Boro-phospho-silicate glass dielectric layer, method of making, deposition apparatus and semiconductor device

Abstract

The application discloses a boron-phosphorus-silicate glass dielectric layer preparation method, a deposition device, a boron-phosphorus-silicate glass dielectric layer, a semiconductor device and an electronic device. The deposition device is used to form a boron-phosphorus-silicate glass film on a wafer surface by a chemical vapor deposition method, and high-temperature heating and drying are directly performed in the device for forming the boron-phosphorus-silicate glass film, so that the performance of the dielectric layer is remarkably improved. After the boron-phosphorus-silicate glass film is formed, no additional high-temperature heating device is needed, heat budget is avoided, equipment cost is effectively saved, and pollution risks caused by a transfer process can be avoided. The first gas and the second gas are introduced into the deposition device for a first set time, a dry gas flow is introduced into the deposition device, moisture on the surface of the boron-phosphorus-silicate glass film is taken out through an exhaust port of the deposition device, and tetraethoxysilane and oxygen are introduced into the deposition device, so that USG deposition is performed on the surface of the boron-phosphorus-silicate glass film.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing process technology, and in particular to a borophosphosilicate glass dielectric layer preparation method, deposition equipment, borophosphosilicate glass dielectric layer, semiconductor device and electronic equipment. Background Art

[0002] In chip fabrication, the interlayer dielectric (ILD) layer typically serves as an isolation layer between the active area and the first metal layer M1, isolating the metal conductors from the semiconductor devices. However, the finished active area has a certain step difference. Therefore, BPSG (Boro-phospho-silicate Glass), with its excellent filling properties and high-temperature reflow resistance, is used as the ILD filler material to form an ILD film on the active area surface. However, the main components of BPSG are B2O3, P2O5, and SiO2. Both B2O3 and P2O5 react with moisture in the air. If the BPSG film is exposed to air for a long time, B2O3 and P2O5 react with H2O in the air to form H3BO3 and H3PO4, which then react with each other to form BPO3·3H2O (crystalline hydrate). Because this reaction is reversible, a mixture of H3BO3 and H3PO4 solution and crystalline hydrate forms on the surface of the ILD film. Due to the high surface tension of H2O, the mixture aggregates. This will result in the formation of particles on the surface of the ILD film, affecting the device yield of the chip.

[0003] Currently, two main approaches are used to address this issue: 1. After depositing the ILD layer, the BPSG is reflowed in a high-temperature furnace. Reflow treatment at 800°C for 20 minutes further reduces the step height on the wafer surface. During operation, the furnace undergoes a series of processes: heating, stabilization, reaction, cooling, stabilization, and finally stabilization. Although the bake time is only 20 minutes, the actual thermal budget introduced by this high-temperature reflow process can be as high as several hours. As device feature sizes shrink, the thermal budget introduced by this high-temperature reflow process becomes increasingly severe. Furthermore, at small feature sizes, the diffusion of dopant impurities can have a devastating impact on device performance. In actual production processes, due to limitations in tool capacity, production schedules, and abnormal conditions, deposited wafers are inevitably left for 8–15 days or even longer. This results in the formation of a mixture of H₃BO₃ and H₃PO₄ solutions and crystalline hydrates on the surface of the ILD film. This mixture, due to the high surface tension of H₂O₄, can aggregate, leading to the formation of particles on the ILD film surface. How to make the deposited ILD film have better stability for devices with small feature sizes is an urgent problem that needs to be solved for devices with small feature sizes. Summary of the Invention

[0004] In order to solve the above problems, the embodiments of the present application provide a borophosphosilicate glass dielectric layer preparation method, deposition equipment, borophosphosilicate glass dielectric layer, semiconductor device and electronic device.

[0005] According to the first aspect of the present application, a method for preparing a borophosphosilicate glass dielectric layer is provided, the method comprising: using a deposition device to form a borophosphosilicate glass film on the surface of a wafer by chemical vapor deposition; using the deposition device to heat the wafer to a set temperature, and introducing a first gas and a second gas into the deposition device for a first set time, wherein the first gas is used to absorb residual hydrogen atoms in the process of forming the borophosphosilicate glass film, and the second gas is used to react with the first gas or the second gas is an inert gas; introducing a dry gas flow into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the gas outlet of the deposition device; and introducing tetraethoxysilane and oxygen into the deposition device to deposit USG on the surface of the borophosphosilicate glass film.

