrogen unit doping content in the germanium-antimony-tellurium thin film layer is 12% to 15%.

[0014] Optional, the wavy shape includes crests and troughs, with the wave height being 2 / 3 of the cylinder height.

[0015] Optionally, the groove includes: a transverse hole and a longitudinal hole;

[0016] The transverse and longitudinal holes are set on the surface of the groove, and the transverse and longitudinal holes are filled with manganese-zinc ferrite material.

[0017] Optionally, the manganese-zinc ferrite material, based on the total mass of Fe2O3, MnO and ZnO as 100%, has the following composition: Fe2O3 content of 50% to 60%, ZnO content of 30% to 35%, and MnO content of 10% to 15%.

[0018] This invention provides a method for resisting electromagnetic radiation, comprising:

[0019] Electromagnetic radiation waves reach the metasurface structure of the germanium-antimony-tellurium thin film layer;

[0020] Schottky diodes achieve electromagnetic radiation reflection by using a germanium-antimony-tellurium thin film layer with a metasurface structure composed of grooves, cylinders, and an electromagnetic radiation reflecting substrate.

[0021] The transverse and longitudinal holes are filled with manganese-zinc ferrite material. When the first electromagnetic radiation wave, after being reflected by the electromagnetic radiation reflecting substrate, reaches the surface of the manganese-zinc ferrite material, it forms a second electromagnetic radiation wave. The second electromagnetic radiation wave is out of phase with the first electromagnetic radiation wave, thereby canceling out the first and second electromagnetic radiation waves.

[0022] Optional methods for measuring electromagnetic radiation include:

[0023] (1) Install several electromagnetic radiation sensors around the Schottky diode to collect the electromagnetic radiation around the Schottky diode;

[0024] (2) The collected electromagnetic radiation signal is preprocessed, including noise reduction, filtering and feature extraction, to obtain the preprocessed electromagnetic radiation signal.

[0025] (3) The controller receives the preprocessed electromagnetic radiation signal, calculates the electromagnetic radiation ratio between each electromagnetic radiation sensor based on the working time of each electromagnetic radiation sensor, and weights the electromagnetic radiation information obtained by each electromagnetic radiation sensor by the electromagnetic radiation ratio and obtains the average value as the electromagnetic radiation of the Schottky diode.

[0026] Optionally, the wave height of the electromagnetic radiation reflecting substrate is obtained by calculating the wavelength of the average electromagnetic radiation wave and the height by which the centerline of the electromagnetic radiation wave exceeds the calculated wave height.

[0027] This invention comprises a semiconductor layer consisting of multiple gates, a first electrode, and a second electrode. The first electrode utilizes the driving capability of an external circuit to reduce the internal driving or driving load that is higher than the chip power supply voltage. The second electrode enhances the current collection function. The germanium-antimony-tellurium thin film layer can reflect the electromagnetic radiation generated during the operation of the semiconductor device, gradually eliminating the energy of the electromagnetic radiation and preventing it from affecting other Schottky diodes (semiconductor devices). By forming a metasurface structure through the structural parameters of the germanium-antimony-tellurium thin film layer, the first-order anti-reflection mode of the germanium-antimony-tellurium thin film layer is coupled with the electromagnetic resonance in the structure, realizing a broadband absorption / radiation device with an effective emissivity greater than 0.82 in the 7-15µm range, and the device has a relatively low absorption / radiation rate of approximately 0.23 in the 4-9µm range.

[0028] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the written description, claims, and drawings.

[0029] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0030] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used in conjunction with embodiments of the invention to explain the invention and do not constitute a limitation thereof. In the drawings:

[0031] Figure 1 This is a block diagram of a semiconductor device resistant to electromagnetic radiation in an embodiment of the present invention;

[0032] Figure 2 This is a block diagram of the germanium-antimony-tellurium thin film layer in an embodiment of the present invention;

[0033] Figure 3 This is a block diagram of the groove in an embodiment of the present invention;

[0034] Figure 4 This is a flowchart of the method for resisting electromagnetic radiation in an embodiment of the present invention. Detailed Implementation

[0035] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0036] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to limit the embodiments of this application. The singular forms “a,” “the,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0037] In the following description, when referring to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims. In the description of this application, it should be understood that the terms "first," "second," "third," etc., are used only to distinguish similar objects and are not necessarily used to describe a specific order or sequence, nor should they be construed as indicating or implying relative importance. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0038] Example 1

[0039] like Figure 1 As shown, an embodiment of the present invention provides a semiconductor device resistant to electromagnetic radiation, comprising: a semiconductor substrate 1, a semiconductor layer 2, an insulating dielectric layer 3, a germanium-antimony-tellurium thin film layer 4, a first electrode 5, a second electrode 6, and a Schottky barrier layer 12.

