A thermal processing apparatus for semiconductor and method of using the same

Abstract

The application discloses a kind of semiconductor heat treatment equipment, including outer tube body, the top of the outer tube body is equipped with two groups of staggered arrangement round bar, the bottom wall of the outer tube body is equipped with annular inner tube, the outer wall of the outer tube body is equipped with support ring, the outer surface of two groups of the round bar is sleeved with hollow bottom plate, the top of the hollow bottom plate is equipped with adjusting plate, the top of the adjusting plate is provided with embedded groove, the inner wall of the embedded groove is equipped with two groups of side-by-side arrangement clamping block, the top of two groups of the clamping block is equipped with vertical rod, the outer surface of the vertical rod is provided with multiple groups of up and down arrangement annular groove, the outer surface of two groups of the vertical rod is sleeved with sleeve.The content of hot gas entering the annular inner tube can be controlled in the application, and it can be suitable for a variety of different sizes of semiconductor wafer, and the wafer is reduced by adopting clamping wafer circumferential surface to reduce the area of being shielded, so as to maximize contact with hot gas.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, specifically to a semiconductor heat treatment apparatus and its method of use. Background Technology

[0002] In the semiconductor manufacturing fields such as integrated circuits and photovoltaics, vertical or horizontal furnace tube equipment for heat treatment of wafers has been widely used. During semiconductor processing, a thin film needs to be deposited on the surface of the wafer to improve its performance. In the heat treatment process, the wafer is usually placed in the chamber of the heat treatment equipment, and the chamber is controlled to reach the temperature required by the process, so that the wafer undergoes the expected changes.

[0003] The shortcomings of existing semiconductor heat treatment equipment are:

[0004] 1. In the heat treatment of semiconductors, the wafers formed by semiconductors come in various sizes. Most existing semiconductor heat treatment equipment places a support platform under the wafer. When the wafer size is too small, the support platform and the wafer are prone to mismatch. Conversely, when the wafer is too large, its bottom surface is in too much contact with the support platform, making it difficult for this part to come into contact with the heat treatment gas, thereby reducing the heat treatment effect of the wafer.

[0005] 2. In the heat treatment of semiconductors, semiconductor wafers are usually placed on top of a support platform. In this placement method, the bottom of the wafer has more contact with the top of the support platform. When hot gas is introduced into the equipment, the contact area between the wafer and the support platform is less likely to be affected by the hot gas, resulting in lower coating properties at this point, which affects actual use.

[0006] 3. In semiconductor heat treatment equipment, after hot gas enters the equipment, the wafer is in a static state and only relies on the flow of hot gas itself to contact the wafer. The efficiency of heat treatment of the wafer is relatively slow, which affects the final efficiency.

[0007] 4. In semiconductor heat treatment equipment, after hot gas enters the equipment, the wafer is in a static state and only relies on the flow of hot gas itself to contact the wafer. The efficiency of heat treatment of the wafer is relatively slow, which affects the final efficiency. Summary of the Invention

[0008] The purpose of this invention is to provide a semiconductor heat treatment apparatus and its method of use, so as to solve the problems mentioned in the background art.

[0009] To achieve the above objectives, the present invention provides the following technical solution: a semiconductor heat treatment device, comprising an outer tube body, two sets of staggered circular rods mounted on the top of the outer tube body, an annular inner tube mounted on the bottom wall of the outer tube body, and a support ring mounted on the outer wall of the outer tube body;

[0010] Two sets of circular rods are fitted with perforated base plates on their outer surfaces. An adjustment plate is installed on the top of the perforated base plate. The top of the adjustment plate is provided with a fitting groove. Two sets of locking blocks arranged side by side are installed on the inner wall of the fitting groove. An upright rod is installed on the top of each set of locking blocks. Multiple sets of vertically arranged annular grooves are provided on the outer surface of each upright rod. A sleeve is fitted onto the outer surface of each set of upright rods. A connecting plate is installed on the outer wall of each sleeve on opposite sides. Electric push rods are installed through the outer walls of both sides of the annular inner tube. One end of each set of electric push rods is respectively attached to the outer surface of the two sets of connecting plates.

[0011] Preferably, a connecting collar is installed on the inner wall of the annular groove, and two sets of vertically arranged connecting plates are installed on one outer wall of the connecting collar. A combined rod is installed on the top of one set of connecting plates, and the bottom of the combined rod penetrates the interior of the other set of connecting plates. Two sets of vertically arranged movable plates are installed on the outer surface of the combined rod, and a spring is installed around the outer surface of the combined rod. Arc-shaped plates are installed on the outer surfaces of both sets of connecting plates and both sets of movable plates, and arc-shaped clamping plates are installed at one end of both sets of arc-shaped plates.

