Light emitting device and method of manufacturing the same

Abstract

A light emitting device and a manufacturing method thereof, the light emitting device including a light emitting diode package structure. The light emitting diode package structure includes a circuit structure, a plurality of light emitting diodes, and a package layer. The light emitting diodes are disposed on the circuit structure and electrically connected to the circuit structure. The package layer covers top and side surfaces of the light emitting diodes and side surfaces of the circuit structure.

Description

Technical Field

[0001] This invention relates to a light-emitting device and its manufacturing method. Background Technology

[0002] Light-emitting diodes (LEDs) are electroluminescent semiconductor devices with advantages such as high efficiency, long lifespan, durability, fast response, and high reliability. With significant investment of time and money, the size of LEDs has been shrinking year by year. However, using LEDs in the pixel structure of light-emitting devices remains challenging, especially in devices where each pixel contains red, green, and blue sub-pixels. The small size of each sub-pixel leads to low yield rates in both manufacturing LEDs that fit these small sub-pixels and in transferring the LEDs. Summary of the Invention

[0003] This invention provides a light-emitting device and its manufacturing method, which can improve the problem that the circuit structure in the light-emitting diode package structure is easily damaged during the process.

[0004] At least one embodiment of the present invention provides a light-emitting device. The light-emitting device includes a light-emitting diode (LED) package structure. The LED package structure includes a circuit structure, a plurality of LEDs, and a package layer. The LEDs are disposed on the circuit structure and electrically connected to the circuit structure. The package layer covers the top and side surfaces of the LEDs and the side surfaces of the circuit structure.

[0005] At least one embodiment of the present invention provides a method for manufacturing a light-emitting device, comprising the following steps: Providing a plurality of mutually separated circuit structures and a plurality of light-emitting diodes (LEDs) located on the circuit structures on a carrier substrate. Forming an encapsulation material on the LEDs and circuit structures, wherein the encapsulation material covers the top and side surfaces of the LEDs and the side surfaces of the circuit structures. Cutting the encapsulation material along a plurality of dicing lines to form a plurality of mutually separated encapsulation layers, and forming a plurality of LED encapsulation structures. Each LED encapsulation structure includes a corresponding circuit structure, a plurality of corresponding LEDs, and a corresponding encapsulation layer. The dicing lines are located between the circuit structures.

[0006] Based on the above, since the cutting path is located between the circuit structures, damage to the circuit structures can be avoided when cutting the packaging material. Attached Figure Description

[0007] Figure 1A This is a top view schematic diagram of a light-emitting diode package structure according to an embodiment of the present invention.

[0008] Figure 1B yes Figure 1A A bottom view of the LED package structure.

[0009] Figure 1C It is along Figure 1A A schematic cross-sectional view of line I-I'.

[0010] Figures 2A to 2Q This is a cross-sectional schematic diagram of a method for manufacturing a light-emitting device according to an embodiment of the present invention.

[0011] Figures 3A to 3B This is a cross-sectional schematic diagram of a method for manufacturing a light-emitting device according to an embodiment of the present invention.

[0012] Figure 4A This is a top view schematic diagram of a light-emitting diode package structure according to an embodiment of the present invention.

[0013] Figure 4B yes Figure 4A A bottom view of the LED package structure.

[0014] Figure 4C It is along Figure 4A A schematic cross-sectional view of line I-I'.

[0015] Explanation of reference numerals in the attached figures:

[0016] 1: Light-emitting device

[0017] 10,10A: Light Emitting Diode Package Structure

[0018] 20: Pixel array substrate

[0019] 100: Carrier board

[0020] 110: Peeling layer

[0021] 210: First insulating layer

[0022] 210': First insulating layer

[0023] 212: First through hole

[0024] 220: Second insulating layer

[0025] 220': Second insulating layer

[0026] 222: Second through hole

[0027] 230: Light-shielding layer

[0028] 230': Light-shielding material layer

[0029] 232: Third through hole

[0030] 300, 300A: Circuit Structure

[0031] 300': Circuit board

[0032] 300s, 400s: Side view

[0033] 300t, 400t: Top surface

[0034] 310: First conductive layer

[0035] 320: Second conductive layer

[0036] 330: Conductive connector

[0037] 400: Light Emitting Diode

[0038] 500: Encapsulation layer

[0039] 500': Encapsulation material

[0040] 600: Connection terminal

[0041] 700: Supporting membrane

[0042] 800: Substrate

[0043] 910: Insulation structure

[0044] 920: Active Component

[0045] 930: Connecting electrodes

[0046] CL: Cutting track

[0047] PB: Probe

[0048] PL: Protective layer

[0049] T1, T2, T3: Thickness

[0050] W1, W2: Width Detailed Implementation

[0051] Figure 1A This is a top view schematic diagram of a light-emitting diode package structure according to an embodiment of the present invention. Figure 1B yes Figure 1A A bottom view of the LED package structure. Figure 1C It is along Figure 1A A schematic cross-sectional view of line I-I'.

[0052] Please refer to Figures 1A to 1C The light-emitting diode package structure 10 includes a circuit structure 300, multiple light-emitting diodes 400, and a package layer 500. For ease of explanation, Figure 1A The encapsulation layer 500 is shown in perspective.

[0053] The circuit structure 300 includes a first insulating layer 210, a second insulating layer 220, a light-shielding layer 230, a first conductive layer 310, and a second conductive layer 320. For ease of explanation, Figure 1A The light-shielding layer 230 is omitted from the diagram.

[0054] The first insulating layer 210 has a plurality of first through holes 212. The position and number of the first through holes 212 can be adjusted according to actual needs.

[0055] The first conductive layer 310 is located on the first insulating layer 210 and fills the first through-holes 212 of the first insulating layer 210. The first conductive layer 310 includes multiple portions that are separated from each other, and the aforementioned multiple portions are respectively filled into the multiple first through-holes 212 of the first insulating layer 210. For example, in this embodiment, the first insulating layer 210 includes four first through-holes 212, and the first conductive layer 310 includes four separate portions that are respectively filled into the aforementioned first through-holes 212. In this embodiment, the bottom surface of the first conductive layer 310 that fills the first through-holes 212 is aligned with the bottom surface of the first insulating layer 210.

[0056] The second insulating layer 220 is located on the first insulating layer 210 and has a plurality of second through holes 222. The position and number of the second through holes 222 can be adjusted according to actual needs. In this embodiment, the second through holes 222 overlap with the first through holes 212, but the present invention is not limited thereto. In other embodiments, the second through holes 222 do not overlap with the first through holes 212.

[0057] The second conductive layer 320 is located on the second insulating layer 220 and fills the second through-holes 222 of the second insulating layer 220. The second conductive layer 320 includes a plurality of mutually separated portions, and the aforementioned plurality of portions respectively fill the plurality of second through-holes 222 of the second insulating layer 220. For example, in this embodiment, the second insulating layer 220 includes four second through-holes 222, and the second conductive layer 320 includes four mutually separated portions respectively filled into the aforementioned second through-holes 222. In this embodiment, the second conductive layer 320 filling the second through-holes 222 is electrically connected to the first conductive layer 310.

[0058] In some embodiments, the materials of the first insulating layer 210 and the second insulating layer 220 include polyimide (PI), silicon nitride (SiNx), silicon oxide (SiOx), or other insulating materials.

[0059] In some embodiments, the materials of the first conductive layer 310 and the second conductive layer 320 include metals, metal oxides, metal nitrides, or other suitable conductive materials.

[0060] A light-emitting diode (LED) 400 is disposed on and electrically connected to the circuit structure 300. In this embodiment, the LED 400 is electrically connected to the second conductive layer 320 via a conductive connector 330, and electrically connected to the first conductive layer 310 via the second conductive layer 320. In this embodiment, the LED 400 is bonded to the circuit structure 300 via the conductive connector 330 using a flip-chip method, but the invention is not limited thereto. In other embodiments, the LED is a vertical LED, and after the lower electrode of the light-emitting element is bonded to the circuit structure 300, additional wires are formed to electrically connect the upper electrode of the light-emitting element to the circuit structure 300.