[0040] A semiconductor layer 2 is disposed at the upper end of the bottom of the semiconductor substrate 1. An insulating dielectric layer 3 is disposed at the upper end of the semiconductor layer 2. A germanium-antimony-tellurium thin film layer 4 is disposed at the upper end of the insulating dielectric layer 3. A first electrode 5 and a second electrode 6 are disposed at the two ends of the germanium-antimony-tellurium thin film layer 4, respectively. A Schottky barrier layer 12 is disposed at the upper end of the germanium-antimony-tellurium thin film layer 4. The Schottky barrier layer 12 covers the germanium-antimony-tellurium thin film layer 4 and a portion of the first electrode 5 and the second electrode 6. The nitrogen unit doping content in the germanium-antimony-tellurium thin film layer 4 is 12% to 15%.

[0041] The working principle and beneficial effects of the above technical solution are as follows: The present invention is provided with a semiconductor layer, a first electrode, and a second electrode; the first electrode utilizes the driving capability of the external circuit to reduce the driving or driving load inside the first electrode that is higher than the chip power supply voltage; the second electrode enhances the current collection effect; the germanium-antimony-tellurium thin film layer can reflect the electromagnetic radiation generated when the semiconductor device (Schottky diode) is working, gradually eliminating the energy of the electromagnetic radiation and avoiding the electromagnetic radiation from affecting other semiconductor devices. By forming a metasurface structure through the structural parameters of the germanium-antimony-tellurium thin film layer, the first-order anti-reflection mode of the germanium-antimony-tellurium thin film layer is coupled with the electromagnetic resonance in the structure, realizing a broadband absorption / radiation device with an effective emissivity greater than 0.82 in 7-15um, and the device has a relatively low absorption / radiation rate of about 0.23 in 4-9um; the first impurity concentration of the semiconductor substrate is greater than the second impurity concentration of the semiconductor layer. The use of a higher first impurity concentration in the semiconductor substrate can reduce the series resistance of the Schottky diode, while the level of the second impurity concentration determines the characteristics of the diode. This concentration difference can maintain the high performance of the Schottky diode and effectively reduce the power consumption of the device due to the series resistance.

[0042] Example 2

[0043] like Figure 2 As shown, based on Example 1, the germanium-antimony-tellurium thin film layer 4 provided in this embodiment of the invention includes: a groove 7, a cylinder 8, and an electromagnetic radiation reflective substrate 9.

[0044] Electromagnetic radiation reflective substrates 9 are provided on the upper and lower surfaces of the germanium-antimony-tellurium thin film layer 4. Several equally spaced matrix-arranged grooves 7 are opened on the reflective surface of the germanium-antimony-tellurium thin film layer 9. A cylinder 8 is inserted into the groove 7. The electromagnetic radiation reflective substrate 9 is wavy, with wave crests and troughs, and the wave height is 2 / 3 of the height of the cylinder 8.

[0045] The working principle and beneficial effects of the above technical solution are as follows: The electromagnetic radiation reflecting substrate 9 of the present invention adopts a wave shape including crests and troughs, which increases the contact area of ​​electromagnetic radiation, improves the reflectivity of electromagnetic radiation, helps to reduce the energy of electromagnetic radiation, and mitigates the impact of electromagnetic radiation on the performance of semiconductor devices (Schottky diodes). Moreover, the wave-shaped structure is simple to manufacture and will not increase the manufacturing cost of semiconductor devices (Schottky diodes). The germanium-antimony-tellurium thin film layer, which is composed of grooves, cylinders and electromagnetic radiation reflecting substrate, enhances the anti-electromagnetic radiation capability of semiconductor devices (Schottky diodes). The wave height is 2 / 3 of the height of cylinder 8, which ensures that the reflection area can be maximized without affecting the setting of grooves and cylinders.