[0012] Preferably, both sets of arc-shaped clamps have through grooves on their front sides, and fastening blocks are installed on the inner walls of both sets of through grooves. Rubber plates are installed on the front of one set of fastening blocks and the back of the other set of fastening blocks. Fastening nails are installed on the top of both sets of arc-shaped clamps, and the bottom of the fastening nails penetrates the interior of the fastening blocks. A wafer is held between the two sets of rubber plates.

[0013] Preferably, a heater is fitted into the bottom wall of the outer tube, an air inlet pipe is installed on the front of the heater, a control valve is installed on the top of the air inlet pipe, a delivery pipe is installed at the output end of the heater, and the tail end of the delivery pipe passes through the interior of the support ring. A conduit is installed at the tail end of the delivery pipe, and the tail end of the conduit extends into the interior of the outer tube. A composite pipe is installed at the tail end of the conduit. Two sets of side-by-side fixing members are sleeved on the outer surface of the composite pipe, and the top of the fixing members is in contact with the top wall of the outer tube. Multiple sets of evenly arranged air outlet pipes are installed at the bottom of the composite pipe.

[0014] Preferably, a top plate is installed on the top of the annular inner tube, and a movable circular plate is placed on the top of the top plate. Both the top plate and the movable circular plate are provided with multiple sets of evenly arranged slots. A hanging rod is installed on the top of the movable circular plate, and the top of the hanging rod extends out of the interior of the outer tube. The top of the outer tube is provided with scale markings, and a temperature sensor is installed on one side of the inner wall of the annular inner tube.

[0015] Preferably, a disc is mounted on the top of the boom, a turntable is mounted on the top of the disc, and an indicator arrow is mounted on the outer surface of the disc.

[0016] Preferably, a protective cylinder is fitted into the bottom wall of the outer tube, a servo motor is installed on the bottom wall of the protective cylinder, a reciprocating screw is installed on the output end of the servo motor via a shaft, and the top of the reciprocating screw penetrates the interior of the hollow bottom plate. A bearing seat is sleeved on the top of the reciprocating screw, and the top of the bearing seat is in contact with the top wall of the outer tube.

[0017] Preferably, an air outlet pipe is installed on the outer surface of the outer tube, and one end of the air outlet pipe passes through the interior of the support ring. An arc-shaped door is installed on the front of the outer tube via a hinge. An observation window is provided on the front of the arc-shaped door, and a handle is installed on the front of the arc-shaped door.

[0018] As a preferred embodiment, the steps for using this heat treatment equipment are as follows:

[0019] S1. The staff adjusts the spacing between the two sets of upright rods according to the specific size of the semiconductor wafer to be processed. The two sets of electric push rods are operated synchronously to cause them to extend outward or retract inward. Then, a pushing or pulling force is applied to the connecting plate in one direction. This pushing and pulling force is then transmitted to the upright rod through the sleeve, causing it to move the locking block along the inner wall of the fitting groove until the spacing between the two sets of upright rods is adjusted to the appropriate value.

[0020] S2. The staff opens the curved door and then applies pressure to the two curved plates arranged at the bottom, causing the two sets of curved clamps to gradually open. Then the wafer is placed in it, and then the pressure applied to the curved plates is released. At this time, the distance between the ends of the two sets of curved clamps gradually decreases until both sets of rubber plates are in contact with the outer surface of the wafer. Then, multiple sets of wafers are placed in this way.

[0021] S3. The gas is supplied through an external gas supply device via an intake pipe. The gas is then heated by a heater and then transmitted to the interior of the integrated tube via a delivery pipe and a conduit. It then flows downward through multiple sets of outlet pipes at the bottom of the integrated tube and then enters the space inside the annular inner tube through multiple sets of slots to act on multiple sets of wafers.

[0022] S4. The temperature sensor monitors the temperature inside the space of this equipment in real time and feeds it back to the control terminal wirelessly connected to this equipment. When the temperature deviates from the set value, the operator rotates the turntable to make the disc drive the hanging rod to rotate in the set direction, which in turn causes the movable disc to follow the upper surface of the top plate to rotate, so that the slots set on the surfaces of the two are misaligned, thereby changing the rate at which hot air enters the annular inner tube space.