[0061] In some embodiments, the conductive connector 330 includes a metal (e.g., nickel, gold, bismuth, or an alloy of the aforementioned metals or a stacked layer of the aforementioned metals), solder, conductive adhesive, or other suitable conductive material.

[0062] In some embodiments, the multiple light-emitting diodes 400 in a single light-emitting diode package structure 10 may include multiple light-emitting diodes of different colors. Since the single light-emitting diode package structure 10 includes multiple light-emitting diodes 400, transferring one light-emitting diode package structure 10 is equivalent to transferring multiple light-emitting diodes 400 simultaneously, thereby reducing the difficulty of transferring the light-emitting diodes 400.

[0063] The light-shielding layer 230 is located on the second insulating layer 220 and surrounds multiple contacts (i.e., electrodes and / or conductive connectors 330 of the light-emitting diode 400) between the light-emitting diode 400 and the circuit structure 300, thereby protecting the multiple contacts between the light-emitting diode 400 and the circuit structure 300. In addition, the light-shielding layer 230 can improve the problem of light interference between different light-emitting diodes 400.

[0064] The encapsulation layer 500 covers the top surface 400t and side surface 400s of the light-emitting diode 400, as well as the side surface 300s of the circuit structure 300. In this embodiment, the encapsulation layer 500 covers a portion of the top surface 300t of the circuit structure 300. In this embodiment, the encapsulation layer 500 covers the first insulating layer 210, the second insulating layer 220, the light-shielding layer 230, the first conductive layer 310, the second conductive layer 320, and the light-emitting diode 400. The encapsulation layer 500 contacts the side surface of the first insulating layer 210, the side surface of the second insulating layer 220, and the side surface of the light-shielding layer 230.

[0065] In some embodiments, the encapsulation layer 500 is made of silicone resin, epoxy resin, or other insulating materials. Silicone resins include, for example, polydimethylsiloxane (PDMS) or other silicone resins. Epoxy resins include, for example, diglycidyl ether of bisphenol A (DGEBA) epoxy resin or other epoxy resins.

[0066] In some embodiments, the materials of the first insulating layer 210 and the second insulating layer 220 are different from the material of the encapsulation layer 500. For example, the first insulating layer 210 and the second insulating layer 220 contain a high-temperature resistant and yellowish material, while the encapsulation layer 500 contains a material with high transmittance, allowing the light emitted by the light-emitting diode 400 to pass through the encapsulation layer 500 more easily. In some embodiments, the transmittance of the encapsulation layer 500 is greater than the transmittance of the first insulating layer 210, the second insulating layer 220, and the light-shielding layer 230.

[0067] In this embodiment, the thickness T1 of the encapsulation layer 500 is greater than the sum of the thickness T2 of the circuit structure 300 and the thickness T3 of the light-emitting diode 400. The encapsulation layer 500 extends continuously from the top surface of the light-emitting diode encapsulation structure 10 to the bottom surface of the light-emitting diode encapsulation structure 10, and the encapsulation layer 500 covers the side surface 300s of the circuit structure 300. Therefore, during the cutting process, only the position of the encapsulation layer 500 can be cut, reducing the probability of damage to the circuit structure 300 during the cutting process.

[0068] Figures 2A to 2Q This is a cross-sectional schematic diagram of a method for manufacturing a light-emitting device according to an embodiment of the present invention. It must be noted that... Figures 2A to 2O The embodiments follow Figures 1A to 1C The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0069] Please refer to Figures 2A to 2H The carrier plate 100 provides multiple mutually separate circuit structures 300 and multiple light-emitting diodes 400 located on the circuit structures 300. Please refer to the following first. Figure 2A A carrier plate 100 is provided, and a release layer 110 is formed on the carrier plate 100.

