A broad spectrum light source and method of making the same

Abstract

This application belongs to the field of LED semiconductor lighting technology, and relates to a broadband light source and its fabrication method. The method includes an alloy base, an LED chip, and phosphor adhesive. The alloy base is used to fix the LED chip, which includes violet, blue, infrared, and near-infrared chips. The phosphor adhesive is coated on the LED chip. The technical solution provided by this application offers a wide spectral range, ensuring a complete light source spectrum and improving user comfort. Simultaneously, it meets the requirements for broadband light sources, has a simple and practical process structure, reduces costs, and allows for mass production.

Description

Technical Field

[0001] This application relates to the field of LED semiconductor lighting technology, and more specifically, to a broadband light source and its preparation method. Background Technology

[0002] LED (Light-Emitting Diode) light sources are a relatively new technology and lighting source, offering significant advantages over traditional lighting sources. LED light sources are environmentally friendly, containing no heavy metals such as mercury or lead, and are energy-efficient. Lamps made with LED light sources are also characterized by their small size, strong shock resistance, durability, and ease of transport.

[0003] Current LED light sources suffer from spectral imbalances within the visible light band, resulting in incomplete emission spectra, causing visual impairment and eye discomfort. Furthermore, their narrow spectral range fails to meet the broad-spectrum requirements of industrial production, communications, and medical fields, such as spectral testing of fiber optic components and spectral analysis of chemical and biological samples. Therefore, a broad-spectrum light source is urgently needed to overcome the spectral imbalances within the visible light band and to expand the spectral range to meet broad-spectrum demands. Summary of the Invention

[0004] The technical problem to be solved by the embodiments of this application is that the spectral ratio in the visible light band is unbalanced in the related technology, resulting in an incomplete emission spectrum and a narrow emission spectrum range, which cannot meet the wide spectrum requirements.

[0005] To address the aforementioned technical problems, this application provides a broadband light source, employing the technical solution described below:

[0006] Alloy base, LED chip and phosphor adhesive;

[0007] The alloy base is used to fix the LED chip;

[0008] The LED chip includes violet light chip, blue light chip, infrared chip and near-infrared chip;

[0009] The phosphor paste is coated onto the LED chip.

[0010] Furthermore, the wavelength range of the violet light chip is 400-455 nm; the wavelength range of the blue light chip is 470-472.5 nm; the wavelength range of the infrared chip is 780-1100 nm; and the wavelength range of the near-infrared chip is 1100-2526 nm.

[0011] Furthermore, the phosphor adhesive is composed of silicone and phosphor, and the excitation wavelength of the phosphor is adapted to the emission wavelength of the LED chip.

[0012] Furthermore, the phosphor includes yellow phosphor, red phosphor, 730nm band phosphor, 800nm ​​band phosphor, 840nm band phosphor, and 900nm band phosphor. The mass ratio of the silica gel to the yellow phosphor, red phosphor, 730nm band phosphor, 800nm ​​band phosphor, 840nm band phosphor, and 900nm band phosphor is (95-105):(1.9-2.1):(1.9-2.1):(0.95-1.05):(0.95-1.05):(0.95-1.05).

[0013] Furthermore, the alloy base comprises aluminum, copper, silicon and carbon in a mass ratio of (80±5%):(10±5%):(5±5%):(5±5%).

[0014] Furthermore, the alloy base is an LED bracket with circuitry, and the LED chip is connected to the circuitry via die bonding or eutectic bonding.

[0015] To address the aforementioned technical problems, this application provides a method for preparing a broadband light source, employing the following technical solution:

[0016] Step S10: The aluminum component, copper component, silicon component and carbon component are mixed and proportioned according to a preset mass ratio, and then put into a high-temperature furnace to process the alloy seat.

[0017] Step S20: Turn on the automatic die bonder, and after preheating, use the automatic die bonder to place the violet chip, blue chip, infrared chip and near-infrared chip on the alloy base, and send them into the oven to bake until they are completely cured, to obtain a chip curing semi-finished product.

