Evaporation mask and method for manufacturing the same

Abstract

The evaporation mask includes: a metal plate including a first surface and a second surface on the opposite side of the first surface; a through hole penetrating from the first surface side of the metal plate to the second surface side; and a flat area located between two adjacent through holes when the evaporation mask is viewed from the second surface side. The through holes are staggered in a first direction and a second direction in a plan view. The flat area includes a first flat area on one side of a first center line and a second flat area on the other side of the first center line. The first center line passes through the center points of two adjacent through holes in the first direction. The first flat area includes a portion where the size of the first flat area in the first direction increases as it moves away from the first center line. The second flat area includes a portion where the size of the second flat area in the first direction increases as it moves away from the first center line.

Description

Technical Field

[0001] Embodiments of the present invention relate to an evaporation mask and a method for manufacturing the evaporation mask. Background Art

[0002] In display devices used in portable devices such as smartphones and tablet computers, high definition is preferred. For example, the pixel density is preferably 400 ppi or more. In portable devices, the demand for ultra-high definition (UHD) is also increasing. In this case, the pixel density of the display device is preferably 800 ppi or more, for example.

[0003] In display devices, organic EL display devices have attracted attention due to their good responsiveness, low power consumption, and high contrast. As a method for forming pixels of an organic EL display device, a method of forming pixels or electrodes in a desired pattern using an evaporation mask having through holes arranged in a desired pattern is known. Specifically, first, an evaporation mask is combined on a substrate for an organic EL display device. Then, an evaporation material containing an organic material is attached to the substrate through the through holes of the evaporation mask. By performing such an evaporation process, pixels having an evaporation layer containing the evaporation material can be formed on the substrate in a pattern corresponding to the pattern of the through holes of the evaporation mask.

[0004] As a method for manufacturing a mask, a method of forming through holes in a metal plate by etching using a lithography technique is known. For example, first, a first surface resist layer is formed on the first surface of the metal plate, and a second surface resist layer is formed on the second surface of the metal plate. Then, the region of the first surface of the metal plate that is not covered by the first surface resist layer is etched to form a first recess on the first surface of the metal plate. Next, the region of the second surface of the metal plate that is not covered by the second surface resist layer is etched to form a second recess on the second surface of the metal plate. At this time, by etching in such a way that the first recess and the second recess communicate with each other, through holes penetrating the metal plate can be formed.

[0005] Prior Art Documents

[0006] Patent Documents

[0007] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2014-148745 Summary of the Invention

[0008] In the vapor deposition process, a part of the vapor deposition material moving from the vapor deposition source toward the vapor deposition mask moves in a direction inclined with respect to the normal direction of the metal plate constituting the vapor deposition mask. The vapor deposition material moving in a direction inclined with respect to the normal direction of the metal plate is likely to adhere to the wall surface of the through hole without passing through the through hole of the vapor deposition mask. Therefore, the thickness of the vapor deposition layer formed of the vapor deposition material attached to the substrate becomes thinner more easily as it approaches the wall surface of the through hole. The phenomenon in which the attachment of such a vapor deposition material to the substrate is hindered by the wall surface of the through hole is also called shadow.

[0009] In one embodiment of the present invention, a vapor deposition mask including two or more through holes includes:

[0010] A metal plate including a first surface and a second surface located on the opposite side of the first surface;

[0011] The through hole penetrating from the first surface side of the metal plate to the second surface side; and

[0012] A flat region located between two adjacent through holes when the vapor deposition mask is viewed from the second surface side,

[0013] The through holes are arranged in a staggered manner in a first direction and a second direction when viewed from above,

[0014] The flat region includes a first flat region located on one side of a first center line and a second flat region located on the other side of the first center line,

[0015] The first center line passes through the center points of two adjacent through holes in the first direction,

[0016] The first flat region includes a portion where the size of the first flat region in the first direction increases as it moves away from the first center line,

[0017] The second flat region includes a portion where the size of the second flat region in the first direction increases as it moves away from the first center line.

[0018] According to an embodiment of the present invention, it is possible to suppress defective conditions such as deformation of the vapor deposition mask and to suppress the generation of shadows. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a top view showing an example of an organic EL display device.

[0020] Figure 2 is a cross-sectional view of the organic EL display device viewed from the II-II direction Figure 1 of.

[0021] Figure 3FIG. is a diagram showing an evaporation apparatus equipped with an evaporation mask apparatus according to an embodiment of the present invention.

[0022] Figure 4 FIG. is a plan view showing an example of an evaporation mask apparatus.

[0023] Figure 5A FIG. is a view showing an example of the effective area of the evaporation mask of the evaporation mask apparatus as viewed from the second surface side Figure 4 in a plan view.

[0024] Figure 5B FIG. is a view showing Figure 5A the through-hole area of the through-hole in a plan view.

[0025] Figure 6 FIG. is Figure 5A an example of a cross-sectional view of the evaporation mask along line A-A.

[0026] Figure 7 FIG. is Figure 5A an example of a cross-sectional view of the evaporation mask along line B-B.

[0027] Figure 8 FIG. is Figure 5A an example of a cross-sectional view of the evaporation mask along line C-C.

[0028] Figure 9 FIG. is a view showing Figure 5A the first flat area and the second flat area of the evaporation mask in a plan view.

[0029] Figure 10 FIG. is a schematic view for generally explaining an example of a method for manufacturing an evaporation mask.

[0030] Figure 11 FIG. is a view showing the step of forming a first resist layer and a second resist layer on a metal plate.

[0031] Figure 12 FIG. is a view showing the step of patterning the first resist layer and the second resist layer.

[0032] Figure 13 FIG. is a view showing the first surface etching step.

[0033] Figure 14 FIG. is a view showing the second surface etching step.

[0034] Figure 15 FIG. is a view showing the second surface etching step.

[0035] Figure 16 FIG. is a plan view showing an example of the first flat area and the second flat area of the evaporation mask.

[0036] Figure 17It is a top view showing an example of a first flat region and a second flat region of an evaporation mask.

[0037] Figure 18 It is a top view showing an example of a situation of observing an effective region of an evaporation mask from the second surface side.

[0038] Figure 19 It is Figure 18 An example of a cross-sectional view of the evaporation mask along line D-D.

[0039] Figure 20 It is showing Figure 18 A top view of the first flat region and the second flat region of

[0040] Figure 21 It is a cross-sectional view showing an example of a metal plate provided with a patterned second surface resist layer.

[0041] Figure 22 It is a view showing an example of a second surface etching process.

[0042] Figure 23 It is a view showing an example of a first surface processing process.

[0043] Figure 24 It is a view showing the structure and evaluation results of the evaporation mask in the examples. Detailed Description

[0044] In this specification and these drawings, unless otherwise specified, terms such as "substrate", "base material", "plate", "sheet", or "film" that represent a substance that forms the basis of a certain structure are not distinguished from each other only based on the difference in name.

[0045] In this specification and these drawings, unless otherwise specified, for terms such as "parallel", "orthogonal", etc. that define shapes, geometric conditions, and their degrees, or values of lengths, angles, etc., they are not limited to strict meanings, but are interpreted to include ranges to the extent that the same functions can be expected.

[0046] In this specification and these drawings, unless otherwise specified, when a certain structure such as a certain component or a certain region is "above" or "below", "upper side" or "lower side", or "above" or "below" another structure such as another component or another region, it includes the case where a certain structure is in direct contact with another structure. In addition, it also includes the case where another structure is included between a certain structure and another structure, that is, the case of indirect contact. Unless otherwise specified, in statements such as "above", "upper side", "above", or "below", "lower side", "below", the up-down direction can be reversed.

[0047] In this specification and the accompanying drawings, unless otherwise specified, the same reference numerals or similar reference numerals are assigned to the same part or parts having the same function, and repeated descriptions thereof are sometimes omitted. For ease of explanation, the scale of the drawings is sometimes different from the actual scale, and sometimes a part of the structure is omitted from the drawings.

[0048] In this specification and the accompanying drawings, unless otherwise specified, one embodiment of this specification can be combined with other embodiments within a range that does not cause contradictions. Other embodiments can also be combined with each other within a range that does not cause contradictions.

[0049] In this specification and the accompanying drawings, unless otherwise specified, when multiple processes are disclosed regarding a manufacturing method or the like, other processes that are not disclosed can be implemented between the disclosed processes. The order of the disclosed processes is arbitrary within a range that does not cause contradictions.

[0050] In this specification and the accompanying drawings, unless otherwise specified, the numerical range represented by the symbol "~" includes the numerical values before and after the symbol "~". For example, the numerical range defined by the expression "34~38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less".

[0051] Hereinafter, one embodiment of the present invention will be described in detail with reference to the accompanying drawings. The embodiments shown below are examples of the embodiments of the present invention, and the present invention is not limited to these embodiments for interpretation.

[0052] The first aspect of the present invention is an evaporation mask that includes two or more through-holes. Among them, the evaporation mask includes:

[0053] A metal plate that includes a first surface and a second surface located on the opposite side of the first surface;

[0054] The through-holes that penetrate from the first surface side of the metal plate to the second surface side; and

[0055] A flat region that is located between two adjacent through-holes when observing the evaporation mask from the second surface side,

[0056] The through-holes are arranged in a staggered manner in a first direction and a second direction when viewed from above,

[0057] The flat region includes a first flat region located on one side of a first center line and a second flat region located on the other side of the first center line,

[0058] The first center line passes through the center points of two adjacent through-holes in the first direction,

[0059] The above-mentioned first flat region includes a portion where the size of the first flat region in the above-mentioned first direction increases as it moves away from the above-mentioned first center line.

[0060] The above-mentioned second flat region includes a portion where the size of the second flat region in the above-mentioned first direction increases as it moves away from the above-mentioned first center line.

[0061] In the second aspect of the present invention, in the evaporation mask of the first aspect, the first flat region and the second flat region may be continuous.

[0062] In the third aspect of the present invention, in the evaporation mask of the first aspect, the first flat region and the second flat region may be discontinuous.

[0063] In the fourth aspect of the present invention, in the evaporation masks of the first to third aspects respectively, when observing the evaporation mask from the second surface side, two adjacent through holes in the second direction may be connected.

[0064] In the fifth aspect of the present invention, the evaporation masks of the first to third aspects respectively may have a third flat region located between two adjacent through holes in the second direction when observing the evaporation mask from the second surface side.

[0065] In the sixth aspect of the present invention, in the evaporation mask of the first aspect, the first flat region and the second flat region may be continuous, and when observing the evaporation mask from the second surface side, two adjacent through holes in the second direction may be connected.

[0066] The size of the portion of the first flat region overlapping with the first center line in the first direction may be 0.90 times or less of the distance between the ends of a pair of contours of the first flat region facing the through hole in the first direction.

[0067] In the seventh aspect of the present invention, in the evaporation masks of the first or sixth aspects respectively, the first flat region and the second flat region may be continuous, and when observing the evaporation mask from the second surface side, two adjacent through holes in the second direction may be connected.

[0068] The size of the portion of the flat region overlapping with the third center line in the third direction may be 1.00 times or less of the distance between the ends of a pair of contours of the flat region facing the through hole in the third direction.

[0069] The above-mentioned third direction may be orthogonal to the above-mentioned first direction.

[0070] The above-mentioned third center line can extend through the midpoints of two adjacent through-holes in the above-mentioned first direction and in the above-mentioned third direction.

[0071] In the eighth aspect of the present invention, in the evaporation masks of the above-mentioned first to third aspects, the through-hole may include: a first recess including a first wall surface on the side of the first surface; and a second recess including a second wall surface on the side of the second surface and connected to the first recess.

[0072] The above-mentioned second wall surface includes a portion that is displaced toward the center point of the through-hole as it goes from the side of the second surface toward the side of the first surface.

[0073] In the ninth aspect of the present invention, in the evaporation masks of the above-mentioned first to eighth aspects, when observed from the side of the second surface using a laser microscope, the above-mentioned flat area may exhibit a pixel value equal to or higher than a reference value.

[0074] In the tenth aspect of the present invention, in the evaporation masks of the above-mentioned first to ninth aspects, the thickness of the above-mentioned flat area may be the same as the thickness of the above-mentioned metal plate.

[0075] In the eleventh aspect of the present invention, in the evaporation masks of the above-mentioned first to tenth aspects, the thickness of the above-mentioned metal plate may be 30 μm or less.