[0070] Please refer to Figure 2B Multiple first insulating layers 210, separated from each other, are formed on the carrier plate 100. Each first insulating layer 210 includes multiple first through holes 212. Figure 2BOnly one of the first through-holes 212 of the first insulating layer 210 is shown. In this embodiment, the first insulating layer 210 is formed on the release layer 110. Figure 2B The illustration shows the formation of two first insulating layers 210, but the invention is not limited thereto. The number of first insulating layers 210 can be adjusted according to actual needs.

[0071] Please refer to Figure 2C Multiple first conductive layers 310 are formed on the first insulating layer 210. Each first conductive layer 310 is formed on a corresponding first insulating layer 210. The first conductive layer 310 fills a corresponding first through-hole 212. In some embodiments, each first conductive layer 310 includes multiple mutually separated portions, each of which fills a corresponding first through-hole 212.

[0072] Please refer to Figure 2D Multiple second insulating layers 220, separated from each other, are formed on the first insulating layer 210. Each second insulating layer 220 is formed on a corresponding first insulating layer 210. Each second insulating layer 220 includes multiple second through-holes 222. Figure 2D Only one of the second through-holes 222 of the second insulating layer 220 is shown.

[0073] In this embodiment, the side surface of the second insulating layer 220 is aligned with the side surface of the first insulating layer 210, but the invention is not limited thereto. In other embodiments, the side surface of the second insulating layer 220 is recessed within the side surface of the first insulating layer 210. In other embodiments, the second insulating layer 220 extends outward and covers the side surface of the first insulating layer 210.

[0074] Please refer to Figure 2E Multiple second conductive layers 320 are formed on the second insulating layer 220. Each second conductive layer 320 is formed on a corresponding second insulating layer 220. The second conductive layer 320 fills a corresponding second via 222. In some embodiments, each second conductive layer 320 includes multiple mutually separated portions, each of which fills a corresponding second via 222.

[0075] Please refer to Figure 2F Multiple light-shielding layers 230, separated from each other, are formed on the second insulating layer 220. Each light-shielding layer 230 is formed on a corresponding second insulating layer 220. Each light-shielding layer 230 has multiple third through-holes 232. Figure 2FOnly one of the third vias 232 of the light-shielding layer 230 is shown. The third via 232 exposes at least a portion of the second conductive layer 320. In this embodiment, the third via 232 has a structure that is narrower at the top and wider at the bottom, but the invention is not limited thereto. In other embodiments, the third via 232 has a structure that is wider at the top and narrower at the bottom, or the third via 232 has vertical sidewalls.

[0076] In this embodiment, the side surface of the light-shielding layer 230 is aligned with the side surface of the second insulating layer 220, but the invention is not limited thereto. In other embodiments, the side surface of the light-shielding layer 230 is recessed within the side surface of the second insulating layer 220. In other embodiments, the light-shielding layer 230 extends outward and covers the side surface of the second insulating layer 220.

[0077] Please refer to Figure 2G Multiple conductive connectors 330 are formed on the light-shielding layer 230. Each conductive connector 330 is filled into the corresponding third through hole 232 and electrically connected to the second conductive layer 320.

[0078] At this point, multiple separate circuit structures 300 have been formed on the carrier board 100.

[0079] Please refer to Figure 2H Multiple light-emitting diodes 400 are placed on the circuit structure 300. The light-emitting diodes 400 are bonded to the second conductive layer 320 via electrical connectors 330.

[0080] Please refer to Figure 2I An encapsulation material 500' is formed on the light-emitting diode 400 and the circuit structure 300. The encapsulation material 500' covers the top surface 400t and side surface 400s of the light-emitting diode 400 and the top surface 300t and side surface 300s of the circuit structure 300. In this embodiment, the encapsulation material 500' contacts the side surface of the first insulating layer 210, the side surface of the second insulating layer 220, and the side surface of the light-shielding layer 230.