[0023] S5. The servo motor runs at the set speed, causing its output shaft to drive the reciprocating screw to rotate in the set direction, which in turn causes the hollow base plate connected to it by thread to move up and down accordingly in the direction of rotation.

[0024] Compared with the prior art, the beneficial effects of the present invention are:

[0025] 1. In this invention, when the size of a batch of wafers to be processed changes, the electric push rod can be operated to cause it to extend outward or retract inward accordingly. Then, a pushing or pulling force is applied to one side to the connecting plate, sleeve and upright rod, causing the upright rod to drive the locking block to move along the inner wall of the fitting groove until the distance between the two sets of upright rods is adjusted to a suitable state, thereby making the equipment suitable for wafers of different sizes.

[0026] 2. In this invention, two sets of arc-shaped plates, two sets of connecting plates, two sets of movable plates, a combined rod, a spring, and two sets of arc-shaped clamping plates are combined to form a spring clamping structure. By applying a squeezing force to the two sets of arc-shaped plates in the spring clamping structure, the two sets of arc-shaped clamping plates are gradually opened. Then, the wafer is placed in it, and then the force applied to the arc-shaped plates is released. At this time, the distance between the tail ends of the two sets of arc-shaped clamping plates gradually decreases until both the front and rear sets of rubber plates are in contact with the outer surface of the wafer. At this time, only part of the circumferential surface of the wafer is in contact with the rubber plate, and its bottom and top are unobstructed. Therefore, it is promoted to interact with the hot gas to the maximum extent, thereby improving the process performance of the semiconductor wafer.

[0027] 3. In this invention, the operator rotates the turntable, causing the disc to drive the boom to rotate in a set direction, which in turn causes the movable disc to rotate along with the upper surface of the top plate, so that the slots set on the surfaces of the two are misaligned, thereby changing the rate at which hot air enters the annular inner tube space. The slots set on the upper surfaces of the movable disc and the top plate change from an overlapping shape to a misaligned shape, which can reduce the amount of hot air entering the annular inner tube, thereby controlling the oxide layer thickness of the wafer.

[0028] 4. In this invention, the output shaft of the servo motor drives the reciprocating lead screw to rotate in a set direction, which in turn drives the hollow base plate and top components connected to it by thread to move up and down accordingly in the direction of rotation. When the wafer moves upward synchronously, it can push some of the hot gas upward. Conversely, when the wafer moves downward, it can accelerate the downward flow rate of the hot gas, so as to disrupt the flow direction of the hot gas inside the annular inner tube, thereby increasing the uniformity of contact between the wafer surface and the hot gas. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0030] Figure 2 This is a schematic cross-sectional view of the outer tube of the present invention;

[0031] Figure 3 This is a schematic diagram of the installation structure of the hollow base plate, adjustment plate and locking block of the present invention;

[0032] Figure 4 This is a schematic diagram of the installation structure of the connecting plate and the electric push rod of the present invention;

[0033] Figure 5 This is a schematic diagram of the installation structure of the arc-shaped clamping plate, rubber plate, and wafer of the present invention;

[0034] Figure 6 This is a schematic diagram of the installation structure of the arc-shaped clamping plate and fastening block of the present invention;

[0035] Figure 7 This is a schematic diagram of the installation structure of the top plate, movable circular plate and hanging rod of the present invention;

[0036] Figure 8 This is a schematic diagram of the installation structure of the servo motor and reciprocating lead screw of the present invention.

[0037] In the diagram: 1. Outer tube; 2. Round rod; 3. Annular inner tube; 4. Support ring; 5. Hollowed-out base plate; 6. Adjusting plate; 7. Fitting groove; 8. Locking block; 9. Upright rod; 10. Annular groove; 11. Sleeve; 12. Connecting plate; 13. Electric push rod; 14. Connecting collar; 15. Connecting plate; 16. Movable plate; 17. Spring; 18. Arc plate; 19. Arc clamping plate; 20. Through groove; 21. Fastening block; 22. Rubber plate; 23. Fastening nail; 24. Wafer; 25. Heater; 26. Delivery pipe; 27. Integrated pipe; 28. Fixture; 29. ​​Vent pipe; 30. Top plate; 31. Movable circular plate; 32. Slot; 33. Hanging rod; 34. Scale mark; 35. Disc; 36. Turntable; 37. Indicating arrow; 38. Protective cylinder; 39. Servo motor; 40. Reciprocating lead screw; 41. Temperature sensor; 42. Vent pipe; 43. Curved door; 44. Observation window; 45. Handle. Detailed Implementation