[0076] The twelfth aspect of the present invention is a method for manufacturing an evaporation mask, which is a method for manufacturing an evaporation mask including two or more through-holes, and the manufacturing method includes:

[0077] A first surface processing step of forming a first recess including a first wall surface on the first surface of the metal plate; and

[0078] A second surface etching step of etching, using an etching solution, an area of the second surface of the metal plate on the opposite side of the first surface that is not covered by a second surface resist layer to form a second recess including a second wall surface on the second surface.

[0079] The above-mentioned through-hole has the above-mentioned first recess and a second recess connected to the first recess.

[0080] The second surface etching step is performed in such a manner that a flat area remains between two adjacent through-holes when observing the evaporation mask from the side of the second surface.

[0081] The above-mentioned through-holes are arranged in a staggered manner in the first direction and the second direction when viewed from above.

[0082] The above-mentioned flat area includes a first flat area on one side of the first center line between two of the above-mentioned through holes adjacent in the above-mentioned first direction and a second flat area on the other side of the above-mentioned first center line.

[0083] The above-mentioned first center line passes through the center points of two of the above-mentioned through holes adjacent in the above-mentioned first direction.

[0084] The above-mentioned first flat area includes a portion where the size of the above-mentioned first flat area in the above-mentioned first direction increases as it moves away from the above-mentioned first center line.

[0085] The above-mentioned second flat area includes a portion where the size of the above-mentioned second flat area in the above-mentioned first direction increases as it moves away from the above-mentioned first center line.

[0086] In the 13th aspect of the present invention, in the method for manufacturing the evaporation mask according to the 12th aspect, the second surface etching process can be performed in such a way that the first flat area and the second flat area are continuous.

[0087] In the 14th aspect of the present invention, in the method for manufacturing the evaporation mask according to the 12th aspect, the second surface etching process can be performed in such a way that the first flat area and the second flat area are discontinuous.

[0088] In the 15th aspect of the present invention, in the method for manufacturing the evaporation mask according to each of the 12th to 14th aspects, when observing the evaporation mask from the second surface side, the second surface etching process can be performed in such a way that two of the above-mentioned through holes adjacent in the above-mentioned second direction are connected.

[0089] In the 16th aspect of the present invention, in the method for manufacturing the evaporation mask according to each of the 12th to 14th aspects, when observing the evaporation mask from the second surface side, the second surface etching process can be performed in such a way that two of the above-mentioned through holes adjacent in the above-mentioned second direction are not connected.

[0090] In the 17th aspect of the present invention, in the method for manufacturing the evaporation mask according to each of the 12th to 16th aspects, the second surface resist layer can include a first area corresponding to the first flat area and a second area corresponding to the second flat area.

[0091] The above-mentioned first area can include a portion where the size of the above-mentioned first area in the above-mentioned first direction increases as it moves away from the above-mentioned first center line.

[0092] The above-mentioned second area can include a portion where the size of the above-mentioned second area in the above-mentioned first direction increases as it moves away from the above-mentioned first center line.

[0093] In the 18th aspect of the present invention, in the manufacturing method of the evaporation mask in each of the 12th to 17th aspects, when observed from the second surface side using a laser microscope, the flat region may exhibit a pixel value equal to or higher than a reference value.

[0094] In the 19th aspect of the present invention, in the manufacturing method of the evaporation mask in each of the 12th to 18th aspects, the thickness of the metal plate may be 30 μm or less.

[0095] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. The embodiments shown below are examples of the embodiments of the present invention, and the present invention is not limited to these embodiments for interpretation.

[0096] Figure 1 It is a plan view showing an example of the organic EL display device 100. Figure 2 It is a cross-sectional view of the organic EL display device 100 observed from the II-II direction Figure 1 of the organic EL display device 100. Figure 1 In this case, the second electrode layer 141 and the sealing substrate 150 are omitted.

[0097] As Figure 1 and Figure 2 shown, the organic EL display device 100 may include: a substrate 110; and a first electrode layer 120 located on the first surface 111 side of the substrate 110; a first organic layer 131, a second organic layer 132, and a third organic layer 133 located on the first electrode layer 120; and a second electrode layer 141 located on the first organic layer 131, the second organic layer 132, and the third organic layer 133.

[0098] The substrate 110 may be a plate-like member having insulating properties. The substrate 110 preferably has transparency that allows light to pass through. The substrate 110 includes, for example, glass.

[0099] The first electrode layer 120 includes a conductive material. For example, the first electrode layer 120 may include a metal, a conductive metal oxide, other inorganic materials, and the like. The first electrode layer 120 may include a metal oxide having transparency and conductivity such as indium tin oxide.

[0100] As Figure 1 shown by the dashed line in the figure, the first electrode layer 120 may be arranged along a first arrangement direction F1 and a second arrangement direction F2 in a plan view. As Figure 1 shown, the second arrangement direction F2 may be a direction orthogonal to the first arrangement direction F1.

[0101] The first organic layer 131, the second organic layer 132, and the third organic layer 133 may be layers containing an organic semiconductor material. The first organic layer 131, the second organic layer 132, and the third organic layer 133 may be light-emitting layers, respectively. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, respectively. The region including one first electrode layer 120, one evaporation layer, and the second electrode layer 141 when viewed from above may constitute a unit structure such as one pixel of the organic EL display device.

[0102] As Figure 1 shown, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be arranged such that the same type of organic layer is not adjacent in the first arrangement direction F1 and the second arrangement direction F2. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be arranged in the first arrangement direction F1 and the second arrangement direction F2 such that the second organic layer 132 is located between two first organic layers 131 and the second organic layer 132 is located between two third organic layers 133. In this case, when focusing on the second organic layer 132, the second organic layer 132 is arranged in a zigzag pattern at a position where it has moved a distance of 1 / 2 of the arrangement pitch F3 in the first arrangement direction F1 and has moved a distance of 1 / 2 of the arrangement pitch F4 in the second arrangement direction F2. Such an arrangement is also referred to as a staggered arrangement.

[0103] The first organic layer 131, the second organic layer 132, and the third organic layer 133 may each be an evaporation layer formed by attaching an evaporation material to the substrate 110 through through-holes of an evaporation mask corresponding to the pattern of each organic layer.

[0104] The second electrode layer 141 may contain a conductive material such as a metal. Examples of the material constituting the second electrode layer 141 may include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, etc., and their alloys.

[0105] Although not shown, the second electrode layer 141 may also be formed such that there is a gap between the second electrode layers 141 located on two adjacent organic layers 131, 132, 133. Such a second electrode layer 141 may be formed by attaching an evaporation material to the substrate 110 through through-holes of an evaporation mask corresponding to the pattern of the second electrode layer 141.

[0106] As Figure 2As shown, the organic EL display device 100 may include an insulating layer 160 that, when viewed from above, is located between two adjacent first electrode layers 120. The insulating layer 160 may include, for example, polyimide. The insulating layer 160 may overlap with the end portions of the first electrode layer 120. In this case, Figure 1 The dashed line labeled 120 in the figure indicates the outer edge of the region in the first electrode layer 120 that does not overlap with the insulating layer 160. As Figure 1 shown, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may extend in a manner that covers the first electrode layer 120 when viewed from above. The outlines of the first organic layer 131, the second organic layer 132, and the third organic layer 133 may surround the outline of the first electrode layer 120 when viewed from above.

[0107] As Figure 2 shown, the organic EL display device may include a sealing substrate 150 that covers elements on the substrate 110 such as the organic layers 131, 132, 133 on the first surface 111 side of the substrate 110. The sealing substrate 150 can prevent water vapor and the like outside the organic EL display device from entering the inside of the organic EL display device. Thereby, deterioration of the organic layers 131, 132, 133, etc. due to moisture can be suppressed. The sealing substrate 150 includes, for example, glass.

[0108] Although not shown, the organic EL display device may also include a hole injection layer and a hole transport layer located between the first electrode layer 120 and the organic layers 131, 132, 133. The organic EL display device may also include an electron transport layer and an electron injection layer located between the organic layers 131, 132, 133 and the second electrode layer 141. The hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may also be formed by attaching a vapor deposition material to the substrate 110 through through-holes of a vapor deposition mask corresponding to the patterns of the respective layers, in the same manner as the organic layers 131, 132, 133.

[0109] Next, a vapor deposition apparatus 90 for forming the above-described layers such as the organic layers 131, 132, 133 constituting the organic EL display device by vapor deposition will be described. As Figure 3 shown, the vapor deposition apparatus 90 may include a vapor deposition source 94, a heater 96, and a vapor deposition mask device 10 inside thereof. The vapor deposition apparatus 90 may further include an exhaust unit for making the inside of the vapor deposition apparatus 90 a vacuum atmosphere. The vapor deposition source 94 is, for example, a crucible that houses a vapor deposition material 98 such as an organic light-emitting material. The heater 96 heats the vapor deposition source 94 to evaporate the vapor deposition material 98 in a vacuum atmosphere. The vapor deposition mask device 10 is arranged opposite to the crucible 94.

[0110] The evaporation mask device 10 includes at least one evaporation mask 20. The evaporation mask device 10 may also include a frame 15 that supports the evaporation mask 20. The frame 15 can support the evaporation mask 20 in a state of being stretched in its plane direction to suppress bending of the evaporation mask 20.

[0111] As Figure 3 shown, the evaporation mask device 10 is arranged in the evaporation device 90 such that the evaporation mask 20 faces the substrate 110, which is the object to which the evaporation material 98 adheres. The evaporation mask 20 includes a plurality of through-holes 25 through which the evaporation material 98 flying from the evaporation source 94 passes. In the following description, the surface of the evaporation mask 20 on the substrate 110 side is referred to as the first surface 51a, and the surface of the evaporation mask 20 on the opposite side of the first surface 51a is referred to as the second surface 51b.

[0112] As Figure 3 shown, the evaporation mask device 10 may include a magnet 93 disposed on the side of the surface of the substrate 110 opposite to the evaporation mask 20. By providing the magnet 93, the evaporation mask 20 can be attracted toward the magnet 93 by magnetic force. Thereby, the gap between the evaporation mask 20 and the substrate 110 can be reduced or eliminated. Thereby, it is possible to suppress the generation of shadows during the evaporation process and improve the dimensional accuracy and positional accuracy of the evaporation layer formed on the substrate 110.

[0113] Figure 4 is a plan view showing the evaporation mask device 10 as viewed from the first surface 51a side of the evaporation mask 20. As Figure 4 shown, the evaporation mask device 10 may include a plurality of evaporation masks 20. The shape of the evaporation mask 20 may be a rectangle having a length direction and a width direction orthogonal to the length direction. The dimension of the evaporation mask 20 in the length direction is larger than the dimension of the evaporation mask 20 in the width direction. In the following description, the length direction is also referred to as the mask first direction, and the width direction is also referred to as the mask second direction. The plurality of evaporation masks 20 may be arranged in the mask second direction N2. The ends 17a, 17b of each evaporation mask 20 in the mask first direction N1 may be fixed to the frame 15 by welding, for example. Although not shown, the evaporation mask device 10 may also include a component fixed to the frame 15 and partially overlapping the evaporation mask 20 in the thickness direction of the evaporation mask 20. Examples of such components include a component that extends along the mask second direction N2 and supports the evaporation mask 20, a component that overlaps the gap between two adjacent evaporation masks, and the like.

[0114] As Figure 4As shown, the evaporation mask 20 may have a pair of end portions 17a and 17b overlapping with the frame 15 and an intermediate portion 18 located between the end portions 17a and 17b. The intermediate portion 18 may have at least one effective region 22 and a peripheral region 23 surrounding the effective region 22. As Figure 4 shown, the intermediate portion 18 may include a plurality of effective regions 22 arranged at a predetermined interval along the first mask direction N1. The peripheral region 23 may surround the plurality of effective regions 22.

[0115] When forming the layer of the organic EL display device 100 using the evaporation mask 20, one effective region 22 may correspond to one display region of the organic EL display device 100. There is also a case where one effective region 22 corresponds to a plurality of display regions. Although not shown, a plurality of effective regions 22 may also be arranged at a predetermined interval in the second mask direction N2.

[0116] The effective region 22 may have a rectangular contour in plan view. The effective region 22 may have various shaped contours according to the shape of the display region of the organic EL display device. For example, the effective region 22 may have a circular contour.

[0117] Next, the effective region 22 will be described in detail. Figure 5A is a plan view showing an example of the effective region 22 of the evaporation mask 20 as viewed from the second surface 51b side. In the present embodiment, as Figure 5A shown, an example in which the through holes 25 of the evaporation mask 20 are arranged in a staggered pattern will be described. Such an evaporation mask 20 can be used to form a vapor deposition layer arranged in a staggered pattern such as the second organic layer 132 described above.