[0081] In some embodiments, the encapsulation material 500' also fills the gap (not shown) between the light-emitting diode 400 and the circuit structure 300, thereby further securing the light-emitting diode 400.

[0082] Please refer to Figure 2J Remove carrier board 100.

[0083] Please refer to Figure 2K Remove the release layer 110. In some embodiments, the method for removing the release layer 110 includes dry etching, wet etching, or other suitable processes.

[0084] Please refer to Figure 2LA connection terminal 600 is formed on the side of the circuit structure 300 opposite to the light-emitting diode 400. In this embodiment, the connection terminal 600 is formed below the first through-hole 212 and is connected to the first conductive layer 310. In some embodiments, the connection terminal 600 includes a metal (e.g., nickel, gold, bismuth, or an alloy of the aforementioned metals or a stacked layer of the aforementioned metals), solder, conductive adhesive, or other suitable conductive material.

[0085] Please refer to Figure 2M A support film 700 is attached to the encapsulation material 500', wherein the connection terminal 600 is located on the side of the circuit structure 300 away from the support film 700. In this embodiment, the connection terminal 600 is formed on the circuit structure 300 first, and then the support film 700 is attached to the encapsulation material 500', but the invention is not limited thereto. In other embodiments, the support film 700 is attached to the encapsulation material 500' first, and then the connection terminal 600 is formed on the circuit structure 300. In some embodiments, a release layer (not shown) is included between the support film 700 and the encapsulation material 500', but the invention is not limited thereto.

[0086] Please refer to Figure 2N The encapsulation material 500' is cut along multiple cleaving lines CL to form multiple mutually separated encapsulation layers 500, and to form multiple light-emitting diode (LED) encapsulation structures 10. Each LED encapsulation structure 10 includes a corresponding circuit structure 300, multiple corresponding LEDs 400, and a corresponding encapsulation layer 500. The cleaving lines CL are located between the circuit structures 300. The cleaving lines CL do not overlap with the circuit structures 300. The width W1 of the cleaving lines CL is less than the distance W2 between the circuit structures 300.

[0087] In this embodiment, since the cutting process only cuts the packaging material 500', the circuit structure 300 can be avoided from being damaged during the cutting process.

[0088] Please refer to Figure 2O The probe PB is used to contact the circuit structure 300 to test the light-emitting diode 400 on the circuit structure 300. In this embodiment, since the connection terminal 600 is located on the side of the circuit structure 300 away from the support film 700, the support film 700 does not need to be removed before the probe PB can contact the connection terminal 600.

[0089] Please refer to Figure 2P At least one of the light-emitting diode package structures 10 is removed from the support film 700 and placed on the pixel array substrate 20. In this embodiment, the pixel array substrate 20 includes a substrate 800, an insulating structure 910, an active element 920, and a connecting electrode 930.

[0090] The substrate 800 can be made of glass, quartz, organic polymer, or opaque / reflective materials (e.g., conductive materials, metals, wafers, ceramics, or other suitable materials) or other suitable materials. If a conductive material or metal is used, an insulating layer (not shown) is applied to the substrate 800 to prevent short circuits.

[0091] The insulating structure 910 can be a single-layer or multi-layer structure. The active element 920 and the connecting electrode 930 are disposed within the insulating structure 910. The active element 920 is, for example, a thin-film transistor of any form. The connecting electrode 930 is electrically connected to the active element 920.

[0092] The light-emitting diode package structure 10 is connected to the connection electrode 930 of the pixel array substrate 20 via the connection terminal 600.

[0093] Please refer to Figure 2Q A protective layer PL is formed on the pixel array substrate 20, and the protective layer PL covers the encapsulation layer 500 of the light-emitting diode package structure 10. At this point, the light-emitting device 1 is substantially complete. In this embodiment, the protective layer PL covers the top surface of the light-emitting diode package structure 10 and fills the gaps between adjacent light-emitting diode package structures 10. In some embodiments, the protective layer PL also fills the gap between the light-emitting diode package structure 10 and the pixel array substrate 20.