[0046] Example 3

[0047] Based on Example 2, the calculation process for the wave height h0 of the electromagnetic radiation reflecting substrate provided in this embodiment of the invention is as follows:

[0048] (1) Calculate the wavelength of the average electromagnetic radiation wave;

[0049] First, the wavelength λ1 of the average electromagnetic radiation wave is calculated based on the conventional electromagnetic radiation wavelength range of 300nm-1000nm. Then, based on the correspondence between the wavelength λ1 of the average electromagnetic radiation wave and the wavelength λ2 corresponding to the cumulative frequency p of the electromagnetic radiation wave, the wavelength λ2 is calculated using the difference method. The formula for calculating the wavelength λ1 of the average electromagnetic radiation wave is as follows:

[0050]

[0051] In the formula, v represents the magnetic wave radiation velocity, H represents the height of the groove, and λ represents the wavelength of the current electromagnetic radiation wave.

[0052] (2) Calculate the height by which the centerline of the electromagnetic radiation wave exceeds the calculated wave height.

[0053] First, using the wavelength λ1 of the average electromagnetic radiation wave that has been solved, the period T of the electromagnetic radiation wave is solved. Then, based on the electromagnetic radiation wave T, the average wavelength L is solved. Finally, the height h of the center line of the electromagnetic radiation wave exceeding the calculated wave height is solved.

[0054]

[0055]

[0056]

[0057] h0 = h + H

[0058] In the formula, h1 represents the preset wave height; h0 represents the final wave height.

[0059] The working principle and beneficial effects of the above technical solution are as follows: This invention calculates the wave height of the electromagnetic radiation reflecting substrate by calculating the wavelength of the electromagnetic radiation wave. The obtained wave height can achieve the best reflection effect of electromagnetic radiation, and thus minimize the energy loss of electromagnetic radiation. Due to the different semiconductor devices, the wavelength and frequency of the generated electromagnetic radiation wave are also different. By detecting the height of the center line of the electromagnetic radiation wave above the wave height, the wave height of the electromagnetic radiation reflecting substrate is finally calculated, thereby ensuring the reflection efficiency of the electromagnetic radiation reflecting substrate.

[0060] Example 4

[0061] like Figure 3 As shown, based on Embodiment 2, the groove 7 provided in this embodiment of the invention specifically includes: a transverse hole 10 and a longitudinal hole 11.

[0062] Transverse holes 10 and longitudinal holes 11 are provided on the surface of the groove 7, and the transverse holes 10 and longitudinal holes 11 are filled with manganese-zinc ferrite material. The manganese-zinc ferrite material is based on a total mass of Fe2O3, MnO and ZnO of 100%, with Fe2O3 content of 50% to 60%, ZnO content of 30% to 35%, and MnO content of 10% to 15%.

[0063] The working principle and beneficial effects of the above technical solution are as follows: The transverse and longitudinal holes of the present invention are filled with manganese-zinc ferrite material. When the first electromagnetic radiation wave, after being reflected by the electromagnetic radiation reflecting substrate, reaches the surface of the manganese-zinc ferrite material, a second electromagnetic radiation wave is formed. The second electromagnetic radiation wave is out of phase with the first electromagnetic radiation wave, thereby canceling out the first electromagnetic radiation wave and the second electromagnetic radiation wave.

[0064] Example 5

[0065] Based on Example 4, the method for calculating the amount of manganese-zinc ferrite material provided in this embodiment of the invention is as follows:

[0066]

[0067] V = V1 + V2

[0068] V1=C1*π

[0069] V2=C2*π

[0070] Where X represents the amount of manganese-zinc ferrite material used, in mg, and ρ represents the density of the manganese-zinc ferrite material, in mg / cm³. 2 Y represents the average power density of the manganese-zinc ferrite material, in mW / cm³. 2 V represents the internal surface area of ​​the transverse and longitudinal holes, in cm². 2 V1 represents the internal surface area of ​​the transverse hole, V2 represents the internal surface area of ​​the longitudinal hole, C1 represents the perimeter of the cross-section of the transverse hole, C2 represents the perimeter of the cross-section of the longitudinal hole, and A represents the total electromagnetic radiation in mW.

