Sample preparation device, system, and method for in-situ atomic force microscopy testing of thin film samples

Abstract

The application discloses a sample preparation device, system and method for in-situ testing of a thin film sample by an atomic force microscope, which comprises an insulating resin body, a first electrode, a second electrode, a first wire and a second wire. The first electrode and the second electrode clamp the thin film; a first wide end, a second wide end and a side of the thin film close to the first wide end are flush with the surface of the insulating resin body; in a direction perpendicular to the thin film, the first wide end and the second wide end are correspondingly arranged, and the first narrow end and the second narrow end are staggered. When the first electrode and the second electrode are respectively connected to the two sides of the thin film, the first wide end and the second wide end are correspondingly arranged, and the first narrow end and the second narrow end are staggered, so that the electrodes do not interfere with each other when being led out. The thin film and the sample preparation device form a thin film sample for testing by the atomic force microscope, and more microstructure information of the thin film sample is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of material property testing, in particular to a sample preparation device, system and method for in-situ testing of a thin film sample by an atomic force microscope. BACKGROUND

[0002] An atomic force microscope is used to detect the surface information of a sample by using the interaction force between a nano probe and the surface of the sample to image it. The atomic force microscope can image the surface topography of the sample, and can also measure and image the local surface potential, charge and conductivity of the sample with high spatial resolution. In different test environments, a sample suitable for the atomic force microscope needs to be designed.

[0003] Thin film material is a material formed by depositing atoms, molecules or ions on the surface of a substrate, and the thickness is generally several nanometers to several microns. In addition to the surface topography and grain volume information of the thin film material plane, the cross-section sample can better reflect the thickness, crystallinity, grain size and multi-phase performance information of the thin film. Therefore, the preparation of the cross-section sample of the thin film material is an important link for characterizing the microstructure of the thin film material. In the field of transmission electron microscopy, due to the strict requirement for the thickness of the sample, various thinning techniques have been developed, such as ion thinning technology, focused ion beam technology, ultrathin sectioning technology, etc. The ultrathin sectioning technology can obtain a sample with relatively large size, uniform thickness and flat cross-section. The knife for ultrathin sectioning is a glass knife and a diamond knife. The former has a lower cost and is suitable for softer materials, and the latter has a higher cost and higher hardness. For thin film samples, the cross-section sample is prepared by embedding the thin film with other materials, which requires weak interaction between the thin film material and the embedding material and no additional reaction, and also requires low overall hardness to control the cost. This provides sufficient ideas for researchers to think about the preparation of the cross-section sample.

[0004] In the prior art, the atomic force microscope can obtain sample information at the nanoscale, but the sample information of the test sample area prepared by the existing sample preparation device is not comprehensive.

[0005] Therefore, the prior art still needs to be improved and developed. SUMMARY

[0006] The technical problem to be solved by the present application is to provide a sample preparation device, system and method for in-situ testing of a thin film sample by an atomic force microscope, aiming to solve the problem of insufficient comprehensive sample information of the test sample area prepared by the existing sample preparation device in the prior art.

[0007] The technical solution adopted by the present application to solve the technical problem is as follows:

[0008] A sample preparation device for in-situ testing of a thin film sample by an atomic force microscope, comprising:

[0009] insulating resin body;

[0010] a first electrode and a second electrode embedded in the insulating resin body; two ends of the first electrode are a first wide end and a first narrow end respectively, and two ends of the second electrode are a second wide end and a second narrow end respectively;

[0011] a first wire connected with the first narrow end and extending out of the insulating resin body;

[0012] a second wire connected with the second narrow end and extending out of the insulating resin body;

[0013] wherein the first electrode and the second electrode are arranged in a spaced manner to hold a thin film;

[0014] the first wide end, the second wide end and a side of the thin film close to the first wide end are flush with a surface of the insulating resin body;

[0015] in a direction perpendicular to the thin film, the first wide end and the second wide end are arranged correspondingly, and the first narrow end and the second narrow end are arranged staggeredly.

[0016] The sample preparation device for in-situ testing of thin film samples by atomic force microscope, wherein the first electrode and the second electrode are both trapezoidal electrodes.

[0017] The sample preparation device for in-situ testing of thin film samples by atomic force microscope, wherein the first electrode comprises an adhesion layer and a conductive layer connected with each other, the adhesion layer is used to adhere to the thin film to ensure the adhesion of the conductive layer and the thin film, and the conductive layer is connected with the first wire.