[0006] According to one embodiment of the present application, the deposition equipment is used to heat the wafer to a set temperature, and the first gas and the second gas are introduced into the deposition equipment and maintained for a first set time, including: the high-temperature first gas and the second gas are introduced through the back side of the wafer and maintained for the first set time.

[0007] According to one embodiment of the present application, after the dry air flow is introduced into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the gas outlet of the deposition device, the method further includes: introducing the dry second gas into the deposition device for a second set time to remove unreacted first gas and residual moisture through the gas outlet of the deposition device, and the second set time is less than the first set time.

[0008] According to one embodiment of the present application, after the dry air flow is introduced into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the gas outlet of the deposition device, the method further includes: introducing the dry second gas and third gas into the deposition device for a third set time, the third set time being less than the second set time, and the third gas is used to form a non-polar hydrophobic layer on the surface of the wafer to change the surface state of the wafer.

[0009] According to one embodiment of the present application, the first gas is oxygen; and / or the second gas is nitrogen or helium.

[0010] According to a second aspect of an embodiment of the present application, a deposition device is further provided. The deposition device is used to perform chemical vapor deposition on a wafer, and the deposition device has a heating device for heating the wafer to a set temperature.

[0011] According to one embodiment of the present application, the heating device is a fan-shaped heating device.

[0012] According to a third aspect of an embodiment of the present application, a method for preparing a semiconductor device is also provided, the method comprising: adopting the above-mentioned borophosphosilicate glass dielectric layer preparation method to prepare the borophosphosilicate glass dielectric layer of the semiconductor device.

[0013] According to a fourth aspect of the embodiments of the present application, a borophosphosilicate glass dielectric layer is further provided. The borophosphosilicate glass dielectric layer is prepared using the above-mentioned borophosphosilicate glass dielectric layer preparation method.

[0014] According to a fifth aspect of the embodiments of the present application, a semiconductor device is further provided, comprising the above-mentioned borophosphosilicate glass dielectric layer.

[0015] According to a sixth aspect of the embodiments of the present application, an electronic device is also provided, which includes the above-mentioned semiconductor device.

[0016] In the borophosphosilicate glass dielectric layer preparation method, deposition apparatus, borophosphosilicate glass dielectric layer, semiconductor device, and electronic device of the present application, a deposition apparatus is used to form a borophosphosilicate glass thin film on a wafer surface by chemical vapor deposition. The deposition apparatus heats the wafer to a set temperature, introduces a first gas and a second gas into the deposition apparatus for a first set time, introduces a dry gas flow into the deposition apparatus through the deposition apparatus's gas outlet to remove moisture from the surface of the borophosphosilicate glass thin film, and introduces tetraethoxysilane and oxygen into the deposition apparatus to deposit USG on the surface of the borophosphosilicate glass thin film. The first gas is used to absorb residual hydrogen atoms during the formation of the borophosphosilicate glass thin film, and the second gas is used to react with the first gas or is an inert gas. In this manner, after the borophosphosilicate glass thin film is formed, high-temperature heating and drying are performed directly in the borophosphosilicate glass film formation apparatus, significantly improving the performance of the dielectric layer. No additional high-temperature heating equipment is required, thus avoiding the introduction of a thermal budget, effectively saving equipment costs, and avoiding the risk of contamination during transportation.

[0017] It should be understood that the teachings of this application do not necessarily achieve all of the beneficial effects described above, but that specific technical solutions can achieve specific technical effects, and other embodiments of this application can also achieve beneficial effects not mentioned above. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and other objects, features and advantages of the exemplary embodiments of the present application will become readily understood by reading the detailed description below with reference to the accompanying drawings. In the accompanying drawings, several embodiments of the present application are shown in an illustrative and non-limiting manner, in which:

[0019] In the drawings, the same or corresponding reference numerals denote the same or corresponding parts.

[0020] Figure 1 The figure shows a schematic diagram of the process for preparing a borophosphosilicate glass dielectric layer according to an embodiment of the present application;

[0021] Figure 2 A schematic diagram of a process flow for implementing a specific application example of a method for preparing a borophosphosilicate glass dielectric layer according to an embodiment of the present application is shown;

[0022] Figure 3 The conventional method for preparing a borophosphosilicate glass dielectric layer is shown. DETAILED DESCRIPTION

[0023] The principles and spirit of the present application will be described below with reference to several exemplary embodiments. It should be understood that these embodiments are provided solely to enable those skilled in the art to better understand and implement the present application, and are not intended to limit the scope of the present application in any way. Rather, these embodiments are provided to make the present application more thorough and complete, and to fully convey the scope of the present application to those skilled in the art.