[0071] The working principle and beneficial effects of the above technical solution are as follows: This invention achieves the precise use of manganese-zinc ferrite material through calculation, and the total electromagnetic radiation can be measured by the equipment, which effectively improves the processing efficiency of electromagnetic radiation, while saving energy and reducing energy consumption.

[0072] Example 6

[0073] like Figure 4 As shown, an embodiment of the present invention provides a method for resisting electromagnetic radiation, comprising:

[0074] S100: Electromagnetic radiation waves reach the metasurface structure of the germanium-antimony-tellurium thin film layer;

[0075] S200: Electromagnetic radiation resistance of semiconductor devices is achieved through a germanium-antimony-tellurium thin film layer with a metasurface structure composed of grooves, cylinders and an electromagnetic radiation reflecting substrate.

[0076] S300: The transverse and longitudinal holes are filled with manganese-zinc ferrite material. When the first electromagnetic radiation wave, after being reflected by the electromagnetic radiation reflecting substrate, reaches the surface of the manganese-zinc ferrite material, it forms a second electromagnetic radiation wave. The second electromagnetic radiation wave is out of phase with the first electromagnetic radiation wave, thereby canceling out the first and second electromagnetic radiation waves.

[0077] The working principle and beneficial effects of the above technical solution are as follows: This invention gradually eliminates the energy of electromagnetic radiation, avoiding the impact of electromagnetic radiation on other semiconductor devices (Schottky diodes); the electromagnetic radiation reflective substrate increases the contact area of ​​electromagnetic radiation and improves the reflectivity of electromagnetic radiation, which helps to reduce the energy of electromagnetic radiation and mitigate the impact of electromagnetic radiation on the performance of semiconductor devices (Schottky diodes); the transverse and longitudinal holes are filled with manganese-zinc ferrite material. When the first electromagnetic radiation wave, after being reflected by the electromagnetic radiation reflective substrate, reaches the surface of the manganese-zinc ferrite material, a second electromagnetic radiation wave is formed. The second electromagnetic radiation wave is out of phase with the first electromagnetic radiation wave, thereby canceling out the first and second electromagnetic radiation waves.

[0078] Example 7

[0079] Based on Example 6, the electromagnetic radiation measurement method provided in this embodiment of the invention includes:

[0080] (1) Install several electromagnetic radiation sensors around the semiconductor device (Schottky diode) to collect the electromagnetic radiation around the semiconductor device (Schottky diode);

[0081] (2) The collected electromagnetic radiation signal is preprocessed, including noise reduction, filtering and feature extraction, to obtain the preprocessed electromagnetic radiation signal.

[0082] (3) The controller receives the preprocessed electromagnetic radiation signal, calculates the electromagnetic radiation ratio between each electromagnetic radiation sensor based on the working time of each electromagnetic radiation sensor, and weights the electromagnetic radiation information obtained by each electromagnetic radiation sensor by the electromagnetic radiation ratio and obtains the average value as the electromagnetic radiation of the semiconductor device (Schottky diode).

[0083] The working principle and beneficial effects of the above technical solution are as follows: This invention installs several electromagnetic radiation sensors around a semiconductor device (Schottky diode) to collect electromagnetic radiation around the semiconductor device; preprocesses the collected electromagnetic radiation signals; the controller receives the preprocessed electromagnetic radiation signals, calculates the electromagnetic radiation ratio between each electromagnetic radiation sensor based on the working time of each electromagnetic radiation sensor, and weights the electromagnetic radiation information obtained by each electromagnetic radiation sensor using the electromagnetic radiation ratio to obtain the average value as the electromagnetic radiation of the semiconductor device; it can obtain electromagnetic radiation information in a timely and accurate manner, which facilitates timely adjustment of the electromagnetic radiation resistance parameters of the semiconductor device, achieves timely damage prevention, and greatly helps to improve the performance of the semiconductor device.

[0084] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.