[0018] The second electrode comprises an adhesion layer and a conductive layer connected with each other, the adhesion layer is used to adhere to the thin film to ensure the adhesion of the conductive layer and the thin film, and the conductive layer is connected with the second wire.

[0019] The sample preparation device for in-situ testing of thin film samples by atomic force microscope, wherein the thickness of the adhesion layer is 6-30 nm.

[0020] The thickness of the conductive layer is 30-200 nm.

[0021] The sample preparation device for in-situ testing of thin film samples by atomic force microscope, wherein the adhesion layer is a chromium layer.

[0022] The conductive layer comprises at least one of a copper layer and a gold layer.

[0023] The sample preparation device for in-situ testing of thin film samples by atomic force microscope, wherein the first wire and the second wire are both platinum wires.

[0024] The first wire has a length of 0.8-2cm;

[0025] The second wire has a length of 0.8-2cm;

[0026] The first wire is connected with the first narrow end by silver paste;

[0027] The second wire is connected with the second narrow end by silver paste;

[0028] The insulating resin body is an epoxy resin body.

[0029] A sample preparation system for in-situ testing of thin film sample by atomic force microscope, wherein the sample preparation system is used for preparing the sample preparation device for in-situ testing of thin film sample by atomic force microscope as claimed in any one of the above, and the sample preparation system comprises:

[0030] A base plate for carrying the thin film;

[0031] Two cover plates for covering the thin film;

[0032] An evaporation device for evaporating a first electrode and a second electrode on both sides of the thin film respectively;

[0033] A connecting device for connecting a first wire on the first electrode and a second wire on the second electrode;

[0034] A mold for containing the thin film and forming an insulating resin body outside the thin film;

[0035] A polishing and slicing device for polishing and slicing the side of the insulating resin body where the first wide end is located.

[0036] A sample preparation method for in-situ testing of thin film sample by atomic force microscope, applied to the sample preparation system for in-situ testing of thin film sample by atomic force microscope as claimed in the above, wherein the sample preparation method comprises the steps of:

[0037] Providing a thin film and placing it on the base plate;

[0038] After covering the two edges of the thin film with the two cover plates, evaporating a first electrode on the thin film between the two cover plates by using the evaporation device; wherein the edges of the two cover plates abutting the thin film are not parallel;

[0039] Turning over the thin film, and after covering the two edges of the thin film with the two cover plates, evaporating a second electrode on the thin film between the two cover plates by using the evaporation device; wherein the edges of the two cover plates abutting the thin film are not parallel;

[0040] The first wire is connected to the first electrode and the second wire is connected to the second electrode by the connecting device, and the first wire and the first electrode are in conduction, the second wire and the second electrode are in conduction, and the first wire and the second wire are not in conduction;

[0041] The film with the electrodes and the wires is placed in a mold, and after injecting resin and curing, the mold is removed;

[0042] The first wide end of the insulating resin body is polished and sliced on one side by the polishing and slicing device to obtain a film sample.

[0043] A method for in-situ testing of a film sample by atomic force microscopy, wherein the sample is obtained by the method for preparing a film sample for in-situ testing of a film sample by atomic force microscopy as described above, and the testing method comprises the steps of:

[0044] The film sample is clamped by the clamp;

[0045] An electric field is applied through the first wire and the second wire and in-situ testing is performed.

[0046] Beneficial effects: when the first electrode and the second electrode are connected on both sides of the film, the first wide end and the second wide end are correspondingly arranged, and the first narrow end and the second narrow end are staggered, and in the direction perpendicular to the film, the first electrode and the second electrode form a scissor-like knife head structure, thereby ensuring that the electrodes do not interfere with each other when being extracted. The film sample is formed by the film and the sample preparation device of the present application for testing by atomic force microscopy, which ensures that more microstructure information of the film sample can be obtained. BRIEF DESCRIPTION OF DRAWINGS

[0047] Figure 1 is a structural schematic diagram of a film sample in the present application.

[0048] Figure 2 is a structural schematic diagram of a film covered by a cover plate in the present application.

[0049] Figure 3 is a schematic diagram of forming a first electrode by evaporation in the present application.

[0050] Figure 4 is a schematic diagram of forming a second electrode by evaporation in the present application.

[0051] Figure 5 is a structural schematic diagram of a film with electrodes in the present application.

[0052] Figure 6 is a cross-sectional view of a film with electrodes in the present application.

[0053] Figure 7 is a structural schematic diagram of a film with electrodes and wires in the present application.