[0024] The technical solution of the present application is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0025] Figure 1 The figure shows a schematic diagram of the implementation process of the method for preparing the borophosphosilicate glass dielectric layer according to an embodiment of the present application.

[0026] refer to Figure 1 The method for preparing a borophosphosilicate glass dielectric layer in an embodiment of the present application includes at least the following operation procedures: operation 101, using a deposition device to form a borophosphosilicate glass film on the surface of a wafer by chemical vapor deposition; operation 102, using a deposition device to heat the wafer to a set temperature, and introducing a first gas and a second gas into the deposition device for a first set time, wherein the first gas is used to absorb residual hydrogen atoms in the process of forming the borophosphosilicate glass film, and the second gas is used to react with the first gas or the second gas is an inert gas; operation 103, introducing a dry gas flow into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the gas outlet of the deposition device; operation 104, introducing tetraethoxysilane and oxygen into the deposition device to deposit USG on the surface of the borophosphosilicate glass film.

[0027] Here, we first briefly explain the reasons and basic steps for preparing the borophosphosilicate glass dielectric layer during the semiconductor device manufacturing process.

[0028] BPSG (boron phosphosilicate glass) is characterized by its relatively soft texture. CMP (chemical mechanical polishing) is typically used for planarization at small feature sizes, but the soft BPSG can be severely scratched during polishing. Scratches on the interlayer dielectric (ILD) can directly disrupt the metal interconnects of semiconductor devices, causing short circuits. Therefore, after CMP polishing, a layer of USG (undoped silicate glass) can be deposited on the ILD surface using CVD (chemical vapor deposition) to planarize the ILD surface and form a complete borophosphosilicate glass dielectric layer.

[0029] Semiconductor CVD equipment uses physical processes to transfer atoms or molecules from a source to a substrate surface. Its purpose is to spray particles with specialized properties, such as high strength, wear resistance, heat dissipation, and corrosion resistance, onto a lower-performance substrate, thereby improving the substrate's performance. This application uses the formation of a borophosphosilicate glass dielectric layer on a wafer as an example to illustrate the solution.

[0030] In operation 101 , a deposition device is used to form a borophosphosilicate glass thin film on a wafer surface by chemical vapor deposition.

[0031] In this embodiment of the present application, a borophosphosilicate glass film may be formed on the wafer surface by a common chemical vapor deposition method.

[0032] In operation 102, a deposition device is used to heat the wafer to a set temperature, and a first gas and a second gas are introduced into the deposition device for a first set time. The first gas is used to absorb hydrogen atoms remaining in the process of forming a borophosphosilicate glass film, and the second gas is used to react with the first gas or the second gas is an inert gas.

[0033] To avoid the damage caused by the borophosphosilicate glass film reacting with airborne moisture during transport and waiting for high-temperature reflow and CMP planarization operations after forming the borophosphosilicate glass film on the wafer surface during mass production, and to eliminate the small amount of H (hydrogen) atoms remaining in BPSG due to the deposition conditions of BPSG.

[0034] In this embodiment of the present application, a deposition apparatus is directly used to heat the wafer to a set temperature, and a first gas and a second gas are introduced into the deposition apparatus for a first set time. The first gas is used to absorb residual hydrogen atoms during the formation of the borophosphosilicate glass thin film, and the second gas is used to react with the first gas or is an inert gas.

[0035] For example, the first gas is O2 (oxygen) and the second gas is N2 (nitrogen) or He2 (helium). After the wafer enters the CVD equipment, the wafer temperature can be raised to 400°C and dry O2 and N2 can be introduced for 20 minutes. The O2 can reoxidize the remaining hydrogen atoms to form H2O. The continuous flow of dry air can remove the H2O on the film surface through the CVD equipment's outlet.

[0036] In this embodiment of the present application, a deposition device is used to heat the wafer to a set temperature, and a first gas and a second gas are introduced into the deposition device and maintained for a first set time. This can be achieved in the following way: the high-temperature first gas and second gas introduced through the back side of the wafer are maintained for the first set time.