[0038] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] In the description of this invention, it should be noted that the terms "upper," "lower," "inner," "outer," "front end," "rear end," "both ends," "one end," and "the other end," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0040] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installed," "equipped with," "connected," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0041] One embodiment provided by the present invention:

[0042] A semiconductor heat treatment device includes an outer tube 1, with two sets of staggered round rods 2 mounted on the top of the outer tube 1, an annular inner tube 3 mounted on the bottom wall of the outer tube 1, and a support ring 4 mounted on the outer wall of the outer tube 1. A perforated base plate 5 is fitted onto the outer surface of the two sets of round rods 2, and an adjusting plate 6 is mounted on the top of the perforated base plate 5. A fitting groove 7 is provided on the top of the adjusting plate 6, and two sets of parallel locking blocks 8 are mounted on the inner wall of the fitting groove 7. An upright rod 9 is mounted on the top of each of the two sets of locking blocks 8. Multiple sets of vertically arranged annular grooves 10 are provided on the outer surface of the upright rods 9. A sleeve 11 is fitted onto the outer surface of each of the two sets of upright rods 9, and a connecting plate 12 is mounted on the opposite outer wall of each of the two sets of sleeves 11. Electric push rods 13 are installed through the outer walls of both sides of the annular inner tube 3, and one end of each set of electric push rods 13 is respectively attached to the outer surface of the two sets of connecting plates 12.

[0043] In semiconductor heat treatment, semiconductor wafers come in various sizes. Most existing semiconductor heat treatment equipment places a support platform beneath the wafer. When the wafer is too small, a mismatch between the support platform and the wafer can occur. Conversely, when the wafer is too large, its bottom surface has excessive contact with the support platform, making it difficult for this part to come into contact with the heat treatment gases, thus reducing the effectiveness of the wafer heat treatment. To solve this problem, such as... Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, in this invention, an electric push rod 13 is also designed, in which the two sets of locking blocks 8 are in a non-fixed fit with the fitting groove 7. When the locking block 8 is subjected to external force, it can move along the inner wall of the fitting groove 7. At the same time, the combination of the locking block 8 and the adjusting plate 6 can increase the stability of the upright rod 9 and effectively prevent it from tilting forward or backward. In practical applications, when the size of a batch of wafers 24 to be processed changes, the electric push rod 13 can be used to make them extend outward or retract inward accordingly. Then, a pushing or pulling force is applied to one side to the connecting plate 12, sleeve 11 and upright rod 9, causing the upright rod 9 to drive the locking block 8 to move along the inner wall of the fitting groove 7 until the distance between the two sets of upright rods 9 is adjusted to a suitable state. The sleeve 11 and the upright rod 9 are in a non-fixed fit, so when the servo motor 39 is running, it does not hinder the up and down movement of the upright rod 9, but limits the distance of its up and down movement.

[0044] The inner wall of the annular groove 10 is fitted with a connecting collar 14. Two sets of vertically arranged connecting plates 15 are fitted on one side of the outer wall of the connecting collar 14. A combined rod is fitted on the top of one set of connecting plates 15, and the bottom of the combined rod penetrates the interior of the other set of connecting plates 15. Two sets of vertically arranged movable plates 16 are fitted on the outer surface of the combined rod. A spring 17 is fitted around the outer surface of the combined rod. Arc-shaped plates 18 are fitted on the outer surfaces of both sets of connecting plates 15 and both sets of movable plates 16. Arc-shaped clamping plates 19 are fitted at one end of each set of arc-shaped plates 18.

[0045] In semiconductor heat treatment processes, semiconductor wafers are typically placed on top of a support stage. In this placement method, the bottom of the wafer has significant contact with the top of the support stage. When hot gas is subsequently introduced into the equipment, the contact area between the wafer and the support stage is less effectively exposed to the hot gas, resulting in lower coating adhesion at this point and affecting practical use. To address this issue, in this invention, as... Figure 2 , Figure 5 and Figure 6As shown, an arc-shaped plate 18 and an arc-shaped clamping plate 19 are also designed. The two sets of arc-shaped plates 18, two sets of connecting plates 15, two sets of movable plates 16, a combination rod, a spring 17, and two sets of arc-shaped clamping plates 19 are combined to form a spring clamping structure. By applying a squeezing force to the two sets of arc-shaped plates 18 in the spring clamping structure, the two sets of arc-shaped clamping plates 19 are gradually opened. Then, the wafer 24 is placed in it, and then the force applied to the arc-shaped plates 18 is released. At this time, the distance between the tail ends of the two sets of arc-shaped clamping plates 19 gradually decreases until both the front and rear sets of rubber plates 22 are in contact with the outer surface of the wafer 24. At this time, only part of the circumferential surface of the wafer 24 is in contact with the rubber plate 22, and its bottom and top are unobstructed, thus maximizing its interaction with the hot gas.