[0054] Figure 8 is a structural schematic diagram of the invention for removing the insulating resin body and the conductive wire after the mold is removed.

[0055] Figure 9 is a photo of the thin film sample under different resolutions in the invention.

[0056] Figure 10 is a schematic diagram of the thin film sample in situ testing in the invention.

[0057] Figure 11 is a flow chart of the sample preparation of the thin film sample in the invention.

[0058] Explanation of reference signs:

[0059] 10, thin film; 20, bottom plate; 21, cover plate; 31, first electrode; 311, first wide end; 312, first narrow end; 32, second electrode; 321, second wide end; 322, second narrow end; 33, first conductive wire; 34, second conductive wire; 35, insulating resin body. DETAILED DESCRIPTION

[0060] In order to make the purpose, technical scheme and advantages of the present invention more clear and explicit, the present invention is further described in detail below with reference to the drawings and examples. It should be understood that the specific examples described herein are only used to explain the present invention and do not limit the present invention.

[0061] Please refer to Figures 1-11 , the present invention provides some preferred embodiments of a sample preparation device for in situ testing of a thin film sample by an atomic force microscope.

[0062] As shown in Figure 1 , Figures 4-7 , the sample preparation device for in situ testing of a thin film sample by an atomic force microscope comprises:

[0063] an insulating resin body 35;

[0064] a first electrode 31 and a second electrode 32 embedded in the insulating resin body 35; two ends of the first electrode 31 are a first wide end 311 and a first narrow end 312, respectively, and two ends of the second electrode 32 are a second wide end 321 and a second narrow end 322, respectively;

[0065] a first conductive wire 33 connected with the first narrow end 312 and extending out of the insulating resin body 35;

[0066] a second conductive wire 34 connected with the second narrow end 322 and extending out of the insulating resin body 35;

[0067] The first electrode 31 and the second electrode 32 are arranged in a spaced manner to clamp the thin film 10.

[0068] The first wide end 311, the second wide end 321 and the side of the thin film 10 close to the first wide end 311 are flush with the surface of the insulating resin body 35.

[0069] The first wide end 311 and the second wide end 321 are arranged in correspondence in the direction perpendicular to the thin film 10, and the first narrow end 312 and the second narrow end 322 are arranged in staggered manner.

[0070] It is worth mentioning that the insulating resin body refers to a component made of non-conductive resin material, and the insulating resin body can be an epoxy resin body. The first electrode and the second electrode are respectively connected to the two sides of the thin film for electrical control of the electric field applied to the thin film. The first lead and the second lead are used to connect the electrodes and the external power supply.

[0071] The first wide end, the second wide end and the side of the thin film are flush with the surface of the insulating resin body. The insulating resin body is clamped by the clamp of the atomic force microscope, and the probe of the atomic force microscope can perform in-situ testing on the thin film on the surface. One end of the first lead is connected to the first narrow end, and the other end extends through the insulating resin body. One end of the second lead is connected to the second narrow end, and the other end extends through the insulating resin body.

[0072] The first electrode and the second electrode in the present application are not circular or square electrodes in the prior art. The shape of the first electrode is the same as that of the second electrode. The first electrode and the second electrode are electrodes with a wide width at one end and a narrow width at the other end. The first narrow end of the first electrode is arranged offset from the center of the first wide end, and the second narrow end of the second electrode is arranged offset from the center of the second wide end. When the first electrode and the second electrode are respectively connected to the two sides of the thin film, the first wide end and the second wide end are arranged in correspondence, and the first narrow end and the second narrow end are staggered. In the direction perpendicular to the thin film, the first electrode and the second electrode form a structure similar to the head of a scissors, thereby ensuring that the electrodes do not interfere with each other when being extracted. The thin film sample is formed by the thin film and the sample preparation device of the present application for testing by the atomic force microscope, thereby ensuring that more microstructure information of the thin film sample is obtained, which can satisfy the characterization of the microstructure information of the thin film material thickness, crystallization and multiphase properties, and the sample can be electrically controlled by an external field (specifically, an alternating bias or a direct bias can be applied). The sample preparation device has the advantages of high sample preparation success rate, comprehensive sample information and high spatial resolution.

[0073] In a preferred embodiment of the present application, please refer to Figures 3-4 and Figures 5-7 The first electrode 31 and the second electrode 32 are both trapezoidal electrodes.