[0094] Figures 3A to 3B This is a cross-sectional schematic diagram of a method for manufacturing a light-emitting device according to an embodiment of the present invention. Please refer to... Figure 3A A circuit board 300' is formed on the carrier plate 100. In this embodiment, the circuit board 300' is formed on the release layer 110.

[0095] The circuit board 300' includes a first insulating material layer 210', a second insulating material layer 220', a light-shielding material layer 230', a plurality of first conductive layers 310, a plurality of second conductive layers 320, and a plurality of conductive connectors 330. The first insulating material layer 210' is formed over its entire surface on the release layer 110 and has a plurality of first through-holes 212. The first conductive layers 310 are formed on the first insulating material layer 210' and fill the first through-holes 212. The second insulating material layer 220' is formed over its entire surface on the first insulating material layer 210' and the first conductive layer 310, and has a plurality of second through-holes 222. The second conductive layers 320 are formed on the second insulating material layer 220' and fill the second through-holes 222. The light-shielding material layer 230' is formed over its entire surface on the second insulating material layer 220' and the second conductive layer 320, and has a plurality of third through-holes 232. The conductive connectors 330 are formed in the third through-holes 232.

[0096] A light-emitting diode 400 is placed on a circuit board 300'. The light-emitting diode 400 is bonded to a conductive connector 330.

[0097] Please refer to Figure 3B The circuit substrate 300' is patterned to form mutually separated circuit structures 300. In this embodiment, the method of patterning the circuit substrate 300' includes dry etching, wet etching, or other suitable processes. In this embodiment, the light-emitting diode 400 is placed on the circuit substrate 300' first, and then the circuit substrate 300' is patterned, but the invention is not limited thereto. In other embodiments, the light-emitting diode 400 is placed on the circuit structure 300 after the circuit substrate 300' is patterned.

[0098] After providing the mutually separate circuit structure 300 and a plurality of light-emitting diodes 400 located on the circuit structure 300 on the carrier board 100, the following is performed: Figures 2I to 2Q The process described above is used to obtain the light-emitting device 1.

[0099] Figure 4A This is a top view schematic diagram of a light-emitting diode package structure according to an embodiment of the present invention. Figure 4B yes Figure 4A A bottom view of the LED package structure. Figure 4C It is along Figure 4A A schematic cross-sectional view of line I-I'. It must be noted here that... Figures 4A to 4C The embodiments follow Figures 1A to 1C The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and they will not be repeated here. For ease of explanation, Figure 4A The encapsulation layer 500 is shown in perspective.

[0100] Figures 4A to 4C The LED package structure 10A and Figures 1A to 1C The main difference of the light-emitting diode package structure 10 is that the circuit structure 300A of the light-emitting diode package structure 10A does not include the second insulating layer and the second conductive layer.

[0101] Please refer to Figures 4A to 4C The circuit structure 300A includes a first insulating layer 210, a light-shielding layer 230, and a first conductive layer 310. For ease of explanation, Figure 4A The light-shielding layer 230 is omitted from the diagram.

[0102] The first insulating layer 210 has a plurality of first through holes 212. The position and number of the first through holes 212 can be adjusted according to actual needs.

[0103] The first conductive layer 310 is located on the first insulating layer 210 and fills the first through-holes 212 of the first insulating layer 210. The first conductive layer 310 includes multiple portions that are separated from each other, and the aforementioned multiple portions are respectively filled into the multiple first through-holes 212 of the first insulating layer 210. For example, in this embodiment, the first insulating layer 210 includes four first through-holes 212, and the first conductive layer 310 includes four separate portions that are respectively filled into the aforementioned first through-holes 212. In this embodiment, the bottom surface of the first conductive layer 310 that fills the first through-holes 212 is aligned with the bottom surface of the first insulating layer 210.