[0018] Step S30: The silica gel and phosphor are mixed evenly in an automatic mixer according to the formula mass ratio, and vacuum is applied to obtain the phosphor adhesive. The formula mass ratio is: silica gel: yellow phosphor: red phosphor: 730nm band phosphor: 800nm ​​band phosphor: 840nm band phosphor: 900nm band phosphor = (95-105): (1.9-2.1): (1.9-2.1): (0.95-1.05): (0.95-1.05): (0.95-1.05): (0.95-1.05);

[0019] Step S40: Turn on the automatic dispensing machine to preheat, feed the chip curing semi-finished product into the automatic dispensing machine, and uniformly coat the phosphor adhesive onto the violet chip, the blue chip, the infrared chip and the near-infrared chip.

[0020] In step S50, the sample processed in step S40 is placed in an oven for curing and baking to obtain a broadband light source.

[0021] Furthermore, the baking temperature is 140–160°C.

[0022] Furthermore, the curing temperature for the curing and baking process is 115–125°C, and the curing time is 2–3 hours.

[0023] Furthermore, after the step of obtaining the broadband light source, the method further includes:

[0024] The broadband light source is placed in a broadband tester or a spectrum analyzer for performance testing.

[0025] Compared with the prior art, the embodiments of this application have the following main advantages:

[0026] The broadband light source provided in this application includes an alloy base, LED chips, and phosphor adhesive. The alloy base is used to fix the LED chips, which include violet chips, blue chips, infrared chips, and near-infrared chips. The phosphor adhesive is coated on the LED chips. The broadband light source of this application has a wide spectral range, making the light source spectrum complete and improving the user comfort of the light source. At the same time, it can meet the needs of broadband light sources. The process structure is simple and practical, reducing costs and enabling mass production. Attached Figure Description

[0027] To more clearly illustrate the solutions in this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of a broadband light source in an embodiment of this application;

[0029] Figure 2 This is a spectral distribution diagram of the broadband light source in the embodiments of this application. Detailed Implementation

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0031] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0032] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0033] This application provides a broadband light source, see [link to relevant documentation]. Figure 1 As shown, the broadband light source includes an alloy base 10, an LED chip 20, and phosphor adhesive (not shown in the figure). The alloy base 10 is used to fix the LED chip 20. The LED chip 20 includes a violet chip 21, a blue chip 22, an infrared chip 23, and a near-infrared chip 24. The phosphor adhesive is coated on the LED chip 20.

[0034] When the LED chip 20 emits light, it generates a lot of heat. The phosphor also generates heat when emitting light. Under high temperature, the phosphor's luminous efficiency and stability will drop sharply, resulting in poor overall luminous effect of the LED light source. Using an alloy base 10 can better dissipate heat, thereby ensuring the luminous efficiency and stability of the phosphor.

[0035] In this embodiment, the violet chip 21, blue chip 22, infrared chip 23 and near-infrared chip 24 are fixed on the alloy base 10 in an array arrangement and connected in series by gold wire 30.

[0036] In this embodiment, the wavelength range of the violet light chip is low-wave blue light, specifically 400-455nm; the wavelength range of the blue light chip is 470-472.5nm; the wavelength range of the infrared chip is near-infrared short wave, specifically 780-1100nm; and the wavelength range of the near-infrared chip is near-infrared long wave, specifically 1100-2526nm.

[0037] In a specific example, the wavelength range of the infrared chip can be selected from 1000-1050nm, and the wavelength range of the near-infrared chip can be selected from 1300-1350nm.

[0038] Phosphor adhesive is made by mixing silica gel and phosphor according to a formula. The function of phosphor is to excite light and form white LED light for lighting. Specifically, the phosphor can be excited to emit light by the light emitted by the LED chip.