[0074] Specifically, the first electrode and the second electrode can adopt a similar trapezoidal electrode, the upper base of the trapezoid is shorter as a narrow end, and the lower base of the trapezoid is longer as a wide end. Since the upper base deviates from the center of the lower base, a right-angle trapezoid can be adopted.

[0075] In a preferred embodiment of the present application, the first electrode 31 comprises an adhesion layer and a conductive layer connected with each other, the adhesion layer is used to adhere to the thin film 10, and the conductive layer is connected with the first wire 33; the second electrode 32 comprises an adhesion layer and a conductive layer connected with each other, the adhesion layer is used to adhere to the thin film 10, and the conductive layer is connected with the second wire 34.

[0076] Specifically, the adhesion layer refers to a layer structure used to adhere to the thin film 10, and the conductive layer refers to a layer structure used for conduction. The conductive layer is made of a material with good conductive performance. In order to make the conductive layer and the thin film 10 fit more closely, an adhesion layer is added between the conductive layer and the thin film 10.

[0077] The adhesion layer is a chromium layer, that is, the adhesion layer is made of chromium Cr material. The conductive layer comprises at least one of a copper layer and a gold layer, that is, the conductive layer is made of copper Cu material and / or gold Au material.

[0078] In a preferred embodiment of the present application, the thickness of the adhesion layer is 6-30 nm; and the thickness of the conductive layer is 30-200 nm.

[0079] Specifically, the thickness of the adhesion layer and the conductive layer can be set as needed, and generally the thickness of the adhesion layer is thinner and the thickness of the conductive layer is thicker. The thickness of the adhesion layer is 6-30 nm, and the thickness of the conductive layer is 30-200 nm. For example, a 10 nm chromium layer is used as the adhesion layer and a 50 nm gold layer is used as the conductive layer.

[0080] In a preferred embodiment of the present application, the first wire 33 and the second wire 34 are both platinum wires. Specifically, a platinum wire can be used as the wire.

[0081] In a preferred embodiment of the present application, the length of the first wire 33 is 0.8-2 cm; and the length of the second wire 34 is 0.8-2 cm.

[0082] Specifically, since the first wire 33 and the second wire 34 need to penetrate the insulating resin body 35, the length of the first wire 33 and the second wire 34 can be set as needed. For example, the length of the first wire 33 is 1 cm, and the length of the second wire 34 is 1 cm.

[0083] In a preferred embodiment of the present application, the first lead wire 33 is connected to the first narrow end 312 by silver paste, and the second lead wire 34 is connected to the second narrow end 322 by silver paste. Specifically, the first lead wire 33 is connected to the first narrow end 312 by silver paste, and the second lead wire 34 is connected to the second narrow end 322 by silver paste.

[0084] The present application further provides a preferred embodiment of a sample preparation system for in-situ testing of a thin film sample by an atomic force microscope, based on the sample preparation device for in-situ testing of a thin film sample by an atomic force microscope according to any one of the above embodiments.

[0085] The sample preparation system for in-situ testing of a thin film sample by an atomic force microscope comprises:

[0086] a base plate 20 for carrying the thin film 10;

[0087] two cover plates 21 for covering the thin film 10;

[0088] an evaporation device for evaporating a first electrode 31 and a second electrode 32 on two sides of the thin film 10, respectively;

[0089] a connecting device for connecting a first lead wire 33 to the first electrode 31 and connecting a second lead wire 34 to the second electrode 32;

[0090] a mold for accommodating the thin film 10 and forming an insulating resin body 35 outside the thin film 10;

[0091] a polishing and slicing device for polishing and slicing one side of the insulating resin body 35 where the first wide end 311 is located.

[0092] As shown in Figure 11 the present application further provides a preferred embodiment of a sample preparation method for in-situ testing of a thin film sample by an atomic force microscope, based on the sample preparation device and system for in-situ testing of a thin film sample by an atomic force microscope according to any one of the above embodiments.

[0093] Specifically, the sample preparation method for in-situ testing of a thin film sample by an atomic force microscope comprises the following steps:

[0094] Step S100, providing a thin film and placing it on the base plate.

[0095] Specifically, the thin film 10 is specifically a thin film material to be in-situ tested, which is cut into a long strip, and the specific size can be determined as needed, for example, a long strip of thin film with a size of about 9*2.5mm is laid flat on the base plate 20. The base plate 20 is a flat plate, which can be a glass slide.

[0096] Step S200, after covering two edges of the film with two cover plates, evaporating a first electrode on the film between the two cover plates by using an evaporation device; wherein the edges of the two cover plates abutting the film are not parallel.