[0118] The effective region 22 of the evaporation mask 20 includes: a metal plate 51 including a first surface 51a and a second surface 51b; and a plurality of through holes 25 penetrating from the first surface 51a side of the metal plate 51 to the second surface 51b side. As Figure 5A shown, the through holes 25 may be arranged in a first direction D1 and a second direction D2 intersecting the first direction D1 in plan view. The arrangement of the through holes 25 in plan view may be a staggered arrangement similar to the vapor deposition layer. Specifically, as Figure 5A shown, the distance M21 in the first direction D1 between the center points C1 of two adjacent through holes 25 in the second direction D2 may be 1 / 2 of the first center-to-center distance M1 between the center points C1 of two adjacent through holes 25 in the first direction D1.

[0119] Figure 5A In, the symbol D3 represents a third direction D3 orthogonal to the first direction D1. The symbol D4 represents a fourth direction D4 symmetric to the second direction D2 with respect to the third direction D3. As Figure 5AAs shown, a plurality of through-holes 25 may also be arranged in the fourth direction D4. Although not shown, the distance in the first direction D1 between the center points C1 of two adjacent through-holes 25 in the fourth direction D4 may also be 1 / 2 of the first center-to-center distance M1.

[0120] The second center-to-center distance M2 between the center points C1 of two adjacent through-holes 25 in the second direction D2 may be the same as the first center-to-center distance M1, may be greater than the first center-to-center distance M1, or may be less than the first center-to-center distance M1.

[0121] The third center-to-center distance M3 between the center points C1 of two adjacent through-holes 25 in the third direction D3 may be greater than the first center-to-center distance M1. The ratio M3 / M1 of the third center-to-center distance M3 to the first center-to-center distance M1 may be, for example, 1.1 or more, may be 1.3 or more, may be 1.5 or more. M3 / M1 may be, for example, 1.7 or less, may be 2.0 or less, may be 2.5 or less. The range of M3 / M1 may also be determined by a first group consisting of 1.1, 1.3, and 1.5 and / or a second group consisting of 1.7, 2.0, and 2.5. The range of M3 / M1 may also be determined by a combination of any one value included in the above first group and any one value included in the above second group. The range of M3 / M1 may also be determined by a combination of any two values included in the above first group. The range of M3 / M1 may also be determined by a combination of any two values included in the above second group. For example, it may be 1.1 or more and 2.5 or less, may be 1.1 or more and 2.0 or less, may be 1.1 or more and 1.7 or less, may be 1.1 or more and 1.5 or less, may be 1.1 or more and 1.3 or less, may be 1.3 or more and 2.5 or less, may be 1.3 or more and 2.0 or less, may be 1.3 or more and 1.7 or less, may be 1.3 or more and 1.5 or less, may be 1.5 or more and 2.5 or less, may be 1.5 or more and 2.0 or less, may be 1.5 or more and 1.7 or less, may be 1.7 or more and 2.5 or less, may be 1.7 or more and 2.0 or less, may be 2.0 or more and 2.5 or less.

[0122] As Figure 5A shown, the through-hole 25 includes a through region 42. The through region 42 is a region that penetrates the metal plate 51 in a plan view. The through region 42 can be defined by light passing through the through-hole 25. For example, parallel light is incident on one of the first surface 51a or the second surface 51b of the evaporation mask 20 along the normal direction of the metal plate 51, passes through the through-hole 25, and exits from the other of the first surface 51a or the second surface 51b. Then, the region occupied by the exiting light in the plane direction of the metal plate 51 is used as the through region 42 of the through-hole 25. Alternatively, the through region 42 may be defined by observing the evaporation mask 20 using a laser microscope.

[0123] Figure 5B This is a view for explaining the outline and arrangement of the through-hole area 42 of the through-hole 25 when viewed from above. As Figure 5B shown, the outline of the through-hole area 42 of the through-hole 25 may include a pair of first outlines 42a, a pair of third outlines 42c, two second outlines 42b located between the first outline 42a and the third outline 42c, and two fourth outlines 42d located between the first outline 42a and the third outline 42c. In the first direction D1, the first outlines 42a of two adjacent through-holes 25 face each other. In the second direction D2, the second outlines 42b of two adjacent through-holes 25 face each other. In the fourth direction D4, the fourth outlines 42d of two adjacent through-holes 25 face each other.

[0124] The first outline 42a may include a part that extends linearly in the third direction D3, or may include a curved part. When the first outline 42a includes a curved part, the curvature of the curved part of the first outline 42a may be greater than the curvatures of the second outline 42b and the fourth outline 42d.

[0125] The third outline 42c may include a part that extends linearly in the first direction D1, or may include a curved part. When the third outline 42c includes a curved part, the curvature of the curved part of the third outline 42c may be greater than the curvatures of the second outline 42b and the fourth outline 42d.

[0126] Next, the area between the through-holes 25 will be described. As Figure 5A shown, the effective area 22 of the evaporation mask 20 may include a flat area 52 located between two adjacent through-holes 25 when the evaporation mask 20 is viewed from the second surface 51b side. The flat area 52 may also be defined as an area that exhibits a pixel value equal to or greater than a reference value when the evaporation mask 20 is viewed from the second surface 51b side using a laser microscope. The reference value is 1 / 2 of the maximum value of the pixel values that each pixel of the image captured by the laser microscope can take. The laser microscope and observation conditions used are as follows.

[0127] · Laser microscope: VK-X250 manufactured by KEYENCE CORPORATION

[0128] · Laser: Blue (wavelength 408 nm)

[0129] · Objective lens: 50 times

[0130] · Optical zoom: 1.0 times

[0131] · Measurement mode: Surface shape

[0132] · Measurement quality: High speed

[0133] · Use the Real Peak Detection (RPD) function

[0134] As Figure 5A shown, the flat area 52 may include a first flat area 53 and a second flat area 54. The first flat area 53 and the second flat area 54 are located between two through holes 25 adjacent in the first direction D1. The first flat area 53 and the second flat area 54 face each other across the first center line L1 in the third direction D3. The first center line L1 is a straight line passing through the center points C1 of two through holes 25 adjacent in the first direction D1. The first flat area 53 is located on one side of the first center line L1. The second flat area 54 is located on the other side of the first center line L1. In Figure 5A the example shown, one side is the upper side and the other side is the lower side.

[0135] The first flat area 53 and the second flat area 54 are located between the first through hole 25 and the second through hole 25 adjacent in the third direction D3. The first flat area 53 is located between the first through hole 25 and the first center line L1. The second flat area 54 is located between the second through hole 25 and the first center line L1.

[0136] Figure 5A In, the symbol U1 represents the distance between the through area 42 and the flat area 52 in the first direction D1. The distance U1 is defined by the position of the first center line L1. The symbol U3 represents the distance between the through area 42 and the flat area 52 in the third direction D3. The distance U3 is defined by the position of the third center line L3.

[0137] The distance U3 may be the same as the distance U1. The distance U3 may be greater than the distance U1. The ratio U3 / U1 of the distance U3 to the distance U1 may be, for example, 1.01 or more, may be 1.03 or more, may be 1.05 or more, may be 1.10 or more. The distance U3 may also be less than the distance U1. U3 / U1 may be, for example, 0.99 or less, may be 0.97 or less, may be 0.95 or less, may be 0.90 or less.

[0138] As Figure 5A shown, the first flat area 53 and the second flat area 54 may be continuous in the third direction D3. That is, the first flat area 53 and the second flat area 54 may also be connected at the first center line L1. As will be described later, the first flat area 53 and the second flat area 54 may also be discontinuous. That is, there may be a non-flat area between the first flat area 53 and the second flat area 54.

[0139] As Figure 5AAs shown, there may be no flat region 52 between two adjacent through holes 25 in the second direction D2. For example, two adjacent through holes 25 in the second direction D2 may be connected. In this case, the flat region 52 located between two adjacent through holes 25 in the first direction D1 is independent of other flat regions 52 adjacent in the second direction D2 and the fourth direction D4. The symbol U2 represents the distance between two adjacent flat regions 52 in the second direction D2.

[0140] Next, referring to Figure 6 and Figure 7 the cross-sectional structures of the through hole 25 and the flat region 52 will be described. Figure 6 is a cross-sectional view when the evaporation mask 20 of Figure 5A is cut along the A-A line extending in the first direction D1 and passing through the through hole 25. Figure 7 is a cross-sectional view when the evaporation mask of Figure 5A is cut along the B-B line extending in the second direction D2 and passing through the through hole 25.

[0141] As shown in Figure 6 and Figure 7 the through hole 25 may include a first recess 30 and a second recess 35. The first recess 30 includes a first wall surface 31 located on the side of the first surface 51a. The second recess 35 includes a second wall surface 36 located on the side of the second surface 51b. The second recess 35 is connected to the first recess 30 at the connection portion 41. The first wall surface 31 is a surface extending from the first end 32 of the through hole 25 toward the second surface 51b side. The first end 32 refers to the end of the through hole 25 on the first surface 51a. The second wall surface 36 is connected to the first wall surface 31 via the connection portion 41, extends from the connection portion 41 toward the second surface 51b side, and reaches the second end 37. The second end 37 is the end of the through hole 25 on the second surface 51b. As shown in Figure 6 and Figure 7 the second recess 35 may have a larger size than the first recess 30 in the surface direction of the evaporation mask 20. For example, the contour of the second recess 35 may surround the contour of the first recess 30 in a top view.

[0142] As described later, the first recess 30 may be formed by etching the metal plate 51 constituting the evaporation mask 20 from the first surface 51a side. The second recess 35 may be formed by etching the metal plate 51 from the second surface 51b side. The connection portion 41 is the portion where the first recess 30 and the second recess 35 are connected. At the connection portion 41, the direction in which the wall surface of the through hole 25 expands may change. For example, the direction in which the wall surface expands may change discontinuously.

[0143] As shown in Figure 6 and Figure 7As shown, the second wall surface 36 may include a portion that is displaced toward the center point side of the through hole 25 when viewed from the second surface 51b side to the first surface 51a side. Similarly, the first wall surface 31 may include a portion that is displaced toward the center point side of the through hole 25 when viewed from the first surface 51a side to the second surface 51b side. In this case, the opening area of the through hole 25 may be minimized at the connecting portion 41. In other words, the connecting portion 41 may define the outline of the above-mentioned through region 42.

[0144] exist Figure 5A and Figure 6 In FIG. 1 , symbol S1 represents the maximum value of the size of the through region 42 in the first direction D1. Figure 5A and Figure 7 In FIG. 1 , symbol S2 represents the maximum value of the size of the through region 42 in the second direction D2. The size S2 may be larger than the size S1.

[0145] The ratio S2 / S1 of the size S2 to the size S1 may be, for example, greater than 1.01, greater than 1.05, or greater than 1.10. S2 / S1 may be, for example, less than 1.20, less than 1.30, or less than 1.50. The range of S2 / S1 may also be determined by the first group consisting of 1.01, 1.05, and 1.10 and / or the second group consisting of 1.20, 1.30, and 1.50. The range of S2 / S1 may also be determined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of S2 / S1 may also be determined by a combination of any two of the values included in the first group. The range of S2 / S1 may also be determined by a combination of any two of the values included in the second group. For example, it may be greater than 1.01 and less than 1.50, greater than 1.01 and less than 1.30, greater than 1.01 and less than 1.20, greater than 1.01 and less than 1.10, greater than 1.01 and less than 1.05, greater than 1.05 and less than 1.50, greater than 1.05 and less than 1.30, greater than 1.05 and less than 1.20, greater than 1.05 and less than 1.10, greater than 1.10 and less than 1.50, greater than 1.10 and less than 1.30, greater than 1.10 and less than 1.20, greater than 1.20 and less than 1.50, greater than 1.20 and less than 1.30, and greater than 1.30 and less than 1.50.