[0037] In this embodiment of the present application, the first set time can be 20 minutes. In actual application, the first set time can be set based on conditions such as the characteristic size of the semiconductor device, the real-time temperature of the manufacturing workshop, and the real-time air humidity. For example, if the real-time temperature of the manufacturing workshop is high, the first set time can be appropriately shortened, while if the real-time air humidity is high, the first set time can be appropriately increased.

[0038] For example, heating can be achieved by introducing high-temperature N2 or He2 into the back of the wafer. The reaction temperature of CVD equipment is generally between 300℃ and 400℃, which is much higher than the boiling point of water under low pressure, and can achieve the purpose of baking.

[0039] In another embodiment of the present application, an independent Camber (fan-shaped) heating device may be introduced into the CVD equipment to realize the baking function.

[0040] In operation 103 , a dry air flow is introduced into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the air outlet of the deposition device.

[0041] For example, the first gas is O2 (oxygen) and the second gas is N2 (nitrogen) or He2 (helium). O2 can react with the remaining H atoms to generate H2O through reoxidation. Continuously introducing dry air into the deposition equipment can remove moisture from the surface of the borophosphosilicate glass film through the outlet of the deposition equipment.

[0042] In this embodiment of the present application, after a dry gas flow is introduced into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the gas outlet of the deposition device, a dry second gas is also introduced into the deposition device for a second set time to remove unreacted first gas and residual moisture through the gas outlet of the deposition device, and the second set time is less than the first set time.

[0043] In this embodiment of the present application, the second set time may be 30 seconds. Similarly, in actual applications, the second set time may be set based on the first set time according to conditions such as the characteristic size of the semiconductor device, the real-time temperature of the manufacturing workshop, and the real-time air humidity. For example, when the real-time temperature of the manufacturing workshop is high, the second set time may be appropriately reduced, and when the real-time air humidity is high, the second set time may be appropriately increased.

[0044] For example, dry N2 can be introduced for 30 seconds to remove unreacted O2 and residual H2O, thereby stabilizing the gas composition in the reaction chamber of the CVD equipment.

[0045] In another embodiment of the present application, after a dry air flow is introduced into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the gas outlet of the deposition device, a dry second gas and a third gas are also introduced into the deposition device for a third set time, and the third set time is less than the second set time. The third gas is used to form a non-polar hydrophobic layer on the surface of the wafer to change the surface state of the wafer.

[0046] In another embodiment of the present application, the third set time may be 15 seconds. Similarly, in actual applications, the third set time may be set based on the first set time according to conditions such as the characteristic size of the semiconductor device, the real-time temperature of the manufacturing workshop, and the real-time air humidity. For example, when the real-time temperature of the manufacturing workshop is high, the third set time may be appropriately reduced, and when the real-time air humidity is high, the third set time may be appropriately increased.

[0047] The third gas can be IPA (isopropyl alcohol). Similarly, in actual application, IPA can also be replaced by alcohol or acetone, but alcohol and acetone are more harmful, so isopropyl alcohol is generally used in industry.

[0048] For example, dry N2 and IPA (isopropyl alcohol) can be introduced for 15 seconds. By blowing dry hot N2 into the IPA liquid, an N2 gas flow mixed with IPA gas is obtained. IPA gas can change the surface state of the wafer surface and form a non-polar hydrophobic layer. If PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment is used in production, the gas is excited into plasma by a radio frequency electric field, and this step does not require IPA plasma. Therefore, in the actual production process, the frequency and power of the radio frequency electric field of the PECVD equipment need to be reduced.

[0049] In operation 104 , tetraethoxysilane and oxygen are introduced into the deposition equipment to deposit USG on the surface of the borophosphosilicate glass film.

[0050] In another embodiment of the present application, a general USG deposition method may be used, where tetraethoxysilane and oxygen are introduced into a deposition device to deposit USG on the surface of a borophosphosilicate glass film.

[0051] For example, TEOS (tetraethoxysilane) and O2 can be introduced into the reaction chamber of the CVD equipment to deposit USG on the surface of the BPSG film to protect the BPSG film and achieve RECAP (regeneration).

[0052] Figure 2 A flowchart illustrating a specific application example of the method for preparing a borophosphosilicate glass dielectric layer according to an embodiment of the present application is shown.

[0053] refer to Figure 2 The specific application example of the method for preparing the borophosphosilicate glass dielectric layer in the embodiment of the present application includes at least the following operation process:

[0054] In operation 201 , a BPSG film is deposited on a wafer surface using a CVD device.