[0104] A light-emitting diode (LED) 400 is disposed on and electrically connected to circuit structure 300A. In this embodiment, the LED 400 is electrically connected to the first conductive layer 310 via conductive connector 330. In this embodiment, the LED 400 is bonded to circuit structure 300A via conductive connector 330 in a flip-chip manner, but the present invention is not limited thereto. In other embodiments, the LED is a vertical LED, and after the lower electrode of the light-emitting element is bonded to circuit structure 300A, additional wires are formed to electrically connect the upper electrode of the light-emitting element to circuit structure 300A.

[0105] In some embodiments, the multiple light-emitting diodes 400 in a single light-emitting diode package structure 10A may include light-emitting diodes of different colors. Since a single light-emitting diode package structure 10A includes multiple light-emitting diodes 400, transferring one light-emitting diode package structure 10A is equivalent to transferring multiple light-emitting diodes 400 simultaneously, thereby reducing the difficulty of transferring the light-emitting diodes 400.

[0106] The light-shielding layer 230 is located on the first insulating layer 210 and surrounds multiple contacts between the light-emitting diode 400 and the circuit structure 300A (i.e., the electrodes of the light-emitting diode 400 and / or the conductive connectors 330), thereby protecting the multiple contacts between the light-emitting diode 400 and the circuit structure 300A.

[0107] The encapsulation layer 500 covers the top surface 400t and side surface 400s of the light-emitting diode 400, as well as the side surface 300s of the circuit structure 300A. In this embodiment, the encapsulation layer 500 covers a portion of the top surface 300t of the circuit structure 300A. In this embodiment, the encapsulation layer 500 covers the first insulating layer 210, the light-shielding layer 230, the first conductive layer 310, and the light-emitting diode 400. The encapsulation layer 500 contacts the side surface of the first insulating layer 210 and the side surface of the light-shielding layer 230.

[0108] In this embodiment, the thickness T1 of the encapsulation layer 500 is greater than the sum of the thickness T2 of the circuit structure 300A and the thickness T3 of the light-emitting diode 400. The encapsulation layer 500 extends continuously from the top surface of the light-emitting diode encapsulation structure 10A to the bottom surface of the light-emitting diode encapsulation structure 10A, and the encapsulation layer 500 covers the side surface 300s of the circuit structure 300A. Therefore, during the dicing process, only the position of the encapsulation layer 500 can be diced, reducing the probability of damage to the circuit structure 300A during the dicing process.

Claims

1. A light-emitting device, comprising: A light-emitting diode package structure, including: A circuit structure, including: A first insulating layer having multiple first through holes; A first conductive layer is filled into the first vias; and A light-shielding layer is located above the first insulating layer and has multiple third through holes; Multiple conductive connectors are located in these third through holes; Multiple light-emitting diodes are disposed on this circuit structure; and An encapsulation layer covers the top and side surfaces of the light-emitting diodes and the side surfaces of the circuit structure, wherein the encapsulation layer contacts the side surfaces of the first insulating layer and the side surfaces of the light-shielding layer; and A pixel array substrate, wherein the circuit structure is bonded to the pixel array substrate, and wherein the light-emitting diodes are electrically connected to the circuit structure via the conductive connectors, and further electrically connected to the pixel array substrate via the circuit structure.

2. The light-emitting device as described in claim 1, further comprising: A protective layer is located on the pixel array substrate and covers the encapsulation layer.

3. The light-emitting device as claimed in claim 1, wherein the circuit structure further includes: A second insulating layer is located between the first insulating layer and the light-shielding layer, and has a plurality of second through holes; as well as A second conductive layer is located on the second insulating layer and fills the second through holes. The light-emitting diodes are electrically connected to the second conductive layer through the conductive connectors and further electrically connected to the first conductive layer through the second conductive layer.

4. The light-emitting device as claimed in claim 3, wherein the transmittance of the encapsulation layer is greater than the transmittance of the first insulating layer and the transmittance of the second insulating layer.