[0046] Both sets of arc-shaped clamping plates 19 have through grooves 20 on their front sides, and fastening blocks 21 are installed on the inner walls of both sets of through grooves 20. Rubber plates 22 are installed on the front of one set of fastening blocks 21 and the back of the other set of fastening blocks 21. Fastening nails 23 are installed on the top of both sets of arc-shaped clamping plates 19, and the bottom of the fastening nails 23 penetrates the interior of the fastening blocks 21. A wafer 24 is clamped between the two sets of rubber plates 22.

[0047] like Figure 6 As shown, when the size of the wafer 24 is small, the gap between the two sets of rubber plates 22 can be reduced by replacing the rubber plate 22 with a thicker one. The fastening block 21 and the through groove 20 are in a non-fixed fit. The rubber plate 22 can be disassembled by removing the fastening nail 23 that passes through the fastening block 21 and then applying a pulling force away from the location of the arc-shaped clamp 19 to the fastening block 21.

[0048] A heater 25 is fitted into the bottom wall of the outer tube 1. An air inlet pipe is installed on the front of the heater 25. A control valve is installed on the top of the air inlet pipe. A delivery pipe 26 is installed at the output end of the heater 25. The tail end of the delivery pipe 26 passes through the interior of the support ring 4. A conduit is installed at the tail end of the delivery pipe 26. The tail end of the conduit extends into the interior of the outer tube 1. A comprehensive pipe 27 is installed at the tail end of the conduit. Two sets of side-by-side fasteners 28 are sleeved on the outer surface of the comprehensive pipe 27. The top of the fasteners 28 is in contact with the top wall of the outer tube 1. Multiple sets of evenly arranged air outlet pipes 29 are installed at the bottom of the comprehensive pipe 27.

[0049] like Figure 1 and Figure 2As shown, after the heater 25 is running, it can heat the gas entering its inner cavity, and then flow into the space of the delivery pipe 26. After that, it enters the space of the integrated pipe 27 through the conduit, and then flows downward through the multiple sets of gas outlet pipes 29 at the bottom of the integrated pipe 27. After that, it enters the space of the annular inner pipe 3 through the multiple sets of slots 32 to act on the multiple sets of wafers 24. The setting of the multiple sets of gas outlet pipes 29 can be used to initially disperse the hot gas.

[0050] A top plate 30 is installed on the top of the annular inner tube 3. A movable circular plate 31 is placed on the top of the top plate 30. Both the top plate 30 and the movable circular plate 31 are provided with multiple sets of evenly arranged slots 32. A hanger 33 is installed on the top of the movable circular plate 31, and the top of the hanger 33 extends out of the interior of the outer tube 1. A scale mark 34 is provided on the top of the outer tube 1. A temperature sensor 41 is installed on one side of the inner wall of the annular inner tube 3.

[0051] In semiconductor heat treatment equipment, during the later stages of heat treatment, the content of hot gases in contact with the wafer cannot be reduced, easily leading to an excessively thick oxide layer on the wafer surface. To solve this problem, in this invention, as... Figure 1 , Figure 2 and Figure 7 As shown, a movable circular plate 31 is also designed. The temperature sensor 41 monitors the temperature inside the space of this device in real time and feeds it back to the control terminal wirelessly connected to this device. When the temperature deviates from the set value, the operator rotates the turntable 36, causing the disc 35 to drive the hanging rod 33 to rotate in the set direction. This causes the movable circular plate 31 to rotate along with the upper surface of the top plate 30, so that the slots 32 set on the surfaces of the two are misaligned. This changes the rate at which hot air enters the space of the annular inner tube 3. The slots 32 set on the upper surfaces of the movable circular plate 31 and the top plate 30 change from an overlapping shape to a misaligned shape, which can reduce the amount of hot air entering the annular inner tube 3, thereby controlling the oxide layer thickness of the wafer 24.

[0052] A disc 35 is mounted on the top of the boom 33, a turntable 36 is mounted on the top of the disc 35, and an indicator arrow 37 is mounted on the outer surface of the disc 35.