[0146] Figure 5AIn this case, the symbol S3 represents the maximum value of the size of the through region 42 in the third direction D3. The size S3 can be greater than the size S1. The ratio S3 / S1 of the size S3 to the size S1 can be, for example, 1.01 or more, can be 1.05 or more, can be 1.10 or more. S3 / S1 can be, for example, 1.20 or less, can be 1.30 or less, can be 1.50 or less. The range of S3 / S1 can also be determined by the first group consisting of 1.01, 1.05, and 1.10 and / or the second group consisting of 1.20, 1.30, and 1.50. The range of S3 / S1 can also be determined by a combination of any one value included in the first group described above and any one value included in the second group described above. The range of S3 / S1 can also be determined by a combination of any two values included in the first group described above. The range of S3 / S1 can also be determined by a combination of any two values included in the second group described above. For example, it can be 1.01 or more and 1.50 or less, can be 1.01 or more and 1.30 or less, can be 1.01 or more and 1.20 or less, can be 1.01 or more and 1.10 or less, can be 1.01 or more and 1.05 or less, can be 1.05 or more and 1.50 or less, can be 1.05 or more and 1.30 or less, can be 1.05 or more and 1.20 or less, can be 1.05 or more and 1.10 or less, can be 1.10 or more and 1.50 or less, can be 1.10 or more and 1.30 or less, can be 1.10 or more and 1.20 or less, can be 1.20 or more and 1.50 or less, can be 1.20 or more and 1.30 or less, can be 1.30 or more and 1.50 or less.

[0147] Although not shown, the size S3 can be the same as the size S1 or can be smaller than the size S1.

[0148] Next, the flat region 52 will be described. As Figure 6 shown, the above-mentioned flat region 52 is located on the second surface 51b of the metal plate 51. The thickness T2 of the flat region 52 can be the same as the thickness T1 of the metal plate 51. For example, the ratio T2 / T1 of the thickness T1 to the thickness T2 can be 0.95 or more and 1.05 or less. The thickness T1 of the metal plate 51 is the thickness of the region in the evaporation mask 20 where the first recess 30 and the second recess 35 are not formed, such as the peripheral region 23.

[0149] The thickness T1 of the metal plate 51 can be, for example, 8 μm or more, can be 10 μm or more, can be 13 μm or more, can be 15 μm or more. The thickness T1 of the metal plate 51 can be, for example, 20 μm or less, can be 25 μm or less, can be 30 μm or less, can be 50 μm or less. The range of the thickness T1 of the metal plate 51 can also be determined by the first group composed of 8 μm, 10 μm, 13 μm, and 15 μm and / or the second group composed of 20 μm, 25 μm, 30 μm, and 50 μm. The range of the thickness T1 of the metal plate 51 can also be determined by a combination of any one value included in the above first group and any one value included in the above second group. The range of the thickness T1 of the metal plate 51 can also be determined by a combination of any two values included in the above first group. The range of the thickness T1 of the metal plate 51 can also be determined by a combination of any two values included in the above second group. For example, it can be 8 μm or more and 50 μm or less, can be 8 μm or more and 30 μm or less, can be 8 μm or more and 25 μm or less, can be 8 μm or more and 20 μm or less, can be 8 μm or more and 15 μm or less, can be 8 μm or more and 13 μm or less, can be 8 μm or more and 10 μm or less, can be 10 μm or more and 50 μm or less, can be 10 μm or more and 30 μm or less, can be 10 μm or more and 25 μm or less, can be 10 μm or more and 20 μm or less, can be 10 μm or more and 15 μm or less, can be 10 μm or more and 13 μm or less, can be 13 μm or more and 50 μm or less, can be 13 μm or more and 30 μm or less, can be 13 μm or more and 25 μm or less, can be 13 μm or more and 20 μm or less, can be 13 μm or more and 15 μm or less, can be 15 μm or more and 50 μm or less, can be 15 μm or more and 30 μm or less, can be 15 μm or more and 25 μm or less, can be 15 μm or more and 20 μm or less, can be 20 μm or more and 50 μm or less, can be 20 μm or more and 30 μm or less, can be 20 μm or more and 25 μm or less, can be 25 μm or more and 50 μm or less, can be 25 μm or more and 30 μm or less, can be 30 μm or more and 50 μm or less.

[0150] By making the thickness T1 of the metal plate 51 50 μm or less, it is possible to suppress the deposition material 98 from adhering to the first wall surface 31 and the second wall surface 36 of the through hole 25 before passing through the through hole 25. Thereby, the utilization efficiency of the deposition material 98 can be improved. By making the thickness T1 of the metal plate 51 8 μm or more, it is possible to ensure the strength of the evaporation mask 20 and suppress damage and deformation of the evaporation mask 20.

[0151] As Figure 7As shown, the portion of the second surface 51b between two through-holes 25 adjacent in the second direction D2 is denoted by the symbol 57 and is called the connecting portion. In the present embodiment, the connecting portion 57 is a non-flat region. For example, the maximum value T3 of the thickness of the connecting portion 57 is less than the thickness T1 of the metal plate 51. As Figure 7 shown, the surface of the connecting portion 57 on the second surface 51b side can be curved in a manner that protrudes toward the second surface 51b side in the cross-sectional view.

[0152] The ratio of the maximum value T3 of the thickness of the connecting portion 57 to the thickness T1 of the metal plate 51 can be, for example, 0.10 or more, can be 0.30 or more, can be 0.50 or more, can be 0.60 or more. T3 / T1 can be, for example, 0.70 or less, can be 0.80 or less, can be 0.90 or less, can be 0.97 or less. The range of T3 / T1 can also be determined by a first group consisting of 0.10, 0.30, 0.50, and 0.60 and / or a second group consisting of 0.70, 0.80, 0.90, and 0.97. The range of T3 / T1 can also be determined by a combination of any one value included in the above first group and any one value included in the above second group. The range of T3 / T1 can also be determined by a combination of any two values included in the above first group. The range of T3 / T1 can also be determined by a combination of any two values included in the above second group. For example, it can be 0.10 or more and 0.97 or less, can be 0.10 or more and 0.90 or less, can be 0.10 or more and 0.80 or less, can be 0.10 or more and 0.70 or less, can be 0.10 or more and 0.60 or less, can be 0.10 or more and 0.50 or less, can be 0.10 or more and 0.30 or less, can be 0.30 or more and 0.97 or less, can be 0.30 or more and 0.90 or less, can be 0.30 or more and 0.80 or less, can be 0.30 or more and 0.70 or less, can be 0.30 or more and 0.60 or less, can be 0.30 or more and 0.50 or less, can be 0.50 or more and 0.97 or less, can be 0.50 or more and 0.90 or less, can be 0.50 or more and 0.80 or less, can be 0.50 or more and 0.70 or less, can be 0.50 or more and 0.60 or less, can be 0.60 or more and 0.97 or less, can be 0.60 or more and 0.90 or less, can be 0.60 or more and 0.80 or less, can be 0.60 or more and 0.70 or less, can be 0.70 or more and 0.97 or less, can be 0.70 or more and 0.90 or less, can be 0.70 or more and 0.80 or less, can be 0.80 or more and 0.97 or less, can be 0.80 or more and 0.90 or less, can be 0.90 or more and 0.97 or less.

[0153] The above thicknesses T1, T2, and T3 are calculated by observing the cross-section of the evaporation mask 20 using a scanning electron microscope. For example, in a sample of the evaporation mask 20 that includes the effective region 22 and the peripheral region 23 and includes a cross-section cut along the first direction D1, the thicknesses T1 and T2 are measured at five positions respectively, and their average values are obtained, thereby calculating the thicknesses T1 and T2. In a sample of the evaporation mask 20 that includes the flat region 52 and includes a cross-section cut along the second direction D2, the thickness T3 is measured at five positions respectively, and their average values are obtained, thereby calculating the thickness T3. As the scanning electron microscope, a scanning electron microscope ULTRA55 manufactured by ZEISS can be used.

[0154] Figure 8 is a cross-sectional view when the Figure 5A evaporation mask is cut along the C-C line that extends in the second direction D2 and passes through the flat region 52. Figure 8 In the cross-sectional view of

[0155] Next, referring to Figure 5A and Figure 9 the shape of the flat region 52 in plan view will be further described. Figure 9 is a plan view showing an enlarged view of the Figure 5A first flat region 53 and the second flat region 54.

[0156] As Figure 5A shown, the first flat region 53 may include a portion where the dimension E1 increases as it moves away from the first center line L1 upward. The dimension E1 is the dimension of the first flat region 53 in the first direction D1. The second flat region 54 may include a portion where the dimension E2 increases as it moves away from the first center line L1 downward. The dimension E2 is the dimension of the second flat region 54 in the first direction D1. For example, as Figure 5A shown, the portion of the contour of the flat region 52 facing the through hole 25 in the first direction D1 may also be curved so as to be recessed toward the center side of the flat region 52.

[0157] As Figure 5A shown, the flat region 52 may include a portion where the dimension G1 increases as it moves away from the third center line L3 in the first direction D1. The dimension G1 is the dimension of the flat region 52 in the third direction D3. For example, as Figure 5A shown, the portion of the contour of the flat region 52 facing the through hole 25 in the third direction D3 may also be curved so as to be recessed toward the center side of the flat region 52. The third center line L3 is a straight line that passes through the midpoint C2 of two adjacent through holes 25 in the first direction D1 and extends in the third direction D3.

[0158] Figure 9 In this case, the symbol P1 represents the dimension in the first direction D1 of the portion of the first flat region 53 that overlaps with the first center line L1. The symbol P2 represents the distance in the first direction D1 between the ends Pa and Pb of a pair of first contours 53a of the first flat region 53. The ends Pa and Pb are located at positions away from the first center line L1. The first contour 53a is the portion of the contour of the first flat region 53 that faces the through hole 25 in the first direction D1. As Figure 9 shown, the dimension P1 can be smaller than the distance P2.

[0159] The ratio of the dimension P1 to the distance P2 can be, for example, 0.01 or more, can be 0.10 or more, can be 0.30 or more, can be 0.45 or more. P1 / P2 can be, for example, 0.60 or less, can be 0.70 or less, can be 0.80 or less, can be 0.90 or less. The range of P1 / P2 can also be determined by the first group consisting of 0.01, 0.10, 0.30, and 0.45 and / or the second group consisting of 0.60, 0.70, 0.80, and 0.90. The range of P1 / P2 can also be determined by a combination of any one value included in the first group described above and any one value included in the second group described above. The range of P1 / P2 can also be determined by a combination of any two values included in the first group described above. The range of P1 / P2 can also be determined by a combination of any two values included in the second group described above. For example, it can be 0.01 or more and 0.90 or less, can be 0.01 or more and 0.80 or less, can be 0.01 or more and 0.70 or less, can be 0.01 or more and 0.60 or less, can be 0.01 or more and 0.45 or less, can be 0.01 or more and 0.30 or less, can be 0.01 or more and 0.10 or less, can be 0.10 or more and 0.90 or less, can be 0.10 or more and 0.80 or less, can be 0.10 or more and 0.70 or less, can be 0.10 or more and 0.60 or less, can be 0.10 or more and 0.45 or less, can be 0.10 or more and 0.30 or less, can be 0.30 or more and 0.90 or less, can be 0.30 or more and 0.80 or less, can be 0.30 or more and 0.70 or less, can be 0.30 or more and 0.60 or less, can be 0.30 or more and 0.45 or less, can be 0.45 or more and 0.90 or less, can be 0.45 or more and 0.80 or less, can be 0.45 or more and 0.70 or less, can be 0.45 or more and 0.60 or less, can be 0.60 or more and 0.90 or less, can be 0.60 or more and 0.80 or less, can be 0.60 or more and 0.70 or less, can be 0.70 or more and 0.90 or less, can be 0.70 or more and 0.80 or less, can be 0.80 or more and 0.90 or less.

[0160] Figure 9 In this case, the symbol P3 represents the dimension in the first direction D1 of the portion of the second flat region 54 that overlaps with the first center line L1. The symbol P4 represents the distance in the first direction D1 between the ends Pc and Pd of a pair of first contours 54a of the second flat region 54. The ends Pc and Pd are located at positions away from the first center line L1. The first contour 54a is the portion of the contour of the second flat region 54 that faces the through hole 25 in the first direction D1. When the first flat region 53 and the second flat region 54 are continuous, the dimension P3 of the second flat region 54 is equal to the dimension P1 of the above-mentioned first flat region 53.

[0161] The numerical range of the ratio of the dimension P3 in the second flat region 54 to the distance P4 is the same as the numerical range of the ratio of the dimension P1 in the first flat region 53 to the distance P2, so the description is omitted.

[0162] Figure 9 In this case, the symbol Q1 represents the dimension in the third direction D3 of the portion of the flat region 52 that overlaps with the third center line L3. The symbol Q2 represents the distance in the third direction D3 between the ends Qa and Qb of a pair of second contours 52b of the flat region 52 that includes the first flat region 53 and the second flat region 54. The ends Qa and Qb are located at positions away from the first center line L1. The second contour 52b is the portion of the contour of the flat region 52 that faces the through hole 25 in the third direction D3. As Figure 9 shown, the dimension Q1 can be smaller than the distance Q2. Alternatively, as will be described later, the dimension Q1 can be the same as the distance Q2.