[0097] Specifically, as shown in Figure 2 and Figure 3 , two edges of the film 10 are covered with cover plates 21, specifically, two edges of the long strip-shaped film 10 are covered with two cover plates 21, and a gap is formed between the two cover plates 21, and the first electrode 31 is formed by evaporation in the gap. The two cover plates 21 are not placed in alignment, the edges of the two cover plates 21 towards the film 10 are not parallel, that is, the width of the gap is not fixed, but gradually changes from wide to narrow, the position with wider width of the gap forms a first wide end 311, and the position with narrower width of the gap forms a first narrow end 312. The cover plate 21 can be a cover glass.

[0098] Step S300, after turning over the film, continue to cover two edges of the film with two cover plates, and evaporate a second electrode on the film between the two cover plates by using an evaporation device; wherein the edges of the two cover plates abutting the film are not parallel.

[0099] Specifically, as shown in Figure 4 and Figure 5 , after turning over the film 10, continue to cover two edges of the film 10 with cover plates 21, and evaporate a second electrode 32. When covering two edges of the film 10 with two cover plates 21, the positions of the two cover plates 21 need to be adjusted according to the position of the first electrode 31, the position with wider width of the gap corresponds to the first wide end 311, and a second wide end 321 is formed at the position with wider width of the gap; the position with narrower width of the gap is staggered with the first narrow end 312, and a second narrow end 322 is formed at the position with narrower width of the gap.

[0100] Step S400, connecting a first lead wire to the first electrode and a second lead wire to the second electrode by using a connecting device, and determining that the first lead wire and the first electrode are conductive, the second lead wire and the second electrode are conductive, and the first lead wire and the second lead wire are not conductive.

[0101] Specifically, as shown in Figure 4 and Figure 7 , the first lead wire 33 is connected to the first narrow end 312 of the first electrode 31, and the second lead wire 34 is connected to the second narrow end 322 of the second electrode 32. A multimeter is used to determine the conduction state, which needs to ensure that the first lead wire and the first electrode are conductive, the second lead wire and the second electrode are conductive, and the first lead wire and the second lead wire are not conductive. The connecting end of the first lead wire and the connecting end of the second lead wire can be bonded by silver paste.

[0102] Step S500, placing the film with electrodes and wires in the mold, and injecting resin and curing, removing the mold.

[0103] Specifically, the film is placed in the mold, and resin is injected into the mold, and dried to cure the resin, and then the mold is removed. Specifically, drying can be performed in a drying oven, and the drying temperature is 60°.

[0104] Step S600, using a polishing and slicing device to polish and slice the side of the insulating resin body where the first wide end is located, to obtain a film sample.

[0105] Specifically, first polish the side of the insulating resin body where the first wide end is located with sandpaper to form a pyramid shape, and through the tip of the pyramid, the film can be observed. Then slice to expose the side of the film, specifically, the slice can be transparent, and the obvious difference between the film and the resin can be observed under a light microscope to complete the slicing, to obtain a film sample.

[0106] When polishing, sandpaper or a grinding wheel can be used for polishing, for example, 1000 mesh sandpaper is used for polishing. When slicing, an ultramicrotome is used, and the glass knife is cut 2 microns at a time.

[0107] The present application is suitable for soft film samples and has a weak bonding force with the substrate; the resin described in the present application is epoxy resin, which has the advantages of low hardness, easy to cut, fast curing, and no additional reaction with most film samples and metals and weak interaction force, and is suitable for cutting under an ultramicrotome.

[0108] Based on the sample preparation device of the atomic force microscope in-situ testing of the film sample described in any one of the above embodiments, the present application also provides a preferred embodiment of an atomic force microscope in-situ testing method for a film sample:

[0109] Specifically, as steps S100-S600, the film is prepared based on the sample preparation device to obtain a film sample, and the atomic force microscope in-situ testing is performed based on the film sample.

[0110] As shown in Figures 9-11 The atomic force microscope in-situ testing method for a film sample of the present application embodiment includes the following steps:

[0111] Step A100, clamping the film sample with a clamp.

[0112] Specifically, the film sample is clamped with the clamp of the atomic force microscope.

[0113] Step A200, applying an electric field through the first wire and the second wire and performing in-situ testing.

[0114] Specifically, the first and second conductive lines are connected to an external power source, an electric field is applied to the thin film, and in-situ testing is performed.