5. The light-emitting device of claim 3, wherein the light-shielding layer surrounds the conductive connections between the light-emitting diodes and the circuit structure.

6. The light-emitting device of claim 3, wherein the encapsulation layer covers and contacts the side surface of the first insulating layer, the side surface of the second insulating layer, and the side surface of the light-shielding layer.

7. The light-emitting device of claim 1, wherein the thickness of the encapsulation layer is greater than the thickness of the circuit structure plus the thickness of the light-emitting diodes.

8. A method for manufacturing a light-emitting device, comprising: A plurality of mutually separate circuit structures and a plurality of light-emitting diodes located on the circuit structures are provided on a carrier board, wherein each circuit structure includes: A first insulating layer having multiple first through holes; A first conductive layer is filled into the first vias; and A light-shielding layer is located above the first insulating layer and has multiple third through holes; multiple conductive connectors are located in these third through holes; An encapsulation material is formed on the light-emitting diodes and the circuit structures, wherein the encapsulation material covers the top and side surfaces of the light-emitting diodes and the side surfaces of the circuit structures; and The encapsulation material is cut along multiple dicing lines to form multiple mutually separated encapsulation layers, thereby forming multiple light-emitting diode (LED) encapsulation structures. Each LED encapsulation structure includes a corresponding circuit structure, multiple corresponding LEDs, and a corresponding encapsulation layer, wherein the dicing lines are located between the circuit structures. These cuts are located between the packaging materials on the sides of these circuit structures. At least one of the light-emitting diode (LED) package structures is placed on a pixel array substrate, wherein the circuit structure of the at least one of the LED package structures is bonded to the pixel array substrate, and wherein the LEDs of the at least one of the LED package structures are electrically connected to the corresponding circuit structure through corresponding conductive connectors, and further electrically connected to the pixel array substrate through the corresponding circuit structure.

9. The method for manufacturing the light-emitting device as described in claim 8, further comprising: A protective layer is formed on the pixel array substrate and covers the corresponding encapsulation layer of at least one of the light-emitting diode encapsulation structures.

10. The method for manufacturing the light-emitting device as described in claim 8, further comprising: A support film is attached to the encapsulation material; as well as The circuit structures are electrically connected with a probe to test the light-emitting diodes.

11. The method of manufacturing a light-emitting device as claimed in claim 8, wherein the width of the cut channels is smaller than the distance between the circuit structures.

12. The method of manufacturing a light-emitting device as claimed in claim 8, wherein the cut lines do not overlap with the circuit structures.

13. The method of manufacturing a light-emitting device as claimed in claim 8, wherein the method of providing the mutually separated circuit structures and the light-emitting diodes located on the circuit structures on the carrier plate comprises: A circuit board is formed on the carrier plate; The circuit board is patterned to form mutually separated circuit structures; as well as The light-emitting diodes are placed on the circuit board before the circuit board is patterned, or the light-emitting diodes are placed on the circuit structure after the circuit board is patterned.

14. The method of manufacturing a light-emitting device as claimed in claim 8, wherein the method of providing the mutually separable circuit structures on the carrier plate comprises: Multiple first insulating layers, which are separated from each other, are formed on the carrier plate, wherein each first insulating layer has multiple first through holes; as well as Multiple first conductive layers are formed on the first insulating layers, wherein each of the first conductive layers fills multiple corresponding first vias.

15. The method of manufacturing a light-emitting device as claimed in claim 14, wherein the encapsulation material contacts the sides of the first insulating layers.

16. The method of manufacturing a light-emitting device as claimed in claim 14, wherein the method of providing the mutually separated circuit structures on the carrier further comprises: Multiple second insulating layers are formed on the first insulating layers, each of which is separated from the others, and each second insulating layer has multiple second through holes; as well as Multiple second conductive layers are formed on the second insulating layers, wherein each of the second conductive layers fills multiple corresponding second vias.

17. The method of manufacturing a light-emitting device as claimed in claim 16, wherein the encapsulation material contacts the sides of the second insulating layers.

Images