[0163] The ratio of dimension Q1 to distance Q2 can be, for example, 0.30 or more, can be 0.40 or more, can be 0.50 or more, can be 0.60 or more. Q1 / Q2 can be, for example, 0.70 or less, can be 0.80 or less, can be 0.90 or less, can be 1.00 or less. The range of Q1 / Q2 can also be determined by a first group consisting of 0.30, 0.40, 0.50, and 0.60 and / or a second group consisting of 0.70, 0.80, 0.90, and 1.00. The range of Q1 / Q2 can also be determined by a combination of any one value included in the above first group and any one value included in the above second group. The range of Q1 / Q2 can also be determined by a combination of any two values included in the above first group. The range of Q1 / Q2 can also be determined by a combination of any two values included in the above second group. For example, it can be 0.30 or more and 1.00 or less, can be 0.30 or more and 0.90 or less, can be 0.30 or more and 0.80 or less, can be 0.30 or more and 0.70 or less, can be 0.30 or more and 0.60 or less, can be 0.30 or more and 0.50 or less, can be 0.30 or more and 0.40 or less, can be 0.40 or more and 1.00 or less, can be 0.40 or more and 0.90 or less, can be 0.40 or more and 0.80 or less, can be 0.40 or more and 0.70 or less, can be 0.40 or more and 0.60 or less, can be 0.40 or more and 0.50 or less, can be 0.50 or more and 1.00 or less, can be 0.50 or more and 0.90 or less, can be 0.50 or more and 0.80 or less, can be 0.50 or more and 0.70 or less, can be 0.50 or more and 0.60 or less, can be 0.60 or more and 1.00 or less, can be 0.60 or more and 0.90 or less, can be 0.60 or more and 0.80 or less, can be 0.60 or more and 0.70 or less, can be 0.70 or more and 1.00 or less, can be 0.70 or more and 0.90 or less, can be 0.70 or more and 0.80 or less, can be 0.80 or more and 1.00 or less, can be 0.80 or more and 0.90 or less, can be 0.90 or more and 1.00 or less.

[0164] The dimension Q1 can be greater than the dimension P1. That is, the flat region 52 can have a shape extending in the third direction D3. The ratio Q1 / P1 of the dimension Q1 to the dimension P1 can be, for example, 1.05 or more, can be 1.2 or more, can be 1.5 or more, can be 2.0 or more. Q1 / P1 can be, for example, 2.5 or less, can be 5.0 or less, can be 10 or less, can be 50 or less. The range of Q1 / P1 can also be determined by a first group consisting of 1.05, 1.2, 1.5, and 2.0 and / or a second group consisting of 2.5, 5.0, 10, and 50. The range of Q1 / P1 can also be determined by a combination of any one value included in the first group described above and any one value included in the second group described above. The range of Q1 / P1 can also be determined by a combination of any two values included in the first group described above. The range of Q1 / P1 can also be determined by a combination of any two values included in the second group described above. For example, it can be 1.05 or more and 50 or less, can be 1.05 or more and 10 or less, can be 1.05 or more and 5.0 or less, can be 1.05 or more and 2.5 or less, can be 1.05 or more and 2.0 or less, can be 1.05 or more and 1.5 or less, can be 1.05 or more and 1.2 or less, can be 1.2 or more and 50 or less, can be 1.2 or more and 10 or less, can be 1.2 or more and 5.0 or less, can be 1.2 or more and 2.5 or less, can be 1.2 or more and 2.0 or less, can be 1.2 or more and 1.5 or less, can be 1.5 or more and 50 or less, can be 1.5 or more and 10 or less, can be 1.5 or more and 5.0 or less, can be 1.5 or more and 2.5 or less, can be 1.5 or more and 2.0 or less, can be 2.0 or more and 50 or less, can be 2.0 or more and 10 or less, can be 2.0 or more and 5.0 or less, can be 2.0 or more and 2.5 or less, can be 2.5 or more and 50 or less, can be 2.5 or more and 10 or less, can be 2.5 or more and 5.0 or less, can be 5.0 or more and 50 or less, can be 5.0 or more and 10 or less, can be 10 or more and 50 or less.

[0165] The dimension Q2 can be greater than the dimension P2. As the range of the value of the ratio Q2 / P2 of the dimension Q2 to the dimension P2, the range of the value of Q1 / P1 described above can be adopted. Similarly to the case of the dimension Q1 and the dimension P1, the dimension Q2 being greater than the dimension P2 means that the flat region 52 has a shape extending in the third direction D3.

[0166] The third direction D3 can be aligned with the first mask direction N1. For example, the angle formed by the third direction D3 and the first mask direction N1 can be 5.0 degrees or less, can be 3.0 degrees or less, can be 1.0 degrees or less, can be 0.5 degrees or less, can be 0.1 degrees or less. The first mask direction N1 can be determined based on the direction in which the side edge 17c of the evaporation mask 20 extends. When the evaporation mask 20 includes two alignment marks arranged along the side edge 17c, the first mask direction N1 can also be determined based on the direction in which the straight line passing through the centers of the two alignment marks extends.

[0167] The fact that the third direction D3 is aligned with the first mask direction N1 means that the length direction of the flat region 52 is aligned with the length direction of the evaporation mask 20. Sometimes, a tension is applied to the evaporation mask 20 fixed to the frame 15 in the length direction. When the length direction of the flat region 52 is aligned with the length direction of the evaporation mask 20, it is possible to suppress the change in the shape of the flat region 52 due to the tension when viewed from above. Thus, for example, it is possible to suppress the generation of wrinkles or the like in the evaporation mask 20 due to the tension.

[0168] The larger the ratio of the area of the flat region 52 to the area of the effective region 22, the higher the strength of the evaporation mask 20. The higher the strength of the evaporation mask 20, the higher the workability of the process using the evaporation mask 20. For example, it is possible to suppress the deformation or breakage of the evaporation mask 20 when transporting the evaporation mask 20. On the other hand, the larger the ratio of the area of the flat region 52 to the area of the effective region 22, the more likely it is to generate shadows. The dimensions P1, P2, Q1, Q2, etc. of the flat region 52 are determined in consideration of strength and shadows. Examples of the relationship between the dimensions of the flat region 52 and other dimensions are described below.

[0169] Figure 5A The larger the shown distances U1, U2, U3, the more the shadows are suppressed, but the strength of the evaporation mask 20 becomes lower. The dimensions of the flat region 52 can also be determined in consideration of these distances.

[0170] The ratio U2 / Q1 of the distance U2 to the dimension Q1 can be, for example, 0.05 or more, can be 0.15 or more, can be 0.3 or more, can be 0.5 or more. U2 / Q1 can be, for example, 0.8 or less, can be 1.0 or less, can be 1.2 or less, can be 1.5 or less. The range of U2 / Q1 can also be determined by a first group consisting of 0.05, 0.15, 0.3, and 0.5 and / or a second group consisting of 0.8, 1.0, 1.2, and 1.5. The range of U2 / Q1 can also be determined by a combination of any one value included in the first group described above and any one value included in the second group described above. The range of U2 / Q1 can also be determined by a combination of any two values included in the first group described above. The range of U2 / Q1 can also be determined by a combination of any two values included in the second group described above. For example, it can be 0.05 or more and 1.5 or less, can be 0.05 or more and 1.2 or less, can be 0.05 or more and 1.0 or less, can be 0.05 or more and 0.8 or less, can be 0.05 or more and 0.5 or less, can be 0.05 or more and 0.3 or less, can be 0.05 or more and 0.15 or less, can be 0.15 or more and 1.5 or less, can be 0.15 or more and 1.2 or less, can be 0.15 or more and 1.0 or less, can be 0.15 or more and 0.8 or less, can be 0.15 or more and 0.5 or less, can be 0.15 or more and 0.3 or less, can be 0.3 or more and 1.5 or less, can be 0.3 or more and 1.2 or less, can be 0.3 or more and 1.0 or less, can be 0.3 or more and 0.8 or less, can be 0.3 or more and 0.5 or less, can be 0.5 or more and 1.5 or less, can be 0.5 or more and 1.2 or less, can be 0.5 or more and 1.0 or less, can be 0.5 or more and 0.8 or less, can be 0.8 or more and 1.5 or less, can be 0.8 or more and 1.2 or less, can be 0.8 or more and 1.0 or less, can be 1.0 or more and 1.5 or less, can be 1.0 or more and 1.2 or less, can be 1.2 or more and 1.5 or less.

[0171] As the range of the value of the ratio U2 / Q2 of the distance U2 to the dimension Q2, the range of the value of U2 / Q1 described above can be adopted.

[0172] The ratio U3 / Q1 of the distance U3 to the dimension Q1 can be, for example, 0.02 or more, can be 0.05 or more, can be 0.10 or more, can be 0.20 or more. U3 / Q1 can be, for example, 0.30 or less, can be 0.50 or less, can be 0.70 or less, can be 1.00 or less. The range of U3 / Q1 can also be determined by the first group consisting of 0.02, 0.05, 0.10, and 0.20 and / or the second group consisting of 0.30, 0.50, 0.70, and 1.00. The range of U3 / Q1 can also be determined by a combination of any one value included in the above first group and any one value included in the above second group. The range of U3 / Q1 can also be determined by a combination of any two values included in the above first group. The range of U3 / Q1 can also be determined by a combination of any two values included in the above second group. For example, it can be 0.02 or more and 1.00 or less, can be 0.02 or more and 0.70 or less, can be 0.02 or more and 0.50 or less, can be 0.02 or more and 0.30 or less, can be 0.02 or more and 0.20 or less, can be 0.02 or more and 0.10 or less, can be 0.02 or more and 0.05 or less, can be 0.05 or more and 1.00 or less, can be 0.05 or more and 0.70 or less, can be 0.05 or more and 0.50 or less, can be 0.05 or more and 0.30 or less, can be 0.05 or more and 0.20 or less, can be 0.05 or more and 0.10 or less, can be 0.10 or more and 1.00 or less, can be 0.10 or more and 0.70 or less, can be 0.10 or more and 0.50 or less, can be 0.10 or more and 0.30 or less, can be 0.10 or more and 0.20 or less, can be 0.20 or more and 1.00 or less, can be 0.20 or more and 0.70 or less, can be 0.20 or more and 0.50 or less, can be 0.20 or more and 0.30 or less, can be 0.30 or more and 1.00 or less, can be 0.30 or more and 0.70 or less, can be 0.30 or more and 0.50 or less, can be 0.50 or more and 1.00 or less, can be 0.50 or more and 0.70 or less, can be 0.70 or more and 1.00 or less.

[0173] As the range of the value of the ratio U3 / Q2 of the distance U3 to the dimension Q2, the range of the value of U3 / Q1 described above can be adopted.

[0174] Figure 5A The larger the sizes S1, S2, and S3 of the through holes shown, the smaller the influence of the shadow, but the strength of the evaporation mask 20 becomes lower. The size of the flat region 52 can also be determined in consideration of the size of the through holes.

[0175] The ratio S3 / Q1 of the dimension S3 to the dimension Q1 can be, for example, 0.5 or more, can be 0.6 or more, can be 0.7 or more, can be 0.8 or more. S3 / Q1 can be, for example, 1.0 or less, can be 1.2 or less, can be 1.5 or less, can be 2.0 or less. The range of S3 / Q1 can also be determined by a first group consisting of 0.5, 0.6, 0.7, and 0.8 and / or a second group consisting of 1.0, 1.2, 1.5, and 2.0. The range of S3 / Q1 can also be determined by a combination of any one value included in the above first group and any one value included in the above second group. The range of S3 / Q1 can also be determined by a combination of any two values included in the above first group. The range of S3 / Q1 can also be determined by a combination of any two values included in the above second group. For example, it can be 0.5 or more and 2.0 or less, can be 0.5 or more and 1.5 or less, can be 0.5 or more and 1.2 or less, can be 0.5 or more and 1.0 or less, can be 0.5 or more and 0.8 or less, can be 0.5 or more and 0.7 or less, can be 0.5 or more and 0.6 or less, can be 0.6 or more and 2.0 or less, can be 0.6 or more and 1.5 or less, can be 0.6 or more and 1.2 or less, can be 0.6 or more and 1.0 or less, can be 0.6 or more and 0.8 or less, can be 0.6 or more and 0.7 or less, can be 0.7 or more and 2.0 or less, can be 0.7 or more and 1.5 or less, can be 0.7 or more and 1.2 or less, can be 0.7 or more and 1.0 or less, can be 0.7 or more and 0.8 or less, can be 0.8 or more and 2.0 or less, can be 0.8 or more and 1.5 or less, can be 0.8 or more and 1.2 or less, can be 0.8 or more and 1.0 or less, can be 1.0 or more and 2.0 or less, can be 1.0 or more and 1.5 or less, can be 1.0 or more and 1.2 or less, can be 1.2 or more and 2.0 or less, can be 1.2 or more and 1.5 or less, can be 1.5 or more and 2.0 or less.