[0055] In operation 202 , the CVD equipment is heated to 400° C., and oxygen, nitrogen, and isopropyl alcohol are introduced in sequence to improve the properties of the BPSG film.

[0056] Operation 203: Store under normal conditions and wait for dispatch to perform CMP planarization.

[0057] Operation 204 , CMP planarization operation.

[0058] In operation 205 , a USG film is deposited on the BPSG film again using a CVD device.

[0059] Among them, other specific implementation processes of operations 201 to 205 are the same as Figure 1The specific implementation processes of operations 101 to 104 in the illustrated embodiment are similar and will not be repeated here.

[0060] In order to better improve the specific points of the solution of this application, here Figure 3 The conventional method for preparing the dielectric layer of borophosphosilicate glass is shown in FIG. Figure 1-Figure 2 Specifically, the conventional method for preparing a borophosphosilicate glass dielectric layer may include the following operations:

[0061] In operation 301 , a BPSG film is deposited on a wafer surface using a CVD device.

[0062] Operation 302, nitrogen box storage, keeps the wafer dry, and waits for dispatching for furnace tube high temperature reflow, CMP planarization and other operations.

[0063] Operation 303 is a furnace high temperature reflow and CMP planarization operation.

[0064] In operation 304 , a USG film is deposited on the BPSG film again using a CVD device.

[0065] Therefore, compared to Figure 3 In operations 301 to 304, the method for preparing the borophosphosilicate glass dielectric layer of the present application uses a CVD device to deposit a BPSG film on the surface of a wafer, or after the BPSG film is deposited on the surface of a wafer using a CVD device, and then the CVD device is heated to 400°C, and oxygen, nitrogen, and isopropyl alcohol are introduced in sequence to improve the performance of the BPSG film. Through process optimization, baking and RECAP (regeneration) are completed in one step. No additional high-temperature heating equipment is required, which avoids the introduction of a thermal budget, greatly saves production costs, and can avoid the risk of contamination caused by the transportation process.

[0066] In the borophosphosilicate glass dielectric layer preparation method, deposition apparatus, borophosphosilicate glass dielectric layer, semiconductor device, and electronic device of the present application, a deposition apparatus is used to form a borophosphosilicate glass thin film on a wafer surface by chemical vapor deposition. The deposition apparatus heats the wafer to a set temperature, introduces a first gas and a second gas into the deposition apparatus for a first set time, introduces a dry gas flow into the deposition apparatus through the deposition apparatus's gas outlet to remove moisture from the surface of the borophosphosilicate glass thin film, and introduces tetraethoxysilane and oxygen into the deposition apparatus to deposit USG on the surface of the borophosphosilicate glass thin film. The first gas is used to absorb residual hydrogen atoms during the borophosphosilicate glass thin film formation process, and the second gas is used to react with the first gas or is an inert gas. In this manner, after the borophosphosilicate glass thin film is formed, high-temperature heating and drying are performed directly in the borophosphosilicate glass film formation apparatus, significantly improving the performance of the dielectric layer. No additional high-temperature heating equipment is required, avoiding the introduction of a thermal budget, effectively saving equipment costs, and avoiding the risk of contamination during transportation.

[0067] Similarly, based on the above-mentioned method for preparing a borophosphosilicate glass dielectric layer, an embodiment of the present application further provides a deposition device, which is used to perform chemical vapor deposition on a wafer, and the deposition device has a heating device for heating the wafer to a set temperature.

[0068] In this embodiment of the present application, the heating device is a fan-shaped heating device.

[0069] Furthermore, based on the above borophosphosilicate glass dielectric layer preparation method, an embodiment of the present application also provides a semiconductor device preparation method, the method comprising: using the above borophosphosilicate glass dielectric layer preparation method to prepare the borophosphosilicate glass dielectric layer of the semiconductor device.

[0070] Furthermore, based on the above borophosphosilicate glass dielectric layer preparation method, the embodiment of the present application also provides a borophosphosilicate glass dielectric layer, and the borophosphosilicate glass dielectric layer is prepared using the above borophosphosilicate glass dielectric layer preparation method.

[0071] Furthermore, based on the above-mentioned method for preparing the borophosphosilicate glass dielectric layer, an embodiment of the present application further provides a semiconductor device, which includes the above-mentioned borophosphosilicate glass dielectric layer.