[0039] Different phosphors have different optimal excitation wavelengths. In order to meet the requirements of a wide spectrum, the excitation wavelength of the selected phosphor is adapted to the emission wavelength of the LED chip 20. That is, the corresponding phosphor is excited by the LED chip of different wavelengths, which can improve the luminous efficiency of the phosphor.

[0040] In this embodiment, the phosphor includes yellow phosphor, red phosphor, 730nm phosphor, 800nm ​​phosphor, 840nm phosphor and 900nm phosphor.

[0041] The aforementioned phosphor can be excited by a purple chip 21 with a light emission wavelength of 450-455nm to emit light of the corresponding wavelength. In this embodiment, by combining LED chips and phosphors of different wavelengths, the emission spectrum range of the broadband light source is broadened, and the defect of spectral imbalance in the visible light band can be repaired.

[0042] It should be understood that there are no restrictions on the types of phosphors. Multiple types of phosphors in different wavelengths can be mixed with silica gel as needed to prepare phosphor adhesive.

[0043] In this embodiment, a phosphor adhesive is prepared by mixing silica gel with yellow phosphor, red phosphor, 730nm phosphor, 800nm ​​phosphor, 840nm phosphor, and 900nm phosphor in a mass ratio of (95-105):(1.9-2.1):(1.9-2.1):(0.95-1.05):(0.95-1.05):(0.95-1.05):(0.95-1.05) to obtain a uniform phosphor adhesive. The phosphor adhesive is then coated onto the violet chip 21, blue chip 22, infrared chip 23, and near-infrared chip 24. The light emitted by the violet chip 21, blue chip 22, infrared chip 23, and near-infrared chip 24 at corresponding wavelengths combines with the light emitted by the phosphors excited by the chips to form a broadband white light with a complete spectrum.

[0044] Preferably, the mass ratio of silica gel to yellow phosphor, red phosphor, 730nm phosphor, 800nm ​​phosphor, 840nm phosphor and 900nm phosphor is 100:2:2:1:1:1:1.

[0045] In this embodiment, the alloy base 10 is composed of aluminum, copper, silicon and carbon, with a corresponding mass ratio of (80±5%):(10±5%):(5±5%):(5±5%). Aluminum, copper, silicon and carbon are placed in a high-temperature furnace according to the mass ratio to process the alloy base 10.

[0046] The optimal mass ratio is 80:10:5:5.

[0047] The silicon and carbon components react in a high-temperature electric furnace to form silicon carbide, which has good thermal conductivity. The hardness of copper meets the requirements of the bracket, and aluminum has good thermal conductivity. The alloy base is made by combining aluminum, copper, silicon and carbon, which can meet the requirements of high hardness and good thermal conductivity of the alloy base 10.

[0048] In some alternative implementations, the alloy base 10 is an LED support with circuitry, and the LED chip 20 is connected to the circuitry via die bonding or eutectic bonding, such as... Figure 1 As shown, the LED chip 20 is connected to the circuit of the LED bracket by die bonding using gold wire 30. Specifically, the violet chip 21, blue chip 22, infrared chip 23 and near-infrared chip 24 are connected to the circuit of the LED bracket by gold wire 30, and thus the violet chip 21, blue chip 22, infrared chip 23 and near-infrared chip 24 are electrically connected to each other through the circuit.

[0049] The broadband light source of this application embodiment uses multiple LED chips of different wavelengths combined together to excite phosphors of various wavelengths. This allows the broadband light source to simulate the spectrum of a standard light source (incandescent lamp or sunlight) uniformly and continuously, achieving better color rendering and reducing the proportion of harmful blue light. The spectral distribution diagram of the broadband light source is shown below. Figure 2 As shown, the spectral range is broadened, which corrects the defect of spectral imbalance in the visible light band, thereby protecting human visual health.

[0050] Based on the above-mentioned broadband light source, this application also provides a method for preparing a broadband light source, comprising the following steps:

[0051] Step S10, design and process alloy base 10: mix aluminum, copper, silicon and carbon components according to a preset mass ratio, and process the alloy base 10 in a high-temperature furnace.