[0115] It is to be understood that the application is not limited to the examples described above, which can be modified or adapted in various ways by those skilled in the art without thereby departing from the scope of the present application, as defined in the appended claims.

Claims

1. A sample preparation device for atomic force microscopy in-situ testing of a thin film sample, characterized by, It comprises: an insulating resin body; a first electrode and a second electrode embedded in the insulating resin body; two ends of the first electrode are a first wide end and a first narrow end respectively, and two ends of the second electrode are a second wide end and a second narrow end respectively; a first lead wire connected with the first narrow end and extending out of the insulating resin body; a second lead wire connected with the second narrow end and extending out of the insulating resin body; wherein the first electrode and the second electrode are arranged in a spaced manner to clamp a film; the first wide end, the second wide end and a side of the film close to the first wide end are flush with a surface of the insulating resin body; in a direction perpendicular to the film, the first wide end and the second wide end are arranged correspondingly, and the first narrow end and the second narrow end are arranged staggeredly.

2. The sample preparation device for in-situ atomic force microscope testing of thin film samples of claim 1, wherein, The first electrode and the second electrode are both trapezoidal electrodes.

3. The sample preparation device for in-situ atomic force microscope testing of thin film samples of claim 1, wherein, The first electrode comprises an adhesion layer and a conductive layer connected with each other, the adhesion layer is used for adhering to the film, and the conductive layer is connected with the first lead wire; The second electrode comprises an adhesion layer and a conductive layer connected with each other, the adhesion layer is used for adhering to the film, and the conductive layer is connected with the second lead wire.

4. The sample preparation device for in-situ atomic force microscope testing of thin film samples of claim 3, wherein, The thickness of the adhesion layer is 6-30 nm; The thickness of the conductive layer is 30-200 nm.

5. The sample preparation device for in-situ atomic force microscope testing of thin film samples of claim 3, wherein, The adhesion layer is a chromium layer; The conductive layer comprises at least one of a copper layer and a gold layer.

6. The sample preparation device for in-situ atomic force microscope testing of thin film samples of claim 5, wherein, The first lead wire and the second lead wire are both platinum wires.

7. The sample preparation device for in-situ atomic force microscopy testing of thin film samples according to any one of claims 1 to 6, characterized in that The length of the first lead wire is 0.8-2 cm; The length of the second lead wire is 0.8-2 cm; The first lead wire is connected with the first narrow end by using silver paste; The second lead wire is connected with the second narrow end by using silver paste; The insulating resin body is an epoxy resin body.

8. A sample preparation system for atomic force microscopy in-situ testing of thin film samples, characterized by, The sample preparation system is used for preparing a sample device for in-situ testing of a film sample by an atomic force microscope, and comprises: a base plate for carrying a film; two cover plates for covering the film; an evaporation device for evaporating a first electrode and a second electrode on two sides of the film respectively; a connecting device for connecting a first lead wire to the first electrode and a second lead wire to the second electrode; a mold for accommodating the film and forming an insulating resin body outside the film; a polishing and slicing device for polishing and slicing a side of the insulating resin body where the first wide end is located.

9. A method for preparing a sample for in-situ measurement of a thin film sample by an atomic force microscope, applied to the sample preparation system for in-situ measurement of a thin film sample by an atomic force microscope according to claim 8, characterized by, The sample preparation method comprises the following steps: providing a film and placing it on the base plate; after covering two edges of the film with the two cover plates, evaporating a first electrode on the film between the two cover plates by using the evaporation device; wherein the edges of the two cover plates abutting the film are not parallel; turning over the film, and after covering two edges of the film with the two cover plates, evaporating a second electrode on the film between the two cover plates by using the evaporation device; wherein the edges of the two cover plates abutting the film are not parallel; connecting a first lead wire to the first electrode and a second lead wire to the second electrode by using the connecting device, and determining that the first lead wire and the first electrode are conductive, the second lead wire and the second electrode are conductive, and the first lead wire and the second lead wire are not conductive. The film with electrodes and wires is placed in a mold, resin is injected and cured, and the mold is removed; The first wide end side of the insulating resin body is polished and sliced by using a polishing and slicing device to obtain a film sample.

10. An atomic force microscope in-situ testing method of a thin film sample, characterized by, The sample is a film sample obtained by using the sample preparation method of claim 9 for in-situ testing of the film sample by the atomic force microscope, and the testing method comprises the steps of: The film sample is clamped by using a clamp; An electric field is applied by using the first wire and the second wire, and in-situ testing is performed.

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