[0072] Furthermore, based on the above-mentioned method for preparing the borophosphosilicate glass dielectric layer, an embodiment of the present application further provides an electronic device, which includes the above-mentioned semiconductor device.

[0073] It should be noted that the above description of the embodiments of the deposition equipment, borophosphosilicate glass dielectric layer, semiconductor device and electronic device is different from the above description of the embodiments of the deposition equipment, borophosphosilicate glass dielectric layer, semiconductor device and electronic device. Figures 1 to 2 The description of the embodiment of the method for preparing the borophosphosilicate glass dielectric layer is similar to that described above. Figures 1 to 2 The borophosphosilicate glass dielectric layer preparation method has similar beneficial effects as the embodiment shown in the embodiment, so it will not be repeated here. For technical details not disclosed in the embodiments of the deposition equipment, borophosphosilicate glass dielectric layer, semiconductor device and electronic device of this application, please refer to the aforementioned Figures 1 to 2 The above description is for illustrative purposes only and will not be repeated for the sake of space.

[0074] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0075] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of units is merely a logical function division. In actual implementation, there may be other division methods, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of devices or units can be electrical, mechanical or other forms.

[0076] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units; they may be located in one place or distributed across multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the scheme of this embodiment.

[0077] In addition, all functional units in the embodiments of the present application can be integrated into one processing unit, or each unit can be a separate unit, or two or more units can be integrated into one unit; the above-mentioned integrated units can be implemented in the form of hardware or in the form of hardware plus software functional units.

[0078] Those skilled in the art will understand that all or part of the steps of implementing the above-mentioned method embodiment can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps of the above-mentioned method embodiment; and the aforementioned storage medium includes: mobile storage devices, read-only memories (ROM), magnetic disks or optical disks, and other media that can store program codes.

[0079] Alternatively, if the above-mentioned integrated unit of the present application is implemented in the form of a software function module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiment of the present application is essentially or the part that contributes to the prior art can be embodied in the form of a software product, which is stored in a storage medium and includes a number of instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the methods of each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as mobile storage devices, ROMs, magnetic disks, or optical disks.

[0080] The above are only specific embodiments of the present application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A method for preparing a borophosphosilicate glass dielectric layer, characterized in that: The method comprises: Using deposition equipment, a borophosphosilicate glass film is formed on the wafer surface by chemical vapor deposition; The wafer is heated to a set temperature using the deposition device, and a first gas and a second gas are introduced into the deposition device for a first set time, wherein the first gas is used to absorb residual hydrogen atoms in the process of forming the borophosphosilicate glass film, and the second gas is an inert gas; Introducing a dry air flow into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the air outlet of the deposition device; introducing tetraethoxysilane and oxygen into the deposition device to deposit USG on the surface of the borophosphosilicate glass film; After introducing a dry air flow into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the air outlet of the deposition device, the method further includes: The dry second gas and third gas are introduced into the deposition device for a third set time, wherein the third set time is less than the second set time. The third gas is used to form a non-polar hydrophobic layer on the surface of the wafer to change the surface state of the wafer.

2. The method according to claim 1, characterized in that The step of heating the wafer to a set temperature using the deposition device and introducing a first gas and a second gas into the deposition device for a first set time comprises: The high-temperature first gas and the high-temperature second gas introduced through the back side of the wafer are maintained for a first set time.

3. The method according to claim 1, characterized in that After introducing a dry air flow into the deposition device to remove moisture from the surface of the borophosphosilicate glass film through the air outlet of the deposition device, the method further includes: The dry second gas is introduced into the deposition device for a second set time to remove unreacted first gas and residual moisture through the gas outlet of the deposition device, and the second set time is shorter than the first set time.

4. The method according to any one of claims 1 to 3, characterized in that The first gas is oxygen; and / or, The second gas is nitrogen or helium.

5. A method for preparing a semiconductor device, characterized in that: The method comprises: The borophosphosilicate glass dielectric layer of the semiconductor device is prepared by the borophosphosilicate glass dielectric layer preparation method according to any one of claims 1 to 4.

6. A borophosphosilicate glass dielectric layer, characterized in that: The borophosphosilicate glass dielectric layer is prepared by the borophosphosilicate glass dielectric layer preparation method according to any one of claims 1 to 4.

7. A semiconductor device, characterized in that: The semiconductor device comprises the borophosphosilicate glass dielectric layer according to claim 6.

8. An electronic device, characterized in that: The electronic device includes the semiconductor device according to claim 7.

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