[0052] The preset mass ratio is aluminum component: copper component: silicon component: carbon component = (80±5%): (10±5%): (5±5%): (5±5%), preferably aluminum component: copper component: silicon component: carbon component = 80:10:5:5.

[0053] The carbon component can be sourced from petroleum coke, which is a hydrocarbon compound containing 90-97% carbon and 1.5-8% hydrogen, as well as nitrogen, chlorine, sulfur, and heavy metal compounds. The silicon component can be sourced from quartz sand, and the specific processing steps are as follows:

[0054] 1) Raw material crushing

[0055] A hammer crusher is used to crush petroleum coke to the required particle size. Then, aluminum and copper are crushed separately to the required aluminum powder and copper powder.

[0056] 2) Ingredients and Mixing

[0057] Ingredient preparation and mixing are processes of weighing and mixing according to the prescribed formula.

[0058] In this embodiment, a platform is used for batching and a concrete mixer is used for mixing. Petroleum coke and quartz sand are batched according to process requirements, and then aluminum powder and copper powder are added for mixing.

[0059] 3) Preparation of high-temperature electric furnace

[0060] Furnace preparation involves refurbishing and repairing a previously used furnace for reuse. The work includes cleaning the furnace bottom material, repairing the electrodes, cleaning and repairing the furnace walls, removing the load, setting the furnace to level 1, and checking for and eliminating other defects in the furnace.

[0061] Then, the ingredients and mixed materials are put into a high-temperature electric furnace to process the alloy base 10.

[0062] Step S20, fixing LED chips: turn on the automatic die bonder, and after preheating, use the automatic die bonder to place the violet chip 21, blue chip 22, infrared chip 23 and near-infrared chip 24 on the alloy base 10, and send them into the oven to bake until they are completely cured, thus obtaining a chip-cured semi-finished product.

[0063] In this embodiment, the automatic die bonder preheats for 30-40 minutes, after which the LED chips—violet chip 21, blue chip 22, infrared chip 23, and near-infrared chip 24—are fixed on the alloy base 10. The baking temperature is 140-160°C, preferably 150°C, and the baking time is 60 minutes.

[0064] Step S30, preparing phosphor adhesive: Mix silica gel and phosphor in an automatic mixer according to the formula mass ratio, stir evenly, and vacuum to obtain phosphor adhesive. The formula mass ratio is silica gel: yellow phosphor: red phosphor: 730nm band phosphor: 800nm ​​band phosphor: 840nm band phosphor: 900nm band phosphor = (95-105): (1.9-2.1): (1.9-2.1): (0.95-1.05): (0.95-1.05): (0.95-1.05): (0.95-1.05).

[0065] The silica gel and phosphor are added together in an automatic mixer according to the formula mass ratio and stirred. The preferred formula mass ratio is silica gel: yellow phosphor: red phosphor: 730nm band phosphor: 800nm ​​band phosphor: 840nm band phosphor: 900nm band phosphor = 100: 2: 2: 1: 1: 1: 1.

[0066] Step S40: Turn on the automatic dispensing machine and preheat for a certain period of time, such as 15 min to 30 min. Then, send the chip curing semi-finished product obtained in step S20 into the automatic dispensing machine and uniformly coat the phosphor adhesive onto the violet chip 21, blue chip 22, infrared chip 23 and near-infrared chip 24.

[0067] Step S50, curing and baking: The sample processed in step S40 is placed in an oven for curing and baking to obtain a broadband light source.

[0068] After curing and baking, the phosphor adhesive forms a coating that is fixed onto the LED chip, solidifying it into a single unit.

[0069] The curing and baking conditions are as follows: curing temperature is 115-125℃, curing time is 2-3 hours, preferably 120℃ for 2 hours.

[0070] In this embodiment, the prepared broadband light source is subjected to appearance inspection. After passing the inspection, it is placed in a broadband tester or a spectrum analyzer for performance testing. After passing the test, it is packaged and stored.