[0053] A protective cylinder 38 is fitted into the bottom wall of the outer tube 1. A servo motor 39 is installed on the bottom wall of the protective cylinder 38. A reciprocating screw 40 is installed at the output end of the servo motor 39 via a shaft. The top of the reciprocating screw 40 penetrates the interior of the hollow base plate 5. A bearing seat is sleeved on the top of the reciprocating screw 40, and the top of the bearing seat is in contact with the top wall of the outer tube 1.

[0054] In semiconductor heat treatment equipment, after hot gas enters the equipment, the wafer 24 is in a static state, and contact with the wafer 24 relies solely on the flow of the hot gas itself. This results in a relatively slow heat treatment efficiency for the wafer 24, affecting the final efficiency. To increase the heat treatment efficiency of the wafer 24, in this invention, as follows... Figure 2 and Figure 8 As shown, a servo motor 39 and a reciprocating lead screw 40 are also designed. By running the servo motor 39, its output shaft drives the reciprocating lead screw 40 to rotate in a set direction, which in turn drives the hollow base plate 5, which is connected to it by a thread, to move up and down accordingly in the direction of rotation. At this time, the components on the top of the hollow base plate 5 move up and down accordingly. When the wafer 24 moves upward synchronously, it can push some of the hot gas upward. Conversely, when the wafer 24 moves downward, it can accelerate the downward flow rate of the hot gas, so as to disrupt the flow direction of the hot gas inside the annular inner tube 3, thereby increasing the uniformity of the contact between the surface of the wafer 24 and the hot gas.

[0055] An air outlet pipe 42 is installed on the outer surface of the outer tube body 1, and one end of the air outlet pipe 42 passes through the interior of the support ring 4. An arc-shaped door 43 is installed on the front of the outer tube body 1 via a hinge. An observation window 44 is provided on the front of the arc-shaped door 43, and a handle 45 is installed on the front of the arc-shaped door 43.

[0056] like Figure 1 and Figure 2 As shown, the vent pipe 42 provides an exhaust channel for the gas inside the space of the outer tube 1. When the arc-shaped door 43 is opened, it is convenient for staff to inspect the various structural components inside the space of the outer tube 1, and it is also convenient to pick up and put in the wafer 24. The setting of the observation window 44 makes it convenient to observe the specific condition inside the space of the outer tube 1 at any time. The handle 45 provides convenience for staff to open and close the arc-shaped door 43.

[0057] The operating steps for this heat treatment equipment are as follows:

[0058] S1. The staff adjusts the distance between the two sets of upright rods 9 according to the specific size of the semiconductor wafer 24 to be processed. The two sets of electric push rods 13 are operated synchronously to cause them to extend outward or retract inward. Then, a pushing or pulling force is applied to the connecting plate 12 in one direction. This pushing and pulling force is then transmitted to the upright rod 9 through the sleeve 11, causing it to drive the locking block 8 to move along the inner wall of the fitting groove 7 until the distance between the two sets of upright rods 9 is adjusted to a suitable value.

[0059] S2. The staff opens the arc-shaped door 43 and then applies pressure to the two arc-shaped plates 18 arranged at the bottom, causing the two sets of arc-shaped clamping plates 19 to gradually open. Then the wafer 24 is placed in it, and then the pressure applied to the arc-shaped plates 18 is released. At this time, the distance between the ends of the two sets of arc-shaped clamping plates 19 gradually decreases until both the front and rear sets of rubber plates 22 are in contact with the outer surface of the wafer 24. Then, multiple sets of wafers 24 are placed in this manner.

[0060] S3. The gas is supplied through an external gas supply device via an air inlet pipe, and then heated by a heater 25. After that, it is delivered to the interior of the integrated pipe 27 via a delivery pipe 26 and a conduit. Then, it flows downward through multiple sets of air outlet pipes 29 at the bottom of the integrated pipe 27, and then enters the space inside the annular inner pipe 3 through multiple sets of slots 32 to act on multiple sets of wafers 24.

[0061] S4. The temperature sensor 41 monitors the temperature inside the space of this equipment in real time and feeds it back to the control terminal wirelessly connected to this equipment in real time. When the temperature deviates from the set value, the operator rotates the turntable 36 to make the disc 35 drive the hanging rod 33 to rotate in the set direction, thereby causing the movable disc 31 to follow the rotation of the upper surface of the top plate 30, so that the slots 32 set on the surfaces of the two are misaligned, thereby changing the rate at which hot air enters the space of the annular inner tube 3.