[0176] As the range of the value of the ratio S3 / Q2 of the dimension S3 to the dimension Q2, the range of the value of the above S3 / Q1 can be adopted.

[0177] The above dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, U3, etc. are calculated by observing the evaporation mask 20 from the second surface 51b side using a laser microscope. For example, the dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, U3 are calculated by measuring the dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, U3 at five positions respectively in a sample of the evaporation mask 20 including the effective region 22 and finding their average values. The laser microscope and observation conditions used are as described below.

[0178] · Laser microscope: VK-X250 manufactured by KEYENCE CORPORATION

[0179] · Laser: Blue (wavelength 408 nm)

[0180] · Objective lens: 50 times

[0181] · Optical zoom: 1.0 times

[0182] · Measurement mode: Surface shape

[0183] · Measurement quality: High speed

[0184] · Use the Real Peak Detection (RPD) function

[0185] Next, mainly with reference to Figures 10 to 15 A method for manufacturing the evaporation mask 20 by processing the metal plate 51 will be described. Figure 10 FIG. is a view showing a manufacturing apparatus 70 for manufacturing the evaporation mask 20 using the metal plate 51. First, a wound body 50 including the metal plate 51 wound around the shaft member 51x is prepared. Next, the metal plate 51 of the wound body 50 is unwound from the shaft member 51x, and the metal plate 51 is sequentially conveyed to Figure 10 the resist film forming apparatus 71, exposure / development apparatus 72, etching apparatus 73, stripping apparatus 74, and separation apparatus 75 shown. Figure 10In the example shown, the metal plate 51 is moved between the devices by being conveyed in the longitudinal direction T thereof, but is not limited thereto. For example, after the metal plate 51 provided with a resist layer is wound around the shaft member 51x again in the resist film forming device 71, the metal plate 51 in the wound state may be supplied to the exposure / development device 72. After the metal plate 51 having a resist layer that has been exposed / developed in the exposure / development device 72 is wound around the shaft member 51x again, the metal plate 51 in the wound state may be supplied to the etching device 73. After the metal plate 51 that has been etched in the etching device 73 is wound around the shaft member 51x again, the metal plate 51 in the wound state may be supplied to the stripping device 74. After the metal plate 51 from which a resin 58 and the like described later have been removed in the stripping device 74 is wound around the shaft member 51x again, the metal plate 51 in the wound state may be supplied to the separation device 75.

[0186] The resist film forming device 71 forms a resist layer on the first surface and the second surface of the metal plate 51. The exposure / development device 72 patterns the resist layer by performing an exposure process and a development process on the resist layer.

[0187] The etching device 73 etches the metal plate 51 using the patterned resist layer as a mask, and forms through-holes 25 in the metal plate 51. In the present embodiment, a plurality of through-holes 25 corresponding to a plurality of evaporation masks 20 are formed in the metal plate 51. In other words, a plurality of evaporation masks 20 are allocated to the metal plate 51. For example, a plurality of through-holes 25 are formed in the metal plate 51 in such a manner that a plurality of effective regions 22 are arranged in the width direction of the metal plate 51 and a plurality of effective regions 22 for the evaporation masks 20 are arranged in the longitudinal direction of the metal plate 51. The stripping device 74 strips the resist pattern and components such as the resin 58 described later provided to protect the unetched portion of the metal plate 51 from damage by the etching solution.

[0188] The separation device 75 performs a separation process, that is, separates the portion of the metal plate 51 in which a plurality of through-holes 25 corresponding to one evaporation mask 20 are formed from the metal plate 51. In this way, the evaporation mask 20 can be obtained.

[0189] Each process of the method for manufacturing the evaporation mask 20 will be described in detail.

[0190] First, a wound body 50 including a metal plate 51 wound around a shaft member 51x is prepared. The thickness of the metal plate 51 is, for example, 5 μm or more and 50 μm or less. As a method for manufacturing the metal plate 51 having a desired thickness, a rolling method, a plating film forming method, or the like can be used.

[0191] As the metal plate 51, for example, a metal plate made of an iron alloy containing nickel can be used. The iron alloy constituting the metal plate may contain cobalt in addition to nickel. For example, as the material of the metal plate 51, an iron alloy in which the total content of nickel and cobalt is 30% by mass or more and 54% by mass or less, and the content of cobalt is 0% by mass or more and 6% by mass or less can be used. As specific examples of the iron alloy containing nickel or nickel and cobalt, an Invar alloy material containing 34% by mass or more and 38% by mass or less of nickel, a Super Invar alloy material containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel, a low thermal expansion Fe-Ni based plating alloy containing 38% by mass or more and 54% by mass or less of nickel, etc. can be cited.

[0192] Next, using the resist film forming apparatus 71, a first surface resist layer 61 is formed on the first surface 51a of the metal plate 51 unwound from the unwinding apparatus, and a second surface resist layer 62 is formed on the second surface 51b. For example, by pasting a dry film containing a photosensitive resist material such as an acrylic-based photocurable resin on the first surface 51a and the second surface 51b of the metal plate 51, the first surface resist layer 61 and the second surface resist layer 62 are formed. Alternatively, a coating liquid containing a negative photosensitive resist material may be applied to the first surface 51a and the second surface 51b of the metal plate 51, and the coating liquid may be dried to thereby form the first surface resist layer 61 and the second surface resist layer 62.

[0193] The thickness of the resist layers 61 and 62 can be, for example, 1 μm or more, can be 3 μm or more, can be 5 μm or more, can be 7 μm or more. The thickness of the resist layers 61 and 62 can be, for example, 10 μm or less, can be 15 μm or less, can be 20 μm or less, can be 25 μm or less. The range of the thickness of the resist layers 61 and 62 can also be determined by a first group consisting of 1 μm, 3 μm, 5 μm, and 7 μm and / or a second group consisting of 10 μm, 15 μm, 20 μm, and 25 μm. The range of the thickness of the resist layers 61 and 62 can also be determined by a combination of any one value included in the above first group and any one value included in the above second group. The range of the thickness of the resist layers 61 and 62 can also be determined by a combination of any two values included in the above first group. The range of the thickness of the resist layers 61 and 62 can also be determined by a combination of any two values included in the above second group. For example, it can be 1 μm or more and 25 μm or less, can be 1 μm or more and 20 μm or less, can be 1 μm or more and 15 μm or less, can be 1 μm or more and 10 μm or less, can be 1 μm or more and 7 μm or less, can be 1 μm or more and 5 μm or less, can be 1 μm or more and 3 μm or less, can be 3 μm or more and 25 μm or less, can be 3 μm or more and 20 μm or less, can be 3 μm or more and 15 μm or less, can be 3 μm or more and 10 μm or less, can be 3 μm or more and 7 μm or less, can be 3 μm or more and 5 μm or less, can be 5 μm or more and 25 μm or less, can be 5 μm or more and 20 μm or less, can be 5 μm or more and 15 μm or less, can be 5 μm or more and 10 μm or less, can be 5 μm or more and 7 μm or less, can be 7 μm or more and 25 μm or less, can be 7 μm or more and 20 μm or less, can be 7 μm or more and 15 μm or less, can be 7 μm or more and 10 μm or less, can be 10 μm or more and 25 μm or less, can be 10 μm or more and 20 μm or less, can be 10 μm or more and 15 μm or less, can be 15 μm or more and 25 μm or less, can be 15 μm or more and 20 μm or less, can be 20 μm or more and 25 μm or less.

[0194] Next, the resist layers 61 and 62 are exposed and developed using an exposure / development apparatus 72. Figure 12 is a cross-sectional view showing the resist layers 61 and 62 patterned by exposure and development.

[0195] Next, using an etching apparatus 73, the metal plate 51 is etched with the resist layers 61 and 62 as a mask. Specifically, first, a first surface etching process is performed. As Figure 13As shown, the first surface etching process includes etching the area of the first surface 51a of the metal plate 51 that is not covered by the first surface resist layer 61 using a first etching solution. For example, the first etching solution is sprayed onto the first surface 51a of the metal plate 51 through the first surface resist layer 61 from a nozzle disposed on the side opposite to the first surface 51a of the conveyed metal plate 51. At this time, the second surface 51b of the metal plate 51 may also be covered with a film or the like that is resistant to the first etching solution.

[0196] As a result of the first surface etching process, as Figure 13 shown, erosion caused by the first etching solution progresses in the area of the metal plate 51 that is not covered by the first surface resist layer 61. Thereby, a plurality of first recesses 30 are formed in the first surface 51a of the metal plate 51. As the first etching solution, for example, an etching solution containing a ferric chloride solution and hydrochloric acid is used.

[0197] Next, as Figure 14 shown, a second surface etching process is performed. The second surface etching process includes etching the area of the second surface 51b of the metal plate 51 that is not covered by the second surface resist layer 62 using a second etching solution. Thereby, second recesses 35 are formed in the second surface 51b of the metal plate 51. The second surface etching process is performed until the first recesses 30 and the second recesses 35 communicate with each other to form a through hole 25. As the second etching solution, similar to the above-mentioned first etching solution, for example, an etching solution containing a ferric chloride solution and hydrochloric acid is used. During the etching of the second surface 51b, as Figure 14 shown, the first recesses 30 may also be covered with a resin 58 that is resistant to the second etching solution.

[0198] As Figure 14 shown, the second surface etching process may be performed such that a portion of the second surface 51b of the metal plate 51 remains between two adjacent second recesses 35 in a specific direction. For example, the second surface etching process may be performed such that a portion of the second surface 51b of the metal plate 51 remains between two adjacent second recesses 35 in the first direction D1. Thereby, as described above Figure 6 shown, a flat area 52 located between two adjacent through holes 25 in the first direction D1 can be obtained. The second surface etching process may also be performed such that the above-mentioned first flat area 53 and the second flat area 54 of the flat area 52 are continuous.

[0199] As Figure 15 shown, the two-surface etching process may be performed such that no portion of the second surface 51b remains between two adjacent second recesses 35 in a specific direction. For example, the second surface etching process may be performed such that no portion of the second surface 51b remains between two adjacent second recesses 35 in the second direction D2. Thereby, as described above Figure 7As shown, a non-flat connection portion 57 located between two through holes 25 adjacent to each other in the second direction D2 can be obtained.

[0200] Next, a stripping step is performed to remove the resin 58 and the resist layers 61 and 62 from the metal plate 51 using the stripping device 74. Next, a separation step is performed to separate the portion of the metal plate 51 where the plurality of through holes 25 corresponding to one vapor deposition mask 20 are formed from the metal plate 51 using the separation device 75. In this way, the vapor deposition mask 20 can be obtained.

[0201] In the evaporation mask 20 of the present embodiment, as described above, the size E1 of the first flat region 53 and the size E2 of the second flat region 54 in the first direction D1 increase as they are away from the first center line L1. This structure is achieved by appropriately adjusting the shapes of the resist layers 61 and 62 when viewed from above and the etching conditions. Examples of etching conditions include temperature, time, and the composition of the etching solution.

[0202] Next, a method for manufacturing an organic EL display device 100 using the vapor deposition mask 20 of the present embodiment is described. The method for manufacturing the organic EL display device 100 includes a vapor deposition step of vapor depositing a vapor deposition material 98 onto a substrate 110 using the vapor deposition mask 20. In the vapor deposition step, first, the vapor deposition mask device 10 is configured in such a manner that the vapor deposition mask 20 and the substrate 110 face each other. At this time, the magnet 93 can be used to make the vapor deposition mask 20 and the substrate 110 fit closely. In addition, the interior of the vapor deposition device 90 is made into a vacuum atmosphere. In this state, by evaporating the vapor deposition material 98 and flying toward the substrate 110 through the vapor deposition mask 20, the vapor deposition material 98 can be attached to the substrate 110 in a pattern corresponding to the through hole 25 of the vapor deposition mask 20 to form a vapor deposition layer.