Claims

1. A semiconductor device resistant to electromagnetic radiation, characterized in that, include: Insulating dielectric layer and germanium-antimony-tellurium thin film layer; The upper end of the insulating dielectric layer is set as a germanium-antimony-tellurium thin film layer; Electromagnetic radiation reflective substrates are provided on the upper and lower surfaces of the germanium-antimony-tellurium thin film layer. Several equally spaced matrix grooves are opened on the reflective surface of the electromagnetic radiation reflective substrate, and cylinders are inserted into the grooves. The electromagnetic radiation reflective substrate is wavy. The first electrode and the second electrode of a Schottky diode are respectively disposed at both ends of the germanium-antimony-tellurium thin film layer; A Schottky barrier layer is disposed on the upper end of the germanium-antimony-tellurium thin film layer, and the Schottky barrier layer covers the germanium-antimony-tellurium thin film layer and a portion of the first electrode and the second electrode. A semiconductor layer is disposed at the upper end of the bottom of the semiconductor substrate, and an insulating dielectric layer is disposed at the upper end of the semiconductor layer; The groove includes: a transverse hole and a longitudinal hole; The transverse and longitudinal holes are set on the surface of the groove, and the transverse and longitudinal holes are filled with manganese-zinc ferrite material.

2. The electromagnetic radiation resistant semiconductor device as described in claim 1, characterized in that, The nitrogen unit doping content in the germanium-antimony-tellurium thin film is 12%~15%.

3. The electromagnetic radiation-resistant semiconductor device as described in claim 1, characterized in that, The wave shape includes crests and troughs, with the wave height being 2 / 3 of the cylinder's height.

4. The electromagnetic radiation resistant semiconductor device as described in claim 1, characterized in that, The manganese-zinc ferrite material, based on the total mass of Fe2O3, MnO and ZnO as 100%, has the following contents: Fe2O3 content is 50%~60%, ZnO content is 30%~35%, and MnO content is 10%~15%.

5. A method for resisting electromagnetic radiation, performing the operations implemented by the electromagnetic radiation-resistant semiconductor device as described in any one of claims 1-4, characterized in that, include: Electromagnetic radiation waves reach the metasurface structure of the germanium-antimony-tellurium thin film layer; Electromagnetic radiation resistance and reflection in semiconductor devices are achieved through a germanium-antimony-tellurium thin film layer with a metasurface structure composed of grooves, cylinders, and an electromagnetic radiation reflective substrate. The transverse and longitudinal holes are filled with manganese-zinc ferrite material. When the first electromagnetic radiation wave, after being reflected by the electromagnetic radiation reflecting substrate, reaches the surface of the manganese-zinc ferrite material, it forms a second electromagnetic radiation wave. The second electromagnetic radiation wave is out of phase with the first electromagnetic radiation wave, thereby canceling out the first and second electromagnetic radiation waves.

6. The method for resisting electromagnetic radiation as described in claim 5, characterized in that, The wave height of the electromagnetic radiation reflecting substrate is obtained by calculating the wavelength of the average electromagnetic radiation wave and the height of the center line of the electromagnetic radiation wave above the calculated wave height. The reflective surface of the electromagnetic radiation reflecting substrate has several equally spaced matrix-arranged grooves, and cylinders are inserted into the grooves. The electromagnetic radiation reflecting substrate is wavy, with wave crests and troughs, and the wave height is 2 / 3 of the height of the cylinder. Wave height of electromagnetic radiation reflecting substrate The calculation process is as follows: (1) Calculate the wavelength of the average electromagnetic radiation wave; First, the wavelength of the average electromagnetic radiation wave is calculated based on the conventional electromagnetic radiation wavelength range of 300nm-1000nm. Then, based on the wavelength of the average electromagnetic radiation wave and the corresponding cumulative frequency of electromagnetic radiation waves wavelength The correspondence was determined, and the wavelength was calculated using the difference method. The wavelength of average electromagnetic radiation waves The calculation formula is as follows: ； In the formula, Indicates the velocity of magnetic wave radiation. Indicates the height of the groove. Indicates the wavelength of the current electromagnetic radiation wave; (2) Calculate the height by which the centerline of the electromagnetic radiation wave exceeds the calculated wave height. First, using the wavelength of the already solved average electromagnetic radiation wave Solve for the period of electromagnetic radiation waves Then, based on electromagnetic radiation waves Solving for the average wavelength Finally, the height by which the centerline of the electromagnetic radiation wave exceeds the calculated wave height is determined. ; ； ； ； ； In the formula, Indicates the preset wave height; This indicates the final wave height.

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