[0062] S5. The servo motor 39 is operated at the set speed, causing its output shaft to drive the reciprocating screw 40 to rotate in the set direction, thereby causing the hollow base plate 5, which is connected to it by a threaded engagement, to move up and down accordingly in the direction of rotation.

[0063] Working principle: By operating the electric push rod 13, it is caused to extend outward or retract inward accordingly, and then a pushing or pulling force is applied to one side to the connecting plate 12, sleeve 11, and upright rod 9. This causes the upright rod 9 to move the locking block 8 along the inner wall of the fitting groove 7, thereby adjusting the two sets of upright rods 9 to match the wafer 24 of the set size. By applying a squeezing force to the two sets of arc plates 18, the two sets of arc clamping plates 19 are gradually opened, and then the wafer 24 is placed in them. Then the force applied to the arc plates 18 is released, causing the rubber... The rubber plate 22 is attached to the outer surface of the wafer 24. At this time, only part of the circumferential surface of the wafer 24 is in contact with the rubber plate 22, and its bottom and top are unobstructed. Therefore, it is encouraged to interact with the hot gas to the maximum extent. By rotating the turntable 36, the disc 35 drives the hanging rod 33 to rotate in the set direction, which in turn causes the movable disc 31 to follow the rotation of the upper surface of the top plate 30, so that the slots 32 set on the surfaces of the two are misaligned. This changes the rate and content of hot gas entering the space of the annular inner tube 3, thereby controlling the thickness of the oxide layer on the surface of the wafer 24.

[0064] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. A heat treatment apparatus for semiconductors comprising an outer tube (1), characterized in that: The top of the outer pipe body (1) is provided with two groups of circular rods (2) arranged in staggered manner, the bottom wall of the outer pipe body (1) is provided with an annular inner pipe (3), and the outer wall of the outer pipe body (1) is provided with a support ring (4); The outer surfaces of the two groups of circular rods (2) are sleeved with hollow bottom plates (5), the top of the hollow bottom plate (5) is provided with an adjusting plate (6), the top of the adjusting plate (6) is provided with an embedded groove (7), the inner wall of the embedded groove (7) is provided with two groups of clamping blocks (8) arranged side by side, the top of each group of clamping blocks (8) is provided with a vertical rod (9), the outer surface of the vertical rod (9) is provided with a plurality of annular grooves (10) arranged in up-down direction, the outer surfaces of the two groups of vertical rods (9) are sleeved with sleeves (11), the outer walls of the opposite sides of the two groups of sleeves (11) are provided with connecting plates (12), the outer walls of the two sides of the annular inner pipe (3) are provided with electric push rods (13) penetratingly arranged, and one end of each of the two groups of electric push rods (13) is attached to the outer surface of the connecting plate (12). The inner wall of the annular groove (10) is provided with a connecting sleeve ring (14), one side of the connecting sleeve ring (14) is provided with two groups of connecting plates (15) arranged in up-down direction, one group of the connecting plates (15) is provided with a combined rod at the top, and the bottom of the combined rod penetrates the inner part of the other group of connecting plates (15), the outer surface of the combined rod is provided with two groups of movable plates (16) arranged in up-down direction, the outer surface of the combined rod is surrounded by a spring (17), the outer surfaces of the two groups of connecting plates (15) and the two groups of movable plates (16) are provided with arc-shaped plates (18), and one end of each of the two groups of arc-shaped plates (18) is provided with an arc-shaped clamping plate (19).

2. The apparatus for heat treatment of a semiconductor according to claim 1, wherein: The front surfaces of the two groups of arc-shaped clamping plates (19) are provided with through grooves (20), the inner walls of the two groups of through grooves (20) are provided with fastening blocks (21), the front surfaces of one group of the fastening blocks (21) and the back surfaces of the other group of fastening blocks (21) are provided with rubber plates (22), the top of each of the two groups of arc-shaped clamping plates (19) is provided with a fastening nail (23), the bottom of the fastening nail (23) penetrates the inner part of the fastening block (21), and the two groups of rubber plates (22) clamp a wafer (24) therebetween.

3. The apparatus for heat treatment of a semiconductor according to claim 2, wherein: The bottom wall of the outer pipe body (1) is embedded with a heater (25), the front surface of the heater (25) is provided with an air inlet pipe, the top of the air inlet pipe is provided with a control valve, the output end of the heater (25) is provided with a conveying pipe (26), the tail end of the conveying pipe (26) penetrates the inner part of the support ring (4), the tail end of the conveying pipe (26) is provided with a guide pipe, the tail end of the guide pipe extends into the inner part of the outer pipe body (1), the tail end of the guide pipe is provided with a comprehensive pipe (27), the outer surface of the comprehensive pipe (27) is sleeved with two groups of fixing members (28) arranged side by side, the top of the fixing member (28) is attached to the top wall of the outer pipe body (1), and the bottom of the comprehensive pipe (27) is provided with a plurality of gas outlet pipes (29) arranged uniformly.