[0203] In the vapor deposition mask 20 of the present embodiment, the first flat region 53 and the second flat region 54 include portions where the dimensions E1 and E2 increase as they move away from the first center line L1. Therefore, the vapor deposition material 98 having a velocity component in the first direction D1 and moving in a direction inclined relative to the normal direction of the metal plate 51 can be suppressed from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. Thus, the generation of shadows around the first contour 42a of the through hole 25 can be suppressed. By increasing the dimensions E1 and E2 at a position away from the first center line L1, the area of the flat region 52 can be increased compared to a case where the dimensions E1 and E2 are fixed regardless of the position. Thus, the strength of the vapor deposition mask 20 can be improved, and thus the vapor deposition mask 20 can be suppressed from being damaged during transportation, etc.

[0204] In the evaporation mask 20 of the present embodiment, there is an uneven connecting portion 57 between two adjacent through holes 25 in the second direction D2. In other words, two adjacent through holes 25 are connected in the second direction D2. Therefore, it is possible to suppress the deposition material 98 having a velocity component in the second direction D2 and moving in a direction inclined with respect to the normal direction of the metal plate 51 from adhering to the connecting portion 57 or the second wall surface 36 of the second recess 35. As a result, it is possible to suppress the generation of a shadow around the second contour 42b of the through hole 25.

[0205] Various modifications can be made to the above-described embodiment. Hereinafter, other embodiments will be described with reference to the drawings as needed. In the following description and the drawings used in the following description, for parts that can be configured in the same manner as the above-described embodiment, the same reference numerals as those used for the corresponding parts in the above-described embodiment are used, and repeated descriptions are omitted. When it is clear that the effects obtained in the above-described embodiment can also be obtained in other embodiments, the description thereof may sometimes be omitted.

[0206] Figure 16 is a plan view showing an example of the flat region 52 on the second surface 51b side of the evaporation mask 20. In the above-described embodiment, an example is shown in which the size Q1 of the flat region 52 is smaller than the distance Q2 between the ends Qa and Qb of the flat region 52. However, this is not limited thereto, as Figure 16 shown, the size Q1 may also be the same as the distance Q2. For example, the second contour 52b may extend linearly along the first direction D1. In this case, Q1 / Q2 is 1.00.

[0207] In Figure 16 the evaporation mask 20 having the flat region 52 shown, similarly to the case of the above-described embodiment, the first flat region 53 may include a portion where the size E1 increases as it moves away from the first center line L1 upward. The second flat region 54 may include a portion where the size E2 increases as it moves away from the first center line L1 downward. As a result, it is possible to suppress the deposition material 98 having a velocity component in the first direction D1 and moving in a direction inclined with respect to the normal direction of the metal plate 51 from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. Therefore, it is possible to suppress the generation of a shadow around the first contour 42a of the through hole 25. By increasing the sizes E1 and E2 of the first flat region 53 and the second flat region 54 in the first direction D1 at positions away from the first center line L1, the area of the flat region 52 can be increased compared to the case where the sizes E1 and E2 are fixed regardless of the position. As a result, the strength of the evaporation mask 20 can be improved, and thus it is possible to suppress breakage of the evaporation mask 20 during conveyance.

[0208] Figure 17It is a plan view showing an example of the flat area 52 on the side of the second surface 51b of the evaporation mask 20. In the above-described embodiment, an example in which the first flat area 53 and the second flat area 54 are continuous in the third direction D3 is shown. However, it is not limited thereto. As Figure 17 shown, the first flat area 53 and the second flat area 54 may not be continuous in the third direction D3. That is, there may be an uneven area between the first flat area 53 and the second flat area 54. For example, as Figure 17 shown, the area overlapping the first center line L1 between the first flat area 53 and the second flat area 54 may also be an uneven area.

[0209] In Figure 17 the example shown, similarly to the case of the above-described embodiment, the first flat area 53 may include a portion where the dimension E1 increases as it moves away from the first center line L1 toward the upper side. The second flat area 54 may include a portion where the dimension E2 increases as it moves away from the first center line L1 toward the lower side.

[0210] In Figure 17 the example shown, the second surface etching process is performed in such a manner that the first flat area 53 and the second flat area 54 are not continuous. For example, compared with the case of the above-described embodiment, the time of the second surface etching process can be increased. Compared with the case of the above-described embodiment, the dimension of the second surface resist layer 62 in the first direction D1 can be reduced.

[0211] In Figure 17 the evaporation mask 20 having the flat area 52 shown, it is also possible to suppress the evaporation material 98 having a velocity component in the first direction D1 and moving in a direction inclined with respect to the normal direction of the metal plate 51 from adhering to the flat area 52 or the second wall surface 36 of the second recess 35. As a result, it is possible to suppress the generation of a shadow around the first contour 42a of the through hole 25. By increasing the dimensions E1 and E2 at positions away from the first center line L1, the area of the flat area 52 can be increased compared with the case where the dimensions E1 and E2 are fixed regardless of the position. As a result, the strength of the evaporation mask 20 can be improved, and thus it is possible to suppress breakage of the evaporation mask 20 during conveyance and the like.

[0212] Figure 18 It is a plan view showing an example of the case of observing the effective area 22 of the evaporation mask 20 from the side of the second surface 51b. In the above-described embodiment, an example in which there is no flat area 52 between two adjacent through holes 25 in the second direction D2 is shown. However, it is not limited thereto. As Figure 18As shown, the evaporation mask 20 may also have a third flat region 55 located between two through holes 25 adjacent in the second direction D2. That is, the two through holes 25 adjacent in the second direction D2 may not be connected. The evaporation mask 20 may also have a fourth flat region 56 located between two through holes 25 adjacent in the fourth direction D4.

[0213] In Figure 18 the example shown, similarly to the case of the above-described embodiment, the first flat region 53 may include a portion where the dimension E1 increases as it moves away from the first center line L1 toward the upper side. The second flat region 54 may include a portion where the dimension E2 increases as it moves away from the first center line L1 toward the lower side.

[0214] As Figure 18 shown, the first flat region 53 and the second flat region 54 may be continuous in the third direction D3. Alternatively, although not shown, the first flat region 53 and the second flat region 54 may also be discontinuous in the third direction D3.

[0215] Figure 19 is Figure 18 an example of a cross-sectional view of the evaporation mask 20 along the D-D line. Figure 20 is a top view showing Figure 18 the flat region 52. The third flat region 55 may extend in the second direction D2 in a manner connecting the first flat region 53 and the second flat region 54 adjacent in the second direction D2. Similarly, the fourth flat region 56 may extend in the fourth direction D4 in a manner connecting the first flat region 53 and the second flat region 54 adjacent in the fourth direction D4.

[0216] Figure 20 In, the symbol R1 represents the dimension in the second direction D2 of the portion of the third flat region 55 that overlaps with the second center line L2. The second center line L2 is a straight line passing through the center points C1 of two through holes 25 adjacent in the second direction D2. The dimension R1 of the third flat region 55 may be smaller than the dimension P1 of the first flat region 53. Thereby, it is possible to suppress the evaporation material 98 having a velocity component in the second direction D2 and moving in a direction inclined with respect to the normal direction of the metal plate 51 from adhering to the connecting portion 57 or the second wall surface 36 of the second recess 35. Thereby, it is possible to suppress the generation of a shadow around the second contour 42b of the through hole 25.

[0217] The ratio of dimension R1 to dimension P1 can be, for example, 0.01 or more, can be 0.10 or more, can be 0.30 or more, can be 0.45 or more. R1 / P1 can be, for example, 0.60 or less, can be 0.70 or less, can be 0.80 or less, can be 0.90 or less. The range of R1 / P1 can also be determined by the first group consisting of 0.01, 0.10, 0.30, and 0.45 and / or the second group consisting of 0.60, 0.70, 0.80, and 0.90. The range of R1 / P1 can also be determined by a combination of any one value included in the above first group and any one value included in the above second group. The range of R1 / P1 can also be determined by a combination of any two values included in the above first group. The range of R1 / P1 can also be determined by a combination of any two values included in the above second group. For example, it can be 0.01 or more and 0.90 or less, can be 0.01 or more and 0.80 or less, can be 0.01 or more and 0.70 or less, can be 0.01 or more and 0.60 or less, can be 0.01 or more and 0.45 or less, can be 0.01 or more and 0.30 or less, can be 0.01 or more and 0.10 or less, can be 0.10 or more and 0.90 or less, can be 0.10 or more and 0.80 or less, can be 0.10 or more and 0.70 or less, can be 0.10 or more and 0.60 or less, can be 0.10 or more and 0.45 or less, can be 0.10 or more and 0.30 or less, can be 0.30 or more and 0.90 or less, can be 0.30 or more and 0.80 or less, can be 0.30 or more and 0.70 or less, can be 0.30 or more and 0.60 or less, can be 0.30 or more and 0.45 or less, can be 0.45 or more and 0.90 or less, can be 0.45 or more and 0.80 or less, can be 0.45 or more and 0.70 or less, can be 0.45 or more and 0.60 or less, can be 0.60 or more and 0.90 or less, can be 0.60 or more and 0.80 or less, can be 0.60 or more and 0.70 or less, can be 0.70 or more and 0.90 or less, can be 0.70 or more and 0.80 or less, can be 0.80 or more and 0.90 or less.

[0218] Figure 20 In ,

[0218] , and Figure 20 , the symbol R2 represents the dimension in the fourth direction D4 of the portion of the fourth flat region 56 that overlaps the fourth center line L4. The fourth center line L4 is a straight line passing through the center points C1 of two adjacent through holes 25 in the fourth direction D4. The dimension R2 of the fourth flat region 56 can be smaller than P1 of the first flat region 53. Thereby, it is possible to suppress the deposition material 98 having a velocity component in the fourth direction D4 and moving in a direction inclined with respect to the normal direction of the metal plate 51 from adhering to the connection portion 57 or the second wall surface 36 of the second recess 35. Thereby, it is possible to suppress the generation of a shadow around the second contour 42b of the through hole 25.

[0219] The numerical range of the ratio of dimension R2 to dimension P1 is the same as the numerical range of the ratio of dimension R1 to dimension P1, so the description thereof is omitted.

[0220] In Figure 18 In the evaporation mask 20 having the flat region 52 shown, it is also possible to suppress the deposition material 98 having a velocity component in the first direction D1 and moving in a direction inclined with respect to the normal direction of the metal plate 51 from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. Therefore, it is possible to suppress the generation of a shadow around the first contour 42a of the through hole 25. By increasing the dimensions E1 and E2 of the first flat region 53 and the second flat region 54 in the first direction D1 at positions away from the first center line L1, the area of the flat region 52 can be increased as compared with the case where the dimensions E1 and E2 are fixed regardless of the position. Thereby, the strength of the evaporation mask 20 can be improved, and thus it is possible to suppress the evaporation mask 20 from being damaged during conveyance.

[0221] Since the dimension R1 of the third flat region 55 is smaller than the dimension P1 of the first flat region 53, it is possible to suppress the deposition material 98 having a velocity component in the second direction D2 and moving in a direction inclined with respect to the normal direction of the metal plate 51 from adhering to the third flat region 55 or the second wall surface 36 of the second recess 35. Therefore, it is possible to suppress the generation of a shadow around the first contour 42a of the through hole 25. Thereby, it is possible to suppress the generation of a shadow around the second contour 42b of the through hole 25.

[0222] In the above-described embodiment, an example of processing the first surface 51a of the metal plate 51 by performing the first surface etching process is shown. However, the first surface processing process for processing the first surface 51a is not limited to the first surface etching process. For example, the processing on the first surface 51a side can also be performed by irradiating the metal plate 51 with a laser. In this case, as described below, laser processing can be performed instead of the first surface etching process.

[0223] First, as Figure 21 shown, a second surface resist layer 62 is formed on the second surface 51b of the metal plate 51, and the second surface resist layer 62 is patterned. Next, as Figure 22 shown, a second surface etching process is performed: the region of the second surface 51b of the metal plate 51 that is not covered by the second surface resist layer 62 is etched to form a second recess 35 in the second surface 51b. After that, as Figure 23 shown, a laser processing process of irradiating a part of the portion of the metal plate 51 in which the second recess 35 is formed with a laser L is performed. Through the laser processing process, a first recess 30 that penetrates from the second wall surface 36 of the second recess 35 to the first surface 51a is formed. As Figure 23As shown, the laser L can also be irradiated from the second surface 51b side of the metal plate 51.

[0224] In Figures 21 to 23 the example shown, by forming the above-mentioned flat region 52 on the second surface 51b side of the evaporation mask 20, it is also possible to suppress the generation of shadows around the through hole 25.