[0071] In this embodiment, the standard for passing the test is that under a broadband light source, the light is soft and comfortable for the human eye when viewing objects.

[0072] The broadband light source prepared in this application has a wide spectral range, making the light source spectrum complete and improving the user comfort of the light source. At the same time, it can meet the needs of broadband light sources. The process structure is simple and practical, reducing costs and enabling mass production.

[0073] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. A broadband light source, characterized in that, include: Alloy base, LED chip and phosphor adhesive; The alloy base is used to fix the LED chip; The LED chip includes violet light chip, blue light chip, infrared chip and near-infrared chip; The phosphor paste is coated onto the LED chip; The phosphor adhesive is composed of silicone and phosphor, and the excitation wavelength of the phosphor is adapted to the emission wavelength of the LED chip; The phosphors include yellow phosphors, red phosphors, 730nm phosphors, 800nm ​​phosphors, 840nm phosphors, and 900nm phosphors. The mass ratio of the silica gel to the yellow phosphor, red phosphor, 730nm phosphor, 800nm ​​phosphor, 840nm phosphor, and 900nm phosphor is (95-105):(1.9-2.1):(1.9-2.1):(0.95-1.05):(0.95-1.05):(0.95-1.05):(0.95-1.05). The wavelength range of the violet light chip is 400-455nm; the wavelength range of the blue light chip is 470-472.5nm; the wavelength range of the infrared light chip is 780-1100nm; and the wavelength range of the near-infrared light chip is 1100-2526nm.

2. The broadband light source according to claim 1, characterized in that, The alloy base is composed of aluminum, copper, silicon and carbon, with a corresponding mass ratio of (80±5%):(10±5%):(5±5%):(5±5%).

3. The broadband light source according to claim 1, characterized in that, The alloy base is an LED bracket with circuitry, and the LED chip is connected to the circuitry via die bonding or eutectic bonding.

4. A method for preparing a broadband light source, characterized in that, Includes the following steps: Step S10: The aluminum component, copper component, silicon component and carbon component are mixed and proportioned according to a preset mass ratio, and then put into a high-temperature furnace to process the alloy seat. Step S20: Turn on the automatic die bonder. After preheating, use the automatic die bonder to place the violet chip, blue chip, infrared chip, and near-infrared chip on the alloy base, and then bake them in an oven until they are completely cured to obtain a chip-cured semi-finished product. The wavelength range of the violet chip is 400-455nm; the wavelength range of the blue chip is 470-472.5nm; the wavelength range of the infrared chip is 780-1100nm; and the wavelength range of the near-infrared chip is 1100-2526nm. Step S30: Silica gel and phosphor are mixed evenly in an automatic mixer according to the formula mass ratio, and then vacuumed to obtain phosphor adhesive. The formula mass ratio is: silica gel: yellow phosphor: red phosphor: 730nm band phosphor: 800nm ​​band phosphor: 840nm band phosphor: 900nm band phosphor = (95-105): (1.9-2.1): (1.9-2.1): (0.95-1.05): (0.95-1.05): (0.95-1.05): (0.95-1.05). Step S40: Turn on the automatic dispensing machine to preheat, feed the chip curing semi-finished product into the automatic dispensing machine, and uniformly coat the phosphor adhesive onto the violet chip, the blue chip, the infrared chip and the near-infrared chip. In step S50, the sample processed in step S40 is placed in an oven for curing and baking to obtain a broadband light source.

5. The preparation method according to claim 4, characterized in that, The baking temperature is 140~160℃.

6. The preparation method according to claim 4, characterized in that, The curing temperature for the curing and baking process is 115~125℃, and the curing time is 2-3 hours.

7. The preparation method according to claim 4, characterized in that, Following the step of obtaining a broadband light source, the method further includes: The broadband light source is placed in a broadband tester or a spectrum analyzer for performance testing.

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