4. The apparatus for heat treatment of a semiconductor according to claim 3, wherein: The top of the annular inner tube (3) is provided with a top plate (30), the top of the top plate (30) is provided with a movable circular plate (31), the top of the top plate (30) and the movable circular plate (31) are provided with a plurality of groups of uniformly arranged notches (32), the top of the movable circular plate (31) is provided with a boom (33), the top of the boom (33) extends into the inner tube (1), the top of the outer tube (1) is provided with a scale mark (34), and the inner wall of one side of the annular inner tube (3) is provided with a temperature sensor (41).

5. The apparatus for heat treatment of a semiconductor according to claim 4, wherein: The top of the boom (33) is provided with a disc (35), the top of the disc (35) is provided with a rotating disc (36), and the outer surface of the disc (35) is provided with an indicating arrow (37).

6. The apparatus for heat treatment of a semiconductor according to claim 5, wherein: The bottom wall of the outer tube (1) is embeddedly provided with a protective cylinder (38), the bottom wall of the protective cylinder (38) is provided with a servo motor (39), the output end of the servo motor (39) is provided with a reciprocating screw rod (40) through a shaft, the top of the reciprocating screw rod (40) penetrates into the inner tube (5), the top of the reciprocating screw rod (40) is provided with a bearing seat, and the top of the bearing seat is attached to the top wall of the outer tube (1).

7. The apparatus for heat treatment of a semiconductor according to claim 6, wherein: The outer surface of the outer tube (1) is provided with an air outlet pipe (42), one end of the air outlet pipe (42) penetrates into the support ring (4), the front of the outer tube (1) is provided with an arc-shaped door (43) through a hinge, the front of the arc-shaped door (43) is provided with an observation window (44), and the front of the arc-shaped door (43) is provided with a handle (45).

8. The apparatus for heat treatment of a semiconductor according to claim 7, wherein The use method of the heat treatment equipment is as follows: S1, the staff adjusts the distance between the two groups of vertical rods (9) according to the specific size of the semiconductor wafer (24) to be processed, wherein the two groups of electric push rods (13) are synchronously operated to extend outward or shrink inward, and then a pushing force or a pulling force is applied to the connecting plate (12) on one side, and then the pushing force and the pulling force are transmitted to the vertical rod (9) through the sleeve (11), so that the vertical rod (9) drives the clamping block (8) to move along the inner wall of the embedded groove (7), until the distance between the two groups of vertical rods (9) is adjusted to the appropriate value; S2, the staff opens the arc-shaped door (43), and then applies a pressing force to the two arc-shaped plates (18) arranged at the bottom, so that the two arc-shaped clamping plates (19) are gradually opened, and then the wafer (24) is placed in them, then the force applied to the arc-shaped plate (18) is released, at this time the distance between the tail ends of the two arc-shaped clamping plates (19) gradually decreases, until the front and rear rubber plates (22) are attached to the outer surface of the wafer (24), and then the other groups of wafers (24) are placed in the same way; S3, through the gas pipe outside the supply of gas equipment, and then the gas through the heater (25) heating treatment, after along the delivery pipe (26) and the catheter to the comprehensive pipe (27) inside, and then through the comprehensive pipe (27) bottom of a plurality of gas outlet pipe (29) downward flow, after a plurality of slot (32) into the annular inner tube (3) space inside, to act on a plurality of wafer (24); S4, through the temperature sensor (41) real-time monitoring of the device space inside the temperature state, and real-time feedback to the device with wireless connection control terminal, when its temperature and set value has certain deviation, the staff through the rotation of the turntable (36), make disc (35) drive the boom (33) to the set direction rotation, and then make the activity round plate (31) follow the top plate (30) on the surface rotation, to make the two surface set the slot (32) is dislocation, in this way to change the hot gas into the annular inner tube (3) space rate; S5, according to the set rate operation servo motor (39), make its output shaft drive reciprocating screw rod (40) to the set direction rotation, and then drive the hollow bottom plate (5) with its threaded embedded connection corresponding up and down movement along the rotation direction.

Images