[0225] As Figure 23 shown, the wall surface 31 of the first concave portion 30 formed by laser processing can be inclined in such a manner that it is displaced toward the center point side of the through hole 25 in a plan view as it goes from the second surface 51b side to the first surface 51a side. In this case, the end portion of the first concave portion 30 on the first surface 51a can be formed into a through region 42 having the smallest opening area of the through hole 25 in a plan view.

[0226] Example

[0227] Next, the embodiments of the present invention will be described more specifically by way of examples. However, the embodiments of the present invention are not limited to the descriptions of the following examples as long as they do not exceed the gist thereof.

[0228] (Example 1)

[0229] Produce an evaporation mask 20 including Figure 9 the flat region 52 shown. The dimensions of each part of the evaporation mask 20 are as follows.

[0230] · The dimension S1 of the through region 42 in the first direction D1: 30 μm

[0231] · The thickness T2 of the flat region 52: 25 μm

[0232] · The dimension P1 of the first flat region 53 overlapping with the first center line L1: 2.0 μm

[0233] · The distance P2 between the end portions Pa and Pb of the first flat region 53: 19 μm

[0234] · The dimension Q1 of the flat region 52 overlapping with the third center line L3: 30 μm

[0235] · The distance Q2 between the end portions Qa and Qb of the flat region 52: 35 μm

[0236] In the flat region 52 of Example 1, the dimension P1 is smaller than the distance P2, and P1 / P2 is 0.11. The dimension Q1 is smaller than the distance Q2, and Q1 / Q2 is 0.86.

[0237] Next, as Figure 4 shown, the evaporation mask 20 is fixed to the frame 15. Specifically, the end portions 17a and 17b are welded to the frame 15 in a state where tension is applied to the evaporation mask 20 in the longitudinal direction.

[0238] Observe the evaporation mask 20 in the state of being welded to the frame 15 using a magnifying glass. No damage or deformation has occurred to the evaporation mask 20. Specifically, it was confirmed that no cracks or bends have occurred to the evaporation mask 20.

[0239] Next, perform an evaporation process: Using the evaporation mask 20, attach the evaporation material 98 to the substrate 110 to form an evaporation layer. As the evaporation material 98, tris(8-hydroxyquinoline)aluminum as an organic light-emitting material is used. As the substrate 110, a glass substrate is used. Set the conditions of the evaporation process so that the thickness of the evaporation layer is 40 nm.

[0240] Next, observe the evaporation layer on the substrate 110 using an optical microscope DMRX HX DC300F manufactured by LEICA and a scanning white interferometer VertScan manufactured by Hitachi High-Technologies. Based on the observation results, calculate the area ratio V of the evaporation layer. The area ratio V of the evaporation layer is the ratio of the effective area V2 of the evaporation layer to the area V1 of the through region 42. Specifically, V = V2 / V1. The effective area V2 is the area of the region of the evaporation layer having a thickness of 95% or more of the target thickness. When the target thickness is 40 nm, the effective area V2 is the area of the region of the evaporation layer having a thickness of 38 nm or more.

[0241] Calculate the area ratio V for each of the 30 evaporation layers on the substrate 110. Among all the evaporation layers, the area ratio V is 0.70 or more.

[0242] Show the configuration and evaluation results of the evaporation mask 20 in Example 1 in Figure 24 .

[0243] In the column of "Strength" in the evaluation results, "OK" means that no cracks or bends have occurred to the evaporation mask 20 in the state of being welded to the frame 15. "NG" means that cracks or bends have occurred to the evaporation mask 20 in the state of being welded to the frame 15 or the evaporation mask 20 before being welded to the frame 15.

[0244] In the column of "Shadow" in the evaluation results, "OK" means that the area ratio V is 0.70 or more for all 30 evaporation layers on the substrate 110. "NG" means that there is an evaporation layer with an insufficient area ratio V.

[0245] (Examples 2 to 6)

[0246] Fabricate an evaporation mask 20 including the Figure 9 shown flat region 52. Show the dimensions of each part of the evaporation masks 20 in Examples 2 to 6 in Figure 24。In the flat regions 52 of Examples 2 to 6, similarly to the case of Example 1, the dimension P1 is smaller than the distance P2. In the flat regions 52 of Examples 2 to 6, P1 / P2 is 0.90 or less. In the flat regions 52 of Examples 2 to 6, similarly to the case of Example 1, the dimension Q1 is smaller than the distance Q2.

[0247] Next, similarly to the case of Example 1, the evaporation masks 20 of Examples 2 to 6 are fixed to the frame 15. No cracks or bends occur in the evaporation masks 20 in the state of being welded to the frame 15.

[0248] Next, similarly to the case of Example 1, using the evaporation masks 20 of Examples 2 to 6, an evaporation material 98 is attached to the substrate 110 to form an evaporation layer. Among the 30 evaporation layers on the substrate 110, the area ratio V is all 0.70 or more.

[0249] (Example 7)

[0250] Manufacture an evaporation mask 20 including Figure 16 the flat region 52 shown. The dimensions of each part of the evaporation mask 20 of Example 7 are shown in Figure 24 In the flat region 52 of Example 7, similarly to the case of Example 1, the dimension P1 is smaller than the distance P2, and P1 / P2 is 0.42. In the flat region 52 of Example 7, the dimension Q1 is equal to the distance Q2, so Q1 / Q2 is 1.00.

[0251] Next, similarly to the case of Example 1, the evaporation mask 20 of Example 7 is fixed to the frame 15. No cracks or bends occur in the evaporation mask 20 in the state of being welded to the frame 15.

[0252] Next, similarly to the case of Example 1, using the evaporation mask 20 of Example 7, an evaporation material 98 is attached to the substrate 110 to form an evaporation layer. Among the 30 evaporation layers on the substrate 110, the area ratio V is all 0.70 or more.

[0253] (Examples 8 to 10)

[0254] Manufacture an evaporation mask 20 including Figure 20 the flat region 52 shown. The dimensions of each part of the evaporation masks 20 of Examples 8 to 10 are shown in Figure 24 In the flat regions 52 of Examples 8 to 10, the dimension R1 is smaller than the dimension P1, and R1 / P1 is 0.90 or less.

[0255] Next, similarly to the case of Example 1, the evaporation masks 20 of Examples 8 to 10 are fixed to the frame 15. No cracks or bends occur in the evaporation masks 20 in the state of being welded to the frame 15.

[0256] Next, in the same manner as in Example 1, the evaporation mask 20 of Examples 8 to 10 was used to attach the evaporation material 98 to the substrate 110 to form an evaporation layer. Among the 30 evaporation layers on the substrate 110, the area ratio V was 0.70 or more for all of them.

[0257] (Examples 11 to 12)

[0258] An evaporation mask 20 including Figure 9 the flat region 52 shown was produced. The dimensions of each part of the evaporation mask 20 of Examples 11 to 12 are shown in Figure 24 . In the flat region 52 of Examples 11 to 12, the dimension P1 was equal to the distance P2, and thus P1 / P2 was 1.00. The evaporation mask 20 of Example 12 was visually inspected, and as a result, cracks and bends were generated in a part of the evaporation mask 20.

[0259] Next, in the same manner as in Example 1, the evaporation mask 20 of Example 11 was fixed to the frame 15. No cracks and bends were generated in the evaporation mask 20 in the state of being welded to the frame 15.

[0260] Next, in the same manner as in Example 1, the evaporation mask 20 of Example 11 was used to attach the evaporation material 98 to the substrate 110 to form an evaporation layer. In a part of the 30 evaporation layers on the substrate 110, the area ratio V was less than 0.70.

[0261] Regarding the evaporation mask 20 of Example 12, the evaluation of shadow was not performed.

[0262] (Examples 13 to 14)

[0263] An evaporation mask 20 including Figure 20 the flat region 52 shown was produced. The dimensions of each part of the evaporation mask 20 of Examples 13 to 14 are shown in Figure 24 . In the flat region 52 of Examples 13 to 14, the dimension P1 was equal to the dimension R1, and thus R1 / P1 was 1.00. The evaporation mask 20 of Example 13 was visually inspected, and as a result, cracks and bends were generated in a part of the evaporation mask 20.

[0264] Next, in the same manner as in Example 1, the evaporation mask 20 of Example 14 was fixed to the frame 15. No cracks and bends were generated in the evaporation mask 20 in the state of being welded to the frame 15.

[0265] Next, in the same manner as in Example 1, the evaporation mask 20 of Example 14 was used to attach the evaporation material 98 to the substrate 110 to form an evaporation layer. In a part of the 30 evaporation layers on the substrate 110, the area ratio V was less than 0.70.

[0266] Regarding the evaporation mask 20 of Example 13, the evaluation of shadow was not performed.

Claims

1. An evaporation mask, which is an evaporation mask including two or more through holes, wherein, This evaporation mask includes: A metal plate, which includes a first surface and a second surface located on the opposite side of the first surface; The through hole, which penetrates from the first surface side of the metal plate to the second surface side; and A flat area, which is located between two adjacent through holes when observing the evaporation mask from the second surface side, The through holes are arranged staggered in a first direction and a second direction when viewed from above, The flat area includes a first flat area located on one side of a first center line and a second flat area located on the other side of the first center line, The first center line passes through the center points of two adjacent through holes in the first direction, The first flat area includes a portion where the size of the first flat area in the first direction increases as it moves away from the first center line, The second flat area includes a portion where the size of the second flat area in the first direction increases as it moves away from the first center line, The first flat area and the second flat area are not continuous.

2. The evaporation mask according to claim 1, wherein, When observing the evaporation mask from the second surface side, two adjacent through holes in the second direction are connected.

3. The evaporation mask according to claim 1, wherein, When observing the evaporation mask from the second surface side, it includes a third flat area located between two adjacent through holes in the second direction.

4. The evaporation mask according to any one of claims 1 to 3, wherein, The through hole includes: a first recess, which includes a first wall surface located on the first surface side; and a second recess, which includes a second wall surface located on the second surface side and is connected to the first recess, The second wall surface includes a portion that is displaced toward the center point of the through hole as it moves from the second surface side toward the first surface side.

5. The evaporation mask according to any one of claims 1 to 3, wherein, When observing from the second surface side using a laser microscope, the flat area exhibits a pixel value above a reference value.

6. The evaporation mask according to any one of claims 1 to 3, wherein, The thickness of the flat area is the same as the thickness of the metal plate.

7. The evaporation mask according to any one of claims 1 to 3, wherein, The thickness of the metal plate is 50 μm or less.

8. A method for manufacturing an evaporation mask, which is a method for manufacturing an evaporation mask including two or more through holes, wherein, This manufacturing method includes: A first surface processing step of forming a first recess including a first wall surface on the first surface of the metal plate; and A second surface etching step of etching an area of the second surface of the metal plate located on the opposite side of the first surface that is not covered by a second surface resist layer using an etching solution to form a second recess including a second wall surface on the second surface, The through hole has the first recess and a second recess connected to the first recess, The second surface etching step is implemented in such a way that a flat area remains between two adjacent through holes when observing the evaporation mask from the second surface side, The through holes are arranged staggered in a first direction and a second direction when viewed from above, The flat area includes a first flat area located on one side of a first center line and a second flat area located on the other side of the first center line between two adjacent through holes in the first direction, The first center line passes through the center points of two adjacent through holes in the first direction, The first flat region includes a portion where the size of the first flat region in the first direction increases as it moves away from the first center line. The second flat region includes a portion where the size of the second flat region in the first direction increases as it moves away from the first center line. The second surface etching process is performed in such a manner that the first flat region and the second flat region are discontinuous.

9. The manufacturing method of the evaporation mask according to claim 8, wherein, When observing the evaporation mask from the second surface side, the second surface etching process is performed in such a manner that two adjacent through holes in the second direction are connected.

10. The method for manufacturing an evaporation mask according to claim 8, wherein, When observing the evaporation mask from the second surface side, the second surface etching process is performed in such a manner that two adjacent through holes in the second direction are not connected.

11. The method for manufacturing an evaporation mask according to any one of claims 8 to 10, wherein, The second surface resist layer includes a first region corresponding to the first flat region and a second region corresponding to the second flat region. The first region includes a portion where the size of the first region in the first direction increases as it moves away from the first center line. The second region includes a portion where the size of the second region in the first direction increases as it moves away from the first center line.

12. The method for manufacturing an evaporation mask according to any one of claims 8 to 10, wherein, When observing from the second surface side using a laser microscope, the flat region exhibits a pixel value equal to or higher than a reference value.

13. The method for manufacturing an evaporation mask according to any one of claims 8 to 10, wherein The thickness of the metal plate is 50 μm or less.

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