High-voltage gallium nitride power device and method of manufacturing the same

Abstract

The application belongs to the technical field of semiconductors, and provides a high-voltage gallium nitride power device and a preparation method thereof. The high-voltage gallium nitride power device comprises an N-type semiconductor substrate, a first P-type doped region, a second P-type doped region, a buffer layer, a barrier layer, an intermediate metal electrode, a drain electrode, a first gate electrode, a second gate electrode and a source electrode. The drain electrode and the intermediate metal electrode are communicated through the barrier layer. When the drain electrode is connected to a voltage, the voltage is output to the intermediate metal electrode through the barrier layer, and then output to the source electrode through the N-type semiconductor substrate channel between the first P-type doped region and the second P-type doped region. In this way, the barrier layer and the intermediate metal electrode serve as a channel for the drain electrode and the drain electrode to communicate, so that the power device can pass a high-density current when turned on, and can withstand a high voltage when turned off due to the barrier layer, thereby improving the voltage resistance of the power device.

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